CN205944074U - Promote heat dispersion's rectifier bridge device - Google Patents

Promote heat dispersion's rectifier bridge device Download PDF

Info

Publication number
CN205944074U
CN205944074U CN201620841539.4U CN201620841539U CN205944074U CN 205944074 U CN205944074 U CN 205944074U CN 201620841539 U CN201620841539 U CN 201620841539U CN 205944074 U CN205944074 U CN 205944074U
Authority
CN
China
Prior art keywords
connecting piece
shaped connecting
strip
input terminal
diode chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201620841539.4U
Other languages
Chinese (zh)
Inventor
张雄杰
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201620841539.4U priority Critical patent/CN205944074U/en
Application granted granted Critical
Publication of CN205944074U publication Critical patent/CN205944074U/en
Priority to PCT/CN2017/089462 priority patent/WO2018024042A1/en
Anticipated expiration legal-status Critical
Active legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires

Landscapes

  • Rectifiers (AREA)

Abstract

本实用新型一种提升散热性能的整流桥器件,包括:由环氧封装体包覆的第一、第二、第三、第四二极管芯片、第一L形连接片、第二L形连接片、第一条形连接片和第二条形连接片,第一、第二二极管芯片位于第一L形连接片的支撑区,第三、第四二极管芯片位于第二L形连接片的支撑区,第一条形连接片连接第一、第三二极管芯片,第二条形连接片连接第二、第四二极管芯片;正极输入端、负极输出端、第一交流输入端和第二交流输入端均裸露出环氧封装体外表面;所述环氧封装体具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片正上方。本实用新型整流桥器件局部减薄设计,兼顾了避免本体变形与节省环氧,本体局部减薄,有利于内部芯片散热。

The utility model relates to a rectifier bridge device for improving heat dissipation performance, comprising: first, second, third and fourth diode chips covered by an epoxy package body, a first L-shaped connecting piece, a second L-shaped The connecting piece, the first strip-shaped connecting piece and the second strip-shaped connecting piece, the first and second diode chips are located in the supporting area of the first L-shaped connecting piece, and the third and fourth diode chips are located in the second L-shaped connecting piece. The supporting area of the connecting strip, the first strip connecting strip connects the first and the third diode chip, the second strip connecting strip connects the second and the fourth diode chip; the positive input end, the negative output end, the first Both the first AC input end and the second AC input end expose the external surface of the epoxy package; the epoxy package has four recessed areas, and the four recessed areas are respectively located in the first, second, third, fourth and second The electrode chip is directly above. The partial thinning design of the rectifier bridge device of the utility model takes into account the avoidance of deformation of the body and the saving of epoxy, and the partial thinning of the main body is beneficial to heat dissipation of the internal chip.

Description

提升散热性能的整流桥器件Rectifier bridge device with improved thermal performance

技术领域technical field

本实用新型涉及一种整流半导体器件,尤其涉及一种防止短路的整流桥器件结构。The utility model relates to a rectifying semiconductor device, in particular to a rectifying bridge device structure for preventing short circuit.

背景技术Background technique

整流桥器件是由四个整流二极管组成的一个桥式结构,它利用二极管的单向导电特性对交流电进行整流,由于桥式整流器对输入正正弦波的利用效率比波整流高一倍,是对二极管半波整流的一种显著改进,故被广泛应用于交流电转换成直流电的电路中。The rectifier bridge device is a bridge structure composed of four rectifier diodes. It uses the unidirectional conduction characteristics of the diodes to rectify the alternating current. Since the utilization efficiency of the bridge rectifier for the input sine wave is twice that of the wave rectification, it is suitable for A significant improvement of diode half-wave rectification, it is widely used in circuits that convert alternating current to direct current.

现有整流桥器件结构对于大尺寸产品,本体厚度太薄时容易发生变形,本体厚度太厚时环氧浪费严重本体太厚时,不利于芯片散热。For large-sized products in the existing rectifier bridge device structure, when the body thickness is too thin, it is easy to deform, and when the body thickness is too thick, epoxy waste is serious. When the body is too thick, it is not conducive to chip heat dissipation.

发明内容Contents of the invention

本实用新型目的是提供一种防止短路的整流桥器件结构,该防止短路的整流桥器件结构其实现在紧凑型产品中,不减小散热片面积的基础上,有效的增加了引脚爬电距离,增加了产品本体散热面积,提高了器件的可靠性和安全性。The purpose of the utility model is to provide a rectifier bridge device structure for preventing short circuit. The rectifier bridge device structure for preventing short circuit can be implemented in a compact product, and effectively increases the pin creepage distance without reducing the area of the heat sink. , which increases the heat dissipation area of the product body and improves the reliability and safety of the device.

为达到上述目的,本实用新型采用的技术方案是:一种提升散热性能的整流桥器件,包括:由环氧封装体包覆的第一、第二、第三、第四二极管芯片、第一L形连接片、第二L形连接片、第一条形连接片和第二条形连接片,第一、第二二极管芯片位于第一L形连接片的支撑区,第三、第四二极管芯片位于第二L形连接片的支撑区,第一条形连接片连接第一、第三二极管芯片,第二条形连接片连接第二、第四二极管芯片;In order to achieve the above purpose, the technical solution adopted by the utility model is: a rectifier bridge device for improving heat dissipation performance, including: first, second, third and fourth diode chips covered by an epoxy package, The first L-shaped connecting piece, the second L-shaped connecting piece, the first strip-shaped connecting piece and the second strip-shaped connecting piece, the first and second diode chips are located in the support area of the first L-shaped connecting piece, and the third , The fourth diode chip is located in the supporting area of the second L-shaped connecting piece, the first strip-shaped connecting piece is connected to the first and third diode chips, and the second strip-shaped connecting piece is connected to the second and fourth diodes chip;

位于第一L形连接片、第二L形连接片、第一条形连接片和第二条形连接片各自末端的引脚区分别作为正极输入端、负极输出端、第一交流输入端和第二交流输入端,此正极输入端、负极输出端、第一交流输入端和第二交流输入端均裸露出环氧封装体外表面;所述环氧封装体具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片正上方。The pin areas located at the respective ends of the first L-shaped connecting piece, the second L-shaped connecting piece, the first strip-shaped connecting piece and the second strip-shaped connecting piece are respectively used as positive input terminals, negative output terminals, first AC input terminals and The second AC input terminal, the positive input terminal, the negative output terminal, the first AC input terminal and the second AC input terminal are all exposed on the outer surface of the epoxy package; the epoxy package has four recessed areas, the four The recessed regions are respectively located directly above the first, second, third and fourth diode chips.

上述技术方案中进一步改进的方案如下:The scheme of further improvement in above-mentioned technical scheme is as follows:

上述方案中,所述第一交流输入端、第二交流输入端位于正极输入端和负极输出端之间。In the above solution, the first AC input terminal and the second AC input terminal are located between the positive input terminal and the negative output terminal.

由于上述技术方案运用,本实用新型与现有技术相比具有下列优点和效果:Due to the application of the above-mentioned technical solutions, the utility model has the following advantages and effects compared with the prior art:

本实用新型提升散热性能的整流桥器件,其环氧封装体具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片正上方,本体局部减薄设计,兼顾了避免本体变形与节省环氧,本体局部减薄,有利于内部芯片散热。The utility model improves the heat dissipation performance of the rectifier bridge device, and its epoxy package body has four recessed areas, and the four recessed areas are respectively located directly above the first, second, third, and fourth diode chips, and the body is partially reduced. The thin design takes into account the avoidance of deformation of the body and the saving of epoxy, and the local thinning of the body is conducive to the heat dissipation of the internal chip.

附图说明Description of drawings

附图1为现有整流桥器件结构示意图一;Accompanying drawing 1 is the structure schematic diagram one of existing rectifier bridge device;

附图2为现有整流桥器件结构示意图二;Accompanying drawing 2 is the structure schematic diagram II of existing rectifier bridge device;

附图3为本实用新型提升散热性能的整流桥器件结构示意图一;Accompanying drawing 3 is a structural schematic diagram of a rectifier bridge device that improves heat dissipation performance of the present invention;

附图4为本实用新型提升散热性能的整流桥器件结构示意图二;Accompanying drawing 4 is the rectifier bridge device structure schematic diagram two that the utility model improves heat dissipation performance;

附图5为本实用新型提升散热性能的整流桥器件结构示意图三。Accompanying drawing 5 is the structural schematic diagram III of the rectifier bridge device of the utility model to improve the heat dissipation performance.

以上附图中:1、环氧封装体;2、第一二极管芯片;3、第二二极管芯片;4、第三二极管芯片;5、第四二极管芯片;6、第一L形连接片;61、正极输入端;7、第二L形连接片;71、负极输出端;8、第一条形连接片;81、第一交流输入端;9、第二条形连接片;9、第二交流输入端;10、凹陷区。In the above drawings: 1. Epoxy package; 2. The first diode chip; 3. The second diode chip; 4. The third diode chip; 5. The fourth diode chip; 6. The first L-shaped connecting piece; 61, the positive input terminal; 7, the second L-shaped connecting piece; 71, the negative output terminal; 8, the first bar-shaped connecting piece; 81, the first AC input terminal; 9, the second piece Shaped connecting piece; 9, the second AC input end; 10, the recessed area.

具体实施方式detailed description

下面结合附图及实施例对本实用新型作进一步描述:Below in conjunction with accompanying drawing and embodiment the utility model is further described:

实施例1:一种提升散热性能的整流桥器件,包括:由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5、第一L形连接片6、第二L形连接片7、第一条形连接片8和第二条形连接片9,第一、第二二极管芯片2、3位于第一L形连接片6的支撑区,第三、第四二极管芯片4、5位于第二L形连接片7的支撑区,第一条形连接片8连接第一、第三二极管芯片2、4,第二条形连接片9连接第二、第四二极管芯片3、5;Embodiment 1: A rectifier bridge device that improves heat dissipation performance, including: first, second, third, fourth diode chips 2, 3, 4, 5, first L-shaped connecting piece 6, the second L-shaped connecting piece 7, the first strip-shaped connecting piece 8 and the second strip-shaped connecting piece 9, the first and second diode chips 2, 3 are located on the first L-shaped connecting piece 6 The supporting area of the third and fourth diode chips 4,5 is located in the supporting area of the second L-shaped connecting sheet 7, the first strip-shaped connecting sheet 8 is connected to the first and third diode chips 2,4, and the first strip-shaped connecting sheet 8 is connected to the first and third diode chips 2,4. Two strip-shaped connecting pieces 9 are connected to the second and fourth diode chips 3, 5;

位于第一L形连接片6、第二L形连接片7、第一条形连接片8和第二条形连接片9各自末端的引脚区分别作为正极输入端61、负极输出端71、第一交流输入端81和第二交流输入端91,此正极输入端61、负极输出端71、第一交流输入端81和第二交流输入端82均裸露出环氧封装体1外表面;所述环氧封装体1具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片2、3、4、5正上方。The pin areas at the respective ends of the first L-shaped connecting piece 6, the second L-shaped connecting piece 7, the first strip-shaped connecting piece 8 and the second strip-shaped connecting piece 9 are respectively used as positive input terminal 61, negative output terminal 71, The first AC input terminal 81 and the second AC input terminal 91, the positive input terminal 61, the negative output terminal 71, the first AC input terminal 81 and the second AC input terminal 82 are all exposed on the outer surface of the epoxy package 1; The epoxy package 1 has four recessed areas, and the four recessed areas are respectively located directly above the first, second, third, and fourth diode chips 2 , 3 , 4 , and 5 .

实施例2:一种提升散热性能的整流桥器件,包括:由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5、第一L形连接片6、第二L形连接片7、第一条形连接片8和第二条形连接片9,第一、第二二极管芯片2、3位于第一L形连接片6的支撑区,第三、第四二极管芯片4、5位于第二L形连接片7的支撑区,第一条形连接片8连接第一、第三二极管芯片2、4,第二条形连接片9连接第二、第四二极管芯片3、5;Embodiment 2: A rectifier bridge device that improves heat dissipation performance, including: first, second, third, fourth diode chips 2, 3, 4, 5, first L-shaped connecting piece 6, the second L-shaped connecting piece 7, the first strip-shaped connecting piece 8 and the second strip-shaped connecting piece 9, the first and second diode chips 2, 3 are located on the first L-shaped connecting piece 6 The supporting area of the third and fourth diode chips 4,5 is located in the supporting area of the second L-shaped connecting sheet 7, the first strip-shaped connecting sheet 8 is connected to the first and third diode chips 2,4, and the first strip-shaped connecting sheet 8 is connected to the first and third diode chips 2,4. Two strip-shaped connecting pieces 9 are connected to the second and fourth diode chips 3, 5;

位于第一L形连接片6、第二L形连接片7、第一条形连接片8和第二条形连接片9各自末端的引脚区分别作为正极输入端61、负极输出端71、第一交流输入端81和第二交流输入端91,此正极输入端61、负极输出端71、第一交流输入端81和第二交流输入端82均裸露出环氧封装体1外表面;所述环氧封装体1具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片2、3、4、5正上方。The pin areas at the respective ends of the first L-shaped connecting piece 6, the second L-shaped connecting piece 7, the first strip-shaped connecting piece 8 and the second strip-shaped connecting piece 9 are respectively used as positive input terminal 61, negative output terminal 71, The first AC input terminal 81 and the second AC input terminal 91, the positive input terminal 61, the negative output terminal 71, the first AC input terminal 81 and the second AC input terminal 82 are all exposed on the outer surface of the epoxy package 1; The epoxy package 1 has four recessed areas, and the four recessed areas are respectively located directly above the first, second, third, and fourth diode chips 2 , 3 , 4 , and 5 .

上述第一交流输入端81、第二交流输入端91位于正极输入端61和负极输出端71之间。The first AC input end 81 and the second AC input end 91 are located between the positive input end 61 and the negative output end 71 .

采用上述提升散热性能的整流桥器件时,其环氧封装体具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片正上方,本体局部减薄设计,兼顾了避免本体变形与节省环氧,本体局部减薄,有利于内部芯片散热。When the rectifier bridge device with improved heat dissipation performance is used, its epoxy package has four recessed areas, and the four recessed areas are respectively located directly above the first, second, third, and fourth diode chips, and the body is partially reduced. The thin design takes into account the avoidance of deformation of the body and the saving of epoxy, and the local thinning of the body is conducive to the heat dissipation of the internal chip.

上述实施例只为说明本实用新型的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施,并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰,都应涵盖在本实用新型的保护范围之内。The above-mentioned embodiments are only to illustrate the technical concept and characteristics of the present utility model, and its purpose is to enable those familiar with this technology to understand the content of the present utility model and implement it accordingly, and not to limit the protection scope of the present utility model. All equivalent changes or modifications made according to the spirit of the utility model shall fall within the protection scope of the utility model.

Claims (2)

1.一种提升散热性能的整流桥器件,其特征在于:包括:由环氧封装体(1)包覆的第一、第二、第三、第四二极管芯片(2、3、4、5)、第一L形连接片(6)、第二L形连接片(7)、第一条形连接片(8)和第二条形连接片(9),第一、第二二极管芯片(2、3)位于第一L形连接片(6)的支撑区,第三、第四二极管芯片(4、5)位于第二L形连接片(7)的支撑区,第一条形连接片(8)连接第一、第三二极管芯片(2、4),第二条形连接片(9)连接第二、第四二极管芯片(3、5);1. A rectifier bridge device for improving heat dissipation, characterized in that: comprising: first, second, third and fourth diode chips (2, 3, 4) covered by an epoxy package (1) , 5), the first L-shaped connecting piece (6), the second L-shaped connecting piece (7), the first strip-shaped connecting piece (8) and the second strip-shaped connecting piece (9), the first, second and second The pole tube chips (2, 3) are located in the supporting area of the first L-shaped connecting piece (6), and the third and fourth diode chips (4, 5) are located in the supporting area of the second L-shaped connecting piece (7), The first strip-shaped connecting piece (8) is connected to the first and third diode chips (2, 4), and the second strip-shaped connecting piece (9) is connected to the second and fourth diode chips (3, 5); 位于第一L形连接片(6)、第二L形连接片(7)、第一条形连接片(8)和第二条形连接片(9)各自末端的引脚区分别作为正极输入端(61)、负极输出端(71)、第一交流输入端(81)和第二交流输入端(91),此正极输入端(61)、负极输出端(71)、第一交流输入端(81)和第二交流输入端(82)均裸露出环氧封装体(1)外表面;所述环氧封装体(1)具有四个凹陷区,此四个凹陷区分别位于第一、第二、第三、第四二极管芯片(2、3、4、5)正上方。The pin areas at the respective ends of the first L-shaped connecting piece (6), the second L-shaped connecting piece (7), the first strip-shaped connecting piece (8) and the second strip-shaped connecting piece (9) are respectively used as positive input Terminal (61), negative output terminal (71), first AC input terminal (81) and second AC input terminal (91), the positive input terminal (61), negative output terminal (71), first AC input terminal (81) and the second AC input end (82) both expose the outer surface of the epoxy package (1); the epoxy package (1) has four recessed areas, and these four recessed areas are respectively located in the first, The second, third, and fourth diode chips (2, 3, 4, 5) are directly above. 2.根据权利要求1所述的提升散热性能的整流桥器件,其特征在于:所述第一交流输入端(81)、第二交流输入端(91)位于正极输入端(61)和负极输出端(71)之间。2. The rectifier bridge device for improving heat dissipation performance according to claim 1, characterized in that: the first AC input terminal (81) and the second AC input terminal (91) are located at the positive input terminal (61) and the negative output end (71).
CN201620841539.4U 2016-08-05 2016-08-05 Promote heat dispersion's rectifier bridge device Active CN205944074U (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201620841539.4U CN205944074U (en) 2016-08-05 2016-08-05 Promote heat dispersion's rectifier bridge device
PCT/CN2017/089462 WO2018024042A1 (en) 2016-08-05 2017-06-22 Bridge rectifier device having enhanced heat dissipation performance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620841539.4U CN205944074U (en) 2016-08-05 2016-08-05 Promote heat dispersion's rectifier bridge device

Publications (1)

Publication Number Publication Date
CN205944074U true CN205944074U (en) 2017-02-08

Family

ID=57921833

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201620841539.4U Active CN205944074U (en) 2016-08-05 2016-08-05 Promote heat dispersion's rectifier bridge device

Country Status (2)

Country Link
CN (1) CN205944074U (en)
WO (1) WO2018024042A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018024042A1 (en) * 2016-08-05 2018-02-08 苏州固锝电子股份有限公司 Bridge rectifier device having enhanced heat dissipation performance

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109065523B (en) * 2018-07-26 2024-04-26 苏州固锝电子股份有限公司 Rectifier chip packaging structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201655799U (en) * 2010-04-28 2010-11-24 苏州固锝电子股份有限公司 Thin type bridge rectifier with pin structure
CN102832207A (en) * 2011-06-15 2012-12-19 上海金克半导体设备有限公司 Block bridge pile
CN202261057U (en) * 2011-10-14 2012-05-30 上海美高森美半导体有限公司 Single-in-line three-phase rectifier bridge
CN205944074U (en) * 2016-08-05 2017-02-08 苏州固锝电子股份有限公司 Promote heat dispersion's rectifier bridge device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018024042A1 (en) * 2016-08-05 2018-02-08 苏州固锝电子股份有限公司 Bridge rectifier device having enhanced heat dissipation performance

Also Published As

Publication number Publication date
WO2018024042A1 (en) 2018-02-08

Similar Documents

Publication Publication Date Title
CN107887352B (en) Convenient for the rectifying device of heat dissipation
CN207781586U (en) Rectifying bridge type semiconductor devices
CN107393884A (en) A kind of compression joint type IGBT module stacked wafer module and compression joint type IGBT module internal enclosing structure
CN201479030U (en) Thin Three-Phase Bridge Rectifier
WO2018024042A1 (en) Bridge rectifier device having enhanced heat dissipation performance
CN207781590U (en) High reliability compact rectifier bridge structure
CN103779341B (en) A kind of high-power half bridge module
CN205911308U (en) Compact design type rectifier bridge structure
CN207781591U (en) High intensity rectifier bridge device
CN204029796U (en) A kind of single-phase rectification bridge
CN205680671U (en) Heat radiating fin structure Ultrathin surface-mount rectifier bridge device
CN108878410A (en) Mounted type rectified semiconductor device
CN205944081U (en) High -power rectifier bridge structure
CN204966489U (en) SMD rectifier of ultra -thin type
CN109727938A (en) Rectifying bridge type semiconductor devices
CN205609501U (en) High coefficient of heat conductivity rectification semiconductor device
CN106449586A (en) High-power rectifying bridge structure
CN102420219A (en) Discrete semiconductor paster ultrathin rectifier
CN207199600U (en) High reliability rectified semiconductor device
CN204966488U (en) High coefficient of heat conductivity's ultra -thin subsides dress rectifying device
CN205723499U (en) Antisurge type surface mount semiconductor device
CN203774337U (en) High-power rectifying device
CN201655795U (en) A Thin Bridge Rectifier Applied to Circuit Board
CN106449536A (en) Anti-surge surface mounting semiconductor device
CN212136440U (en) Ultra-thin miniature bridge stack semiconductor device

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant