CN207637789U - Three-chip type built-in condenser synchronous rectification diode - Google Patents
Three-chip type built-in condenser synchronous rectification diode Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/926—Multiple bond pads having different sizes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
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Abstract
本实用新型公开了三片式内置电容式同步整流二极管,包括第一框架、MOSFET芯片、控制IC芯片、第二框架、内置电容,所述第二框架有一个外置引脚,第二框架一侧设有第三框架,控制IC芯片固定在第二框架上,内置电容的外接线段连接第二框架上,内接线端连接第三框架;第一框架设有一个外置引脚,MOSFET芯片固定在第一框架上;所述MOSFET芯片与控制IC芯片之间、控制IC芯片与第三框架之间、MOSFET芯片与第二框架之间、控制IC芯片与第一框架之间通过键合线连接。三片式内置电容式同步整流二极管,优化了结构,整合PAD可利用面积,排除了易造成不良的结构缺陷。
The utility model discloses a three-piece built-in capacitive synchronous rectification diode, comprising a first frame, a MOSFET chip, a control IC chip, a second frame, and a built-in capacitor. The second frame has an external pin, and the second frame has a There is a third frame on the side, the control IC chip is fixed on the second frame, the external wiring segment of the built-in capacitor is connected to the second frame, and the internal terminal is connected to the third frame; the first frame has an external pin, and the MOSFET chip is fixed On the first frame; between the MOSFET chip and the control IC chip, between the control IC chip and the third frame, between the MOSFET chip and the second frame, between the control IC chip and the first frame through bonding wires . The three-chip built-in capacitive synchronous rectification diode optimizes the structure, integrates the available area of the PAD, and eliminates structural defects that may cause defects.
Description
技术领域technical field
本实用新型涉及芯片生产领域,尤其是一种三片式内置电容式同步整流二极管。The utility model relates to the field of chip production, in particular to a three-chip built-in capacitive synchronous rectifier diode.
背景技术Background technique
肖特基整流管的结构原理与PN结整流管有很大的区别通常将PN结整流管称作结整流管,而把金属-半导管整流管叫作肖特基整流管。现有的整流元件肖特基二极管存在整流损耗大转换效率低的问题。The structural principle of the Schottky rectifier is very different from that of the PN junction rectifier. Usually, the PN junction rectifier is called a junction rectifier, and the metal-semiconductor rectifier is called a Schottky rectifier. The existing rectification element Schottky diode has the problem of large rectification loss and low conversion efficiency.
同步整流二极管是由控制IC、功率MOSFET及其附属电路组成,从而实现低损耗整流的新技术。现有同步整流结构元件拙而不巧,尺寸较大,散热困难、引脚纤细反复,对安装使用造成一定的困扰。Synchronous rectification diode is composed of control IC, power MOSFET and its auxiliary circuit, so as to realize the new technology of low loss rectification. The existing synchronous rectification structural components are clumsy and inconvenient, large in size, difficult to dissipate heat, and thin and repetitive pins, which cause certain troubles for installation and use.
实用新型内容Utility model content
为了解决现有技术的不足,本实用新型提出了三片式内置电容式同步整流二极管,优化了结构,整合PAD可利用面积,排除了易造成不良的结构缺陷。In order to solve the deficiencies of the prior art, the utility model proposes a three-chip built-in capacitive synchronous rectifier diode, which optimizes the structure, integrates the available area of the PAD, and eliminates the structural defects that are likely to cause defects.
本实用新型采用如下技术方案:The utility model adopts the following technical solutions:
三片式内置电容式同步整流二极管,包括第一框架、MOSFET芯片、控制IC芯片、第二框架、内置电容,所述第二框架有一个外置引脚,第二框架一侧设有第三框架,控制IC芯片固定在第二框架上,内置电容的外接线段连接第二框架上,内接线端连接第三框架;第一框架设有一个外置引脚,MOSFET芯片固定在第一框架上;所述MOSFET芯片与控制IC芯片之间、控制IC芯片与第三框架之间、MOSFET芯片与第二框架之间、控制IC芯片与第一框架之间通过键合线连接。Three-piece built-in capacitive synchronous rectification diode, including a first frame, a MOSFET chip, a control IC chip, a second frame, and a built-in capacitor. The second frame has an external pin, and a third frame is provided on one side of the second frame. Frame, the control IC chip is fixed on the second frame, the external wiring segment of the built-in capacitor is connected to the second frame, and the internal terminal is connected to the third frame; the first frame is provided with an external pin, and the MOSFET chip is fixed on the first frame ; between the MOSFET chip and the control IC chip, between the control IC chip and the third frame, between the MOSFET chip and the second frame, and between the control IC chip and the first frame through bonding wires.
进一步地,所述内置电容为MLCC电容。Further, the built-in capacitor is an MLCC capacitor.
进一步地,所述第一框架、第二框架为铜合金框架。Further, the first frame and the second frame are copper alloy frames.
进一步地,所述第一框架、MOSFET芯片、控制IC芯片、第二框架、内置电容通过键合线焊接成型后封装于塑封体内,构成一个整体的同步整流二极管。Further, the first frame, the MOSFET chip, the control IC chip, the second frame, and the built-in capacitor are welded and molded by bonding wires, and then packaged in a plastic package to form an integral synchronous rectification diode.
更进一步地,所述第一框架的外置引脚为同步整流二极管的阴极,第二框架的外置引脚为同步整流二极管的阳极。Furthermore, the external pin of the first frame is the cathode of the synchronous rectification diode, and the external pin of the second frame is the anode of the synchronous rectification diode.
采用如上技术方案取得的有益技术效果为:The beneficial technical effect obtained by adopting the above technical scheme is:
顺应半导体整流器件向轻薄化、小型化、表面贴装的发展趋势,本实用新型研发的紧凑型同步整流结构及其制作方法,通过元件集成、优化结构,排除易造成不良的结构缺陷等手段,达到缩小元件尺寸,简化安装工艺,提高散热性之目的,因此该同步整流结构具有极大的优越性。Complying with the development trend of thinner, smaller and surface-mounted semiconductor rectifier devices, the compact synchronous rectification structure and its manufacturing method developed by this utility model eliminate structural defects that are likely to cause defects through component integration and optimization of the structure. The purpose of reducing the size of components, simplifying the installation process, and improving heat dissipation is achieved, so the synchronous rectification structure has great advantages.
三片式内置电容式同步整流二极管,优化了结构,整合PAD可利用面积(PCB或印刷电路板中的焊盘放入面积),排除了易造成不良的结构缺陷。The three-piece built-in capacitive synchronous rectification diode optimizes the structure and integrates the available area of the PAD (the area where the pads in the PCB or printed circuit board are placed), eliminating structural defects that are likely to cause defects.
附图说明Description of drawings
图1为三片式内置电容式同步整流二极管结构示意图。Figure 1 is a schematic diagram of the structure of a three-chip built-in capacitive synchronous rectifier diode.
图2为三片式内置电容式同步整流二极管制作过程示意图。Fig. 2 is a schematic diagram of the manufacturing process of the three-piece built-in capacitive synchronous rectifier diode.
图3为三片式内置电容式同步整流二极管产品封装示意图。Figure 3 is a schematic diagram of the package of a three-piece built-in capacitive synchronous rectifier diode product.
图4为三片式内置电容式同步整流二极管产品内部控制原理图。Figure 4 is a schematic diagram of the internal control of the three-chip built-in capacitive synchronous rectifier diode product.
图5为本实用新型正向整流应用电路图。Fig. 5 is the application circuit diagram of the forward rectification of the utility model.
图6为本实用新型反向整流应用电路图。Fig. 6 is a circuit diagram of a reverse rectification application of the utility model.
图中,1、第一框架;2、MOSFET芯片;3、控制IC芯片;4、第二框架;5、内置电容;6、第三框架。In the figure, 1. first frame; 2. MOSFET chip; 3. control IC chip; 4. second frame; 5. built-in capacitor; 6. third frame.
具体实施方式Detailed ways
结合附图1至6对本实用新型的具体实施方式做进一步说明:The specific embodiment of the utility model is further described in conjunction with accompanying drawing 1 to 6:
实施例1:Example 1:
如图1所示,三片式内置电容式同步整流二极管,包括第一框架1、MOSFET芯片2、控制IC芯片3、第二框架4、内置电容5,所述第二框架有一个外置引脚,第二框架一侧设有第三框架,控制IC芯片固定在第二框架上,内置电容的外接线段连接第二框架上,内接线端连接第三框架6;第一框架设有一个外置引脚,MOSFET芯片固定在第一框架上;所述MOSFET芯片与控制IC芯片之间、控制IC芯片与第三框架之间、MOSFET芯片与第二框架之间、控制IC芯片与第一框架之间通过键合线连接。As shown in Figure 1, the three-piece built-in capacitive synchronous rectification diode includes a first frame 1, a MOSFET chip 2, a control IC chip 3, a second frame 4, and a built-in capacitor 5, and the second frame has an external lead One side of the second frame is provided with a third frame, the control IC chip is fixed on the second frame, the external wiring segment of the built-in capacitor is connected to the second frame, and the internal terminal is connected to the third frame 6; the first frame is provided with an external Pins are set, and the MOSFET chip is fixed on the first frame; between the MOSFET chip and the control IC chip, between the control IC chip and the third frame, between the MOSFET chip and the second frame, between the control IC chip and the first frame connected by bonding wires.
内置电容为MLCC电容。第一框架、第二框架为铜合金框架。第一框架1、MOSFET芯片2、控制IC芯片3、第二框架4、内置电容5、第三框架6通过键合线焊接成型后封装于塑封体内,构成一个整体的同步整流二极管。The built-in capacitors are MLCC capacitors. The first frame and the second frame are copper alloy frames. The first frame 1, the MOSFET chip 2, the control IC chip 3, the second frame 4, the built-in capacitor 5, and the third frame 6 are welded and formed by bonding wires and packaged in a plastic package to form an integral synchronous rectification diode.
第一框架的外置引脚为同步整流二极管的阴极,第二框架的外置引脚为同步整流二极管的阳极。The external pin of the first frame is the cathode of the synchronous rectification diode, and the external pin of the second frame is the anode of the synchronous rectification diode.
三片式内置电容式同步整流二极管简化了框架的加工方式,第三框架为电容提供了开阔的窗口避免了框架和电容外电极的接触。The three-chip built-in capacitive synchronous rectifier diode simplifies the processing of the frame, and the third frame provides an open window for the capacitor to avoid contact between the frame and the external electrodes of the capacitor.
实施例2:Example 2:
三片式内置电容式同步整流二极管采用如下流程制备:The three-piece built-in capacitive synchronous rectifier diode is prepared by the following process:
(1)原物料准备:定制第一框架、第二框架、第三框架的铜合金框架,准备MOSFET芯片、控制IC芯片、内置电容;器件安装前检验外观及电性以剔出不良。(1) Raw material preparation: Customize the copper alloy frames of the first frame, the second frame, and the third frame, prepare MOSFET chips, control IC chips, and built-in capacitors; inspect the appearance and electrical properties of the devices before installation to eliminate defects.
(2)芯片装片及焊接:用自动焊接机将MOSFET芯片与第一框架结合,控制IC芯片第二框架贴合,内置电容与内接线端与第三框架结合,外接线端与第二框架结合,并焊接成型。(2) Chip mounting and welding: use an automatic welding machine to combine the MOSFET chip with the first frame, control the IC chip with the second frame, combine the built-in capacitor with the internal terminal with the third frame, and the external terminal with the second frame Combined and welded into shape.
(3)引线键合:通过自动打线机键合各器件构成回路。(3) Wire bonding: each device is bonded by an automatic wire bonding machine to form a circuit.
(4)塑封成型:将已键合完成的器件通过压模工序塑封成型。(4) Plastic sealing and molding: plastic sealing and molding of the bonded devices through a compression molding process.
(5)电镀及切粒:去残胶、引脚镀锡(若框架采用鎳钯金或鎳金表面处理后则不需镀锡)、烘烤、切粒。(5) Electroplating and dicing: Remove residual glue, tin-plate pins (if the frame is treated with nickel-palladium-gold or nickel-gold surface, tin-plating is not required), baking, and dicing.
(6)印测:将切粒后元件经测试机测试合格后印字装盒。(6) Printing test: After the diced components are tested by the testing machine, they are printed and packed into boxes.
(7)目检:显微镜下观察,剔除外观不良。(7) Visual inspection: observe under a microscope, and remove bad appearance.
(8)包装及入库。(8) Packaging and storage.
采用如上流程制作成如图3所示的三片式内置电容式同步整流二极管。The three-chip built-in capacitive synchronous rectifier diode shown in Figure 3 is manufactured by the above process.
实施例3:Example 3:
如实施例1所述,三片式内置电容式同步整流二极管,第一框架的外置引脚为同步整流二极管的阴极,第二框架的外置引脚为同步整流二极管的阳极,内置电容位于第二框架与第三框架间。如图4所示,当阴极电压大于阳极时内置电容充能为控制IC芯片供电;当控制IC芯片检测到元件端电压大于开通电压Von时,开通MOSFET芯片,当检测到元件端电压趋于零时,关闭MOSFET芯片。As described in Embodiment 1, the three-chip built-in capacitive synchronous rectification diode, the external pin of the first frame is the cathode of the synchronous rectification diode, the external pin of the second frame is the anode of the synchronous rectification diode, and the built-in capacitor is located at Between the second frame and the third frame. As shown in Figure 4, when the cathode voltage is greater than the anode, the built-in capacitor is charged to supply power to the control IC chip; when the control IC chip detects that the component terminal voltage is greater than the turn-on voltage Von, the MOSFET chip is turned on, and when the component terminal voltage is detected to be zero , turn off the MOSFET chip.
实施例4:Example 4:
三片式内置电容式同步整流二极管在正向整流应用、反向整流应用如图5、图6所示。在正向整流应用中,交流输入先经桥式整流电路,再经滤波、脉宽调制,由变压器变压,变压器的高压端连接三片式内置电容式同步整流二极管的阳极,再经稳压接负载。在反向整流应用中,交流输入先经桥式整流电路,再经滤波、脉宽调制,由变压器变压,变压器的低压端连接三片式内置电容式同步整流二极管的阴极,再经稳压接负载。Three-chip built-in capacitive synchronous rectification diodes are used in forward rectification and reverse rectification applications as shown in Figure 5 and Figure 6. In the application of forward rectification, the AC input first passes through the bridge rectifier circuit, and then is filtered and pulse width modulated, and transformed by the transformer. connected to the load. In the application of reverse rectification, the AC input first passes through the bridge rectifier circuit, then filtered, pulse width modulated, and then transformed by the transformer. connected to the load.
当然,以上说明仅仅为本实用新型的较佳实施例,本实用新型并不限于列举上述实施例,应当说明的是,任何熟悉本领域的技术人员在本说明书的指导下,所做出的所有等同替代、明显变形形式,均落在本说明书的实质范围之内,理应受到本实用新型的保护。Of course, the above descriptions are only preferred embodiments of the present invention, and the present invention is not limited to the above-mentioned embodiments. It should be noted that any person skilled in the art can make all the Equivalent substitutions and obvious deformation forms all fall within the essential scope of this specification and should be protected by the utility model.
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