CN207781591U - High intensity rectifier bridge device - Google Patents
High intensity rectifier bridge device Download PDFInfo
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- CN207781591U CN207781591U CN201721443090.7U CN201721443090U CN207781591U CN 207781591 U CN207781591 U CN 207781591U CN 201721443090 U CN201721443090 U CN 201721443090U CN 207781591 U CN207781591 U CN 207781591U
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- input pin
- backlight unit
- diode chip
- pin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Rectifiers (AREA)
Abstract
The utility model discloses a kind of high intensity rectifier bridge device, the respective anode of its first, second diode chip for backlight unit is electrically connected with L-shaped anode input pin upper surface, third, the 4th respective cathode of diode chip for backlight unit are electrically connected with L-shaped cathode output pin upper surface, the cathode of first diode chip for backlight unit, the positive of the 4th diode chip for backlight unit are electrically connected by the first connection sheet with the first Z-shaped input pin, and the cathode of the second diode chip for backlight unit, the anode of third diode chip for backlight unit are electrically connected by the second connection sheet with the second Z-shaped input pin；Both sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet, it is provided with one first notch section on the outside of the L-shaped anode input pin and the respective wafer support area of L-shaped cathode output pin, the L-shaped anode input pin and L-shaped cathode output pin respective wafer support area middle both sides are provided with one second notch section.The utility model increases the effect of external pin area and increase body edges epoxy intensity, increases the intensity of edge epoxy and reduces structural stress and reduce effect of the epoxy injecting glue in the process to internal structural impact power.
Description
Technical field
The utility model is related to a kind of rectified semiconductor device more particularly to a kind of high intensity rectifier bridge devices.
Background technology
The bridge architecture that rectifier bridge device is made of four rectifier diodes, it utilizes the unilateal conduction of diode
Characteristic carries out rectification to alternating current, since bridge rectifier doubles to the utilization ratio for inputting positive sine wave than wave rectification, is
One kind of diode halfwave rectifier is significantly improved, therefore is widely used in alternating current and is converted into the circuit of direct current.
Existing rectifier bridge device architecture is limited by space layout, cannot encapsulate the larger sized chips of 60mil or more, can not
Meets the needs of end product miniaturization, product structure stress is larger, is not suitable for encapsulation 60mil or more large size chips, product
Thickness is logical big, cannot meet the needs of end product compact designed, the production technology precision determined by product structure is not high.
Invention content
The utility model aim is to provide a kind of high intensity rectifier bridge device, which increases external draw
Instep product and the effect for increasing body edges epoxy intensity increase the intensity of edge epoxy and reduce structural stress and reduce ring
Effect during oxygen injecting glue to internal structural impact power.
In order to achieve the above objectives, the technical solution adopted in the utility model is：A kind of high intensity rectifier bridge device, including：
The first, second, third, fourth diode chip for backlight unit for being coated by epoxy packages body and expose epoxy packages body it is first Z-shaped defeated
Enter pin, the second Z-shaped input pin, L-shaped anode input pin and L-shaped cathode output pin；
The respective anode of first, second diode chip for backlight unit is electrically connected with L-shaped anode input pin upper surface, third, the 4th
The respective cathode of diode chip for backlight unit is electrically connected with L-shaped cathode output pin upper surface, the cathode of the first diode chip for backlight unit, the four or two
The anode of pole pipe chip is electrically connected by the first connection sheet with the first Z-shaped input pin, the cathode of the second diode chip for backlight unit, the
The anode of three diode chip for backlight unit is electrically connected by the second connection sheet with the second Z-shaped input pin；
The L-shaped anode input pin and L-shaped cathode output pin are by wafer support area, direct current output lead portion and position
The second bending part composition between wafer support area, direct current output lead portion；
Both sides are provided with one first semicircle orifice at first connection sheet, the respective center of the second connection sheet, and the L-shaped is just
One first notch section, the L-shaped anode are provided on the outside of pole input pin and the respective wafer support area of L-shaped cathode output pin
Input pin and L-shaped cathode output pin respective wafer support area middle both sides are provided with one second notch section；
The L-shaped anode input pin and L-shaped cathode output pin respective wafer support area intermediate region are provided with first
Through-hole, the L-shaped anode input pin and L-shaped cathode output pin respectively wafer support area close to direct current output lead portion one
Side is provided with the second through-hole.
Further improved scheme is as follows in above-mentioned technical proposal：
1. in said program, the first Z-shaped input pin, the second Z-shaped input pin are by horizontal connection portion, level
Input pin portion and the first bending part composition between horizontal connection portion, horizontal input pin portion.
2. in said program, the angle number of degrees of the horizontal connection portion and the first bending part are 110 ° ~ 150 °.
Since above-mentioned technical proposal is used, the utility model has following advantages and effect compared with prior art：
1. the utility model high intensity rectifier bridge device, both sides at the first connection sheet, the respective center of the second connection sheet
It is provided with one first semicircle orifice, the L-shaped anode input pin and the respective wafer support area outside of L-shaped cathode output pin are
It is provided with one first notch section, the L-shaped anode input pin and L-shaped cathode output pin respective wafer support area middle two
Side is provided with one second notch section, increases external pin area and increases the effect of body edges epoxy intensity, increases edge
Effect during the intensity and reduction structural stress and reduction epoxy injecting glue of epoxy to internal structural impact power.
2. the utility model high intensity rectifier bridge device is realized by the product structure of optimization in smaller product
The design requirement of bigger chip size is encapsulated in appearance and size, maximum chip size increases to 88mil by 60mil, solves big
The structural stress problem that scale chips are brought realizes product thickness and is reduced in size to original 40% or so, and process efficiency is promoted
1 times or more.
Description of the drawings
Attached drawing 1 is the utility model high intensity rectifier bridge device structural schematic diagram；
Attached drawing 2 is the cross-sectional view of attached drawing 1.
In the figures above：1, epoxy packages body；2, the first diode chip for backlight unit；3, the second diode chip for backlight unit；4, the three or two pole
Tube chip；5, the 4th diode chip for backlight unit；6, the first Z-shaped input pin；7, the second Z-shaped input pin；8, L-shaped anode input is drawn
Foot；9, L-shaped cathode output pin；101, horizontal connection portion；102, horizontal input pin portion；103, the first bending part；111, core
Piece Support；112, direct current output lead portion；113, the second bending part；14, the first connection sheet；15, the second connection sheet；16,
One semicircle orifice；17, the first notch section；18, the second notch section.
Specific implementation mode
The utility model is further described with reference to the accompanying drawings and embodiments：
Embodiment 1：A kind of high intensity rectifier bridge device, including：By epoxy packages body 1 coat first, second, third,
4th diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin 7, the L for exposing epoxy packages body 1
Shape anode input pin 8 and L-shaped cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L-shaped anode input pin, third,
4th diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L-shaped cathode output pin, and the first diode chip for backlight unit 2 is born
Pole, the positive of the 4th diode chip for backlight unit 5 are electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode
The cathode of chip 3, the anode of third diode chip for backlight unit 4 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L-shaped anode input pin 8 and L-shaped cathode output pin 9 are by wafer support area 111, direct current output pin
Portion 112 and the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Both sides are provided with one first semicircle orifice 16, institute at first connection sheet 14,15 respective center of the second connection sheet
It states L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 outside is provided with one first notch section
17, the L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 middle both sides are provided with
One second notch section 18.
Above-mentioned first Z-shaped input pin 6, the second Z-shaped input pin 7 are by horizontal connection portion 101, horizontal input pin portion
102 and between horizontal connection portion 101, horizontal input pin portion 102 the first bending part 103 composition.
The angle number of degrees of 101 and first bending part 103 of above-mentioned horizontal connection portion are 130 °.
Embodiment 2：A kind of high intensity rectifier bridge device, including：By epoxy packages body 1 coat first, second, third,
4th diode chip for backlight unit 2,3,4,5 and the first Z-shaped input pin 6, the second Z-shaped input pin 7, the L for exposing epoxy packages body 1
Shape anode input pin 8 and L-shaped cathode output pin 9；
First, second diode chip for backlight unit 2,3 respective anodes are electrically connected with 8 upper surface of L-shaped anode input pin, third,
4th diode chip for backlight unit 4,5 respective cathode are electrically connected with 9 upper surface of L-shaped cathode output pin, and the first diode chip for backlight unit 2 is born
Pole, the positive of the 4th diode chip for backlight unit 5 are electrically connected by the first connection sheet 14 with the first Z-shaped input pin 6, the second diode
The cathode of chip 3, the anode of third diode chip for backlight unit 4 are electrically connected by the second connection sheet 15 with the second Z-shaped input pin 7；
The L-shaped anode input pin 8 and L-shaped cathode output pin 9 are by wafer support area 111, direct current output pin
Portion 112 and the second bending part 113 composition between wafer support area 111, direct current output lead portion 112；
Both sides are provided with one first semicircle orifice 16, institute at first connection sheet 14,15 respective center of the second connection sheet
It states L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 outside is provided with one first notch section
17, the L-shaped anode input pin 8 and 9 respective wafer support area of L-shaped cathode output pin, 111 middle both sides are provided with
One second notch section 18.
The angle number of degrees of 101 and first bending part 103 of above-mentioned horizontal connection portion are 115 °.
When using above-mentioned high intensity rectifier bridge device, increases external pin area and increase body edges epoxy intensity
It acts on, increase the intensity of edge epoxy and reduces structural stress and reduce epoxy injecting glue in the process to internal structural impact power
Effect；Again, it by the product structure of optimization, realizes and encapsulates bigger chip size in smaller product design size
Design requirement, maximum chip size increase to 88mil by 60mil, solve the problems, such as the structural stress that large size chip is brought, real
Product thickness is showed and has been reduced in size to original 40% or so, process efficiency improves 1 times or more.
Above-described embodiment is only the technical concepts and features for illustrating the utility model, and its object is to allow be familiar with technique
Personage can understand the content of the utility model and implement according to this, the scope of protection of the utility model can not be limited with this.
It is all according to equivalent change or modification made by the spirit of the present invention essence, should all cover the scope of protection of the utility model it
It is interior.
Claims (2)
1. a kind of high intensity rectifier bridge device, it is characterised in that：Including：By epoxy packages body（1）First diode core of cladding
Piece（2）, the second diode chip for backlight unit（3）, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）With expose epoxy packages body
（1）The first Z-shaped input pin（6）, the second Z-shaped input pin（7）, L-shaped anode input pin（8）Draw with the output of L-shaped cathode
Foot（9）；
First diode chip for backlight unit（2）, the second diode chip for backlight unit（3）Respective anode and L-shaped anode input pin（8）Upper surface electricity
Connection, third diode chip for backlight unit（4）, the 4th diode chip for backlight unit（5）Respective cathode and L-shaped cathode output pin（9）Upper surface
Electrical connection, the first diode chip for backlight unit（2）Cathode, the 4th diode chip for backlight unit（5）Anode pass through the first connection sheet（14）With
First Z-shaped input pin（6）Electrical connection, the second diode chip for backlight unit（3）Cathode, third diode chip for backlight unit（4）Anode it is logical
Cross the second connection sheet（15）With the second Z-shaped input pin（7）Electrical connection；
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）By wafer support area（111）, direct current output draws
Foot（112）With positioned at wafer support area（111）, direct current output lead portion（112）Between the second bending part（113）Composition；
First connection sheet（14）, the second connection sheet（15）Both sides are provided with one first semicircle orifice at respective center（16）,
The L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）Outside is provided with one
One notch section（17）, the L-shaped anode input pin（8）With L-shaped cathode output pin（9）Respective wafer support area（111）
Middle both sides are provided with one second notch section（18）.
2. high intensity rectifier bridge device according to claim 1, it is characterised in that：The first Z-shaped input pin（6）、
Second Z-shaped input pin（7）By horizontal connection portion（101）, horizontal input pin portion（102）With positioned at horizontal connection portion
（101）, horizontal input pin portion（102）Between the first bending part（103）Composition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721443090.7U CN207781591U (en) | 2017-10-31 | 2017-10-31 | High intensity rectifier bridge device |
| PCT/CN2018/087757 WO2019085442A1 (en) | 2017-10-31 | 2018-05-22 | High-strength rectifier bridge device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721443090.7U CN207781591U (en) | 2017-10-31 | 2017-10-31 | High intensity rectifier bridge device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207781591U true CN207781591U (en) | 2018-08-28 |
Family
ID=63232860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721443090.7U Active CN207781591U (en) | 2017-10-31 | 2017-10-31 | High intensity rectifier bridge device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN207781591U (en) |
| WO (1) | WO2019085442A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265366A (en) * | 2019-06-14 | 2019-09-20 | 山东元捷电子科技有限公司 | A kind of bridge heap diode with high-cooling property |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2545706Y (en) * | 2002-03-29 | 2003-04-16 | 苏州固锝电子有限公司 | Sheet type miniature bridge stack |
| CN201181702Y (en) * | 2008-04-18 | 2009-01-14 | 苏州固锝电子股份有限公司 | Thin soldering type commutation bridge stack |
| US8345400B2 (en) * | 2010-08-17 | 2013-01-01 | Lutron Electronics Co., Inc. | Surge suppression circuit for a load control device |
| CN102842572A (en) * | 2011-06-24 | 2012-12-26 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
| CN102790044B (en) * | 2012-07-06 | 2015-07-15 | 广东良得光电科技有限公司 | Ultrathin full-wave rectifier |
| CN102931174B (en) * | 2012-10-30 | 2015-03-25 | 南通康比电子有限公司 | Miniature type surface mounting single-phase full-wave bridge rectifier and manufacturing method of rectifier |
-
2017
- 2017-10-31 CN CN201721443090.7U patent/CN207781591U/en active Active
-
2018
- 2018-05-22 WO PCT/CN2018/087757 patent/WO2019085442A1/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265366A (en) * | 2019-06-14 | 2019-09-20 | 山东元捷电子科技有限公司 | A kind of bridge heap diode with high-cooling property |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019085442A1 (en) | 2019-05-09 |
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