CN205029932U - Led driver and led lamp - Google Patents
Led driver and led lamp Download PDFInfo
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- CN205029932U CN205029932U CN201520771208.3U CN201520771208U CN205029932U CN 205029932 U CN205029932 U CN 205029932U CN 201520771208 U CN201520771208 U CN 201520771208U CN 205029932 U CN205029932 U CN 205029932U
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- control unit
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- gallium nitride
- led driver
- circuit
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Abstract
The utility model provides a LED driver and LED lamp, include: the control unit and power unit, the control unit with power unit adopts electrical connection, power unit adopts gallium nitride field effect transistor wafer, the control unit is used for producing the control signal that minimum frequency of operation is greater than the 250K hertz, power unit is used for the control unit's control converts the alternating voltage of input to LED required DC voltage down. Through adopting gallium nitride MOSFET as power unit, the high frequency switching signal who cooperates the control unit to produce, reduction stray inductance to this gallium nitride MOSFET's interference and loss are less, and the switching speed is very fast, effectively improve the work efficiency of this LED driver.
Description
Technical field
The utility model embodiment relates to circuit field, particularly relates to a kind of light-emitting diode (LightEmittingDiode, LED) driver and LED.
Background technology
Traditional changes (AlternatingCurrent-directCurrent, AC-DC) (90-264V for AC-DC
aC) LED driver use power cell be silicon high-voltage mos field effect transistor (MetalOxideSemiconductorFieldEffectTransistor, MOSFET), because the device parasitic parameter of this silicon high-voltage MOSFET pipe is large, conducting resistance is large, the problems such as the large and switching speed of interference is slower, cause the operating efficiency of LED driver lower.
Utility model content
The LED driver that the utility model embodiment provides and LED, the problems such as large for the device parasitic parameter solved due to this silicon high-voltage MOSFET pipe, conducting resistance is large, and the large and switching speed of interference is slower, cause the problem that the operating efficiency of LED driver is lower.
The utility model first aspect provides a kind of LED driver, comprising: control unit and power cell; Described control unit and described power cell adopt and are electrically connected; Described power cell adopts gallium nitride FET wafer; Described control unit is greater than the control signal of 250K hertz for generation of minimum frequency of operation; Described power cell is used for converting the alternating voltage of input to direct voltage needed for LED under the control of described control unit.
In an embodiment of the present utility model, described LED driver also comprises: base plate for packaging or slide holder; Described control unit and described gallium nitride FET wafer are fixed on described base plate for packaging or described slide holder; Described control unit and described gallium nitride FET wafer need external electric point to be connected with the pin of described base plate for packaging or described slide holder respectively, and described control unit and described gallium nitride FET wafer are encapsulated at described base plate for packaging or described slide holder by capsulation material.
In an embodiment of the present utility model, described electric point comprises the grid of described gallium nitride FET wafer, source electrode and drain electrode; The port that grid and the described control unit of described gallium nitride FET wafer export control signal is connected; The source electrode of described gallium nitride FET wafer and ground connection; The drain electrode of described gallium nitride FET wafer is connected with the positive pole of described LED to be driven.
In an embodiment of the present utility model, described LED driver is applied to buck circuit, boost chopper, the two-way chopper circuit of buck-boost, inverse-excitation type DC converting circuit, allows output voltage to be greater than, to be less than or equal to the direct current conversion SEPIC circuit of input voltage, positive activation type DC converting circuit or half-bridge circuit.
The utility model second aspect provides a kind of LED, comprising: power supply circuits, drive circuit and at least one LED; Described power supply circuits are connected with the input of described drive circuit; The output of described drive circuit is connected with at least one LED described; Wherein, described drive circuit comprises the LED driver described in any one of first aspect.
The LED driver that the utility model provides and LED, comprise the power cell and control unit that adopt gallium nitride FET wafer, the alternating voltage of input is converted to the direct voltage that LED needs by power cell under the control of the control unit, by adopting gallium nitride MOSFET as power cell, under high-frequency work state, disturb, loss is less and switching speed very fast, effectively improve the operating efficiency of this LED driver.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the principle schematic of the utility model LED driver embodiment one;
Fig. 2 is the principle schematic that the utility model LED driver is applied to buck circuit;
Fig. 3 is the principle schematic that the utility model LED driver is applied to the two-way chopper circuit of buck-boost;
Fig. 4 is the principle schematic that the utility model LED driver is applied to boost chopper;
Fig. 5 is the principle schematic that the utility model LED driver is applied to inverse-excitation type DC converting circuit;
Fig. 6 is the principle schematic that the utility model LED driver is applied to another kind of inverse-excitation type DC converting circuit;
Fig. 7 is the structural representation of the utility model LED.
Embodiment
For making the object of the utility model embodiment, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the utility model embodiment, technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Fig. 1 is the principle schematic of the utility model LED driver embodiment one; As shown in Figure 1, the LED driver that the utility model provides comprises: control unit 11 and power cell 12; Described control unit 11 adopts with described power cell 12 and is electrically connected; Described power cell 12 adopts gallium nitride FET wafer; Described control unit 11 is greater than the control signal of 250K hertz for generation of minimum frequency of operation; Described power cell 12 for converting the direct voltage needed for LED under the control of described control unit 11 by the alternating voltage of input.
In the present embodiment, LED driver described in this also comprises except control unit 11 and power cell 12: base plate for packaging 13 or slide holder, the effect of this base plate for packaging 13 can the effect of slide holder similar, select a kind of according to the actual requirements; Described control unit 11 and described gallium nitride FET wafer are fixed on described base plate for packaging 13 or described slide holder; Described control unit 11 and described gallium nitride FET wafer need external electric point 14 to be connected with the pin 15 of described base plate for packaging 13 or described slide holder respectively, and described control unit 11 and described gallium nitride FET wafer are encapsulated at described base plate for packaging 13 or described slide holder by capsulation material 16.
As shown in Figure 1, a kind of structural representation of integrated circuit (integratedcircuit, IC) of LED driver is shown.This LED driver is used for power transfer, alternating voltage is converted to the direct voltage needed for LED, and the described control unit 11 of this IC produces the switch controlling signal that minimum frequency of operation is greater than 250KHZ, and described power cell 12 is gallium nitride MOSFET wafer.Described control unit 11 and gallium nitride MOSFET wafer are separately fixed on the slide holder of base plate for packaging 13 or band pin frame chip, control unit 11 is connected by wires such as gold thread, copper cash, solder or aluminum steels with the electric point 14 of gallium nitride MOSFET wafer, also be connected by wire with the pin on base plate for packaging 13 or slide holder, and the integrated circuit of different size is packaged into by capsulation material, wherein capsulation material 16 generally adopts resin.Wherein, electric point comprises the tie point of control unit 11 and three electrodes of gallium nitride MOSFET wafer, be respectively GATE end, SOURCE end and DRAIN end, i.e. grid, source electrode and drain electrode, the port that grid and the described control unit of described gallium nitride FET wafer export control signal is connected; The source electrode of described gallium nitride FET wafer and ground connection; The drain electrode of described gallium nitride FET wafer is connected with the positive pole of described LED to be driven.GATE end provides drive singal, and control unit detects outside feedback signal simultaneously, controls frequency and the duty ratio of drive singal, and SOURCE end is connected by wire with the pin on base plate for packaging or slide holder, for power transfer with DRAIN end.
The LED driver that the present embodiment provides, comprise the power cell and control unit that adopt gallium nitride FET wafer, the alternating voltage of input is converted to the direct voltage that LED needs by power cell under the control of the control unit, by adopting gallium nitride MOSFET as power cell, under high-frequency work state, disturb, loss is less and switching speed very fast, effectively improve the operating efficiency of this LED driver.
Fig. 2 is the principle schematic that the utility model LED driver is applied to buck circuit, as shown in Figure 2, by LED driver shown in above-mentioned Fig. 1, be applied in BUCK circuit, this circuit comprises the power supply circuits that power supply AC, electric capacity C1, C2, inductance L 1 and D form, and by resistance R1, R2, R3, R4, R5, R6, R7 and electric capacity C3, C4, inductance L 2, chopper circuit and multiple LED load of diode D1 and LED driver composition form complete LED.In IC in fig. 2, S represents source S ource, and D represents drain D rain.
Fig. 3 is the principle schematic that the utility model LED driver is applied to the two-way chopper circuit of buck-boost, as shown in Figure 3, by LED driver shown in above-mentioned Fig. 1, be applied in BUCKBOOST circuit, the principle of this circuit and Fig. 2 is similar, comprises power supply circuits, chopper circuit and multiple LED load and forms complete LED.In IC in figure 3, S represents source S ource, and D represents drain D rain.
Fig. 4 is the principle schematic that the utility model LED driver is applied to boost chopper, as shown in Figure 4, by LED driver shown in above-mentioned Fig. 1, be applied in BUCKBOOST circuit, the principle of this circuit and Fig. 2 is similar, comprises power supply circuits, chopper circuit and multiple LED load and forms complete LED.In IC in the diagram, S represents source S ource, and D represents drain D rain.
Fig. 5 is the principle schematic that the utility model LED driver is applied to inverse-excitation type DC converting circuit, as shown in Figure 5, by LED driver shown in above-mentioned Fig. 1, be applied in FLYBACK circuit, the principle of this circuit and Fig. 2 is similar, comprises power supply circuits, chopper circuit and multiple LED load and forms complete LED.In IC in Figure 5, S represents source S ource, and D represents drain D rain.
Fig. 6 is the principle schematic that the utility model LED driver is applied to another kind of inverse-excitation type DC converting circuit, as shown in Figure 6, by LED driver shown in above-mentioned Fig. 1, be applied in the FLYBACK circuit with DC-DC conversion, the principle of this circuit and Fig. 2 is similar, comprises power supply circuits, chopper circuit and multiple LED load and forms complete LED.In IC in figure 6, S represents source S ource, and D represents drain D rain.
This LED driver circuit can be applicable to BUCK circuit as shown in Figure 2, BUCKBOOST circuit as shown in Figure 3, BOOST circuit as shown in Figure 4, FLYBACK circuit, SEPIC circuit, FORWARD circuit or HALFBRIDGE circuit as shown in Figure 5 and Figure 6.The type of the control unit that the above LED driver circuit can adopt according to LED driver IC and gallium nitride MOSFET, selects or does to be out of shape according to practical application.
In sum, the LED driver that the utility model provides can be applied to buck circuit, boost chopper, the two-way chopper circuit of buck-boost, inverse-excitation type DC converting circuit, allow output voltage to be greater than, to be less than or equal to the direct current conversion SEPIC circuit of input voltage, positive activation type DC converting circuit or half-bridge circuit.
The utility model adopts gallium nitride MOSFET as power cell, under high-frequency work state, interference, loss and switching speed are much better than and adopt traditional silicon high-voltage MOSFET, the volume of peripheral devices can be reduced simultaneously, such as inductance and transformer, electric capacity etc., thus the volume reducing LED driver, and the high-frequency switching signal optimization process that the control unit that gallium nitride MOSFET coordinates produces and integration packaging make control loop area minimization, reduce stray inductance.
Fig. 7 is the structural representation of the utility model LED, and as shown in Figure 7, this kind of LED comprises: power supply circuits 10, drive circuit 20 and at least one light-emitting diode (LightEmittingDiode, LED) 30; Described power supply circuits 10 are connected with the input of described drive circuit 20; The output of described drive circuit 20 is connected with at least one LED30 described; Wherein, described drive circuit 20 comprises the LED driver shown in Fig. 1.
The LED that the present embodiment provides, gallium nitride MOSFET in employing the utility model is as power cell, under high-frequency work state, interference, loss and switching speed are much better than and adopt traditional silicon high-voltage MOSFET, the volume of peripheral devices can be reduced, such as inductance and transformer, electric capacity etc. simultaneously, the high-frequency switching signal optimization process that the control unit that gallium nitride MOSFET coordinates produces and integration packaging make control loop area minimization, reduce stray inductance.
Last it is noted that above each embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to foregoing embodiments, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of each embodiment technical scheme of the utility model.
Claims (5)
1. a LED driver, is characterized in that, comprising: control unit and power cell; Described control unit and described power cell adopt and are electrically connected; Described power cell adopts gallium nitride FET wafer; Described control unit is greater than the control signal of 250K hertz for generation of minimum frequency of operation; Described power cell is used for converting the alternating voltage of input to direct voltage needed for LED under the control of described control unit.
2. LED driver according to claim 1, is characterized in that, described LED driver also comprises: base plate for packaging or slide holder; Described control unit and described gallium nitride FET wafer are fixed on described base plate for packaging or described slide holder; Described control unit and described gallium nitride FET wafer need external electric point to be connected with the pin of described base plate for packaging or described slide holder respectively, and described control unit and described gallium nitride FET wafer are encapsulated at described base plate for packaging or described slide holder by capsulation material.
3. LED driver according to claim 1 and 2, is characterized in that, described electric point comprises the grid of described gallium nitride FET wafer, source electrode and drain electrode; The port that grid and the described control unit of described gallium nitride FET wafer export control signal is connected; The source electrode of described gallium nitride FET wafer and ground connection; The drain electrode of described gallium nitride FET wafer is connected with the positive pole of described LED to be driven.
4. LED driver according to claim 3, it is characterized in that, described LED driver is applied to buck circuit, boost chopper, the two-way chopper circuit of buck-boost, inverse-excitation type DC converting circuit, allows output voltage to be greater than, to be less than or equal to the direct current conversion SEPIC circuit of input voltage, positive activation type DC converting circuit or half-bridge circuit.
5. a LED, is characterized in that, comprising: power supply circuits, drive circuit and at least one LED; Described power supply circuits are connected with the input of described drive circuit; The output of described drive circuit is connected with at least one LED described;
Wherein, described drive circuit comprises the LED driver described in any one of Claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520771208.3U CN205029932U (en) | 2015-09-30 | 2015-09-30 | Led driver and led lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520771208.3U CN205029932U (en) | 2015-09-30 | 2015-09-30 | Led driver and led lamp |
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| Publication Number | Publication Date |
|---|---|
| CN205029932U true CN205029932U (en) | 2016-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520771208.3U Active CN205029932U (en) | 2015-09-30 | 2015-09-30 | Led driver and led lamp |
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| CN (1) | CN205029932U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017054560A1 (en) * | 2015-09-30 | 2017-04-06 | Sengled Co., Ltd. | Light-emitting diode (led) driving device and led lighting device containing the same |
| WO2018120835A1 (en) * | 2016-12-29 | 2018-07-05 | 生迪智慧科技有限公司 | Led lamp |
-
2015
- 2015-09-30 CN CN201520771208.3U patent/CN205029932U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017054560A1 (en) * | 2015-09-30 | 2017-04-06 | Sengled Co., Ltd. | Light-emitting diode (led) driving device and led lighting device containing the same |
| WO2018120835A1 (en) * | 2016-12-29 | 2018-07-05 | 生迪智慧科技有限公司 | Led lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: LED driver and LED light Effective date of registration: 20230227 Granted publication date: 20160210 Pledgee: Tongxiang Yunbei Investment Construction Co.,Ltd. Pledgor: SENGLED Co.,Ltd. Registration number: Y2023980033490 |