CN207781586U - Rectifying bridge type semiconductor devices - Google Patents

Abstract

The utility model discloses a rectifier bridge type semiconductor device, which comprises first, second, third and fourth diode chips and a first Z-shaped input pin and a second Z-shaped input pin exposed to an epoxy package body. feet, L-shaped positive input pins and L-shaped negative output pins; the L-shaped positive input pins and L-shaped negative output pins are composed of the chip support area, the DC output pin part and the chip support area, DC output The second bending part between the pin parts is composed of a first through hole in the middle area of the chip support area of the L-shaped positive input pin and the L-shaped negative output pin, and the L-shaped positive input pin A second through hole is opened on the side of the respective chip support area of the L-shaped negative output pin near the DC output pin; a first semicircle is opened on both sides of the center of the first connecting piece and the second connecting piece. hole. The utility model reduces the structural stress and the impact force on the internal structure in the process of injecting epoxy glue, and improves the reliability of the device.

Description

rectifier bridge semiconductor device

technical field

The utility model relates to a rectification semiconductor device, in particular to a rectification bridge semiconductor device.

Background technique

The rectifier bridge device is a bridge structure composed of four rectifier diodes. It uses the unidirectional conduction characteristics of the diodes to rectify the alternating current. Since the utilization efficiency of the bridge rectifier for the input sine wave is twice that of the wave rectification, it is suitable for A significant improvement of diode half-wave rectification, it is widely used in circuits that convert alternating current to direct current.

The structure of the existing rectifier bridge device is limited by the space layout, and it cannot be packaged with a chip with a larger size above 60mil, which cannot meet the needs of miniaturization of end products. The product structure is stressed, and it is not suitable for packaging large-sized chips with a size above 60mil. The thickness of the product is generally large. It cannot meet the needs of compact design of end products, and the precision of the production process determined by the product structure is not high.

Contents of the invention

The purpose of the utility model is to provide a rectifying bridge semiconductor device, which reduces the structural stress and the impact force on the internal structure during the epoxy glue injection process, and improves the reliability of the device.

In order to achieve the above purpose, the technical solution adopted by the utility model is: a rectifier bridge semiconductor device, including: first, second, third and fourth diode chips covered by an epoxy package and exposed The first Z-shaped input pin, the second Z-shaped input pin, the L-shaped positive input pin and the L-shaped negative output pin of the epoxy package;

The respective anodes of the first and second diode chips are electrically connected to the upper surface of the L-shaped positive input pin, and the respective negative electrodes of the third and fourth diode chips are electrically connected to the upper surface of the L-shaped negative output pin. The negative pole of the diode chip and the positive pole of the fourth diode chip are electrically connected to the first Z-shaped input pin through the first connecting piece, and the negative pole of the second diode chip and the positive pole of the third diode chip are connected to each other. electrically connected to the second Z-shaped input pin through the second connecting piece;

Both the L-shaped positive input pin and the L-shaped negative output pin are composed of a chip support area, a DC output pin portion, and a second bending portion located between the chip support area and the DC output pin portion;

A first semicircular hole is opened on both sides of the respective centers of the first connecting piece and the second connecting piece, and a first semicircular hole is opened outside the respective chip support areas of the L-shaped positive input pin and the L-shaped negative output pin. A notch, a second notch is formed on both sides of the middle of the chip support area of the L-shaped positive input pin and the L-shaped negative output pin;

A first through hole is opened in the middle area of the chip support area of the L-shaped positive input pin and the L-shaped negative output pin respectively, and the respective chip support areas of the L-shaped positive input pin and the L-shaped negative output pin are close to the DC A second through hole is opened on one side of the output pin part.

The scheme of further improvement in above-mentioned technical scheme is as follows:

1. In the above scheme, the first Z-shaped input pin and the second Z-shaped input pin are composed of a horizontal connection part, a horizontal input pin part, and a first pin between the horizontal connection part and the horizontal input pin part. The bending part is composed.

2. In the above solution, the included angle between the DC output pin part and the second bending part is 110°~150°.

3. In the above solution, the included angle between the horizontal connecting portion and the first bending portion is 110°~150°.

Due to the application of the above-mentioned technical solutions, the utility model has the following advantages and effects compared with the prior art:

1. The rectifier bridge type semiconductor device of the present utility model has a first through hole in the middle area of the respective chip support area of the L-shaped positive input pin and the L-shaped negative output pin, and the L-shaped positive input pin and the L-shaped There is a second through hole on the side of the chip support area of the negative output pins close to the DC output pins, which reduces the structural stress and the impact on the internal structure during the epoxy glue injection process, and improves the performance of the device. reliability; secondly, a first semi-circular hole is opened on both sides of the center of the first connecting piece and the second connecting piece, and the respective chip support areas of the L-shaped positive input pin and the L-shaped negative output pin A first notch is opened on the outer side, and a second notch is opened on both sides of the middle of the respective chip support areas of the L-shaped positive input pin and the L-shaped negative output pin to increase the area of the external pin and increase the edge of the body The effect of epoxy strength increases the strength of edge epoxy, reduces structural stress and reduces the impact on the internal structure during epoxy glue injection.

2. The rectifier bridge semiconductor device of this utility model, through the optimized product structure, realizes the design requirement of packaging a larger chip size in a smaller product outline size, and the maximum chip size is increased from 60mil to 88mil, which solves the problem of large size The structural stress problem brought by the chip has reduced the thickness of the product to about 40% of the original, and the process efficiency has more than doubled.

Description of drawings

Accompanying drawing 1 is the structural representation of the utility model rectifying bridge type semiconductor device;

Accompanying drawing 2 is the schematic cross-sectional structure diagram of accompanying drawing 1.

In the above drawings: 1. Epoxy package; 2. The first diode chip; 3. The second diode chip; 4. The third diode chip; 5. The fourth diode chip; 6. The first Z-shaped input pin; 7. The second Z-shaped input pin; 8. The L-shaped positive input pin; 9. The L-shaped negative output pin; 101. The horizontal connection part; 102. The horizontal input pin; 103. The first bending part; 111. The chip support area; 112. The DC output pin part; 113. The second bending part; 12. The first through hole; 13. The second through hole; 14. The first connecting piece ; 15, the second connecting piece; 16, the first semicircular hole; 17, the first notch; 18, the second notch.

Detailed ways

Below in conjunction with accompanying drawing and embodiment the utility model is further described:

Embodiment 1: a rectifier bridge semiconductor device, comprising: first, second, third and fourth diode chips 2, 3, 4, 5 covered by epoxy encapsulation body 1 and exposed epoxy The first Z-shaped input pin 6, the second Z-shaped input pin 7, the L-shaped positive input pin 8 and the L-shaped negative output pin 9 of the package body 1;

The respective anodes of the first and second diode chips 2 and 3 are electrically connected to the upper surface of the L-shaped positive input pin 8, and the respective negative poles of the third and fourth diode chips 4 and 5 are connected to the L-shaped negative output pin. 9. The upper surface is electrically connected, the cathode of the first diode chip 2 and the anode of the fourth diode chip 5 are electrically connected to the first Z-shaped input pin 6 through the first connecting piece 14, and the second diode chip The negative pole of 3 and the positive pole of the third diode chip 4 are electrically connected to the second Z-shaped input pin 7 through the second connecting piece 15;

Both the L-shaped positive input pin 8 and the L-shaped negative output pin 9 are composed of a chip support area 111, a DC output pin portion 112, and a second bend between the chip support area 111 and the DC output pin portion 112. Section 113 consists of;

There is a first semicircular hole 16 on both sides of the respective centers of the first connecting piece 14 and the second connecting piece 15, and the respective chip support areas of the L-shaped positive input pin 8 and the L-shaped negative output pin 9 There is a first notch 17 on the outside of 111, and a second notch 18 is opened on both sides of the middle of the chip support area 111 of the L-shaped positive input pin 8 and the L-shaped negative output pin 9 respectively;

The L-shaped positive input pin 8 and the L-shaped negative output pin 9 respectively have a first through hole 12 in the middle area of the chip support area 111, and the L-shaped positive input pin 8 and the L-shaped negative output pin 9 A second through hole 13 is opened on a side of each chip supporting area 111 close to the DC output pin portion 112 .

The above-mentioned first Z-shaped input pin 6 and the second Z-shaped input pin 7 are all composed of a horizontal connection part 101, a horizontal input pin part 102 and a first fold between the horizontal connection part 101 and the horizontal input pin part 102. The bent portion 103 is formed.

The included angle between the DC output pin portion 112 and the second bent portion 113 is 130°.

The included angle between the horizontal connecting portion 101 and the first bending portion 103 is 130°.

Embodiment 2: a rectifier bridge semiconductor device, comprising: the first, second, third, and fourth diode chips 2, 3, 4, 5 covered by an epoxy package 1 and exposed epoxy The first Z-shaped input pin 6, the second Z-shaped input pin 7, the L-shaped positive input pin 8 and the L-shaped negative output pin 9 of the package body 1;

The respective anodes of the first and second diode chips 2 and 3 are electrically connected to the upper surface of the L-shaped positive input pin 8, and the respective negative poles of the third and fourth diode chips 4 and 5 are connected to the L-shaped negative output pin. 9. The upper surface is electrically connected, the cathode of the first diode chip 2 and the anode of the fourth diode chip 5 are electrically connected to the first Z-shaped input pin 6 through the first connecting piece 14, and the second diode chip The negative pole of 3 and the positive pole of the third diode chip 4 are electrically connected to the second Z-shaped input pin 7 through the second connecting piece 15;

Both the L-shaped positive input pin 8 and the L-shaped negative output pin 9 are composed of a chip support area 111, a DC output pin portion 112, and a second bend between the chip support area 111 and the DC output pin portion 112. Section 113 consists of;

There is a first semicircular hole 16 on both sides of the respective centers of the first connecting piece 14 and the second connecting piece 15, and the respective chip support areas of the L-shaped positive input pin 8 and the L-shaped negative output pin 9 There is a first notch 17 on the outside of 111, and a second notch 18 is opened on both sides of the middle of the chip support area 111 of the L-shaped positive input pin 8 and the L-shaped negative output pin 9 respectively;

The L-shaped positive input pin 8 and the L-shaped negative output pin 9 respectively have a first through hole 12 in the middle area of the chip support area 111, and the L-shaped positive input pin 8 and the L-shaped negative output pin 9 A second through hole 13 is opened on a side of each chip supporting area 111 close to the DC output pin portion 112 .

The included angle between the DC output pin portion 112 and the second bent portion 113 is 115°.

The included angle between the horizontal connecting portion 101 and the first bending portion 103 is 115°.

When the above-mentioned rectifier bridge semiconductor device is used, it reduces the structural stress and the impact force on the internal structure during the epoxy glue injection process, and improves the reliability of the device; secondly, it increases the external pin area and increases the body. The effect of edge epoxy strength increases the strength of edge epoxy and reduces the structural stress and the impact on the internal structure during the epoxy glue injection process; again, it achieves a smaller size through the optimized product structure. The design requirements of packaging a larger chip size in the outer dimensions of the product, the maximum chip size increased from 60mil to 88mil, solved the structural stress problem caused by the large-size chip, and realized the reduction of the product thickness to about 40% of the original size. The efficiency has been increased by more than 1 times.

The above-mentioned embodiments are only to illustrate the technical conception and characteristics of the present utility model, and its purpose is to allow those familiar with this technology to understand the content of the utility model and implement it accordingly, and not to limit the protection scope of the utility model. All equivalent changes or modifications made according to the spirit of the utility model shall fall within the protection scope of the utility model.

Claims (4)

1. a kind of rectifying bridge type semiconductor devices, it is characterised in that：Including：By epoxy packages body（1）First diode of cladding Chip（2）, the second diode chip for backlight unit（3）, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）With expose epoxy packages Body（1）The first Z-shaped input pin（6）, the second Z-shaped input pin（7）, L-shaped anode input pin（8）It is exported with L-shaped cathode Pin（9）；

First diode chip for backlight unit（2）, the second diode chip for backlight unit（3）Respective anode and L-shaped anode input pin（8）Upper surface electricity Connection, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）Respective cathode and L-shaped cathode output pin（9）Upper surface Electrical connection, the first diode chip for backlight unit（2）Cathode, the 4th diode chip for backlight unit（5）Anode pass through the first connection sheet（14）With First Z-shaped input pin（6）Electrical connection, the second diode chip for backlight unit（3）Cathode, third diode chip for backlight unit（4）Anode it is logical Cross the second connection sheet（15）With the second Z-shaped input pin（7）Electrical connection；

The L-shaped anode input pin（8）With L-shaped cathode output pin（9）By wafer support area（111）, direct current output draws Foot（112）With positioned at wafer support area（111）, direct current output lead portion（112）Between the second bending part（113）Composition；

First connection sheet（14）, the second connection sheet（15）Both sides are provided with one first semicircle orifice at respective center（16）, The L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）Outside is provided with one One notch section（17）, the L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111） Middle both sides are provided with one second notch section（18）；

The L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）It opens intermediate region There is first through hole（12）, the L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111） Close to direct current output lead portion（112）Side be provided with the second through-hole（13）.

2. rectifying bridge type semiconductor devices according to claim 1, it is characterised in that：The first Z-shaped input pin （6）, the second Z-shaped input pin（7）By horizontal connection portion（101）, horizontal input pin portion（102）With positioned at horizontal connection portion （101）, horizontal input pin portion（102）Between the first bending part（103）Composition.

3. rectifying bridge type semiconductor devices according to claim 1, it is characterised in that：The direct current output lead portion （112）With the second bending part（113）The angle number of degrees be 110 ° ~ 150 °.

4. rectifying bridge type semiconductor devices according to claim 2, it is characterised in that：The horizontal connection portion（101）With First bending part（103）The angle number of degrees be 110 ° ~ 150 °.