CN208655640U - Chip synchronous rectification device - Google Patents
Chip synchronous rectification device Download PDFInfo
- Publication number
- CN208655640U CN208655640U CN201821366212.1U CN201821366212U CN208655640U CN 208655640 U CN208655640 U CN 208655640U CN 201821366212 U CN201821366212 U CN 201821366212U CN 208655640 U CN208655640 U CN 208655640U
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- chip
- bonding
- synchronous rectification
- rectification device
- metal framework
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
The utility model discloses a kind of chip synchronous rectification device, by MOSFET chip, control IC chip and energy-accumulating element are integrated on metal framework, shape uses small-sized epoxy resin enclosed body chip package, and outer dimension accounts for the single rectifier diode that plate suqare is equal on pcb board, can directly replace, user is not while increasing PCB surface product, synchronous rectification is increased, cost is greatly reduced, improves production efficiency.First Transition bonding region and the second transition bonding region are set on metal framework, first bonding point is on chip, second bonding point is on metal framework, avoid damage of the bonding process chopper to chip, ensure that bonding wire pulling force meets the requirements, connection open circuit phenomenon is prevented, the yield and reliability of chip synchronous rectification device are improved.
Description
Technical field
The utility model relates to a kind of chip synchronous rectification devices, belong to capable AC and DC converting field.
Background technique
Capable AC and the development of direct current switch technology field are very fast at present, and circuit of synchronous rectification is replacing rectifying tube.?
In the case where low-voltage, High-current output, the conduction voltage drop VF higher of rectifying tube, the loss of output end rectifying tube is especially prominent.
The fast conduction voltage drop VF for restoring pipe (FRD) or Ultrafast recovery pipe (SRD) is up to 1.0~1.2V, even if using the Xiao Te of low pressure drop
Base tube (SBD), can also generate the pressure drop of about 0.6V, this results in rectifier loss to increase, and power-efficient reduces.Power MOSFET
On state resistance it is very low, conduction voltage drop is smaller, generally can only achieve 0.006V or so, can be very good improve circuit efficiency.
Circuit of synchronous rectification is to replace rectifying tube using the extremely low power MOSFET of on state resistance, therefore can substantially reduce rectifier
Loss improves the efficiency of DC/DC converter, meets the needs of low pressure, high current rectification.Currently, most of circuit of synchronous rectification
It is made of MOSFET element, control circuit and energy-accumulating element three parts, in use, directly three parts are welded on pcb board, outside
It is more to enclose element, occupancy PCB surface product is also big, and the cost is relatively high.
Summary of the invention
In view of the drawbacks of the prior art, the utility model provides a kind of chip synchronous rectification device, by MOSFET chip, control
IC chip processed and energy-accumulating element are integrated on metal framework, can directly be substituted single rectifier diode on pcb board, not increased
While PCB surface product, synchronous rectification is increased, cost is greatly reduced, improves production efficiency.
In order to solve the technical problem, the technical solution adopted in the utility model is: a kind of chip synchronous rectification device,
Including metal framework, metal framework is equipped with the anode and cathode of chip synchronous rectification device, is additionally provided on metal framework
MOSFET chip bonding die area, control IC chip bonding die area, energy-accumulating element bonding die area, First Transition bonding region and the second transition bonding
Area, control IC bonding die area are connected with the cathode of chip synchronous rectification device, energy-accumulating element bonding die area and chip synchronous rectification device
Anode be connected；In MOSFET chip bonding die area, source electrode is synchronous with chip whole by bonding wire for the drain solder of MOSFET chip
The anode for flowing device is connected, and control IC chip is bonded in control IC chip bonding die area, controls the grid of IC chip and MOSFET chip
It is connected with bonding wire by First Transition bonding region between pole, energy-accumulating element is bonded in energy-accumulating element bonding die area, one end and chip
The anode of synchronous rectification device is connected, and the other end is connected with control IC chip with bonding wire by the second transition bonding region.
Further, control IC chip is bonded in control IC chip bonding die area, energy-accumulating element by nonconducting adhesive
Energy-accumulating element bonding die area is welded on by conductive solder.
Further, the metal framework for completing internal element attachment and bonding is sealed with epoxy resin into chip packaging appearance.
Further, the point that bonding wire is connect with MOSFET chip or control IC chip is the first bonding point, with first
Transition bonding region or the point of the second transition bonding region connection are the second bonding point.
Further, the metal framework is copper frame.
The utility model has the beneficial effects that the utility model by MOSFET chip, controls IC chip and energy-accumulating element is integrated
On metal framework, shape uses small-sized epoxy resin enclosed body chip package, and outer dimension accounts for plate suqare and is equal on pcb board
Single rectifier diode, can directly replace, user do not increase PCB surface product while, increase synchronous rectification, greatly
Width reduces cost, improves production efficiency.First Transition bonding region and the second transition bonding region, the first key are set on metal framework
For chalaza on chip, the second bonding point avoids damage of the bonding process chopper to chip on metal framework, ensures bonding
Silk pulling force meets the requirements, and prevents connection open circuit phenomenon, improves the yield and reliability of chip synchronous rectification device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of chip synchronous rectification device metal framework；
Fig. 2 is the structural schematic diagram after metal framework bonding die；
Fig. 3 is the structural schematic diagram after metal framework bonding；
Fig. 4 is the appearance schematic diagram of chip synchronous rectification device；
In figure: 00, metal framework, 01, anode, 02, cathode, 11, MOSFET chip bonding die area, 12, control IC chip it is viscous
Section, 13, energy-accumulating element bonding die area, the 14, second transition bonding region, 15, First Transition bonding region, 21, MOSFET chip, 22,
Control IC chip, 23, energy-accumulating element, 24, bonding wire, the drain electrode of D, MOSFET chip, the source electrode of S, MOSFET chip, G,
The grid of MOSFET chip.
Specific embodiment
The utility model is further described in the following with reference to the drawings and specific embodiments.
A kind of chip synchronous rectification device, including metal framework 00, as shown in Figure 1, including for the signal of metal framework 00
Figure, metal framework 00 are equipped with the anode 01 and cathode 02 of chip synchronous rectification device, are additionally provided with MOSFET on metal framework 00
Chip bonding die area 11, control IC chip bonding die area 12, energy-accumulating element bonding die area 13, First Transition bonding region 15 and the second transition key
Area 14 is closed, control IC bonding die area 12 is connected with the cathode 02 of chip synchronous rectification device, and energy-accumulating element bonding die area 13 is same with chip
The anode 01 for walking rectifying device is connected.
As shown in Figure 2,3, the drain D of MOSFET chip is welded on MOSFET chip bonding die area 11, and source S passes through bonding wire
24 are connected with the anode 01 of chip synchronous rectification device, and control IC chip 22 is bonded in control IC chip bonding die area 12, control IC
It is connected with bonding wire by First Transition bonding region 15 between chip 22 and the grid G of MOSFET chip, energy-accumulating element 23 is bonded
In energy-accumulating element bonding die area 13, one end is connected with the anode 01 of chip synchronous rectification device, and the other end and control IC chip 22 are used
Bonding wire is connected by the second transition bonding region 14.In the present embodiment, control IC chip is bonded in by nonconducting adhesive
IC chip bonding die area is controlled, control IC chip and extraneous connection realize that energy-accumulating element 23 passes through conductive weldering by bonding wire
Material is welded on energy-accumulating element bonding die area 13.
The technological difficulties of the utility model are in a limited space, to realize MOSFET chip 21, control IC chip 22 and store
The High Density Integration of energy 23 3 kinds of hybrid devices of element.To ensure chip synchronous rectification device reliability, the first bonding point is needed
On chip, the second bonding point is on metal framework, and otherwise, when inner lead bonding chopper, which is easy to weigh chip wounded, causes function to lose
Effect；Between energy-accumulating element and chip can not Direct Bonding because position precision and height error are opposite after solder bonding die
Metal framework is big, influences to be bonded yield and reliability.Therefore by bonding wire 24 and MOSFET chip 21 or control IC chip 22
The point of connection is the first bonding point, and the point connected with First Transition bonding region 15 or the second transition bonding region 14 is bonded for second
Point.The second transition bonding region 14 being arranged realizes energy-accumulating element 23 and controls the connection of IC chip 22, avoids influencing bonding yield
And reliability.
In the present embodiment, after metal framework 00 completes internal element attachment and bonding, with epoxy resin enclosed at chip
Packaging appearance.As shown in figure 4, for the outline drawing of the chip synchronous rectification device after encapsulation, the chip synchronous rectifier after encapsulation
Part is identical as the area that single rectifying tube occupies, and can directly weld and be welded on pcb board, while not increasing PCB surface product, increases
Add synchronous rectification, cost is greatly reduced, improves production efficiency.
In the present embodiment, the metal framework 00 is copper frame.
First is set up between MOSFET chip 21 and control IC chip 22 on the metal framework of the present embodiment metal framework
Transition bonding region 15 controls and the second transition bonding region 14 is arranged between IC chip 22 and energy-accumulating element 23, and the first bonding point is in core
On piece, the second bonding point avoid damage of the bonding process chopper to chip on metal framework, ensure bonding wire pulling force symbol
It closes and requires, prevent connection open circuit phenomenon, improve the yield and reliability of chip synchronous rectification device.
Described above is only the basic principle and preferred embodiment of the utility model, and those skilled in the art are practical to this
The novel improvement and replacement made, belongs to the protection scope of the utility model.
Claims (5)
1. a kind of chip synchronous rectification device, it is characterised in that: including metal framework, metal framework is equipped with chip synchronous rectification
It is viscous to be additionally provided with MOSFET chip bonding die area, control IC chip bonding die area, energy-accumulating element on metal framework for the anode and cathode of device
Section, First Transition bonding region and the second transition bonding region, control IC bonding die area are connected with the cathode of chip synchronous rectification device,
Energy-accumulating element bonding die area is connected with the anode of chip synchronous rectification device；The drain solder of MOSFET chip is viscous in MOSFET chip
Section, source electrode are connected by bonding wire with the anode of chip synchronous rectification device, and it is viscous that control IC chip is bonded in control IC chip
Section controls and is connected with bonding wire by First Transition bonding region between IC chip and the grid of MOSFET chip, energy-accumulating element
It is bonded in energy-accumulating element bonding die area, one end is connected with the anode of chip synchronous rectification device, the other end and control IC chip key
Plying is connected by the second transition bonding region.
2. chip synchronous rectification device according to claim 1, it is characterised in that: complete what internal element was mounted and was bonded
Metal framework is sealed with epoxy resin into chip packaging appearance.
3. chip synchronous rectification device according to claim 1, it is characterised in that: control IC chip passes through nonconducting glue
Stick is bonded in control IC chip bonding die area, and energy-accumulating element is welded on energy-accumulating element bonding die area by conductive solder.
4. chip synchronous rectification device according to claim 1, it is characterised in that: bonding wire and MOSFET chip or control
The point of IC chip connection processed is the first bonding point, and the point connecting with First Transition bonding region or the second transition bonding region is second
Bonding point.
5. chip synchronous rectification device according to claim 1, it is characterised in that: the metal framework is copper frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821366212.1U CN208655640U (en) | 2018-08-23 | 2018-08-23 | Chip synchronous rectification device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821366212.1U CN208655640U (en) | 2018-08-23 | 2018-08-23 | Chip synchronous rectification device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208655640U true CN208655640U (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821366212.1U Active CN208655640U (en) | 2018-08-23 | 2018-08-23 | Chip synchronous rectification device |
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| CN (1) | CN208655640U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922883A (en) * | 2018-08-23 | 2018-11-30 | 济南晶恒电子有限责任公司 | Chip synchronous rectification device |
-
2018
- 2018-08-23 CN CN201821366212.1U patent/CN208655640U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922883A (en) * | 2018-08-23 | 2018-11-30 | 济南晶恒电子有限责任公司 | Chip synchronous rectification device |
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