CN210778581U - High-reliability transient voltage suppression diode - Google Patents
High-reliability transient voltage suppression diode Download PDFInfo
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- CN210778581U CN210778581U CN201922365847.0U CN201922365847U CN210778581U CN 210778581 U CN210778581 U CN 210778581U CN 201922365847 U CN201922365847 U CN 201922365847U CN 210778581 U CN210778581 U CN 210778581U
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- lead frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model discloses a high-reliability transient voltage suppression diode, including the integrated structure that first lead frame, second lead frame, first diode chip, second diode chip, first TVS chip and second TVS chip formed, first TVS chip bonds on the upper portion of first lead frame through conductive silver glue, and first diode chip bonds in the lower part of first lead frame through conductive silver glue, and second diode chip bonds in the upper portion of second lead frame through conductive silver glue, and second TVS chip bonds on the lower part of second lead frame through conductive silver glue; the first TVS chip and the second diode chip are connected through a first gold wire, and the first diode chip and the second TVS chip are connected through a second gold wire; the integrated structure is encapsulated in an epoxy encapsulant. The transient voltage suppression diode not only has a bidirectional protection function, but also can adapt to a very harsh use environment, and the use range of the device is greatly widened.
Description
Technical Field
The utility model relates to an electronic components technical field, in particular to transient voltage who high reliability restraines diode.
Background
A Transient Voltage Suppressor (TVS) is a diode-type high-efficiency overvoltage protection device. When two poles of the TVS tube are impacted by reverse transient high energy, the TVS tube can change the high resistance between the two poles into low resistance at the speed of picosecond magnitude, discharge surge power, clamp the voltage between the two poles on a preset value, and effectively protect precise components in an electronic circuit from being impacted and damaged by various surges and static electricity. The method is widely applied to the fields of computer systems, communication equipment, instruments, high-speed transmission lines and the like.
The existing known transient voltage suppression diode is generally suitable for the fields of industry and consumption, and has the problem of insufficient reliability in severe use environment.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, an object of the present invention is to provide a high-reliability transient voltage suppression diode, which not only has a bidirectional protection function, but also can adapt to a very harsh environment, and greatly broadens the application range of such devices.
For realizing above-mentioned technical purpose, reach above-mentioned technological effect, the utility model discloses a following technical scheme realizes:
a high-reliability transient voltage suppression diode comprises a first lead frame, a second lead frame, a first diode chip, a second diode chip, a first TVS chip and a second TVS chip, wherein the first TVS chip is bonded on the upper portion of the first lead frame through conductive silver paste; the first TVS chip and the second diode chip are connected through a first gold wire, and the first diode chip and the second TVS chip are connected through a second gold wire; an integrated structure is formed among the first lead frame, the second lead frame, the first diode chip, the second diode chip, the first TVS chip and the second TVS chip, and the integrated structure is packaged in the epoxy plastic package; the first lead frame and the second lead frame are symmetrically arranged in the epoxy plastic package body.
As the utility model discloses technical scheme's further improvement, first lead frame has the first pin that exposes in the epoxy plastic-sealed body, and second lead frame has the second pin that exposes in the epoxy plastic-sealed body.
As the utility model discloses technical scheme's further improvement, the surface of first pin and the surface of second pin all pass through tin-plating.
As the utility model discloses technical scheme's further improvement, this transient voltage restraines diode when using, first pin and VCC line connection, second pin and GND line connection.
As the utility model discloses technical scheme's further improvement, first lead frame and second lead frame are T shape structure.
As the utility model discloses technical scheme's further improvement, first lead frame and second lead frame are the copper frame.
The utility model has the advantages that: the utility model discloses a two-way path is constituteed to 2 low-capacity rectifier diode chips and 2 TVS chips, and low-capacity rectifier diode series connection TVS pipe to make the device still keep lower capacitance value in the time through great energy, can carry out the surge protection to the high-speed signal port, it has the high reliability of normal work under the harsh environment simultaneously, can and be not limited to and use in various fields such as military project, car.
Drawings
Fig. 1 is a schematic view of the internal structure of the present invention.
Fig. 2 is a schematic diagram of the external structure of the present invention.
Fig. 3 is a schematic circuit diagram of the present invention.
Fig. 4 is a schematic view of the application of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention will be provided in conjunction with the accompanying drawings, so as to enable those skilled in the art to more easily understand the advantages and features of the present invention, and thereby define the scope of the invention more clearly and clearly.
The preferred embodiment of the high reliability tvs shown in fig. 1-4. The transient voltage suppression diode comprises a first lead frame 1, a second lead frame 2, a first diode chip 3, a second diode chip 4, a first TVS chip 5 and a second TVS chip 6, wherein the first TVS chip 5 is bonded on the upper part of the first lead frame 1 through conductive silver paste, the first diode chip 3 is bonded on the lower part of the first lead frame 1 through conductive silver paste, the second diode chip 4 is bonded on the upper part of the second lead frame 2 through conductive silver paste, and the second TVS chip 6 is bonded on the lower part of the second lead frame 2 through conductive silver paste; the first TVS chip 5 is connected with the second diode chip 4 through a first gold wire 8, and the first diode chip 3 is connected with the second TVS chip 6 through a second gold wire 9; an integrated structure is formed among the first lead frame 1, the second lead frame 2, the first diode chip 3, the second diode chip 4, the first TVS chip 5 and the second TVS chip 6, and the integrated structure is packaged in an epoxy plastic package body 7; the first lead frame 1 and the second lead frame 2 are symmetrically arranged in the epoxy plastic package body 7.
Further, the first lead frame 1 has a first lead 101 exposed to the epoxy molding compound 7, and the second lead frame 2 has a second lead 201 exposed to the epoxy molding compound 7. Furthermore, the surface of the first pin 101 and the surface of the second pin 201 are both subjected to tin plating; the first lead frame 1 and the second lead frame 2 are both T-shaped structures.
When the chips (the diode chip and the TVS chip) are manufactured, the thickness of the base region is adjusted by adopting thinning, high-energy ion injection and a 1300 ℃ ultra-high temperature deep junction process, the efficiency of current carriers penetrating from the emitter to the base region to the collector region is improved, and the conductive capability can be effectively enhanced.
Furthermore, the first TVS chip 5 and the second diode chip 4, and the first diode chip 3 and the second TVS chip 6 are connected by gold wires. The gold wire has high conductivity, is not easy to age, and can ensure the long-time normal work of the device.
The first lead frame 1 and the second lead frame 2 are both copper frames. Furthermore, the utility model discloses an epoxy plastic-sealed body 7 encapsulates. The epoxy plastic package body is matched with the copper frame, so that the thermal matching coefficient of the epoxy plastic package body and the copper frame can reach 2: 1, even lower, can very big reduction raw and other materials coefficient of expansion mismatch the influence that causes the device, simultaneously through appropriate screening test condition, can reject the device that has the potential hidden danger, reach the required high reliability requirement of harsh service environment.
The circuit shown in fig. 3, wherein 2 low-capacitance rectifier diode chips (the first diode chip and the second diode chip) and 2 TVS chips (the first TVS chip and the second TVS chip) constitute a bidirectional path, and the low-capacitance rectifier diodes are connected in series with the TVS.
In addition, as shown in fig. 4, when the tvs are in use, the first pin 101 is connected to the VCC line 10, and the second pin 201 is connected to the GND line 11, so as to perform a protection function.
The utility model discloses a transient voltage restraines diode has the negative resistance characteristic, and is strong to back level device protective capability, can carry out the surge protection to high-speed signal port, and it has the high reliability of normal work under the harsh environment simultaneously, can and be not limited to and use in various fields such as military project, car.
The above only is the embodiment of the present invention, not limiting the patent scope of the present invention, all the equivalent structures or equivalent processes that are used in the specification and the attached drawings or directly or indirectly applied to other related technical fields are included in the patent protection scope of the present invention.
Claims (6)
1. A high reliability transient voltage suppressor diode, characterized by: the device comprises a first lead frame, a second lead frame, a first diode chip, a second diode chip, a first TVS chip and a second TVS chip, wherein the first TVS chip is bonded on the upper part of the first lead frame through conductive silver paste; the first TVS chip and the second diode chip are connected through a first gold wire, and the first diode chip and the second TVS chip are connected through a second gold wire; an integrated structure is formed among the first lead frame, the second lead frame, the first diode chip, the second diode chip, the first TVS chip and the second TVS chip, and the integrated structure is packaged in the epoxy plastic package; the first lead frame and the second lead frame are symmetrically arranged in the epoxy plastic package body.
2. A high reliability tvs diode according to claim 1, wherein: the first lead frame is provided with a first pin exposed out of the epoxy plastic package body, and the second lead frame is provided with a second pin exposed out of the epoxy plastic package body.
3. A high reliability tvs diode according to claim 2, wherein: the surfaces of the first pin and the second pin are both subjected to tin plating treatment.
4. A high reliability tvs diode according to claim 1, wherein: when the transient voltage suppression diode is used, the first pin is connected with a VCC line, and the second pin is connected with a GND line.
5. A high reliability tvs diode according to claim 1, wherein: the first lead frame and the second lead frame are both T-shaped structures.
6. A high reliability tvs diode according to claim 1, wherein: the first lead frame and the second lead frame are both copper frames.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922365847.0U CN210778581U (en) | 2019-12-25 | 2019-12-25 | High-reliability transient voltage suppression diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922365847.0U CN210778581U (en) | 2019-12-25 | 2019-12-25 | High-reliability transient voltage suppression diode |
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| Publication Number | Publication Date |
|---|---|
| CN210778581U true CN210778581U (en) | 2020-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201922365847.0U Active CN210778581U (en) | 2019-12-25 | 2019-12-25 | High-reliability transient voltage suppression diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200294992A1 (en) * | 2017-12-07 | 2020-09-17 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (esd) protection circuit, integrated circuit and method for esd protection thereof |
-
2019
- 2019-12-25 CN CN201922365847.0U patent/CN210778581U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200294992A1 (en) * | 2017-12-07 | 2020-09-17 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (esd) protection circuit, integrated circuit and method for esd protection thereof |
| US11569222B2 (en) * | 2017-12-07 | 2023-01-31 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (ESD) protection circuit, integrated circuit and method for ESD protection thereof |
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