CN2545706Y - Sheet type miniature bridge stack - Google Patents
Sheet type miniature bridge stack Download PDFInfo
- Publication number
- CN2545706Y CN2545706Y CN02219702U CN02219702U CN2545706Y CN 2545706 Y CN2545706 Y CN 2545706Y CN 02219702 U CN02219702 U CN 02219702U CN 02219702 U CN02219702 U CN 02219702U CN 2545706 Y CN2545706 Y CN 2545706Y
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- Prior art keywords
- junction
- chip
- chips
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- brace
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- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Abstract
The utility model provides a sheet type miniature bridge. A bridge rectifier is formed by four rectifier diodes in a packaging body. The four rectifier diodes consist of four same PN junction chips which are a D1, a D2, a D3 and a D4. Two of the four PN junction chips are juxtaposed on the top and the other two of the four PN junction chips are juxtaposed at the bottom. The P-area and the N-area of each PN junction chip are arranged from top to bottom. The P-area and the N-area of the angular position PN junction chip are arranged in the same position. Two overlapped PN junction chips are connected with each other by a connection lug. The two PN junction chips which are juxtaposed on the top and the other two PN junction chips which are juxtaposed at the bottom are respectively connected by another connection lug. Two connection lugs in a middle layer are regarded as a group of electrode terminal. Two connection lugs in an upper layer and in a lower layer are regarded as another group of electrode terminal and are respectively fetched out from the packaging body, so a miniature five-layer rectifier bridge structure is formed. The utility model is characterized in that the bulk is small; only one chip is needed, so the uniformity of variety is good; the process is simple; the cost is low and the qualification rate is high. The utility model has much better market potential.
Description
Technical field
The utility model relates to a kind of bridge rectifier, is specifically related to a kind of micro semiconductor rectifier bridge heap that adopts four chips to connect by single phase bridge type rectifier circu.
Background technology
Along with scientific and technological progress, bridge rectifier just develops towards microminiaturized direction as a kind of electronic devices and components.People have done a lot of research and discoveries in this respect.Chinese patent discloses a name on November 4th, 1998 and has been called " miniature semiconductor rectifier bridge and method for making thereof ", and number of patent application is 97104255.1, and publication number is the application for a patent for invention case of CN1197989A.This patent application discloses a kind of miniature semiconductor rectifier bridge, particular content comprises two diode crystal grain that have the N type altogether and the two diode crystal grain that have the P type altogether, wherein, altogether a p type island region of N type crystal grain together a corresponding N type fauna of P type crystal grain be connected to a terminal electrode of first group of lead frame, altogether another p type island region of N type crystal grain then together another N type district of P type crystal grain be connected to the another terminal electrode of first group of lead frame, and the N type district of the common N type crystal grain p type island region of P type crystal grain together then is connected to the two-terminal electrode of second group of lead frame respectively, thereby constitutes a bridge rectifier.Although this miniature rectifier structurally helps microminiaturization, make the double diode chip that needs to adopt two kinds, i.e. N type double diode chip and P type double diode chip altogether altogether.Therefore, the not shortcoming of being brought is: 1, the acp chip unit is wide in variety, and process complexity increases.2, the chip qualification rate is relatively low.3, owing to exist two chip kind uniformities relatively poor.4, the chip of P type substrate relatively difficulty do.For this reason, the utility model has designed a kind of volume micro semiconductor rectifier bridge heap little, simple in structure, to overcome above-mentioned deficiency from adopting the angle of four same kind chips.
Summary of the invention
For achieving the above object, the technical solution adopted in the utility model is: a kind of plate mini-type bridge heap, in a packaging body, form bridge rectifier by four rectifier diodes, described four rectifier diodes are by identical PN junction chip D1, D2, D3, D4 constitutes, four PN junction chips in the space two and be listed in, two and be listed in down in addition, the p type island region of each PN junction chip and N type district arrange up and down, wherein the p type island region of diagonal position PN junction chip is identical with orientation, N type district, adopt a connecting piece to connect between two PN junction chips repeatedly putting up and down respectively, and be listed in and be listed under two PN junction chips adopt another brace to be connected respectively, two braces on the intermediate layer are as one group of electrode terminal, two braces on the upper and lower are organized electrode terminal as another, and in packaging body, draw respectively, constitute the laminated bridge pile structure that the space is tightened with this.
Related content and structural change are explained as follows in the technique scheme:
1, described " identical PN junction chip " is meant the chip that kind, specifications and characteristics are all the same.The described upper and lower, left and right of this programme are with reference to the orientation in the institute's accompanying drawing that provides diagram, if rotation accompanying drawing direction, upper and lower, left and right should change and explain.So this programme is convenient to understand in order to contrast accompanying drawing to being described with reference to the accompanying drawing orientation on the one hand, on the other hand in order accurately to explain space structure and annexation thereof.Described " two braces on the intermediate layer " refer to up and down the brace between two PN junction chips, and " two braces of the upper and lower " refer to the brace of connection two PN junction chips arranged side by side up and down.
2, in the technique scheme, according to the bridge rectifier principle, four PN junction chips can be arranged to two kinds of forms by p type island region and orientation, N type district, four schemes:
(1), first kind of form is: the p type island region of four PN junction chips is identical with the orientation of N type district in the space.Wherein,
Scheme one: see shown in Figure 4ly, the p type island region of four PN junction chips is last, and N type district is down.At this moment, two middle braces are ac input end, and last brace is the direct current output negative pole, and following brace is the direct current output cathode.
Scheme two: see shown in Figure 5ly, the N type district of four PN junction chips is last, and p type island region is down.At this moment, two middle braces are ac input end, and last brace is opposite with scheme one with following brace polarity.
(2), second kind of form is: the p type island region of different diagonal position PN junction chips and the N type district orientation in the space is opposite.Wherein,
Scheme three: see shown in Figure 6ly, the p type island region of the PN junction chip of upper left and bottom right is last, and N type district is down; The N type district of lower-left and upper right PN junction chip is last, and p type island region is down.At this moment, two braces are ac input end up and down, and the brace on the middle left side is the direct current output cathode, and the brace on the right is the direct current output negative pole.
Scheme four: see shown in Figure 7, upper left and bottom right the N type district of PN junction chip last, p type island region is down; The p type island region of lower-left and upper right PN junction chip is last, and N type district is down.At this moment, two braces are ac input end up and down, and two middle brace polarity are opposite with scheme three.
3, in the technique scheme, in order to connect needs, between each brace and PN junction chip, all be connected by scolder.
4, in the technique scheme, described PN junction chip can adopt square structure, also can adopt circular configuration, even other shape.
5, in the technique scheme, the passivation layer on the described PN junction chip can adopt glass or silicon dioxide passivation layer, also can adopt the silicon rubber passivation layer.
The utility model technological core is: adopt four identical PN junction chips repeatedly to put into miniature five layers bridge pile structure in the space with four braces.
Because the technique scheme utilization, the utility model compared with prior art has following advantage:
1, the utility model adopts four identical PN junction chips and brace to connect into miniature five layers bridge pile structure, and its bulk volume only is: 4.7 * 3.8 * 2.5mm
3Overcome conventional art prejudice in the past---said in the CN1197989A application for a patent for invention, " bridge rectifier manufacture method that only should routine must connect four silicon diodes with electrode row encapsulation again; it is tiny that its volume can't be shortened into; can't meet the demand of electronic product; and its processing procedure complexity, yields is difficult for promoting ".
2, the kind of the utility model chip only need be a kind of, and uniformity improves greatly.
3, the utility model chip qualification rate is higher relatively.
4, when the utility model adopts N type substrate chip, there is not the chip of P type substrate, can reduce technology difficulty from making.
Description of drawings
Accompanying drawing 1 is the miniature rectifier bridge heap of a utility model embodiment stereogram;
Accompanying drawing 3 is the miniature rectifier bridge heap of a utility model example structure schematic diagram;
Accompanying drawing 4 is the schematic diagram of the utility model scheme one;
Accompanying drawing 5 is the schematic diagram of the utility model scheme two;
Accompanying drawing 6 is the schematic diagram of the utility model scheme three;
Accompanying drawing 7 is the schematic diagram of the utility model scheme four.
In the above accompanying drawing: 1, P brace; 2, scolder; 3, scolder; 4, lead wire; 5, scolder; 6, scolder; 7, epoxy resin; 8, N brace; 9, scolder; 10, scolder; 11, lead wire; 12, scolder; 13, scolder; D1～D4 is four PN junction chips.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described:
Embodiment: shown in accompanying drawing 1 and accompanying drawing 3, a kind of chip silicon spreads miniature rectifier bridge heap, in a packaging body, forms bridge rectifier by four rectifier diodes, and described four rectifier diodes are made of identical PN junction chip D1, D2, D3, D4.PN junction chip D4 and D2 are in the space and on being listed in, and D3 and D1 also are listed in down.The p type island region of four PN junction chip D1, D2, D3, D4 is last, and N type district is down.Put into a connecting piece between D4 and the D3, this brace is a lead wire 4, puts into another brace between D2 and the D1, and this brace is a lead wire 11, and D4 is connected by P brace 1 with the upper surface of D2, and D3 is connected by N brace 8 with the lower surface of D1.All be connected between described each brace and the PN junction chip by scolder, specifically: be connected with scolder 13 with scolder 2 respectively between P brace 1 and D4 and the D2, be connected with scolder 9 with scolder 6 respectively between N brace 8 and D3 and the D1, be connected with scolder 5 with scolder 3 respectively between lead wire 4 and D4 and the D3, be connected with scolder 10 with scolder 12 respectively between lead wire 11 and D2 and the D1.At this moment, lead wire 4 and lead wire 11 are ac input end, and P brace 1 is the direct current output negative pole, and N brace 8 is the direct current output cathode, and lead wire 4, lead wire 11, P brace 1 and N brace 8 are drawn in packaging body respectively.Described packaging body is an epoxy resin 7, and the PN junction chip is a square structure, adopts glass or silicon dioxide passivating structure on the PN junction chip, constitutes miniature five layers of rectifier bridge pile structure with this.
When assembling connects, welded together in advance with scolder and brace with a connecting piece the N profile of two chips wherein, this brace is a N brace 8, welded together in advance the P profile of other two chips on another brace with scolder and brace, this brace is a P brace 1, more than four chips when pre-welding, another side is also with scolder prewelding simultaneously.Before above-mentioned welding, the pin of P brace 1 and N brace 8 (with outer lead-,+coupling part) need to use the scolder prewelding.Again the lead-in wire consistency from top to bottom in N brace 8 and P brace 1 and the lead wire, the N brace of chip, P brace, the connection of the formation bridge rectifier welded together of the respective lead on the lead wire are arranged by formal electrode holder.
Claims (8)
1, a kind of plate mini-type bridge heap, in a packaging body, form bridge rectifier by four rectifier diodes, it is characterized in that: described four rectifier diodes are by identical PN junction chip [D1, D2, D3, D4] constitute, four PN junction chips in the space two and be listed in, two and be listed in down in addition, the p type island region of each PN junction chip and N type district arrange up and down, wherein the p type island region of diagonal position PN junction chip is identical with orientation, N type district, adopt a connecting piece to connect between two PN junction chips repeatedly putting up and down respectively, and be listed in and be listed under two PN junction chips adopt another brace to be connected respectively, two braces on the intermediate layer are as one group of electrode terminal, two braces on the upper and lower are organized electrode terminal as another, and draw in packaging body respectively, constitute the laminated bridge pile structure that the space is tightened with this.
2, according to claim 1, it is characterized in that: the p type island region of described four PN junction chips is identical with the orientation of N type district in the space.
3, according to claim 1, it is characterized in that: the p type island region of described different diagonal position PN junction chips and the N type district orientation in the space is opposite.
4, according to claim 1, it is characterized in that: all be connected between described each brace and the PN junction chip by scolder.
5, according to claim 1, it is characterized in that: described PN junction chip is a square structure.
6, according to claim 1, it is characterized in that: described PN junction chip is a circular configuration.
7, according to claim 1, it is characterized in that: described PN junction chip is provided with glass or silicon dioxide passivation layer.
8, according to claim 1, it is characterized in that: described PN junction chip is provided with the silicon rubber passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02219702U CN2545706Y (en) | 2002-03-29 | 2002-03-29 | Sheet type miniature bridge stack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02219702U CN2545706Y (en) | 2002-03-29 | 2002-03-29 | Sheet type miniature bridge stack |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2545706Y true CN2545706Y (en) | 2003-04-16 |
Family
ID=33698135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN02219702U Expired - Lifetime CN2545706Y (en) | 2002-03-29 | 2002-03-29 | Sheet type miniature bridge stack |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2545706Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886759A (en) * | 2010-05-24 | 2010-11-17 | 晶科电子（广州）有限公司 | Light emitting device using alternating current and manufacturing method thereof |
| CN101373932B (en) * | 2007-08-25 | 2011-06-29 | 绍兴旭昌科技企业有限公司 | Miniature surface-pasted single-phase full wave bridge rectifier and manufacturing method thereof |
| CN102842572A (en) * | 2011-06-24 | 2012-12-26 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
| WO2019085442A1 (en) * | 2017-10-31 | 2019-05-09 | 苏州固锝电子股份有限公司 | High-strength rectifier bridge device |
-
2002
- 2002-03-29 CN CN02219702U patent/CN2545706Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373932B (en) * | 2007-08-25 | 2011-06-29 | 绍兴旭昌科技企业有限公司 | Miniature surface-pasted single-phase full wave bridge rectifier and manufacturing method thereof |
| CN101886759A (en) * | 2010-05-24 | 2010-11-17 | 晶科电子（广州）有限公司 | Light emitting device using alternating current and manufacturing method thereof |
| CN102842572A (en) * | 2011-06-24 | 2012-12-26 | 上海金克半导体设备有限公司 | Small double-row bridge rectifier |
| WO2019085442A1 (en) * | 2017-10-31 | 2019-05-09 | 苏州固锝电子股份有限公司 | High-strength rectifier bridge device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SUZHOU GUDE ELECTRONICS CO LTD Free format text: FORMER NAME OR ADDRESS: GUDE ELECTRONIC CO., LTD., SUZHOU |
|
| CP01 | Change in the name or title of a patent holder |
Patentee after: Gude Electronics Co., Ltd., Suzhou Patentee before: Gude Electronic Co., Ltd., Suzhou |
|
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20120329 Granted publication date: 20030416 |