CN212136443U - Bidirectional patch transient voltage suppression diode - Google Patents
Bidirectional patch transient voltage suppression diode Download PDFInfo
- Publication number
- CN212136443U CN212136443U CN202021219248.4U CN202021219248U CN212136443U CN 212136443 U CN212136443 U CN 212136443U CN 202021219248 U CN202021219248 U CN 202021219248U CN 212136443 U CN212136443 U CN 212136443U
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- metal lead
- diode chip
- welding
- diode
- transient voltage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a bidirectional patch transient voltage suppression diode, wherein the respective welding ends of a first metal lead and a second metal lead are respectively connected with a first diode chip and a second diode chip through a first soldering lug layer, and the homopolar ends of the first diode chip and the second diode chip are electrically connected through a second soldering lug layer; the first welding sheet layer is positioned between the end face plate and the convex column of each of the first metal lead and the second metal lead and between the first diode chip and the second diode chip; the first metal lead is provided with a first bending part between the welding end and the pin end, the second metal lead is provided with a second bending part between the welding end and the pin end, and the pin end of each of the first metal lead and the second metal lead is parallel to the bottom of the epoxy packaging body and is lower than the bottom of the epoxy packaging body in the height direction. The utility model discloses two-way paster transient voltage restraines diode two-way paster transient voltage and restraines the diode and has effectively improved the reliability of device, when reducing the space that occupies, is favorable to welding and thermal diffusion.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a two-way paster transient voltage restraines diode.
Background
The transient voltage suppression diode is also called clamping diode, TVS for short, and is a high-performance circuit protection device commonly used internationally. When the two poles of the transient voltage suppressor are impacted by reverse transient high energy, it can change the high impedance between the two poles into low impedance at the speed of 10-12s, absorb the surge power up to several kilowatts, and make the clamping voltage between the two poles be at a preset value, so that it can effectively protect the precision components in the electronic circuit from being damaged by various surge pulses. In the application of high-frequency lines, the junction capacitance of the conventional transient voltage suppressor is usually only about several hundred pF, so that the high-frequency signal is often distorted even if the transient voltage suppressor is in a non-operating state.
Disclosure of Invention
The utility model aims at providing a two-way paster transient voltage restraines diode, this two-way paster transient voltage restraines diode has effectively improved the reliability of device, reduces the space that occupies simultaneously, is favorable to welding and thermal diffusion.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a bidirectional patch transient voltage suppressor diode comprising: the first diode chip, the second diode chip, the first metal lead and the second metal lead are respectively positioned in the epoxy packaging body, the pin ends of the first metal lead and the second metal lead respectively extend out of the bottom of the epoxy packaging body, the welding ends of the first metal lead and the second metal lead are respectively connected with the first diode chip and the second diode chip through the first welding sheet layer, and the homopolar ends of the first diode chip and the second diode chip are electrically connected through the second welding sheet layer;
the welding ends of the first metal lead and the second metal lead further comprise end face plates and a plurality of convex columns which are positioned on the surfaces of the end face plates at intervals, and the first welding sheet layer is positioned between the end face plates and the convex columns of the first metal lead and the second metal lead and between the first diode chip and the second diode chip;
the first metal lead is provided with a first bending part between the welding end and the pin end, a second bending part between the welding end and the pin end of the second metal lead, the pin end of each of the first metal lead and the second metal lead is parallel to the bottom of the epoxy packaging body and is lower than the bottom of the epoxy packaging body in the height direction, and the first bending part of the first metal lead and the second bending part of the second metal lead are provided with a through hole.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the area ratio of the respective areas of the first diode chip and the second diode chip to the respective areas of the first diode chip and the second diode chip is 10: 1 to 2.
2. In the above scheme, the through hole is located in the middle of the first bending portion or the second metal lead.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
1. the utility model discloses two-way paster transient voltage restraines diode, its positive pole of first diode chip is connected through second soldering lug layer electricity with the negative pole of second diode chip; the welding ends of the first metal lead and the second metal lead further comprise end face plates and a plurality of protruding columns which are arranged on the surfaces of the end face plates at intervals, the first welding sheet layer is arranged between the end face plates and the protruding columns of the first metal lead and the second metal lead and between the first diode chip and the second diode chip, the position deviation of the diode chip and the metal leads in the welding process is effectively improved, the insufficient welding is avoided, the reliability of the device is improved, and the service life of the chip is prolonged.
2. The utility model discloses two-way paster transient voltage restraines diode, a first portion of bending has between the welding end and the pin end of its first metal lead, the second portion of bending has between the welding end and the pin end of second metal lead, and first metal lead, the respective pin end of second metal lead are parallel and are less than epoxy encapsulation body bottom in the direction of height with epoxy encapsulation body bottom, and a through-hole has all been opened to the first portion of bending of this first metal lead and the second portion of bending of second metal lead, reduces the space that occupies simultaneously, is favorable to welding and thermal diffusion.
Drawings
Figure 1 is the utility model discloses two-way paster transient voltage restraines diode structure schematic diagram.
In the above drawings: 11. a first diode chip; 12. a second diode chip; 2. a first metal lead; 3. a second metal lead; 4. welding the end; 5. a pin end; 6. an epoxy package; 7. a first solder pad layer; 8. an end panel; 9. a convex column; 10. a second solder pad layer; 13. a first bending portion; 14. a second bending portion; 15. and a through hole.
Detailed Description
Example 1: a bidirectional patch transient voltage suppressor diode comprising: the LED package structure comprises a first diode chip 11, a second diode chip 12, a first metal lead 2 and a second metal lead 3, wherein the welding ends 4 of the first diode chip 11, the second diode chip 12, the first metal lead 2 and the second metal lead 3 are respectively positioned in an epoxy package body 6, the pin ends 5 of the first metal lead 2 and the second metal lead 3 respectively extend out from the bottom of the epoxy package body 6, the welding ends 4 of the first metal lead 2 and the second metal lead 3 are respectively connected with the first diode chip 11 and the second diode chip 12 through a first welding sheet layer 7, and the homopolar ends of the first diode chip 11 and the second diode chip 12 are electrically connected through a second welding sheet layer 10;
the welding end 4 of each of the first metal lead 2 and the second metal lead 3 further comprises an end plate 8 and a plurality of convex columns 9 which are positioned on the surface of the end plate 8 and distributed at intervals, and the first bonding pad layer 7 is positioned between the end plate 8 and the convex column 9 of each of the first metal lead 2 and the second metal lead 3 and the first diode chip 11 and the second diode chip 12;
have a first portion 13 of bending between the bonding terminal 4 and the pin end 5 of first metal lead 2, second portion 14 of bending has between the bonding terminal 4 and the pin end 5 of second metal lead 3, and first metal lead 2, the respective pin end 5 of second metal lead 3 are parallel and are less than 6 bottoms of epoxy encapsulation body in the direction of height with 6 bottoms of epoxy encapsulation body, and a through-hole 15 has all been opened to this first portion 13 of bending of first metal lead 2 and the second portion 14 of bending of second metal lead 3.
The area ratio 10 between the respective areas of the first diode chip 11 and the second diode chip 12 and the respective areas of the first diode chip 11 and the second diode chip 12: 1.4.
example 2: a bidirectional patch transient voltage suppressor diode comprising: the LED package structure comprises a first diode chip 11, a second diode chip 12, a first metal lead 2 and a second metal lead 3, wherein the welding ends 4 of the first diode chip 11, the second diode chip 12, the first metal lead 2 and the second metal lead 3 are respectively positioned in an epoxy package body 6, the pin ends 5 of the first metal lead 2 and the second metal lead 3 respectively extend out from the bottom of the epoxy package body 6, the welding ends 4 of the first metal lead 2 and the second metal lead 3 are respectively connected with the first diode chip 11 and the second diode chip 12 through a first welding sheet layer 7, and the homopolar ends of the first diode chip 11 and the second diode chip 12 are electrically connected through a second welding sheet layer 10;
the welding end 4 of each of the first metal lead 2 and the second metal lead 3 further comprises an end plate 8 and a plurality of convex columns 9 which are positioned on the surface of the end plate 8 and distributed at intervals, and the first bonding pad layer 7 is positioned between the end plate 8 and the convex column 9 of each of the first metal lead 2 and the second metal lead 3 and the first diode chip 11 and the second diode chip 12;
have a first portion 13 of bending between the bonding terminal 4 and the pin end 5 of first metal lead 2, second portion 14 of bending has between the bonding terminal 4 and the pin end 5 of second metal lead 3, and first metal lead 2, the respective pin end 5 of second metal lead 3 are parallel and are less than 6 bottoms of epoxy encapsulation body in the direction of height with 6 bottoms of epoxy encapsulation body, and a through-hole 15 has all been opened to this first portion 13 of bending of first metal lead 2 and the second portion 14 of bending of second metal lead 3.
The area ratio 10 between the respective areas of the first diode chip 11 and the second diode chip 12 and the respective areas of the first diode chip 11 and the second diode chip 12: 1.8.
the through hole 15 is located at the middle of the first bent portion 13 or the second metal lead 3.
When the bidirectional patch transient voltage suppression diode is adopted, the position offset of a diode chip and a metal lead in the welding process is effectively improved, and cold welding is avoided, so that the reliability of a device is improved, and the service life of the chip is prolonged; still, have a first portion of bending between its first metal lead's the welding end and the pin end, the second portion of bending has between the welding end of second metal lead and the pin end, and first metal lead, the respective pin end of second metal lead are parallel and are less than epoxy packaging body bottom in the direction of height with epoxy packaging body bottom, and a through-hole has all been opened to the first portion of bending of this first metal lead and the second portion of bending of second metal lead, reduces the space that occupies simultaneously, is favorable to welding and thermal diffusion.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (3)
1. A bidirectional patch transient voltage suppressor diode, comprising: the method comprises the following steps: a first diode chip (11), a second diode chip (12), a first metal lead (2) and a second metal lead (3), the welding ends (4) of the first diode chip (11), the second diode chip (12) and the first metal lead (2) and the second metal lead (3) are all positioned in the epoxy packaging body (6), the pin ends (5) of the first metal lead (2) and the second metal lead (3) respectively extend out from the bottom of the epoxy packaging body (6), the welding ends (4) of the first metal lead (2) and the second metal lead (3) are respectively connected with the first diode chip (11) and the second diode chip (12) through the first welding sheet layer (7), and the homopolar ends of the first diode chip (11) and the second diode chip (12) are electrically connected through the second welding sheet layer (10);
the welding ends (4) of the first metal lead (2) and the second metal lead (3) respectively further comprise an end panel (8) and a plurality of convex columns (9) which are positioned on the surface of the end panel (8) and distributed at intervals, and 2 first welding sheet layers (7) are respectively positioned between the end panel (8) and the convex column (9) of the first metal lead (2) and the second metal lead (3) respectively and between the first diode chip (11) and the second diode chip (12);
have a first portion of bending (13) between welding end (4) and the pin end (5) of first metal lead (2), second portion of bending (14) have between welding end (4) and the pin end (5) of second metal lead (3), first metal lead (2), the respective pin end (5) of second metal lead (3) are parallel and are less than epoxy packaging body (6) bottom in the direction of height with epoxy packaging body (6) bottom, and first portion of bending (13) of this first metal lead (2) and second portion of bending (14) of second metal lead (3) all open a through-hole (15).
2. The bi-directional patch transient voltage suppressor diode of claim 1, wherein: the area ratio of the areas of the first diode chip (11) and the second diode chip (12) to the cross-sectional areas of the bent parts of the first metal lead (2) and the second metal lead (3) is 10: 1 to 2.
3. The bi-directional patch transient voltage suppressor diode of claim 1, wherein: the through hole (15) is positioned in the middle of the first bending part (13) or the second metal lead (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021219248.4U CN212136443U (en) | 2020-06-28 | 2020-06-28 | Bidirectional patch transient voltage suppression diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021219248.4U CN212136443U (en) | 2020-06-28 | 2020-06-28 | Bidirectional patch transient voltage suppression diode |
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| CN212136443U true CN212136443U (en) | 2020-12-11 |
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| CN202021219248.4U Active CN212136443U (en) | 2020-06-28 | 2020-06-28 | Bidirectional patch transient voltage suppression diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241339A (en) * | 2021-04-29 | 2021-08-10 | 东莞市佳骏电子科技有限公司 | High-power silicon carbide diode and manufacturing method thereof |
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2020
- 2020-06-28 CN CN202021219248.4U patent/CN212136443U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113241339A (en) * | 2021-04-29 | 2021-08-10 | 东莞市佳骏电子科技有限公司 | High-power silicon carbide diode and manufacturing method thereof |
| CN113241339B (en) * | 2021-04-29 | 2022-06-21 | 东莞市佳骏电子科技有限公司 | High-power silicon carbide diode and manufacturing method thereof |
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