CN103985809A - Large chip for LED lighting - Google Patents
Large chip for LED lighting Download PDFInfo
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- CN103985809A CN103985809A CN201410214077.9A CN201410214077A CN103985809A CN 103985809 A CN103985809 A CN 103985809A CN 201410214077 A CN201410214077 A CN 201410214077A CN 103985809 A CN103985809 A CN 103985809A
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- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005286 illumination Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 33
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- 239000002002 slurry Substances 0.000 claims description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 238000003466 welding Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000011236 particulate material Substances 0.000 claims description 15
- 238000013461 design Methods 0.000 claims description 12
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- 238000005520 cutting process Methods 0.000 claims description 9
- 238000001746 injection moulding Methods 0.000 claims description 9
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- 230000009471 action Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 4
- 239000008358 core component Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000012467 final product Substances 0.000 claims description 3
- 239000012634 fragment Substances 0.000 claims description 3
- 239000012943 hotmelt Substances 0.000 claims description 3
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- 239000007924 injection Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000002493 microarray Methods 0.000 claims description 3
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- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 13
- 230000003245 working effect Effects 0.000 description 12
- 239000000047 product Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/10—Controlling the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a large chip for LED lighting. The large chip comprises a first transparent substrate (421) with a fixed width W, N+1 parallel interface wires are arranged on the first transparent substrate (421), LED chip series connection sets formed by N LED chips (41) are arranged on the first transparent substrate (421), each LED chip (41) is located between two adjacent interface wires, the distance between the two adjacent interface wires is WJG, wherein the WJG=(W-the with of the interface wire)/N, and the positive pole and the negative pole of each LED chip (41) are respectively connected to the two adjacent interface wires. Meanwhile, the multiple LED series connection sets are in series connection, so that an N-column and multi-row LED chip array capable of extending in the length direction of the first transparent substrate (421) is formed in the first transparent substrate (421), wherein N is an integer ranging from 3 to 7.
Description
Technical field
The present invention relates to a kind of LED illumination large chip, belong to LED lighting technical field.
Background technology
The Chinese patent application such as application number 201310140124.5,201310140138.7,201310140150.8,201310140105.2,201310140134.9,201310140106.7,201310140151.2,201310140136.8 disclose multiple ray machine module technical schemes that can use on LED bulb general and that exchange.These technology are the Lighting Industry framework of setting up centered by LED bulb, and the basic concept that makes LED bulb (lighting source), light fixture, illumination control become the end product of independent production, application is laid a good foundation.But above-mentioned patent not yet solves the problem of the built-in driving power of ray machine module.
Existing LED driving power mostly is Switching Power Supply, and volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, its volume is still not enough to little of being placed into ray machine module internal.
LED illumination provides LED chip to start from chip factory need to be through a series of such as paster to illuminating lamp, die bond, welding, encapsulation, color-division, drive design, heat dissipation design, complicated and the tediously long Production design process such as Design of Luminaires, owing to there being chip layout design, many uncertainties such as heat conductive design and power drives design, this industry structure centered by LED chip is difficult to realize light source (bulb) standardization under the pattern of replaceable light source, finally causing the LED lamp in terminal market is main body mainly with the overall structure lamp of non-exchange light source, the industry complexity and the industrial concentration that has reduced illuminating product of illuminating product are increased.
Further creation idea advanced person, the built-in driving power of easier standardized LED bulb ray machine module and LED illumination chip organization plan are of far-reaching significance for large-scale promotion LED illumination.
Application number is that the Chinese patent application such as 201310140106.7,201310140105.2,201310140134.9 disclose the multiple technical schemes that can make at epitaxial wafer ray machine module.The problem of ray machine template being used as to the existence of epitaxial wafer direct growth chip is because ray machine template has 7 specifications, has the requirement of multiple power in each specification, and the producer can face the less awkward problem of the too many batch of kind; Secondly LED chip and interlock circuit area occupied are less with respect to ray machine template area, and production cost can be in any more; There is again the ray machine of being template thicker compared with substrate, also relatively increased cost.
Summary of the invention
The object of the invention is to, provide a kind of
lEthe D large chip that throws light on.It can be advantageously used in the LED ray machine module of different capacity requirement, and production cost of the present invention is low, be convenient to assembling, is conducive to the standardization of LED illumination, promotes on a large scale.
Technical scheme of the present invention: the LED large chip that throws light on, be characterized in: comprise that a width is fixed as the first transparency carrier of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier is provided with N LEDs chip and forms LED chip series connection group, every LEDs chip is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N), and the both positive and negative polarity of every LEDs chip is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make to form on the first transparency carrier the LED chip array of the N row multirow that can extend on the first transparency carrier length direction, and N is the integer between 3 to 7.
In above-mentioned LED illumination large chip, described LED chip array and the interface lead formation method on the first transparency carrier is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial loayer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and transparency carrier is as substrate; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, as tin indium oxide (ITO), to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is to adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier that produces silver slurry circuit, and be connected with the silver slurry circuit on the first transparency carrier by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit comprises interface lead and the wire of connection chip that is connected LED chip and interface lead.
The LED ray machine module that uses aforesaid LED illumination large chip to set up, it is set up by the following method: according to power needs, LED illumination large chip is cut out, the LED illumination large chip that is cut into different length has different power, printed silver slurry circuit in ray machine template, in ray machine template, silver slurry circuit also has interface lead, and number is all identical with the interface lead of LED illumination large chip with spacing; The LED one side that the one side of large chip microarray strip is attached to ray machine Form board tape silver slurry circuit of throwing light on is carried out to butt welding, and both interface lead are corresponding welding mutually; The one side that simultaneously one side of LED driving power large chip band silver slurry circuit is attached to ray machine Form board tape silver slurry circuit is carried out butt welding; Thereby throw light on large chip and LED driving power large chip of LED connected; Finally with transparent adhesive tape encapsulation LED illumination large chip and driving power large chip gap around.Described LED chip carrying voltage is about DC3.2V (suitably adjusting according to actual conditions) or is greater than the high voltage of DC10V.
In aforesaid LED ray machine module, described LED driving power large chip comprises the second transparency carrier, and the second transparency carrier is printed with silver slurry circuit,, on silver slurry circuit, be formed with interface lead, interface lead has incoming end and output; The width W of the width of incoming end and ray machine template wire incoming end
gidentical or have a pad being connected with connector; The interface lead number of output is identical with the interface lead of LED illumination large chip with spacing, on the second transparency carrier, first paste power drives wafer stage chip and the rectifier bridge wafer stage chip of un-encapsulated, then the power drives wafer stage chip of un-encapsulated and rectifier bridge wafer stage chip are welded on the second transparency carrier; Rectifier bridge wafer stage chip can be merged in power drives wafer stage chip; The second transparency carrier has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2.
In aforesaid LED ray machine module, LED driving method on described LED ray machine module is: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip, the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count of power drives wafer stage chip control LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.Civil power AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, and voltage is the wavy curve of half period (180 degree), cycle pulsating dc voltage in the time that 0 spends is zero, and in the time that 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
In aforesaid LED ray machine module, the hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the change in voltage of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.LED load can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger, easily produces low-order harmonic at electrical network; Segmentation is many, circuit structure complexity.Generally get 4～6 sections for good.
In aforesaid LED ray machine module, set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current
wmaxsize, thereby realize luminosity adjustment to LED.
In aforesaid LED ray machine module, by being set, current sensor records effective operating current I in circuit
w, work as I
wexceed design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
In aforesaid LED ray machine module, described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
In aforesaid LED ray machine module, it is the LED chip group with different maximum carrying magnitudes of voltage that each section of LED load being cascaded is set, and can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
In aforesaid LED ray machine module, the method for adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. increase because LED voltage increases electric current, essence is that power damages.The load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
In aforesaid LED ray machine module, the material of described ray machine template is that thin slice transparent non-metallic material is (as SiO
2, Al
2o
3deng), it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.(material is easy crisp and hardness is higher.While like this can only cutting mode being processed into ray machine shape of template, cost is higher.)
Use aforesaid LED ray machine module to set up the method for LED illumination core component: after flexible circuit being set on LED ray machine module, to pack the inner cover with fluorescent material into; That the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed with the inner cover of fluorescent material; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
Compared with prior art, LED illumination large chip of the present invention can be advantageously used in the LED ray machine module of different capacity requirement, it can be under the driving of power supply large chip, LED illumination large chip is designed to fixing width W, length determines according to the specification of manufacturing equipment, with time be divided into different length.LED illumination large chip need not cut into grade size for single led chip like this, the mechanical property requirement to substrate by reduction when chip manufacturing, high purity aluminium oxide that makes similar polycrystalline etc. enters the range of choice of substrate, has reduced significantly the manufacturing cost of LED illumination chip; Every LEDs chip the two poles of the earth in illumination large chip are without welding, and the less while that electrode can do also can adopt the scheme of transparency electrode, can effectively increase the light-emitting area of chip and improve luminous efficiency; From chip factory, illumination large chip only need in conjunction with power supply large chip can directly mount be welded in ray machine template or bulb heat conduction support on, LED illumination production procedure is short and simple.Meanwhile, large chip is by using power segmentation cutting, and design, to produce in the whole process of product easily definite factor more, is convenient to it to control to realize standardized work; Can meet majority of illumination application requirements by the illumination large chip of cutting apart with power, illumination large chip non-like this cutting, a limited number of is easily realized the industrial concentration of height, will significantly reduce the manufacturing cost of illuminating product; Changed the existing encapsulation industrial concept of LED, illumination large chip adopts after upside-down mounting and only needs simplified package large chip periphery, or can adopt the techniques such as cover plate encapsulation when employing formal dress, has got around external patent barrier.
Ray machine module of the present invention goes for all kinds of bulb patents of inventor's earlier application, original ray machine module in replacement bulb.Ray machine module of the present invention structurally can built-in power and LED illumination chip, and volume is little, is easy to realize standardization.The present invention can change existing industry structure centered by LED chip, LED ray machine module of the present invention can be realized light source (bulb) standardization under the pattern of replaceable light source, thereby can reduce the industry complexity of illuminating product and the industrial concentration of raising illuminating product.
LED large chip of the present invention can adopt external driving power directly to drive.
In addition, the present invention is converted into Rectified alternating current by rectifier bridge by civil power, voltage in each cycle is divided into multistage by phase place simultaneously, and utilize the different characteristic of voltage in multistage, use switch to regulate being connected in series into the hop count of the LED load of operating state, thereby make LED load enter the operational mode of controlization, this operational mode can meet LED chip power supply, and this LED type of drive of the present invention can greatly reduce the complexity of LED driving power, thereby make the built-in driving power of LED ray machine module become possibility, it is significant that this realizes larger versatility and interchangeability for LED bulb.
Brief description of the drawings
Fig. 1 is LED chip outward appearance front view of the present invention;
Fig. 2 is LED illumination large chip outside drawing of the present invention;
Fig. 3 is the LED illumination large chip outside drawing that the present invention adopts spun gold weldering knot;
Fig. 4 is the large-scale ray machine template that the present invention is printed with silver slurry circuit;
Fig. 5 is the not large-scale ray machine module of sealing of the present invention;
Fig. 6 is the present invention's large-scale ray machine module of sealing;
Fig. 7 is the structural representation of the ray machine core component of the embodiment of the present invention;
Fig. 8 is the high-power LED driving power source large chip front view of the embodiment of the present invention;
Fig. 9 is the LED voltage and current waveform of the embodiment of the present invention;
Figure 10 is the extra-high pressure operate power oscillogram of the embodiment of the present invention;
The light modulation operate power oscillogram of Figure 11 embodiment of the present invention;
The circuit connection diagram of Figure 12 embodiment of the present invention;
The driving power chip internal circuit diagram of Figure 13 embodiment of the present invention;
The LED voltage and current waveform of 3 sections of loads of Figure 14 embodiment of the present invention;
The LED chip array module power of Figure 15: embodiment of the present invention DC52V series connection loads distribution map;
Figure 16: embodiment of the present invention LED chip array carrying voltage tentative calculation figure;
Figure 17: single DC52V chip bearing power tentative calculation figure of the embodiment of the present invention;
The LED chip array module power of Figure 18: embodiment of the present invention 2*52V+4*35V series connection loads distribution map;
Figure 19 is the low-power LED driving power large chip front view of the embodiment of the present invention.
Being labeled as in accompanying drawing: 41-LED chip, the 41.1-P utmost point, the 41.2-N utmost point, 41.3-metal electrode, 41.4-semiconductor, 42-transparent cover plate, 43-ray machine template, 43.1-ray machine module fixing hole, the flexible built-up circuit of 44-, 44.1-solder joint, the transparent sealing of 45-, the inner cover of 61-with fluorescent material, 414-silver slurry printed circuit, 417-welds gold thread, 410-LED driving power large chip, 411-LED power drives wafer stage chip, 412-rectifier bridge wafer stage chip, 413-the second transparency carrier, 414-silver slurry circuit, 414.1-pad, 416-resistance, the 420-LED large chip that throws light on, 421-the first transparency carrier.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated, but not as the foundation to the present invention's restriction.
Embodiment.The LED large chip that throws light on, as shown in Figures 1 to 3: comprise that a width is fixed as the first transparency carrier 421 of W, the first transparency carrier 421 is provided with the parallel interface lead of N+1 bar, the first transparency carrier 421 is provided with N LEDs chip 41 and forms LED chip series connection group, every LEDs chip 41 is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N), and the both positive and negative polarity of every LEDs chip 41 is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make to form on the first transparency carrier 421 the LED chip array of the N row multirow that can extend on the first transparency carrier 421 length directions, and N is the integer between 3 to 7.
Described LED chip array and the interface lead formation method on the first transparency carrier 421 is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial loayer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and transparency carrier is as substrate; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, as tin indium oxide (ITO), to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is to adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier 421 that produces silver slurry circuit 414, and be connected with the silver slurry circuit 414 on the first transparency carrier 421 by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit 414 comprises interface lead and the wire of connection chip that is connected LED chip and interface lead.
The LED ray machine module that uses aforesaid LED illumination large chip to set up, as shown in Figs. 4-6, it is set up by the following method: according to power needs, LED illumination large chip 420 is cut out, the LED illumination large chip 420 that is cut into different length has different power, printed silver slurry circuit 414 in ray machine template 43, in ray machine template 43, silver slurry circuit 414 also has interface lead, and number is all identical with the interface lead of LED illumination large chip 420 with spacing; The throw light on one side of large chip 420 microarray strips of LED is attached to ray machine template 43 and carries out butt welding with the one side of silver slurry circuit 414, and both interface lead are corresponding welding mutually; LED driving power large chip 410 is attached to ray machine template 43 with the one side of silver slurry circuit simultaneously and carries out butt welding with the one side of silver slurry circuit 414; Thereby throw light on large chip 420 of LED is connected with LED driving power large chip 410; Finally with transparent adhesive tape encapsulation LED illumination large chip and driving power large chip gap around.Described LED chip carrying voltage is～DC3.2V or be greater than the high voltage of DC10V.
Described LED driving power large chip 410, as shown in Fig. 8 and Figure 19, comprises that the second transparency carrier 413, the second transparency carriers 413 are printed with silver slurry circuit, on silver slurry circuit, is formed with interface lead, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template 43 wire incoming ends
gidentical or have a pad being connected with connector; The interface lead number of output is identical with the interface lead of LED illumination large chip 420 with spacing, on the second transparency carrier 413, first paste power drives wafer stage chip 411 and the rectifier bridge wafer stage chip 412 of un-encapsulated, then the power drives wafer stage chip 411 of un-encapsulated and rectifier bridge wafer stage chip 412 are welded on the second transparency carrier 413; Rectifier bridge wafer stage chip (412) can be merged in power drives wafer stage chip (411); The second transparency carrier 413 has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2.
LED driving method on described LED ray machine module is: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip 412, and the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip 411 is controlled LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
The hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the change in voltage of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
Set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current
wmaxsize, thereby realize luminosity adjustment to LED.
By being set, current sensor records effective operating current I in circuit
w, work as I
wexceed design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
Described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
Each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
The method of adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. increase because LED voltage increases electric current, essence is that power damages.Suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
The material of described ray machine template 43 is thin slice transparent non-metallic material, as SiO
2, Al
2o
3deng, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.Because material is easily crisp and hardness is higher, while therefore can only cutting mode being processed into ray machine shape of template, cost is higher.
Use aforesaid LED ray machine module to set up the method for LED illumination core component, as shown in Figure 7, pack the inner cover 61 with fluorescent material into after flexible circuit 44 being set on LED ray machine module; Inner cover 61 with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
It is below the operation principle of the present invention as an example of 6 groups of LED loads example.Be that n value is 6.
First, alternating current AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, referring to Fig. 9, voltage is the wavy curve of half period (180 degree), and cycle pulsating dc voltage in the time that 0 spends is zero, and in the time that 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
Job requirement of the present invention, pulsating dc voltage be greater than zero be less than or equal to V
wRbetween, 6 sections of loads are set altogether, between each section of load, form series system, raise with voltage, load (being LED load) series connection hop count increases step by step, and load voltage is by switch controlled loading, and referring to Fig. 9 and Figure 12, voltage switch node is voltage segmentation boundary.
Power supply management operational mode: the present invention is design current control device not, V is only depended in the keying of switches at different levels
wvariation, referring to Fig. 9, Figure 12 and Figure 13.
Cycle 0～90 is while spending:
The 1st section: work initial condition, in circuit, K switch 1～K6 is in opening (ON) from 0 initial the cycle, and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED composition of/6 tandem workings;
The 2nd section: work as V
wbe more than or equal to 1V
wR/ 6 o'clock, K switch 1 was closed (OFF), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED composition of/6 tandem workings;
The 3rd section: work as V
wbe more than or equal to 2V
wR/ 6 o'clock, K switch 1 was in OFF, and K switch 2 is closed (OFF), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED composition of/6 tandem workings;
The 4th section: work as V
wbe more than or equal to 3V
wR/ 6 o'clock, K switch 1～K2 was in OFF, and K switch 3 is closed (OFF), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED composition of/6 tandem workings;
The 5th section: work as V
wbe more than or equal to 4V
wR/ 6 o'clock, K switch 1～K3 was in OFF, and K switch 4 is closed (OFF), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED composition of/6 tandem workings;
The 6th section: work as V
wbe more than or equal to 5V
wR/ 6 o'clock, K switch 1～K4 was in OFF, and K switch 5 is closed (OFF), and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED composition of/6 tandem workings;
When K switch 1～K6 closes, the method for closing of time delay 0.1ms can be adopted, electric current relatively stably can be obtained.
Cycle 90～180 is while spending:
The 6th section: work initial condition, voltage is reduced downwards by maximum, and in circuit, K switch 1～K5 is in closed condition (OFF), and K switch 6 is in opening, and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED composition of/6 tandem workings;
The 5th section: work as V
wbe less than or equal to 5V
wR/ 6 o'clock, K switch 5～K6 opened (ON), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED composition of/6 tandem workings;
The 4th section: work as V
wbe less than or equal to 4V
wR/ 6 o'clock, K switch 4～K6 opened (ON), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED composition of/6 tandem workings;
The 3rd section: work as V
wbe less than or equal to 3V
wR/ 6 o'clock, K switch 3～K6 opened (ON), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED composition of/6 tandem workings;
The 2nd section: work as V
wbe less than or equal to 2V
wR/ 6 o'clock, K switch 2～K6 opened (ON), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED composition of/6 tandem workings;
The 1st section: work as V
wbe less than or equal to 1V
wR/ 6 o'clock, K switch 1～K6 opened (ON), and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED composition of/6 tandem workings.
When K switch 1～K6 opens, the open method of 0.1ms in advance can be adopted, electric current relatively stably can be obtained.
Light modulation operational mode: when the given voltage VT=0 of outer setting one, V
wmaxcorresponding CV
wR, when the given VT=5V of external voltage, V
wmaxcorresponding 0V, arranges 0≤V
wmax≤ CV
wR, C adjusts coefficient, for the multiple of rated voltage, as C=1.12.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.It act as a kind of light modulation scheme.Referring to Figure 11, Figure 12 and Figure 13, regulate V
wmaxlower than V
wR, in figure, dash area will increase, and the power that is input to load will reduce, thereby reach the object of light modulation.Example: when LED in the normal work of AC220V civil power is, while adjusting alternating current voltage to the voltage of AC180V, the dash area in figure is V
whigher than the formation power perspective view part of 254V, from cycles approximately 55.5 degree to 124.5 degree, because corresponding K switch x in this period is in closing (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 57.0%) by disallowable, this part power consumption is not loaded in load, and the brightness of load is reduced.Work as V
wmaxequal at 0 o'clock, all switches will cut out (OFF), and load supplying amount is zero.Can accomplish stepless dimming, and energy consumption can not occur.
Voltage protection operational mode: V is set
wmax=CV
wR.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.Referring to Figure 10, Figure 12 and Figure 13, example: in the time that civil power reaches the high voltage of 270V, the dash area in figure is V
whigher than the formation power echo part of 348V, from cycles approximately 66 degree to 114 degree, because K1～K6 switch in this period is in cutting out (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 50.2%) by disallowable, this part power consumption is not loaded in load, and load can not burnt because of overvoltage.; When electrical network is surged, can there is instantaneous peak voltage widely higher than V
wmax, each section of switch, in closed condition, realized the object of the protection of surging this moment.
Overcurrent protection operational mode: the present invention has overcurrent protection, referring to Figure 13, current sensor records effective operating current I in circuit
wexceed design load KI
wR, K is for adjusting coefficient, example: set I
wR=275mA, K=1.2, logic switch controller will cut out all K switch 1～K6 (OFF), and opening switch (ON) K1～K6 need reload after power supply is pressed and recover in next time.
According to principle same as described above, mode of loading can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger, easily produces low-order harmonic at electrical network, referring to Figure 14; Segmentation is many, circuit structure complexity.Generally get 4～6 sections for good.
Note: V
w-pulsating direct current operating voltage (1.4142* alternating voltage); V
wRthe specified maximum working voltage of-pulsating direct current (1.4142* alternating voltage); V
wmax-maximum the pulsating dc voltage (1.4142* alternating voltage) that allows; I
w-effectively operating current.I
wR-specified effective operating current.
If civil power is AC220, the voltage after rectification is DC311V, and taking every group of LED load as single chips is as example, every chips bears DC52V; As AC110, chip bears DC26V.If the loading power area of pulsating direct current half-wave is 1, referring to Figure 15, it is larger that each LED load in figure (LED module 1 to 6) is loaded power difference, LED module 1 reach pulsating direct current half-wave loading power area 20.68% (for chip rated output 84.4%); And LED module 6 only have 5.11% (for chip rated output 19.2%), be about 1/4th power of module 1, through actual measurement checking, the intrinsic brilliance of module 6 is very low; The power being on average loaded of whole chipset is 52.4% of chip rated output, and the utilance of chip is lower; And the rated output of chipset (dotted line frame area) is the loading power area of pulsating direct current half-wave 159%.Because chip amount of redundancy is excessive, not only chip waste, also causes driving power excessive and waste, and has increased the difficulty that cloth is set up simultaneously.Therefore, under Constant Direct Current state, select the method for chip voltage to have some problems under pulsating direct current state, how to ensure that, under the prerequisite of chip trouble free service, the utilance that improves chip becomes a problem to be solved.
The rated output of setting the LED chip array of 6 series connection loads 1.59 times of power by pulsating direct current half-wave and turns down to 1.2 times that (increase because LED voltage increases electric current, essence is that power damages.1.2 times power surpluses are set and enough ensure that LED is not burnt), referring to Figure 16, if LED chip array chip load power (rectangle dash area area in figure) is pulsating direct current half-wave while loading power (pulsating direct current half-wave part area) 1.2 times, can be extrapolated civil power and be AC220V by Figure 16 mapping time, the carrying voltage of chip array be DC236V;
Referring to Figure 17, LED module 1 is arranged respectively to different magnitudes of voltage to module 6, the chip that can obtain under different bearer magnitude of voltage loads power area (dash area in figure);
Adopt 2*52V+4*35V high voltage chip (model of module 1 and module 2 is that VES-AADBHV45, module 3 are ES-AADBHF40 to module 6) composition serial array, the carrying voltage of chip array is adjusted into DC244V; Make Figure 18, it is 96.67% of pulsating direct current half-wave power area that the chip array of acquisition is loaded power area, and the power that chip array is loaded approaches 1 for perfect condition; The power that now LED chip array is loaded is chip array rated output 77.6%; Experimental verification and estimated value are close.
The module of each voltage section loads power checking: the loading power area of establishing pulsating direct current half-wave is 1, and when voltage is ordinate, easily calculating DC52V chip rated output by Figure 17 is 26.52%, and in like manner, the rated output of DC35V chip is 17.89%; Figure 18 is civil power while being AC220V, the power situation being loaded of the each module of LED chip array; Table 1 is that power that chip array is loaded is while being pulsating direct current half-wave power area 1, line voltage is respectively AC220V, AV246V, each module of AC270V is loaded the situation of power, in table, can find out, only module 3 slightly transships at DC311V and DC348V, but because module 1 and module 2 have margin of power, experimental results show that module 3 can pass through.
In the time of other line voltage grades, optimal way is with reference to above-mentioned carrying out.
Under perfect condition, the checking computations of chip bearing power are as shown in the table:
Claims (13)
- The 1.LED large chip that throws light on, it is characterized in that: comprise that a width is fixed as the first transparency carrier (421) of W, the first transparency carrier (421) is provided with the parallel interface lead of N+1 bar, the first transparency carrier (421) is provided with N LEDs chip (41) and forms LED chip series connection group, every LEDs chip (41) is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W jGequaling W, to subtract interface lead wide again divided by N, and the both positive and negative polarity of every LEDs chip (41) is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make the LED chip array of the N row multirow that the upper formation of the first transparency carrier (421) can extend on the first transparency carrier (421) length direction, and N is the integer between 3 to 7.
- 2. LED illumination large chip according to claim 1, it is characterized in that: described LED chip array and the interface lead formation method on the first transparency carrier (421) is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial loayer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and transparency carrier is as substrate; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is to adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier (421) that produces silver slurry circuit (414), and be connected with the silver slurry circuit (414) on the first transparency carrier (421) by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit (414) comprises interface lead and the wire of connection chip that is connected LED chip and interface lead.
- 3. right to use requires the LED ray machine module that the LED illumination large chip described in 1 or 2 is set up, it is characterized in that, it is set up by the following method: according to power needs, LED illumination large chip (420) is cut out, the LED illumination large chip (420) that is cut into different length has different power, at the upper printed silver slurry circuit of ray machine template (43) (414), the upper silver slurry circuit of ray machine template (43) (414) also has interface lead, and number is all identical with the interface lead of LED illumination large chip (420) with spacing; The LED one side that the one side of large chip (420) microarray strip is attached to ray machine template (43) band silver slurry circuit (414) of throwing light on is carried out to butt welding, and both interface lead are corresponding welding mutually; The one side that simultaneously one side of LED driving power large chip (410) band silver slurry circuit (414) is attached to ray machine template (43) band silver slurry circuit (414) is carried out butt welding; Thereby throw light on large chip (420) and LED driving power large chip (410) of LED connected; Finally with transparent adhesive tape encapsulation LED illumination large chip and driving power large chip gap around; Described LED chip carrying voltage is DC3.2V or the high voltage that is greater than DC10V.
- 4. LED ray machine module according to claim 3, it is characterized in that: described LED driving power large chip (410) comprises the second transparency carrier (413), the second transparency carrier (413) is printed with silver slurry circuit, on silver slurry circuit, be formed with interface lead, interface lead has incoming end and output; The width W of the width of incoming end and ray machine template (43) wire incoming end gidentical or have a pad being connected with connector; The interface lead number of output is identical with the interface lead of LED illumination large chip (420) with spacing, on the second transparency carrier (413), first paste power drives wafer stage chip (411) and the rectifier bridge wafer stage chip (412) of un-encapsulated, then the power drives wafer stage chip (411) of un-encapsulated and rectifier bridge wafer stage chip (412) are welded on the second transparency carrier (413); Rectifier bridge wafer stage chip (412) can be merged in power drives wafer stage chip (411); The second transparency carrier (413) has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2.
- 5. LED ray machine module according to claim 4, it is characterized in that, LED driving method on described LED ray machine module is: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip (412), the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip (411) is controlled LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
- 6. LED ray machine module according to claim 5, is characterized in that: the hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the change in voltage of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
- 7. LED ray machine module according to claim 6, is characterized in that: the pulsating direct current operating voltage V that sets Rectified alternating current wbe greater than V wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current wmaxsize, thereby realize luminosity adjustment to LED.
- 8. LED ray machine module according to claim 6, is characterized in that: record effective operating current I in circuit by current sensor is set w, work as I wexceed design load KI wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I wRfor specified effective operating current.
- 9. LED ray machine module according to claim 6, is characterized in that: described switch is at pulsating dc voltage ascent stage time delay t mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage mmillisecond action, to obtain LED operating current relatively stably.
- 10. LED ray machine module according to claim 5, it is characterized in that: it is the LED chip group with different maximum carrying magnitudes of voltage that each section of LED load being cascaded is set, and can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
- 11. LED ray machine modules according to claim 10, is characterized in that, the method for adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
- 12. LED ray machine modules according to claim 3, it is characterized in that: the material of described ray machine template (43) is thin slice transparent non-metallic material, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.
- 13. rights to use require the LED ray machine module described in 1 to 12 arbitrary claim to set up the method for LED illumination core component: after flexible circuit (44) is set on LED ray machine module, pack the inner cover (61) with fluorescent material into; Inner cover (61) with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
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| PCT/CN2015/079152 WO2015176626A1 (en) | 2014-05-20 | 2015-05-18 | Led large chip and optical machine module group |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN105627125A (en) * | 2016-03-11 | 2016-06-01 | 贵州光浦森光电有限公司 | Large-chip LED lamp filament and large-chip LED lamp filament bulb |
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| KR20090119862A (en) * | 2007-01-22 | 2009-11-20 | 크리 엘이디 라이팅 솔루션즈, 인크. | Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters |
| CN203179891U (en) * | 2013-04-22 | 2013-09-04 | 贵州光浦森光电有限公司 | LED bulb optical module employing transparent substrate |
| CN203812914U (en) * | 2014-05-20 | 2014-09-03 | 贵州光浦森光电有限公司 | LED illumination large chip |
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2014
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN105627125A (en) * | 2016-03-11 | 2016-06-01 | 贵州光浦森光电有限公司 | Large-chip LED lamp filament and large-chip LED lamp filament bulb |
| CN105627124A (en) * | 2016-03-11 | 2016-06-01 | 贵州光浦森光电有限公司 | LED lamp filament assembly, method for forming LED lamp filament bulb and LED lamp filament bulb |
| CN105627124B (en) * | 2016-03-11 | 2019-07-30 | 贵州光浦森光电有限公司 | A kind of LED filament component, the method and LED filament light bulb for setting up LED filament light bulb |
| WO2022036681A1 (en) * | 2020-08-21 | 2022-02-24 | 柯银湖 | Led light-emitting source device and manufacturing method therefor |
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| CN103985809B (en) | 2017-05-10 |
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