CN211957632U - Rectifier bridge stack device - Google Patents

Rectifier bridge stack device Download PDF

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Publication number
CN211957632U
CN211957632U CN202020811723.0U CN202020811723U CN211957632U CN 211957632 U CN211957632 U CN 211957632U CN 202020811723 U CN202020811723 U CN 202020811723U CN 211957632 U CN211957632 U CN 211957632U
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China
Prior art keywords
lead
strip
welding
edge
parts
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Active
Application number
CN202020811723.0U
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Chinese (zh)
Inventor
唐兴军
王亚
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Suzhou Xingtechnetium Electronics Co ltd
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Suzhou Xingtechnetium Electronics Co ltd
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Priority to CN202020811723.0U priority Critical patent/CN211957632U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Rectifiers (AREA)

Abstract

The utility model discloses a rectifier bridge pile device, a first bending part is arranged between the supporting part of the first lead wire strip and the AC pin part, the upper end and the lower end of the second lead wire strip are respectively a welding part and a DC pin part, the number of the welding parts of each second lead wire strip is 2, and four diode chips are respectively positioned between 4 supporting parts of 2 first lead wire strips and 4 welding parts of 2 second lead wire strips; the edge of each supporting part of the first lead strip is provided with at least 2 first through holes, the edge of each first through hole is provided with a first flanging part opposite to the diode chip, the edge of each welding part of the second lead strip is provided with at least 2 second through holes, and the edge of each second through hole is provided with a second flanging part opposite to the diode chip. The utility model discloses rectifier bridge piles device has avoided the soldering paste to spill over rosin joint and the area of contact that leads to and has reduced to improve the life of device, be favorable to further reducing contact resistance.

Description

Rectifier bridge stack device
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a rectifier bridge piles device.
Background
Rectifier bridge rectifier device product structure is that the P utmost point of two chips in four PN junction diode chips and the N utmost point of two chips are arranged in on the connection frame, with the connection frame of two different diode chips of polarity of bridging piece bridging respectively of the same shape and input, along with the miniaturized development trend of product circuit board, require SMD bridge rectifier to be satisfying under the prerequisite of small volume, realize high-power simultaneously, current rectifier bridge rectifier device adopts the formula structure of taking a bet mostly, its pin adopts "Z" style of calligraphy pin structure, but this kind of structure exists the rosin joint and the area of contact reduction that easy soldering paste spills over and lead to, thereby influence the life of device. How to overcome the above technical problems has been the direction of efforts of those skilled in the art.
Disclosure of Invention
The utility model aims at providing a rectifier bridge piles device, this rectifier bridge piles device has avoided the soldering paste to spill over rosin joint and the area of contact that leads to and reduce to improve the life of device, be favorable to further reducing contact resistance.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a bridge rectifier device comprises four diode chips, 2 first lead strips and 2 second lead strips, the upper end and the lower end of each first lead strip are respectively provided with a supporting part and an alternating current lead part, the number of the supporting parts of each first lead strip is 2, a first bending part is arranged between the supporting part of the first lead strip and the alternating current pin part, the upper end and the lower end of the second lead strip are respectively provided with a welding part and a direct current pin part, the number of the welding parts of each second lead strip is 2, a second bending part is arranged between the welding part of the second lead strip and the direct current pin part, an epoxy packaging body is coated on the four diode chips, the supporting part of the first lead strip and the welding part of the second lead strip, the four diode chips are respectively positioned between 4 supporting parts of the 2 first lead strips and 4 welding parts of the 2 second lead strips;
the edge of each supporting part of the first lead strip is provided with at least 2 first through holes, the edge of each first through hole is provided with a first flanging part opposite to the diode chip, the edge of each welding part of the second lead strip is provided with at least 2 second through holes, and the edge of each second through hole is provided with a second flanging part opposite to the diode chip.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the lower end of the diode chip is electrically connected with the support part of the first lead bar through the soldering tin layer.
2. In the above scheme, the upper end of the diode chip is electrically connected with the welding part of the second lead bar through the soldering tin layer.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the utility model discloses rectifier bridge piles device, the edge of every supporting part of its first lead wire strip is opened has 2 at least first through-holes, and the edge of this first through-hole has the first turn-ups portion that carries on the back with the diode chip mutually, the edge of every weld part of second lead wire strip is opened has 2 at least second through-holes, and the edge of this second through-hole has the second turn-ups portion that carries on the back with the diode chip mutually, has avoided the false solder that the solder paste spills over and has leaded to and area of contact reduction, has improved the supporting part of lead wire strip and weld part and diode chip electrical contact property and roughness greatly to the life of device has been improved; in addition, the edge of the through hole of the lead line is provided with a flanging part, which is beneficial to further reducing the contact resistance, thereby further improving the stability of the device.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional structure of a rectifier bridge stack device of the present invention;
figure 2 is the utility model discloses the inside structure schematic that looks sideways at of rectifier bridge heap device.
In the above drawings: 1. a diode chip; 2. a first lead strip; 21. a support portion; 22. a first lead part; 23. a first bending portion; 3. a second lead strip; 31. welding the part; 32. a second lead portion; 33. a second bending portion; 4. an epoxy package; 5. a first through hole; 6. a first burring; 7. a second through hole; 8. a second burring; 9. and a solder layer.
Detailed Description
Example 1: a rectifier bridge stack device comprises four diode chips 1, 2 first lead bars 2 and 2 second lead bars 3, wherein the upper end and the lower end of each first lead bar 2 are respectively a support part 21 and an alternating current lead part 22, the number of the support parts 21 of each first lead bar 2 is 2, a first bending part 23 is arranged between the support part 21 of each first lead bar 2 and the alternating current lead part 22, the upper end and the lower end of each second lead bar 3 are respectively a welding part 31 and a direct current lead part 32, the number of the welding parts 31 of each second lead bar 3 is 2, a second bending part 33 is arranged between the welding part 31 of each second lead bar 3 and the direct current lead part 32, an epoxy package 4 is wrapped on the welding parts 31 of the four diode chips 1, the support parts 21 of the first lead bars 2 and the welding parts 31 of the second lead bars 3, the four diode chips 1 are respectively arranged between the 4 support parts 21 of the 2 first lead bars 2 and the 4 welding parts 31 of the 2 second lead bars 3 (ii) a
The edge of each support part 21 of the first lead bar 2 is provided with at least 2 first through holes 5, the edge of each first through hole 5 is provided with a first flanging part 6 opposite to the diode chip 1, the edge of each welding part 31 of the second lead bar 3 is provided with at least 2 second through holes 7, and the edge of each second through hole is provided with a second flanging part 8 opposite to the diode chip 1.
Example 2: a rectifier bridge stack device comprises four diode chips 1, 2 first lead bars 2 and 2 second lead bars 3, wherein the upper end and the lower end of each first lead bar 2 are respectively a support part 21 and an alternating current lead part 22, the number of the support parts 21 of each first lead bar 2 is 2, a first bending part 23 is arranged between the support part 21 of each first lead bar 2 and the alternating current lead part 22, the upper end and the lower end of each second lead bar 3 are respectively a welding part 31 and a direct current lead part 32, the number of the welding parts 31 of each second lead bar 3 is 2, a second bending part 33 is arranged between the welding part 31 of each second lead bar 3 and the direct current lead part 32, an epoxy package 4 is wrapped on the welding parts 31 of the four diode chips 1, the support parts 21 of the first lead bars 2 and the welding parts 31 of the second lead bars 3, the four diode chips 1 are respectively arranged between the 4 support parts 21 of the 2 first lead bars 2 and the 4 welding parts 31 of the 2 second lead bars 3 (ii) a
The edge of each support part 21 of the first lead bar 2 is provided with at least 2 first through holes 5, the edge of each first through hole 5 is provided with a first flanging part 6 opposite to the diode chip 1, the edge of each welding part 31 of the second lead bar 3 is provided with at least 2 second through holes 7, and the edge of each second through hole is provided with a second flanging part 8 opposite to the diode chip 1.
The lower end of the diode chip 1 is electrically connected to the support portion 21 of the first lead bar 2 via the solder layer 9.
The upper end of the diode chip 1 and the soldering portion 31 of the second lead bar 3 are electrically connected to each other through a solder layer 9.
When the rectifier bridge stack device is adopted, at least 2 first through holes are formed in the edge of the supporting portion of the first lead strip, the edge of each first through hole is provided with a first flanging portion opposite to the diode chip, at least 2 second through holes are formed in the edge of the welding portion of the second lead strip, and the edge of each second through hole is provided with a second flanging portion opposite to the diode chip, so that the virtual soldering and the reduction of the contact area caused by the overflow of soldering paste are avoided, the electrical contact performance and the flatness of the supporting portion and the welding portion of the lead strip and the diode chip are greatly improved, and the service life of the device is prolonged; in addition, the edge of the through hole of the lead line is provided with a flanging part, which is beneficial to further reducing the contact resistance, thereby further improving the stability of the device.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims (3)

1. A bridge rectifier device, characterized by: the LED packaging structure comprises four diode chips (1), 2 first lead strips (2) and 2 second lead strips (3), wherein the upper end and the lower end of each first lead strip (2) are respectively a support part (21) and an alternating current lead part (22), the number of the support parts (21) of each first lead strip (2) is 2, a first bending part (23) is arranged between the support part (21) of each first lead strip (2) and the alternating current lead part (22), the upper end and the lower end of each second lead strip (3) are respectively a welding part (31) and a direct current lead part (32), the number of the welding parts (31) of each second lead strip (3) is 2, a first bending part (33) is arranged between the welding part (31) of each second lead strip (3) and the direct current lead part (32), and an epoxy packaging body (4) is coated on the four diode chips (1), the support parts (21) of the first lead strips (2) and the welding parts (31) of the second lead strips (3), the four diode chips (1) are respectively positioned between 4 supporting parts (21) of the 2 first lead strips (2) and 4 welding parts (31) of the 2 second lead strips (3);
the edge of each supporting part (21) of the first lead strip (2) is provided with at least 2 first through holes (5), the edge of each first through hole (5) is provided with a first flanging part (6) opposite to the diode chip (1), the edge of each welding part (31) of the second lead strip (3) is provided with at least 2 second through holes (7), and the edge of each second through hole is provided with a second flanging part (8) opposite to the diode chip (1).
2. The rectifier bridge stack device of claim 1, wherein: the lower end of the diode chip (1) is electrically connected with the supporting part (21) of the first lead bar (2) through a soldering tin layer (9).
3. The rectifier bridge stack device of claim 1, wherein: the upper end of the diode chip (1) is electrically connected with the welding part (31) of the second lead bar (3) through a soldering tin layer (9).
CN202020811723.0U 2020-05-15 2020-05-15 Rectifier bridge stack device Active CN211957632U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202020811723.0U CN211957632U (en) 2020-05-15 2020-05-15 Rectifier bridge stack device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202020811723.0U CN211957632U (en) 2020-05-15 2020-05-15 Rectifier bridge stack device

Publications (1)

Publication Number Publication Date
CN211957632U true CN211957632U (en) 2020-11-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202020811723.0U Active CN211957632U (en) 2020-05-15 2020-05-15 Rectifier bridge stack device

Country Status (1)

Country Link
CN (1) CN211957632U (en)

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