CN113972194A - Bidirectional TVS diode - Google Patents
Bidirectional TVS diode Download PDFInfo
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- CN113972194A CN113972194A CN202010716156.5A CN202010716156A CN113972194A CN 113972194 A CN113972194 A CN 113972194A CN 202010716156 A CN202010716156 A CN 202010716156A CN 113972194 A CN113972194 A CN 113972194A
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- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 13
- 238000003466 welding Methods 0.000 claims abstract description 36
- 239000004593 Epoxy Substances 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 238000005476 soldering Methods 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 230000006378 damage Effects 0.000 description 8
- 230000005611 electricity Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/074—Stacked arrangements of non-apertured devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a bidirectional TVS diode, wherein a first diode chip, a second diode chip, respective vertical welding parts and inclined connecting parts of a first lead bar and a second lead bar are positioned in an epoxy packaging body, respective horizontal lead parts of the first lead bar and the second lead bar are positioned at the bottom of the epoxy packaging body, and the first diode chip and the second diode chip are vertically arranged between the respective vertical welding parts of the first lead bar and the second lead bar; the cathode of the first diode chip is electrically connected with the cathode of the second diode chip through a soldering paste layer, and at least one through hole is formed in each inclined connecting portion of the first lead bar and the second lead bar. The low-voltage TVS diode device effectively prevents water vapor from entering the device along the horizontal pin part, thereby improving the reliability of the device.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a bidirectional TVS diode.
Background
The damage of static electricity to electronic components is divided into sudden damage and potential damage, wherein the sudden damage refers to partial damage and loss of function of a device, the potential damage refers to partial damage and loss of function of the device, the function of the device is not lost, and the device cannot be found in a production process test, but the product becomes unstable in use, and the product is good and bad, so that the product quality is more damaged. As the integration of elements becomes higher, the improvement of the integration means a reduction in the electrostatic breakdown resistance of the device. How to design a small transient voltage suppressor diode becomes the direction of effort for those skilled in the art.
Disclosure of Invention
The invention aims to provide a bidirectional TVS diode which effectively prevents water vapor from entering the interior of a device along a horizontal pin part, thereby improving the reliability of the device.
In order to achieve the purpose, the invention adopts the technical scheme that: a low-voltage TVS diode device comprises a first diode chip, a second diode chip, a first lead strip and a second lead strip, wherein the first lead strip and the second lead strip are respectively composed of a vertical welding part, a horizontal lead part and an inclined connecting part positioned between the vertical welding part and the horizontal lead part, the vertical welding part and the horizontal lead part are vertically arranged, and the included angle between the inclined connecting part and the horizontal lead part is 30-60 degrees;
the first diode chip, the second diode chip, the respective vertical welding parts of the first lead bar and the second lead bar and the inclined connecting parts are positioned in the epoxy packaging body, the respective horizontal lead parts of the first lead bar and the second lead bar are positioned at the bottom of the epoxy packaging body, and the first diode chip and the second diode chip are vertically arranged between the respective vertical welding parts of the first lead bar and the second lead bar;
the negative electrode of the first diode chip is electrically connected with the negative electrode of the second diode chip through a soldering paste layer, and the respective positive electrodes of the first diode chip and the second diode chip are electrically connected with the respective vertical welding parts of the first lead bar and the second lead bar through the soldering paste layer; and at least one through hole is formed in each inclined connecting part of the first lead strip and the second lead strip.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the included angle between the inclined connecting part and the horizontal pin part is 45 degrees.
2. In the above aspect, the horizontal lead portions of the first lead bar and the second lead bar extend from the side walls thereof in the horizontal direction.
3. In the above scheme, the through hole of the inclined connecting part is a round hole.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
1. according to the bidirectional TVS diode, the first lead strip and the second lead strip are respectively composed of the vertical welding part, the horizontal pin part and the inclined connecting part positioned between the vertical welding part and the horizontal pin part, the included angle between the inclined connecting part and the horizontal pin part is 30-60 degrees, and the inclined connecting part is provided with the through hole, so that water vapor is effectively prevented from entering the device along the horizontal pin part, and the reliability of the device is improved.
2. According to the bidirectional TVS diode, the first lead bar and the second lead bar are both composed of the vertical welding part and the horizontal lead part, the vertical welding part and the horizontal lead part are vertically arranged, the respective horizontal lead parts of the first lead bar and the second lead bar are positioned at the bottom of an epoxy packaging body, and the first diode chip and the second diode chip are both vertically arranged between the respective vertical welding parts of the first lead bar and the second lead bar; the negative pole of first diode chip and the negative pole of second diode chip are connected through a soldering paste layer electricity, and this first diode chip, the respective positive pole of second diode chip are connected through soldering paste layer and the respective vertical weld part electricity of first lead wire strip and second lead wire strip respectively, when the destruction that the components and parts in the protection circuit avoided surge pulse, both reduced the installation area of device, also improved the intensity of device and the welding of the diode chip of being convenient for.
Drawings
Fig. 1 is a schematic structural diagram of a bidirectional TVS diode according to the present invention.
In the above drawings: 1. a first diode chip; 2. a first lead strip; 3. a second lead strip; 4. a vertical weld; 5. a horizontal pin section; 6. an inclined connecting part; 7. an epoxy package; 8. welding a paste layer; 9. a second diode chip; 10. and a through hole.
Detailed Description
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1: a low-voltage TVS diode device comprises a first diode chip 1, a second diode chip 9, a first lead strip 2 and a second lead strip 3, wherein the first lead strip 2 and the second lead strip 3 are respectively composed of a vertical welding part 4, a horizontal lead part 5 and an inclined connecting part 6 positioned between the vertical welding part 4 and the horizontal lead part 5, the vertical welding part 4 and the horizontal lead part 5 are vertically arranged, and an included angle of 30-60 degrees is formed between the inclined connecting part 6 and the horizontal lead part 5;
the first diode chip 1, the second diode chip 9, the vertical welding part 4 of the first lead strip 2 and the second lead strip 3 and the inclined connecting part 6 are positioned in an epoxy packaging body 7, the horizontal lead part 5 of the first lead strip 2 and the second lead strip 3 is positioned at the bottom of the epoxy packaging body 7, and the first diode chip 1 and the second diode chip 9 are vertically arranged between the vertical welding parts 4 of the first lead strip 2 and the second lead strip 2;
the cathode of the first diode chip 1 is electrically connected with the cathode of the second diode chip 9 through a solder paste layer 8, and the anodes of the first diode chip 1 and the second diode chip 9 are respectively electrically connected with the vertical welding parts 4 of the first lead bar 2 and the second lead bar 3 through the solder paste layer 8; the inclined connecting part 6 of each of the first lead strip 2 and the second lead strip 3 is provided with at least one through hole 10.
The inclined connecting portion 6 and the horizontal pin portion 5 form an included angle of 50 degrees, and the through hole of the inclined connecting portion 6 is a circular hole.
Example 2: a low-voltage TVS diode device comprises a first diode chip 1, a second diode chip 9, a first lead strip 2 and a second lead strip 3, wherein the first lead strip 2 and the second lead strip 3 are respectively composed of a vertical welding part 4, a horizontal lead part 5 and an inclined connecting part 6 positioned between the vertical welding part 4 and the horizontal lead part 5, the vertical welding part 4 and the horizontal lead part 5 are vertically arranged, and an included angle of 30-60 degrees is formed between the inclined connecting part 6 and the horizontal lead part 5;
the first diode chip 1, the second diode chip 9, the vertical welding part 4 of the first lead strip 2 and the second lead strip 3 and the inclined connecting part 6 are positioned in an epoxy packaging body 7, the horizontal lead part 5 of the first lead strip 2 and the second lead strip 3 is positioned at the bottom of the epoxy packaging body 7, and the first diode chip 1 and the second diode chip 9 are vertically arranged between the vertical welding parts 4 of the first lead strip 2 and the second lead strip 2;
the cathode of the first diode chip 1 is electrically connected with the cathode of the second diode chip 9 through a solder paste layer 8, and the anodes of the first diode chip 1 and the second diode chip 9 are respectively electrically connected with the vertical welding parts 4 of the first lead bar 2 and the second lead bar 3 through the solder paste layer 8; the inclined connecting part 6 of each of the first lead strip 2 and the second lead strip 3 is provided with at least one through hole 10.
The inclined connecting portion 6 forms an angle of 45 ° with the horizontal lead portion 5.
The horizontal lead portions 5 of the first lead frame 2 and the second lead frame 3 extend from the side walls thereof in the horizontal direction.
When the bidirectional TVS diode is adopted, the first lead strip and the second lead strip are respectively composed of a vertical welding part, a horizontal pin part and an inclined connecting part positioned between the vertical welding part and the horizontal pin part, the included angle between the inclined connecting part and the horizontal pin part is 30-60 degrees, and the inclined connecting part is provided with a through hole, so that water vapor is effectively prevented from entering the device along the horizontal pin part, and the reliability of the device is improved; besides, the device protects components in the circuit from being damaged by surge pulse, reduces the installation area of the device, improves the strength of the device and is convenient for welding the diode chip.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (4)
1. A bidirectional TVS diode, comprising: the LED chip comprises a first diode chip (1), a second diode chip (9), a first lead strip (2) and a second lead strip (3), wherein the first lead strip (2) and the second lead strip (3) are respectively composed of a vertical welding part (4), a horizontal pin part (5) and an inclined connecting part (6) positioned between the vertical welding part (4) and the horizontal pin part (5), the vertical welding part (4) and the horizontal pin part (5) are vertically arranged, and an included angle of 30-60 degrees is formed between the inclined connecting part (6) and the horizontal pin part (5);
the vertical welding parts (4) and the inclined connecting parts (6) of the first diode chip (1), the second diode chip (9), the first lead bar (2) and the second lead bar (3) are positioned in an epoxy packaging body (7), the horizontal lead foot parts (5) of the first lead bar (2) and the second lead bar (3) are positioned at the bottom of the epoxy packaging body (7), and the first diode chip (1) and the second diode chip (9) are vertically arranged between the vertical welding parts (4) of the first lead bar (2) and the second lead bar (2);
the cathode of the first diode chip (1) is electrically connected with the cathode of the second diode chip (9) through a solder paste layer (8), and the anodes of the first diode chip (1) and the second diode chip (9) are respectively electrically connected with the respective vertical welding parts (4) of the first lead bar (2) and the second lead bar (3) through the solder paste layer (8); at least one through hole (10) is formed in each inclined connecting portion (6) of the first lead strip (2) and the second lead strip (3).
2. The bidirectional TVS diode of claim 1, wherein: the inclined connecting part (6) and the horizontal pin part (5) form an included angle of 45 degrees.
3. The bidirectional TVS diode of claim 1, wherein: the horizontal pin parts (5) of the first lead strip (2) and the second lead strip (3) extend out of the side walls of the first lead strip and the second lead strip in the horizontal direction.
4. The bidirectional TVS diode of claim 1, wherein: the through hole of the inclined connecting part (6) is a round hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010716156.5A CN113972194A (en) | 2020-07-23 | 2020-07-23 | Bidirectional TVS diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010716156.5A CN113972194A (en) | 2020-07-23 | 2020-07-23 | Bidirectional TVS diode |
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| Publication Number | Publication Date |
|---|---|
| CN113972194A true CN113972194A (en) | 2022-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010716156.5A Pending CN113972194A (en) | 2020-07-23 | 2020-07-23 | Bidirectional TVS diode |
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| CN (1) | CN113972194A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050006731A1 (en) * | 2003-07-10 | 2005-01-13 | General Semiconductor, Inc. | Surface mount multichip devices |
| CN201549505U (en) * | 2009-11-27 | 2010-08-11 | 中国振华集团永光电子有限公司 | Glass passivation packaging transient voltage suppression diode structure |
| US20160293592A1 (en) * | 2015-03-31 | 2016-10-06 | Vishay General Semiconductor Llc | Thin bi-directional transient voltage suppressor (tvs) or zener diode |
| CN108269859A (en) * | 2017-12-12 | 2018-07-10 | 北京时代民芯科技有限公司 | A kind of bilateral transient voltage suppression diode and manufacturing method |
| US20180342499A1 (en) * | 2017-05-25 | 2018-11-29 | Alpha And Omega Semiconductor (Cayman) Ltd. | Low capacitance bidirectional transient voltage suppressor |
| CN110085680A (en) * | 2019-05-15 | 2019-08-02 | 苏州达晶微电子有限公司 | Surface-adhered type TVS device |
| CN209658185U (en) * | 2019-05-06 | 2019-11-19 | 如皋市大昌电子有限公司 | A kind of stick chip type diode element |
| CN210926000U (en) * | 2019-10-21 | 2020-07-03 | 珠海格力电器股份有限公司 | Lead frame |
-
2020
- 2020-07-23 CN CN202010716156.5A patent/CN113972194A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050006731A1 (en) * | 2003-07-10 | 2005-01-13 | General Semiconductor, Inc. | Surface mount multichip devices |
| CN201549505U (en) * | 2009-11-27 | 2010-08-11 | 中国振华集团永光电子有限公司 | Glass passivation packaging transient voltage suppression diode structure |
| US20160293592A1 (en) * | 2015-03-31 | 2016-10-06 | Vishay General Semiconductor Llc | Thin bi-directional transient voltage suppressor (tvs) or zener diode |
| US20180342499A1 (en) * | 2017-05-25 | 2018-11-29 | Alpha And Omega Semiconductor (Cayman) Ltd. | Low capacitance bidirectional transient voltage suppressor |
| CN108269859A (en) * | 2017-12-12 | 2018-07-10 | 北京时代民芯科技有限公司 | A kind of bilateral transient voltage suppression diode and manufacturing method |
| CN209658185U (en) * | 2019-05-06 | 2019-11-19 | 如皋市大昌电子有限公司 | A kind of stick chip type diode element |
| CN110085680A (en) * | 2019-05-15 | 2019-08-02 | 苏州达晶微电子有限公司 | Surface-adhered type TVS device |
| CN210926000U (en) * | 2019-10-21 | 2020-07-03 | 珠海格力电器股份有限公司 | Lead frame |
Non-Patent Citations (2)
| Title |
|---|
| BOUANGEUNE: "Transmission line pulse properties for a bidirectional transient voltage suppression diode fabricated using low-temperature epitacy", 《ELECTRONIC MATERIALS LETTERS》, vol. 11, 31 January 2015 (2015-01-31), pages 88 - 92, XP035441625, DOI: 10.1007/s13391-014-4010-0 * |
| 徐伟;: "常见片状二极管介绍", 家电检修技术, no. 19, 1 October 2011 (2011-10-01), pages 55 - 57 * |
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