CN212542421U - Patch type bidirectional TVS device - Google Patents
Patch type bidirectional TVS device Download PDFInfo
- Publication number
- CN212542421U CN212542421U CN202021468702.XU CN202021468702U CN212542421U CN 212542421 U CN212542421 U CN 212542421U CN 202021468702 U CN202021468702 U CN 202021468702U CN 212542421 U CN212542421 U CN 212542421U
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- diode chip
- lead
- lead bar
- vertical welding
- bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The utility model discloses a patch type bidirectional TVS device, which comprises a first diode chip, a second diode chip, a first lead bar and a second lead bar, wherein the first lead bar and the second lead bar are both composed of a vertical welding part and a horizontal lead part, and the vertical welding part and the horizontal lead part are vertically arranged; the vertical welding parts of the first diode chip, the second diode chip, the first lead bar and the second lead bar are positioned in the epoxy packaging body, the horizontal lead foot parts of the first lead bar and the second lead bar are positioned at the bottom of the epoxy packaging body, and the first diode chip and the second diode chip are vertically arranged between the vertical welding parts of the first lead bar and the second lead bar; the cathode of the first diode chip is electrically connected with the cathode of the second diode chip through a soldering paste layer. The utility model discloses existing volume that does benefit to further reduction device and the area that occupies the PCB circuit board also more are favorable to taking away the heat fast.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a TVS semiconductor device.
Background
The damage of static electricity to electronic components is divided into sudden damage and potential damage, wherein the sudden damage refers to partial damage and loss of function of a device, the potential damage refers to partial damage and loss of function of the device, the function of the device is not lost, and the device cannot be found in a production process test, but the product becomes unstable in use, and the product is good and bad, so that the product quality is more damaged. As the integration of elements becomes higher, the improvement of the integration means a reduction in the electrostatic breakdown resistance of the device. How to design a small transient voltage suppressor diode becomes the direction of effort for those skilled in the art.
Disclosure of Invention
The utility model aims at providing a two-way TVS device of SMD, this two-way TVS device of SMD avoids the destruction of surge pulse in the components and parts of protection circuit in the time, has both reduced the installation area of device, has also improved the intensity of device and the welding of the diode chip of being convenient for.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a patch type bidirectional TVS device comprises a first diode chip, a second diode chip, a first lead strip and a second lead strip, wherein the first lead strip and the second lead strip are respectively composed of a vertical welding part and a horizontal lead foot part, and the vertical welding part and the horizontal lead foot part are vertically arranged;
the first diode chip and the second diode chip are vertically arranged between the vertical welding parts of the first lead bar and the second lead bar; the negative pole of the first diode chip is electrically connected with the negative pole of the second diode chip through a soldering paste layer, and the respective positive poles of the first diode chip and the second diode chip are electrically connected with the respective vertical welding parts of the first lead bar and the second lead bar through the soldering paste layer.
The further improved scheme in the technical scheme is as follows:
1. in the above aspect, the horizontal lead portions of the first lead bar and the second lead bar extend from the side walls thereof in the horizontal direction.
2. In the above aspect, the height of the vertical welding portion is greater than the length of the horizontal lead portion.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the utility model discloses two-way TVS device of SMD, its first lead wire strip and second lead wire strip are by vertical weld part, horizontal pin portion group one-tenth, and this vertical weld part is perpendicular setting with horizontal pin portion, and the respective horizontal pin portion of first lead wire strip and second lead wire strip is located the epoxy packaging body bottom, first diode chip, second diode chip all set up vertically between the respective vertical weld part of first lead wire strip and second lead wire strip; the negative pole of first diode chip and the negative pole of second diode chip are connected through a soldering paste layer electricity, and this first diode chip, the respective positive pole of second diode chip are connected through soldering paste layer and the respective vertical weld part electricity of first lead wire strip and second lead wire strip respectively, when the destruction that the components and parts in the protection circuit avoided surge pulse, both reduced the installation area of device, also improved the intensity of device and the welding of the diode chip of being convenient for.
Drawings
Fig. 1 is a schematic structural diagram of the bidirectional low-voltage transient voltage suppression semiconductor device of the present invention.
In the above drawings: 1. a diode chip; 2. a first lead strip; 3. a second lead strip; 4. a vertical weld; 5. a horizontal pin section; 6. welding a paste layer; 7. an epoxy package; 8. a second diode chip.
Detailed Description
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1: a patch type bidirectional TVS device comprises a first diode chip 1, a second diode chip 8, a first lead strip 2 and a second lead strip 3, wherein the first lead strip 2 and the second lead strip 3 are both composed of a vertical welding part 4 and a horizontal pin part 5, and the vertical welding part 4 and the horizontal pin part 5 are vertically arranged;
the vertical welding parts 4 of the first diode chip 1, the second diode chip 8, the first lead bar 2 and the second lead bar 3 are positioned in an epoxy packaging body 7, the horizontal lead parts 5 of the first lead bar 2 and the second lead bar 3 are positioned at the bottom of the epoxy packaging body 7, and the first diode chip 1 and the second diode chip 8 are vertically arranged between the vertical welding parts 4 of the first lead bar 2 and the second lead bar 2; the cathode of the first diode chip 1 is electrically connected with the cathode of the second diode chip 8 through a solder paste layer 6, and the respective anodes of the first diode chip 1 and the second diode chip 8 are electrically connected with the respective vertical welding parts 4 of the first lead bar 2 and the second lead bar 3 through the solder paste layer 6.
The height of the vertical welding portion 4 is 1.2 times the length of the horizontal lead portion 5.
Example 2: a patch type bidirectional TVS device comprises a first diode chip 1, a second diode chip 8, a first lead strip 2 and a second lead strip 3, wherein the first lead strip 2 and the second lead strip 3 are both composed of a vertical welding part 4 and a horizontal pin part 5, and the vertical welding part 4 and the horizontal pin part 5 are vertically arranged;
the vertical welding parts 4 of the first diode chip 1, the second diode chip 8, the first lead bar 2 and the second lead bar 3 are positioned in an epoxy packaging body 7, the horizontal lead parts 5 of the first lead bar 2 and the second lead bar 3 are positioned at the bottom of the epoxy packaging body 7, and the first diode chip 1 and the second diode chip 8 are vertically arranged between the vertical welding parts 4 of the first lead bar 2 and the second lead bar 2; the cathode of the first diode chip 1 is electrically connected with the cathode of the second diode chip 8 through a solder paste layer 6, and the respective anodes of the first diode chip 1 and the second diode chip 8 are electrically connected with the respective vertical welding parts 4 of the first lead bar 2 and the second lead bar 3 through the solder paste layer 6.
The horizontal lead portions 5 of the first lead frame 2 and the second lead frame 3 extend from the side walls thereof in the horizontal direction.
The height of the vertical welding portion 4 is 1.5 times the length of the horizontal lead portion 5.
When the patch type bidirectional TVS device is adopted, a first lead bar and a second lead bar of the device are both composed of a vertical welding part and a horizontal lead part, the vertical welding part and the horizontal lead part are vertically arranged, the respective horizontal lead parts of the first lead bar and the second lead bar are positioned at the bottom of an epoxy packaging body, and a first diode chip and a second diode chip are vertically arranged between the respective vertical welding parts of the first lead bar and the second lead bar; the negative pole of first diode chip and the negative pole of second diode chip are connected through a soldering paste layer electricity, and this first diode chip, the respective positive pole of second diode chip are connected through soldering paste layer and the respective vertical weld part electricity of first lead wire strip and second lead wire strip respectively, when the destruction that the components and parts in the protection circuit avoided surge pulse, both reduced the installation area of device, also improved the intensity of device and the welding of the diode chip of being convenient for.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (3)
1. A SMD bidirectional TVS device is characterized in that: the LED chip comprises a first diode chip (1), a second diode chip (8), a first lead strip (2) and a second lead strip (3), wherein the first lead strip (2) and the second lead strip (3) are both composed of a vertical welding part (4) and a horizontal pin part (5), and the vertical welding part (4) and the horizontal pin part (5) are vertically arranged;
the vertical welding parts (4) of the first diode chip (1), the second diode chip (8), the first lead bar (2) and the second lead bar (3) are positioned in an epoxy packaging body (7), the horizontal pin parts (5) of the first lead bar (2) and the second lead bar (3) are positioned at the bottom of the epoxy packaging body (7), and the first diode chip (1) and the second diode chip (8) are vertically arranged between the vertical welding parts (4) of the first lead bar (2) and the second lead bar (3); the negative pole of the first diode chip (1) is electrically connected with the negative pole of the second diode chip (8) through a welding paste layer (6), and the respective positive poles of the first diode chip (1) and the second diode chip (8) are electrically connected with the respective vertical welding parts (4) of the first lead bar (2) and the second lead bar (3) through the welding paste layer (6).
2. The SMD bidirectional TVS device of claim 1, wherein: the horizontal pin parts (5) of the first lead strip (2) and the second lead strip (3) extend out of the side walls of the first lead strip and the second lead strip in the horizontal direction.
3. The SMD bidirectional TVS device of claim 1, wherein: the height of the vertical welding part (4) is larger than the length of the horizontal pin part (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021468702.XU CN212542421U (en) | 2020-07-23 | 2020-07-23 | Patch type bidirectional TVS device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021468702.XU CN212542421U (en) | 2020-07-23 | 2020-07-23 | Patch type bidirectional TVS device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212542421U true CN212542421U (en) | 2021-02-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021468702.XU Active CN212542421U (en) | 2020-07-23 | 2020-07-23 | Patch type bidirectional TVS device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212542421U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113192938A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Large-current non-polar Schottky diode |
| CN113257797A (en) * | 2021-06-25 | 2021-08-13 | 瑞能半导体科技股份有限公司 | Common anode diode device and preparation method thereof |
-
2020
- 2020-07-23 CN CN202021468702.XU patent/CN212542421U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113192938A (en) * | 2021-04-29 | 2021-07-30 | 东莞市佳骏电子科技有限公司 | Large-current non-polar Schottky diode |
| CN113192938B (en) * | 2021-04-29 | 2022-06-21 | 东莞市佳骏电子科技有限公司 | Large-current non-polar Schottky diode |
| CN113257797A (en) * | 2021-06-25 | 2021-08-13 | 瑞能半导体科技股份有限公司 | Common anode diode device and preparation method thereof |
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