CN112436737B - Laminated busbar structure suitable for parallel and modular application of discrete devices - Google Patents
Laminated busbar structure suitable for parallel and modular application of discrete devices Download PDFInfo
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- CN112436737B CN112436737B CN202011265986.7A CN202011265986A CN112436737B CN 112436737 B CN112436737 B CN 112436737B CN 202011265986 A CN202011265986 A CN 202011265986A CN 112436737 B CN112436737 B CN 112436737B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to a laminated busbar structure suitable for parallel and modular application of discrete devices, and belongs to the technical field of semiconductor devices. The laminated busbar comprises an alternating current output busbar, a positive busbar and a negative busbar, wherein the negative busbar is used for connecting a lower bridge arm power device and a negative end of a capacitor module, the positive busbar is used for connecting the upper bridge arm power device and the positive end of the capacitor module, and the alternating current output busbar is connected with the positive busbar through the upper bridge arm power device and is connected with the negative busbar through the lower bridge arm power device. The laminated busbar structure applicable to parallel connection is formed by combining a plurality of laminated busbar units and a plurality of groups of discrete devices, parasitic inductance is reduced, the difference of inductance of each branch is very small, the laminated busbar structure is applicable to various current levels by reducing the number of devices in the longitudinal direction, the whole busbar structure can be horizontally copied to form a three-phase system, assembly and maintenance are facilitated, and the modularized characteristic enables the laminated busbar structure to have wider applicability.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a laminated busbar structure suitable for parallel and modular application of discrete devices.
Background
In the high-power electronic device, a power semiconductor device is electrically connected with a capacitor module and an alternating current end through a laminated busbar. However, the unreasonable design of the busbar structure brings larger parasitic inductance, so that larger voltage overshoot is generated in the turn-off transient state of the power device, and the safe operation of the device is threatened. And with the gradual use of devices with fast on-off capability, such as SiC MOSFETs, the parasitic inductance of the same level will bring larger overvoltage, so that it is very important to develop a bus bar structure with low parasitic inductance.
A single discrete device has low current-carrying capacity, and in order to improve the power output capability of a high-power electronic device, a plurality of power devices are generally used in parallel. The parallel discrete devices are connected through the laminated busbar, if the parallel devices are not properly arranged, the parasitic inductance and resistance parameters of each parallel branch circuit are asymmetric, and further the current distribution of the devices is uneven, the current of the devices is used in a derating mode, and the effective utilization rate of the current capacity of the devices is reduced.
Compared to power modules, especially SiC-type devices, the cost of discrete devices is much lower than modules. However, the parallel application scheme of discrete devices is inferior to the power module in characteristics of power density, layout simplicity and the like. Therefore, the parallel structure of the discrete devices needs to be designed in a modularized way, so that the characteristics of expandable application, convenience in installation and maintenance and the like are realized.
The laminated busbar structure which is low in parasitic inductance and suitable for parallel connection of devices, disclosed in the Chinese invention patent application publication (CN111277150A), arranges an alternating current output conductor layer, a positive bus conductor layer and a negative bus conductor layer at intervals, reduces the parasitic inductance of branches when the devices are connected in parallel, and improves the utilization rate of the circuit on current; meanwhile, the connecting path between the parallel devices and the capacitance bus is greatly reduced, the current of each parallel device is effectively balanced, and the dynamic non-uniform fluidity is reduced. However, this structure has the following disadvantages:
1. the structure does not consider the modular application of the laminated busbar structure;
2. the structure does not take into account a symmetric layout.
The invention discloses an integrated laminated busbar mechanism based on a commutation loop, which is disclosed in the Chinese invention patent application publication (CN111508743A), and the whole space is saved through an integrated structure; and a welding form is adopted, so that a complex switching bus bar is omitted, the area of a diode bridge bus bar is reduced, and the stray inductance of a loop is reduced. However, this structure has the following disadvantages:
1. the integrated laminated busbar with the structure is not even in number of diodes, the structure is asymmetric, a compression joint structure has spare space, and the space utilization rate is not high;
2. the connection paths of each diode and each capacitor of the structure are unequal, and the current of the parallel devices is unbalanced.
Disclosure of Invention
The invention aims to provide a laminated busbar structure which is low in inductance and suitable for parallel connection of discrete devices and module application. The laminated busbar structure can reduce parasitic inductance of each parallel loop, can reduce difference of parasitic parameters of each branch circuit, realizes symmetrical layout and is beneficial to parallel application of devices. Besides, the structure takes a single-phase half-bridge topology as a unit, and the modular design is realized.
The invention aims to realize the purpose, and provides a laminated busbar structure suitable for parallel connection and modular application of discrete devices, wherein the laminated busbar comprises an alternating current output busbar, a negative electrode busbar and a positive electrode busbar; the discrete device consists of a switch device packaging structure and four cylindrical pins, wherein the four cylindrical pins are distributed on one side edge outside the packaging structure and sequentially comprise a drain electrode pin, a source electrode pin, a driving source electrode pin and a driving gate electrode pin;
the negative busbar is a rectangular copper plate, two long sides of the copper plate are respectively a long side A1 and a long side A2, and the long side A1 is upper; n negative busbar upper bridge arm capacitor terminals are uniformly distributed at the edge of the long edge A1, and N negative busbar lower bridge arm capacitor terminals are uniformly distributed at the edge of the long edge A2; a strip-shaped upper bridge arm power device through groove and a row of N negative busbar lower bridge arm power device terminals are arranged between the long edge A1 and the long edge A2 and are parallel to the long edge; two negative busbar driving pin holes are formed in the left side of each negative busbar lower bridge arm power device terminal, a negative busbar drain electrode pin hole is formed in the right side of each negative busbar lower bridge arm power device terminal, the positions of the two negative busbar driving pin holes are respectively corresponding to the positions of a driving gate electrode pin and a driving source electrode pin, the position of each negative busbar lower bridge arm power device terminal is corresponding to the position of the corresponding source electrode pin, and the position of each negative busbar drain electrode pin hole is corresponding to the position of the corresponding drain electrode pin;
the material, the shape and the size of the positive busbar are the same as those of the negative busbar, N positive busbar upper bridge arm capacitor terminals are uniformly distributed at the edge of a long edge A1 of the positive busbar, and N lower bridge arm capacitor terminals are uniformly arranged at the edge of a long edge A2 of the positive busbar; a row of N positive busbar upper bridge arm power device terminals and a strip-shaped lower bridge arm power device through groove are arranged between the long side A1 and the long side A2 of the positive busbar in parallel with the long side; a positive busbar source pin hole and two positive busbar driving pin holes are sequentially arranged on the right side of each positive busbar upper bridge arm power device terminal, the position of the positive busbar upper bridge arm power device terminal is arranged corresponding to the position of the drain pin, the position of the positive busbar source pin hole is arranged corresponding to the position of the source pin, and the positions of the two positive busbar driving pin holes are respectively arranged corresponding to the positions of the driving source pin and the driving gate pin; the positions of N positive busbar upper bridge arm capacitance terminals and N positive busbar lower bridge arm capacitance terminals are staggered from the positions of N negative busbar upper bridge arm capacitance terminals and N negative busbar lower bridge arm capacitance terminals by one capacitance terminal;
the material and the appearance of the alternating current output bus bar are the same as those of the negative electrode bus bar, and an upward alternating current output end is arranged at the center of the alternating current output bus bar; a row of N AC output bus upper bridge arm power device terminals and a row of N AC output bus lower bridge arm power device terminals are uniformly arranged on the AC output bus; the left side of a bridge arm power device terminal on each alternating current output busbar is provided with an alternating current output busbar drain electrode pin hole, the right side of the bridge arm power device terminal on each alternating current output busbar is provided with two alternating current output busbar driving pin holes, the position of the alternating current output busbar drain electrode pin hole corresponds to the position of the bridge arm power device terminal on the positive busbar, the position of the bridge arm power device terminal on the alternating current output busbar corresponds to the position of the positive busbar source electrode pin hole, and the positions of the two alternating current output busbar driving pin holes respectively correspond to the positions of the two positive busbar driving pin holes; two alternating current output busbar driving pin holes and one alternating current output busbar source electrode pin hole are arranged on the left side of each alternating current output busbar lower bridge arm power device terminal from left to right, the positions of the two alternating current output busbar driving pin holes are respectively arranged corresponding to the positions of the two negative electrode busbar driving pin holes, the positions of the alternating current output busbar source electrode pin holes are arranged corresponding to the positions of the negative electrode busbar lower bridge arm power device terminals, and the positions of the alternating current output busbar lower bridge arm power device terminals are arranged corresponding to the positions of the negative electrode busbar drain electrode pin holes;
the alternating current output busbar, the positive busbar and the negative busbar are pressed together from top to bottom to form a laminated busbar, wherein each negative busbar lower bridge arm power device terminal sequentially penetrates through a lower bridge arm power device through groove on the positive busbar and an alternating current output busbar source electrode pin hole on the alternating current output busbar, and then forms a laminated busbar lower bridge arm unit together with two alternating current output busbar driving pin holes on the left side and an alternating current output busbar lower bridge arm power device terminal on the right side; after each bridge arm power device on the positive busbar penetrates through a drain pin hole of an alternating current output busbar on the alternating current output busbar, the bridge arm power device on the alternating current output busbar on the right side and two driving pin holes of the alternating current output busbar on the right side form a laminated busbar upper bridge arm unit; on the laminated busbar, N laminated busbar upper bridge arm units and N laminated busbar lower bridge arm units are formed, and the laminated busbar upper bridge arm units and the laminated busbar lower bridge arm units which belong to the same bridge arm at corresponding positions form a laminated busbar unit;
the discrete devices comprise N groups, each group comprises two discrete devices, the two discrete devices and a laminated busbar arm unit are combined to form a laminated busbar unit structure suitable for the discrete devices and modular application, wherein a drain pin of one discrete device is connected with an upper bridge arm power device of a positive busbar in the laminated busbar unit, and a source pin of the discrete device is connected with a terminal of an upper bridge arm power device of an alternating current output busbar in the laminated busbar unit; a drain electrode pin of the other discrete device is connected with an alternating current output bus lower bridge arm power device in the laminated bus unit, and a source electrode pin is connected with a negative bus lower bridge arm power device terminal in the laminated bus unit;
the combination of the N laminated busbar units and the N groups of discrete devices forms a laminated busbar structure suitable for the parallel connection and the modularization application of the N groups of discrete devices.
Preferably, N is a positive integer.
Preferably, when the alternating current output busbar, the positive busbar and the negative busbar are pressed together to form the laminated busbar, a layer of insulating film is adhered between the alternating current output busbar and the positive busbar and between the positive busbar and the negative busbar, and a layer of insulating film is adhered to the bottom surface of the negative busbar.
Preferably, the ac output bus-bar upper bridge arm power device terminal, the ac output bus-bar lower bridge arm power device, the positive bus-bar upper bridge arm power device, and the negative bus-bar lower bridge arm power device terminal in claim 1 are collectively referred to as a terminal, the drain electrode pin, the source electrode pin, the driving source electrode pin, and the driving gate electrode pin are collectively referred to as a pin, the terminal is cylindrical, a through groove with a wide top and a narrow bottom is formed inside the terminal, the size of the top of the through groove is 1.01-1.1 times of the size of the pin, and the size of the bottom of the through groove is the same as the size of the pin.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the upper and lower bridge arm power devices are symmetrically distributed through the parallel connection of the unit laminated busbars, so that parasitic inductance is reduced, and the difference of the inductances of all branches is very small;
2. the laminated layers of the busbars are arranged, so that the connection path of a power device and a capacitor is reduced, and the current of each parallel branch circuit is effectively balanced;
3. the increase or reduction of accessible device quantity on vertical is applicable in the condition of various current levels, can duplicate whole mother board structure in horizontal and form three-phase system, is convenient for assemble and maintain, and this kind of modular characteristics can make this patent mother board structure have more extensive suitability.
Drawings
FIG. 1 is a circuit topology diagram of a package structure in an embodiment of the invention;
fig. 2 is a schematic structural diagram of a laminated busbar structure suitable for discrete device parallel and modular application in the embodiment of the invention;
FIG. 3 is a schematic diagram of a discrete device in an embodiment of the invention;
fig. 4 is a schematic structural diagram of a negative electrode busbar according to an embodiment of the invention;
fig. 5 is a schematic structural diagram of a positive electrode busbar according to an embodiment of the invention;
fig. 6 is a schematic structural diagram of an ac output busbar according to an embodiment of the present invention;
FIG. 7 is a diagram of the upper and lower structure of the laminated busbar according to the embodiment of the present invention;
fig. 8 is a terminal structure diagram of a power device in the embodiment of the present invention.
Detailed Description
The technical scheme of the invention is clearly and completely described below with reference to the accompanying drawings.
Fig. 1 is a circuit topology diagram of a package structure 45 according to an embodiment of the present invention, and it can be seen from the diagram that in this embodiment, N is a positive integer, specifically, N is selected to be 6. Namely, the package structure 45 includes six bridge arm power devices of 12, namely, upper bridge arm power devices T1s, T2s, T3s, T4s, T5s and T6s, and lower bridge arm power devices T1x, T2x, T3x, T4x, T5x and T6 x. Each bridge arm is formed by connecting an upper bridge arm power device and a lower bridge arm power device in series, then six bridge arms are connected in parallel, the six upper bridge arm power devices are connected with the positive pole P and the alternating current output end of the direct current power supply, the six lower bridge arm power devices are connected with the negative pole Q and the alternating current output end of the direct current power supply, and a lead is connected between the six pairs of upper bridge arm power devices and the six pairs of lower bridge arm power devices to the alternating current output end AC. The power devices connected in parallel increase the total current, so that the power of the whole laminated busbar structure which can be integrated is higher. Meanwhile, the difference of parasitic parameters of all branches can be reduced, symmetrical layout is realized, and parallel application of power devices is facilitated.
Fig. 2 is a schematic structural diagram of a laminated busbar structure suitable for parallel connection and modular application of discrete devices in the embodiment of the invention, and as can be seen from fig. 2, the laminated busbar of the invention includes an ac output busbar 1, a negative electrode busbar 2, and a positive electrode busbar 3. The negative busbar 2 is used for connecting a lower bridge arm power device and a negative end of the capacitor module, the positive busbar 3 is used for connecting the upper bridge arm power device and a positive end of the capacitor module, the alternating current output busbar 1 is connected with the positive busbar 3 through the upper bridge arm power device and connected with the negative busbar 2 through the lower bridge arm power device, and therefore the single-phase half-bridge power module is formed.
Fig. 3 is a schematic diagram of a discrete device in an embodiment of the present invention, and as can be seen from fig. 3, the discrete device 4 is composed of a power device package structure 45 and four cylindrical pins, wherein the four cylindrical pins are distributed on one side edge of the exterior of the package structure 45, and are a drain pin 41, a source pin 42, a driving source pin 43 and a driving gate pin 44 in sequence. As shown in fig. 2, the laminated busbar structure in this embodiment includes 6 bridge arms, which correspond to 12 discrete devices.
Fig. 4 is a schematic structural diagram of the negative busbar 2 according to the embodiment of the present invention, and as can be seen from fig. 4, the negative busbar 2 is a rectangular copper plate, two long sides of the copper plate are a long side a1 and a long side a2, respectively, and the long side a1 is up; the edge of the long side a1 is uniformly distributed with 6 negative busbar upper bridge arm capacitor terminals 21, and the edge of the long side a2 is uniformly distributed with 6 negative busbar lower bridge arm capacitor terminals 22. A strip-shaped upper bridge arm power device through groove 24 and a row of 6 negative busbar lower bridge arm power device terminals 23 are arranged between the long side a1 and the long side a2 and are parallel to the long sides. Two negative busbar driving pin holes 61 are arranged on the left side of each negative busbar lower bridge arm power device terminal 23, one negative busbar drain pin hole 71 is arranged on the right side of each negative busbar lower bridge arm power device terminal 23, the positions of the two negative busbar driving pin holes 61 are respectively arranged corresponding to the positions of the driving gate pin 44 and the driving source pin 43, the position of the negative busbar lower bridge arm power device terminal 23 is arranged corresponding to the position of the source pin 42, and the position of the negative busbar drain pin hole 71 is arranged corresponding to the position of the drain pin 41.
Fig. 5 is a schematic structural diagram of a positive electrode busbar according to an embodiment of the present invention. As can be seen from fig. 5, the material, shape and size of the positive busbar 3 are the same as those of the negative busbar 2, 6 positive busbar upper bridge arm capacitor terminals 31 are uniformly distributed at the edge of the long side a1 of the positive busbar, and 6 negative bridge arm capacitor terminals 32 are uniformly distributed at the edge of the long side a2 of the positive busbar. Between the long side a1 and the long side a2 of the positive busbar, a row of 6 positive busbar upper arm power device terminals 33 and a strip-shaped lower arm power device through groove 34 are arranged in parallel with the long sides. A positive busbar source pin hole 81 and two positive busbar driving pin holes 62 are sequentially arranged on the right side of each positive busbar upper bridge arm power device terminal 33, the position of the positive busbar upper bridge arm power device terminal 33 corresponds to the position of the drain pin 41, the position of the positive busbar source pin hole 81 corresponds to the position of the source pin 42, and the positions of the two positive busbar driving pin holes 62 correspond to the positions of the driving source pin 43 and the driving gate pin 44 respectively. The positions of the upper bridge arm capacitor terminal 31 and the lower bridge arm capacitor terminal 32 of the 6 positive busbars are staggered from the positions of the upper bridge arm capacitor terminal 21 and the lower bridge arm capacitor terminal 22 of the 6 negative busbars by one capacitor terminal.
Fig. 6 is a schematic structural diagram of an ac output busbar 1 according to an embodiment of the present invention. As can be seen from the figure, the material and the shape of the alternating current output busbar 1 are the same as those of the negative electrode busbar 2, and an upward alternating current output end 13 is arranged at the center of the alternating current output busbar 1. A row of 6 AC output bus upper bridge arm power device terminals 11 and a row of 6 AC output bus lower bridge arm power device terminals 12 are uniformly arranged on the AC output bus. An alternating current output bus drain pin hole 72 is formed in the left side of each alternating current output bus upper bridge arm power device terminal 11, two alternating current output bus driving pin holes 63 are formed in the right side of each alternating current output bus upper bridge arm power device terminal 11, the positions of the alternating current output bus drain pin holes 72 and the positions of the positive bus upper bridge arm power device terminals 33 are arranged correspondingly, the positions of the alternating current output bus upper bridge arm power device terminals 11 and the positions of the positive bus source pin holes 81 are arranged correspondingly, and the positions of the two alternating current output bus driving pin holes 63 are arranged correspondingly to the positions of the two positive bus driving pin holes 62 respectively. Two alternating current output busbar driving pin holes 63 and one alternating current output busbar source electrode pin hole 82 are arranged on the left side of each alternating current output busbar lower bridge arm power device terminal 12 from left to right, the positions of the two alternating current output busbar driving pin holes 63 are respectively arranged corresponding to the positions of the two negative busbar driving pin holes 61, the positions of the alternating current output busbar source electrode pin holes 82 are arranged corresponding to the positions of the negative busbar lower bridge arm power device terminals 23, and the positions of the alternating current output busbar lower bridge arm power device terminals 12 are arranged corresponding to the positions of the negative busbar drain electrode pin holes 71.
Fig. 7 is a diagram of the upper and lower structure of the laminated busbar according to the embodiment of the present invention, and it can be seen from the diagram that the ac output busbar 1, the positive busbar 3, and the negative busbar 2 are pressed together from top to bottom to form the laminated busbar. Each negative busbar lower bridge arm power device terminal 23 sequentially penetrates through the lower bridge arm power device through groove 34 on the positive busbar 3 and the alternating current output busbar source pin hole 82 on the alternating current output busbar 1, and then forms a laminated busbar lower bridge arm unit together with the two alternating current output busbar driving pin holes 63 on the left side and the alternating current output busbar lower bridge arm power device terminal 12 on the right side. After each positive busbar upper bridge arm power device 33 passes through the drain pin hole 72 of the alternating current output busbar on the alternating current output busbar 1, the positive busbar upper bridge arm power device, the right alternating current output busbar upper bridge arm power device terminal 11 and the right two alternating current output busbar driving pin holes 63 form a laminated busbar upper bridge arm unit. Because N is 6, 6 laminated busbar upper bridge arm units and 6 laminated busbar lower bridge arm units are formed on the laminated busbar, and the laminated busbar upper bridge arm unit and the laminated busbar lower bridge arm unit which belong to the same bridge arm at the corresponding positions form a laminated busbar unit.
The discrete devices 4 comprise 6 groups, each group comprises two discrete devices 4, the two discrete devices 4 are combined with a laminated busbar arm unit to form a laminated busbar unit structure suitable for the discrete devices and modular application, a drain pin 41 of one discrete device 4 is connected with an upper bridge arm power device 33 of an anode busbar in the laminated busbar unit, and a source pin 42 is connected with an upper bridge arm power device terminal 11 of an alternating current output busbar in the laminated busbar unit. A drain pin 41 of another discrete device 4 is connected with the ac output bus bar lower bridge arm power device 12 in the laminated bus bar unit, and a source pin 42 is connected with the negative bus bar lower bridge arm power device terminal 23 in the laminated bus bar unit.
The combination of the 6 laminated busbar units and the 6 groups of discrete devices 4 forms a laminated busbar structure suitable for parallel connection and modular application of the 6 groups of discrete devices.
In this embodiment, when the alternating current output bus bar 1, the positive electrode bus bar 3, and the negative electrode bus bar 2 are pressed together to form the laminated bus bar, a layer of insulating film 5 is attached between the alternating current output bus bar 1 and the positive electrode bus bar 3, and between the positive electrode bus bar 3 and the negative electrode bus bar 2, and a layer of insulating film 5 is attached to the bottom surface of the negative electrode bus bar 2.
Fig. 8 is a terminal structure diagram of a power device in the embodiment of the present invention. As can be seen from the figure, in claim 1, the ac output bus upper arm power device terminal 11, the ac output bus lower arm power device 12, the positive bus upper arm power device 33, and the negative bus lower arm power device terminal 23 are collectively referred to as a terminal, the drain pin 41, the source pin 42, the driving source pin 43, and the driving gate pin 44 are collectively referred to as a pin, the terminal is cylindrical, the inside of the terminal is provided with a through groove 9 having a wide top and a narrow bottom, the top dimension of the through groove 9 is 1.01-1.1 times of the pin dimension, and the bottom dimension of the through groove 9 is the same as the pin dimension. The whole groove shape is wide at the top and narrow at the bottom, so that the discrete device 4 is convenient to be preliminarily fixed and welded, and meanwhile, the solder can be more conveniently placed in the groove. The pins of the discrete device 4 are connected with the through grooves 9 in the terminals from top to bottom.
As can be seen from the present embodiment, the discrete devices of the present invention are uniformly distributed and symmetrical to each other. Meanwhile, the number of the parallel connection of the discrete devices can be expanded, so that a single-phase power module with multiple power levels is formed. Specifically, the number of the discrete devices of the upper bridge arm and the lower bridge arm can be determined according to specific conditions, and the placing positions ensure that the alternating current output terminals of the alternating current output conducting layer are positioned in the middle of the discrete devices as much as possible so as to ensure that current paths of the discrete devices are approximately the same and form a symmetrical structure, thereby reducing the difference of inductances of the branches.
In addition, compared with the traditional busbar, the conducting layer with the same potential is divided into a plurality of layers, and a single loop is divided into a plurality of loops which are connected in parallel, so that parasitic inductance is reduced, and experiments prove that the inductance of each branch busbar is not more than 10 nH. Meanwhile, the laminated busbar structure greatly reduces the connecting path of the parallel device and the bus capacitor, and effectively balances the current of each parallel branch. Experiments prove that the laminated busbar structure can reduce the inductance difference of each parallel branch.
Claims (4)
1. A laminated busbar structure suitable for parallel connection and modular application of discrete devices is characterized in that the laminated busbar comprises an alternating current output busbar (1), a negative electrode busbar (2) and a positive electrode busbar (3); the discrete device (4) consists of a switch device packaging structure (45) and four cylindrical pins, wherein the four cylindrical pins are distributed on one side edge of the outside of the packaging structure (45) and sequentially comprise a drain electrode pin (41), a source electrode pin (42), a driving source electrode pin (43) and a driving gate electrode pin (44);
the negative busbar (2) is a rectangular copper plate, two long sides of the copper plate are respectively a long side A1 and a long side A2, and the long side A1 is upper; n negative busbar upper bridge arm capacitor terminals (21) are uniformly distributed at the edge of the long edge A1, and N negative busbar lower bridge arm capacitor terminals (22) are uniformly distributed at the edge of the long edge A2; a strip-shaped upper bridge arm power device through groove (24) and a row of N negative busbar lower bridge arm power device terminals (23) are arranged between the long edge A1 and the long edge A2 and are parallel to the long edge; two negative busbar driving pin holes (61) are arranged on the left side of each negative busbar lower bridge arm power device terminal (23), a negative busbar drain pin hole (71) is arranged on the right side of each negative busbar lower bridge arm power device terminal, the positions of the two negative busbar driving pin holes (61) are respectively arranged corresponding to the positions of a driving gate pin (44) and a driving source pin (43), the position of the negative busbar lower bridge arm power device terminal (23) is arranged corresponding to the position of a source pin (42), and the position of the negative busbar drain pin hole (71) is arranged corresponding to the position of a drain pin (41);
the material, the shape and the size of the positive busbar (3) are the same as those of the negative busbar (2), N positive busbar upper bridge arm capacitance terminals (31) are uniformly distributed at the edge of a long edge A1 of the positive busbar (3), and N lower bridge arm capacitance terminals (32) are uniformly distributed at the edge of a long edge A2 of the positive busbar (3); a row of N positive busbar upper bridge arm power device terminals (33) and a strip-shaped lower bridge arm power device through groove (34) are arranged between the long edge A1 and the long edge A2 of the positive busbar (3) and are parallel to the long edge; a positive busbar source pin hole (81) and two positive busbar driving pin holes (62) are sequentially arranged on the right side of each positive busbar upper bridge arm power device terminal (33), the position of the positive busbar upper bridge arm power device terminal (33) corresponds to the position of the drain pin (41), the position of the positive busbar source pin hole (81) corresponds to the position of the source pin (42), and the positions of the two positive busbar driving pin holes (62) respectively correspond to the positions of the driving source pin (43) and the driving gate pin (44); the positions of N positive busbar upper bridge arm capacitance terminals (31) and N positive busbar lower bridge arm capacitance terminals (32) are staggered from the positions of N negative busbar upper bridge arm capacitance terminals (21) and N negative busbar lower bridge arm capacitance terminals (22) by one capacitance terminal;
the material and the appearance of the alternating current output bus bar (1) are the same as those of the negative electrode bus bar (2), and an upward alternating current output end (13) is arranged at the center of the alternating current output bus bar (1); a row of N alternating current output bus upper bridge arm power device terminals (11) and a row of N alternating current output bus lower bridge arm power device terminals (12) are uniformly arranged on the alternating current output bus (1); an alternating current output busbar drain pin hole (72) is formed in the left side of each alternating current output busbar upper bridge arm power device terminal (11), two alternating current output busbar driving pin holes (63) are formed in the right side of each alternating current output busbar upper bridge arm power device terminal, the positions of the alternating current output busbar drain pin holes (72) correspond to the positions of the positive busbar upper bridge arm power device terminals (33), the positions of the alternating current output busbar upper bridge arm power device terminals (11) correspond to the positions of the positive busbar source pin holes (81), and the positions of the two alternating current output busbar driving pin holes (63) correspond to the positions of the two positive busbar driving pin holes (62); two alternating current output busbar driving pin holes (63) and one alternating current output busbar source electrode pin hole (82) are arranged on the left side of each alternating current output busbar lower bridge arm power device terminal (12) from left to right, the positions of the two alternating current output busbar driving pin holes (63) are respectively arranged corresponding to the positions of the two negative electrode busbar driving pin holes (61), the position of the alternating current output busbar source electrode pin hole (82) is arranged corresponding to the position of the negative electrode busbar lower bridge arm power device terminal (23), and the position of the alternating current output busbar lower bridge arm power device terminal (12) is arranged corresponding to the position of the negative electrode busbar drain electrode pin hole (71);
from top to bottom, pressing an alternating current output bus bar (1), a positive bus bar (3) and a negative bus bar (2) together to form a laminated bus bar, wherein each negative bus bar lower bridge arm power device terminal (23) sequentially penetrates through a lower bridge arm power device through groove (34) on the positive bus bar (3) and an alternating current output bus bar source pin hole (82) on the alternating current output bus bar (1) and then forms a laminated bus bar lower bridge arm unit together with two alternating current output bus bar driving pin holes (63) on the left side and an alternating current output bus bar lower bridge arm power device terminal (12) on the right side; each positive busbar upper bridge arm power device (33) penetrates through an alternating current output busbar drain electrode pin hole (72) on the alternating current output busbar (1) and then forms a laminated busbar upper bridge arm unit together with a right alternating current output busbar upper bridge arm power device terminal (11) and two right alternating current output busbar driving pin holes (63); on the laminated busbar, N laminated busbar upper bridge arm units and N laminated busbar lower bridge arm units are formed, and the laminated busbar upper bridge arm units and the laminated busbar lower bridge arm units which belong to the same bridge arm at corresponding positions form a laminated busbar unit;
the discrete devices (4) comprise N groups, each group comprises two discrete devices (4), the two discrete devices (4) are combined with a laminated busbar arm unit to form a laminated busbar unit structure suitable for the discrete devices and modular application, a drain electrode pin (41) of one discrete device (4) is connected with an upper bridge arm power device (33) of a positive busbar in the laminated busbar unit, and a source electrode pin (42) is connected with an upper bridge arm power device terminal (11) of an alternating current output busbar in the laminated busbar unit; a drain electrode pin (41) of the other discrete device (4) is connected with an alternating current output bus lower bridge arm power device (12) in the laminated bus unit, and a source electrode pin (42) is connected with a negative bus lower bridge arm power device terminal (23) in the laminated bus unit;
the combination of the N laminated busbar units and the N groups of discrete devices (4) forms a laminated busbar structure suitable for the parallel connection and the modularization application of the N groups of discrete devices.
2. The laminated busbar structure suitable for discrete device parallel and modular applications as claimed in claim 1, wherein N is a positive integer.
3. The laminated busbar structure suitable for discrete device parallel connection and modular application according to claim 1, wherein when the alternating current output busbar (1), the positive busbar (3) and the negative busbar (2) are pressed together to form the laminated busbar, a layer of insulating film (5) is adhered between the alternating current output busbar (1) and the positive busbar (3) and between the positive busbar (3) and the negative busbar (2), and a layer of insulating film (5) is adhered to the bottom surface of the negative busbar (2).
4. The laminated busbar structure suitable for discrete device parallel and modular application according to claim 1, wherein the ac output busbar upper bridge arm power device terminal (11), the ac output busbar lower bridge arm power device (12), the positive busbar upper bridge arm power device (33), and the negative busbar lower bridge arm power device terminal (23) are collectively referred to as a terminal, the drain pin (41), the source pin (42), the driving source pin (43), and the driving gate pin (44) are collectively referred to as a pin, the terminal is cylindrical, a through groove (9) with a wide top and a narrow bottom is formed in the terminal, the top size of the through groove (9) is 1.01-1.1 times of the size of the pin, and the bottom size of the through groove (9) is the same as the size of the pin.
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| CN209375475U (en) * | 2018-11-02 | 2019-09-10 | 深圳市禾望电气股份有限公司 | A kind of main drive controller and power system of electric automobile of electric car |
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| CN111277150A (en) * | 2020-02-26 | 2020-06-12 | 致瞻科技(上海)有限公司 | Laminated busbar structure with low parasitic inductance and suitable for parallel connection of devices |
| CN111554645A (en) * | 2020-04-07 | 2020-08-18 | 合肥工业大学 | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20160198562A1 (en) * | 2013-09-24 | 2016-07-07 | Michael Brubaker | Bus Structure with sealed dielectric interface to semiconductor switch package input connections for reduced terminal spacing and lower inductance while meeting regulatory requirements |
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| CN209375475U (en) * | 2018-11-02 | 2019-09-10 | 深圳市禾望电气股份有限公司 | A kind of main drive controller and power system of electric automobile of electric car |
| CN109494507A (en) * | 2018-11-16 | 2019-03-19 | 国网江苏省电力有限公司盐城供电分公司 | A kind of stack bus bar suitable for power semiconductor test |
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| CN111277150A (en) * | 2020-02-26 | 2020-06-12 | 致瞻科技(上海)有限公司 | Laminated busbar structure with low parasitic inductance and suitable for parallel connection of devices |
| CN111554645A (en) * | 2020-04-07 | 2020-08-18 | 合肥工业大学 | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar |
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