CN204792767U - Diode power module - Google Patents
Diode power module Download PDFInfo
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- CN204792767U CN204792767U CN201520286782.XU CN201520286782U CN204792767U CN 204792767 U CN204792767 U CN 204792767U CN 201520286782 U CN201520286782 U CN 201520286782U CN 204792767 U CN204792767 U CN 204792767U
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- aluminium strip
- diode
- ceramic base
- power module
- copper
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Abstract
Diode power module, it mainly includes: semiconductor chip, metallization ceramic base, the aluminium strip, radiating basal plate and shell, the diode chip pass through the solder weld the metallization ceramic base the positive pole on, to pass through the positive pole of aluminium strip and diode chip continuous for ceramic base's positive pole copper layer to use the ultrasonic wave bonded to metallize, on radiating basal plate is welded through the solder in metallization ceramic base's back copper layer, metallization ceramic base make through metallization ceramic technology by first copper surface, middle ceramic layer and second copper surface, the soft attitude aluminium strip of aluminium strip for making with continuous casting -rolling technology, radiating basal plate adheres with the shell through sealed glue, soft attitude aluminium strip use the surface of ultrasonic wave bonding method welding at semiconductor chip, it has simple structure, encapsulates of high qualityly, can ensure and encapsulation and technology and requirement improve characteristics such as reliability and overcurrent ability greatly.
Description
Technical field
The utility model relates to a kind of diode power module, belong to semiconductor power device encapsulation technology field.
Background technology
In conventional power devices packaging technology, general use wire bonding (Wirebonding) or copper strips bonding (ClipBonding or be called CopperStrapAttachment) technology, but in order to the package dimension that reduces power device further and obtain lower conducting resistance, some company starts to attempt using aluminium strip bonding techniques in power device package technique, particularly in the power device of small package size, such as SO-8, PQFN etc.
Power model is the semiconductor package body used on power electronic circuit, such as, encapsulates igbt (IGBT) chip, or the module of mos field effect transistor (MOSFET) chip.Some modules are also packaged with semiconductor diode (DIODE) chip to provide overvoltage protection.Above power semiconductor chip has series of voltage and current class, to adapt to different occasions or sector application.
Because the thermal coefficient of expansion of power semiconductor chip and the thermal coefficient of expansion of bonding line differ comparatively large, the inefficacy that power model the most easily produces in Long-Time Service process is that bonding point and chip surface depart from; The continuous increase of conductor power chips current density simultaneously, traditional aluminum steel can not meet the requirement of electrical connection.
Ultrasonic bonding is one of key technology realizing the interconnection of integrated antenna package chips.There are three kinds of methods can realize the electric interconnection of chip in present integrated circuit (IC) encapsulation: flip-chip, carrier band automatic welding and wire bonding.
Utility model content
The purpose of this utility model is the deficiency overcoming prior art existence, and provides a kind of structure simple, and package quality is good, can ensure and encapsulation and technique and requirement substantially increase the diode power module of reliability and overcurrent capability.
The purpose of this utility model has been come by following technical solution, a kind of diode power module, and it mainly comprises: semiconductor chip, metalizing ceramic substrate, aluminium strip, heat-radiating substrate and shell, described diode chip for backlight unit is welded on the anode of metalizing ceramic substrate by solder; Supersonic bonding is used the anode layers of copper of metalizing ceramic substrate to be connected with the anode of diode chip for backlight unit by aluminium strip; The back side layers of copper of described metalizing ceramic substrate is welded on heat-radiating substrate by solder.
Described metalizing ceramic substrate is made up by metallized ceramic technique of the first bronze medal surface, intermediate ceramic layer and the second bronze medal surface, and described aluminium strip is the soft state aluminium strip made by continuous casting and rolling technique; Heat-radiating substrate is bonded by fluid sealant and shell.
Described soft state aluminium strip uses ultrasonic bonding method to be welded on the surface of semiconductor chip.
Along with the ever-smaller of semiconductor package size, the crude aluminum line bonding techniques be widely used on high power device is no longer unique selection.Aluminium strip bonding breaches the restriction of package dimension, achieves intensity and the performance advantage of bonding technology in low-power device encapsulation.Aluminium strip bonding provides the technical substitution of an almost Perfect, and more attractive than prior art.In bonding quality, technological ability and designing requirement etc., bonding aluminium strip is all better than traditional bonding aluminum steel.
Owing to employing ultrasonic welding technique and bonding aluminium strip, substantially increase reliability and overcurrent capability; Breadth length ratio is aluminum steel or 8 copper cash that the aluminum strip band of 10:1 can replace 12 wire diameters suitable for its thickness.
The utility model is a kind of diode power module based on aluminium strip supersonic bonding, and have structure simple, package quality is good, can ensure encapsulation and technique and requirement, substantially increase the feature such as reliability and overcurrent capability.
Accompanying drawing explanation
Fig. 1 is the plan structure schematic diagram of module described in the utility model.
Fig. 2 is the sectional structure schematic diagram of module described in the utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail: be coated with shown in 1,2, a kind of diode power module described in the utility model, it mainly comprises: semiconductor chip 2, metalizing ceramic substrate, aluminium strip 1, heat-radiating substrate 5 and shell 9, described diode chip for backlight unit 2 is welded on the anode 3 of metalizing ceramic substrate by solder 4; Supersonic bonding is used the anode layers of copper 6 of metalizing ceramic substrate to be connected by the anode of aluminium strip 1 with diode chip for backlight unit 2; The back side layers of copper 10 of described metalizing ceramic substrate passes through solder) be welded on heat-radiating substrate 5.
Metalizing ceramic substrate described in the utility model is made up by metallized ceramic technique of the first bronze medal surface, intermediate ceramic layer and the second bronze medal surface, and described aluminium strip 1 is the soft state aluminium strip made by continuous casting and rolling technique; Heat-radiating substrate 5 is bonded by fluid sealant 7 and shell 9.
Described soft state aluminium strip uses ultrasonic bonding method to be welded on the surface of semiconductor chip.
Embodiment: diode chip for backlight unit 2 described in the utility model is welded on the anode 3 of DBC by solder 4, uses supersonic bonding the anode layers of copper 6 of DBC to be connected with diode chip for backlight unit anode by aluminium strip 1.The back side layers of copper 10 of DBC is welded on heat-radiating substrate 5 by solder 8.Plastic casing 9 and heat-radiating substrate 5 are bonded by fluid sealant 7.Described DBC be make with Direct Bonding process for copper cover copper ceramic substrate.
Claims (3)
1. diode power module, it mainly comprises: semiconductor chip, metalizing ceramic substrate, aluminium strip, heat-radiating substrate and shell, it is characterized in that described diode chip for backlight unit (2) is welded on the anode (3) of metalizing ceramic substrate by solder (4); Supersonic bonding is used the anode layers of copper (6) of metalizing ceramic substrate to be connected with the anode of diode chip for backlight unit by aluminium strip (1); The back side layers of copper (10) of described metalizing ceramic substrate is welded on heat-radiating substrate (5) by solder (8).
2. diode power module according to claim 1, it is characterized in that described metalizing ceramic substrate is made up by metallized ceramic technique of the first bronze medal surface, intermediate ceramic layer and the second bronze medal surface, described aluminium strip is the soft state aluminium strip made by continuous casting and rolling technique; Heat-radiating substrate (5) is bonded by fluid sealant (7) and shell (9).
3. diode power module according to claim 2, is characterized in that described soft state aluminium strip uses ultrasonic bonding method to be welded on the surface of semiconductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520286782.XU CN204792767U (en) | 2015-05-06 | 2015-05-06 | Diode power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520286782.XU CN204792767U (en) | 2015-05-06 | 2015-05-06 | Diode power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204792767U true CN204792767U (en) | 2015-11-18 |
Family
ID=54532762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520286782.XU Active CN204792767U (en) | 2015-05-06 | 2015-05-06 | Diode power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204792767U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867897A (en) * | 2015-05-06 | 2015-08-26 | 嘉兴斯达微电子有限公司 | Diode power module |
-
2015
- 2015-05-06 CN CN201520286782.XU patent/CN204792767U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104867897A (en) * | 2015-05-06 | 2015-08-26 | 嘉兴斯达微电子有限公司 | Diode power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171220 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR LTD. Address before: Jiaxing City, Zhejiang province 314006 Ring Road No. 18 Sidalu Patentee before: Jiaxing Starpower Microelectronics Co., Ltd. |