CN104578772A - Boosting circuit - Google Patents
Boosting circuit Download PDFInfo
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- CN104578772A CN104578772A CN201410829328.4A CN201410829328A CN104578772A CN 104578772 A CN104578772 A CN 104578772A CN 201410829328 A CN201410829328 A CN 201410829328A CN 104578772 A CN104578772 A CN 104578772A
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- power
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- module
- switching tube
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- Engineering & Computer Science (AREA)
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- Dc-Dc Converters (AREA)
Abstract
The invention provides a boosting circuit. The boosting circuit comprises a capacitor C, an inductor L, a control unit, a switching tube, a freewheeling tube and two diodes, wherein one end of the inductor L is connected with a power input end, the other end of the inductor L is connected with an input end of the freewheeling tube, and an output end of the freewheeling tube is a power output end; an anode end of one diode is connected with the power input end, an anode end of the other diode is connected with the power output end, and a common cathode end of the two diodes is connected with a power input end of the control unit; an output end of the control unit is connected with a control end of the switching tube, and the switching tube is in series connection between the input end and a grounding end of the freewheeling tube; one end of the capacitor C is connected with the power input end, and the other end is grounded. With the adoption of the boosting circuit, the conduction loss of the freewheeling tube and the switching tube is reduced, and the overall loss of the boosting circuit is reduced, so that the overall conversion rate of the boosting circuit is increased; meanwhile, the boosting circuit has the advantages of low cost, high reliability and easiness in implementation and popularization.
Description
Technical field
The present invention relates to power technique fields, specifically be a kind of booster circuit.
Background technology
Power supply is the basis of electronics industry.Wherein, switch type power converter and design thereof are important component parts indispensable in field of power supplies.According to different application demands, people devise multiple transformation of electrical energy processing unit, there is various power conversion circuit, as: AC/AC boosting (step-down) circuit, AC/DC boosting (step-down) circuit, DC/DC boosting (step-down) circuit etc.Wherein, the DC/DC booster circuit for the purpose of boosting is also referred to as BOOST circuit.BOOST circuit has the advantages such as efficiency simple and reliable for structure, low in energy consumption is high, support High-current output, is most widely used in boosting field.
In prior art, typical BOOST booster circuit as shown in Figure 1, forms primarily of switching tube Q and control unit, fly-wheel diode and L, C element.Its operation principle is mainly by controlling opening and shutoff of power switch pipe Q, realize boosting and the voltage regulation function of output voltage, its output voltage is VOUT=VIN/ (1-β), β is the duty ratio of Q conducting, i.e. β=TON/ (TON+TOFF), wherein TON, TOFF are ON time and the turn-off time of Q in a switch periods respectively, due to β < 1, therefore there is VOUT > VIN, namely obtain boosting and export.The conversion efficiency of BOOST power supply is: μ=VOUT*IOUT/ (VIN*IIN).
On the earth that the energy is more and more in short supply, improving power supply conversion efficiency is one of problem that engineers is eternal, for existing power circuit, improves power supply conversion efficiency, just means the power consumption that will reduce circuit self.For the typical BOOST circuit shown in Fig. 1, the power consumption of self is mainly from the conduction loss of sustained diode, the conduction loss of switching tube Q and driving loss etc.For this reason, people optimize BOOST circuit, have employed there is less conducting resistance power MOS pipe to replace diode D, as shown in Figure 2, the BOOST circuit of this optimization, also referred to as synchronous rectification BOOST circuit, is the ripe BOOST circuit used in current techniques field.
On the basis of synchronous rectification BOOST circuit, people are also reducing own loss all the time by every means further, and way common at present selects more low on-resistance metal-oxide-semiconductor etc.But these common methods are limited by the development of device fabrication all the time, select the device with better parameter to mean the increase of circuit cost in addition, therefore these methods can not enforcement indiscriminately ad. as one wishes, and this is the major defect that prior art exists.Therefore, be necessary to provide a kind of BOOST booster circuit that can solve the problem very well.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of booster circuit, improves the conversion efficiency of circuit further, and has the advantages such as low cost, highly reliable, easy realization and easy popularization.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is:
A kind of booster circuit, comprises electric capacity C, inductance L, control unit, switching tube, continued flow tube and two diodes; One end of inductance L connects power input, and the other end connects the input of described continued flow tube, and the output of described continued flow tube is power output end;
The anode tap of a described diode connects power input, and the anode tap of diode described in another connects power output end, and the common cathode of two described diodes extremely connects the power input of described control unit; The output of described control unit connects the control end of described switching tube, between the input that described switching tube is connected on described continued flow tube and earth terminal; One end of described electric capacity C connects power input, other end ground connection.
Beneficial effect of the present invention is: the booster circuit that the present invention is different from prior art exists larger power consumption, even if select the low on-resistance metal-oxide-semiconductor that can improve loss, also the development problem of device fabrication is limited by all the time, and the problem that will circuit cost caused to increase.The invention provides a kind of booster circuit, utilize the base attribute of output voltage higher than input voltage of booster circuit, and the one-way conduction of diode and automatic switchover characteristic, increase by two diodes in circuit, the anode tap of a diode connects power supply input, the anode tap of another diode connects power supply and exports, the power input of the common cathode connection control unit that the negative electrode parallel connection of two diodes is formed afterwards.Two diodes are by the size according to the power input voltage be attached thereto and electric power output voltage, automatically switch to one end conducting that magnitude of voltage is higher, using the input voltage of larger magnitude of voltage as control unit, thus improve the input voltage VCC of control unit, the raising of input voltage VCC will cause the raising of control unit output voltage, thus reduce the conducting resistance of switching tube, reduce the conduction loss of switching tube; The transfer ratio of further raising booster power; Further, booster power of the present invention has again low cost, highly reliable, easy realization and the easy advantage promoted concurrently simultaneously.
Accompanying drawing explanation
Fig. 1 is a kind of booster circuit figure of prior art;
Fig. 2 is the another kind of booster circuit figure of prior art;
Fig. 3 is a kind of booster circuit figure of one embodiment of the invention;
Fig. 4 is the structural representation of control unit in a kind of booster circuit of one embodiment of the invention.
Embodiment
By describing technology contents of the present invention in detail, realized object and effect, accompanying drawing is coordinated to be explained below in conjunction with execution mode.
The design of most critical of the present invention is: the input output voltage of booster circuit being fed back to common cathode diode, common cathode diode is connected to control unit, automatically select high voltage as output by common cathode diode, promote the whole efficiency of booster circuit.
Please refer to Fig. 1 to Fig. 4, the invention provides a kind of booster circuit, comprise electric capacity C, inductance L, control unit, switching tube, continued flow tube and two diodes; One end of inductance L connects power input, and the other end connects the input of described continued flow tube, and the output of described continued flow tube is power output end;
The anode tap of a described diode connects power input, and the anode tap of diode described in another connects power output end, and the common cathode of two described diodes extremely connects the power input of described control unit; The output of described control unit connects the control end of described switching tube, between the input that described switching tube is connected on described continued flow tube and earth terminal; One end of described electric capacity C connects power input, other end ground connection.
From foregoing description, beneficial effect of the present invention is: the invention provides a kind of booster circuit, utilize the base attribute of output voltage higher than input voltage of booster circuit, and the one-way conduction of diode and automatic switchover characteristic, increase by two diodes in circuit, the anode tap of a diode connects power supply input, and the anode tap of another diode connects power supply and exports, the power input of the common cathode connection control unit of two diodes.Two diodes are by the size according to the power input voltage be attached thereto and electric power output voltage, automatically switch to one end conducting that magnitude of voltage is higher, using the input voltage of larger magnitude of voltage as control unit, thus improve the input voltage VCC of control unit, the raising of input voltage VCC will cause the raising of control unit output voltage, thus reducing the conducting resistance of switching tube, the conducting reducing switching tube damages; The transfer ratio of further raising booster power; Further, booster power of the present invention has again low cost, highly reliable, easy realization and the easy advantage promoted concurrently simultaneously.
It should be noted that, the process that two diodes be connected with power input and power output end separately respectively realize automatically switching to higher voltage value one tunnel specifically comprises: when the output voltage VO UT of power output end is greater than the input voltage VIN of power input, diode will automatically switch to the input voltage of output voltage VO UT as control unit of power output end; When the input voltage VIN of power input is greater than the output voltage VO UT of power output end, diode will automatically switch to the input voltage of input voltage VIN as control unit of power input; The input voltage VCC of control unit is improved by switching to coming of higher voltage value, the raising of input voltage VCC will cause the raising of control unit output voltage, thus reduce the conducting resistance of continued flow tube, reduce the conduction loss of conducting resistance, improve the overall losses of booster circuit.
Further, described control unit comprises power module, PWM control module and driver module; Described power module is connected with described PWM control module and driver module respectively, and described PWM control module is connected with described driver module; Described driver module is connected with the control end of described switching tube.
Seen from the above description, the major function that control unit has been mainly used in booster circuit controls, and specifically for shutoff and the conducting of control switch pipe and continued flow tube, realizes boosting and the voltage regulation function of output voltage.
Further, described driver module comprises the first driver module and the second driver module;
Described continued flow tube is power MOS pipe; The source electrode of described power MOS pipe is connected with described inductance L, and the drain electrode of described power MOS pipe is connected with power output end, and the grid of described power MOS pipe is connected with described second driver module;
Described first driver module is connected with the control end of described switching tube.
Seen from the above description, the present invention adds two diodes in existing typical BOOST circuit, the anode of two diodes connects power input and power output end respectively separately, and the output voltage VCC of two diodes is as the input voltage of power module in control unit; First driver module of described driver module exports Vg1 for driving external power MOS pipe, and the second driver module exports Vg2 for driving external switching tube.This kind of control unit all has a characteristic, the voltage of Vg1 and Vg2 output and the supply power voltage VCC positive correlation of control unit, namely the voltage of VCC higher then Vg1 and Vg2 output is also higher, this characteristic is basis and the prerequisite of technical solution of the present invention, and the structure composition of the control unit described in the present invention is only a specific embodiment, different control units may possess different functional modules and concrete implementation, but as long as the control unit possessing above-mentioned characteristic equally can both use the object realizing in the present invention communicating.
It should be noted that, for above-mentioned boost circuit structure, draw from the power loss consideration of the boost circuit structure self reducing prior art, one of effective way by reducing the conducting resistance of power MOS pipe, and the conducting resistance of power MOS pipe is relevant with its gate drive voltage Vgs, concrete: Vgs (absolute value) voltage is larger, then conducting resistance is less (for NMOS, Vgs=Vgs; For PMOS, Vgs=-Vgs; Below only illustrate for NMOS).Therefore, the present invention is that the gate drive voltage by improving metal-oxide-semiconductor reduces metal-oxide-semiconductor conducting resistance, improves the conversion efficiency of BOOST circuit.
In existing BOOST circuit, the input VCC of control unit is directly connected with power input, i.e. VCC=VIN, because VCC voltage is lower, so voltage Vg1, Vg2 that the grid electrode drive module of control unit (i.e. the first driver module and the second driver module) exports are also lower, then the conducting resistance of metal-oxide-semiconductor is larger, the conduction loss caused is comparatively large, thus causes the conversion efficiency of BOOST circuit lower.And in BOOST booster circuit of the present invention, make use of the base attribute of output voltage higher than input voltage of BOOST circuit, add one-way conduction and the automatic switchover of diode, when electric power output voltage VOUT is greater than power input voltage VIN, the input of control unit automatically switches to VOUT, namely has VCC=VOUT > VIN.The raising of VCC, the raising of voltage Vg1, Vg2 of also causing the grid electrode drive module of control unit to export, thus the conducting resistance reducing metal-oxide-semiconductor, reduce its conduction loss, improves the conversion efficiency of BOOST circuit.And output voltage VO UT is higher, conversion efficiency promotes larger relatively.
Refer to Fig. 3, the operation principle of such scheme is:
The negative electrode of diode D1 and diode D2 is in parallel, and be connected with the VCC of control unit; The anode of D1 meets power input VIN, and the anode of D2 meets power output end VOUT.
In an initial condition, the input VIN of BOOST circuit of the present invention has voltage, but output VOUT is zero, now diode D1 conducting, and diode D2 ends, then the input voltage VIN of the input voltage VCC ≈ power supply of control unit; Now the first driver module of control unit and the gate drive voltage of the second driver module output are respectively Vg1 and Vg2, and under this state, switching tube Q1 and continued flow tube Q2 has conducting resistance Ron1 and Ron2.
After circuit brings into operation, electric power output voltage VOUT slowly rises, when VOUT≤VIN, diode D1 conducting equally, diode D2 ends, and the input voltage VCC ≈ VIN of control unit, metal-oxide-semiconductor Q1 and Q2 conducting resistance remain unchanged (Ron1 and Ron2).When after VOUT > VIN, D1 then ends, D2 conducting, now VCC ≈ VOUT > VIN, the gate drive voltage that the driver module of control unit exports improves, then metal-oxide-semiconductor Q1 and Q2 conducting resistance start to diminish, and along with the rising of electric power output voltage VOUT, switching tube and continued flow tube conducting resistance become less and less.
When after circuit stable output, electric power output voltage VOUT reaches maximum, and still has VOUT > VIN, VCC ≈ VOUT=maximum, thus switching tube Q1 and continued flow tube Q2 conducting resistance minimum.
The conducting resistance of switching tube is minimum, reduces the impedance in loop during switching tube conducting as much as possible, makes electric energy be converted into magnetic energy as much as possible and is stored in inductance L; Afterflow metal-oxide-semiconductor Q2 conducting resistance is minimum, reduces the impedance of load circuit as much as possible, makes magnetic energy be converted into electric energy as much as possible and exports, make the loss in loop drop to minimum simultaneously.Therefore, the transformation efficiency of BOOST circuit of the present invention is improve as much as possible.
Further, described control unit comprises power module, PFM control module and driver module; Described power module is connected with described PFM control module and driver module respectively, and described PFM control module is connected with described driver module; Described driver module is connected with the control end of described switching tube.
Further, described continued flow tube is power MOS pipe, and the source electrode of described power MOS pipe is connected with described inductance L, and the drain electrode of described power MOS pipe is connected with power output end, and the grid of described power MOS pipe is connected with the output of described control unit.
Further, being encapsulated in a packaging body of two described diode cathode parallel connections.Two diode package become an element to connect in circuit, that can reduce circuit takies volume, reduces circuit connecting wire.
Booster circuit of the present invention only need spend the cost of relative moderate, and just can obtain higher conversion efficiency on the basis of original BOOST circuit, the conversion efficiency of the BOOST circuit of the present invention and prior art contrasts as following table:
Turn 7.5V boosting with 3.3V, output current 1.5A is example:
Note: above data only exemplarily illustrate, calculating for simplifying, ignoring the power loss that other modules cause.
In practical application, due to applied environment difference, the components and parts selected and control unit difference etc., conversion efficiency and lifting amplitude thereof have difference.But as seen from the above table, after adopting technical scheme of the present invention, the trend that conversion efficiency improves is consistent.
Embodiments of the invention one are:
A kind of high efficiency DC-DC booster circuit, comprises electric capacity C, inductance L, control unit, metal-oxide-semiconductor, fly-wheel diode and two common cathode diodes; Power input connects inductance L, and inductance L connects power output end after connecting with described afterflow diode; Two anode inputs of common cathode diode connect power input and power output end, the power input of common cathode connection control unit separately respectively; The output of control unit connects the grid of metal-oxide-semiconductor, and the drain electrode of metal-oxide-semiconductor connects the positive pole of fly-wheel diode, source ground; One end of described electric capacity C connects power output end, other end ground connection.
Please refer to Fig. 3, embodiments of the invention two are:
A kind of high efficiency DC-DC booster circuit, comprises electric capacity C, inductance L, control unit, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 and two common cathode diode D1 and D2; Power input VIN connects inductance L, and inductance L is connected with the source electrode of described second metal-oxide-semiconductor Q2, and the drain electrode of described second metal-oxide-semiconductor Q2 meets power output end VOUT, and the grid of described second metal-oxide-semiconductor Q2 connects the power output end of control unit; The anode of the diode D1 in common cathode diode connects power input VIN, and the anode of diode D2 connects power output end VOUT, the input VCC of common cathode connection control unit;
Control unit comprises power module, PWM control module, the first metal-oxide-semiconductor driver module, the second metal-oxide-semiconductor driver module and other modules; The output termination input VCC of described power module, the output of power module is connected with the input of PWM control module, the first metal-oxide-semiconductor driver module and the second metal-oxide-semiconductor driver module respectively; The output of described PWM control module connects the first metal-oxide-semiconductor driver module and the second metal-oxide-semiconductor driver module respectively;
The output Vg1 of the first metal-oxide-semiconductor driver module connects the grid of the first metal-oxide-semiconductor Q1, and the drain electrode of the first metal-oxide-semiconductor Q1 is connected with the source electrode of the second metal-oxide-semiconductor Q2, the source ground of the first metal-oxide-semiconductor Q1; The output Vg2 of the second metal-oxide-semiconductor driver module connects the grid of the second metal-oxide-semiconductor Q2; One end of described electric capacity C connects power output end, other end ground connection.
In sum, a kind of booster circuit provided by the invention, not only reduces the conduction loss of continued flow tube and switching tube, reduces the overall losses of booster circuit, and then promotes the overall transformation rate of booster circuit; And the advantage having low cost, high reliability, easily realization simultaneously concurrently and easily promote.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every equivalents utilizing specification of the present invention and accompanying drawing content to do, or be directly or indirectly used in relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (6)
1. a booster circuit, is characterized in that, comprises electric capacity C, inductance L, control unit, switching tube, continued flow tube and two diodes; One end of inductance L connects power input, and the other end connects the input of described continued flow tube, and the output of described continued flow tube is power output end;
The anode tap of a described diode connects power input, and the anode tap of diode described in another connects power output end, and the common cathode of two described diodes extremely connects the power input of described control unit; The output of described control unit connects the control end of described switching tube, between the input that described switching tube is connected on described continued flow tube and earth terminal; One end of described electric capacity C connects power input, other end ground connection.
2. a kind of booster circuit according to claim 1, is characterized in that, described control unit comprises power module, PWM control module and driver module; Described power module is connected with described PWM control module and driver module respectively, and described PWM control module is connected with described driver module; Described driver module is connected with the control end of described switching tube.
3. a kind of booster circuit according to claim 2, is characterized in that, described driver module comprises the first driver module and the second driver module;
Described continued flow tube is power MOS pipe; The source electrode of described power MOS pipe is connected with described inductance L, and the drain electrode of described power MOS pipe is connected with power output end, and the grid of described power MOS pipe is connected with described second driver module;
Described first driver module is connected with the control end of described switching tube.
4. a kind of booster circuit according to claim 1, is characterized in that, described control unit comprises power module, PFM control module and driver module; Described power module is connected with described PFM control module and driver module respectively, and described PFM control module is connected with described driver module; Described driver module is connected with the control end of described switching tube.
5. a kind of booster circuit according to claim 2 to 4 any one, it is characterized in that, described continued flow tube is power MOS pipe, the source electrode of described power MOS pipe is connected with described inductance L, the drain electrode of described power MOS pipe is connected with power output end, and the grid of described power MOS pipe is connected with the output of described control unit.
6. a kind of booster circuit according to claim 1, is characterized in that, being encapsulated in a packaging body of two described diode cathode parallel connections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410829328.4A CN104578772A (en) | 2014-12-26 | 2014-12-26 | Boosting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410829328.4A CN104578772A (en) | 2014-12-26 | 2014-12-26 | Boosting circuit |
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| CN104578772A true CN104578772A (en) | 2015-04-29 |
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| CN201410829328.4A Pending CN104578772A (en) | 2014-12-26 | 2014-12-26 | Boosting circuit |
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| CN106549557A (en) * | 2015-09-23 | 2017-03-29 | 意法半导体股份有限公司 | For the drive circuit of synchronous rectifier switch, corresponding conversion device and method |
| CN107769556A (en) * | 2017-11-01 | 2018-03-06 | 广州金升阳科技有限公司 | Synchronous rectification BOOST converter, synchronous commutating control circuit and method |
| WO2018090558A1 (en) * | 2016-11-18 | 2018-05-24 | 贵州恒芯微电子科技有限公司 | Synchronous rectification circuit |
| CN110277911A (en) * | 2018-03-15 | 2019-09-24 | 深圳市三诺数字科技有限公司 | Power supply circuit and sound equipment applied to sound equipment |
| CN114679055A (en) * | 2022-01-14 | 2022-06-28 | 荣耀终端有限公司 | Switching power supply circuit and terminal equipment |
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| CN110277911A (en) * | 2018-03-15 | 2019-09-24 | 深圳市三诺数字科技有限公司 | Power supply circuit and sound equipment applied to sound equipment |
| CN114679055A (en) * | 2022-01-14 | 2022-06-28 | 荣耀终端有限公司 | Switching power supply circuit and terminal equipment |
| WO2023134381A1 (en) * | 2022-01-14 | 2023-07-20 | 荣耀终端有限公司 | Switch power source circuit and terminal device |
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Application publication date: 20150429 |
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