CN212136441U - High-reliability bidirectional TVS diode - Google Patents
High-reliability bidirectional TVS diode Download PDFInfo
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- CN212136441U CN212136441U CN202021217733.8U CN202021217733U CN212136441U CN 212136441 U CN212136441 U CN 212136441U CN 202021217733 U CN202021217733 U CN 202021217733U CN 212136441 U CN212136441 U CN 212136441U
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- diode chip
- metal lead
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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Abstract
The utility model discloses a two-way TVS diode of high reliability, include: the first diode chip, the second diode chip, the first metal lead and the second metal lead are respectively positioned in the epoxy packaging body, the welding ends of the first metal lead and the second metal lead are respectively connected with the first diode chip and the second diode chip through the first welding sheet layer, and the anode of the first diode chip is electrically connected with the cathode of the second diode chip through the second welding sheet layer; the welding ends of the first metal lead and the second metal lead further comprise an end panel and a plurality of convex columns which are positioned on the surface of the end panel and distributed at intervals. The utility model discloses the two-way TVS diode of high reliability has effectively improved diode chip and metal lead's offset among the welding process, has avoided the rosin joint to improve the reliability of device and prolonged the life of chip.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a two-way TVS diode of high reliability.
Background
The tvs is a high-performance protection device in the form of a diode. When two poles of the TVS diode are impacted by reverse transient high energy, the TVS diode can change the high impedance between the two poles into low impedance at the speed of 10 minus 12 times of a second, absorb surge power of thousands of watts and clamp the voltage between the two poles at a preset value, thereby effectively protecting precise components in an electronic circuit from being damaged by various surge pulses.
Disclosure of Invention
The utility model aims at providing a two-way TVS diode of high reliability, this two-way TVS diode of high reliability has effectively improved diode chip and metal lead's skew in the welding process, has avoided the rosin joint to the reliability of device has been improved and the life of chip has been prolonged.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a high reliability bidirectional TVS diode, comprising: the first diode chip, the second diode chip, the first metal lead and the second metal lead are respectively positioned in the epoxy packaging body, the pin ends of the first metal lead and the second metal lead respectively extend out from two sides of the epoxy packaging body, the welding ends of the first metal lead and the second metal lead are respectively connected with the first diode chip and the second diode chip through the first welding sheet layer, and the homopolar end of the first diode chip and the homopolar end of the second diode chip are electrically connected through the second welding sheet layer;
the respective welding ends of the first metal lead and the second metal lead further comprise end face plates and a plurality of convex columns which are positioned on the surfaces of the end face plates and distributed at intervals, and the first welding sheet layer is positioned between the respective end face plates and convex columns of the first metal lead and the second metal lead and the first diode chip and the second diode chip.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the soldering lug layer is a tin layer or a silver layer.
2. In the above scheme, the area ratio of the respective areas of the first diode chip and the second diode chip to the respective areas of the first diode chip and the second diode chip is 10: 1 to 2.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the utility model discloses two-way TVS diode of high reliability, its positive pole of first diode chip is connected through the second soldering lug layer electricity with the negative pole of second diode chip; the welding ends of the first metal lead and the second metal lead further comprise end face plates and a plurality of protruding columns which are arranged on the surfaces of the end face plates at intervals, the first welding sheet layer is arranged between the end face plates and the protruding columns of the first metal lead and the second metal lead and between the first diode chip and the second diode chip, the position deviation of the diode chip and the metal leads in the welding process is effectively improved, the insufficient welding is avoided, the reliability of the device is improved, and the service life of the chip is prolonged.
Drawings
Fig. 1 is the utility model discloses two-way TVS diode structure schematic diagram of high reliability.
In the above drawings: 11. a first diode chip; 12. a second diode chip; 2. a first metal lead; 3. a second metal lead; 4. welding the end; 5. a pin end; 6. an epoxy package; 7. a first solder pad layer; 8. an end panel; 9. a convex column; 10. a second solder pad layer.
Detailed Description
Example 1: a high reliability bidirectional TVS diode, comprising: the LED package structure comprises a first diode chip 11, a second diode chip 12, a first metal lead 2 and a second metal lead 3, wherein the welding ends 4 of the first diode chip 11, the second diode chip 12 and the first metal lead 2 and the second metal lead 3 are respectively positioned in an epoxy package body 6, pin ends 5 of the first metal lead 2 and the second metal lead 3 respectively extend out from two sides of the epoxy package body 6, the welding ends 4 of the first metal lead 2 and the second metal lead 3 are respectively connected with the first diode chip 11 and the second diode chip 12 through a first welding sheet layer 7, and the homopolar ends of the first diode chip 11 and the second diode chip 12 are electrically connected through a second welding sheet layer 10;
the respective welding end 4 of the first metal lead 2 and the second metal lead 3 further comprises an end plate 8 and a plurality of protruding columns 9 which are located on the surface of the end plate 8 and distributed at intervals, and the 2 first bonding pad layers 7 are respectively located between the respective end plate 8 and protruding column 9 of the first metal lead 2 and the second metal lead 3 and the first diode chip 11 and the second diode chip 12.
The above-mentioned solder bump layer 7 is a tin layer.
The area ratio 10 between the respective areas of the first diode chip 11 and the second diode chip 12 and the respective areas of the first diode chip 11 and the second diode chip 12: 1.8.
example 2: a high reliability bidirectional TVS diode, comprising: the LED package structure comprises a first diode chip 11, a second diode chip 12, a first metal lead 2 and a second metal lead 3, wherein the welding ends 4 of the first diode chip 11, the second diode chip 12 and the first metal lead 2 and the second metal lead 3 are respectively positioned in an epoxy package body 6, pin ends 5 of the first metal lead 2 and the second metal lead 3 respectively extend out from two sides of the epoxy package body 6, the welding ends 4 of the first metal lead 2 and the second metal lead 3 are respectively connected with the first diode chip 11 and the second diode chip 12 through a first welding sheet layer 7, and the homopolar ends of the first diode chip 11 and the second diode chip 12 are electrically connected through a second welding sheet layer 10;
the respective welding end 4 of the first metal lead 2 and the second metal lead 3 further comprises an end plate 8 and a plurality of protruding columns 9 which are located on the surface of the end plate 8 and distributed at intervals, and the 2 first bonding pad layers 7 are respectively located between the respective end plate 8 and protruding column 9 of the first metal lead 2 and the second metal lead 3 and the first diode chip 11 and the second diode chip 12.
The solder layer 7 is a silver layer.
The area ratio 10 between the respective areas of the first diode chip 11 and the second diode chip 12 and the respective areas of the first diode chip 11 and the second diode chip 12: 1.2.
when the high-reliability bidirectional TVS diode is adopted, the anode of the first diode chip is electrically connected with the cathode of the second diode chip through the second soldering lug layer; the welding ends of the first metal lead and the second metal lead further comprise end face plates and a plurality of protruding columns which are arranged on the surfaces of the end face plates at intervals, the first welding sheet layer is arranged between the end face plates and the protruding columns of the first metal lead and the second metal lead and between the first diode chip and the second diode chip, the position deviation of the diode chip and the metal leads in the welding process is effectively improved, the insufficient welding is avoided, the reliability of the device is improved, and the service life of the chip is prolonged.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (3)
1. A kind of high reliability two-way TVS diode, characterized by: the method comprises the following steps: a first diode chip (11), a second diode chip (12), a first metal lead (2) and a second metal lead (3), the welding ends (4) of the first diode chip (11), the second diode chip (12) and the first metal lead (2) and the second metal lead (3) are all positioned in the epoxy packaging body (6), the pin ends (5) of the first metal lead (2) and the second metal lead (3) respectively extend out from two sides of the epoxy packaging body (6), the welding ends (4) of the first metal lead (2) and the second metal lead (3) are respectively connected with the first diode chip (11) and the second diode chip (12) through the first welding sheet layer (7), and the homopolar ends of the first diode chip (11) and the second diode chip (12) are electrically connected through the second welding sheet layer (10);
the respective welding end (4) of the first metal lead (2) and the second metal lead (3) further comprises an end plate (8) and a plurality of convex columns (9) which are arranged on the surface of the end plate (8) at intervals, and 2 first welding sheet layers (7) are respectively arranged between the respective end plate (8) of the first metal lead (2) and the second metal lead (3), the convex columns (9), the first diode chip (11) and the second diode chip (12).
2. The high reliability bidirectional TVS diode of claim 1, wherein: the soldering lug layer (7) is a tin layer or a silver layer.
3. The high reliability bidirectional TVS diode of claim 1, wherein: the area ratio of the respective areas of the first diode chip (11) and the second diode chip (12) to the respective areas of the first diode chip (11) and the second diode chip (12) is 10: 1 to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021217733.8U CN212136441U (en) | 2020-06-28 | 2020-06-28 | High-reliability bidirectional TVS diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021217733.8U CN212136441U (en) | 2020-06-28 | 2020-06-28 | High-reliability bidirectional TVS diode |
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| Publication Number | Publication Date |
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| CN212136441U true CN212136441U (en) | 2020-12-11 |
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| CN202021217733.8U Active CN212136441U (en) | 2020-06-28 | 2020-06-28 | High-reliability bidirectional TVS diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113488545A (en) * | 2021-05-31 | 2021-10-08 | 上海维攀微电子有限公司 | TVS protective device with failure breaking function |
-
2020
- 2020-06-28 CN CN202021217733.8U patent/CN212136441U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113488545A (en) * | 2021-05-31 | 2021-10-08 | 上海维攀微电子有限公司 | TVS protective device with failure breaking function |
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