CN207781586U - Rectifying bridge type semiconductor devices - Google Patents
Rectifying bridge type semiconductor devices Download PDFInfo
- Publication number
- CN207781586U CN207781586U CN201721433165.3U CN201721433165U CN207781586U CN 207781586 U CN207781586 U CN 207781586U CN 201721433165 U CN201721433165 U CN 201721433165U CN 207781586 U CN207781586 U CN 207781586U
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- shaped
- input pin
- pin
- backlight unit
- diode chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of rectifying bridge type semiconductor devices, including the first, second, third, fourth diode chip for backlight unit and the first Z-shaped input pin, the second Z-shaped input pin, L-shaped anode input pin and the L-shaped cathode output pin that expose epoxy packages body；The L-shaped anode input pin and L-shaped cathode output pin are made of wafer support area, direct current output lead portion and the second bending part between wafer support area, direct current output lead portion, the L-shaped anode input pin and L-shaped cathode output pin respective wafer support area intermediate region are provided with first through hole, and respectively wafer support area is provided with the second through-hole close to the side of direct current output lead portion for the L-shaped anode input pin and L-shaped cathode output pin；Both sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet.The utility model reduces structural stress and reduces effect of the epoxy injecting glue in the process to internal structural impact power, improves the reliability of device.
Description
Technical field
The utility model is related to a kind of rectified semiconductor device more particularly to a kind of rectifying bridge type semiconductor devices.
Background technology
The bridge architecture that rectifier bridge device is made of four rectifier diodes, it utilizes the unilateal conduction of diode
Characteristic carries out rectification to alternating current, since bridge rectifier doubles to the utilization ratio for inputting positive sine wave than wave rectification, is
One kind of diode halfwave rectifier is significantly improved, therefore is widely used in alternating current and is converted into the circuit of direct current.
Existing rectifier bridge device architecture is limited by space layout, cannot encapsulate the larger sized chips of 60mil or more, can not
Meets the needs of end product miniaturization, product structure stress is larger, is not suitable for encapsulation 60mil or more large size chips, product
Thickness is logical big, cannot meet the needs of end product compact designed, the production technology precision determined by product structure is not high.
Invention content
The utility model aim is to provide a kind of rectifying bridge type semiconductor devices, which reduces knot
Structure stress and the effect during epoxy injecting glue to internal structural impact power is reduced, improves the reliability of device.
In order to achieve the above objectives, the technical solution adopted in the utility model is：A kind of rectifying bridge type semiconductor devices, packet
It includes：The first, second, third, fourth diode chip for backlight unit for being coated by epoxy packages body and expose epoxy packages body it is first Z-shaped
Input pin, the second Z-shaped input pin, L-shaped anode input pin and L-shaped cathode output pin；
The respective anode of first, second diode chip for backlight unit is electrically connected with L-shaped anode input pin upper surface, third, the 4th
The respective cathode of diode chip for backlight unit is electrically connected with L-shaped cathode output pin upper surface, the cathode of the first diode chip for backlight unit, the four or two
The anode of pole pipe chip is electrically connected by the first connection sheet with the first Z-shaped input pin, the cathode of the second diode chip for backlight unit, the
The anode of three diode chip for backlight unit is electrically connected by the second connection sheet with the second Z-shaped input pin；
The L-shaped anode input pin and L-shaped cathode output pin are by wafer support area, direct current output lead portion and position
The second bending part composition between wafer support area, direct current output lead portion；
Both sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet, and the L-shaped is just
One first notch section, the L-shaped anode are provided on the outside of pole input pin and the respective wafer support area of L-shaped cathode output pin
Input pin and L-shaped cathode output pin respective wafer support area middle both sides are provided with one second notch section；
The L-shaped anode input pin and L-shaped cathode output pin respective wafer support area intermediate region are provided with first
Through-hole, the L-shaped anode input pin and L-shaped cathode output pin respectively wafer support area close to direct current output lead portion one
Side is provided with the second through-hole.
Further improved scheme is as follows in above-mentioned technical proposal：
1. in said program, the first Z-shaped input pin, the second Z-shaped input pin are by horizontal connection portion, level
Input pin portion and the first bending part composition between horizontal connection portion, horizontal input pin portion.
2. in said program, the angle number of degrees of the direct current output lead portion and the second bending part are 110 ° ~ 150 °.
3. in said program, the angle number of degrees of the horizontal connection portion and the first bending part are 110 ° ~ 150 °.
Since above-mentioned technical proposal is used, the utility model has following advantages and effect compared with prior art：
1. the utility model rectifying bridge type semiconductor devices, L-shaped anode input pin and L-shaped cathode output pin are each
From wafer support area intermediate region be provided with first through hole, the respective core of the L-shaped anode input pin and L-shaped cathode output pin
Piece Support is provided with the second through-hole close to the side of direct current output lead portion, reduces structural stress and reduces epoxy injecting glue mistake
To the effect of internal structural impact power in journey, the reliability of device is improved；Secondly, the first connection sheet, the second connection sheet are each
From center at both sides be provided with one first semicircle orifice, the L-shaped anode input pin and the respective core of L-shaped cathode output pin
It is provided with one first notch section, the L-shaped anode input pin and the respective chip of L-shaped cathode output pin on the outside of piece Support
Support middle both sides are provided with one second notch section, increase external pin area and increase the work of body edges epoxy intensity
With increasing the intensity of edge epoxy and reduce structural stress and reduce the work during epoxy injecting glue to internal structural impact power
With.
2. the utility model rectifying bridge type semiconductor devices is realized by the product structure of optimization in smaller production
The design requirement of bigger chip size is encapsulated in product appearance and size, maximum chip size increases to 88mil by 60mil, solves
The structural stress problem that large size chip is brought realizes product thickness and is reduced in size to original 40% or so, and process efficiency carries
1 times or more is risen.
Description of the drawings
Attached drawing 1 is the utility model rectifying bridge type semiconductor device structure schematic diagram；
Attached drawing 2 is the cross-sectional view of attached drawing 1.
In the figures above：1, epoxy packages body；2, the first diode chip for backlight unit；3, the second diode chip for backlight unit；4, the three or two pole
Tube chip；5, the 4th diode chip for backlight unit；6, the first Z-shaped input pin；7, the second Z-shaped input pin；8, L-shaped anode input is drawn
Foot；9, L-shaped cathode output pin；101, horizontal connection portion；102, horizontal input pin portion；103, the first bending part；111, core
Piece Support；112, direct current output lead portion；113, the second bending part；12, first through hole；13, the second through-hole；14, first connects
Contact pin；15, the second connection sheet；16, the first semicircle orifice；17, the first notch section；18, the second notch section.
Specific implementation mode
The utility model is further described with reference to the accompanying drawings and embodiments：
Embodiment 1：A kind of rectifying bridge type semiconductor devices, including：First, second, coated by epoxy packages body 1
Three, the 4th diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin of epoxy packages body 1 are exposed
7, L-shaped anode input pin 8 and L-shaped cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L-shaped anode input pin, third,
4th diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L-shaped cathode output pin, and the first diode chip for backlight unit 2 is born
Pole, the positive of the 4th diode chip for backlight unit 5 are electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode
The cathode of chip 3, the anode of third diode chip for backlight unit 4 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L-shaped anode input pin 8 and L-shaped cathode output pin 9 are by wafer support area 111, direct current output pin
Portion 112 and the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Both sides are provided with one first semicircle orifice 16, institute at first connection sheet 14,15 respective center of the second connection sheet
It states L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 outside is provided with one first notch section
17, the L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 middle both sides are provided with
One second notch section 18；
The L-shaped anode input pin 8 and 9 respective 111 intermediate region of wafer support area of L-shaped cathode output pin are provided with
First through hole 12, the L-shaped anode input pin 8 and 9 respective wafer support area 111 of L-shaped cathode output pin are defeated close to direct current
The side for going out lead portion 112 is provided with the second through-hole 13.
Above-mentioned first Z-shaped input pin 6, the second Z-shaped input pin 7 are by horizontal connection portion 101, horizontal input pin portion
102 and between horizontal connection portion 101, horizontal input pin portion 102 the first bending part 103 composition.
The angle number of degrees of 112 and second bending part 113 of above-mentioned direct current output lead portion are 130 °.
The angle number of degrees of 101 and first bending part 103 of above-mentioned horizontal connection portion are 130 °.
Embodiment 2：A kind of rectifying bridge type semiconductor devices, including：First, second, coated by epoxy packages body 1
Three, the 4th diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin of epoxy packages body 1 are exposed
7, L-shaped anode input pin 8 and L-shaped cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L-shaped anode input pin, third,
4th diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L-shaped cathode output pin, and the first diode chip for backlight unit 2 is born
Pole, the positive of the 4th diode chip for backlight unit 5 are electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode
The cathode of chip 3, the anode of third diode chip for backlight unit 4 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L-shaped anode input pin 8 and L-shaped cathode output pin 9 are by wafer support area 111, direct current output pin
Portion 112 and the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Both sides are provided with one first semicircle orifice 16, institute at first connection sheet 14,15 respective center of the second connection sheet
It states L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 outside is provided with one first notch section
17, the L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 middle both sides are provided with
One second notch section 18；
The L-shaped anode input pin 8 and 9 respective 111 intermediate region of wafer support area of L-shaped cathode output pin are provided with
First through hole 12, the L-shaped anode input pin 8 and 9 respective wafer support area 111 of L-shaped cathode output pin are defeated close to direct current
The side for going out lead portion 112 is provided with the second through-hole 13.
The angle number of degrees of 112 and second bending part 113 of above-mentioned direct current output lead portion are 115 °.
The angle number of degrees of 101 and first bending part 103 of above-mentioned horizontal connection portion are 115 °.
When using above-mentioned rectifying bridge type semiconductor devices, reduces structural stress and reduce internal during epoxy injecting glue
The effect of portion's structural impact power, improves the reliability of device；Secondly, increase external pin area and increase body edges ring
The effect of oxygen intensity increases the intensity of edge epoxy and reduces structural stress and reduce epoxy injecting glue in the process to internal structure
The effect of impact force；Again, by the product structure of optimization, the encapsulation bigger core in smaller product design size is realized
The design requirement of chip size, maximum chip size increase to 88mil by 60mil, solve the structure that large size chip is brought and answer
Power problem realizes product thickness and is reduced in size to original 40% or so, and process efficiency improves 1 times or more.
Above-described embodiment is only the technical concepts and features for illustrating the utility model, and its object is to allow be familiar with technique
Personage can understand the content of the utility model and implement according to this, the scope of protection of the utility model can not be limited with this.
It is all according to equivalent change or modification made by the spirit of the present invention essence, should all cover the scope of protection of the utility model it
It is interior.
Claims (4)
1. a kind of rectifying bridge type semiconductor devices, it is characterised in that：Including：By epoxy packages body（1）First diode of cladding
Chip（2）, the second diode chip for backlight unit（3）, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）With expose epoxy packages
Body（1）The first Z-shaped input pin（6）, the second Z-shaped input pin（7）, L-shaped anode input pin（8）It is exported with L-shaped cathode
Pin（9）；
First diode chip for backlight unit（2）, the second diode chip for backlight unit（3）Respective anode and L-shaped anode input pin（8）Upper surface electricity
Connection, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）Respective cathode and L-shaped cathode output pin（9）Upper surface
Electrical connection, the first diode chip for backlight unit（2）Cathode, the 4th diode chip for backlight unit（5）Anode pass through the first connection sheet（14）With
First Z-shaped input pin（6）Electrical connection, the second diode chip for backlight unit（3）Cathode, third diode chip for backlight unit（4）Anode it is logical
Cross the second connection sheet（15）With the second Z-shaped input pin（7）Electrical connection；
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）By wafer support area（111）, direct current output draws
Foot（112）With positioned at wafer support area（111）, direct current output lead portion（112）Between the second bending part（113）Composition；
First connection sheet（14）, the second connection sheet（15）Both sides are provided with one first semicircle orifice at respective center（16）,
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）Outside is provided with one
One notch section（17）, the L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）
Middle both sides are provided with one second notch section（18）；
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）It opens intermediate region
There is first through hole（12）, the L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）
Close to direct current output lead portion（112）Side be provided with the second through-hole（13）.
2. rectifying bridge type semiconductor devices according to claim 1, it is characterised in that：The first Z-shaped input pin
（6）, the second Z-shaped input pin（7）By horizontal connection portion（101）, horizontal input pin portion（102）With positioned at horizontal connection portion
（101）, horizontal input pin portion（102）Between the first bending part（103）Composition.
3. rectifying bridge type semiconductor devices according to claim 1, it is characterised in that：The direct current output lead portion
（112）With the second bending part（113）The angle number of degrees be 110 ° ~ 150 °.
4. rectifying bridge type semiconductor devices according to claim 2, it is characterised in that：The horizontal connection portion（101）With
First bending part（103）The angle number of degrees be 110 ° ~ 150 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721433165.3U CN207781586U (en) | 2017-10-31 | 2017-10-31 | Rectifying bridge type semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721433165.3U CN207781586U (en) | 2017-10-31 | 2017-10-31 | Rectifying bridge type semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207781586U true CN207781586U (en) | 2018-08-28 |
Family
ID=63232937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721433165.3U Active CN207781586U (en) | 2017-10-31 | 2017-10-31 | Rectifying bridge type semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207781586U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300885A (en) * | 2018-12-05 | 2019-02-01 | 常州银河世纪微电子股份有限公司 | Rectifier bridge and its application method |
| CN109727938A (en) * | 2017-10-31 | 2019-05-07 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
| CN110010599A (en) * | 2019-04-25 | 2019-07-12 | 广东美的制冷设备有限公司 | Highly integrated intelligent power module and preparation method thereof and air conditioner |
| CN110085579A (en) * | 2019-04-25 | 2019-08-02 | 广东美的制冷设备有限公司 | Highly integrated intelligent power module and preparation method thereof and air conditioner |
-
2017
- 2017-10-31 CN CN201721433165.3U patent/CN207781586U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109727938A (en) * | 2017-10-31 | 2019-05-07 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
| CN109300885A (en) * | 2018-12-05 | 2019-02-01 | 常州银河世纪微电子股份有限公司 | Rectifier bridge and its application method |
| CN110010599A (en) * | 2019-04-25 | 2019-07-12 | 广东美的制冷设备有限公司 | Highly integrated intelligent power module and preparation method thereof and air conditioner |
| CN110085579A (en) * | 2019-04-25 | 2019-08-02 | 广东美的制冷设备有限公司 | Highly integrated intelligent power module and preparation method thereof and air conditioner |
| CN110085579B (en) * | 2019-04-25 | 2022-03-25 | 广东美的制冷设备有限公司 | High-integration intelligent power module, manufacturing method thereof and air conditioner |
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