CN111554645A - Package structure of double-sided water-cooled SiC half-bridge module with integrated laminated busbar - Google Patents

Abstract

The invention discloses a double-sided water-cooled SiC half-bridge module package structure integrated with laminated busbars. The packaging structure includes a main body structure, an external connection structure and a heat dissipation device, and the external connection structure and the heat dissipation device are both connected to the main body structure. The main body structure includes an upper DBC, a lower DBC, a SiC semiconductor chip, and a gasket. The external connection structure includes a laminated busbar and an AC busbar, and the laminated busbar further includes a positive electrode busbar and a negative electrode busbar. The radiator includes two water-cooled radiators, which are respectively connected with the upper DBC and the lower DBC. The advantages of this package structure are that the value of parasitic inductance is low, the current sharing effect is good, the heat dissipation coefficient is high and the heat dissipation is balanced, which realizes the miniaturization, modularization and standardized design of the device, and can give full play to the high-speed and high-temperature characteristics of SiC devices.

Description

Package structure of double-sided water-cooled SiC half-bridge module with integrated laminated busbar

technical field

The invention relates to a semiconductor device, in particular to a double-sided water-cooled SiC half-bridge module package structure integrating a laminated busbar.

Background technique

Power semiconductor devices are the core components of power electronic converters. In recent years, with the rapid development of power electronics technology in the fields of new energy power generation and electric vehicles, and the development of wide-bandgap semiconductors such as SiC, new demands have also been placed on power semiconductor devices.

Although wide bandgap semiconductors such as SiC have higher operating temperature, higher breakdown voltage strength, higher thermal conductivity and higher switching frequency than Si-based semiconductors. However, when the traditional packaging technology based on Si power devices is used to package wide-bandgap semiconductor power devices, two major problems arise. First, the traditional packaging technology uses wire bonding to realize the complex internal interconnection in the structure, which will bring a large parasitic inductance. When the power semiconductor device is turned off, the energy stored in the large parasitic inductance will cause voltage spikes and oscillations. , and may increase losses, as the switching speed of power semiconductor devices has become faster and faster in recent years, the problem of parasitic inductance of the package has become more prominent. Therefore, in order to ensure the performance and safe operation of power devices and power electronic systems, it is necessary to reduce the parasitic inductance of the package when designing the power module package. Second, the heat dissipation method of traditional packaging technology is mostly single-sided heat dissipation, so the heat dissipation efficiency is poor. SiC devices can work at higher temperatures, so they have higher requirements for heat dissipation. If there is no efficient heat dissipation method, the reliability of the module will be affected.

Therefore, the development of a package structure with low parasitic inductance and efficient heat dissipation has become a hot research issue, which includes in-depth theoretical analysis in academic papers and practical engineering methods, such as the invention patent "Double-Sided Heat Dissipation" Packaging Structure and Processing Technology of IPM Hybrid Module" (CN109920785A) and "Three-dimensional stacked packaging structure of semiconductor devices with double-sided water cooling with fixing device" (CN103367278A).

"Packaging structure and processing technology of double-sided heat dissipation IPM hybrid module" disclosed in the Chinese Patent Application Publication The board is connected to the lead frame, reducing the bonding wire and improving the reliability of the module; and then replacing the solder layer between the chip and the substrate with a nano-silver interconnect layer, which helps to exert the high temperature characteristics of the SiC material, while improving the heat from the chip to the substrate. Therefore, the maximum temperature of the IPM hybrid module is reduced, and the service life of the module is improved. However, this structure has the following shortcomings:

1. This structure does not consider the method of reducing power terminals, and most of the inductance of the package structure comes from the power terminals:

2. This structure does not use water cooling for heat dissipation and cannot meet the requirements of high-power devices

"Three-dimensional stacked packaging structure of semiconductor devices with double-sided water cooling with fixing device" disclosed in the Chinese Patent Application Publication , The use of double-sided water-cooling heat dissipation, with small size, large integrated power, large heat dissipation coefficient. At the same time, each laminated board can encapsulate any number of semiconductor components with the same or different sizes, and the preset fixing structure effectively prevents the semiconductor components from slipping when subjected to external shocks, and the variable connectors prevent the components from When working, it is subjected to shock, vibration, thermal expansion and contraction, etc., resulting in deformation or even damage to the SiC semiconductor chip. Each laminated board is equipped with a temperature and pressure detection device to prevent the life loss of the SiC semiconductor chip caused by improper use of the environment. However, this structure has the following shortcomings:

1. The structure does not consider the balanced heat dissipation of each SiC semiconductor chip;

2. This structure does not consider the consistency of the parasitic inductance distribution of each branch.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a double-sided water-cooled SiC half-bridge model package structure integrated with a laminated busbar. In view of the large parasitic inductance of the current packaging technology, a 3D packaging structure without wire bonding and a method of using a laminated busbar are proposed to obtain a small parasitic inductance, and the packaging structure is symmetrical, which can make multiple SiC semiconductor chips. The inductance distribution of each branch of the parallel structure is consistent, so as to obtain a good current sharing effect; the use of a double-sided water-cooled radiator can obtain an excellent heat dissipation effect and improve the reliability of the module.

In order to achieve the above object, the present invention provides a double-sided water-cooled SiC half-bridge module package structure with integrated laminated busbar, including a main structure, an external connection structure and a heat dissipation device, and the main structure includes an upper DBC, a lower DBC, Six SiC semiconductor chips and six spacers, the external connection structure includes a laminated busbar and an AC busbar, the laminated busbar includes a positive busbar and a negative busbar, and the heat dissipation device includes two water cooling heat sink;

The structure of the upper DBC and the lower DBC are exactly the same, including a DBC substrate, two driving pins and three copper foils; the cross-section of the DBC substrate is circular, and from bottom to top are the lower copper layer of the substrate, the substrate The ceramic layer and the copper layer on the substrate, the copper layer on the substrate is a patterned copper layer, including six partial sector coppers, one gate trunk copper and three gate branch coppers; the six partial sector coppers are kept concentric with the substrate ceramic layer It is evenly distributed. A gate trunk copper extends from the center of the substrate ceramic layer to the edge of the substrate ceramic layer. The tail of the gate trunk copper is provided with a gate signal inflow terminal. Three gate branch coppers are connected to the substrate ceramic layer. The center of the gate is the starting point, and it extends in a uniform distribution to the center of the short arc sides of the three partial sector coppers. The tail of each gate branch copper is provided with a gate connection terminal. The gate connection terminal and the corresponding part of the sector copper are connected. There is a gap between them; one of the driving pins is welded on the gate electrode trunk copper, the other is soldered on the copper layer under the substrate, and the two driving pins are aligned in radial positions; the copper foil One end is fixed on the copper layer under the substrate, and the other end is fixed on the part of the fan-shaped copper corresponding to the gate branch copper, and the positions of the three copper foils are evenly distributed;

The six spacers and the six SiC semiconductor chips are divided into two groups, the gate electrodes of the three SiC semiconductor chips in the first group are respectively welded with the three gate electrode connection terminals on the upper DBC, and the source electrodes are respectively connected to the upper The three partial fan-shaped coppers corresponding to the upper gate branch copper of the DBC are welded together, and the drains are respectively welded to one side of the first group of three pads; the gates of the second group of three SiC semiconductor chips are respectively connected to the lower DBC The upper three gate connection terminals are welded together, the source is welded together with the three partial fan-shaped copper corresponding to the upper gate branch copper of the lower DBC, and the drain is welded with one side of the second set of three pads respectively. Together;

The positive and negative bus bars have the same structure and are both a rectangular copper plate. A circular hole is left in the middle of the rectangular copper plate. The size of the circular hole is adapted to the DBC substrate, which ensures that the DBC substrate can be embedded in the circular hole. At both ends of the rectangular copper plate, there is a reserved socket for DC terminals and a row of reserved sockets for connecting terminals of decoupling capacitors; the three pins are evenly distributed on the side of the round hole of the positive busbar, and the three pins rotate After 60 degrees, it is evenly distributed and installed on the edge of the circular hole of the negative busbar. A layer of insulating paper is placed on the contact surface of the positive busbar and the negative busbar, and the negative busbar is on the top and the positive busbar is pressed down Together to form a laminated busbar;

The shape of the AC busbar is an inverted U shape, including a rectangular main board and two rectangular side boards, the main board and the side boards are copper plates, and the same circular hole as the laminated busbar is left in the middle position of the rectangular main board. There is a reserved socket for AC terminal on each of the two rectangular side plates, and the six pins are evenly distributed and installed on the edge of the circular hole of the AC busbar;

The upper DBC is embedded in the circular hole of the AC busbar, part of the fan-shaped copper of the upper DBC is connected to the pins of the AC busbar, the lower DBC is embedded in the circular hole of the laminated busbar, and part of the fan-shaped copper of the lower DBC is connected to the pin of the AC busbar. The pins of the laminated busbar are connected;

Then, after aligning the two gate trunk coppers of the upper and lower DBCs in the radial direction, align the other side of the first set of three pads with the three parts on the lower DBC that do not have corresponding gate branch coppers The fan-shaped copper is welded together, and the other side of the second group of three spacers is welded together with the three partial fan-shaped coppers on the upper DBC that do not correspond to the gate branch copper, completing the package structure except the heat sink. assembly;

The heat dissipation device includes two water-cooled radiators with the same structure, and the front of each water-cooled radiator has a water inlet and three water outlets, the position of the water inlet is the center of the water-cooled radiator, and the positions of the three water outlets are Corresponding to the position of the SiC semiconductor chip in the main structure, the opposite sides of the two water-cooled heat sinks are respectively bonded to the lower copper layers of the upper and lower DBC substrates through thermal grease.

Preferably, the patterned copper layer refers to that a copper layer is formed on the ceramic layer of the substrate by a bonding method, and then different patterned layouts are formed by an etching method.

Preferably, the source electrode and the gate electrode of the SiC semiconductor chip are on the same side of the SiC semiconductor chip, and the drain electrode is on the other side of the SiC semiconductor chip.

Preferably, the material of the gasket is metal molybdenum with a thermal matching coefficient similar to that of the SiC semiconductor chip.

Preferably, the six pins of the laminated busbar are radially aligned with the six pins of the AC busbar.

Preferably, the cavities of the two water-cooled radiators are provided with evenly distributed spoiler columns.

As can be seen from the above technical solutions, compared with the prior art, the present invention has the following advantages:

1. Integrating the laminated busbar into the package structure not only solves the problem of large inductance of the power terminals, but also the symmetrical design of the laminated busbar and the AC busbar can ensure that the pins to the DC terminal are reserved for sockets or AC terminals as much as possible The distance between the reserved sockets is not much different, so that the parasitic parameters of each branch are as consistent as possible.

2. The upper DBC and the lower DBC are designed in a circular structure and symmetrical layout, so that the parasitic inductance distribution of the upper DBC and the lower DBC tends to be consistent; the main structure composed of the upper DBC, the lower DBC, the gasket, and the SiC semiconductor chip is 3D The structure enables the current to flow in the vertical direction. Since the vertical height is extremely small, about 3mm, the area of the commutation loop is greatly reduced, so the parasitic inductance can be effectively reduced.

3. The two water-cooling radiators are respectively bonded to the copper layer under the substrate of the upper DBC and the lower DBC to realize double-sided water cooling, and the three water outlets correspond to the positions of the SiC semiconductor chips, so that the water flow can be balanced for each A SiC semiconductor chip is water-cooled to achieve the purpose of balanced heat dissipation.

Description of drawings

Fig. 1 is the circuit diagram of the packaging structure of the present invention;

Figure 2 is an expanded view of the main structure;

3 is a schematic diagram of the structure of a DBC substrate;

4 is a schematic diagram of a patterned copper layer structure of a DBC substrate;

FIG. 5 is an enlarged view of the gate connection terminal of the chip at A in FIG. 4;

6 is a distribution diagram of SiC semiconductor chips welded to the DBC substrate of the upper DBC or the lower DBC;

7 is a schematic diagram of the front structure of the upper DBC after installing the gasket;

Figure 8 is a schematic diagram of a laminated busbar structure;

FIG. 9 is a cross-sectional view of a reserved socket for a connection terminal of a decoupling capacitor;

Figure 10 is an expanded view of a laminated busbar;

Figure 11 is a sectional view of the connection between the laminated busbar and the lower DBC;

Figure 12 is a schematic diagram of the structure of the AC busbar;

Figure 13 is a schematic diagram of the connection between the AC busbar and the upper DBC;

14 is a sectional view of the connection between the upper DBC and the lower DBC;

15 is a schematic diagram of the front structure after the upper DBC is connected with the lower DBC;

16 is a schematic diagram of the front structure of the integrated heat sink;

Figure 17 is a schematic diagram of the front structure of a water-cooled radiator;

Figure 18 is a schematic diagram of the internal structure of the water-cooled radiator;

FIG. 19 is an enlarged view of the front structure of the SiC semiconductor chip.

Figure 20 is a schematic diagram of the corresponding assembly positions of the upper DBC and the lower DBC

Among them, 1 upper DBC, 2 lower DBC, 3 copper foil, 4 driving pins, 5SiC semiconductor chip, 6 spacers, 7 copper layers on the substrate, 8 ceramic layers on the substrate, 9 copper layers on the lower substrate, 10 parts of fan-shaped copper, 11 gate trunk copper, 12 gate signal inflow terminals, 13 gate connection terminals, 14 positive busbars, 15 negative busbars, 16 laminated busbars, 17 reserved sockets for DC terminals, 18 pins, 19 decoupling capacitors Connection terminal reserved socket, 20 AC busbar, 21 AC terminal reserved socket, 22 water cooling radiator, 23 source pole, 24 water inlet, 25 water outlet, 26 spoiler column, 27 gate pole branch copper, 28 gate pole.

Detailed ways

The present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a circuit diagram of the packaging structure of the present invention. In the figure, P is the DC positive pole, N is the DC negative pole, AC is the AC terminal, T1-T6 are six SiC semiconductor chips 5, of which T1, T2 and T3 are the SiC semiconductor chips 5 connected in parallel with the upper bridge arm, T4, T5 and T6 is the SiC semiconductor chip 5 connected in parallel with the lower bridge arm, and the parallel connected SiC semiconductor chip 5 increases the total current, so that the power that can be integrated in the package structure is larger.

The double-sided water-cooled SiC half-bridge module package structure with integrated laminated busbar of the present invention includes a main structure, an external connection structure and a heat dissipation device, and the main structure includes an upper DBC1, a lower DBC2, six SiC semiconductor chips 5 and six spacers 6, the external connection structure includes a laminated busbar 16 and an AC busbar 20, the laminated busbar 16 includes a positive busbar 14 and a negative busbar 15, and the heat dissipation device includes two water cooling radiator 22 .

2 is an expanded view of the main structure, FIG. 3 is a schematic structural diagram of a DBC substrate, FIG. 4 is a schematic structural diagram of a patterned copper layer of the DBC substrate, and FIG. 5 is an enlarged view of the gate connection terminal of the chip at A in FIG. 4 . It can be seen from FIG. 2 to FIG. 5 that the upper DBC1 and the lower DBC2 have the same structure, and both include a DBC substrate, two driving pins 4 and three copper foils 3 .

The cross-section of the DBC substrate is circular, and from bottom to top are the lower copper layer 9 of the substrate, the ceramic layer 8 of the substrate and the copper layer 7 on the substrate. The copper layer 7 on the substrate is a patterned copper layer. The copper layer refers to that a copper layer is formed on the substrate ceramic layer 8 by a bonding method, and then different patterned layouts are formed by an etching method. Specifically, the copper layer 7 on the substrate in the present invention includes six pieces of partial sector copper 10 , one gate trunk copper 11 and three gate branch coppers 27 . The six partial fan-shaped coppers 10 are kept concentric with the substrate ceramic layer 8 and are evenly distributed. A gate electrode trunk copper 11 extends from the center of the substrate ceramic layer 8 to the edge of the substrate ceramic layer 8. The gate signal inflow terminal 12 is provided, and the three gate branch copper 27 starts from the center of the ceramic layer of the substrate and extends to the center of the short arc side of the three partial fan-shaped copper 10 in a uniform distribution shape. Each gate branch copper 27 There is a gate connection terminal 13 at the tail of the gate, and a gap is left between the gate connection terminal 13 and the corresponding part of the sector-shaped copper 10; one of the driving pins 4 is welded on the gate trunk copper 11, and the other The root is welded on the copper layer 9 under the substrate, and the two driving pins 4 are aligned in radial positions; one end of the copper foil 3 is fixed on the copper layer 9 under the substrate, and the other end is fixed on the gate branch copper. On the part of the copper sector 10 corresponding to 27, the positions of the three copper foils 3 are evenly distributed.

The six spacers 6 and the six SiC semiconductor chips 5 are divided into two groups, and the gate electrodes 28 of the three SiC semiconductor chips 5 in the first group are welded together with the three gate electrode connection terminals 13 on the upper DBC1, respectively. The source electrode 23 is respectively welded with the three partial sector copper 10 corresponding to the gate electrode branch copper 27 on the upper DBC1, and the drain electrode is welded together with one side of the first group of three pads 6 respectively; the second group of three SiC The gate electrode 28 of the semiconductor chip 5 is respectively welded with the three gate electrode connection terminals 13 on the lower DBC2, the source electrode 23 is respectively welded with the three partial sector-shaped copper 10 corresponding to the upper gate electrode branch copper 27 of the lower DBC2, and the drain electrode is welded together. The poles are respectively welded with one side of the second group of three pads 6; Figure 6 shows the distribution of the SiC semiconductor chips 5 welded to the DBC substrate of the upper DBC1 or the lower DBC2, and Figure 7 shows the mounting pads Schematic diagram of the front structure of the upper DBC1 after the sheet 6.

In this embodiment, the source electrode 23 and the gate electrode 28 of the SiC semiconductor chip 5 are on the same side of the SiC semiconductor chip, and the drain electrode is on the other side of the SiC semiconductor chip. Figure 19 shows an enlarged view of the front side structure of the SiC semiconductor chip.

In this embodiment, the material of the spacer 6 is metal molybdenum having a thermal matching coefficient similar to that of the SiC semiconductor chip 5 .

It can be seen from the above structure that in this embodiment, the angle between the six partial sector-shaped coppers 10 is 60°, and one gate trunk copper 11 and three gate branch coppers 27 form a gate line with one entry and three points, The angle between the three branches is 120°. The other side of the upper DBC1 and the lower DBC2, that is, the lower layer copper 9 of the base layer has a complete circular copper, and this symmetrical design makes the parasitic inductance distribution of the upper DBC1 and the lower DBC2 tend to be consistent. The material of the spacer 6 is metal molybdenum having a thermal matching coefficient similar to that of the SiC semiconductor chip 5 , which reduces the thermal stress between the SiC semiconductor chip 5 and the spacer 6 . In the package structure, one end of the copper foil 3 is connected to the partial sector copper 10 with the SiC semiconductor chip 5, and the other end is connected to the lower copper layer 9 of the substrate of the upper DBC1 or the lower DBC2, that is, the copper foil 3 is used to form the connection between the source electrode 23 and the gate electrode. The auxiliary loop of 28 reduces the influence of common source parasitic inductance.

Fig. 8 is a schematic diagram of the structure of the laminated busbar, Fig. 9 is a cross-sectional view of the reserved socket for the connection terminal of the decoupling capacitor, Fig. 10 is an expanded view of the laminated busbar, Fig. 11 is a cross-sectional view of the connection between the laminated busbar and the lower DBC, Fig. 12 Figure 13 is a schematic diagram of the connection between the AC busbar and the upper DBC, Figure 14 is a cross-sectional view of the connection between the upper DBC and the lower DBC, and Figure 15 is a schematic diagram of the front structure after the upper DBC and the lower DBC are connected.

As can be seen from FIGS. 8-15 , the external connection structure includes a laminated busbar 16 and an AC busbar 20 , and the laminated busbar 16 includes a positive busbar 14 and a negative electrode busbar 15 .

The positive busbar 14 and the negative busbar 15 have the same structure and are both a rectangular copper plate. A circular hole is left in the middle of the rectangular copper plate. The size of the circular hole is adapted to the DBC substrate, which ensures that the DBC substrate can be embedded in the circular hole. , there is a reserved socket 17 for DC terminals and a row of reserved sockets 19 for decoupling capacitor connection terminals at both ends of the rectangular copper plate; After the three pins 18 are rotated 60 degrees, they are evenly distributed and installed on the edge of the circular hole of the negative busbar 15. A layer of insulating paper is placed on the contact surface of the positive busbar 14 and the negative busbar 15, and the negative busbar 15 on the top and the positive busbar 14 on the bottom are pressed together to form a laminated busbar 16 .

The shape of the AC bus bar 20 is an inverted U shape, including a rectangular main board and two rectangular side boards, the main board and the side boards are copper plates, and the same circular hole as the laminated bus bar 16 is left in the middle position of the rectangular main board. There is a reserved socket 21 for AC terminals on each of the two rectangular side plates, and the six pins 18 are evenly distributed and installed on the sides of the circular holes of the AC busbar 20 .

The upper DBC1 is embedded in the round hole of the AC busbar 20, part of the fan-shaped copper 10 of the upper DBC1 is connected to the pin 18 of the AC busbar 20, the lower DBC2 is embedded in the round hole of the laminated busbar 16, and the lower DBC2 Part of the fan-shaped copper 10 is connected to the pin 18 of the laminated bus bar 16.

Then, after aligning the two gate trunk coppers 11 of the upper DBC1 and the lower DBC2 in the radial direction, align the other side of the first group of three pads 6 with the gate branch copper 27 on the lower DBC2 that does not correspond to The three partial fan-shaped coppers 10 are welded together, and the other side of the second group of three spacers 6 is welded with the three partial fan-shaped coppers 10 that do not correspond to the gate branch copper 27 on the upper DBC1, and the heat dissipation is completed. Assembly of packaging structures outside of the device. Figure 20 shows a schematic diagram of the corresponding assembly positions of the upper DBC1 and the lower DBC2.

In this embodiment, the six pins of the laminated busbar are aligned in radial positions with the six pins of the AC busbar.

It can be seen from the above structure that the six pins 18 of the laminated bus bar 16 and the six pins 18 of the AC bus bar 20 are laminated after being integrated into the package structure. And the final completed main structure is a 3D structure, so that the current can flow in the vertical direction. Since the vertical height is extremely small, about 3mm, the area of the commutation loop is greatly reduced, so the parasitic inductance can be effectively reduced. The structure of the laminated busbar 16 greatly reduces the parasitic inductance of the power terminals by using the mutual inductance cancellation effect. Moreover, the two DC terminals of the positive busbar 14 and the negative busbar 15 reserve the socket 17 and the two AC terminals of the AC busbar 20 The design of the reserved socket 21 can ensure that the distance between the pin 18 and the DC terminal or the AC terminal is not much different, so that the parasitic parameters of each branch are as consistent as possible.

The heat dissipation device includes two water-cooled radiators 22 with the same structure, and the front of each water-cooled radiator 22 has a water inlet 24 and three water outlets 25, and the position of the water inlet 24 is the center of the water-cooled radiator 22, and The positions of the three water outlets 25 correspond to the positions of the SiC semiconductor chips 5 in the main structure. The opposite sides of the two water-cooled radiators 22 are respectively bonded to the lower copper layers 9 of the upper DBC1 and lower DBC2 substrates through thermal grease. FIG. 16 is a schematic view of the front structure of the integrated heat sink, and FIG. 17 is a schematic view of the front structure of the water-cooled radiator.

In this embodiment, the cavities of the two water-cooled radiators 22 are provided with evenly distributed spoiler columns 26 . Figure 18 shows the internal structure of the water-cooled radiator.

It can be seen from the above structure that the water inlet 24 is located at the center of the water-cooled radiator 22, and the three water outlets 25 are located close to the SiC semiconductor chip 5, so that the water flow can flow through each SiC semiconductor chip 5 in a balanced manner to achieve the purpose of balanced heat dissipation .

After the water-cooled heat sink 22 is integrated into the package structure, as shown in FIG. 17 , in this embodiment, the two water-cooled heat sinks 22 are cylindrical in shape, and the diameter of the cross section is slightly smaller than the diameter of the substrate ceramic layer 8 . The circular structure maximizes the area covered on the upper DBC1 or the lower DBC2, so that the heat generated by the SiC semiconductor chip 5 can be transferred to the two water cooling radiators 22 through the upper DBC1 or the lower DBC2 to the greatest extent.

Claims (6)

1. The double-sided water-cooled SiC half-bridge module packaging structure is characterized by comprising a main body structure, an external connection structure and a heat dissipation device, wherein the main body structure comprises an upper DBC, a lower DBC, six SiC semiconductor chips and six gaskets;

the upper DBC and the lower DBC have the same structure and respectively comprise a DBC substrate, two driving guide pins and three copper foils; the cross section of the DBC substrate is circular, and the DBC substrate sequentially comprises a substrate lower copper layer, a substrate ceramic layer and a substrate upper copper layer from bottom to top, wherein the substrate upper copper layer is a graphical copper layer and comprises six partial sector copper, one gate main copper and three gate branch copper; the six partial fan-shaped copper blocks and the substrate ceramic layer are concentric and uniformly distributed, one gate main copper block extends to the edge of the substrate ceramic layer by taking the center of the substrate ceramic layer as a starting point, the tail part of the gate main copper block is provided with a gate signal inflow terminal, three gate branch copper blocks extend to the center direction of short arc sides of three partial fan-shaped copper blocks in a uniformly distributed manner by taking the center of the substrate ceramic layer as a starting point, the tail part of each gate branch copper block is provided with a gate connecting terminal, and a gap is reserved between each gate connecting terminal and the corresponding partial fan-shaped copper block; one of the driving guide pins is welded on the gate stem main copper, the other one of the driving guide pins is welded on the lower copper layer of the substrate, and the two driving guide pins are aligned in the radial position; one end of the copper foil is fixedly connected to the lower copper layer of the substrate, the other end of the copper foil is fixedly connected to part of the fan-shaped copper corresponding to the gate branch copper, and the positions of the three copper foils are uniformly distributed;

the six gaskets and the six SiC semiconductor chips are divided into two groups, the gate electrodes of the first group of three SiC semiconductor chips are respectively welded with three gate electrode connecting terminals on the upper DBC, the source electrodes are respectively welded with three partial fan-shaped copper corresponding to the gate electrode branch copper on the upper DBC, and the drain electrodes are respectively welded with one side of the first group of three gaskets; the gate electrodes of the second group of three SiC semiconductor chips are respectively welded with three gate electrode connecting terminals on the lower DBC, the source electrodes are respectively welded with three partial fan-shaped copper corresponding to the upper gate electrode branch copper of the lower DBC, and the drain electrodes are respectively welded with one side of the second group of three gaskets;

the positive busbar and the negative busbar are of the same structure and are both rectangular copper plates, round holes are reserved in the middle positions of the rectangular copper plates, the size of each round hole is matched with that of the DBC substrate, namely, the DBC substrate can be ensured to be embedded in the round holes, and two ends of each rectangular copper plate are respectively provided with a reserved direct-current terminal socket and a row of reserved decoupling capacitor connecting terminals socket; the three pins are uniformly distributed and installed at the hole edge of the round hole of the positive busbar, the three pins are uniformly distributed and installed at the hole edge of the round hole of the negative busbar after rotating for 60 degrees, a layer of insulating paper is padded on the contact surface of the positive busbar and the negative busbar, and the negative busbar and the positive busbar are pressed together to form a laminated busbar;

the alternating-current busbar is in an inverted-U shape and comprises a rectangular main board and two rectangular side boards, the main board and the side boards are copper boards, a round hole which is the same as the laminated busbar is reserved in the middle of the rectangular main board, an alternating-current terminal reserved socket is arranged on each of the two rectangular side boards, and six pins are uniformly distributed and installed on the hole edge of the round hole of the alternating-current busbar;

the upper DBC is embedded in a round hole of the alternating-current busbar, part of fan-shaped copper of the upper DBC is connected with pins of the alternating-current busbar, the lower DBC is embedded in a round hole of the laminated busbar, and part of fan-shaped copper of the lower DBC is connected with pins of the laminated busbar;

then, after two gate main copper of the upper DBC and the lower DBC are aligned in the radial direction, the other side of the first group of three gaskets is welded with three partial fan-shaped copper parts, which are not corresponding to the gate branch copper, on the lower DBC, and the other side of the second group of three gaskets is welded with three partial fan-shaped copper parts, which are not corresponding to the gate branch copper, on the upper DBC, so that the assembly of the packaging structure except the heat dissipation device is completed;

the heat dissipation device comprises two water-cooled radiators with the same structure, a water inlet and three water outlets are reserved on the front surface of each water-cooled radiator, the position of the water inlet is the center of the water-cooled radiator, the positions of the three water outlets correspond to the positions of SiC semiconductor chips in the main body structure, and the back surfaces of the two water-cooled radiators are respectively bonded with the lower copper layers of the substrates of the upper DBC and the lower DBC through heat conduction grease.

2. The double-sided water-cooled SiC half-bridge module packaging structure integrated with the laminated busbar according to claim 1, wherein the patterned copper layer is formed by forming a copper layer on a substrate ceramic layer by a coating method and then forming different patterned layouts by an etching method.

3. The double-sided water-cooled SiC half-bridge module package structure of claim 1, wherein the source and gate of the SiC semiconductor chip are on the same side of the SiC semiconductor chip, and the drain is on the other side of the SiC semiconductor chip.

4. The double-sided water-cooled SiC half-bridge module package structure of claim 1, wherein the spacer is made of molybdenum with heat matching coefficient similar to that of the SiC semiconductor chip.

5. The double-sided water-cooled SiC half-bridge module package structure of claim 1, wherein six pins of the laminated busbar are aligned with six pins of the AC busbar in radial positions.

6. The double-sided water-cooled SiC half-bridge module packaging structure of the integrated laminated busbar according to claim 1, wherein uniformly distributed turbulence columns are arranged in the cavities of the two water-cooled radiators.

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