CN203810157U - LED-light machine module with perpendicularly arranged large chips - Google Patents
LED-light machine module with perpendicularly arranged large chips Download PDFInfo
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- CN203810157U CN203810157U CN201420258611.1U CN201420258611U CN203810157U CN 203810157 U CN203810157 U CN 203810157U CN 201420258611 U CN201420258611 U CN 201420258611U CN 203810157 U CN203810157 U CN 203810157U
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Abstract
The utility model discloses an LED-light machine module with perpendicularly arranged large chips. The LED-light machine module comprises a transparent light machine template (43) printed with a silver paste circuit. The silver paste circuit is provided with connector leads on the light machine template (43), and the width and the distances of the connector leads are identical with the width W and the distance WJG of large LED lighting chips (420) and a large LED driving power source chip (410). The large LED lighting chips (420) are connected to the light machine template (43) perpendicularly through one or more L-shaped D-type transparent transition circuit integrated transparent blocks (460). For a large light machine module, the light machine module (43) is provided with B-type transparent transition circuit integrated transparent blocks (440) to connect the large LED driving power chip (410) with the one or more L-shaped C-type transparent transition circuit integrated transparent blocks (450), and one or more large LED lighting chips (420) are perpendicularly connected to the light machine module (43) through the C-type transparent transition circuit integrated transparent blocks (450).
Description
Technical field
The utility model relates to the vertically arranged LED ray machine of a kind of large chip module, belongs to LED lighting technical field.
Background technology
The Chinese patent application such as application number 201310140124.5,201310140138.7,201310140150.8,201310140105.2,201310140134.9,201310140106.7,201310140151.2,201310140136.8 disclose a plurality of ray machine module technical schemes that can use on LED bulb general and that exchange.These technology are for setting up the Lighting Industry framework centered by LED bulb, and the basic concept that makes LED bulb (lighting source), light fixture, illumination control the end product that becomes independent production, application is laid a good foundation.But above-mentioned patent not yet solves the problem of the built-in driving power of ray machine module.
Existing LED driving power mostly is Switching Power Supply, and volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, its volume is still not enough to little of being placed into ray machine module internal.
LED illumination provides LED chip to start from chip factory need to be through a series of such as paster to illuminating lamp, die bond, welding, encapsulation, color-division, drive design, heat dissipation design, complicated and the tediously long Production design process such as Design of Luminaires, owing to there being chip layout design, many uncertainties such as heat conductive design and power drives design, this industry structure centered by LED chip is difficult to realize light source (bulb) standardization under the pattern of replaceable light source, finally causing LED lamp in terminal market is main body mainly with the overall structure lamp of non-exchange light source, the industry complexity and the industrial concentration that has reduced illuminating product of illuminating product have been increased.
Further creation idea advanced person, the built-in driving power of easier standardized LED bulb ray machine module and LED illumination chip organization plan are of far-reaching significance for large-scale promotion LED illumination.
Utility model content
The purpose of this utility model is, the vertically arranged LED ray machine of a kind of large chip module is provided.It is that a kind of brightness is better, easily standardized, the LED ray machine module of built-in driving power and LED illumination chip structure, and it is structurally conducive to the standardization of LED illumination, promotes on a large scale.
The technical solution of the utility model: the vertically arranged LED ray machine of large chip module, be characterized in: comprise the transparent ray machine template that is printed on silver slurry circuit, silver slurry circuit is formed with interface lead in ray machine template, width W and the spacing W of the width of its interface lead and spacing and LED illumination large chip and LED driving power large chip
jGidentical; By 1 and the above integrated transparent block of the transparent transition circuit of D type that is L shape, the LED large chip that throws light on is connected in ray machine template perpendicular to ray machine template; Or for large-scale ray machine template, by the integrated transparent block of the transparent transition circuit of Type B, LED driving power large chip and 1 and the above integrated transparent block of the transparent transition circuit of C type that is L shape are connected to 1 and above LED illumination large chip in ray machine template perpendicular to ray machine template; Again the one side of LED driving power large chip band silver slurry circuit and the one side of transparent ray machine Form board tape silver slurry circuit are obtained to ray machine module by interface lead butt welding.
Aforesaid large chip is arranged vertically in LED ray machine module, and for medium and small LED ray machine module, external power source or signal directly access from the LED driving power large chip being welded on ray machine template 43 by connector; LED ray machine module for large-scale, is also welded with flexible circuit 44 in ray machine template, external power source or signal connect flexible circuit by connector and be linked on the LED driving power large chip being welded in ray machine template 43; Finally along all banding transparent adhesive tapes of LED driving power large chip, LED illumination large chip and the integrated transparent block of the transparent transition circuit of Type B (or the integrated transparent block of the transparent transition circuit of C type, or the integrated transparent block of the transparent transition circuit of D type), must encapsulate complete LED ray machine module.
Aforesaid large chip is arranged vertically in LED ray machine module, the integrated transparent block of the transparent transition circuit of described D type comprises the transparency carrier of L-type, on transparency carrier, be printed with silver slurry circuit, the interface lead that silver slurry circuit is L-type, width W, quantity N+1 and the spacing W of the width of its interface lead, quantity and spacing and LED illumination large chip and LED driving power large chip
jGidentical; The integrated transparent block of the transparent transition circuit of described C type comprises the transparency carrier of L-type, on transparency carrier, be printed with silver slurry circuit, silver slurry circuit is the 2 group interface wires that are L-type on space, width W, quantity N+1 and the spacing W of the width of the interface lead of every 1 group, quantity and spacing and LED illumination large chip and LED driving power large chip
jGidentical; The one side of described LED illumination large chip band silver slurry circuit with the one side of the integrated transparent block band silver of the transparent transition circuit that is L-type slurry circuit by interface lead butt welding; The one side of the band silver slurry circuit of the band silver slurry circuit another side of the integrated transparent block of transparent transition circuit of L-type and ray machine template is by interface lead butt welding; The interface lead of the integrated transparent block of the transparent transition circuit of described Type B has 1 group of incoming end and more than 1 group output, width W, quantity N+1 and the spacing W of the width of its interface lead, quantity and spacing and LED driving power large chip
jGidentical.
Aforesaid large chip is arranged vertically in LED ray machine module, described LED illumination large chip comprises that a width is fixed as the first transparency carrier of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier is provided with N LEDs chip and forms LED chip series connection group, every LEDs chip is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jGand the both positive and negative polarity of every LEDs chip is connected in two adjacent interface lead respectively=(W-interface lead is wide)/N); And a plurality of LED series connection groups in parallel simultaneously, make to form on transparency carrier the LED chip array of the N row multirow that can extend on transparency carrier length direction; N is the integer between 3 to 7; When setting up LED ray machine module, according to power needs, LED illumination large chip to be cut out, the LED illumination large chip that is cut into different length has different power; Described LED chip carrying voltage is about DC3.2V (suitably adjusting according to actual conditions) or is greater than the high voltage of DC10V.
Aforesaid large chip is arranged vertically in LED ray machine module, described LED chip array and the interface lead formation method on transparency carrier is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial layer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then through cutting, form the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire that is connected the connection chip of LED chip and interface lead, and substrate is as the first transparency carrier; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is: adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier that produces silver slurry circuit, and be connected with the silver slurry circuit on the first transparency carrier by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit comprises interface lead and the wire that is connected chip.
Aforesaid large chip is arranged vertically in LED ray machine module, and described LED driving power large chip comprises that width is fixed as the second transparency carrier of W, and transparency carrier is printed with silver slurry circuit, on silver slurry circuit, has interface lead, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template wire incoming end
gidentical or have a pad being connected with connector; In the interface lead of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); On the second transparency carrier, first paste power drives wafer stage chip and the rectifier bridge wafer stage chip of un-encapsulated, then the power drives wafer stage chip of un-encapsulated and rectifier bridge wafer stage chip are welded on the second transparency carrier, the second transparency carrier has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2; On LED driving power large chip, the purposes of interface lead is for connecting chip array on described LED illumination large chip.
Compared with prior art, ray machine module of the present utility model goes for the inventor in all kinds of bulb patents of first to file, original ray machine module in replacement bulb.Ray machine module of the present utility model structurally can built-in power and LED illumination chip, and volume is little, adopt the scheme of LED illumination large chip vertically to place, can realize the luminous effect of 306 degree, by reflecting layer is set after ray machine template, the luminous of LED is fully used, the LED reflective with traditional one side compares has higher luminous efficiency; Compare with the ray machine module patent application technology that the transparent ray machine template group before the inventor is built, reduced reflection of light number of times, there is higher brightness.The utility model can promote existing LED industry process reproduce and optimize, LED ray machine module of the present utility model can be realized light source (bulb) standardization under the pattern of replaceable light source, thereby can reduce the industry complexity and the industrial concentration that has reduced illuminating product of illuminating product.
Under the driving of LED power supply large chip, LED illumination large chip is designed to fixing width W, and length determines according to the specification of manufacturing equipment, with time be divided into different length.LED illumination large chip need not cut into grade size for single led chip like this, the mechanical property requirement to substrate by reduction during chip manufacturing, high purity aluminium oxide that makes similar polycrystalline etc. enters the range of choice of substrate, has reduced significantly the manufacturing cost of LED illumination chip.
Every LEDs chip the two poles of the earth in LED illumination large chip are without welding, and the less while that electrode can be done also can adopt the scheme of transparency electrode, can effectively increase the light-emitting area of chip and improve luminous efficiency.
From chip factory, LED illumination large chip only need can directly mount and be welded in ray machine template or bulb heat conduction support in conjunction with power supply large chip.LED illumination production procedure is short and simple.Meanwhile, large chip is by using power segmentation cutting, and design, to produce in the whole process of product easily definite factor more, is convenient to it to control to realize standardized work.
By the illumination large chip of cutting apart with power, can meet majority of illumination application requirements, illumination large chip non-like this cutting, a limited number of is easily realized the industrial concentration of scale, will significantly reduce the manufacturing cost of illuminating product.
The utility model has changed the existing encapsulation industrial concept of LED, after illumination large chip adopts upside-down mounting, only needs simplified package large chip periphery; While adopting formal dress, can adopt the techniques such as cover plate encapsulation; Got around external patent barrier.
And because existing LED driving power mostly is Switching Power Supply, volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, is then welded on PCB circuit board, its volume is still not enough to little of being placed into ray machine module internal.This thinking is difficult to make the microminiaturization of LED driving power, lightweight and transparence, cannot be placed in ray machine module, finally cannot realize civil power at LED bulb general and that exchange and directly access.
Adopt the power supply large chip of actuation techniques of the present utility model can meet LED illumination application as the various primary demands of driving, light modulation, overvoltage and surge protection, overload etc.; and that volume can be done is less, to such an extent as to driving power can be put into even ray machine module internal of bulb inside.This is low-cost to LED illumination, miniaturization has very important significance.The utility model promoted LED chip towards integrated future development, the appearance of the large chip that makes to throw light on becomes a reality.The common use of the two will further promote the fast development of LED Lighting Industry.
In addition, the utility model is converted into Rectified alternating current by rectifier bridge by civil power, voltage in each cycle is divided into multistage by phase place simultaneously, and utilize the different characteristic of voltage in multistage, use switch to regulate the hop count being connected in series into the LED load of duty, thereby make LED load enter intelligentized operational mode, this operational mode can meet LED chip power supply, and this LED type of drive of the present utility model can greatly reduce the complexity of driving power, thereby make the built-in driving power of LED ray machine module become possibility, it is significant that this realizes larger versatility and interchangeability for LED bulb.
Accompanying drawing explanation
Fig. 1 Fig. 1 is the circuit diagram in the small-sized ray machine template of the utility model embodiment;
Fig. 1 .1 is the small-sized ray machine modular structure schematic diagram of the utility model embodiment;
Fig. 2 is the circuit diagram in the medium-sized ray machine template of the utility model embodiment;
Fig. 2 .1 is the medium-sized ray machine modular structure schematic diagram of the utility model embodiment;
Fig. 3 is the circuit diagram in the large-scale ray machine template of the utility model embodiment;
Fig. 4 is the large-scale ray machine modular structure schematic diagram of the utility model embodiment;
Fig. 5 is the integrated transparent block structural representation of the Type B transition circuit of the utility model embodiment;
Fig. 6 is the integrated transparent block structural representation of C type transition circuit of the utility model embodiment;
Fig. 7 is the integrated transparent block structural representation of D type transition circuit of the utility model embodiment;
Fig. 8 is the structural representation of the utility model embodiment LED illumination large chip;
Fig. 9 is the structural representation of the utility model embodiment low-power LED driving power large chip;
Figure 10 is the structural representation of the ray machine core component of the utility model embodiment;
Figure 11 is the LED voltage and current waveform of the utility model embodiment;
Figure 12 is the extra-high pressure operate power oscillogram of the utility model embodiment;
The light modulation operate power oscillogram of Figure 13 the utility model embodiment;
The circuit connection diagram of Figure 14 the utility model embodiment;
The driving power chip internal circuit diagram of Figure 15 the utility model embodiment;
The LED voltage and current waveform of 3 sections of loads of Figure 16 the utility model embodiment;
The LED chip array module power of Figure 17 the utility model embodiment DC52V series connection loads distribution map;
Figure 18 the utility model embodiment LED chip array carrying voltage tentative calculation figure;
Mono-DC52V chip bearing power tentative calculation figure of Figure 19 the utility model embodiment;
The LED chip array module power of Figure 20 the utility model embodiment 2*52V+4*35V series connection loads distribution map;
Figure 22 is the bulb structure schematic diagram that the LED illumination core component of the utility model embodiment is set up;
Figure 21 is the structural representation of the utility model embodiment high-power LED driving power source large chip.
Being labeled as in accompanying drawing: 3-heat conduction support, 7-lens, 8-lens snap ring, 11-electrical connector, 14-snap ring hold-down screw, 43-ray machine template, 43.1-ray machine template fixing hole, 43.2-, the flexible built-up circuit of 44-, 44.1-solder joint, the transparent sealing of 45-, 61-is with the inner cover of fluorescent material, ring cover in 62-, snap ring in 81-, 103-radiator, 112-cable fixed mount, 410-LED driving power large chip, 410.1-transparent cover plate, 411-driving power wafer stage chip, 412-rectifier bridge wafer stage chip, 413-the second transparency carrier, 421-the first transparency carrier, 414-silver slurry circuit, 414.1-pad, the 420-LED large chip that throws light on, the integrated transparent block of 440-B type transition circuit, the integrated transparent block of 450-C type transition circuit.
Below in conjunction with drawings and Examples, the utility model is further described, but not as the foundation to the utility model restriction.
Embodiment.The vertically arranged LED ray machine of large chip module, comprise the transparent ray machine template 43 that is printed on silver slurry circuit, silver slurry circuit is formed with interface lead in ray machine template 43, width W and the spacing W of the width of its interface lead and spacing and LED illumination large chip 420 and LED driving power large chip 410
jGidentical; By 1 and the above integrated transparent block 460 of the transparent transition circuit of D type that is L shape, the LED large chip 420 that throws light on is connected in ray machine template 43 perpendicular to ray machine template 43; Or for large-scale ray machine template, by the integrated transparent block 440 of the transparent transition circuit of Type B, LED driving power large chip 410 and 1 and the above integrated transparent block 450 of the transparent transition circuit of C type that is L shape are connected to 1 and above LED illumination large chip 420 in ray machine template 43 perpendicular to ray machine template 43; Again the one side of LED driving power large chip 410 band silver slurry circuit and the one side of transparent ray machine template 43 band silver slurry circuit are obtained to A product by interface lead butt welding.
For medium and small LED ray machine module, as shown in Fig. 1, Fig. 1 .1, Fig. 2 and Fig. 2 .1, external power source or signal directly access from the LED driving power large chip 410 being welded on ray machine template 43 by connector 11; For large-scale LED ray machine module, as shown in Figure 3 and Figure 4, in ray machine template 43, be also welded with flexible circuit 44, external power source or signal connect flexible circuit 44 by connector 11 and are linked on the LED driving power large chip 410 being welded in ray machine template 43; Finally along LED driving power large chip 410, LED illumination large chip 420 and the integrated transparent block 440 of the transparent transition circuit of Type B, the integrated transparent block 450 of the transparent transition circuit of C type or 460 weeks banding transparent adhesive tapes 45 of the integrated transparent block of the transparent transition circuit of D type, obtain LED ray machine module.
The described integrated transparent block 460 of the transparent transition circuit of D type, as shown in Figure 7, the transparency carrier that comprises L-type, on transparency carrier, be printed with silver slurry circuit, the interface lead that silver slurry circuit is L-type, width W, quantity N+1 and the spacing W of the width of its interface lead, quantity and spacing and LED illumination large chip 420 and LED driving power large chip 410
jGidentical; The described integrated transparent block 450 of the transparent transition circuit of C type as shown in Figure 6, the transparency carrier that comprises L-type, on transparency carrier, be printed with silver slurry circuit, silver slurry circuit is the 2 group interface wires that are L-type on space, width W, quantity N+1 and the spacing W of the width of the interface lead of every 1 group, quantity and spacing and LED illumination large chip 420 and LED driving power large chip 410
jGidentical; The one side of described LED illumination large chip 420 band silver slurry circuit with the one side of the integrated transparent block band silver of the transparent transition circuit that is L-type slurry circuit by interface lead butt welding; The one side of the band silver slurry circuit of the band silver slurry circuit another side of the integrated transparent block of transparent transition circuit of L-type and ray machine template 43 is by interface lead butt welding; As shown in Figure 5, its interface lead has 1 group of incoming end and more than 1 group output to the integrated transparent block 440 of the transparent transition circuit of described Type B, width W, quantity N+1 and the spacing W of the width of its interface lead, quantity and spacing and LED driving power large chip 410
jGidentical.
Described LED illumination large chip 420, as shown in Figure 8, comprise that a width is fixed as the first transparency carrier 421 of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier 421 is provided with N LEDs chip 41 and forms LED chip series connection group, every LEDs chip 41 is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jGand the both positive and negative polarity of every LEDs chip 41 is connected in two adjacent interface lead respectively=(W-interface lead is wide)/N); And a plurality of LED series connection groups in parallel simultaneously, make to form on transparency carrier 421 the LED chip array of the N row multirow that can extend on transparency carrier 421 length directions; N is the integer between 3 to 7; When setting up LED ray machine module, according to power needs, LED illumination large chip 420 to be cut out, the LED illumination large chip 420 that is cut into different length has different power.
Described LED chip array and the interface lead formation method on transparency carrier is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial layer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then through cutting, form the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire that is connected the connection chip of LED chip and interface lead, and substrate is as the first transparency carrier; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is: adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier 421 that produces silver slurry circuit 414, and be connected with the silver slurry circuit 414 on the first transparency carrier 421 by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip 420, silver slurry brush circuit 414 comprises interface lead and the wire that is connected chip.
Described LED driving power large chip, as shown in Fig. 9 and Figure 21, comprises that width is fixed as the second transparency carrier 413 of W, and transparency carrier 413 is printed with silver slurry circuit, on silver slurry circuit 414, has interface lead, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template 43 wire incoming ends
gidentical or have a pad being connected with connector; In the interface lead of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); On the second transparency carrier 413, first paste power drives wafer stage chip 411 and the rectifier bridge wafer stage chip 412 of un-encapsulated, then the power drives wafer stage chip 411 of un-encapsulated and rectifier bridge wafer stage chip 412 are welded on the second transparency carrier 413, the second transparency carrier 413 has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2; On LED driving power large chip, the purposes of interface lead is for connecting chip array on described LED illumination large chip.
LED driving method on described LED ray machine module is: the rectifier bridge on rectifier bridge wafer stage chip 412 is converted into Rectified alternating current by civil power AC, and the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, a plurality of LED load series block groups form described LED chip array, when the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip 411 is controlled LED load series connection increases step by step, when the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
The hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the voltage change of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
Set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize the overvoltage of LED and surge protection; By adjusting the maximum of Rectified alternating current, allow pulsating dc voltage V
wmaxsize, thereby realize the luminosity adjustment to LED.
By being set, current sensor records effective operating current I in circuit
w, work as I
wsurpass design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
Described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
Each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can make the LED load series block group of working under switch is controlled obtain the operating current curve that approaches ideal sine wave.
The method of adjustment of the maximum carrying of described each section of LED load voltage is: 1. take pulsating dc voltage as ordinate, pulsating direct current cycle be abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
The material of described ray machine template 43 is thin slice transparent non-metallic material, as SiO
2, Al
2o
3deng, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.Because material is easily crisp and hardness is higher, while therefore can only cutting mode being processed into ray machine shape of template, cost is higher.
Use aforesaid LED ray machine module to set up the method for LED illumination core component, as shown in figure 10, pack the inner cover 61 with fluorescent material into after flexible circuit 44 being set on LED ray machine module, then be assembled into other assembly and can become bulb; Inner cover 61 with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
Figure 22 is the bulb structure schematic diagram that LED illumination core component described in the utility model is set up.
Below to take the operation principle of the present utility model that 6 groups of LED loads are example.Be that n value is 6.
First, alternating current AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, referring to Figure 11, voltage is the wavy curve of half period (180 degree), and cycle pulsating dc voltage when 0 spends is zero, and when 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
Job requirement of the present utility model, pulsating dc voltage be greater than zero be less than or equal to V
wRbetween, 3～7 sections of loads are set altogether, between each section of load, form series system, with voltage, raise, load (being LED load) series connection hop count increases step by step, and load voltage is by switch controlled loading, and referring to Figure 11 and Figure 14, voltage switch node is voltage segmentation boundary.
Power supply management operational mode: the utility model is design current control device not, V is only depended in the keying of switches at different levels
wvariation, referring to Figure 11, Figure 14 and Figure 15.
Cycle 0～90 is when spend:
The 1st section: work original state, the cycle is from 0 initial, K switch in circuit
1～K
6in opening (ON), electric current is mainly through node J
1pass through K switch
1form path, load is 1V by rated voltage
wRthe LED of/6 tandem workings forms;
The 2nd section: work as V
wbe more than or equal to 1V
wR/ 6 o'clock, K switch 1 was closed (OFF), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED of/6 tandem workings forms;
The 3rd section: work as V
wbe more than or equal to 2V
wR/ 6 o'clock, K switch 1 was in OFF, and K switch 2 is closed (OFF), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED of/6 tandem workings forms;
The 4th section: work as V
wbe more than or equal to 3V
wR/ 6 o'clock, K switch 1～K2 was in OFF, and K switch 3 is closed (OFF), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED of/6 tandem workings forms;
The 5th section: work as V
wbe more than or equal to 4V
wR/ 6 o'clock, K switch 1～K3 was in OFF, and K switch 4 is closed (OFF), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED of/6 tandem workings forms;
The 6th section: work as V
wbe more than or equal to 5V
wR/ 6 o'clock, K switch 1～K4 was in OFF, and K switch 5 is closed (OFF), and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED of/6 tandem workings forms;
When K switch 1～K6 closes, the method for closing of time delay 0.1ms can be adopted, electric current relatively stably can be obtained.
Cycle 90～180 is when spend:
The 6th section: work original state, voltage is reduced downwards by maximum, and in circuit, K switch 1～K5 is in closed condition (OFF), and K switch 6 is in opening, and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED of/6 tandem workings forms;
The 5th section: work as V
wbe less than or equal to 5V
wR/ 6 o'clock, K switch 5～K6 opened (ON), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED of/6 tandem workings forms;
The 4th section: work as V
wbe less than or equal to 4V
wR/ 6 o'clock, K switch 4～K6 opened (ON), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED of/6 tandem workings forms;
The 3rd section: work as V
wbe less than or equal to 3V
wR/ 6 o'clock, K switch 3～K6 opened (ON), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED of/6 tandem workings forms;
The 2nd section: work as V
wbe less than or equal to 2V
wR/ 6 o'clock, K switch 2～K6 opened (ON), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED of/6 tandem workings forms;
The 1st section: work as V
wbe less than or equal to 1V
wR/ 6 o'clock, K switch 1～K6 opened (ON), and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED of/6 tandem workings forms.
When K switch 1～K6 opens, the open method of 0.1ms in advance can be adopted, electric current relatively stably can be obtained.
Light modulation operational mode: during the given voltage VT=0 of outer setting one, V
wmaxcorresponding CV
wR, during the given VT=5V of external voltage, V
wmaxcorresponding 0V, arranges 0≤V
wmax≤ CV
wR, C adjusts coefficient, for the multiple of rated voltage, as C=1.12.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.It act as a kind of light modulation scheme.Referring to Figure 13, Figure 14 and Figure 15, regulate V
wmaxlower than V
wR, in figure, yl moiety will increase, and the power that is input to load will reduce, thereby reach the object of light modulation.Example: when LED in the normal work of AC220V civil power is, while adjusting alternating current voltage to the voltage of AC180V, the dash area in figure is V
wformation power perspective view part higher than 254V, from cycles approximately 55.5 degree to 124.5 degree, because corresponding K switch x in this period is in closing (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 57.0%) by disallowable, this part power consumption is not loaded in load, and the brightness of load is reduced.Work as V
wmaxequal at 0 o'clock, all switches will cut out (OFF), and load supplying amount is zero.Can accomplish stepless dimming, and energy consumption can not occur.
Voltage protection operational mode: V is set
wmax=CV
wR.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.Referring to Figure 12, Figure 14 and Figure 15, example: when civil power reaches the high voltage of 270V, the dash area in figure is V
wformation power perspective view part higher than 348V, from cycles approximately 66 degree to 114 degree, because K1～K6 switch in this period is in cutting out (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 50.2%) by disallowable, this part power consumption is not loaded in load, and load can not burnt because of overvoltage.
Overcurrent protection operational mode: the utlity model has overcurrent protection, referring to Figure 15, current sensor records effective operating current I in circuit
wsurpass design load KI
wR, K is for adjusting coefficient, example: set I
wR=275mA, K=1.2, logic switch controller will cut out all K switch 1～K6 (OFF), and opening switch (ON) K1～K6 need reload after power supply is pressed and recover in next time.
According to principle same as described above, mode of loading can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger, easily at electrical network, produces low-order harmonic, referring to Figure 16; Segmentation is many, and circuit structure is complicated.Generally get 4～6 sections for good.
Note: V
w-pulsating direct current operating voltage (1.4142* alternating voltage); V
wRthe specified maximum working voltage of-pulsating direct current (1.4142* alternating voltage); V
wmax-maximum the pulsating dc voltage (1.4142* alternating voltage) that allows; I
w-effective operating current.I
wR-specified effective operating current.
If civil power is AC220, the voltage after rectification is DC311V, take every group of LED load as single chips be example, every chips bears DC52V; As AC110, chip bears DC26V.If the loading power area of pulsating direct current half-wave is 1, referring to Figure 17, it is larger that each LED load in figure (LED module 1 to 6) is loaded power difference, LED module 1 reach pulsating direct current half-wave loading power area 20.68% (for chip nominal output 84.4%); And LED module 6 only have 5.11% (for chip nominal output 19.2%), be about 1/4th power of module 1, through actual measurement checking, the intrinsic brilliance of module 6 is very low; The power being on average loaded of whole chipset is 52.4% of chip nominal output, and the utilization rate of chip is lower; And the nominal output of chipset (dotted line frame area) is the loading power area of pulsating direct current half-wave 159%.Because chip amount of redundancy is excessive, not only chip waste, also causes driving power excessive and waste, and has increased the difficulty that cloth is set up simultaneously.Therefore, under Constant Direct Current state, select the method for chip voltage to have some problems under pulsating direct current state, how to guarantee that, under the prerequisite of chip trouble free service, the utilization rate that improves chip becomes a problem to be solved.
The nominal output of setting the LED chip array of 6 series connection loads 1.59 times of power by pulsating direct current half-wave and turns down to 1.2 times (consider small grids civil power there will be not less than 1.2 times of fluctuations), referring to Figure 18, when if LED chip array chip load power (dash area area in figure) is that pulsating direct current half-wave loads 1.2 times of power (pulsating direct current half-wave part area), in the time of can being extrapolated civil power and be AC220V by Figure 18 mapping, the carrying voltage of chip array be DC236V;
Referring to Figure 19, LED module 1 is arranged respectively to different magnitudes of voltage to module 6, the chip that can obtain under different bearer magnitude of voltage loads power area (dash area in figure);
Adopt 2*52V+4*35V high voltage chip (model of module 1 and module 2 is that VES-AADBHV45, module 3 are ES-AADBHF40 to module 6) to form serial array, the carrying voltage of chip array is adjusted into DC244V; Make Figure 20, it is 96.67% of pulsating direct current half-wave power area that the chip array of acquisition is loaded power area, and the power that chip array is loaded approaches 1 for perfect condition; The power that now LED chip array is loaded is chip array nominal output 77.6%; Experimental verification and estimated value are close.
The module of each voltage section loads power checking: the loading power area of establishing pulsating direct current half-wave is 1, and when voltage is ordinate, easily by Figure 19, calculating DC52V chip nominal output is 26.52%, and in like manner, the nominal output of DC35V chip is 17.89%; Figure 20 is civil power while being AC220V, the power situation being loaded of each module of LED chip array; Table 1 is that power that chip array is loaded is while being pulsating direct current half-wave power area 1, line voltage is respectively AC220V, AV246V, each module of AC270V is loaded the situation of power, in table, can find out, only module 3 slightly transships at DC311V and DC348V, but because module 1 and module 2 have margin of power, experimental results show that module 3 can pass through.
When other line voltage grades, optimal way is with reference to above-mentioned carrying out.
Under perfect condition, the checking computations of chip bearing power are as shown in the table:
Claims (5)
1. the vertically arranged LED ray machine of large chip module, it is characterized in that: comprise the transparent ray machine template (43) that is printed on silver slurry circuit, silver slurry circuit is formed with interface lead in ray machine template (43), width W and the spacing W of the width of its interface lead and spacing and LED illumination large chip (420) and LED driving power large chip (410)
jGidentical; LED illumination large chip (420) is connected in ray machine template (43) perpendicular to ray machine template (43) by 1 and the above integrated transparent block of the transparent transition circuit of D type (460) that is L shape; For large-scale ray machine module, ray machine template (43) is provided with the integrated transparent block of the transparent transition circuit of Type B (440) LED driving power large chip (410) is connected with 1 and the above integrated transparent block of the transparent transition circuit of C type (450) that is L shape, and 1 and above LED illumination large chip (420) are connected in ray machine template (43) perpendicular to ray machine template (43) by the integrated transparent block of the transparent transition circuit of C type (450); The one side of LED driving power large chip (410) band silver slurry circuit is with the one side of silver slurry circuit by interface lead butt welding with transparent ray machine template (43).
2. the vertically arranged LED ray machine of large chip according to claim 1 module, it is characterized in that: for medium and small LED ray machine module, external power source or signal directly access from the LED driving power large chip (410) being welded on ray machine template (43) by connector (11); For large-scale LED ray machine module, in ray machine template (43), be also welded with flexible circuit (44), external power source or signal connect flexible circuit (44) by connector (11) and are linked on the LED driving power large chip (410) being welded in ray machine template (43); LED driving power large chip (410), LED illumination large chip (420) and the integrated transparent block of the transparent transition circuit of Type B (440), the integrated transparent block of the transparent transition circuit of C type (450) or the integrated transparent block of the transparent transition circuit of D type (460) periphery are provided with transparent adhesive tape (45).
3. the vertically arranged LED ray machine of large chip according to claim 1 module, it is characterized in that: the integrated transparent block of the transparent transition circuit of described D type (460) comprises the transparency carrier of L-type, on transparency carrier, be printed with silver slurry circuit (414), the interface lead that silver slurry circuit (414) is L-type, width W, quantity N+1 and the spacing W of the width of its interface lead, quantity and spacing and LED illumination large chip (420) and LED driving power large chip (410)
jGidentical; The integrated transparent block of the transparent transition circuit of described C type (450) comprises the transparency carrier of L-type, on transparency carrier, be printed with silver slurry circuit (414), silver slurry circuit (414) is on space, to be 2 group interface wires of L-type, width W, quantity N+1 and the spacing W of the width of the interface lead of every 1 group, quantity and spacing and LED illumination large chip (420) and LED driving power large chip (410)
jGidentical; The one side of one end of described LED illumination large chip (420) band silver slurry circuit (414) and the integrated transparent block of the transparent transition circuit of D type (460) or the integrated transparent block of the transparent transition circuit of C type (450) band silver slurry circuit (414) is by interface lead butt welding; One end of the another side of band silver slurry circuit (414) of the integrated transparent block of the transparent transition circuit of D type (460) or the integrated transparent block of the transparent transition circuit of C type (450) and the band of ray machine template (43) silver slurry circuit is by interface lead butt welding; The interface lead of the integrated transparent block of the transparent transition circuit of described Type B (440) has 1 group of incoming end and more than 1 group output, width W, quantity N+1 and the spacing W of the width of its interface lead, quantity and spacing and LED driving power large chip (410)
jGidentical.
4. the vertically arranged LED ray machine of large chip according to claim 1 module, it is characterized in that: described LED illumination large chip (420) comprises that a width is fixed as the first transparency carrier (421) of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, transparency carrier (421) is provided with N LEDs chip (41) and forms LED chip series connection group, every LEDs chip (41) is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N, and the both positive and negative polarity of every LEDs chip (41) is connected in two adjacent interface lead respectively; And a plurality of LED series connection groups in parallel simultaneously, make the LED chip array of the N row multirow that the upper formation of the first transparency carrier (421) can extend on the first transparency carrier (421) length direction; N is the integer between 3 to 7.
5. the vertically arranged LED ray machine of large chip according to claim 1 module, it is characterized in that: described LED driving power large chip comprises that width is fixed as the second transparency carrier (413) of W, transparency carrier (413) is printed with silver slurry circuit, on silver slurry circuit (414), have interface lead, interface lead has incoming end and output; The width W of the width of incoming end and ray machine template (43) wire incoming end
gidentical or have a pad being connected with connector; In the interface lead of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N; On the second transparency carrier (413), be welded with power drives wafer stage chip (411) and the rectifier bridge wafer stage chip (412) of un-encapsulated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420258611.1U CN203810157U (en) | 2014-05-20 | 2014-05-20 | LED-light machine module with perpendicularly arranged large chips |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420258611.1U CN203810157U (en) | 2014-05-20 | 2014-05-20 | LED-light machine module with perpendicularly arranged large chips |
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| CN203810157U true CN203810157U (en) | 2014-09-03 |
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ID=51448902
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103968287A (en) * | 2014-05-20 | 2014-08-06 | 贵州光浦森光电有限公司 | LED light machine module with vertically arranged big chips |
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
-
2014
- 2014-05-20 CN CN201420258611.1U patent/CN203810157U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103968287A (en) * | 2014-05-20 | 2014-08-06 | 贵州光浦森光电有限公司 | LED light machine module with vertically arranged big chips |
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN103968287B (en) * | 2014-05-20 | 2017-02-15 | 贵州光浦森光电有限公司 | LED light machine module with vertically arranged big chips |
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