CN217135390U - Single-phase three-level unit and frequency converter - Google Patents

Abstract

The embodiment of the utility model provides a single-phase three-level unit and converter relates to converter technical field. The unit includes: the unit comprises a bottom copper bar, wherein main components of the unit are attached to the bottom copper bar, a first IGBT module and a second IGBT module are arranged in a row, the first IGBT module and a fourth IGBT module are arranged in a row, a collector electrode of the first IGBT module and an emitter electrode of the fourth IGBT module are positioned in a row and face the outer side of the bottom copper bar, and a collector electrode of the second IGBT module and an emitter electrode of the third IGBT module are positioned in a row and face the inner side of the bottom copper bar; the first diode module is located between first IGBT module and second IGBT module, and the second diode module is located between third IGBT module and fourth IGBT module, and first resistance sets up between first diode module and second diode module. Horizontal flat vertical wiring between components and parts is realized through this kind of mode of arranging for the electric current of double-deck copper bar is more unobstructed, improves the current capacity of double-deck copper bar.

Description

Single-phase three-level unit and frequency converter

Technical Field

The utility model relates to a converter technical field especially relates to a single-phase three-level unit and converter.

Background

At present, the production of coal mine enterprises needs a frequency converter with 3300V voltage level to meet the production requirement. Because the power required by the mining equipment is large, an I-type three-level topology with the advantages of small switching loss, high power factor and the like becomes an indispensable part of the mining frequency converter industry. However, the I-type three-level frequency converter has more components and parts, the laminated copper bar is complicated to wire, and the layout mode of the components on the laminated copper bar in the prior art has the problems of unsmooth current of the laminated copper bar, poor overcurrent capacity and the like.

SUMMERY OF THE UTILITY MODEL

The utility model provides a single-phase three-level unit and converter aims at solving the current that components and parts on the stromatolite copper bar in the present single-phase three-level unit layout mode leads to the stromatolite copper bar unsmooth, the poor problem of current foldability.

In a first aspect, an embodiment of the present invention provides a single-phase three-level unit, which includes: the IGBT module comprises a first IGBT module, a second IGBT module, a third IGBT module, a fourth IGBT module, a first diode module, a second diode module and a first resistor, wherein an emitter of the first IGBT module is respectively connected with a collector of the second IGBT module and a cathode of the first diode module; the emitter of the second IGBT module is connected to the collector of the third IGBT module; an emitter of the third IGBT module is respectively connected with a collector of the fourth IGBT module and an anode of the second diode module; the anode of the first diode module is connected to the cathode of the second diode module, and the first resistor is connected between the cathode of the first diode module and the anode of the second diode module; the double-layer copper bar comprises a bottom-layer copper bar, the first IGBT module, the second IGBT module, the third IGBT module, the fourth IGBT module, the first diode module, the second diode module and the first resistor are all attached to the bottom-layer copper bar, the first IGBT module and the second IGBT module are arranged in a row, the first IGBT module and the fourth IGBT module are arranged in a row, a collector electrode of the first IGBT module and an emitter electrode of the fourth IGBT module are arranged in a row and face the outer side of the bottom-layer copper bar, and a collector electrode of the second IGBT module and an emitter electrode of the third IGBT module are arranged in a row and face the inner side of the bottom-layer copper bar; the first diode module is located between the first IGBT module and the second IGBT module, the second diode module is located between the third IGBT module and the fourth IGBT module, and the first resistor is arranged between the first diode module and the second diode module.

The technical scheme includes that the IGBT module further comprises a top copper bar and two groups of filter capacitors, each group of filter capacitors comprises three filter capacitors, one ends of the three filter capacitors are electrically connected with the first IGBT module through the top copper bar, and the other group of filter capacitors comprises three filter capacitors, one ends of the three filter capacitors are electrically connected with the fourth IGBT module through the top copper bar.

According to a further technical scheme, one end of each of three filter capacitors in one group of filter capacitors is connected with a collector electrode of the first IGBT module through a first conductive part, one end of each of three filter capacitors in the other group of filter capacitors is connected with an emitter electrode of the fourth IGBT module through a second conductive part, and the first conductive part and the second conductive part penetrate through a conductive hole of the top copper bar layer and a through hole of the bottom copper bar layer.

The technical scheme is that insulation grooves are formed between a collector electrode and an emission set of the IGBT module and between an anode and a cathode of the diode module, and insulation strips matched with the insulation grooves are arranged at the corresponding positions of the bottom copper bar and the insulation grooves.

The further technical scheme is that an insulating plate is arranged between the bottom copper bar and the top copper bar.

According to a further technical scheme, the copper busbar structure further comprises an output terminal, a neutral line terminal, a positive input terminal and a negative input terminal, wherein the output terminal is electrically connected with the bottom-layer copper bar, and the neutral line terminal, the positive input terminal and the negative input terminal are electrically connected with the top-layer copper bar.

The technical scheme is that the LED lamp further comprises a water-cooling substrate, wherein the first IGBT module, the second IGBT module, the third IGBT module, the fourth IGBT module, the first diode module, the second diode module and the first resistor are all attached to the water-cooling substrate and between the bottom copper bars.

The further technical scheme is that the first conductive part and the second conductive part are bolts.

In a second aspect, the present invention further provides a frequency converter, which comprises a plurality of the single-phase three-level unit of any one.

The further technical scheme is that the frequency converter comprises a rectifying circuit, an energy storage circuit, a control circuit and an inverter circuit, wherein the inverter circuit is composed of three single-phase three-level units.

The embodiment of the utility model provides a single-phase three-level unit and converter, arrange according to centrosymmetric mode of putting through two IGBT modules adjacent with the syntropy in the single-phase three-level unit, the collecting electrode of first IGBT module and the projecting pole of fourth IGBT module are located one row and towards the bottom copper bar outside promptly, the collecting electrode of second IGBT module and the projecting pole of third IGBT module are located one row and towards the bottom copper bar inboard, other components and parts are also arranged according to centrosymmetric mode, transversely flat vertical wiring between components and parts is realized through this kind of mode of arranging, make the electric current of double-deck copper bar more unobstructed, improve the ability of overflowing of double-deck copper bar.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without any creative effort.

Fig. 1 is a schematic circuit diagram of a single-phase three-level unit according to an embodiment of the present invention;

fig. 2 is a schematic layout diagram of a bottom copper bar of a single-phase three-level unit according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a partial explosion of a single-phase three-level unit according to an embodiment of the present invention;

fig. 4 is an exploded schematic diagram of a single-phase three-level unit according to an embodiment of the present invention;

fig. 5 is a schematic top view of a circuit of a single-phase three-level unit according to an embodiment of the present invention.

Reference numerals

The structure comprises a double-layer copper bar 1, a bottom copper bar 11, a through hole 111, an IGBT module 112, a diode module 113, a resistor 114, a top copper bar 12, a filter capacitor 121, a first conductive part 21, a second conductive part 22, a conductive hole 3, an insulation groove 4, an output terminal 5, a neutral line terminal 6, a positive input terminal 7, a negative input terminal 8 and a water-cooling substrate 9.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, wherein like component numbers represent like components. It is obvious that the embodiments to be described below are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

It is also to be understood that the terminology used in the description of the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the invention. As used in the description of the embodiments of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

Please refer to fig. 1-5, which illustrate a single-phase three-level unit according to an embodiment of the present invention. The unit includes: the IGBT module comprises a first IGBT module 112(T1), a second IGBT module 112(T2), a third IGBT module 112(T3), a fourth IGBT module 112(T4), a first diode module 113(D1), a second diode module 113(D2), and a first resistor 114(R1), wherein an emitter E of the first IGBT module 112(T1) is connected to a collector C of the second IGBT module 112(T2) and a cathode K of the first diode module 113(D1), respectively; the emitter E of the second IGBT module 112(T2) is connected to the collector C of the third IGBT module 112 (T3); the emitter E of the third IGBT module 112(T3) is connected to the collector C of the fourth IGBT module 112(T4) and the anode a of the second diode module 113(D2), respectively; the anode a of the first diode module 113(D1) is connected to the cathode K of the second diode module 113(D2), and the first resistor 114(R1) is connected between the cathode K of the first diode module 113(D1) and the anode a of the second diode module 113 (D2); the unit also comprises a double-layer copper bar 1, wherein the double-layer copper bar 1 comprises a bottom layer copper bar 11, the first IGBT module 112(T1), the second IGBT module 112(T2), the third IGBT module 112(T3), the fourth IGBT module 112(T4), the first diode module 113(D1), the second diode module 113(D2) and the first resistor 114(R1) are all attached to the bottom layer copper bar 11, the first IGBT module 112(T1) and the second IGBT module 112(T2) are disposed in one column, the first IGBT module 112(T1) and the fourth IGBT module 112(T4) are disposed in a row, the collector C of the first IGBT module 112(T1) and the emitter E of the fourth IGBT module 112(T4) are located in a row and face the outside of the underlying copper bar 11, the collector C of the second IGBT module 112(T2) and the emitter E of the third IGBT module 112(T3) are located in a row and face the inside of the bottom copper bar 11; the first diode module 113(D1) is located between the first IGBT module 112(T1) and the second IGBT module 112(T2), the second diode module 113(D2) is located between the third IGBT module 112(T3) and the fourth IGBT module 112(T4), and the first resistor 114(R1) is disposed between the first diode module 113(D1) and the second diode module 113 (D2). In one embodiment, the first resistor 114(R1) is disposed between the first diode module 113(D1) and the second diode module 113(D2) and near the second IGBT module 112(T2) and the third IGBT module 112 (T3).

Specifically, in an embodiment, two equidirectional adjacent IGBT modules 112 in the single-phase three-level unit are arranged according to a centrosymmetric arrangement mode, that is, the collector C of the first IGBT module 112(T1) and the emitter E of the fourth IGBT module 112(T4) are located in one row and face the outer side of the bottom copper bar 11, the collector C of the second IGBT module 112(T2) and the emitter E of the third IGBT module 112(T3) are located in one row and face the inner side of the bottom copper bar 11, and other components are also arranged according to a centrosymmetric mode, and horizontal and vertical wiring among the components is realized through the arrangement mode, so that a current loop is greatly shortened, the current of the double-layer copper bar 1 is smoother, and the overcurrent capacity of the double-layer copper bar 1 is improved.

It should be noted that, according to the arrangement mode, only two layers of copper bars are needed to realize a single-phase three-level unit, and the number of layers of the laminated copper bars is less compared with that of the laminated copper bars in the prior art; meanwhile, referring to the circuit schematic diagram of the single-phase three-level unit in fig. 1, in the above arrangement, the positive input terminal 7(+) loop and the neutral terminal 6(M) loop are stacked together, and the negative input terminal 8(-) loop and the neutral terminal 6(M) loop are stacked together, which is beneficial to reducing the stray inductance of the main loop, increasing the area of copper laid on the copper bar to make the overcurrent area of the copper bar larger, and thus improving the overcurrent capacity of the double-layer copper bar 1. Specifically, in the present embodiment, under a high voltage input of 3300V, the overcurrent capacity of the double-layer copper bar 1 reaches 600A required by the mining equipment.

Further, the single-phase three-level unit further includes a top copper bar 12 and two sets of filter capacitors 121, each set of filter capacitors 121 includes three filter capacitors 121, wherein one end of each of the three filter capacitors 121 in one set of filter capacitors 121 is electrically connected to the first IGBT module 112(T1) through the top copper bar 12, and one end of each of the three filter capacitors 121 in the other set of filter capacitors 121 is electrically connected to the fourth IGBT module 112(T4) through the top copper bar 12. Specifically, in an embodiment, the two sets of filter capacitors 121 are directly electrically connected to the first IGBT module 112(T1) or the fourth IGBT module 112(T4), so that unnecessary current loops are reduced, a transmission path of current between the filter capacitors 121 and the first IGBT module 112(T1) and the fourth IGBT module 112(T4) is shortened, stray inductance is effectively reduced, and voltage spikes when the IGBTs are turned off can be well suppressed.

Further, one end of each of three filter capacitors 121(C1-C3) in one set of filter capacitors 121 is connected to the collector C of the first IGBT module 112(T1) by a first conductive component 21, one end of each of three filter capacitors 121(C4-C6) in the other set of filter capacitors 121 is connected to the emitter E of the fourth IGBT module 112(T4) by a second conductive component 22, and the first conductive component 21 and the second conductive component 22 pass through the conductive hole 3 of the top copper bar 12 and the through hole 111 of the bottom copper bar 11. Specifically, in an embodiment, the pin of the filter capacitor 121(C1-C6) is directly connected to the pin of the IGBT module 112(T1, T4) through the conductive component 2, so that an unnecessary current loop is greatly reduced, and a voltage spike when the IGBT is turned off is well suppressed.

Note that, the IGBT module 112 used in this embodiment is a module with a voltage class of 4500V and a current class of 1200A, and is formed by packaging 3 IGBTs in parallel, so that one IGBT module 112 has 3 collectors C and 3 emitters E, for example: the ABB module is 5SNA 1200G450350 module and Hitachi module is BN1500FH45F-H module; the diode module 113 is a module in which 2 diodes are packaged in parallel.

Further, an insulation groove 4 is arranged between the collector C and the emitter of the IGBT module 112 and between the anode a and the cathode K of the diode module 113, and an insulation strip matched with the insulation groove 4 is arranged at a position corresponding to the insulation groove 4 on the bottom copper bar 11. Specifically, in one embodiment, the insulating strips with the grooves are arranged between different polarities of the components, so that the problem that the creepage distance is increased due to the rise of voltage is effectively solved, wherein the insulating strips are not shown in the figure.

Further, an insulating plate is arranged between the bottom copper bar 11 and the top copper bar 12. Specifically, in an embodiment, insulating plates are added between the bottom copper bar 11 and the top copper bar 12 and between copper bars with different polarities on the same layer, so as to meet the requirement of partial discharge and achieve electrical isolation between copper bars with different polarities on the same layer, where the insulating plates are not shown in the figure.

Further, the single-phase three-level unit further includes an output terminal 5(U, V, W), a neutral line terminal 6(M), a positive input terminal 7(+) and a negative input terminal 8(-), wherein the output terminal 5(U, V, W) is electrically connected to the bottom copper bar 11, and the neutral line terminal 6(M), the positive input terminal 7(+) and the negative input terminal 8(-) are electrically connected to the top copper bar 12. Specifically, in one embodiment, as shown in fig. 4, the output terminal 5(U, V, W), the neutral line terminal 6(M), the positive input terminal 7(+) and the negative input terminal 8(-) of the cell are all located on different copper bars, so that electrical isolation is achieved between different polarities.

Further, the single-phase three-level unit further includes a water-cooling substrate 9, and the first IGBT module 112(T1), the second IGBT module 112(T2), the third IGBT module 112(T3), the fourth IGBT module 112(T4), the first diode module 113(D1), the second diode module 113(D2), and the first resistor 114(R1) are all attached between the water-cooling substrate 9 and the bottom copper bar 11. Specifically, in an embodiment, the other surface of the main heat-generating component in the unit is attached to the water-cooling substrate 9, so that the heat dissipation of the component is more uniform, and the heat dissipation performance of the single-phase three-level unit is improved.

Further, the first conductive member 21 and the second conductive member 22 are bolts. Specifically, in one embodiment, the plurality of filter capacitors 121(C1) are fixedly electrically connected to the first IGBT module 112(T1) and the fourth IGBT module 112(T4) by bolts. Specifically, other fixable conductive connectors may be selected for the first conductive component 21 and the second conductive component 22.

In a second aspect, the present invention further provides a frequency converter, which comprises a plurality of the single-phase three-level unit of any one. Specifically, in an embodiment, the frequency converter composed of a plurality of single-phase three-level units has good overcurrent capacity and small stray inductance, and is convenient to assemble and debug, and the production efficiency is improved.

Further, the frequency converter is applied to mining 3300V voltage class equipment, and it includes rectifier circuit, tank circuit, control circuit and inverter circuit, wherein the inverter circuit comprises three single-phase three-level unit. Specifically, in an embodiment, each unit of the inverter circuit adopts a modular design, so that the inverter circuit is convenient to disassemble and assemble, and can realize independent maintenance of each phase unit in a mining production environment with severe working conditions, so that the inverter circuit is more convenient to maintain, and the maintenance cost of equipment is reduced.

It should be noted that, in the embodiment of the present invention, the power components in the single-phase three-level unit are reasonable in layout and easy to implement, and have a compact structure, which is convenient for product combination, greatly improves the power density of the frequency converter, facilitates power expansion, facilitates the assembly and maintenance of the device, and improves the stability and reliability of the device; and meets the requirements of RoHS (Restriction of hazardous Substances in electrical and electronic equipment), and is more suitable for SMT (Surface Mount Technology) processing Technology.

In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.

It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, while the invention has been described with respect to certain embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

The above description is for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope of the present invention, and these modifications or replacements should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A single-phase three-level unit comprises a first IGBT module, a second IGBT module, a third IGBT module, a fourth IGBT module, a first diode module, a second diode module and a first resistor, wherein an emitting electrode of the first IGBT module is respectively connected with a collecting electrode of the second IGBT module and a cathode of the first diode module; the emitter of the second IGBT module is connected to the collector of the third IGBT module; an emitter of the third IGBT module is respectively connected with a collector of the fourth IGBT module and an anode of the second diode module; the anode of the first diode module is connected to the cathode of the second diode module, and the first resistor is connected between the cathode of the first diode module and the anode of the second diode module;

the double-layer copper bar is characterized by further comprising a double-layer copper bar, wherein the double-layer copper bar comprises a bottom copper bar, the first IGBT module, the second IGBT module, the third IGBT module, the fourth IGBT module, the first diode module, the second diode module and the first resistor are all attached to the bottom copper bar, the first IGBT module and the second IGBT module are arranged in a row, the first IGBT module and the fourth IGBT module are arranged in a row, a collector electrode of the first IGBT module and an emitter electrode of the fourth IGBT module are arranged in a row and face the outer side of the bottom copper bar, and a collector electrode of the second IGBT module and an emitter electrode of the third IGBT module are arranged in a row and face the inner side of the bottom copper bar; the first diode module is located between the first IGBT module and the second IGBT module, the second diode module is located between the third IGBT module and the fourth IGBT module, and the first resistor is arranged between the first diode module and the second diode module.

2. The single-phase three-level unit as recited in claim 1, further comprising a top copper bar and two sets of filter capacitors, wherein each set of filter capacitors comprises three filter capacitors, wherein one end of each of the three filter capacitors of one set of filter capacitors is electrically connected to the first IGBT module through the top copper bar, and one end of each of the three filter capacitors of the other set of filter capacitors is electrically connected to the fourth IGBT module through the top copper bar.

3. The single-phase three-level unit as claimed in claim 2, wherein one end of each of three filter capacitors in one set of filter capacitors is connected to the collector of the first IGBT module by a first conductive component, one end of each of three filter capacitors in the other set of filter capacitors is connected to the emitter of the fourth IGBT module by a second conductive component, and the first conductive component and the second conductive component pass through the conductive hole of the top copper bar and the through hole of the bottom copper bar.

4. The single-phase three-level unit as claimed in claim 1, wherein insulation trenches are disposed between the collector and the emitter of the IGBT module and between the anode and the cathode of the diode module, and insulation bars matched with the insulation trenches are disposed at corresponding positions of the bottom copper bar and the insulation trenches.

5. The single-phase three-level unit as claimed in claim 2, wherein an insulating plate is disposed between the bottom layer of copper bars and the top layer of copper bars.

6. The single-phase three-level unit according to claim 2, further comprising an output terminal, a neutral terminal, a positive input terminal, and a negative input terminal, wherein the output terminal is electrically connected to the bottom copper bar, and the neutral terminal, the positive input terminal, and the negative input terminal are electrically connected to the top copper bar.

7. The single-phase three-level unit according to claim 1, further comprising a water-cooled substrate, wherein the first IGBT module, the second IGBT module, the third IGBT module, the fourth IGBT module, the first diode module, the second diode module and the first resistor are all attached between the water-cooled substrate and the bottom copper bar.

8. The single-phase three-level unit according to claim 3, wherein the first conductive member and the second conductive member are bolts.

9. A frequency converter comprising a plurality of single-phase three-level units according to any one of claims 1 to 8.

10. The frequency converter of claim 9, comprising a rectification circuit, a tank circuit, a control circuit, and an inverter circuit, wherein the inverter circuit is comprised of three of the single-phase three-level cells.

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