CN201156541Y - Novel lead wire of electrode of semiconductor diode - Google Patents
Novel lead wire of electrode of semiconductor diode Download PDFInfo
- Publication number
- CN201156541Y CN201156541Y CNU2008200322518U CN200820032251U CN201156541Y CN 201156541 Y CN201156541 Y CN 201156541Y CN U2008200322518 U CNU2008200322518 U CN U2008200322518U CN 200820032251 U CN200820032251 U CN 200820032251U CN 201156541 Y CN201156541 Y CN 201156541Y
- Authority
- CN
- China
- Prior art keywords
- lead
- wire
- diode
- utility
- pit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
The utility model discloses a novel electrode lead for semiconductor diode comprising a lead head, which is characterized in that the center of the welding end of the lead head is equipped with a concave pit. Compared with prior art, the utility model can enable the position of the welding area of the diode chip to be fixed, decrease and even eliminate the welding displacement of the chip, and promote the rate of good product of the diode and the reliability of electrical connection.
Description
Technical field
The utility model relates to semiconductor diode, particularly a kind of new pin configuration of diode electrode.
Background technology
As everyone knows, diode is a kind of the most frequently used semi-conductor electronic device, uses very extensive.Figure 5 shows that a kind of common diode structure; mainly form by a tube core (chip that contains PN junction) 2, two weld tabs 3 of 4, two lead-in wires and epoxy protective layer 5; wherein the tow sides of tube core 4 are respectively by end face 7 welding of sheet weld tabs 3 with lead riser 6; the side of tube core 4 scribbles protection glue 8, and lead riser 6, weld tabs 3 and tube core 4 are protected by epoxy protective layer 5 wrapping and encapsulating.Diode its packaging technology after die making finishes has following operation: the first step, load operation, and soon lead-in wire, tube core and weld tabs are seated on the graphite boat and (generally adopt the graphite boat of 1200 holes/boat); Second step, welding sequence, integral body is put into and adds thermal weld in the high temperature furnace after being about to load, and heating-up temperature generally is not higher than 360 degree; The 3rd step, pickling process; In the 4th step, coating process is promptly coated protection glue in the side of tube core; In the 5th step, annotate the epoxy encapsulation moulding.
In the prior art, the contact conductor that is used for diode divides by its profile generally following four kinds:
1, " T " font lead-in wire is seen shown in Figure 1;
2, " do " the font lead-in wire, see shown in Figure 2;
3, " sub warhead (single head) " lead-in wire is seen shown in Figure 3;
4, " sub warhead (double end) " lead-in wire is seen shown in Figure 4.
Because the welding end surface 7 of existing lead riser 6 is planar design, in the past after first step filling operation, because there is tolerance in the filling hole precision on the graphite boat, vibration in the transportation is shifted weld tabs 3 relative welding end surface 7 easily, finally cause welding the diode weld tabs off-centre after the encapsulation, cause the yields of diode to descend, it is unreliable to contact, problems such as the unstable and easy inefficacy of electrical property.
Therefore, how to solve these problems that exist in the prior art, just become the problem of the utility model research.
Summary of the invention
The utility model provides a kind of semiconductor diode electrode newly to go between, welding off-centring problem in its purpose solution diode package process between tube core and the lead-in wire, to improve the yields and the electrical connection properties of diode, guarantee welding reliability and stability in the diode package.
For achieving the above object, the technical solution adopted in the utility model is: a kind of semiconductor diode electrode newly goes between, and comprises a lead riser, and wherein: the welding end surface center of described lead riser is provided with a pit.
Related content in the technique scheme is explained as follows:
1, in the such scheme, the cross sectional shape of described pit on lead-in wire is axial is semicircle.
2, in the such scheme, the cross sectional shape of described pit on lead-in wire is axial is del.
3, in the such scheme, the cross sectional shape of described pit on lead-in wire is axial is for trapezoidal.
4, in the such scheme, pit is for convenience of locating with tin ball that melts front and back or soldered ball and engaging in the design of the axial upper section shape of lead-in wire.
The utility model operation principle is: adopt on the lead riser welding end surface of existing diode lead concave sections ccontaining tin ball or soldered ball as solder flux are set, to reach fixedly position, diode chip for backlight unit weld zone, reduce even stop to weld off normal, improve the yields of diode and the purpose of reliability of electrical connection thereof.
Because the technique scheme utilization, the utility model compared with prior art has following advantage:
1, the position, weld zone between chip and the lead riser welding end surface can be fixed owing to pit is set;
2, can reduce even stop welding off normal between chip and the lead riser welding end surface;
3, improved the diode yields;
4, improved the reliability that is electrically connected.
Description of drawings
Accompanying drawing 1 is existing " T " font lead-in wire schematic diagram;
Accompanying drawing 2 is existing " doing " font lead-in wire schematic diagram;
Accompanying drawing 3 is existing " sub warhead (single head) " shape lead-in wire schematic diagram;
Accompanying drawing 4 is existing " sub warhead (double end) " shape lead-in wire schematic diagram;
Accompanying drawing 5 is existing " T " font lead-in wire diode structure schematic diagram;
Accompanying drawing 7 is the utility model " T " font lead-in wire schematic diagram;
Accompanying drawing 8 is that the utility model " is done " font lead-in wire schematic diagram;
Accompanying drawing 9 is the utility model " sub warhead (single head) " shape lead-in wire schematic diagram;
Accompanying drawing 10 is the utility model " sub warhead (double end) " shape lead-in wire schematic diagram;
Accompanying drawing 11 is the utility model " T " font second embodiment schematic diagram that goes between;
Accompanying drawing 12 is the utility model " T " font the 3rd embodiment schematic diagram that goes between.
In the above accompanying drawing: 1, diode; 2, lead-in wire; 3, weld tabs; 4, tube core; 5, epoxy protective layer; 6, lead riser; 7, welding end surface; 8, protection glue; 11, diode; 12, lead-in wire; 13, tin ball; 14, tube core; 15, epoxy protective layer; 16, lead riser; 17, welding end surface; 18, protection glue; 19, pit.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described:
Embodiment one:
As shown in Figure 7, a kind of semiconductor diode electrode " T " font lead-in wire has one " T " font lead riser 16 at lead-in wire 12 front ends, and welding end surface 17 centers of lead riser 16 are provided with a pit 19, and the cross sectional shape of this pit 19 on lead-in wire is axial is semicircle.
As shown in Figure 6; present embodiment diode 11 mainly is made up of a tube core (chip that contains PN junction) 14, two lead-in wires, 12, two tin balls 13 (being solder flux) and epoxy protective layer 15; wherein the tow sides of tube core 14 are respectively by welding end surface 17 welding of tin ball 13 with lead riser 16; the side of tube core 14 scribbles protection glue 18, and lead riser 16, tin ball 13 and tube core 14 are protected by epoxy protective layer 15 wrapping and encapsulating.
Embodiment two:
As shown in Figure 8, a kind of semiconductor diode electrode " is done " the font lead-in wire, at lead-in wire 12 front ends one T is arranged " font lead riser 16, welding end surface 17 centers of lead riser 16 are provided with a pit 19, and the cross sectional shape of this pit 19 on lead-in wire is axial is semicircle.It is that pin configuration is different that present embodiment is compared with embodiment one, and all other is identical.
Embodiment three:
As shown in Figure 9, a kind of semiconductor diode electrode " sub warhead (single head) " shape lead-in wire, at lead-in wire 12 front ends one T is arranged " font lead riser 16, welding end surface 17 centers of lead riser 16 are provided with a pit 19, and the cross sectional shape of this pit 19 on lead-in wire is axial is semicircle.It is that pin configuration is different that present embodiment is compared with embodiment one, and all other is identical.
Embodiment four:
As shown in figure 10, a kind of semiconductor diode electrode " sub warhead (double end) " shape lead-in wire, at lead-in wire 12 front ends one T is arranged " font lead riser 16, welding end surface 17 centers of lead riser 16 are provided with a pit 19, and the cross sectional shape of this pit 19 on lead-in wire is axial is semicircle.It is that pin configuration is different that present embodiment is compared with embodiment one, and all other is identical.
Embodiment five:
As shown in figure 11, a kind of semiconductor diode electrode " T " font lead-in wire has a T at lead-in wire 12 front ends " font lead riser 16, welding end surface 17 centers of lead riser 16 are provided with a pit 19, and the cross sectional shape of this pit 19 on lead-in wire is axial is del.It is that pin configuration is different that present embodiment is compared with embodiment one, and all other is identical.
Embodiment six:
As shown in figure 12, a kind of semiconductor diode electrode " T " font lead-in wire has a T at lead-in wire 12 front ends " font lead riser 16, welding end surface 17 centers of lead riser 16 are provided with a pit 19, and the cross sectional shape of this pit 19 on lead-in wire is axial is for trapezoidal.It is that pin configuration is different that present embodiment is compared with embodiment one, and all other is identical.
The utility model compared with prior art can make the fixed-site of diode chip for backlight unit weld zone, can reduce even stop the chips welding off normal, and has improved the yields of diode and the reliability of electrical connection thereof.
The foregoing description only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of being done according to the utility model spirit change or modify, and all should be encompassed within the protection range of the present utility model.
Claims (4)
1, a kind of semiconductor diode electrode newly goes between, and comprises a lead riser (16), it is characterized in that: welding end surface (17) center of described lead riser (16) is provided with a pit (19).
2, semiconductor diode electrode according to claim 1 newly goes between, and it is characterized in that: the cross sectional shape of described pit (19) on lead-in wire is axial is for semicircle.
3, semiconductor diode electrode according to claim 1 newly goes between, and it is characterized in that: the cross sectional shape of described pit (19) on lead-in wire is axial is del.
4, semiconductor diode electrode according to claim 1 newly goes between, and it is characterized in that: the cross sectional shape of described pit (19) on lead-in wire is axial is for trapezoidal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200322518U CN201156541Y (en) | 2008-02-20 | 2008-02-20 | Novel lead wire of electrode of semiconductor diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200322518U CN201156541Y (en) | 2008-02-20 | 2008-02-20 | Novel lead wire of electrode of semiconductor diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201156541Y true CN201156541Y (en) | 2008-11-26 |
Family
ID=40104318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200322518U Expired - Lifetime CN201156541Y (en) | 2008-02-20 | 2008-02-20 | Novel lead wire of electrode of semiconductor diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201156541Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034705A (en) * | 2010-10-18 | 2011-04-27 | 重庆平伟实业股份有限公司 | Processing technology for reducing large-current diode stress |
| CN102856393A (en) * | 2012-10-08 | 2013-01-02 | 如皋市易达电子有限责任公司 | Chip-diode structure |
| CN110190001A (en) * | 2019-06-05 | 2019-08-30 | 扬州扬杰电子科技股份有限公司 | A kind of processing technology of axial diode |
| CN110967046A (en) * | 2018-09-28 | 2020-04-07 | 横河电机株式会社 | Sensor unit, transmitter provided with sensor unit, method for manufacturing sensor unit, and method for manufacturing transmitter |
-
2008
- 2008-02-20 CN CNU2008200322518U patent/CN201156541Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034705A (en) * | 2010-10-18 | 2011-04-27 | 重庆平伟实业股份有限公司 | Processing technology for reducing large-current diode stress |
| CN102034705B (en) * | 2010-10-18 | 2012-12-12 | 重庆平伟实业股份有限公司 | Processing technology for reducing large-current diode stress |
| CN102856393A (en) * | 2012-10-08 | 2013-01-02 | 如皋市易达电子有限责任公司 | Chip-diode structure |
| CN110967046A (en) * | 2018-09-28 | 2020-04-07 | 横河电机株式会社 | Sensor unit, transmitter provided with sensor unit, method for manufacturing sensor unit, and method for manufacturing transmitter |
| CN110190001A (en) * | 2019-06-05 | 2019-08-30 | 扬州扬杰电子科技股份有限公司 | A kind of processing technology of axial diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201156541Y (en) | Novel lead wire of electrode of semiconductor diode | |
| CN104795380A (en) | Three-dimensional packaging structure | |
| CN203536467U (en) | LED device having transition substrate | |
| CN101882606B (en) | Heat-dissipation semiconductor encapsulation structure and manufacturing method thereof | |
| CN202443963U (en) | Semiconductor substrate package structure | |
| CN201194226Y (en) | Highly reliable diode device applying lead wire pre-welding construction | |
| CN201956345U (en) | GPP (glass passivation pellet) high-voltage diode | |
| CN202394887U (en) | Semiconductor packaging structure with stacked chips | |
| CN212136443U (en) | Bidirectional patch transient voltage suppression diode | |
| CN203118995U (en) | Anti-pore diode device | |
| CN202196774U (en) | Plastic packaged power diode with welded metal pad | |
| TW200845322A (en) | Package structure and manufacturing method thereof | |
| CN209199917U (en) | A kind of triode encapsulating structure with comprehensive heat sinking function | |
| CN206595245U (en) | A kind of multitower diode (led) module | |
| CN206789535U (en) | A kind of fan-out package structure of power electronic devices | |
| CN201732781U (en) | Lead frame | |
| CN201845754U (en) | Inverted chip packaging structure using carbon nano tube clusters as chip salient points | |
| CN206806330U (en) | A kind of integrated circuit applied to SOT23 semiconductor packages | |
| CN204464262U (en) | A kind of 3-D stacks encapsulating structure | |
| CN204481020U (en) | Metallic packaging big current MOS half-bridge module | |
| CN201893332U (en) | Glass passivation high-voltage semiconductor rectifier | |
| CN211455672U (en) | Semiconductor packaging structure | |
| CN214588813U (en) | Packaging structure of reverse-bending internal insulation product | |
| CN202178251U (en) | Copper wire chip packaging structure | |
| CN203118939U (en) | Square flat type power device capsule |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20081126 |
|
| CX01 | Expiry of patent term |