CN212811289U - TVS overvoltage protection device - Google Patents

TVS overvoltage protection device Download PDF

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Publication number
CN212811289U
CN212811289U CN202021859269.2U CN202021859269U CN212811289U CN 212811289 U CN212811289 U CN 212811289U CN 202021859269 U CN202021859269 U CN 202021859269U CN 212811289 U CN212811289 U CN 212811289U
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CN
China
Prior art keywords
lead
diode chip
suppression diode
transient suppression
strip
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CN202021859269.2U
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Chinese (zh)
Inventor
唐兴军
王亚
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Suzhou Xingtechnetium Electronics Co ltd
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Suzhou Xingtechnetium Electronics Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Thermistors And Varistors (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The utility model discloses a TVS overvoltage protection device, including first transient state suppression diode chip, second transient state suppression diode chip, first lead wire strip and second lead wire strip, the both ends of first lead wire strip are supporting part and first lead part respectively, first transient state suppression diode chip, the range upon range of setting of second transient state suppression diode chip and the negative pole of first transient state suppression diode chip, the positive pole of second transient state suppression diode chip pass through the metal bonding layer electricity and connect; the edge of the welding part of the second lead strip is provided with at least 1 second through hole, and the edge of the second through hole is provided with a second flanging part which is opposite to the first transient suppression diode chip; and the second bending part of the second lead strip and the first bending part of the first lead strip are both provided with a third through hole. The utility model discloses when protecting the accurate components and parts in the electronic circuit effectively, avoided the soldering paste to spill over rosin joint and the area of contact that leads to and reduce to the life of device has been improved.

Description

TVS overvoltage protection device
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a TVS overvoltage protection device.
Background
The Transient Voltage Suppressor (TVS) is a solid semiconductor device specially designed for protecting sensitive semiconductor devices from transient voltage surge damage, and has the advantages of small clamping coefficient, small size, fast response, small leakage current, high reliability and the like, thus being widely applied to voltage transient and surge protection.
Disclosure of Invention
The utility model aims at providing a TVS overvoltage protection device, this TVS overvoltage protection device protects the accurate components and parts in the electronic circuit effectively, when avoiding various surge pulse's damage, has avoided the solder paste to spill over rosin joint and the area of contact that leads to and has reduced to the life of device has been improved.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a TVS overvoltage protection device comprises a first transient suppression diode chip, a second transient suppression diode chip, a first lead bar and a second lead bar, wherein two ends of the first lead bar are respectively a support part and a first pin part, a first bending part is arranged between the support part and the first pin part of the first lead bar, two ends of the second lead bar are respectively a welding part and a second pin part, a second bending part is arranged between the welding part and the second pin part of the second lead bar, an epoxy packaging body is coated on the first transient suppression diode chip, the second transient suppression diode chip, the support part of the first lead bar and the welding part of the second lead bar, an anode of the first transient suppression diode chip and a cathode of the second transient suppression diode chip are respectively and electrically connected with the support part of the first lead bar and the welding part of the second lead bar, the first transient suppression diode chip and the second transient suppression diode chip are stacked, and the cathode of the first transient suppression diode chip and the anode of the second transient suppression diode chip are electrically connected through a metal welding layer;
the edge of the supporting part of the first lead strip is provided with at least 2 first through holes, the edge of each first through hole is provided with a first flanging part opposite to the first transient suppression diode chip, the edge of the welding part of the second lead strip is provided with at least 1 second through hole, and the edge of each second through hole is provided with a second flanging part opposite to the first transient suppression diode chip; and the second bending part of the second lead strip and the first bending part of the first lead strip are both provided with a third through hole.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the first lead part of the first lead strip and the second lead part of the second lead strip extend out from the left end and the right end of the epoxy encapsulation body respectively.
2. In the above scheme, the metal welding layer is a metal tin layer or a metal silver layer.
3. In the above scheme, the third through hole is a circular through hole.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the TVS overvoltage protection device of the utility model can instantly change the high impedance between the two poles into low impedance when being impacted by reverse transient high energy, effectively protect the precise components in the electronic circuit from being damaged by various surge pulses, the edge of the supporting part of the first lead strip is provided with at least 2 first through holes, the edge of the first through hole is provided with a first flanging part which is opposite to the first transient suppression diode chip, the edge of the welding part of the second lead strip is provided with at least 1 second through hole, the edge of the second through hole is provided with a second flanging part which is opposite to the first transient suppression diode chip, so that the cold joint and the contact area reduction caused by the overflow of the soldering paste are avoided, the electrical contact performance and the flatness of the supporting part and the welding part of the lead strip and the first transient suppression diode chip are greatly improved, and the service life of the device is prolonged; in addition, the edge of the through hole of the lead line is provided with a flanging part, which is beneficial to further reducing the contact resistance, thereby further improving the stability of the device.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of the TVS overvoltage protection device of the present invention;
fig. 2 is a schematic sectional structure view of fig. 1.
In the above drawings: 1. a first transient suppression diode chip; 2. a first lead strip; 21. a support portion; 22. a first lead part; 23. a first bending portion; 3. a second lead strip; 31. welding the part; 32. a second lead portion; 33. a second bending portion; 4. an epoxy package; 5. a first through hole; 6. a first burring; 7. a second through hole; 8. a second burring; 9. a solder layer; 10. a second transient suppression diode chip; 11. a metal solder layer; 12. a third via.
Detailed Description
Example 1: a TVS overvoltage protection device comprises a first transient suppression diode chip 1, a second transient suppression diode chip 10, a first lead bar 2 and a second lead bar 3, wherein two ends of the first lead bar 2 are respectively a support part 21 and a first lead part 22, a first bending part 23 is arranged between the support part 21 and the first lead part 22 of the first lead bar 2, two ends of the second lead bar 3 are respectively a welding part 31 and a second lead part 32, a second bending part 33 is arranged between the welding part 31 and the second lead part 32 of the second lead bar 3, an epoxy package 4 is coated on the first transient suppression diode chip 1, the second transient suppression diode chip 10, the support part 21 of the first lead bar 2 and the welding part 31 of the second lead bar 3, and the anode of the first transient suppression diode chip 1 and the cathode of the second transient suppression diode chip 10 are respectively electrically connected with the support part 21 of the first lead bar 2 and the welding part 31 of the second lead bar 3 The first transient suppression diode chip 1 and the second transient suppression diode chip 10 are stacked, and the cathode of the first transient suppression diode chip 1 and the anode of the second transient suppression diode chip 10 are electrically connected through a metal welding layer 11;
the edge of the supporting part 21 of the first lead bar 2 is provided with at least 2 first through holes 5, the edge of each first through hole 5 is provided with a first flanging part 6 opposite to the first transient suppression diode chip 1, the edge of the welding part 31 of the second lead bar 3 is provided with at least 1 second through hole 7, and the edge of each second through hole is provided with a second flanging part 8 opposite to the first transient suppression diode chip 1; and the second bending part 33 of the second lead strip 3 and the first bending part 23 of the first lead strip 2 are both provided with a third through hole 12.
The metal welding layer 11 is a metal silver layer, and the third through hole 12 is a circular through hole.
Example 2: a TVS overvoltage protection device comprises a first transient suppression diode chip 1, a second transient suppression diode chip 10, a first lead bar 2 and a second lead bar 3, wherein two ends of the first lead bar 2 are respectively a support part 21 and a first lead part 22, a first bending part 23 is arranged between the support part 21 and the first lead part 22 of the first lead bar 2, two ends of the second lead bar 3 are respectively a welding part 31 and a second lead part 32, a second bending part 33 is arranged between the welding part 31 and the second lead part 32 of the second lead bar 3, an epoxy package 4 is coated on the first transient suppression diode chip 1, the second transient suppression diode chip 10, the support part 21 of the first lead bar 2 and the welding part 31 of the second lead bar 3, and the anode of the first transient suppression diode chip 1 and the cathode of the second transient suppression diode chip 10 are respectively electrically connected with the support part 21 of the first lead bar 2 and the welding part 31 of the second lead bar 3 The first transient suppression diode chip 1 and the second transient suppression diode chip 10 are stacked, and the cathode of the first transient suppression diode chip 1 and the anode of the second transient suppression diode chip 10 are electrically connected through a metal welding layer 11;
the edge of the supporting part 21 of the first lead bar 2 is provided with at least 2 first through holes 5, the edge of each first through hole 5 is provided with a first flanging part 6 opposite to the first transient suppression diode chip 1, the edge of the welding part 31 of the second lead bar 3 is provided with at least 1 second through hole 7, and the edge of each second through hole is provided with a second flanging part 8 opposite to the first transient suppression diode chip 1; and the second bending part 33 of the second lead strip 3 and the first bending part 23 of the first lead strip 2 are both provided with a third through hole 12.
The first lead portion 22 of the first lead bar 2 and the second lead portion 32 of the second lead bar 3 extend from the left and right ends of the epoxy package 4, respectively.
The metal solder layer 11 is a metallic tin layer.
When the TVS overvoltage protection device is adopted, the high impedance between the two poles of the TVS overvoltage protection device can be instantly changed into low impedance when the TVS overvoltage protection device is impacted by reverse transient high energy, thereby effectively protecting precise components in an electronic circuit from being damaged by various surge pulses, the edge of the supporting part of the first lead strip is provided with at least 2 first through holes, the edge of the first through hole is provided with a first flanging part which is opposite to the first transient suppression diode chip, the edge of the welding part of the second lead strip is provided with at least 1 second through hole, the edge of the second through hole is provided with a second flanging part which is opposite to the first transient suppression diode chip, so that the cold joint and the contact area reduction caused by the overflow of the soldering paste are avoided, the electrical contact performance and the flatness of the supporting part and the welding part of the lead strip and the first transient suppression diode chip are greatly improved, and the service life of the device is prolonged; in addition, the edge of the through hole of the lead line is provided with a flanging part, which is beneficial to further reducing the contact resistance, thereby further improving the stability of the device.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims (4)

1. A TVS overvoltage protection device, characterized in that: the LED packaging structure comprises a first transient suppression diode chip (1), a second transient suppression diode chip (10), a first lead strip (2) and a second lead strip (3), wherein two ends of the first lead strip (2) are respectively a support part (21) and a first lead part (22), a first bending part (23) is arranged between the support part (21) of the first lead strip (2) and the first lead part (22), two ends of the second lead strip (3) are respectively a welding part (31) and a second lead part (32), a second bending part (33) is arranged between the welding part (31) of the second lead strip (3) and the second lead part (32), and an epoxy packaging body (4) is coated on the first transient suppression diode chip (1), the second transient suppression diode chip (10), the support part (21) of the first lead strip (2) and the welding part (31) of the second lead strip (3), the anode of the first transient suppression diode chip (1) and the cathode of the second transient suppression diode chip (10) are respectively and electrically connected with the supporting part (21) of the first lead bar (2) and the welding part (31) of the second lead bar (3), the first transient suppression diode chip (1) and the second transient suppression diode chip (10) are arranged in a stacked mode, and the cathode of the first transient suppression diode chip (1) and the anode of the second transient suppression diode chip (10) are electrically connected through the metal welding layer (11);
the edge of the supporting part (21) of the first lead strip (2) is provided with at least 2 first through holes (5), the edge of each first through hole (5) is provided with a first flanging part (6) opposite to the first transient suppression diode chip (1), the edge of the welding part (31) of the second lead strip (3) is provided with at least 1 second through hole (7), and the edge of each second through hole is provided with a second flanging part (8) opposite to the first transient suppression diode chip (1);
and a third through hole (12) is formed in the second bending part (33) of the second lead bar (3) and the first bending part (23) of the first lead bar (2).
2. The TVS overvoltage protection device of claim 1, wherein: and a first lead part (22) of the first lead strip (2) and a second lead part (32) of the second lead strip (3) respectively extend out from the left end and the right end of the epoxy packaging body (4).
3. The TVS overvoltage protection device of claim 1, wherein: the metal welding layer (11) is a metal tin layer or a metal silver layer.
4. The TVS overvoltage protection device of claim 1, wherein: the third through hole (12) is a circular through hole.
CN202021859269.2U 2020-08-31 2020-08-31 TVS overvoltage protection device Active CN212811289U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021859269.2U CN212811289U (en) 2020-08-31 2020-08-31 TVS overvoltage protection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021859269.2U CN212811289U (en) 2020-08-31 2020-08-31 TVS overvoltage protection device

Publications (1)

Publication Number Publication Date
CN212811289U true CN212811289U (en) 2021-03-26

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ID=75087918

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202021859269.2U Active CN212811289U (en) 2020-08-31 2020-08-31 TVS overvoltage protection device

Country Status (1)

Country Link
CN (1) CN212811289U (en)

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