CN107464785A - A kind of staggered two-side radiation power model of multiple branch circuit - Google Patents
A kind of staggered two-side radiation power model of multiple branch circuit Download PDFInfo
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- CN107464785A CN107464785A CN201710764612.1A CN201710764612A CN107464785A CN 107464785 A CN107464785 A CN 107464785A CN 201710764612 A CN201710764612 A CN 201710764612A CN 107464785 A CN107464785 A CN 107464785A
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- 230000005855 radiation Effects 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 115
- 239000002184 metal Substances 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000012212 insulator Substances 0.000 claims abstract description 34
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 238000003475 lamination Methods 0.000 claims abstract description 11
- 238000005070 sampling Methods 0.000 claims description 6
- 229910052723 transition metal Inorganic materials 0.000 claims description 6
- 150000003624 transition metals Chemical class 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
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Abstract
The invention discloses a kind of staggered two-side radiation power model of multiple branch circuit, two metal-insulator substrate joinings are set, multiple upper half-bridge switch chips and lower half-bridge switch chip arrangement interlaced with each other, each lower half-bridge switch chip is sintered on an independent lower half-bridge metal level, all upper half-bridge switch chips are sintered on a upper half-bridge metal level jointly, and upper half-bridge metal level is connected with positive pole power terminal.The present invention is by the way that two metal-insulator laminations are set, and make multiple upper half-bridge switch chips and lower half-bridge switch chip arrangement interlaced with each other, metal level, metal derby sintering process design inside collocation power model, module commutation circuit is divided into multiple loops parallel connections by a loop, greatly reduces the stray inductance of module；And positive pole, negative pole power terminal lamination set and are easily connected with outside busbar, increase metal level area as far as possible, effectively reduce the lead resistance of module, have reached the purpose that stray inductance is greatly reduced.
Description
Technical field
The present invention relates to power semiconductor modular, the staggered two-side radiation power model of especially a kind of multiple branch circuit.
Background technology
The threat of global energy crisis and climate warming allows people increasingly to pay attention to saving while economic development is pursued
Emission reduction, low carbon development.With green establishment and propulsion in the world, the development of power semiconductor, application prospect are more
It is wide.Existing electric and electronic power module encapsulation volume is big, weight weight, does not meet electric power electronic module high power density, light weight
The requirement of change, and the stray inductance of existing power model is often also bigger, causes higher overshoot voltage, not only increases
Loss, and chip over-voltage breakdown is easily caused, it also limit the application in high switching frequency occasion.In addition, with application end
The continuous upgrading of power density, the encapsulating structure of existing power model have hindered the further lifting of power density, it is necessary to
The needs of power density is growing could be met by developing significantly more efficient radiator structure.
Everybody gradually appreciated the limitation that power model stray inductance is applied to high frequency in recent years, one after another to how to drop
The stray inductance expansion research of low power module, but the emphasis focused on is generally placed on inside power model, and to exposing in power
The power terminal shape of module-external and position research are few.The positive and negative electrode power terminal of existing two-side radiation power model is past
Toward using deriving structure side by side, the commutation circuit of this structure is larger, and stray inductance is difficult further to reduce；And by largely imitating
Very, test, the combining form for demonstrating positive and negative electrode power terminal has a great influence to the stray inductance of power model.
The content of the invention
Goal of the invention：In view of the above-mentioned drawbacks of the prior art, the present invention is intended to provide a kind of small volume, it is in light weight,
The small two-side radiation power model of stray inductance.
Technical scheme：A kind of staggered two-side radiation power model of multiple branch circuit, including positive pole power terminal, negative pole work(
Rate terminal and power output terminal, the positive pole power terminal and negative pole power terminal one metal-insulator substrate of each connection, two
Individual metal-insulator substrate joining is set, and the metal-insulator substrate being connected with positive pole power terminal is provided with chip, and chip passes through burning
The metal derby of knot is connected with the metal-insulator substrate on its opposite, the metal-insulator substrate being connected with negative pole power terminal also with output
Power terminal is connected, and the chip includes multiple upper half-bridge switch chips and lower half-bridge switch chip；Multiple upper half-bridge switch cores
Piece and lower half-bridge switch chip arrangement interlaced with each other, each lower half-bridge switch chip are sintered in an independent lower half-bridge metal
On layer, all upper half-bridge switch chips are sintered on a upper half-bridge metal level jointly, upper half-bridge metal level and positive pole power
Terminal is connected.
Further, the upper half-bridge metal level is tooth-shape structure, and one is gone up half-bridge switch chip distribution in a tooth,
Lower half-bridge metal level is arranged on the sidepiece of tooth.
Further, the positive pole power terminal is set with negative pole power terminal lamination.
Further, the connecting hole of the positive pole power terminal and negative pole power terminal is coaxial aperture.
Further, upper half-bridge emitter stage/source is additionally provided with the metal-insulator substrate being connected with positive pole power terminal
Pole metal level, lower half-bridge emitter stage/source metal, the upper half-bridge gate pole metal being connected with the gate pole of upper half-bridge switch chip
Layer and the lower half-bridge gate pole metal level being connected with the gate pole of lower half-bridge switch chip；Upper half-bridge gate pole metal level is also associated with
Upper half-bridge drive terminal, lower half-bridge gate pole metal level are also associated with lower half-bridge drive terminal, upper half-bridge emitter stage/source metal
And lower half-bridge emitter stage/source metal is connected by the metal derby of sintering with the metal-insulator substrate on its respective opposite.
Further, transition gold in lower half-bridge gate pole is additionally provided with the metal-insulator substrate being connected with positive pole power terminal
Belong to layer, the gate pole of the lower half-bridge switch chip in part is connected to lower half-bridge gate pole transition metal layer, lower half-bridge gate pole by bonding line
Transition metal layer is connected to lower half-bridge gate pole metal level by bonding line again；The gate pole of the upper half-bridge switch chip and upper half-bridge
Gate metal layer is connected also by bonding line.
Further, the first output metal level is additionally provided with the metal-insulator substrate being connected with positive pole power terminal,
First output metal level is connected by the metal derby of sintering with the metal level that the power output terminal on its opposite is sintered, and first is defeated
Go out and sampling terminal is also associated with metal level；Sampling terminal is also connected with the upper half-bridge metal level.
Further, the metal-insulator substrate being connected with negative pole power terminal is provided with sinters with power output terminal
The second output metal level and negative terminal metal level with negative pole power terminal sintering, the second output metal level with it is negative
Pole terminal metal layer is staggered in tooth form.
Further, in addition to upper half-bridge diode chip for backlight unit and lower half-bridge diode chip for backlight unit, the upper half-bridge diode core
Piece is arranged in pairs with upper half-bridge switch chip, and lower half-bridge diode chip for backlight unit is arranged in pairs with lower half-bridge switch chip, is arranged in pairs
The metal level that is sintered of two chips it is identical.
Further, it is equipped with heat abstractor on the outside of described two metal-insulator substrates.
Beneficial effect：The present invention by the way that two metal-insulator laminations are set, and make multiple upper half-bridge switch chips with
Lower half-bridge switch chip arrangement interlaced with each other, arrange in pairs or groups power model inside metal level, metal derby sintering process design, the module change of current
Loop becomes multiple loops parallel connections by a loop, greatly reduces the stray inductance of module；And positive pole, negative pole power terminal
Lamination sets and is easily connected with outside busbar；Metal level area is increased as far as possible, effectively reduces the lead resistance of module, simultaneously
Having reached reduces the purpose of stray inductance.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the internal structure schematic diagram of the present invention；
Fig. 3, Fig. 4 are the bottom metal insulated substrate schematic diagrames of embodiment 1；
Fig. 5 is the top metal insulated substrate schematic diagram of embodiment 1；
Fig. 6 is the top view of embodiment 1；
Fig. 7 is Fig. 6 BB sections current diagram；
Fig. 8 is the bottom metal insulated substrate schematic diagram of embodiment 2；
Fig. 9 is the top metal insulated substrate schematic diagram of embodiment 2.
Embodiment
The technical program is described in detail below by embodiment combination accompanying drawing.
Embodiment 1：
As shown in figure 1, the two-side radiation power model that a kind of multiple branch circuit is staggered, including it is positive pole power terminal 1, negative
Pole power terminal 2 and power output terminal 3, respectively one metal of connection is exhausted for the positive pole power terminal 1 and negative pole power terminal 2
Edge substrate 4, two laminations of metal-insulator substrate 4 are set, and the metal-insulator substrate 4 being connected with positive pole power terminal 1 is provided with core
Piece, chip are connected by the metal derby 5 of sintering with the metal-insulator substrate 4 on its opposite, and chip includes multiple upper half-bridge switch cores
Piece 6 and lower half-bridge switch chip 7.
Positive pole power terminal 1 is set with the lamination of negative pole power terminal 2, the company of positive pole power terminal 1 and negative pole power terminal 2
It is coaxial aperture to connect hole.By the way that positive and negative power terminal lamination is set, reduce the commutation circuit of power model as far as possible so that parasitic
Inductance is effectively reduced.The settable heat abstractor in the outside of two metal-insulator substrates 4 in the present embodiment, two-side radiation
Mode can improve radiating efficiency.
As shown in Fig. 2 to be located at the same side of module, length with negative pole power terminal 2 consistent for positive pole power terminal 1, and two
Person's lamination is set, and plastic shell surrounds part positive pole, negative pole power terminal 2, positive pole power terminal 1, negative pole power terminal 2
Connecting hole is coaxial aperture, and connecting hole size is consistent, and connecting hole is internally provided with capsulation material, and has on plastic shell
The coaxial mounting hole with connecting hole.The size of specific two connecting holes also can be inconsistent during implementation, the shape size of two electrodes
Can also be inconsistent, convenient installation.Upper surface portion metal level, the metal of bottom of the metal-insulator substrate 4 at top are exhausted
The bottom surface section metal level of edge substrate 4 is exposed independent from outside plastic shell, and exceeds plastic shell.
As shown in Figure 3, Figure 4, multiple upper half-bridge switch chips 6 and lower 7 arrangement interlaced with each other of half-bridge switch chip, under each
Half-bridge switch chip 7 is sintered on an independent lower half-bridge metal level 8, and all upper half-bridge switch chips 6 sinter jointly
On one on half-bridge metal level 9, upper half-bridge metal level 9 is connected with positive pole power terminal 1, i.e., positive pole power terminal 1 is sintered in
On upper half-bridge metal level 9, other two power terminals are also connected by the way of sintering with metal level.Upper half-bridge metal level 9 is
Tooth-shape structure, a upper half-bridge switch chip 6 are distributed in a tooth, and lower half-bridge metal level 8 is arranged on the sidepiece of tooth.Power
Module also includes upper half-bridge diode chip for backlight unit 13 and lower half-bridge diode chip for backlight unit 14, the upper half-bridge diode chip for backlight unit 13 and upper half
Bridge switch chip 6 is arranged in pairs, and lower half-bridge diode chip for backlight unit 14 is arranged in pairs with lower half-bridge switch chip 7, two be arranged in pairs
The metal level that individual chip is sintered is identical, and the circuit connecting relation of diode chip for backlight unit and switch chip is the known normal of this area
Know.
The metal-insulator substrate 4 being connected with positive pole power terminal 1, i.e., be additionally provided with half-bridge on bottom metal insulated substrate 4
Emitter stage/source metal 411, lower half-bridge emitter stage/source metal 412, it is connected with the gate pole of upper half-bridge switch chip 6
Upper half-bridge gate pole metal level 413, the lower half-bridge gate pole metal level 414 being connected with the gate pole of lower half-bridge switch chip 7, lower half-bridge gate
Pole transition metal layer 415 and first exports metal level 416；Upper half-bridge gate pole metal level 413 is also associated with half-bridge drive end
Son, lower half-bridge gate pole metal level 414 are also associated with lower half-bridge drive terminal, upper half-bridge emitter stage/source metal 411 and under
Half-bridge emitter stage/source metal 412 is connected by the metal derby 5 of sintering with the metal-insulator substrate 4 on its respective opposite.
The gate pole of the lower half-bridge switch chip 7 in part is connected to lower half-bridge gate pole transition metal layer 415, lower half-bridge gate pole mistake by bonding line
Cross metal level 415 and lower half-bridge gate pole metal level 414 is connected to by bonding line again；The gate pole of the upper half-bridge switch chip 6 with
Upper half-bridge gate pole metal level 413 is connected also by bonding line.First output metal level 416 is right with it by the metal derby 5 of sintering
The metal level that the power output terminal 3 in face is sintered is connected, and sampling terminal 12 is also associated with the first output metal level 416；Institute
State and sampling terminal 12 is also connected with half-bridge metal level 9.
As shown in figure 5, the metal-insulator substrate 4 being connected with negative pole power terminal 2, i.e. top metal insulated substrate 4 also with
Power output terminal 3 is connected, the metal level and the metal on its opposite on metal-insulator substrate 4 being connected with negative pole power terminal 2
Layer and chip array are adapted, main the second output metal level 421 for including sintering with power output terminal 3 and with negative pole work(
The negative terminal metal level 422 that rate terminal 2 sinters, the second output metal level 421 and negative terminal metal level 422 are in tooth form
It is staggered.The two metal levels pass through metal derby according to the conventional circuit logic in this area and the chip and metal level on its opposite
5 sintering, realize normal work and change of current function, the setting in reference picture, will not be described here.
As shown in Fig. 6, Fig. 7, Fig. 8, the electric current that positive pole power terminal 1 inputs passes through upper half-bridge switch chip 6, metal derby
5th, the second output metal level 421, is exported finally by power output terminal 3；During afterflow, electric current is by negative pole power terminal 2, negative pole
Terminal metal layer 422, metal derby 5, lower half-bridge diode chip for backlight unit 14, metal derby 5, second export metal level 421, finally by defeated
Go out power terminal 3 to export.
Embodiment 2：
As shown in figure 9, the present embodiment and the structure of embodiment 1 are essentially identical, difference is, upper half in the present embodiment
Bridge switch chip 6 has trickle adjustment with the sequencing that lower half-bridge switch chip 7 is arranged alternately, and dependency structure can refer to embodiment
1 by those skilled in the art according to conventional arrangement, will not be described here.
It the above is only the preferred embodiment of the present invention, it should be pointed out that：Come for those skilled in the art
Say, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of staggered two-side radiation power model of multiple branch circuit, including positive pole power terminal (1), negative pole power terminal
(2) and power output terminal (3), it is characterised in that the positive pole power terminal (1) and negative pole power terminal (2) respectively connect one
Individual metal-insulator substrate (4), two metal-insulator substrate (4) laminations are set, the metal-insulator being connected with positive pole power terminal (1)
Substrate (4) is provided with chip, and chip is connected by the metal derby (5) of sintering with the metal-insulator substrate (4) on its opposite, with negative pole
The connected metal-insulator substrate (4) of power terminal (2) is also connected with power output terminal (3), and the chip includes multiple upper half
Bridge switch chip (6) and lower half-bridge switch chip (7)；Multiple upper half-bridge switch chips (6) and lower half-bridge switch chip (7) are each other
Staggered, each lower half-bridge switch chip (7) is sintered on an independent lower half-bridge metal level (8), all upper half
Bridge switch chip (6) is sintered on a upper half-bridge metal level (9) jointly, upper half-bridge metal level (9) and positive pole power terminal (1)
It is connected.
2. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 1, it is characterised in that described
Upper half-bridge metal level (9) is tooth-shape structure, and a upper half-bridge switch chip (6) is distributed in a tooth.
3. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 1, it is characterised in that described
Positive pole power terminal (1) is set with negative pole power terminal (2) lamination.
4. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 3, it is characterised in that described
The connecting hole of positive pole power terminal (1) and negative pole power terminal (2) is coaxial aperture.
5. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 1, it is characterised in that described
Be additionally provided with the metal-insulator substrate (4) being connected with positive pole power terminal (1) upper half-bridge emitter stage/source metal (411), under
Half-bridge emitter stage/source metal (412), the upper half-bridge gate pole metal level being connected with the gate pole of upper half-bridge switch chip (6)
(413) the lower half-bridge gate pole metal level (414) and with the gate pole of lower half-bridge switch chip (7) being connected；Upper half-bridge gate pole metal
Layer (413) is also associated with half-bridge drive terminal (10), and lower half-bridge gate pole metal level (414) is also associated with lower half-bridge drive terminal
(11), upper half-bridge emitter stage/source metal (411) and lower half-bridge emitter stage/source metal (412) pass through sintering
Metal derby (5) is connected with the metal-insulator substrate (4) on its respective opposite.
6. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 5, it is characterised in that described
Lower half-bridge gate pole transition metal layer (415), part are additionally provided with the metal-insulator substrate (4) being connected with positive pole power terminal (1)
The gate pole of lower half-bridge switch chip (7) is connected to lower half-bridge gate pole transition metal layer (415), lower half-bridge gate pole mistake by bonding line
Cross metal level (415) and lower half-bridge gate pole metal level (414) is connected to by bonding line again；The upper half-bridge switch chip (6)
Gate pole is connected with upper half-bridge gate pole metal level (413) also by bonding line.
7. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 5, it is characterised in that described
The first output metal level (416), the first output gold are additionally provided with the metal-insulator substrate (4) being connected with positive pole power terminal (1)
Category layer (416) is connected by the metal derby (5) of sintering with the metal level that the power output terminal (3) on its opposite is sintered, and first
Sampling terminal (12) is also associated with output metal level (416)；Sampling terminal is also connected with the upper half-bridge metal level (9)
(12)。
8. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 1, it is characterised in that described
The metal-insulator substrate (4) being connected with negative pole power terminal (2) is provided with the second output gold with power output terminal (3) sintering
Belong to layer (421) and the negative terminal metal level (422) with negative pole power terminal (2) sintering, the second output metal level
(421) it is staggered in tooth form with negative terminal metal level (422).
9. the staggered two-side radiation power model of a kind of multiple branch circuit according to claim 1, it is characterised in that also wrap
Include half-bridge diode chip for backlight unit (13) and lower half-bridge diode chip for backlight unit (14), the upper half-bridge diode chip for backlight unit (13) and upper half-bridge
Switch chip (6) is arranged in pairs, and lower half-bridge diode chip for backlight unit (14) is arranged in pairs with lower half-bridge switch chip (7), is arranged in pairs
The metal level that is sintered of two chips it is identical.
A kind of 10. staggered two-side radiation power model of multiple branch circuit according to claim 1, it is characterised in that institute
State and be equipped with heat abstractor on the outside of two metal-insulator substrates (4).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710764612.1A CN107464785A (en) | 2017-08-30 | 2017-08-30 | A kind of staggered two-side radiation power model of multiple branch circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710764612.1A CN107464785A (en) | 2017-08-30 | 2017-08-30 | A kind of staggered two-side radiation power model of multiple branch circuit |
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| CN201710764612.1A Pending CN107464785A (en) | 2017-08-30 | 2017-08-30 | A kind of staggered two-side radiation power model of multiple branch circuit |
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Cited By (10)
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| CN109887899A (en) * | 2019-03-01 | 2019-06-14 | 深圳市慧成功率电子有限公司 | The power module and power modules of multiple-way supply placement-and-routing |
| JP2020013895A (en) * | 2018-07-18 | 2020-01-23 | 株式会社オートネットワーク技術研究所 | Circuit board |
| CN111146164A (en) * | 2019-12-25 | 2020-05-12 | 西安交通大学 | Packaging structure of wide-bandgap power module suitable for severe environment |
| CN111403357A (en) * | 2020-03-31 | 2020-07-10 | 深圳市依思普林科技有限公司 | Double-sided heat dissipation power module |
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| US11490516B2 (en) | 2018-07-18 | 2022-11-01 | Delta Electronics (Shanghai) Co., Ltd | Power module structure |
| CN111524877A (en) * | 2019-02-03 | 2020-08-11 | 株洲中车时代电气股份有限公司 | Double-sided heat dissipation power module |
| CN109887899A (en) * | 2019-03-01 | 2019-06-14 | 深圳市慧成功率电子有限公司 | The power module and power modules of multiple-way supply placement-and-routing |
| CN111146164A (en) * | 2019-12-25 | 2020-05-12 | 西安交通大学 | Packaging structure of wide-bandgap power module suitable for severe environment |
| CN111146164B (en) * | 2019-12-25 | 2022-02-22 | 西安交通大学 | Packaging structure of wide-bandgap power module suitable for severe environment |
| CN111403357A (en) * | 2020-03-31 | 2020-07-10 | 深圳市依思普林科技有限公司 | Double-sided heat dissipation power module |
| CN111554645B (en) * | 2020-04-07 | 2021-09-03 | 合肥工业大学 | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar |
| CN111554645A (en) * | 2020-04-07 | 2020-08-18 | 合肥工业大学 | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar |
| CN114093856A (en) * | 2020-08-25 | 2022-02-25 | 华中科技大学 | Multi-chip parallel half-bridge type MOSFET module |
| CN114093856B (en) * | 2020-08-25 | 2024-09-06 | 华中科技大学 | Multi-chip parallel half-bridge MOSFET module |
| CN113345871A (en) * | 2021-04-25 | 2021-09-03 | 华中科技大学 | Low parasitic inductance series power module |
| CN113345871B (en) * | 2021-04-25 | 2022-09-13 | 华中科技大学 | Low parasitic inductance series power module |
| CN114867273A (en) * | 2022-05-31 | 2022-08-05 | 广东美的白色家电技术创新中心有限公司 | Power electronic unit |
| CN114867273B (en) * | 2022-05-31 | 2024-04-05 | 广东美的白色家电技术创新中心有限公司 | Power electronic unit |
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Application publication date: 20171212 |