CN210092079U - Bidirectional ESD diode - Google Patents
Bidirectional ESD diode Download PDFInfo
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- CN210092079U CN210092079U CN201921121653.XU CN201921121653U CN210092079U CN 210092079 U CN210092079 U CN 210092079U CN 201921121653 U CN201921121653 U CN 201921121653U CN 210092079 U CN210092079 U CN 210092079U
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- esd diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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Abstract
The utility model discloses a two-way ESD diode belongs to electron device technical field, wherein: the rectifier comprises a plurality of rectifier chips A and a plurality of rectifier chips B, wherein the cathodes and the anodes of the adjacent rectifier chips A are mutually overlapped and fixedly connected, the cathodes and the anodes of the adjacent rectifier chips B are mutually overlapped and fixedly connected and are opposite to the overlapping direction of the rectifier chips A, the cathode of the last rectifier chip A is connected with the anode of the last rectifier chip B through a lead, and the anode of the first rectifier chip A is connected with the cathode of the first rectifier chip B through a lead; a plurality of adjacent rectifier chip A chips are mutually overlapped, a plurality of rectifier chip B chips which are mutually overlapped and reversed with the rectifier chip A are mutually overlapped, and an ESD diode with a bidirectional protection function is manufactured by utilizing the forward voltage drop of the rectifier chip according to the requirement of reverse breakdown voltage, so that the diode with low reverse breakdown voltage, low capacitance and compact structure is obtained.
Description
Technical Field
The utility model belongs to the technical field of electron device, a two-way ESD diode is related to.
Background
Electronic devices are widely applied to power equipment, and with the continuous and rapid development of artificial intelligence and the internet of things in the future, the electronic devices can be used more; in a high-frequency signal circuit, diodes with reverse breakdown voltage of below 6V and junction capacitance of several picofarads are often used, and at present, a manufacturing method for obtaining such diode chips is as follows: the TVS diode is connected with a low junction capacitance diode in series, but the structure is difficult to have the low junction capacitance characteristic of reverse breakdown below 6V.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a two-way ESD diode.
The utility model discloses a following technical scheme can realize.
The utility model provides a pair of two-way ESD diode, wherein: the rectifier comprises a plurality of rectifier chips A and a plurality of rectifier chips B, wherein the adjacent rectifier chips A are fixedly connected with each other in a stacking manner, the adjacent rectifier chips B are fixedly connected with each other in a stacking manner and are opposite to the stacking direction of the rectifier chips A, the last rectifier chip A cathode is connected with the last rectifier chip B anode through a lead, and the first rectifier chip A anode is connected with the first rectifier chip B cathode through a lead.
The rectifier circuit comprises a rectifier chip A, a rectifier chip B and a first rectifier chip A, and is characterized by further comprising an electrode slice A, an electrode slice B, a polar plate A and a polar plate B, wherein one end of the electrode slice A and one end of the electrode slice B are installed on the polar plate A, the other end of the electrode slice A and the other end of the electrode slice B are respectively connected with the cathode of the last rectifier chip A and the anode of the last rectifier chip B through leads, and the anode of the first rectifier chip A.
The lower part of the polar plate A is fixedly connected with a pin B, and the lower part of the polar plate B is fixedly connected with a pin A.
The pin A and the pin B are respectively embedded in the bottom through hole of the hollow base at intervals, and the cover plate is fixedly installed on the opening edge of the base in an embedded mode.
The base and the cover plate are both made of metal ceramics.
The base and the cover plate are rectangular in external structure.
And insulation layers are arranged among the gaps among the plurality of superposed rectifier chips A, the plurality of superposed rectifier chips B, the electrode plates A and the electrode plates B.
The plurality of rectifier chips A and the plurality of rectifier chips B are parallelly arranged between two rows and are vertically and fixedly arranged on the polar plate B.
The beneficial effects of the utility model reside in that: a plurality of adjacent rectifier chip A chips are mutually overlapped, a plurality of rectifier chip B chips which are mutually overlapped and reversed with the rectifier chip A are mutually overlapped, and the ESD diode which has a bidirectional protection function, low junction capacitance and a compact structure is manufactured by utilizing the forward voltage drop of the rectifier chip according to the requirement of reverse breakdown voltage.
Drawings
FIG. 1 is a schematic view of the top half-section structure of the present invention;
FIG. 2 is a schematic view of a front view half-section structure of the present invention;
FIG. 3 is a schematic view of a left-side half-section structure of the present invention;
FIG. 4 is a schematic view of a right-side half-section structure of the present invention;
fig. 5 is a schematic circuit diagram of the present invention.
In the figure: 1-a rectifier chip A; 2-a rectifier chip B; 3-electrode slice A; 4-electrode slice B; 5-pole plate A; 6-pole plate B; 7-a base; 8-an insulating layer; 9-pin A; 10-a cover plate; 11-Pin B.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
1-5, a bi-directional ESD diode, wherein: the rectifier comprises a plurality of rectifier chips A1 and a plurality of rectifier chips B2, wherein adjacent rectifier chips A1 are mutually overlapped, welded and fixedly connected between the cathodes and the anodes, adjacent rectifier chips B2 are mutually overlapped, welded and fixedly connected between the cathodes and the anodes and are opposite to the overlapping direction of the rectifier chips A1, the cathode of the last rectifier chip A1 is connected with the anode of the last rectifier chip B2 through a welded lead, and the anode of the first rectifier chip A1 is connected with the cathode of the first rectifier chip B2 through a welded lead.
The working principle is as follows: as shown in fig. 1 to 5, when it is necessary to conduct a voltage of 2.8V on a wire connecting the cathode of the last rectifying chip a1 with the anode of the last rectifying chip B2 and a wire connecting the anode of the first rectifying chip a1 with the cathode of the first rectifying chip B2, the rectifying chips having a forward voltage drop of 0.7V and a length and a width of 1.2 mm × 1.2 mm and a capacitance of 10pF are used as the rectifying chips a1 and B2, and the above assembly is performed so that the total capacitance between the wires connected at two ends is in a capacitance state of 5pF, and the plurality of adjacent rectifying chips a1 and the plurality of adjacent rectifying chips B2 are stacked on each other, so that the overall structure is compact.
A bidirectional ESD diode also comprises an electrode plate A3, an electrode plate B4, a polar plate A5 and a polar plate B6, wherein one end of the electrode plate A3 and one end of the electrode plate B4 are fixedly welded on the polar plate A5, and the other ends of the electrode plate A3 and the electrode plate B4 are respectively connected with the cathode of the last rectifier chip A1 and the anode of the last rectifier chip B2 through welding wires; so that the electrode slice A3, the electrode slice B4 and the polar plate A5 form a whole convenient to store and release; the anode of the first rectifying chip A1 and the cathode of the first rectifying chip B2 are fixedly welded and connected on the pole plate B6 to form a whole body which is convenient to store and place, as shown in figures 1-5.
The lower part of the polar plate A5 is fixedly connected with a pin B11 in a welding manner, the lower part of the polar plate B6 is fixedly connected with a pin A9 in a welding manner, and the polar plate is quickly attached to an integrated circuit board through a pin A9 and a pin B11 or is conveniently and quickly fixedly connected with an external pin, as shown in figures 1-5.
A bidirectional ESD diode further comprises a base 7 and a cover plate 10, wherein a pin A9 and a pin B11 are respectively embedded in a through hole at the bottom of the hollow base 7 at intervals, the cover plate 10 is fixedly installed on an opening edge of the base 7 in an embedded and glued mode to form a closed whole, and the inside of the diode is enabled to obtain a safer environment, as shown in figures 1-4.
The base 7 and the cover plate 10 are both made of metal ceramics, so that the equipment is isolated from an external electric field, and the service life of the equipment is prolonged, as shown in figures 1-4.
The base 7 and the cover plate 10 are rectangular outside, so that a plurality of the base and the cover plate can be tightly stacked during storage and transportation, and the occupied space is reduced, as shown in figures 1-4.
An insulating layer 8 is arranged between the gaps of the stacked rectifying chips A1, the stacked rectifying chips B2, the electrode plate A3 and the electrode plate B4, so that the electrical interference among internal components of the equipment is improved, and the working performance of the equipment is improved, as shown in figures 1-4.
The rectifying chips A1 and the rectifying chips B2 are arranged in parallel in two rows and are vertically welded and fixedly arranged on the polar plate B6, the utilization rate of a closed internal space formed by the base 7 and the cover plate 10 is improved, and the equipment is more compact as shown in figures 1-4.
In the bidirectional ESD diode, the specific manufacturing method is as follows:
firstly, welding, superposing and fixedly connecting the anode and the cathode of adjacent rectifier chips A1;
step two, the anode and the cathode of the adjacent rectifier chip B2 are welded, overlapped, fixedly connected with each other and are oppositely placed with the overlapping of the rectifier chip A1;
step three, fixedly mounting the anode of the first rectifying chip A1 and the cathode of the first rectifying chip B2 on the upper part of a polar plate B6 in a welding way by using a lead, and fixedly mounting a pin A9 on the lower part of the polar plate B6 in a welding way; the cathode of the last rectifying chip A1 and the anode of the last rectifying chip B2 are respectively connected to an electrode plate A3 and an electrode plate B4 through welding wires, the bottoms of the electrode plate A3 and the electrode plate B4 on the upper part of the electrode plate A5, and the lower part of the electrode plate A5 is respectively welded with an installation pin B11;
and fourthly, embedding the pin A9 and the pin B11 in through holes at the bottom of the base 7 at intervals, sealing the through holes by using the electric glue, embedding and fixedly installing the cover plate 10 in the opening of the base 7, sealing the through holes by using the electric glue, and filling an insulating layer in gaps among the rectifying chip A1, the rectifying chip B2, the electrode plate A3 and the electrode plate B4.
Claims (8)
1. A bi-directional ESD diode, characterized by: including a plurality of rectifier chip A (1) and a plurality of rectifier chip B (2), adjacent rectifier chip A (1) negative and positive interelectrode superposes fixed connection each other, adjacent rectifier chip B (2) negative and positive interelectrode superpose fixed connection each other and with rectifier chip A (1) stack opposite direction, last rectifier chip A (1) negative pole is connected through the wire with last rectifier chip B (2) positive pole, first rectifier chip A (1) positive pole is connected through the wire with first rectifier chip B (2) negative pole.
2. A bi-directional ESD diode as set forth in claim 1, wherein: still include electrode slice A (3), electrode slice B (4), polar plate A (5), polar plate B (6), electrode slice A (3) and electrode slice B (4) one end are installed on polar plate A (5), electrode slice A (3), electrode slice B (4) other end connect last rectifier chip A (1) negative pole and last rectifier chip B (2) positive pole respectively through the wire, the equal fixed connection of first rectifier chip A (1) positive pole and first rectifier chip B (2) negative pole is on polar plate B (6).
3. A bi-directional ESD diode as set forth in claim 2, wherein: the lower part of the polar plate A (5) is fixedly connected with a pin B (11), and the lower part of the polar plate B (6) is fixedly connected with a pin A (9).
4. A bi-directional ESD diode as set forth in claim 1, wherein: the novel LED lamp is characterized by further comprising a base (7) and a cover plate (10), wherein the pins A (9) and the pins B (11) are respectively embedded in the bottom through holes of the hollow base (7) at intervals, and the cover plate (10) is fixedly installed on the opening edge of the base (7) in an embedded mode.
5. The bi-directional ESD diode of claim 4, wherein: the base (7) and the cover plate (10) are both made of metal ceramics.
6. A bi-directional ESD diode according to claim 4 or 5, wherein: the base (7) and the cover plate (10) are rectangular in external.
7. A bi-directional ESD diode as set forth in claim 1, wherein: and an insulating layer (8) is arranged between the gaps of the plurality of superposed rectifier chips A (1), the plurality of superposed rectifier chips B (2), the electrode plates A (3) and the electrode plates B (4).
8. A bi-directional ESD diode as set forth in claim 1, wherein: the plurality of rectifier chips A (1) and the plurality of rectifier chips B (2) are arranged in two rows in an anti-parallel manner and are vertically and fixedly arranged on the polar plate B (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921121653.XU CN210092079U (en) | 2019-07-17 | 2019-07-17 | Bidirectional ESD diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921121653.XU CN210092079U (en) | 2019-07-17 | 2019-07-17 | Bidirectional ESD diode |
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| Publication Number | Publication Date |
|---|---|
| CN210092079U true CN210092079U (en) | 2020-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921121653.XU Active CN210092079U (en) | 2019-07-17 | 2019-07-17 | Bidirectional ESD diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379806A (en) * | 2019-07-17 | 2019-10-25 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of bi-directional ESD diode and preparation method thereof |
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2019
- 2019-07-17 CN CN201921121653.XU patent/CN210092079U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379806A (en) * | 2019-07-17 | 2019-10-25 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of bi-directional ESD diode and preparation method thereof |
| CN110379806B (en) * | 2019-07-17 | 2024-04-16 | 中国振华集团永光电子有限公司（国营第八七三厂） | Bidirectional ESD diode and manufacturing method thereof |
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