CN109727938A - Rectifying bridge type semiconductor devices - Google Patents

Rectifying bridge type semiconductor devices Download PDF

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Publication number
CN109727938A
CN109727938A CN201711060290.9A CN201711060290A CN109727938A CN 109727938 A CN109727938 A CN 109727938A CN 201711060290 A CN201711060290 A CN 201711060290A CN 109727938 A CN109727938 A CN 109727938A
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China
Prior art keywords
shaped
input pin
pin
output pin
support area
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CN201711060290.9A
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Chinese (zh)
Inventor
何洪运
程琳
刘玉龙
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Suzhou Good Ark Electronics Co Ltd
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Suzhou Good Ark Electronics Co Ltd
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Priority to CN201711060290.9A priority Critical patent/CN109727938A/en
Publication of CN109727938A publication Critical patent/CN109727938A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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Abstract

本发明公开一种整流桥式半导体器件，包括第一、第二、第三、第四二极管芯片和裸露出环氧封装体的第一Z形输入引脚、第二Z形输入引脚、L形正极输入引脚和L形负极输出引脚；所述L形正极输入引脚和L形负极输出引脚均由芯片支撑区、直流输出引脚部和位于芯片支撑区、直流输出引脚部之间的第二折弯部组成，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区中间区域开有第一通孔，所述L形正极输入引脚和L形负极输出引脚各自芯片支撑区靠近直流输出引脚部的一侧开有第二通孔；所述第一连接片、第二连接片各自的中心处两侧均开有一第一半圆孔。本发明减小结构应力和减小了环氧注胶过程中对内部结构冲击力的作用，提高了器件的可靠性。

The invention discloses a rectifier bridge type semiconductor device, comprising first, second, third and fourth diode chips and first Z-shaped input pins and second Z-shaped input pins exposing epoxy packaging bodies , L-shaped positive input pin and L-shaped negative output pin; the L-shaped positive input pin and L-shaped negative output pin are both formed by the chip support area, the DC output pin part and the DC output lead located in the chip support area. The second bending part between the feet is composed of a first through hole in the middle area of the chip support area of the L-shaped positive input pin and the L-shaped negative output pin, and the L-shaped positive input pin and the L-shaped negative output pin have a first through hole. A second through hole is opened on the side of the chip support area of the L-shaped negative output pin, which is close to the DC output pin part; a first semicircular hole is opened on both sides of the center of the first connecting piece and the second connecting piece. . The invention reduces the structural stress and the effect of the impact force on the internal structure during the epoxy gluing process, and improves the reliability of the device.

Description

Rectifying bridge type semiconductor devices
Technical field
The present invention relates to a kind of rectified semiconductor device more particularly to a kind of rectifying bridge type semiconductor devices.
Background technique
The bridge architecture that rectifier bridge device is made of four rectifier diodes, it utilizes the unilateal conduction of diode Characteristic rectifies alternating current, since bridge rectifier doubles to the utilization efficiency for inputting positive sine wave than wave rectification, is One kind of diode halfwave rectifier is significantly improved, therefore is widely used in alternating current and is converted into the circuit of direct current.
Existing rectifier bridge device architecture is limited by space layout, cannot encapsulate the larger sized chip of 60mil or more, can not Meets the needs of end product miniaturization, product structure stress is larger, is not suitable for encapsulation 60mil or more large size chip, product Thickness is logical big, is not able to satisfy the demand of end product compact designed, the production technology precision determined by product structure is not high.
Summary of the invention
It is an object of the present invention to provide a kind of rectifying bridge type semiconductor devices, which reduces structure and answers Power and the effect during epoxy injecting glue to internal structural impact power is reduced, improves the reliability of device.
In order to achieve the above objectives, the technical solution adopted by the present invention is that: a kind of rectifying bridge type semiconductor devices, comprising: by First, second, third, fourth diode chip for backlight unit of epoxy packages body cladding and the first Z-shaped input for exposing epoxy packages body Pin, the second Z-shaped input pin, L shape anode input pin and L shape cathode output pin；
The respective anode of first, second diode chip for backlight unit is electrically connected with L shape anode input pin upper surface, third, the four or two pole The respective cathode of tube chip is electrically connected with L shape cathode output pin upper surface, the cathode of first diode chip, the 4th diode The anode of chip is electrically connected by the first connection sheet with the first Z-shaped input pin, the cathode of the second diode chip for backlight unit, the three or two The anode of pole pipe chip is electrically connected by the second connection sheet with the second Z-shaped input pin；
The L shape anode input pin and L shape cathode output pin by wafer support area, direct current output lead portion and are located at core The second bending part composition between piece Support, direct current output lead portion；
Two sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet, and the L shape anode is defeated Enter and is provided with one first notch section on the outside of pin and the respective wafer support area of L shape cathode output pin, the L shape anode input Pin and the shape cathode output pin respective wafer support area L middle two sides are provided with one second notch section；
The L shape anode input pin and the shape cathode output pin respective wafer support area L intermediate region are provided with first through hole, The L shape anode input pin and L shape cathode output pin are respectively opened in wafer support area close to the side of direct current output lead portion There is the second through-hole.
Further improved scheme is as follows in above-mentioned technical proposal:
1. in above scheme, the first Z-shaped input pin, the second Z-shaped input pin are by horizontal connection portion, horizontal input Lead portion and the first bending part composition between horizontal connection portion, horizontal input pin portion.
2. in above scheme, the angle degree of the direct current output lead portion and the second bending part is 110 ° ~ 150 °.
3. in above scheme, the angle degree of the horizontal connection portion and the first bending part is 110 ° ~ 150 °.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
1. rectifying bridge type semiconductor devices of the present invention, L shape anode input pin and the respective chip of L shape cathode output pin Support intermediate region is provided with first through hole, the respective wafer support area of the L shape anode input pin and L shape cathode output pin Side close to direct current output lead portion is provided with the second through-hole, reduces structural stress and reduces internal during epoxy injecting glue The effect of portion's structural impact power, improves the reliability of device；Secondly, its first connection sheet, the respective center of the second connection sheet Place two sides are provided with one first semicircle orifice, the L shape anode input pin and the respective wafer support area of L shape cathode output pin Outside is provided with one first notch section, in the L shape anode input pin and the respective wafer support area of L shape cathode output pin Between two sides be provided with one second notch section, increase external pin area and increase the effect of body edges epoxy intensity, increase The intensity of edge epoxy and reduces structural stress and reduce the effect during epoxy injecting glue to internal structural impact power.
2. rectifying bridge type semiconductor devices of the present invention is realized outside smaller product by the product structure of optimization The design requirement of more large chip size is encapsulated in shape size, maximum chip size increases to 88mil by 60mil, solves big ruler Very little chip bring structural stress problem, realizes product thickness and is reduced in size to original 40% or so, process efficiency improves 1 times or more.
Detailed description of the invention
Attached drawing 1 is rectifying bridge type semiconductor device structure schematic diagram of the present invention；
Attached drawing 2 is the schematic diagram of the section structure of attached drawing 1.
In the figures above: 1, epoxy packages body；2, first diode chip；3, the second diode chip for backlight unit；4, the three or two pole Tube chip；5, the 4th diode chip for backlight unit；6, the first Z-shaped input pin；7, the second Z-shaped input pin；8, L shape anode input is drawn Foot；9, L shape cathode output pin；101, horizontal connection portion；102, horizontal input pin portion；103, the first bending part；111, core Piece Support；112, direct current output lead portion；113, the second bending part；12, first through hole；13, the second through-hole；14, first connects Contact pin；15, the second connection sheet；16, the first semicircle orifice；17, the first notch section；18, the second notch section.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and embodiments:
A kind of embodiment 1: rectifying bridge type semiconductor devices, comprising: first, second, third, coated by epoxy packages body 1 Four diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin 7, L shape for exposing epoxy packages body 1 Positive input pin 8 and L shape cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L shape anode input pin, third, the 4th Diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L shape cathode output pin, the cathode of first diode chip 2, The anode of 4th diode chip for backlight unit 5 is electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode core The cathode of piece 2, the anode of third diode chip for backlight unit 5 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L shape anode input pin 8 and L shape cathode output pin 9 are by wafer support area 111, direct current output lead portion 112 And the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Two sides are provided with one first semicircle orifice 16, the L shape at first connection sheet 14, the respective center of the second connection sheet 15 Positive input pin 8 and respective 111 outside of wafer support area of L shape cathode output pin 9 are provided with one first notch section 17, institute It states L shape anode input pin 8 and the respective 111 middle two sides of wafer support area of L shape cathode output pin 9 is provided with one second Notch section 18；
The L shape anode input pin 8 and respective 111 intermediate region of wafer support area of L shape cathode output pin 9 are provided with first Through-hole 12, the L shape anode input pin 8 and the respective wafer support area 111 of L shape cathode output pin 9 draw close to direct current output The side of foot 112 is provided with the second through-hole 13.
Above-mentioned first Z-shaped input pin 6, the second Z-shaped input pin 7 are by horizontal connection portion 101, horizontal input pin portion 102 and between horizontal connection portion 101, horizontal input pin portion 102 the first bending part 103 composition.
The angle degree of above-mentioned direct current output lead portion 112 and the second bending part 113 is 130 °.
The angle degree of above-mentioned horizontal connection portion 101 and the first bending part 103 is 130 °.
A kind of embodiment 2: rectifying bridge type semiconductor devices, comprising: first, second, coated by epoxy packages body 1 Three, the 4th diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin of epoxy packages body 1 are exposed 7, L shape anode input pin 8 and L shape cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L shape anode input pin, third, the 4th Diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L shape cathode output pin, the cathode of first diode chip 2, The anode of 4th diode chip for backlight unit 5 is electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode core The cathode of piece 2, the anode of third diode chip for backlight unit 5 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L shape anode input pin 8 and L shape cathode output pin 9 are by wafer support area 111, direct current output lead portion 112 And the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Two sides are provided with one first semicircle orifice 16, the L shape at first connection sheet 14, the respective center of the second connection sheet 15 Positive input pin 8 and respective 111 outside of wafer support area of L shape cathode output pin 9 are provided with one first notch section 17, institute It states L shape anode input pin 8 and the respective 111 middle two sides of wafer support area of L shape cathode output pin 9 is provided with one second Notch section 18；
The L shape anode input pin 8 and respective 111 intermediate region of wafer support area of L shape cathode output pin 9 are provided with first Through-hole 12, the L shape anode input pin 8 and the respective wafer support area 111 of L shape cathode output pin 9 draw close to direct current output The side of foot 112 is provided with the second through-hole 13.
The angle degree of above-mentioned direct current output lead portion 112 and the second bending part 113 is 115 °.
The angle degree of above-mentioned horizontal connection portion 101 and the first bending part 103 is 115 °.
When using above-mentioned rectifying bridge type semiconductor devices, reduces structural stress and reduce internal during epoxy injecting glue The effect of portion's structural impact power, improves the reliability of device；Secondly, it increases external pin area and increases body edges ring The effect of oxygen intensity increases the intensity of edge epoxy and reduces structural stress and reduce epoxy injecting glue in the process to internal structure The effect of impact force；Again, it by the product structure of optimization, realizes and encapsulates bigger core in smaller product outline size The design requirement of chip size, maximum chip size increase to 88mil by 60mil, solve large size chip bring structure and answer Power problem realizes product thickness and is reduced in size to original 40% or so, and process efficiency improves 1 times or more.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.

Claims (4)

1.一种整流桥式半导体器件，其特征在于：包括：由环氧封装体（1）包覆的第一、第二、第三、第四二极管芯片（2、3、4、5）和裸露出环氧封装体（1）的第一Z形输入引脚（6）、第二Z形输入引脚（7）、L形正极输入引脚（8）和L形负极输出引脚（9）；1. A rectifier bridge semiconductor device, characterized in that it comprises: first, second, third and fourth diode chips (2, 3, 4, 5) covered by an epoxy package (1). ) and the first Z-shaped input pin (6), second Z-shaped input pin (7), L-shaped positive input pin (8) and L-shaped negative output pin of the exposed epoxy package (1) (9); 第一、第二二极管芯片（2、3）各自的正极与L形正极输入引脚（8）上表面电连接，第三、第四二极管芯片（4、5）各自的负极与L形负极输出引脚（9）上表面电连接，第一二极管芯片（2）的负极、第四二极管芯片（5）的正极均通过第一连接片（14）与第一Z形输入引脚（6）电连接，第二二极管芯片（2）的负极、第三二极管芯片（5）的正极均通过第二连接片（15）与第二Z形输入引脚（7）电连接；The respective anodes of the first and second diode chips (2, 3) are electrically connected to the upper surface of the L-shaped anode input pin (8), and the respective cathodes of the third and fourth diode chips (4, 5) are electrically connected to the upper surface of the L-shaped anode input pin (8). The upper surface of the L-shaped negative output pin (9) is electrically connected, and the negative electrode of the first diode chip (2) and the positive electrode of the fourth diode chip (5) are connected to the first Z through the first connecting piece (14). The input pin (6) is electrically connected, the negative electrode of the second diode chip (2) and the positive electrode of the third diode chip (5) are connected to the second Z-shaped input pin through the second connecting piece (15) (7) Electrical connection; 所述L形正极输入引脚（8）和L形负极输出引脚（9）均由芯片支撑区（111）、直流输出引脚部（112）和位于芯片支撑区（111）、直流输出引脚部（112）之间的第二折弯部（113）组成；The L-shaped positive input pin (8) and the L-shaped negative output pin (9) are both formed by a chip support area (111), a DC output pin portion (112) and a DC output lead located in the chip support area (111). The second bending part (113) between the feet (112) is composed; 所述第一连接片（14）、第二连接片（15）各自的中心处两侧均开有一第一半圆孔（16），所述L形正极输入引脚（8）和L形负极输出引脚（9）各自的芯片支撑区（111）外侧均开有一第一缺口部（17），所述L形正极输入引脚（8）和L形负极输出引脚（9）各自的芯片支撑区（111）中间处两侧均开有一第二缺口部（18）；A first semicircular hole (16) is opened on both sides of the center of the first connecting piece (14) and the second connecting piece (15), and the L-shaped positive input pin (8) and the L-shaped negative output pin A first notch (17) is formed on the outside of the respective chip support areas (111) of the pins (9), and the respective chips of the L-shaped positive input pin (8) and the L-shaped negative output pin (9) are supported A second notch (18) is opened on both sides of the middle of the area (111); 所述L形正极输入引脚（8）和L形负极输出引脚（9）各自的芯片支撑区（111）中间区域开有第一通孔（12），所述L形正极输入引脚（8）和L形负极输出引脚（9）各自芯片支撑区（111）靠近直流输出引脚部（112）的一侧开有第二通孔（13）。The L-shaped positive input pin (8) and the L-shaped negative output pin (9) are respectively provided with a first through hole (12) in the middle area of the chip support area (111), and the L-shaped positive input pin ( 8) and the L-shaped negative output pin (9) is provided with a second through hole (13) on one side of the chip support area (111) close to the DC output pin portion (112). 2.根据权利要求1所述的整流桥式半导体器件，其特征在于：所述第一Z形输入引脚（6）、第二Z形输入引脚（7）均由水平连接部（101）、水平输入引脚部（102）和位于水平连接部（101）、水平输入引脚部（102）之间的第一折弯部（103）组成。2 . The rectifier bridge semiconductor device according to claim 1 , wherein the first Z-shaped input pin ( 6 ) and the second Z-shaped input pin ( 7 ) are both connected by a horizontal connecting portion ( 101 ). 3 . and a horizontal input pin part (102) and a first bending part (103) located between the horizontal connection part (101) and the horizontal input pin part (102). 3.根据权利要求1所述的整流桥式半导体器件，其特征在于：所述直流输出引脚部（112）与第二折弯部（113）的夹角度数为110°~150°。3 . The rectifier bridge semiconductor device according to claim 1 , wherein the angle between the DC output pin portion ( 112 ) and the second bending portion ( 113 ) is 110° to 150°. 4 . 4.根据权利要求2所述的整流桥式半导体器件，其特征在于：所述水平连接部（101）与第一折弯部（103）的夹角度数为110°~150°。4 . The rectifier bridge semiconductor device according to claim 2 , wherein the angle between the horizontal connecting portion ( 101 ) and the first bending portion ( 103 ) is 110°˜150°. 5 .
CN201711060290.9A 2017-10-31 2017-10-31 Rectifying bridge type semiconductor devices Pending CN109727938A (en)

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CN112185941A (en) * 2020-09-28 2021-01-05 深圳市汇川技术股份有限公司 Semiconductor packaging part, motor controller and new energy automobile
CN115910976A (en) * 2021-09-23 2023-04-04 苏州固锝电子股份有限公司 Semiconductor rectifier bridge

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CN102842572A (en) * 2011-06-24 2012-12-26 上海金克半导体设备有限公司 Small double-row bridge rectifier
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112185941A (en) * 2020-09-28 2021-01-05 深圳市汇川技术股份有限公司 Semiconductor packaging part, motor controller and new energy automobile
CN115910976A (en) * 2021-09-23 2023-04-04 苏州固锝电子股份有限公司 Semiconductor rectifier bridge

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Application publication date: 20190507