CN207781590U - High reliability compact rectifier bridge structure - Google Patents
High reliability compact rectifier bridge structure Download PDFInfo
- Publication number
- CN207781590U CN207781590U CN201721420499.7U CN201721420499U CN207781590U CN 207781590 U CN207781590 U CN 207781590U CN 201721420499 U CN201721420499 U CN 201721420499U CN 207781590 U CN207781590 U CN 207781590U
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- China
- Prior art keywords
- shaped
- input pin
- backlight unit
- diode chip
- pin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Rectifiers (AREA)
Abstract
The utility model discloses a kind of high reliability compact rectifier bridge structure, including：The first, second, third, fourth diode chip for backlight unit coated by epoxy packages body and the first Z-shaped input pin, the second Z-shaped input pin, L-shaped anode input pin and the L-shaped cathode output pin for exposing epoxy packages body；The L-shaped anode input pin and L-shaped cathode output pin are made of wafer support area, direct current output lead portion and the second bending part between wafer support area, direct current output lead portion, the L-shaped anode input pin and L-shaped cathode output pin respective wafer support area intermediate region are provided with first through hole, and respectively wafer support area is provided with the second through-hole close to the side of direct current output lead portion for the L-shaped anode input pin and L-shaped cathode output pin.The utility model reduces structural stress and reduces effect of the epoxy injecting glue in the process to internal structural impact power.
Description
Technical field
The utility model is related to a kind of rectified semiconductor device more particularly to a kind of high reliability compact rectifier bridge knots
Structure.
Background technology
The bridge architecture that rectifier bridge device is made of four rectifier diodes, it utilizes the unilateal conduction of diode
Characteristic carries out rectification to alternating current, since bridge rectifier doubles to the utilization ratio for inputting positive sine wave than wave rectification, is
One kind of diode halfwave rectifier is significantly improved, therefore is widely used in alternating current and is converted into the circuit of direct current.
Existing rectifier bridge device architecture is limited by space layout, cannot encapsulate the larger sized chips of 60mil or more, can not
Meets the needs of end product miniaturization, product structure stress is larger, is not suitable for encapsulation 60mil or more large size chips, product
Thickness is logical big, cannot meet the needs of end product compact designed, the production technology precision determined by product structure is not high.
Invention content
The utility model aim is to provide a kind of high reliability compact rectifier bridge structure, the high reliability compact rectification
Bridge structure reduces structural stress and reduces the effect during epoxy injecting glue to internal structural impact power, and improve device can
By property.
In order to achieve the above objectives, the technical solution adopted in the utility model is：A kind of high reliability compact rectifier bridge knot
Structure, including：The first, second, third, fourth diode chip for backlight unit for being coated by epoxy packages body and expose epoxy packages body the
One Z-shaped input pin, the second Z-shaped input pin, L-shaped anode input pin and L-shaped cathode output pin；
The respective anode of first, second diode chip for backlight unit is electrically connected with L-shaped anode input pin upper surface, third, the 4th
The respective cathode of diode chip for backlight unit is electrically connected with L-shaped cathode output pin upper surface, the cathode of the first diode chip for backlight unit, the four or two
The anode of pole pipe chip is electrically connected by the first connection sheet with the first Z-shaped input pin, the cathode of the second diode chip for backlight unit, the
The anode of three diode chip for backlight unit is electrically connected by the second connection sheet with the second Z-shaped input pin；
The L-shaped anode input pin and L-shaped cathode output pin are by wafer support area, direct current output lead portion and position
The second bending part composition between wafer support area, direct current output lead portion, the L-shaped anode input pin and L-shaped cathode
Output pin respective wafer support area intermediate region is provided with first through hole, the L-shaped anode input pin and the output of L-shaped cathode
Respectively wafer support area is provided with the second through-hole to pin close to the side of direct current output lead portion.
Further improved scheme is as follows in above-mentioned technical proposal：
1. in said program, the first Z-shaped input pin, the second Z-shaped input pin are by horizontal connection portion, level
Input pin portion and the first bending part composition between horizontal connection portion, horizontal input pin portion.
2. in said program, the angle number of degrees of the direct current output lead portion and the second bending part are 110 ° ~ 150 °.
Since above-mentioned technical proposal is used, the utility model has following advantages and effect compared with prior art：
1. the utility model high reliability compact rectifier bridge structure, L-shaped anode input pin and the output of L-shaped cathode
Pin respective wafer support area intermediate region is provided with first through hole, the L-shaped anode input pin and L-shaped cathode output pin
Respective wafer support area is provided with the second through-hole close to the side of direct current output lead portion, reduces structural stress and reduces epoxy
Effect during injecting glue to internal structural impact power, improves the reliability of device.
2. the utility model high reliability compact rectifier bridge structure is realized by the product structure of optimization more
The design requirement of bigger chip size is encapsulated in small product design size, maximum chip size increases to 88mil by 60mil,
It solves the problems, such as the structural stress that large size chip is brought, realizes product thickness and be reduced in size to original 40% or so, pass through
The product structure and lead frame structure of optimization, process efficiency improve 1 times or more.
Description of the drawings
Attached drawing 1 is the utility model high reliability compact rectifier bridge structure structural schematic diagram；
Attached drawing 2 is the cross-sectional view of attached drawing 1.
In the figures above：1, epoxy packages body；2, the first diode chip for backlight unit；3, the second diode chip for backlight unit；4, the three or two pole
Tube chip；5, the 4th diode chip for backlight unit；6, the first Z-shaped input pin；7, the second Z-shaped input pin；8, L-shaped anode input is drawn
Foot；9, L-shaped cathode output pin；101, horizontal connection portion；102, horizontal input pin portion；103, the first bending part；111, core
Piece Support；112, direct current output lead portion；113, the second bending part；12, first through hole；13, the second through-hole；14, first connects
Contact pin；15, the second connection sheet.
Specific implementation mode
The utility model is further described with reference to the accompanying drawings and embodiments：
Embodiment 1：A kind of high reliability compact rectifier bridge structure, including：First, coated by epoxy packages body 1
Two, third, the 4th diode chip for backlight unit 2,3,4,5 and expose epoxy packages body 1 the first Z-shaped input pin 6, second it is Z-shaped defeated
Enter pin 7, L-shaped anode input pin 8 and L-shaped cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L-shaped anode input pin, third,
4th diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L-shaped cathode output pin, and the first diode chip for backlight unit 2 is born
Pole, the positive of the 4th diode chip for backlight unit 5 are electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode
The cathode of chip 3, the anode of third diode chip for backlight unit 4 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L-shaped anode input pin 8 and L-shaped cathode output pin 9 are by wafer support area 111, direct current output pin
Portion 112 and the second bending part 113 composition between wafer support area 111, direct current output lead portion 112, the L-shaped anode
Input pin 8 and 9 respective 111 intermediate region of wafer support area of L-shaped cathode output pin are provided with first through hole 12, the L-shaped
Positive input pin 8 and 9 respective wafer support area 111 of L-shaped cathode output pin are opened close to the side of direct current output lead portion 112
There is the second through-hole 13.
Above-mentioned first Z-shaped input pin 6, the second Z-shaped input pin 7 are by horizontal connection portion 101, horizontal input pin portion
102 and between horizontal connection portion 101, horizontal input pin portion 102 the first bending part 103 composition.
The angle number of degrees of 112 and second bending part 113 of above-mentioned direct current output lead portion are 130 °.
Embodiment 2：A kind of high reliability compact rectifier bridge structure, including：First, coated by epoxy packages body 1
Two, third, the 4th diode chip for backlight unit 2,3,4,5 and expose epoxy packages body 1 the first Z-shaped input pin 6, second it is Z-shaped defeated
Enter pin 7, L-shaped anode input pin 8 and L-shaped cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L-shaped anode input pin, third,
4th diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L-shaped cathode output pin, and the first diode chip for backlight unit 2 is born
Pole, the positive of the 4th diode chip for backlight unit 5 are electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode
The cathode of chip 3, the anode of third diode chip for backlight unit 4 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L-shaped anode input pin 8 and L-shaped cathode output pin 9 are by wafer support area 111, direct current output pin
Portion 112 and the second bending part 113 composition between wafer support area 111, direct current output lead portion 112, the L-shaped anode
Input pin 8 and 9 respective 111 intermediate region of wafer support area of L-shaped cathode output pin are provided with first through hole 12, the L-shaped
Positive input pin 8 and 9 respective wafer support area 111 of L-shaped cathode output pin are opened close to the side of direct current output lead portion 112
There is the second through-hole 13.
The angle number of degrees of 112 and second bending part 113 of above-mentioned direct current output lead portion are 115 °.
When using above-mentioned high reliability compact rectifier bridge structure, in fact in present compact products, do not reduce cooling fin
On the basis of area, it is effectively increased pin creepage distance, increases product ontology heat dissipation area, improves the reliable of device
Property and safety；Secondly, outer end face of the positive input terminal close to epoxy packages body edge has 2 anodes being spaced apart
Extended leg, outer end face of the negative output terminals close to epoxy packages body edge have 2 cathode extended legs being spaced apart,
In production, when cutting input terminal, the internal influence to device is reduced.
Above-described embodiment is only the technical concepts and features for illustrating the utility model, and its object is to allow be familiar with technique
Personage can understand the content of the utility model and implement according to this, the scope of protection of the utility model can not be limited with this.
It is all according to equivalent change or modification made by the spirit of the present invention essence, should all cover the scope of protection of the utility model it
It is interior.
Claims (3)
1. a kind of high reliability compact rectifier bridge structure, it is characterised in that：Including：By epoxy packages body（1）The first of cladding
Diode chip for backlight unit（2）, the second diode chip for backlight unit（3）, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）With expose ring
Oxygen packaging body（1）The first Z-shaped input pin（6）, the second Z-shaped input pin（7）, L-shaped anode input pin（8）It is negative with L-shaped
Pole output pin（9）；
First diode chip for backlight unit（2）, the second diode chip for backlight unit（3）Respective anode and L-shaped anode input pin（8）Upper surface electricity
Connection, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）Respective cathode and L-shaped cathode output pin（9）Upper surface
Electrical connection, the first diode chip for backlight unit（2）Cathode, the 4th diode chip for backlight unit（5）Anode pass through the first connection sheet（14）With
First Z-shaped input pin（6）Electrical connection, the second diode chip for backlight unit（3）Cathode, third diode chip for backlight unit（4）Anode it is logical
Cross the second connection sheet（15）With the second Z-shaped input pin（7）Electrical connection；
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）By wafer support area（111）, direct current output draws
Foot（112）With positioned at wafer support area（111）, direct current output lead portion（112）Between the second bending part（113）Composition,
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）Intermediate region is provided with
One through-hole（12）, the L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）It is close
Direct current output lead portion（112）Side be provided with the second through-hole（13）.
2. high reliability compact rectifier bridge structure according to claim 1, it is characterised in that：The first Z-shaped input
Pin（6）, the second Z-shaped input pin（7）By horizontal connection portion（101）, horizontal input pin portion（102）Connect with positioned at level
Socket part（101）, horizontal input pin portion（102）Between the first bending part（103）Composition.
3. high reliability compact rectifier bridge structure according to claim 1, it is characterised in that：The direct current output pin
Portion（112）With the second bending part（113）The angle number of degrees be 110 ° ~ 150 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721420499.7U CN207781590U (en) | 2017-10-31 | 2017-10-31 | High reliability compact rectifier bridge structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721420499.7U CN207781590U (en) | 2017-10-31 | 2017-10-31 | High reliability compact rectifier bridge structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207781590U true CN207781590U (en) | 2018-08-28 |
Family
ID=63232836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721420499.7U Active CN207781590U (en) | 2017-10-31 | 2017-10-31 | High reliability compact rectifier bridge structure |
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| Country | Link |
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| CN (1) | CN207781590U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109727938A (en) * | 2017-10-31 | 2019-05-07 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
-
2017
- 2017-10-31 CN CN201721420499.7U patent/CN207781590U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109727938A (en) * | 2017-10-31 | 2019-05-07 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
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