CN103985809B - Large chip for LED lighting - Google Patents
Large chip for LED lighting Download PDFInfo
- Publication number
- CN103985809B CN103985809B CN201410214077.9A CN201410214077A CN103985809B CN 103985809 B CN103985809 B CN 103985809B CN 201410214077 A CN201410214077 A CN 201410214077A CN 103985809 B CN103985809 B CN 103985809B
- Authority
- CN
- China
- Prior art keywords
- led
- chip
- voltage
- load
- light machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims description 60
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 238000003466 welding Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 15
- 239000011236 particulate material Substances 0.000 claims description 14
- 238000013461 design Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 238000013507 mapping Methods 0.000 claims description 8
- 230000011218 segmentation Effects 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 6
- 230000033228 biological regulation Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000008358 core component Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000012467 final product Substances 0.000 claims description 3
- 239000012634 fragment Substances 0.000 claims description 3
- 239000012943 hotmelt Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000002688 persistence Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000002493 microarray Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 230000003245 working effect Effects 0.000 description 11
- 239000000047 product Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 210000003462 vein Anatomy 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000035800 maturation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
- H05B47/10—Controlling the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a large chip for LED lighting. The large chip comprises a first transparent substrate (421) with a fixed width W, N+1 parallel interface wires are arranged on the first transparent substrate (421), LED chip series connection sets formed by N LED chips (41) are arranged on the first transparent substrate (421), each LED chip (41) is located between two adjacent interface wires, the distance between the two adjacent interface wires is WJG, wherein the WJG=(W-the with of the interface wire)/N, and the positive pole and the negative pole of each LED chip (41) are respectively connected to the two adjacent interface wires. Meanwhile, the multiple LED series connection sets are in series connection, so that an N-column and multi-row LED chip array capable of extending in the length direction of the first transparent substrate (421) is formed in the first transparent substrate (421), wherein N is an integer ranging from 3 to 7.
Description
Technical field
The present invention relates to a kind of LED illumination large chip, belongs to technical field of LED illumination.
Background technology
Application number 201310140124.5,201310140138.7,201310140150.8,201310140105.2,
201310140134.9, the Chinese patent applications such as 201310140106.7,201310140151.2,201310140136.8 disclose
Multiple ray machine module technical schemes that can be used in LED bulb that is general and exchanging.These technologies are foundation with LED bulb
Centered on Lighting Industry framework, make LED bulb (lighting source), light fixture, Lighting control become independent production, application terminal
The basic concept of product is laid a good foundation.But above-mentioned patent not yet solves the problems, such as the built-in driving power supply of ray machine module.
Existing LED drive power mostly is Switching Power Supply, and volume is too big；Also there is the slightly smaller linear power supply of volume, but it drives
Dynamic chip is more to coordinate again auxiliary element with DIP dual-in-lines or SMD pasters encapsulation pattern, and its volume is still not enough to little to can put
Put ray machine module internal.
LED illumination provides LED chip and starts to illuminating lamp to need a series of such as pasters of Jing, die bond, weldering from chip factory
Connect, encapsulate, color-division, design, heat dissipation design, the complexity such as Design of Luminaires and tediously long production design process being driven, due to depositing
In many uncertainties such as chip layout design, heat conductive design and power drives design, this industry centered on LED chip
Framework is difficult to realize that light source (bulb) is standardized under the pattern of replaceable light source that the LED ultimately resulted in terminal market is more
Based on the overall structure lamp of non-exchange light source, increased the industry complexity of illuminating product and reduce illuminating product
Industrial concentration.
Further creation idea is advanced, be more easy to the built-in driving power supply of standardized LED bulb light machine module and LED illumination core
Chip architecture scheme is of far-reaching significance for large-scale promotion LED illumination.
The Chinese patent applications such as Application No. 201310140106.7,201310140105.2,201310140134.9 are public
Multiple technical schemes that ray machine module can be made in epitaxial wafer are opened.Light machine template is existed as epitaxial wafer direct growth chip
Problem be, because light machine template has 7 specifications, there is the requirement of multiple power in each specification, the producer can face kind too
Many awkward problems less in batches；Secondly LED chip and interlock circuit occupied area are less relative to light machine template area, production
Cost can be in any more；It is that light machine template is thicker compared with substrate to have again, also relatively increases cost.
The content of the invention
It is an object of the present invention to provide a kind ofLED illuminates large chip.It may be conveniently used different capacity requirement
LED light machine module, the low production cost of the present invention, is easy to assembling, is conducive to the standardization of LED illumination, large-scale promotes.
Technical scheme：LED illumination large chip, is characterized in：The first transparent of W is fixed as including a width
Substrate, the first transparency carrier is provided with the parallel interface lead of N+1 bars, and the first transparency carrier is provided with N LEDs chip composition
LED chip series connection group, is respectively positioned between two adjacent interface leads, between two adjacent interface leads per LEDs chip
Away from for WJGSubtract interface lead width again divided by N (W equal to WJG=(W- interface lead width)/N), and it is equal per the both positive and negative polarity of LEDs chip
It is connected in two adjacent interface leads；And while multiple LED strip joint groups in parallel so that formed on the first transparency carrier
The LED chip array of the N row multirows that can extend on the first transparency carrier length direction, N is the integer between 3 to 7.
In above-mentioned LED illumination large chip, the formation of the LED chip array and interface lead on the first transparency carrier
Method is：The slim epitaxial wafer of transition epitaxial layer formation is done using transparent substrate, epitaxial wafer is using ripe chip fabrication techniques
Multi ANN circuit and LED chip, it is then cleaved to form the LED illumination large chip that width is W, wherein the circuit bag for growing
The wire of the connection chip of interface lead and connection LED chip and interface lead is included, transparency carrier is used as substrate；Described chip
Two poles can adopt transparency electrode, such as tin indium oxide (ITO), to increase the light-emitting area of chip due to welding；Described
Chip maturation manufacturing technology is to carry out covering silicon, gluing, photoetching, etching, plating using the layering of Metalorganic chemical vapor deposition equipment
The techniques such as film, alloy and abrasive disc；Or LED chip array is mounted on using conventional art produces the first saturating of silver paste circuit
On bright substrate, and it is connected with the silver paste circuit on the first transparency carrier by face-down bonding or the welding of spun gold formal dress, obtains LED and shine
Bright large chip, silver paste brush circuit includes the wire of the connection chip of interface lead and connection LED chip and interface lead.
The LED light machine module set up using aforesaid LED illumination large chip, it sets up by the following method：According to work(
Rate needs, and LED illumination large chip is cut out, and the LED illumination large chip for being cut into different length has different power,
Silver paste circuit is printed in light machine template, silver paste circuit also has interface lead in light machine template, and number and spacing are shone with LED
The interface lead of bright large chip is identical；The one side of LED illumination large chip microarray strip is attached to into light machine template with silver paste circuit
Face carries out butt welding, and both interface leads mutually correspond to welding；Simultaneously by one side of the LED drive power large chip with silver paste circuit
Being attached to one side of the light machine template with silver paste circuit carries out butt welding；So as to LED illumination large chip be connect with LED drive power large chip
It is logical；Finally encapsulate the gap around LED illumination large chip and driving power supply large chip with transparent adhesive tape.Described LED chip is carried
Voltage is about DC3.2V (suitably adjusting according to actual conditions) or the high voltage more than DC10V.
In aforesaid LED light machine module, the LED drive power large chip includes the second transparency carrier, the second transparent base
Plate is printed with silver paste circuit, interface lead is formed with silver paste circuit, interface lead has incoming end and output end；Incoming end
The width W of width and light machine template wire incoming endGIt is identical or have a pad being connected with connector；The interface lead number of output end
Mesh and spacing are identical with the interface lead of LED illumination large chip, and un-encapsulated power drives are first pasted on the second transparency carrier
Wafer stage chip and rectifier bridge wafer stage chip, then by un-encapsulated power drives wafer stage chip and rectifier bridge wafer scale
Chip is welded on the second transparency carrier；Rectifier bridge wafer stage chip can be merged in power drives wafer stage chip；Second
Transparency carrier has the width at interface lead end identical with the width W of LED illumination large chip, is highly H2.
In aforesaid LED light machine module, the LED driving methods on the LED light machine module are：Rectifier bridge wafer stage chip
On rectifier bridge civil power AC is converted into into Rectified alternating current, the voltage of Rectified alternating current is more than zero, less than or equal to Rectified alternating current
Specified maximum working voltage VWR, 3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded to be formed
LED load series block group, multiple LED load series block groups form described LED chip array, in the voltage liter of Rectified alternating current
Gao Shi, the hop count of power drives wafer stage chip control LED load series connection increases step by step, declines in the voltage of Rectified alternating current
When, the hop count for controlling LED load series connection reduces step by step, and the hop count of LED load series connection is that the LED for being actually connected into Rectified alternating current bears
Carry hop count.Civil power AC becomes Rectified alternating current, example after rectifier bridge：After the rectified bridge rectification of AC220V, 50Hz alternating current, electricity
Press as the wavy curve of half period (180 degree), cycle pulsating dc voltage at 0 degree is zero, the Rectified alternating current at 90 degree
Pressure reaches maximum VWRFor highest DC311V, during 180 degree, voltage is reduced to zero again, goes round and begins again.
In aforesaid LED light machine module, the hop count of the LED load series connection is controlled by switch, the control of switch
Node is the segmentation boundary of voltage, and the number of fragments of the voltage is corresponding with the hop count that LED load is connected；The LED load
The control method of the hop count of series connection is, by the negative pole direction of every section of LED load respectively by the negative of switch connection Rectified alternating current
Pole, then switches on-off to each according to the voltage change of Rectified alternating current and is controlled, using a few sections of switches are breaking
Mode realize LED load connect hop count change.LED load can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but electric current
Change greatly, easily produce low-order harmonic in electrical network；Segmentation is more, then circuit structure is complicated.Typically take 4～6 sections to be preferred.
In aforesaid LED light machine module, pulsating direct current operating voltage V of Rectified alternating current is setWMore than VWmaxPeriod,
Control is all to be switched off, and stops being powered to all LED loads, realizes overvoltage and surge protection to LED；By adjusting arteries and veins
Move galvanic maximum allowable pulsating dc voltage VWmaxSize, so as to realize that the luminosity of LED is adjusted.
In aforesaid LED light machine module, by arranging current sensor effective operating current I in circuit is measuredW, work as IWIt is super
Cross design load KIWRWhen, all switches are closed to realize current protection, switching on need to be extensive after voltage is reloaded next time
Multiple, wherein K is regulation coefficient, IWRFor specified effective operating current.
In aforesaid LED light machine module, described switch is in pulsating dc voltage ascent stage time delay tmMillisecond action,
The pulsating dc voltage decline stage shifts to an earlier date tmMillisecond action, to obtain relatively stable LED operation electric current.
In aforesaid LED light machine module, it is to carry with different maximums to arrange each section of LED load being cascaded
The LED chip group of magnitude of voltage, can make the LED load series block group worked under switch control rule obtain the work of close ideal sine wave
Make current curve.
In aforesaid LED light machine module, the method for adjustment of the maximum carrying voltage of each section of LED load is：1. with arteries and veins
Dynamic DC voltage is ordinate, the pulsating direct current cycle is abscissa mapping；2. a pure resistor load is assumed, its power is in pulsation
The sinusoidal graphics area that direct current half-wave is formed is 1, mapping；3. increase because LED voltage increases electric current, substantially power is damaged
It is bad.The load power of LED load series block group is set as the 120% of pure resistor load, makees the rectangle shade that an area is 1.2
Figure, the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group；4. in the same manner, it is known that LED load carries electricity
In the case of pressure, can map and draw the graphics area of LED load, paragraph by paragraph control of the area sum of checking LED load more than switch
Pulsating direct current sine wave area under node；5. the carrying magnitude of voltage of each section of LED load in LED load series block group, phase are chosen
Plus the maximum carrying magnitude of voltage total more than or equal to series block group；Wherein, the higher LED load of magnitude of voltage is carried near positive pole
End, carries the relatively low LED load of magnitude of voltage near negative pole end.
In aforesaid LED light machine module, the material of the light machine template is thin slice transparent non-metallic material (such as SiO2,
Al2O3Deng), it is that slim sheet material is warmed to into nearly material softening point, stamping forming using pressing equipment using mould.(material
It is brittle and hardness is higher.So can only cutting mode when being processed into light machine template shape, it is relatively costly.)
The method for setting up LED illumination core component using aforesaid LED light machine module：Arrange soft on LED light machine module
Load the inner cover with fluorescent material after property circuit；Inner cover with fluorescent material be by containing fluorescent material injection particulate material with do not contain it is glimmering
The transparent injected-moulded particulate material of light powder is mixed；Mixed proportion is configured as needed, is then obtained final product by injection mo(u)lding；It is wherein described to contain
The injection particulate material of fluorescent material is to mix 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate materials, after hot melt again
Make injection particulate material；Fluorescent material of the fluorescent material from persistence more than 8ms.
Compared with prior art, LED illumination large chip of the invention may be conveniently used the LED light of different capacity requirement
Machine module, it can be under the driving of power supply large chip, and LED illumination large chip is designed to fixed width W, length then basis
The specification of manufacturing equipment is divided into different length determining when using.So LED illumination large chip is not required to for single
LED chip will reduce the mechanical property to substrate and requires cutting into grade size, during chip manufacturing, make the height of similar polycrystalline
Pure alumina etc. is greatly reduced the manufacturing cost of LED illumination chip into the range of choice of substrate；In illumination large chip
Every LEDs chip the two poles of the earth without the need for welding, can do less of electrode while and the scheme of transparency electrode can be adopted, can effectively increase
Plus the light-emitting area of chip and raising luminous efficiency；From the beginning of chip factory, illumination large chip only need to be with reference to power supply large chip
Directly against welding equipment be connected in light machine template or bulb heat conduction support on, LED illumination production procedure is short and simple.Meanwhile, large chip
By being cut using power segmentation, the factor that design, production easily determine in product whole process is more, is easy to that it is controlled to come
Realize standardized work；Illumination large chip by being split using power can meet majority of illumination application requirement, so non-to cut
Illumination large chips cut, a limited number of easily realize the industrial concentration of height, and the manufacture of illuminating product will be greatly reduced
Cost；Change the existing encapsulation industrial concepts of LED, illumination large chip is using only needing simplified package large chip periphery i.e. after upside-down mounting
Can, or the patent barrier of foreign countries can have been got around using techniques such as cover plate encapsulation using during formal dress.
The ray machine module of the present invention goes for all kinds of bulb patents of the present inventor's earlier application, replacement bulb Central Plains
Some ray machine modules.The ray machine module of the present invention in structure can be with built-in power and LED illumination chip, and small volume, easily
In realization standardization.The present invention can change the existing industry structure centered on LED chip, the LED light machine mould of the present invention
Group can realize that light source (bulb) is standardized under the pattern of replaceable light source, and the industry such that it is able to reduce illuminating product is complicated
The industrial concentration of degree and raising illuminating product.
The LED large chips of the present invention can be directly driven using external driving power supply.
In addition, civil power is converted into Rectified alternating current by the present invention by rectifier bridge, while the voltage in each cycle is pressed
Phase division is multistage, and using the different characteristic of voltage in multistage, using switch to concatenating the LED load into working condition
Hop count is adjusted, so that LED load enters the operational mode of controlization, the operational mode can meet LED chip and power,
And this LED type of drive of the present invention can greatly reduce the complexity of LED drive power, so that LED light machine
The built-in driving power supply of module is possibly realized, and this versatility bigger for LED bulb realization and interchangeability are significant.
Description of the drawings
Fig. 1 is LED chip outward appearance front view of the present invention；
Fig. 2 is LED illumination large chip outside drawing of the present invention；
Fig. 3 is the LED illumination large chip outside drawing that the present invention welds knot using spun gold；
Fig. 4 is the large-scale light machine template that the present invention is printed with silver paste circuit；
Fig. 5 is the large-scale ray machine module of the non-sealing of the present invention；
Fig. 6 is the large-scale ray machine module of sealing of the invention；
Fig. 7 is the structural representation of the ray machine core component of the embodiment of the present invention；
Fig. 8 is the high-power LED driving power source large chip front view of the embodiment of the present invention；
Fig. 9 is the LED voltage current waveform figure of the embodiment of the present invention；
Figure 10 runs power waveform figure for the extra-high pressure of the embodiment of the present invention；
The light modulation operation power waveform figure of Figure 11 embodiment of the present invention；
The circuit connection diagram of Figure 12 embodiment of the present invention；
The driving power supply chip internal circuits figure of Figure 13 embodiment of the present invention；
The LED voltage current waveform figure of 3 sections of loads of Figure 14 embodiment of the present invention；
Figure 15：The LED chip array module power loading distribution map of embodiment of the present invention DC52V series connection；
Figure 16：Embodiment of the present invention LED chip array carries voltage tentative calculation figure；
Figure 17：Single DC52V chip bearing power tentative calculation figure of the embodiment of the present invention；
Figure 18：The LED chip array module power loading distribution map of embodiment of the present invention 2*52V+4*35V series connection；
Figure 19 is the low-power LED driving power supply large chip front view of the embodiment of the present invention.
Mark in accompanying drawing for：41-LED chips, 41.1-P poles, 41.2-N poles, 41.3- metal electrodes, 41.4- partly leads
Body, 42- transparent cover plates, 43- light machine templates, 43.1- ray machine module fixing holes, 44- flexibility built-up circuits, 44.1- solder joints, 45-
Transparent sealing, inner covers of the 61- with fluorescent material, 414- silver paste printed circuits, 417- welding gold threads, the big core of 410-LED driving power supplies
Piece, 411-LED power drives wafer stage chips, 412- rectifier bridge wafer stage chips, the transparency carriers of 413- second, 414- silver pastes electricity
Road, 414.1- pads, 416- resistance, 420-LED illumination large chips, the transparency carriers of 421- first.
Specific embodiment
With reference to the accompanying drawings and examples the present invention is further illustrated, but be not intended as to the present invention limit according to
According to.
Embodiment.LED illumination large chip, as shown in Figures 1 to 3：First transparency carrier of W is fixed as including a width
421, the first transparency carrier 421 is provided with the parallel interface lead of N+1 bars, and the first transparency carrier 421 is provided with N LEDs chips
41 constitute LED chip series connection group, are respectively positioned between two adjacent interface leads per LEDs chip 41, two adjacent interfaces
The spacing of wire is WJGSubtract interface lead width again divided by N (W equal to WJG=(W- interface lead width)/N), and per LEDs chip 41
Both positive and negative polarity be respectively connected in two adjacent interface leads；And while multiple LED strip joint groups in parallel so that first is transparent
The LED chip array of the N row multirows that can extend on the length direction of the first transparency carrier 421 is formed on substrate 421, N is 3 to 7
Between integer.
The forming method of the LED chip array and interface lead on the first transparency carrier 421 is：Using transparent lining
The slim epitaxial wafer of transition epitaxial layer formation is done at bottom, and epitaxial wafer is using ripe chip fabrication techniques multi ANN circuit and LED core
Piece, it is then cleaved to form the LED illumination large chip that width is W, wherein the circuit for growing includes interface lead and connection LED
The wire of the connection chip of chip and interface lead, transparency carrier is used as substrate；The described pole of chip two due to welding,
Transparency electrode, such as tin indium oxide (ITO), to increase the light-emitting area of chip can be adopted；Described chip maturation manufacturing technology is,
Carry out covering the works such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc using the layering of Metalorganic chemical vapor deposition equipment
Skill；Or be mounted on LED chip array using conventional art on the first transparency carrier 421 for producing silver paste circuit 414, and
It is connected with the silver paste circuit 414 on the first transparency carrier 421 by face-down bonding or the welding of spun gold formal dress, obtains LED illumination big
Chip, silver paste brush circuit 414 includes the wire of the connection chip of interface lead and connection LED chip and interface lead.
The LED light machine module set up using aforesaid LED illumination large chip, as shown in Figs. 4-6, it is by the following method
Set up：According to power needs, LED illumination large chip 420 is cut out, is cut into the LED illumination large chip of different length
420 have different power, and silver paste circuit 414 is printed in light machine template 43, and silver paste circuit 414 also has in light machine template 43
Interface lead, and number and spacing are identical with the interface lead of LED illumination large chip 420；By the band of LED illumination large chip 420
Chip be attached to light machine template 43 with silver paste circuit 414 while carry out butt welding, both interface leads mutually correspond to weldering
Connect；Simultaneously one side of the LED drive power large chip 410 with silver paste circuit is attached to into light machine template 43 with silver paste circuit 414
Face carries out butt welding；So as to LED illumination large chip 420 be connected with LED drive power large chip 410；Finally encapsulated with transparent adhesive tape
Gap around LED illumination large chip and driving power supply large chip.Described LED chip carries voltage for～DC3.2V or is more than
The high voltage of DC10V.
The LED drive power large chip 410, as shown in Fig. 8 and Figure 19, including the second transparency carrier 413, second is transparent
Substrate 413 is printed with silver paste circuit, and interface lead is formed with silver paste circuit, and interface lead has incoming end and output end；Access
The width at end and the width W of the wire incoming end of light machine template 43GIt is identical or have a pad being connected with connector；The interface of output end
Wire count and spacing are identical with the interface lead of LED illumination large chip 420, first paste without envelope on the second transparency carrier 413
The power drives wafer stage chip 411 and rectifier bridge wafer stage chip 412 of dress, then by un-encapsulated power drives wafer scale
Chip 411 and rectifier bridge wafer stage chip 412 are welded on the second transparency carrier 413；Can be by rectifier bridge wafer stage chip (412)
It is merged in power drives wafer stage chip (411)；Second transparency carrier 413 has the width at interface lead end big with LED illumination
The width W of chip is identical, is highly H2.
LED driving methods on the LED light machine module are：Rectifier bridge on rectifier bridge wafer stage chip 412 is by civil power
AC is converted into Rectified alternating current, and the voltage of Rectified alternating current is more than zero, less than or equal to the specified maximum working voltage of Rectified alternating current
VWR, 3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded to form LED load series block group,
Multiple LED load series block groups form described LED chip array, and when the voltage of Rectified alternating current is raised, power drives are brilliant
Circle level chip 411 controls the hop count of LED load series connection to be increased step by step, when the voltage of Rectified alternating current declines, controls LED load
The hop count of series connection reduces step by step, and the hop count of LED load series connection is the LED load hop count for being actually connected into Rectified alternating current.
The hop count of the LED load series connection is controlled by switch, and the control node of switch is the segmentation boundary of voltage,
The hop count that the number of fragments of the voltage is connected with LED load is corresponding；The control method of the hop count of the LED load series connection
It is, by the negative pole direction of every section of LED load respectively by the negative pole of switch connection Rectified alternating current, then according to Rectified alternating current
Voltage change each switched on-off be controlled, realize that LED load is connected using by the modes of a few sections of switch open circuits
Hop count change.
Pulsating direct current operating voltage V of setting Rectified alternating currentWMore than VWmaxPeriod, control it is all switches off, stop
Power to all LED loads, realize the overvoltage and surge protection to LED；By the maximum allowable arteries and veins for adjusting Rectified alternating current
Dynamic DC voltage VWmaxSize, so as to realize that the luminosity of LED is adjusted.
Effective operating current I in circuit is measured by arranging current sensorW, work as IWMore than design load KIWRWhen, close institute
Have switch to realize current protection, switching on need to recover after voltage is reloaded next time, wherein K be regulation coefficient, IWR
For specified effective operating current.
Described switch is in pulsating dc voltage ascent stage time delay tmMillisecond action, in the pulsating dc voltage decline stage
T in advancemMillisecond action, to obtain relatively stable LED operation electric current.
The each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can
The LED load series block group worked under switch control rule is set to obtain the operating current curve of close ideal sine wave.
The method of adjustment that each section of LED load be maximum to carry voltage is：1. with pulsating dc voltage as ordinate, arteries and veins
The dynamic direct current cycle is abscissa mapping；2. increase because LED voltage increases electric current, substantially power is damaged.It is assumed that one pure
Ohmic load, its power is 1 in the sinusoidal graphics area that pulsating direct current half-wave is formed, mapping；3. LED load series block group is set
Load power be the 120% of pure resistor load, make the rectangle echo that an area is 1.2, the ordinate value of rectangle shade is
For the total maximum carrying magnitude of voltage of series block group；4. in the same manner, it is known that LED load is carried under voltage condition, can map and show that LED bears
The graphics area of load, paragraph by paragraph the area sum of checking LED load is more than the pulsating direct current sine corrugated under the control node of switch
Product；5. the carrying magnitude of voltage of each section of LED load in LED load series block group is chosen, is added total most more than or equal to series block group
It is big to carry magnitude of voltage；Wherein, the higher LED load of magnitude of voltage is carried near positive terminal, carry the relatively low LED of magnitude of voltage and bear
Carry near negative pole end.
The material of the light machine template 43 be thin slice transparent non-metallic material, such as SiO2, Al2O3Deng it is by slim sheet material
Nearly material softening point is warmed to, it is stamping forming using pressing equipment using mould.Because material is brittle and hardness is higher, therefore
Can only cutting mode when being processed into light machine template shape, it is relatively costly.
The method for setting up LED illumination core component using aforesaid LED light machine module, as shown in fig. 7, in LED light machine mould
Arrange in group after flexible circuit 44 and load the inner cover 61 with fluorescent material；Inner cover 61 with fluorescent material is by the note containing fluorescent material
Modeling particulate material is mixed with the transparent injected-moulded particulate material without fluorescent material；Mixed proportion is configured as needed, then by being molded into
Type is obtained final product；The wherein described injection particulate material containing fluorescent material is by 20～30% fluorescent powders and 70～80% transparent injected-moulded particles
Material is mixed, and makes injection particulate material after hot melt again；Fluorescent material of the fluorescent material from persistence more than 8ms.
It is hereafter the operation principle of the invention by taking 6 groups of LED loads as an example.I.e. n values are 6.
First, alternating current AC becomes Rectified alternating current, example after rectifier bridge：The rectified bridge of AC220V, 50Hz alternating current
After rectification, referring to Fig. 9, voltage is the wavy curve of half period (180 degree), and cycle pulsating dc voltage at 0 degree is zero,
Pulsating dc voltage reaches maximum V when 90 degreeWRFor highest DC311V, during 180 degree, voltage is reduced to zero again, goes round and begins again.
The job requirement of the present invention, in pulsating dc voltage more than zero and less than or equal to VWRBetween, 6 sections of loads are set altogether,
Each section load between form series system, with voltage raise, load (i.e. LED load) series connection hop count increase step by step, load voltage by
Switch control rule is loaded, and referring to Fig. 9 and Figure 12, voltage switch node is that voltage is segmented boundary.
Power supply management operational mode：Not design current control device of the invention, the keying of switches at different levels is only dependent upon VW's
Change, referring to Fig. 9, Figure 12 and Figure 13.
During 0～90 degree of cycle：
1st section：Work original state, the i.e. cycle is initial from 0, and circuit breaker in middle K1～K6 is in opening (ON), electricity
Flow main warp knuckle point J1 and path is formed by switch K1, it is 1V to load by rated voltageWRThe LED compositions of/6 tandem workings；
2nd section：Work as VWMore than or equal to 1VWRWhen/6, switch K1 closes (OFF), and the main warp knuckle point J2 of electric current is by switching K2
Path is formed, it is 2V to load by rated voltageWRThe LED compositions of/6 tandem workings；
3rd section：Work as VWMore than or equal to 2VWRWhen/6, switch K1 is in OFF, and switch K2 closes (OFF), the main warp knuckle of electric current
Point J3 forms path by switch K3, and it is 3V to load by rated voltageWRThe LED compositions of/6 tandem workings；
4th section：Work as VWMore than or equal to 3VWRWhen/6, switch K1～K2 is in OFF, and switch K3 closes (OFF), and electric current is main
Warp knuckle point J4 forms path by switch K4, and it is 4V to load by rated voltageWRThe LED compositions of/6 tandem workings；
5th section：Work as VWMore than or equal to 4VWRWhen/6, switch K1～K3 is in OFF, and switch K4 closes (OFF), and electric current is main
Warp knuckle point J5 forms path by switch K5, and it is 5V to load by rated voltageWRThe LED compositions of/6 tandem workings；
6th section：Work as VWMore than or equal to 5VWRWhen/6, switch K1～K4 is in OFF, and switch K5 closes (OFF), electric current warp knuckle
Point J6 forms path by switch K6, and it is 6V to load by rated voltageWRThe LED compositions of/6 tandem workings；
When switch K1～K6 is closed, the method for closing of time delay 0.1ms can be adopted, relatively stable electric current can be obtained.
During 90～180 degree of cycle：
6th section：Work original state, voltage is reduced downwards by maximum, and circuit breaker in middle K1～K5 is closed
(OFF), switch K6 and be in opening, electric current warp knuckle point J6 forms path by switch K6, it is 6V to load by rated voltageWR/6
The LED compositions of tandem working；
5th section：Work as VWLess than or equal to 5VWRWhen/6, switch K5～K6 opens (ON), and the main warp knuckle point J5 of electric current is by switch
K5 forms path, and it is 5V to load by rated voltageWRThe LED compositions of/6 tandem workings；
4th section：Work as VWLess than or equal to 4VWRWhen/6, switch K4～K6 opens (ON), and the main warp knuckle point J4 of electric current is by switch
K4 forms path, and it is 4V to load by rated voltageWRThe LED compositions of/6 tandem workings；
3rd section：Work as VWLess than or equal to 3VWRWhen/6, switch K3～K6 opens (ON), and the main warp knuckle point J3 of electric current is by switch
K3 forms path, and it is 3V to load by rated voltageWRThe LED compositions of/6 tandem workings；
2nd section：Work as VWLess than or equal to 2VWRWhen/6, switch K2～K6 opens (ON), and the main warp knuckle point J2 of electric current is by switch
K2 forms path, and it is 2V to load by rated voltageWRThe LED compositions of/6 tandem workings；
1st section：Work as VWLess than or equal to 1VWRWhen/6, switch K1～K6 opens (ON), and the main warp knuckle point J1 of electric current is by switch
K1 forms path, and it is 1V to load by rated voltageWRThe LED compositions of/6 tandem workings.
When switch K1～K6 is opened, the open method of 0.1ms in advance can be adopted, relatively stable electric current can be obtained.
Light modulation operational mode：When outside arranges a given voltage VT=0, VWmaxCorrespondence CVWR, external voltage gives VT=5V
When, VWmaxCorrespondence 0V, arranges 0≤VWmax≤CVWR, C regulation coefficients are the multiple of rated voltage, such as C=1.12.VWMore than VWmax
Period, correspondence each section switch will close (OFF), stop powering to the load.It act as a kind of dimming arrangement.Referring to figure
11st, Figure 12 and Figure 13, adjusts VWmaxLess than VWR, dash area will increase in figure, be input to the power of load and will reduce, so as to reach
To the purpose of light modulation.Example：When LED is in AC220V civil power normal works, when adjusting the voltage of alternating current voltage to AC180V, figure
In dash area be VWFormation power projection figure part higher than 254V, from about 55.5 degree to 124.5 degree of cycle, due to
, in (OFF) is closed, the power consumption of dash area is (equivalent to pulsating direct current under normal civil power half for corresponding switch Kx in this time
Ripple loading power 57.0%) will be disallowable, this part power consumption be not loaded into load on, make the luminance-reduction of load.When
VWmaxDuring equal to 0, all switches will close (OFF), and load supplying amount is zero.Stepless dimming can be accomplished, without there is energy
Amount is consumed.
Voltage protection operational mode：V is setWmax=CVWR。VWMore than VWmaxPeriod, correspondence each section switch will close
(OFF), stop powering to the load.Referring to Figure 10, Figure 12 and Figure 13, example：When civil power reaches the high voltage of 270V, the moon in figure
Shadow part is VWFormation power echo part higher than 348V, from about 66 degree to 114 degree of cycle, due in this time
, in (OFF) is closed, the power consumption of dash area is (equivalent to the loading power of pulsating direct current half-wave under normal civil power for K1～K6 switches
50.2%) will be disallowable, this part power consumption be not loaded into load on, load is not burnt because of overvoltage.；Electrical network occurs
When surging, it may occur that instantaneous peak voltage is much higher than VWmax, this moment each section of switch be closed, realize
Surge the purpose of protection.
Overcurrent protection operational mode：The present invention has overcurrent protection, and referring to Figure 13, current sensor is measured in circuit effectively
Operating current IWMore than design load KIWR, K is regulation coefficient, example：Setting IWR=275mA, K=1.2, logic switch controller will
All switches K1～K6 (OFF) are closed, opening switch (ON) K1～K6 need to recover after power supply pressure is reloaded next time.
According to principle same as described above, mode of loading can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change
It is larger, easily low-order harmonic is produced in electrical network, referring to Figure 14；Segmentation is more, then circuit structure is complicated.Typically take 4～6 sections to be preferred.
Note：VW- pulsating direct current operating voltage (1.4142* alternating voltages)；VWRThe specified maximum working voltage of-pulsating direct current
(1.4142* alternating voltages)；VWmax- maximum allowable pulsating dc voltage (1.4142* alternating voltages)；IW- effectively work is electric
Stream.IWR- specified effective operating current.
If civil power is AC220, the voltage after rectification is DC311V, so that every group of LED load is as single chip as an example, then per
Chip bears DC52V；Such as AC110, then chip bears DC26V.If the loading power area of pulsating direct current half-wave is 1, referring to figure
15, each LED load (LED modules 1 to 6) is loaded power difference than larger in figure, and LED modules 1 reach pulsating direct current half-wave
Loading power area 20.68% (for chip nominal output 84.4%)；And LED modules 6 only 5.11% (are chip volume
Make power 19.2%), the about a quarter power of module 1, through actual measurement checking, the intrinsic brilliance of module 6 is very low；Entirely
The power being averagely loaded of chipset is the 52.4% of chip nominal output, and the utilization rate of chip is relatively low；And the volume of chipset
Make power (dotted line frame area) and load the 159% of power area for pulsating direct current half-wave.Due to chip redundancy amount it is excessive, not only
Chip is wasted, and also results in that driving power supply is excessive and wastes, while increased the difficulty on arranging.Therefore, under Constant Direct Current state
There are some problems in the method for selecting chip voltage, under pulsating direct current state how in the premise for ensureing chip secure work
Under, improving the utilization rate of chip becomes a problem to be solved.
The nominal output of the LED chip array of 6 series connection of setting is turned down by 1.59 times of pulsating direct current half-wave loading power
(increase because LED voltage increases electric current, substantially power is damaged to 1.2 times.1.2 times of power headroom are set and ensure LED enough
It is not burned out), referring to Figure 16, if LED chip array chip bearing power (rectangle hatched area in figure) is pulsating direct current
When half-wave loads 1.2 times of power (pulsating direct current half-wave part area), civil power can be extrapolated for AC220V by Figure 16 mappings
When chip array carrying voltage be DC236V；
Referring to Figure 17, different magnitudes of voltage are respectively provided with to module 6 to LED modules 1, different bearer magnitude of voltage can be obtained
Under chip loading power area (dash area in figure)；
Using 2*52V+4*35V high voltage chips, (model VES-AADBHV45 of module 1 and module 2, module 3 arrive mould
Group 6 is ES-AADBHF40) composition serial array, then the carrying Voltage Cortrol of chip array is DC244V；Make Figure 18, acquisition
Chip array is loaded 96.67% that power area is pulsating direct current half-wave power area, and the power that chip array is loaded connects
Nearly 1 is perfect condition；The power that now LED chip array is loaded is chip array nominal output 77.6%；Experimental verification with
Estimated value is close.
The module loading power checking of each voltage section：If the loading power area of pulsating direct current half-wave is 1, voltage is vertical seat
Timestamp, it is 26.52% to calculate DC52V chips nominal output easily by Figure 17, and in the same manner, the nominal output of DC35V chips is
17.89%；Figure 18 be then civil power be AC220V when, the power situation being loaded of each module of LED chip array；Table 1 is chip
When the power that array is loaded is pulsating direct current half-wave power area 1, line voltage is respectively AC220V, AV246V, AC270V
Each module is loaded the situation of power, as can be seen that only module 3 slightly transships in DC311V and DC348V in table, but due to
Module 1 and module 2 have margin of power, and experiment proves that module 3 can pass through.
In other line voltage grades, optimal way is carried out with reference to above-mentioned.
Ideally the checking computations of chip bearing power are as shown in the table：
Claims (12)
1. the LED light machine module set up using LED illumination large chip, it is characterised in that it sets up by the following method：According to
Power needs, and LED illumination large chip (420) is cut out, and the LED illumination large chip (420) for being cut into different length has
Different power, prints silver paste circuit (414) in light machine template (43), and silver paste circuit (414) also has in light machine template (43)
There is interface lead, and number and spacing are identical with the interface lead of LED illumination large chip (420)；By LED illumination large chip
(420) microarray strip be attached to light machine template (43) with silver paste circuit (414) while carry out butt welding, both interface leads
Mutually correspondence welding；Simultaneously one side of the LED drive power large chip (410) with silver paste circuit (414) is attached to into light machine template
(43) one side with silver paste circuit (414) carries out butt welding；So as to by LED illumination large chip (420) and LED drive power large chip
(410) connect；Finally encapsulate the gap around LED illumination large chip and driving power supply large chip with transparent adhesive tape；Described LED core
It is DC3.2V or the high voltage more than DC10V that piece carries voltage；
Wherein, LED illumination large chip (420) is fixed as first transparency carrier (421) of W, the first transparent base including a width
Plate (421) is provided with the parallel interface lead of N+1 bars, and the first transparency carrier (421) is provided with plurality of LEDs chip (41) composition
LED chip series connection group, is respectively positioned between two adjacent interface leads, two adjacent interface leads per LEDs chip (41)
Spacing be WJGSubtract interface lead width again divided by N equal to W, and the both positive and negative polarity per LEDs chip (41) is respectively connected to two
In adjacent interface lead；And while multiple LED strip joint groups in parallel so that being formed on the first transparency carrier (421) can be first
The LED chip array of the N row multirows extended on transparency carrier (421) length direction, N is the integer between 3 to 7.
2. LED light machine module according to claim 1, it is characterised in that：The LED chip array and interface lead are
Forming method on one transparency carrier (421) is：The slim epitaxial wafer of transition epitaxial layer formation, extension are done using transparent substrate
, using ripe chip fabrication techniques multi ANN circuit and LED chip, then cleaved formation width is big for the LED illumination of W for piece
Chip, wherein the circuit for growing includes interface lead and the wire for connecting LED chip and interface lead, transparency carrier is made
For substrate；The described pole of chip two due to welding, using transparency electrode, to increase the light-emitting area of chip；Described
Ripe chip fabrication techniques are to carry out covering silicon, gluing, photoetching, etching, plating using the layering of Metalorganic chemical vapor deposition equipment
Film, alloy and abrasive disc technique；Or LED chip array is mounted on using conventional art produces the of silver paste circuit (414)
On one transparency carrier (421), and by face-down bonding or the welding of spun gold formal dress and the silver paste circuit on the first transparency carrier (421)
(414) connect, obtain LED illumination large chip, silver paste circuit (414) includes interface lead and connection LED chip and interface lead
Wire.
3. LED light machine module according to claim 1, it is characterised in that：LED drive power large chip (410) bag
The second transparency carrier (413) is included, the second transparency carrier (413) is printed with silver paste circuit (414), formed on silver paste circuit (414)
There is interface lead, interface lead has incoming end and output end；The width of incoming end and the width of light machine template (43) wire incoming end
Degree WGIt is identical or have a pad being connected with connector；The interface lead number of output end and spacing and LED illumination large chip (420)
Interface lead it is identical, un-encapsulated power drives wafer stage chip (411) and whole is first pasted on the second transparency carrier (413)
Stream bridge wafer stage chip (412), then by un-encapsulated power drives wafer stage chip (411) and rectifier bridge wafer stage chip
(412) it is welded on the second transparency carrier (413)；Rectifier bridge wafer stage chip (412) can be merged in power drives wafer scale
In chip (411)；Second transparency carrier (413) has the width at interface lead end identical with the width W of LED illumination large chip, high
Spend for H2.
4. LED light machine module according to claim 3, it is characterised in that the LED driving sides on the LED light machine module
Method is：Civil power AC is converted into Rectified alternating current, the voltage of Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip (412)
More than zero, maximum working voltage VWR specified less than or equal to Rectified alternating current arranges 3～7 sections of LED loads on Rectified alternating current,
Each section of LED load is cascaded to form LED load series block group, and multiple LED load series block groups form described LED chip
Array, Rectified alternating current voltage raise when, power drives wafer stage chip (411) control LED load series connection hop count by
Level increases, and when the voltage of Rectified alternating current declines, the hop count for controlling LED load series connection reduces step by step, the section of LED load series connection
Number is the LED load hop count for being actually connected into Rectified alternating current.
5. LED light machine module according to claim 4, it is characterised in that：The hop count of the LED load series connection is by switch
Be controlled, the control node of switch for voltage segmentation boundary, the hop count that the number of fragments of the voltage is connected with LED load
It is corresponding；The control method of the hop count of the LED load series connection is, by the negative pole direction of every section of LED load respectively by switch
The negative pole of connection Rectified alternating current, then switches on-off to each according to the voltage change of Rectified alternating current and is controlled, and makes
With the change that the mode of a few sections of switch open circuits is realized the hop count that LED load is connected.
6. LED light machine module according to claim 5, it is characterised in that：The pulsating direct current work of setting Rectified alternating current
Voltage VWMore than VWmaxPeriod, control it is all switches off, stop being powered to all LED loads, realize overvoltage to LED
And surge protection；By the maximum allowable pulsating dc voltage V for adjusting Rectified alternating currentWmaxSize, so as to realize to LED's
Luminosity is adjusted.
7. LED light machine module according to claim 5, it is characterised in that：Measured in circuit by arranging current sensor
Effectively operating current IW, work as IWMore than design load KIWRWhen, all switches are closed realizing current protection, switching on need to be
Reload next time after voltage recover, wherein K be regulation coefficient, IWRFor specified effective operating current.
8. LED light machine module according to claim 5, it is characterised in that：Described switch rises in pulsating dc voltage
Stage time delay tmMillisecond action, in the pulsating dc voltage decline stage t is shifted to an earlier datemMillisecond action, to obtain relatively stable LED
Operating current.
9. LED light machine module according to claim 4, it is characterised in that：The each section of LED load that setting is cascaded
It is, with the different maximum LED chip groups for carrying magnitude of voltage, to obtain can the LED load series block group that worked under switch control rule
Obtain the operating current curve of close ideal sine wave.
10. LED light machine module according to claim 9, it is characterised in that each section of LED load is maximum to carry electricity
The method of adjustment of pressure is：1. with pulsating dc voltage as ordinate, the pulsating direct current cycle be abscissa mapping；2. hypothesis one is pure
Ohmic load, its power is 1 in the sinusoidal graphics area that pulsating direct current half-wave is formed, mapping；3. LED load series block group is set
Load power be the 120% of pure resistor load, make the rectangle echo that an area is 1.2, the ordinate value of rectangle shade is
For the total maximum carrying magnitude of voltage of series block group；4. in the same manner, it is known that LED load is carried under voltage condition, mapping draws LED load
Graphics area, paragraph by paragraph the area sum of checking LED load is more than the pulsating direct current sine wave area under the control node of switch；
5. the carrying magnitude of voltage of each section of LED load in LED load series block group is chosen, the maximum total more than or equal to series block group is added and is held
Carry magnitude of voltage；Wherein, the higher LED load of magnitude of voltage is carried near positive terminal, carry the relatively low LED load of magnitude of voltage and lean on
Nearly negative pole end.
11. LED light machine modules according to claim 1, it is characterised in that：The material of the light machine template (43) is thin slice
Transparent non-metallic material, it is that slim sheet material is warmed to into nearly material softening point, and using mould pressing equipment punch forming is adopted
's.
12. usage rights require that the LED light machine module described in 1 to 11 any claim sets up the side of LED illumination core component
Method：Flexible circuit (44) is set on LED light machine module and loads the inner cover with fluorescent material (61) afterwards；Inner cover with fluorescent material
(61) it is to mix the injection particulate material containing fluorescent material with the transparent injected-moulded particulate material without fluorescent material；Mixed proportion is as needed
Configuration, is then obtained final product by injection mo(u)lding；The wherein described injection particulate material containing fluorescent material is by mass percent 20～30%
Fluorescent powder is mixed with the transparent injected-moulded particulate material of mass percent 70～80%, makes injection particulate material after hot melt again；Fluorescence
Fluorescent material of the powder from persistence more than 8ms.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410214077.9A CN103985809B (en) | 2014-05-20 | 2014-05-20 | Large chip for LED lighting |
| PCT/CN2015/079152 WO2015176626A1 (en) | 2014-05-20 | 2015-05-18 | Led large chip and optical machine module group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410214077.9A CN103985809B (en) | 2014-05-20 | 2014-05-20 | Large chip for LED lighting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103985809A CN103985809A (en) | 2014-08-13 |
| CN103985809B true CN103985809B (en) | 2017-05-10 |
Family
ID=51277706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410214077.9A Active CN103985809B (en) | 2014-05-20 | 2014-05-20 | Large chip for LED lighting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103985809B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN105627125A (en) * | 2016-03-11 | 2016-06-01 | 贵州光浦森光电有限公司 | Large-chip LED lamp filament and large-chip LED lamp filament bulb |
| CN105627124B (en) * | 2016-03-11 | 2019-07-30 | 贵州光浦森光电有限公司 | A kind of LED filament component, the method and LED filament light bulb for setting up LED filament light bulb |
| EP3978797A4 (en) * | 2020-08-21 | 2022-06-08 | Ko, Yin-Hu | Led light-emitting source device and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101652861A (en) * | 2007-01-22 | 2010-02-17 | 科锐Led照明科技公司 | The method of fault tolerant light emitters, the system that comprises fault tolerant light emitters and manufacturing fault tolerant light emitters |
| CN203179891U (en) * | 2013-04-22 | 2013-09-04 | 贵州光浦森光电有限公司 | LED bulb optical module employing transparent substrate |
| CN203812914U (en) * | 2014-05-20 | 2014-09-03 | 贵州光浦森光电有限公司 | LED illumination large chip |
-
2014
- 2014-05-20 CN CN201410214077.9A patent/CN103985809B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101652861A (en) * | 2007-01-22 | 2010-02-17 | 科锐Led照明科技公司 | The method of fault tolerant light emitters, the system that comprises fault tolerant light emitters and manufacturing fault tolerant light emitters |
| CN203179891U (en) * | 2013-04-22 | 2013-09-04 | 贵州光浦森光电有限公司 | LED bulb optical module employing transparent substrate |
| CN203812914U (en) * | 2014-05-20 | 2014-09-03 | 贵州光浦森光电有限公司 | LED illumination large chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103985809A (en) | 2014-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103953902B (en) | LED drive power large chip | |
| CN103985809B (en) | Large chip for LED lighting | |
| CN100523587C (en) | Radiating control emergency lighting integrated thick-film packaged LED lighting lamp tube | |
| CN103957649B (en) | LED driving methods and LED illumination circuit | |
| CN101668373A (en) | LED light source driving circuit supplied by AC power | |
| CN105072776B (en) | Integrated COB light source containing power drives | |
| CN201509344U (en) | Drive circuit of LED light source of alternating-current power supply | |
| CN203812914U (en) | LED illumination large chip | |
| CN103968286B (en) | The LED light machine module that large chip is horizontally disposed | |
| CN203810157U (en) | LED-light machine module with perpendicularly arranged large chips | |
| CN203810156U (en) | LED light machine module with horizontally arranged large chips | |
| CN203836904U (en) | LED light machine module | |
| CN204062538U (en) | With the LED light thermomechanical components of radiator | |
| CN203810334U (en) | Large chip for LED (light emitting diode) driving power supply | |
| CN103953901B (en) | Arrangement method of large chip on uninsulated heat conducting base plate | |
| CN103968287B (en) | LED light machine module with vertically arranged big chips | |
| CN204268108U (en) | The LED light machine module of nonisulated heat-conducting substrate formula | |
| CN103968342B (en) | LED ray machine module | |
| CN205960029U (en) | COB light source and collection moulding piece and lamps and lanterns | |
| CN205648129U (en) | LED electricity light source device based on best light efficiency and life | |
| CN2852395Y (en) | Red, green, blue chips integrated silicon chip | |
| CN208094852U (en) | A kind of highly integrated LED driving encapsulation | |
| WO2015176626A1 (en) | Led large chip and optical machine module group | |
| CN208620092U (en) | A kind of steady type luminous lamp strip | |
| CN205859624U (en) | Photo engine LED filament |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |