CN212136427U - Fast recovery reverse semiconductor device - Google Patents
Fast recovery reverse semiconductor device Download PDFInfo
- Publication number
- CN212136427U CN212136427U CN202021217856.1U CN202021217856U CN212136427U CN 212136427 U CN212136427 U CN 212136427U CN 202021217856 U CN202021217856 U CN 202021217856U CN 212136427 U CN212136427 U CN 212136427U
- Authority
- CN
- China
- Prior art keywords
- metal lead
- welding
- diode chip
- end panel
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a resume reverse semiconductor device fast, include: the LED chip comprises a diode chip, a first metal lead and a second metal lead, wherein the welding ends of the diode chip, the first metal lead and the second metal lead are positioned in the epoxy packaging body; the welding end of the first metal lead further comprises a first end panel and a plurality of first convex columns which are positioned on the surface of the first end panel and distributed at intervals, and the first end panel and the first convex columns of the first metal lead are connected with the protruding end of the diode chip through a first welding sheet layer; the first metal lead and the second metal lead are respectively provided with a flange plate in the middle part, and the flange plate is provided with a plurality of through holes at intervals along the circumferential direction. The utility model discloses the offset of fast recovery reverse semiconductor device diode chip and metal lead wire in the welding process has effectively been improved, has avoided the rosin joint to inside having improved the reliability of device and having effectively avoided the entering device of steam, improved weather fastness.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a resume reverse semiconductor device fast.
Background
The power electronic device is a power semiconductor device capable of realizing high-efficiency application and accurate control of electric energy, and is the basis of power electronic technology. The increasing energy and environmental problems make people pay more and more attention to the conversion efficiency and quality of electric energy, and the rapid development of power devices along the directions of high efficiency, high frequency, high voltage resistance, high power, integration, intellectualization and the like is also guided.
Under many operating conditions, these devices require an anti-parallel diode to provide a freewheeling path, reducing the charge and discharge time of the capacitor while suppressing the high voltages induced by transient reversals in load current.
Disclosure of Invention
The utility model aims at providing a reverse semiconductor device recovers fast, this reverse semiconductor device recovers fast has effectively improved diode chip and metal lead's skew in welding process, has avoided the rosin joint to inside having improved the reliability of device and having effectively avoided the entering device of steam, improved the weatherability.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a fast recovery reverse semiconductor device comprising: the LED chip comprises a diode chip, a first metal lead and a second metal lead, wherein the welding ends of the diode chip, the first metal lead and the second metal lead are positioned in the epoxy packaging body, the pin ends of the first metal lead and the second metal lead respectively extend out from two sides of the epoxy packaging body, one end of the diode chip, which is provided with a glass passivation layer, is a convex end, and the other end of the diode chip is a plane end;
the welding end of the first metal lead further comprises a first end panel and a plurality of first convex columns which are positioned on the surface of the first end panel and distributed at intervals, and the first end panel and the first convex columns of the first metal lead are connected with the protruding end of the diode chip through a first welding sheet layer;
the welding end of the second metal lead further comprises a second end panel and a plurality of second convex columns which are positioned on the surface of the second end panel and distributed at intervals, and the second end panel and the second convex columns of the second metal lead are connected with the plane end of the diode chip through second welding sheet layers;
the first metal lead and the second metal lead are respectively provided with a flange plate in the middle, the flange plate is provided with a plurality of through holes at intervals along the circumferential direction, and the flange plate is positioned in the epoxy packaging body.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the soldering lug layer is a tin layer or a silver layer.
2. In the above scheme, the height of the first convex column of the first metal lead is greater than the height of the second convex column of the second metal lead.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
1. the utility model discloses quick recovery reverse semiconductor device, its first metal lead's welding end further includes first end panel and is located a plurality of first projection of first end panel surface interval distribution, first end panel, first projection and the protruding end of diode chip of first metal lead are connected through first soldering lug layer; the welding end of the second metal lead further comprises a second end panel and a plurality of second convex columns which are positioned on the surface of the second end panel and distributed at intervals, the second end panel and the second convex columns of the second metal lead are connected with the plane end of the diode chip through a second soldering lug layer, the position deviation of the diode chip and the metal lead in the welding process is effectively improved, the false welding is avoided, and therefore the reliability of the device is improved and the service life of the chip is prolonged.
2. The utility model discloses reverse semiconductor device of quick recovery, its first metal lead wire, the respective middle part of second metal lead wire have a flange board, and this flange board is opened along circumference interval has a plurality of through-hole, the flange board is located the epoxy packaging body, has further consolidated the joint strength of first metal lead wire, second metal lead wire and epoxy packaging body, avoids the layering phenomenon that follow-up long-time use appears, has effectively avoided inside the entering device of steam, has improved the weatherability.
Drawings
Fig. 1 is the utility model discloses recover reverse semiconductor device structure schematic diagram fast.
In the above drawings: 1. a diode chip; 2. a first metal lead; 3. a second metal lead; 4. welding the end; 5. a pin end; 6. an epoxy package; 71. a first solder pad layer; 72. a second solder pad layer; 81. a first end panel; 82. a second end panel; 91. a first convex column; 92. a second convex column; 10. a flange plate; 101. a through hole; 11. and a glass passivation layer.
Detailed Description
Example 1: a fast recovery reverse semiconductor device comprising: the LED chip comprises a diode chip 1, a first metal lead 2 and a second metal lead 3, wherein the welding ends 4 of the diode chip 1, the first metal lead 2 and the second metal lead 3 are positioned in an epoxy packaging body 6, pin ends 5 of the first metal lead 2 and the second metal lead 3 respectively extend out from two sides of the epoxy packaging body 6, one end of the diode chip 1, which is provided with a glass passivation layer 11, is a convex end, and the other end of the diode chip is a plane end;
the welding end 4 of the first metal lead 2 further comprises a first end panel 81 and a plurality of first convex columns 91 which are arranged on the surface of the first end panel 81 at intervals, and the first end panel 81 and the first convex columns 91 of the first metal lead 2 are connected with the convex ends of the diode chips 1 through a first welding sheet layer 71;
the welding end 4 of the second metal lead 3 further comprises a second end panel 82 and a plurality of second convex columns 92 which are positioned on the surface of the second end panel 82 and distributed at intervals, and the second end panel 82 and the second convex columns 92 of the second metal lead 3 are connected with the planar end of the diode chip 1 through a second welding sheet layer 72;
the first metal lead 2 and the second metal lead 3 each have a flange plate 10 at the center, the flange plate 10 has a plurality of through holes 101 spaced along the circumference, and the flange plate 10 is located in the epoxy package 6.
The first and second solder layers 71 and 72 are silver layers.
Example 2: a fast recovery reverse semiconductor device comprising: the LED chip comprises a diode chip 1, a first metal lead 2 and a second metal lead 3, wherein the welding ends 4 of the diode chip 1, the first metal lead 2 and the second metal lead 3 are positioned in an epoxy packaging body 6, pin ends 5 of the first metal lead 2 and the second metal lead 3 respectively extend out from two sides of the epoxy packaging body 6, one end of the diode chip 1, which is provided with a glass passivation layer 11, is a convex end, and the other end of the diode chip is a plane end;
the welding end 4 of the first metal lead 2 further comprises a first end panel 81 and a plurality of first convex columns 91 which are arranged on the surface of the first end panel 81 at intervals, and the first end panel 81 and the first convex columns 91 of the first metal lead 2 are connected with the convex ends of the diode chips 1 through a first welding sheet layer 71;
the welding end 4 of the second metal lead 3 further comprises a second end panel 82 and a plurality of second convex columns 92 which are positioned on the surface of the second end panel 82 and distributed at intervals, and the second end panel 82 and the second convex columns 92 of the second metal lead 3 are connected with the planar end of the diode chip 1 through a second welding sheet layer 72;
the first metal lead 2 and the second metal lead 3 each have a flange plate 10 at the center, the flange plate 10 has a plurality of through holes 101 spaced along the circumference, and the flange plate 10 is located in the epoxy package 6.
The first and second solder layers 71 and 72 are tin layers.
The height of the first convex column 91 of the first metal lead 2 is greater than the height of the second convex column 92 of the second metal lead 3.
When the rapid recovery reverse semiconductor device is adopted, the position deviation of the diode chip and the metal lead in the welding process is effectively improved, and the cold joint is avoided, so that the reliability of the device is improved, and the service life of the chip is prolonged; and the flange plate is positioned in the epoxy packaging body, so that the bonding strength of the first metal lead, the second metal lead and the epoxy packaging body is further strengthened, the layering phenomenon in subsequent long-time use is avoided, the water vapor is effectively prevented from entering the device, and the weather resistance is improved.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (3)
1. A fast recovery reverse semiconductor device, characterized by: the method comprises the following steps: the LED chip comprises a diode chip (1), a first metal lead (2) and a second metal lead (3), wherein the welding ends (4) of the diode chip (1), the first metal lead (2) and the second metal lead (3) are positioned in an epoxy packaging body (6), pin ends (5) of the first metal lead (2) and the second metal lead (3) respectively extend out of two sides of the epoxy packaging body (6), one end of the diode chip (1) provided with a glass passivation layer (11) is a convex end, and the other end of the diode chip is a plane end;
the welding end (4) of the first metal lead (2) further comprises a first end panel (81) and a plurality of first convex columns (91) which are positioned on the surface of the first end panel (81) at intervals, and the first end panel (81) and the first convex columns (91) of the first metal lead (2) are connected with the convex ends of the diode chips (1) through a first welding sheet layer (71);
the welding end (4) of the second metal lead (3) further comprises a second end panel (82) and a plurality of second convex columns (92) which are positioned on the surface of the second end panel (82) and distributed at intervals, and the second end panel (82) and the second convex columns (92) of the second metal lead (3) are connected with the plane end of the diode chip (1) through a second welding sheet layer (72);
the respective middle parts of the first metal lead (2) and the second metal lead (3) are provided with a flange plate (10), the flange plate (10) is provided with a plurality of through holes (101) at intervals along the circumferential direction, and the flange plate (10) is positioned in the epoxy packaging body (6).
2. The fast recovery reverse semiconductor device of claim 1, wherein: the first welding flux layer (71) and the second welding flux layer (72) are tin layers or silver layers.
3. The fast recovery reverse semiconductor device of claim 1, wherein: the height of the first convex column (91) of the first metal lead (2) is larger than that of the second convex column (92) of the second metal lead (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021217856.1U CN212136427U (en) | 2020-06-28 | 2020-06-28 | Fast recovery reverse semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021217856.1U CN212136427U (en) | 2020-06-28 | 2020-06-28 | Fast recovery reverse semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212136427U true CN212136427U (en) | 2020-12-11 |
Family
ID=73686213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021217856.1U Active CN212136427U (en) | 2020-06-28 | 2020-06-28 | Fast recovery reverse semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212136427U (en) |
-
2020
- 2020-06-28 CN CN202021217856.1U patent/CN212136427U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2016045227A1 (en) | Main-gate-free and high-efficiency back contact solar cell module, assembly and preparation process | |
| US20120152331A1 (en) | Solar battery assembly | |
| CN103403882A (en) | Solar cell module and method for manufacturing same | |
| CN101582413B (en) | Power module with lower stray inductance | |
| CN103094135A (en) | Encapsulation method for flip chip | |
| JP2011249663A (en) | Solar cell module and manufacturing method thereof | |
| CN201417771Y (en) | Power module with lower stray inductance | |
| CN212136427U (en) | Fast recovery reverse semiconductor device | |
| CN201075387Y (en) | Patch type power diode | |
| CN201479030U (en) | Thin three-phase bridge rectifier | |
| CN212136441U (en) | High-reliability bidirectional TVS diode | |
| CN212136429U (en) | Fast recovery power axial semiconductor device | |
| CN210073809U (en) | Crimping type IGBT internal packaging structure | |
| CN212136443U (en) | Bidirectional patch transient voltage suppression diode | |
| CN212136442U (en) | High surge bidirectional transient voltage suppression semiconductor device | |
| CN204614783U (en) | A kind of Intelligent Power Module | |
| CN212113708U (en) | Paster frame of high-power semiconductor device and package thereof | |
| CN216902964U (en) | Reinforced photovoltaic bypass diode module | |
| CN203775045U (en) | Intelligent semiconductor power module | |
| CN216413063U (en) | Transient suppression diode | |
| CN216413064U (en) | High-reliability semiconductor rectifying device | |
| CN208655640U (en) | Chip synchronous rectification device | |
| CN216450631U (en) | Novel two-way transient suppression diode of paster | |
| CN216413066U (en) | Packaging structure of semiconductor chip | |
| CN212136428U (en) | Surface mount diode device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |