WO2015176626A1

WO2015176626A1 - Led large chip and optical machine module group

Info

Publication number: WO2015176626A1
Application number: PCT/CN2015/079152
Authority: WO
Inventors: 张继强; 张哲源; 朱晓冬
Original assignee: 贵州光浦森光电有限公司
Priority date: 2014-05-20
Filing date: 2015-05-18
Publication date: 2015-11-26

Abstract

An LED lighting large chip, an LED driving power supply large chip and multiple types of optical machine module groups are disclosed in the present invention. The present invention makes it easier to standardize LED lighting, and is beneficial to standardization of LED lighting and large-scale extension in structure.

Description

LED chip and optomechanical module

Technical field

The invention relates to a LED lighting large chip, an LED driving power large chip and a light machine module, and belongs to the technical field of LED lighting.

Background technique

Chinese Patent Application No. 201310140124.5, 201310140138.7, 201310140150.8, 201310140105.2, 201310140134.9, 201310140106.7, 201310140151.2, 201310140136.8, etc. disclose a plurality of optical module technical solutions that can be used on general-purpose and interchangeable LED bulbs. These technologies have laid the foundation for the establishment of LED lighting-centered lighting industry architecture, which has made LED bulbs (lighting sources), lamps and lighting control the basic concept of independent production and application of end products. However, the above patent has not solved the problem of the built-in driving power of the optomechanical module.

The current LED driver power supply is mostly a switching power supply, which is too large; there is also a slightly smaller linear power supply, but its driver chip is mostly in DIP dual in-line or SMD chip package type and auxiliary components, and its volume is still insufficient. Small enough to fit inside the optomechanical module.

LED lighting from the chip factory to provide LED chips to the lighting needs a series of complex and lengthy production design processes such as patching, die bonding, soldering, packaging, spectral separation, drive design, thermal design, luminaire design, etc. There are many uncertainties such as chip layout design, thermal design and power drive design. This LED chip-centric industrial architecture is difficult to standardize the light source (light bulb) in the mode of replaceable light source, and ultimately leads to LED lights on the terminal market. Most of the overall structure lights with non-replaceable light sources are the mainstay, which increases the industrial complexity of lighting products and reduces the industrial concentration of lighting products.

Further creating an advanced and more standardized LED bulb optomechanical module with built-in driving power supply and LED lighting chip structure scheme has far-reaching significance for large-scale promotion of LED lighting.

Chinese Patent Application Nos. 201310140106.7, 201310140105.2, 201310140134.9 and the like disclose a plurality of technical solutions capable of fabricating a optomechanical module in an epitaxial wafer. The problem of using a optomechanical template as an epitaxial wafer to directly grow a chip is that there are seven specifications for the optomechanical template, and each specification has multiple power requirements. The producer will face too many varieties. The problem of the smaller amount of defects is that the area occupied by the LED chip and the related circuit is smaller than that of the template of the optical machine, and the production cost is high; and the template of the optical machine is thicker than the substrate, and the cost is relatively increased.

Summary of the invention

The object of the present invention is to provide a LE D lighting large chip, an LED driving power large chip and a plurality of optical machine modules. And the LED light machine module is a more standardized, built-in drive power and LED lighting chip structure, which is structurally conducive to the standardization and large-scale promotion of LED lighting.

The technical solution of the present invention is: a LED illumination large chip, which is characterized in that: a first transparent substrate having a width W is fixed, and the first transparent substrate is provided with N+1 parallel interface wires, and the first transparent substrate is provided with N LED chips form a series connection of LED chips, each LED chip is located between two adjacent interface wires, the spacing between two adjacent interface wires is W _JG is equal to W minus interface wire width and then divided by N (W) _JG = (W-interface wire width) / N), and the positive and negative poles of each LED chip are respectively connected to two adjacent interface wires; and a plurality of LED series groups are connected in parallel at the same time, so that the first transparent substrate N rows of rows of LED chip arrays are formed which extend in the longitudinal direction of the first transparent substrate, and N is an integer between 3 and 7.

In the above LED lighting large chip, the LED chip array and the interface wire are formed on the first transparent substrate by using a transparent substrate as a thin epitaxial wafer formed by a transition epitaxial layer, and the epitaxial wafer adopts a mature chip manufacturing technology. a layer growth circuit and an LED chip, and then being cut to form an LED illumination large chip having a width W, wherein the grown circuit comprises an interface wire and a wire connecting the chip of the LED chip and the interface wire, and the transparent substrate is used as a substrate; Since the chip diode does not need to be soldered, a transparent electrode, such as indium tin oxide (ITO), can be used to increase the light-emitting area of the chip; the mature manufacturing technology of the chip is to layer the silicon by using an organometallic chemical vapor deposition device. Gluing, photolithography, etching, coating, alloying, and grinding, etc.; or conventionally mounting an array of LED chips on a first transparent substrate printed with a silver paste circuit, and flip-chip bonding or gold wire assembly Welding is connected with the silver paste circuit on the first transparent substrate to obtain a large LED illumination chip, and the silver paste brush circuit includes an interface wire and a connection LED chip and connection Wires connecting die wire.

The LED driving power large chip is characterized in that: a second transparent substrate having a width fixed to W is included, a second transparent substrate is printed with a silver paste circuit, an interface wire is formed on the silver paste circuit, and the interface wire has an access end and an output end. The width of the access end is the same as the width W _{G of the} optical module (43) wire access end or has a pad connected to the electrical connector; the output of the silver paste circuit has N+1 parallel interface wires, adjacent to the two The spacing of the strips of the interface wires W _JG is equal to the width of the W minus the interface wires and then divided by N (W _JG = (W - interface wire width) / N); the second transparent substrate is pasted with an unpackaged power supply to drive the wafer level chip and Rectifier bridge wafer level chip, then soldering the unpackaged power supply wafer level chip and rectifier bridge wafer level chip on the second transparent substrate; the rectifier bridge wafer level chip can be combined in the power drive wafer level chip The width of the interface wire end of the second transparent substrate having the output end is the same as the width W of the LED illumination large chip, and the height is H2; the purpose of the interface wire on the output end of the LED driving power supply chip is to connect the LED lighting large chip. Chip array of. N is an integer between 3 and 7.

The LED light machine module formed by using the above-mentioned LED lighting large chip and LED driving power large chip is formed according to the following method: according to the power requirement, the LED lighting large chip is cut and cut into LED lighting large chips of different lengths. With different power, the silver paste circuit is printed on the optomechanical template, and the silver paste circuit on the optomechanical template also has the interface wires, and the number and spacing are the same as the interface wires of the LED illumination large chip; the LED illumination large chip with the chip One side is attached to the side of the optical template with the silver paste circuit for butt welding, and the interface wires of the two are soldered correspondingly; at the same time, the side of the LED driving power large chip with the silver paste circuit is attached to the side of the optical template with the silver paste circuit. Butt welding; thus, the LED lighting large chip is connected with the LED driving power large chip; finally, the transparent light is used to encapsulate the gap between the LED lighting large chip and the driving power large chip. The LED chip carries a voltage of about DC3.2V (adjusted according to actual conditions) or a high voltage greater than DC10V.

The large-chip horizontally arranged LED light machine module is characterized in that it comprises a transparent light machine template printed with a silver paste circuit, the silver paste circuit forms an interface wire on the light machine template, and the width and spacing of the interface wire and the LED The width of the large chip and the LED driver power supply are the same as the width W _JG ; for large power modules, it is necessary to drive the optical template and more than one LED through the transition circuit integrated transparent block. Power supply large chip connection; then the above-mentioned LED drive power large chip and LED illumination large chip with a silver paste circuit on one side of the transparent light machine template with a silver paste circuit side by the interface wire butt welded to the large chip horizontally arranged LED light machine mode group.

In the above-mentioned large chip horizontal arrangement LED light machine module, for medium and small LED light machine modules, an external power source or signal is directly connected through a connector from a large LED driving power source chip soldered to the light template; The LED light machine module has a flexible circuit soldered on the light machine template, and the external power source or signal is connected to the flexible circuit through the connector to the LED driving power large chip soldered on the light machine template; for the large LED light machine mode The power of the group is large, and one or more LED driving power large chips and one or more LED lighting large chips are soldered on the optical template; the LED driving power large chip, the LED lighting large chip and the transition circuit can also be integrated. The transparent block is sealed with a transparent glue to obtain an LED light machine module.

In the foregoing large chip horizontal arrangement LED light machine module, the transparent transition circuit integrated transparent block comprises a third transparent substrate, the third transparent substrate is printed with a silver paste circuit, the silver paste circuit has an interface wire, and the interface wire has 1 and at least one set of access terminal sets an output terminal; the same width as the access terminal ray templates access end wire width W _G; the same as the width of the interface wires to the LED driving power output of the access end of the large chip width W _G; the The side of the transition circuit integrated transparent block printed with the silver paste circuit is butt welded to the side of the optical template with the silver paste circuit by the interface wire. The transition circuit integrated transparent block is used to connect an external power source or signal to more than one LED driving power large chip, and then output the large chip to the LED lighting large chip through the LED driving power. It solves the circuit requirements of the LED light machine module, so that the external power supply or signal should be connected to the LED drive power large chip or the LED drive power large chip output to the LED lighting large chip circuit needs to be involved on the optical machine template on both sides The printed circuit can be realized. Generally, the back of the optomechanical template will be used close to the heat sink, and the heat sink is mostly made of metal. The back of the optomechanical template needs to be insulated, and the problem of the double-sided printed circuit cannot be realized.

A large-chip vertically arranged LED light machine module is characterized in that it comprises a transparent light machine template printed with a silver paste circuit, and the silver paste circuit forms an interface wire on the light machine template, the width and spacing of the interface wires and the LED The large width of the large chip and the LED driver power supply chip have the same width W and the spacing W _JG ; the LED illumination large chip is connected to the optical machine template perpendicularly to the optical machine template through one or more L-shaped transparent transition circuit integrated transparent blocks. On the stencil; or for a large optomechanical template, the transparent drive block of the B-type transparent transition circuit integrates the LED drive power chip with one or more L-shaped C-type transparent transition circuits. The transparent block will illuminate one or more LEDs. The large chip is connected to the optomechanical template perpendicular to the templating template; then the side of the LED driving power large chip with the silver paste circuit and the side of the transparent tempering template with the silver paste circuit are soldered to the optical module by the interface wire.

In the above-mentioned large chip vertically arranged LED light machine module, for the medium and small LED light machine module, the external power source or signal is directly connected through the connector from the LED driving power large chip soldered on the light machine template; Large LED light machine module, the optical machine template is also welded with a flexible circuit, the external power supply or signal is connected to the flexible circuit through the connector to the LED driving power large chip soldered on the optical template; the last along the LED driving power supply Large chip, LED lighting chip and B-type transparent transition circuit integrated transparent block (or C-type transparent transition circuit integrated transparent block, or D-type transparent transition circuit integrated transparent block) peripheral sealed transparent plastic packaged complete LED light machine module .

In the foregoing large chip vertically arranged LED light machine module, the D-type transparent transition circuit integrated transparent block comprises an L-shaped transparent substrate, a silver paste circuit is printed on the transparent substrate, and the silver paste circuit is an L-shaped interface wire, The width, the number and the spacing of the interface wires are the same as the width W, the number N+1 and the spacing W _{JG of the} LED lighting large chip and the LED driving power large chip; the C-type transparent transition circuit integrated transparent block comprises an L-shaped transparent substrate, A silver paste circuit is printed on the transparent substrate, and the silver paste circuit is a pair of interface wires of L-shaped space, the width, number and spacing of the interface wires of each group and the width of the large chip of the LED illumination large chip and the LED driving power source W The number of N+1 and the spacing W _{JG are the} same; the side of the LED illumination large chip with the silver paste circuit and the transparent transition circuit of the L-shaped transparent block with the silver paste circuit are butt welded by the interface wire; The transparent transition circuit integrates the transparent block with the silver paste circuit on the other side and the side of the optical template with the silver paste circuit is butt welded according to the interface wire; the B-type transparent transition circuit has a set of access terminals for the interface wire of the transparent block integrated transparent block And 1 group The output terminal, the width, number and spacing of the LED drive interface wires width W large chip power, N + the number 1 and the same pitch W _JG.

The arrangement method of the large chip on the non-insulating heat-conducting substrate is characterized in that: the non-insulating heat-conducting substrate is included, the E-type transparent transition circuit is integrated with the transparent block, and one side of the silver paste circuit is closely attached to the non-insulating heat-conducting substrate; the LED driving power source is One side of the large chip with the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block with the silver paste circuit for conducting butt welding; the side of the LED illumination large chip facing the silver paste circuit closely fits the non-insulated thermal conductive substrate arrangement, The interface wire end is aligned with the E-type transparent transition circuit integrated transparent block output end interface wire end; the LED illumination large chip with the chip side is further provided with an F-type transparent transition circuit integrated transparent block; the F-type transparent transition circuit One end of the integrated transparent block with the silver paste circuit surface and the side of the LED illumination large chip with the silver paste circuit are butt welded according to the interface wire, and the other end is integrated with the E-type transparent transition circuit, and the transparent block with the silver paste circuit is connected by the interface wire. Soldering the LED light machine module.

In the method for arranging the large chip on the non-insulating heat-conducting substrate, the non-insulating heat-conducting substrate is made of a metal or non-metal heat-conducting material, and the bonding surface of the large chip with the LED illumination is a mirror surface; the non-insulating heat-conducting substrate may be a light machine. The type of template, or the type of heat-conducting bracket of the bulb, or other type of radiator-like type; for medium and small LED templating templates, the external power supply or signal is directly soldered to the templating template by the connector. The LED driving power supply is connected on a large chip; for the large-sized LED optical machine module, the external power supply or signal is connected to the flexible circuit through the connector to the transparent transparent circuit integrated transparent block and then the LED driving power large chip is introduced; The LED driving power supply chip is also provided with a transparent cover plate; the LED light machine module is integrated and transparent along the LED driving power large chip, the LED lighting large chip, the E-type transparent transition circuit integrated transparent block and the F-type transparent transition circuit. A transparent LED is mounted on the block to obtain a packaged LED light machine module.

In the method for arranging the large chip on the non-insulating heat-conducting substrate, the E-type transparent transition circuit integrated transparent block comprises a third transparent substrate, the third transparent substrate is printed with a silver paste circuit, and the silver paste circuit is an interface wire. The interface wires have an access terminal and an output terminal. The width of the access terminal wire is the same as the width W _{G1 of the} flexible circuit access end or the pad connected to the electrical connector, the width, number and spacing of the interface wires at the output end and the width of the LED illumination chip W, the number N+ 1 and the spacing W _{JG is the} same, the interface wire is also connected to the input end of the LED driving power large chip, and its width is W _G ; the F-type transparent transition circuit integrated transparent block includes a fourth transparent substrate, and the fourth transparent substrate The silver paste circuit is printed, and the silver paste circuit is an interface wire. The width, number and spacing of the interface wires are the same as the width W, the number N+1 and the spacing W _{JG of the} LED illumination large chip. The transition circuit integrated transparent block is used to connect an external power source or signal to more than one LED driving power large chip, and then output the large chip to the LED lighting large chip through the LED driving power. It solves the circuit conversion problem of the external power supply or signal input LED drive power large chip or LED drive power large chip output to the LED illumination large chip circuit.

The other non-insulating heat-conducting substrate of the heat sink type comprises a heat sink, and the heat sink is provided with an inner snap ring and a fixing groove of the inner cover, and the inner snap ring and the fixing groove of the inner cover are fixed and fixed in the fixing groove, the inner card The ring is fixed by screws twice; the inner cover with phosphor or the transparent glue with phosphor on the surface of the LED illumination large chip can be replaced; or the inner ring cover can be bonded to the inner snap ring and the inner cover The lens is fixedly fixed on the inner snap ring and fixed by the lens retaining ring twice, and the lens retaining ring is fixed on the inner snap ring by the snap ring fixing screw; the heat sink is further provided with a connector, and the flexible The circuit is connected to the connector and the transparent transition circuit with an integrated transparent block.

The foregoing driving method of the LED is characterized in that: the mains AC is converted into a pulsating direct current through a rectifier bridge, the voltage of the pulsating direct current is greater than zero, less than or equal to the rated maximum working voltage V _WR of the pulsating direct current, and the third to seventh segments are set on the pulsating direct current. LED load, each segment of LED load is connected in series to form an LED load series segment group. When the voltage of the pulsating direct current increases, the number of segments of the LED load series increases step by step. When the voltage of the pulsating direct current decreases, the number of segments of the LED load connected in series is stepwise. Decrease, the number of segments in which the LED load is connected in series is the number of segments in which the LED load actually connected to the pulsating direct current is connected in series. After the mains AC passes through the rectifier bridge, it becomes a pulsating DC power. For example: AC220V, 50Hz AC is rectified by the rectifier bridge, and the voltage is a half-period (180 degree) waveform. When the period is 0 degrees, the pulsating DC voltage is zero. When the pulsating DC voltage reaches the maximum value, V _WR is the highest DC 311V. At 180 degrees, the voltage drops to zero again and again.

In the foregoing LED driving method, the segment in which the LED load is connected in series is controlled by a switch, and the control node of the switch is a segmentation limit of the voltage, the number of segments of the voltage and the LED The number of segments in the load series corresponds. The LED load can be divided into 3 to 7 segments, with few segments and simple circuit, but the current varies greatly, and it is easy to generate low-order harmonics in the power grid; if there are many segments, the circuit structure is complicated. Generally, 4 to 6 segments are preferred.

In the foregoing LED driving method, the method for controlling the number of segments of the LED load in series is: connecting the negative direction of each LED load to the negative pole of the pulsating direct current through a switch, and then performing on/off of each switch according to the voltage change of the pulsating direct current. Control, using a way to open some segments of the switch (and thus the LED load is also open) to achieve the change in the number of segments of the LED load series.

In the foregoing LED driving method, when the pulsating direct current working voltage V _{W of the} pulsating direct current is set to be longer than V _Wmax , all the switches are controlled to be disconnected, power supply to all the LED loads is stopped, and overvoltage and surge protection for the LED are realized; A given voltage V _{T is set} to adjust the maximum allowable pulsating DC voltage V _Wmax of the pulsating direct current, thereby achieving adjustment of the illuminance of the LED.

In the foregoing LED driving method, the switch operates in a pulsating DC voltage rising phase delay time t _m (eg, t _m =0.1 ms) milliseconds; in the pulsating DC voltage falling phase, an advance t _m (eg, t _m =0.1 ms) milliseconds Action; to obtain a relatively smooth LED operating current.

In the foregoing LED driving method, the effective working current I _W in the circuit is measured by setting a current sensor. When I _W exceeds the design value KI _WR , all switches are turned off to achieve current protection, and the opening of the switch needs to be restored after the next reloading of the voltage. Where K is the adjustment factor and I _WR is the rated effective operating current.

In the foregoing LED driving method, two sets of complete circuits of the belt driving and the LED load are set to work together at the same time, wherein: one group of LED loads has a higher color temperature, and when the given voltage V _T value tends to be low, The maximum allowable pulsating DC voltage V _Wmax tends to be high; while the other set of LED loads have a lower color temperature, the maximum allowable pulsating DC voltage V when the given voltage V _T value tends to be low _Wmax tends to be low. Adjusting the given voltage V _T value can achieve adjustment of the LED illumination color temperature.

In the foregoing LED driving method, each LED load connected in series is set as an LED chip set having different maximum carrying voltage values; the LED load series segment group working under the switch control can obtain an operating current close to an ideal sine wave. curve.

In the foregoing LED driving method, the method for adjusting the maximum carrying voltage of the LED chip set of each segment of the LED load is: (the key is to calculate the total maximum carrying voltage value of the series segment group) 1 with the pulsating DC voltage as the ordinate, The pulsating DC period (180 degrees) is plotted on the abscissa; 2 assuming a purely resistive load, the power of the sinusoidal pattern formed by the pulsating DC half-wave is 1 and plotted; 3 due to the increase in the LED voltage, the current is substantially increased. Sexual damage. Set the carrying capacity of the LED load series segment group to 120% of the pure resistive load, and make a rectangular shadow map with an area of 1.2. The ordinate value of the rectangular shadow is the total maximum carrying voltage value of the series segment group; 4 Similarly, Knowing that the LED chipset bears the voltage, the graph area of the chipset can be drawn, and the sum of the area of the chipset is verified to be larger than the pulsating DC sine wave area under the control node of the switch; 5 The carrying voltage values of the chipset on the group may be greater than or equal to the total maximum carrying voltage value of the series segment group; wherein the LED chip set with a higher carrying voltage value is close to the positive terminal (the initial segment), and the carrying voltage value is lower. The LED chipset is close to the negative terminal (the last segment).

The LED lighting circuit for realizing the foregoing method is characterized in that: the rectifier bridge including the input end connected to the main power, the anode of the output end of the rectifier bridge is connected to the positive pole of the LED load connected in series of 3 to 7 segments, and the negative pole of each LED load is respectively Connected to the connection node of the driving power chip, the negative end of the output end of the rectifier bridge is connected to the ground end of the driving power chip, and the driving power chip further has an operating voltage detecting end connected to the front end of all the LED loads, The maximum allowable pulsating DC voltage regulation terminal is also provided on the driving power chip.

In the foregoing LED lighting circuit, the driving power chip comprises a voltage detecting and logic switch controller, a voltage detecting and a logic switch controller, and a working voltage detecting end and a maximum allowable pulsating DC voltage adjusting end; and a connection node, each Each of the connection nodes is connected to the ground through a switch, and the control terminals of each switch are connected to the voltage detection and logic switch controller.

In the foregoing LED lighting circuit, each of the connection nodes is respectively connected to the same merged connection line through the switch tube, and then connected to the ground end through the merged connection line, and the current detection circuit is provided on the merged connection line, and the current detection circuit is provided. The output is connected to the voltage detection and logic switch controller.

In the foregoing LED light machine module, the material of the light machine template is a sheet non-metallic transparent material (such as SiO ₂ , Al ₂ O _{3 ,} etc.), which is to heat the thin plate to a softening point of the near material, and adopts a mold. Stamping equipment is stamped and formed. (The material is brittle and has a high hardness. This can only be processed when it is cut into a stencil form shape, and the cost is high.)

The method for constructing the LED lighting core component by using the foregoing LED light machine module: the flexible circuit is arranged on the LED light machine module, and the inner cover with the phosphor is loaded; the inner cover with the phosphor is phosphor-containing The injection molding granules are mixed with the transparent injection-molded granules containing no phosphor; the mixing ratio is configured as needed, and then obtained by injection molding; wherein the phosphor-containing injection granules are 20 to 30% phosphor powder and 70 ~80% transparent injection granules are mixed, and then re-formed into injection-molded pellets after hot-melting; phosphors with phosphors with afterglow time greater than 8ms are used.

Another LED light machine module is characterized by: including a transparent light machine template, a light machine A silver paste printed circuit is printed on the template, and a power source driving wafer level chip and a rectifier bridge wafer level chip are pasted on the optical template, and the power driving wafer level chip and the rectifier bridge wafer level chip are unpackaged wafer level. The device; the power-driven wafer-level chip and the rectifier bridge wafer-level chip are soldered to the silver paste printed circuit by flip-chip bonding or dress-welding gold wire; the optical template can also be provided with a flexible transfer soldered to the silver paste printed circuit. a circuit chip; the LED chip array is also bonded with an array of LED chips; the LED chip array is composed of a plurality of series segments connected in parallel, and each series segment is composed of 3 to 7 LED chips capable of withstanding high voltage. Composed, each LED chip is soldered to the silver paste printed circuit by flip chip bonding or dressing solder gold wire.

In the above LED light machine module, the power source driving wafer level chip, the rectifier bridge wafer level chip and the LED chip are filled with a transparent sealant for leveling, and then, in addition to the reserved installation and soldering position, Type and size of the same transparent cover plate with the templating template to form a seal thereon; or directly drive the wafer level chip, the rectifier bridge wafer level chip and the LED chip to form a layer to drive the wafer level chip, Rectifier bridge wafer level chip and LED chip sealed transparent sealant.

Compared with the prior art, the LED lighting large chip of the invention can be conveniently used for LED light machine modules with different power requirements, and can be driven by a large power chip, and the LED lighting large chip is designed to have a fixed width W. The length is determined according to the specifications of the manufacturing equipment, and is divided into different lengths when used. In this way, the LED lighting large chip does not need to be cut into a millimeter size for a single LED chip, and the mechanical characteristics of the substrate are reduced when the chip is fabricated, so that the selection range of the polycrystalline high-purity alumina and the like enters the substrate is greatly increased. The manufacturing cost of the LED lighting chip is reduced; the LEDs of each LED chip in the large chip do not need to be soldered, and the electrode can be made smaller and the transparent electrode can be used, which can effectively increase the light emitting area of the chip and improve the luminous efficiency. Starting from the chip factory, the large-scale lighting chip can be directly mounted on the light machine template or the heat-conducting bracket of the light bulb in combination with the large power chip. The LED lighting production process is short and simple. At the same time, the large chip is cut according to the power use. The factors that are easy to determine during the whole process of design and production to the product are easy to control and realize the standardization operation. The large-scale lighting chip divided by the power can satisfy most lighting applications. It is required that such a non-cutting and limited number of large-scale lighting chips can easily achieve a high degree of industrial concentration, which will greatly reduce the manufacturing cost of lighting products; change the existing packaging industry concept of LEDs, and only need to flip the large chips after lighting It can be simply packaged around the large chip, or it can be covered by a cover plate when using a formal package, bypassing the patent barriers of foreign countries.

The LED lighting large chip of the invention can meet various basic requirements of LED lighting applications such as driving, dimming, over voltage and surge protection, overload, etc., and can be made smaller in size, so that the driving power can be put The inside of the bulb is even inside the optomechanical module. This pair of LED photos Low cost and miniaturization are very important. Therefore, the development of the LED chip in the direction of integration can be promoted, and the emergence of the large-scale illumination chip becomes a reality. The joint use of the two will further promote the rapid development of the LED lighting industry.

The optomechanical module of the present invention can be applied to various types of bulb patents previously applied by the inventors, replacing the original optomechanical modules in the bulb. The optomechanical module of the invention can be built with a power source and an LED illumination chip, and has a small size and is easy to standardize. The invention can change the existing industrial structure centered on the LED chip, and the LED light machine module of the invention can realize the standardization of the light source (light bulb) in the mode of the replaceable light source, thereby reducing the industrial complexity and improvement of the lighting product. Industrial concentration of lighting products.

The LED large chip of the present invention can be directly driven by an external driving power source.

In addition, the present invention converts the commercial power into the pulsating direct current through the rectifier bridge, and simultaneously divides the voltage in each cycle into multiple segments according to the phase, and utilizes the characteristics of different voltages in the plurality of segments, and uses the switch pair to connect the LED load of the working state. The number of segments is adjusted so that the LED load enters a controlled operation mode, which can satisfy the power supply of the LED chip, and the LED driving method of the present invention can greatly reduce the complexity of the LED driving power supply, thereby making the LED optical mode A built-in drive power supply is possible, which is significant for achieving greater versatility and interchangeability of LED bulbs.

DRAWINGS

Figure 1 is a front elevational view showing the appearance of an LED chip of the present invention;

2 is an external view of a LED lighting large chip of the present invention;

3 is an external view of a large LED illumination chip using gold wire bonding according to the present invention;

4 is a front view of a large chip of a high power LED driving power supply according to the present invention;

Figure 5 is a front view of the large chip of the low power LED driving power supply of the present invention;

6 is a front view of a large chip of a high power LED driving power source with a resistor according to the present invention;

Figure 7 is a large optomechanical template printed with a silver paste circuit of the present invention;

Figure 8 is a large optomechanical module of the present invention;

Figure 9 is a large optomechanical module of the invention;

10 is a schematic circuit diagram of a small optical machine template of the present invention;

Figure 11 is a schematic circuit diagram of a medium-sized optomechanical template of the present invention;

12 is a schematic diagram of a small optical machine module with a horizontal arrangement of a large chip according to the present invention;

13 is a schematic view of a medium-sized optical machine module with a horizontal arrangement of a large chip according to the present invention;

14 is a schematic circuit diagram of a large-scale optical machine template in which a large chip is horizontally arranged according to the present invention;

15 is a schematic circuit diagram of a high-power large-scale optical machine template in which a large chip is horizontally arranged according to the present invention;

16 is a schematic diagram of a large-scale optical machine module with a horizontal arrangement of a large chip according to the present invention;

17 is a schematic diagram of a high-power large-scale optical machine module with a horizontal arrangement of a large chip according to the present invention;

18 is a schematic structural diagram of an integrated transparent block of a transition circuit according to the present invention;

19 is a schematic structural view of a small-scale optical module of a horizontal chip of a large chip according to the present invention;

20 is a schematic structural view of a medium-sized optical module of a horizontal chip of a large chip according to the present invention;

21 is a schematic circuit diagram of a large-scale horizontal illuminator template of a large chip of the present invention;

22 is a schematic structural view of a large-scale horizontal illuminating module of a large chip according to the present invention;

23 is a schematic structural view of a B-type transition circuit integrated transparent block of the present invention;

24 is a schematic structural view of a C-type transition circuit integrated transparent block of the present invention;

25 is a schematic structural view of a D-type transition circuit integrated transparent block of the present invention;

26 is a schematic view showing a layout method of a large chip on a non-insulating heat-conductive substrate;

Figure 27 is a schematic view showing the structure of a finished product of a large optomechanical module using the method shown in Figure 26;

28 is a schematic exploded view showing the structure of a large optomechanical module using the method shown in FIG. 26 according to the present invention;

29 is a schematic structural view of a bulb with a heat conducting bracket as a substrate using the method shown in FIG. 26 according to the present invention;

Figure 30 is a schematic view showing the structure of a small-sized optical machine module using the method shown in Figure 26;

Figure 31 is a schematic view showing the structure of a finished product of a medium-sized optomechanical module using the method shown in Figure 26;

32 is a schematic structural view of an integrated transparent block of an E-type transition circuit according to the present invention;

33 is a schematic structural view of an integrated transparent block of an F-type transition circuit according to the present invention;

FIG. 34 is a waveform diagram of LED voltage and current according to an embodiment of the present invention; FIG.

FIG. 35 is a waveform diagram of an ultra high voltage operation power according to an embodiment of the present invention; FIG.

36 is a waveform diagram of a dimming operation power according to an embodiment of the present invention;

Figure 37 is a circuit connection diagram of an embodiment of the present invention;

38 is a circuit diagram of an internal circuit of a driving power supply chip according to an embodiment of the present invention;

39 is a waveform diagram of LED voltage and current according to an embodiment of the present invention;

FIG. 40 is a power loading distribution diagram of an LED chip array module in a DC52V series according to an embodiment of the present invention; FIG.

FIG. 41 is a schematic diagram of voltage carrying of an LED chip array according to an embodiment of the present invention; FIG.

FIG. 42 is a schematic diagram of carrying power of a single DC52V chip according to an embodiment of the present invention; FIG.

Figure 43: LED chip array module in series 2*52V+4*35V in the embodiment of the present invention Rate loading profile;

44 is a schematic view showing a template of a optomechanical printed with a silver paste circuit according to an embodiment of the present invention;

45 is a diagram of a light module of a gold chip soldering joint of an embodiment of the present invention;

FIG. 46 is a schematic diagram of a light machine module in which an LED chip is flip-chip bonded according to an embodiment of the present invention; FIG.

47 is a diagram of a optomechanical module after encapsulating a transparent cover according to an embodiment of the present invention;

Figure 48 is a view of the optomechanical module after the sealing is completed in the embodiment of the present invention.

detailed description

The invention is further illustrated by the following figures and embodiments, but is not to be construed as limiting the invention.

Example. The LED illumination chip, as shown in FIG. 1 to FIG. 3, includes a first transparent substrate 421 having a width W, and the first transparent substrate 421 is provided with N+1 parallel interface wires, and the first transparent substrate 421 is disposed. There are N LED chips 41 to form a series of LED chips, each LED chip 41 is located between two adjacent interface wires, the spacing between two adjacent interface wires is W _JG is equal to W minus the width of the interface wire and then divided by N (W _JG = (W-interface wire width) / N), and the positive and negative poles of each LED chip 41 are respectively connected to two adjacent interface wires; and simultaneously parallel multiple LED series groups, so that An N-row multi-row LED chip array which can extend in the longitudinal direction of the first transparent substrate 421 is formed on a transparent substrate 421, and N is an integer between 3 and 7.

The LED chip array and the interface wire are formed on the first transparent substrate 421 by using a transparent substrate as a thin epitaxial wafer formed by a transition epitaxial layer, and the epitaxial wafer adopts a mature chip manufacturing technology to form a layered growth circuit and an LED chip. And then cutting to form a large LED chip with a width W, wherein the grown circuit comprises an interface wire and a wire connecting the chip of the LED chip and the interface wire, the transparent substrate is used as a substrate; the chip diode does not need to be soldered A transparent electrode, such as indium tin oxide (ITO), may be used to increase the light-emitting area of the chip; the mature manufacturing technology of the chip is a layered silicon, sizing, photolithography, and etching using an organometallic chemical vapor deposition apparatus. , plating, alloying, and grinding, etc.; or conventionally mounting the LED chip array on the first transparent substrate 421 of the printed silver paste circuit 414, and by flip chip bonding or gold wire assembly soldering with the first transparent The silver paste circuit 414 on the substrate 421 is connected to obtain a large LED illumination chip, and the silver paste brush circuit 414 includes an interface wire and a connection between the LED chip and the interface wire. Conductor chip.

LED driving power large chip: comprising a second transparent substrate 413 having a width fixed by W, the second transparent substrate 413 is printed with a silver paste circuit, an interface wire is formed on the silver paste circuit, and the interface wire has an access end and an output end; The width of the inlet end is the same as the width W _{G of the} wire access end of the optomechanical template 43 or has a pad connected to the electrical connector; the silver paste circuit at the output end has N+1 parallel interface wires, and the adjacent two interface wires The pitch W _JG is equal to W minus the interface wire width and then divided by N (W _JG = (W - interface wire width) / N); the second transparent substrate 413 is pasted with an unpackaged power source to drive the wafer level chip 411 and the rectifier bridge The wafer level chip 412 then solders the unpackaged power source driving wafer level chip 411 and the rectifier bridge wafer level chip 412 on the second transparent substrate 413; the rectifier bridge wafer level chip 412 can be combined in the power driving crystal In the circular chip 411; the width of the interface wire end of the second transparent substrate 413 having the output end is the same as the width W of the LED illumination chip, and the height is H2; the purpose of the interface wire on the output end of the LED driving power chip is to connect the LED lighting core Array on the chip.

Its typical size is L = 12.4 mm, h2 = 8 mm (large) or L = 12.4 mm, h2 = 9.7 mm (medium and small), and the total thickness is less than 1 mm, see Figures 4 and 5. To prevent oxidation and damage to the wafer level chip, localized dot protection on the wafer level chip surface.

The LED driving power large chip 410 has the same width W and interface wire spacing W _JG as the input path of the LED lighting large chip 420; the width W and the interface wire spacing W _JG are LED lighting large chips 420 of different manufacturers and LED drivers of different manufacturers A universal connection interface between the power large chips 410. The width W of the output circuit is the LED series length * interface wire pitch W _JG + wire width.

Since the LED driving power large chip 410 can directly use the commercial power supply, the optical module 4 constructed by using the LED driving power large chip 410 has the characteristics of small size, ultra-thin and overall transparency, see FIG. 4 and FIG.

In order to provide a more stable working power for the LED power driving chip 411, a resistor 416 can be disposed on the back of the LED driving power large chip 410 to facilitate adjustment of the internal reference voltage, see FIG.

The LED light machine module formed by using the aforementioned LED lighting large chip, as shown in FIGS. 7 to 9, is formed by the following method: according to the power requirement, the LED lighting large chip 420 is cut and cut into LEDs of different lengths. The illumination chip 420 has different powers, and the silver paste circuit 414 is printed on the optomechanical template 43, and the silver paste circuit 414 on the optomechanical template 43 also has interface wires, and the number and spacing are the same as those of the LED illumination chip 420. The side of the LED illumination chip 420 with the chip is attached to the side of the optomechanical template 43 with the silver paste circuit 414 for butt welding, and the interface wires of the two are soldered correspondingly; at the same time, the LED drive power chip 410 with the silver paste circuit One side is attached to the side of the optomechanical template 43 with the silver paste circuit 414 for butt welding; thereby, the LED illumination large chip 420 is connected to the LED driving power large chip 410; finally, the transparent LED is used to package the LED illumination large chip and the driving power supply around the large chip. The gap. The LED chip carrying voltage is ~DC3.2V or greater than DC10V High voltage.

The large-chip horizontally arranged LED light machine module comprises a transparent light machine template 43 printed with a silver paste circuit 414. The silver paste circuit 414 forms an interface wire on the light machine template 43, the width and spacing of the interface wires and the LED The width W and the width W _{JG of the} large LED chip 420 and the LED driving power chip 410 are the same; for a large power module, or a transition circuit integrated transparent block 430, the optical template 43 and one are required. The above LED driving power large chip 410 is connected; then the LED driving power large chip 410 and the LED lighting large chip 420 with a silver paste circuit 414 on one side of the transparent optical template 43 with the silver paste circuit 414 are soldered to the LED by the interface wire. Light machine module.

For medium and small LED illuminator modules (the optomechanical templates are shown in Figures 11 and 10, respectively), an external power source or signal is directly passed through the connector 11 from the LED driving power supply large chip 410 soldered on the optomechanical template 43. Accessing, as shown in FIG. 12 and FIG. 13; for a large-scale LED optical module, the optical template 43 is as shown in FIG. 14, and the optical template 43 is also soldered with a flexible circuit 44, and an external power source or signal is connected. The plug-in 11 is connected to the flexible circuit 44 to be connected to the LED driving power large chip 410 soldered on the optomechanical template 43; for the larger power of the large LED illuminating module, the optomechanical template 43 is as shown in FIG. One or more LED driving power large chips 410 and one or more LED lighting large chips 420 are soldered on the template 43, as shown in FIG. 16 and FIG. 17; finally, the LED driving power large chip 410, the LED lighting large chip 420 and Or the transition circuit integrated transparent block 430 is sealed with a transparent glue 45 to obtain an LED light machine module.

The transparent transition circuit integrated transparent block 430 is shown in FIG. 18, and includes a third transparent substrate 431. The third transparent substrate 431 is printed with a silver paste circuit 414. The silver paste circuit 414 has an interface wire, and the interface wire has one set of access. end and at least one group of output terminals; same access end 43 of the wire access points the width of the ray pattern width W _G; the output of the interface wires to the LED driver access terminal power large chip 410 width W _G the same; transition circuit One side of the integrated transparent block 430 printed with the silver paste circuit 414 is butt welded to the side of the optical template 43 with the silver paste circuit 414 by an interface wire; the transition circuit integrated transparent block 430 is used to connect an external power supply or signal to one or more The LED driving power large chip 410 is output to the LED lighting large chip 420 through the LED driving power large chip 410. Solved the circuit requirements of the LED light machine module, to make the external power supply or signal into the LED drive power large chip 410 or the LED drive power large chip output to the LED lighting large chip 420 circuit needs to involve the optical machine template on both sides The printed circuit can be realized. Generally, the back of the optomechanical template will be used close to the heat sink, and the heat sink is mostly made of metal. The back of the optomechanical template needs to be insulated, and the problem of the double-sided printed circuit cannot be realized. The transition circuit integrated transparent block of the present invention comprises a transition circuit integrated transparent block: Type A: the external power supply and the signal are respectively connected to the dual LED driving power large chip 410, see FIG. 18, wherein the width of the external wire access is W. _G ; LED drive power large chip 410 wire access width is W _G . Its total width is 2*W+1mm and height is H2; typical dimensions are: width 25.8mm, height: H2=6mm.

The LED light machine module vertically arranged on the large chip comprises a transparent light machine template 43 printed with a silver paste circuit, and the silver paste circuit forms an interface wire on the light machine template 43, the width and spacing of the interface wires and the LED illumination are large. The width W and the pitch W _{JG of the} chip 420 and the LED driving power large chip 410 are the same; the LED lighting large chip 420 is connected to the optical template 43 by one or more L-shaped transparent transition circuit integrated transparent blocks 460. On the templating template 43; or for the large optomechanical template, the LED driving power large chip 410 is integrated with one or more L-shaped C-type transparent transition circuits through the B-type transparent transition circuit integrated transparent block (440). Block 450 connects one or more LED lighting large chips 420 perpendicular to the optical template 43 to the optical template 43; and then the LED driving power large chip 410 with the silver paste circuit side and the transparent optical template 43 with the silver paste circuit One side is welded to the product by the interface wire.

For the small and medium-sized LED illuminator modules, as shown in FIG. 19 and FIG. 20, the external power source or signal is directly connected through the connector 11 from the LED driving power large chip 410 soldered on the optomechanical template 43; As shown in FIG. 21 and FIG. 22, the optical template 43 is also soldered with a flexible circuit 44. The external power supply or signal is connected to the flexible circuit 44 through the connector 11 for soldering to the optical template 43. LED driver power supply on the large chip 410; finally along the LED drive power large chip 410, LED lighting large chip 420 and B-type transparent transition circuit integrated transparent block 440, C-type transparent transition circuit integrated transparent block 450 or D-type transparent transition circuit integration The transparent block 460 is sealed with a transparent glue 45 to obtain an LED light machine module.

The D-type transparent transition circuit integrates a transparent block 460, as shown in FIG. 25, comprising an L-shaped transparent substrate, a silver paste circuit printed on the transparent substrate, an L-shaped interface wire, and a width of the interface wire. The number and the spacing are the same as the width W, the number N+1 and the spacing W _{JG of the} LED lighting large chip 420 and the LED driving power large chip 410; the C-type transparent transition circuit integrated transparent block 450 is as shown in FIG. 24, including L-shaped transparent substrate, printed on the transparent substrate with a silver paste circuit, the silver paste circuit is a spatially L-shaped two sets of interface wires, the width, number and spacing of each set of interface wires and the LED illumination large chip 420 and LED The width W, the number N+1 of the driving power large chip 410 and the spacing W _{JG are the} same; the side of the LED lighting large chip 420 with the silver paste circuit and the transparent transition circuit of the L-type integrated transparent block with the silver paste circuit side Butt welding according to interface wire; L-shaped transparent transition circuit integrated with transparent block with silver paste circuit on the other side and the side of the optical template 43 with the silver paste circuit are butt welded according to the interface wire; the B-type transparent transition circuit is transparent Block 440 is shown in Figure 23, which Interface wires 1 and at least one set of access terminal sets the output terminal, the width, number and spacing of the LED drive interface wires which supply a large width W of the chip 410, N + the number 1 and the same pitch W _JG. The transparent substrate in the integrated transparent block of Types B, C and D transparent transition circuits is also labeled 413.

A method for arranging a large chip on a non-insulating heat-conducting substrate, comprising a non-insulating heat-conducting substrate, an E-type transparent transition circuit integrated transparent block 470 facing away from the side of the silver paste circuit and closely aligning with the non-insulating heat-conductive substrate; and the LED driving power large chip 410 One side of the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block 470 with the silver paste circuit for butt welding; the side of the LED illumination large chip 420 facing the silver paste circuit closely fits the non-insulated thermal conductive substrate arrangement, The interface wire end is aligned with the E-type transparent transition circuit integrated transparent block 470 output end interface wire end; the LED illumination large chip 420 with the chip side also has an F-type transparent transition circuit integrated transparent block 480, as shown in FIG. 26 and 28; the F-type transparent transition circuit integrates one end of the transparent block 480 with the silver paste circuit surface and the side of the LED illumination large chip 420 with the silver paste circuit is butt welded according to the interface wire, and the other end is further transparent with the E-type transition The side of the circuit integrated transparent block 470 with the silver paste circuit is butt welded to the product by the interface wire.

The non-insulating heat-conducting substrate is made of a metal or non-metal heat-conducting material, and the surface of the LED-illuminated large chip 420 is a mirror surface; the non-insulating heat-conducting substrate may be of a type of the light machine template 43; or the type of the heat-conducting bracket 3 of the light bulb, As shown in FIG. 29, it is a schematic diagram of the structure of the bulb in which the large chip is directly arranged on the heat conducting bracket according to the method of the present invention; or other heat sink-like type, as shown in FIG. 49; for the medium and small LED light machine template 43 The external power supply or signal is directly connected to the LED driving power large chip 410 attached to the optical template 43 through the connector 11 as shown in FIG. 30 and FIG. 31; for the large-sized LED optical module, The external power supply or signal is connected to the transparent transition circuit integrated transparent block 470 through the connector 11 and connected to the transparent circuit 470, and then introduced into the LED driving power large chip 410, as shown in FIG. 27; the LED driving power large chip 410 can be set Transparent cover 410.1; the A product along the LED drive power large chip 410, LED illumination large chip 420, E-type transparent transition circuit integrated transparent block 470 and F-type transparent transition circuit integrated transparent block 480 peripheral seal transparent The glue 45 completes the arrangement of the large chip non-insulated thermally conductive substrate.

The E-type transparent transition circuit integrated transparent block 470 includes a third transparent substrate 470.1. The third transparent substrate 470.1 is printed with a silver paste circuit, the silver paste circuit is an interface wire, and the interface wire has an access end and an output end. The width of the access terminal wire is the same as the width W _{G1 of the} flexible circuit access end or the pad 414.1 connected to the electrical connector 11, the width, the number and the spacing of the interface wires at the output end and the width W of the LED illumination chip 420, The number N+1 is the same as the pitch W _JG , and the interface wire is also connected to the input end of the LED driving power large chip 410, and its width is W _G , as shown in FIG. 32; the F-type transparent transition circuit integrates the transparent block 480 The fourth transparent substrate 480.1 is included. The fourth transparent substrate is printed with a silver paste circuit on the 480.1, the silver paste circuit is an interface wire, the width, the number and the spacing of the interface wires and the width W, the number N+1 and the spacing of the LED illumination large chip 420. W _{JG is the} same, as shown in Figure 33. The transparent transition circuit is integrated with the transparent block to solve the circuit connection problem of the external power source or the signal input LED driving power large chip 410 or the LED driving power large chip output to the LED lighting large chip 420. The transition circuit integrated transparent block of the present invention comprises two kinds of transition circuit integrated transparent blocks: Type 1E: external power source and signal are respectively connected to the LED driving power large chip 410, as shown in FIG. 26 and FIG. 32, wherein the flexible circuit 44 is connected. The width is W _G1 ; the LED driving power large chip 410 wire has a width of W _G and a height of H7; the typical size is: width 12.4 mm, height: H7 = 11.4 mm. 2F type: LED driving power large chip 410 output to LED lighting large chip 420, see Fig. 33, wherein LED driving power large chip 410 wire output width is W, wire spacing is W _JG , height is H8; typical size is: width 12.4 mm, height: H8 is determined by the power of the LED illumination large chip 420.

The other non-insulated heat-conducting substrate of the heat sink type, as shown in FIG. 49, includes a heat sink 103. The heat sink 103 is provided with a fixing groove of the inner snap ring 81 and the inner cover 61, the inner snap ring 81 and the inner cover. The fixing groove of the 61 is fixedly fixed in the fixing groove, and the inner snap ring 81 is secondarily fixed by the screw 12; the inner cover 61 with the phosphor or the transparent plastic with phosphor powder disposed on the surface of the LED illumination large chip 410 Alternatively, the inner ring cover 62 may be disposed between the inner snap ring 81 and the inner cover 61; the lens 7 is adhesively fixed to the inner snap ring 81, and is fixed by the lens retaining ring 8 twice, and the lens retaining ring 8 is attached. The inner ring 63 is fixed by a snap ring fixing screw 14; the heat sink 44 is further connected with the connector 11 and the transparent transition circuit integrated transparent block 470. The connector female connector 10 with a cable is fixed by a cable holder 112 and connected to the connector male end 11.

LED driving method: The mains AC is converted into pulsating direct current through the rectifier bridge. The voltage of the pulsating direct current is greater than zero, less than or equal to the rated maximum working voltage V _WR of the pulsating direct current, and the 3 to 7 segment LED load is set on the pulsating direct current. In the series mode, when the voltage of the pulsating direct current increases, the number of segments of the LED load connected in series increases step by step. When the voltage of the pulsating direct current decreases, the number of segments of the LED load connected in series decreases step by step, and the number of segments of the LED load connected in series is the actual connected pulsation. The number of DC LED load segments. The segment in which the LED load is connected in series is controlled by a switch, and the control node of the switch is a segmentation limit of the voltage, and the number of segments of the voltage corresponds to the number of segments of the LED load. The negative direction of each segment of the LED load is respectively connected to the negative pole of the pulsating direct current through a switch, and then the on/off of each switch is controlled according to the voltage change of the pulsating direct current, and the number of segments of the LED load connected in series is determined by disconnecting some segments of the LED load. change. Set the period of the pulsating DC working voltage V _{W of the} whole pulsating direct current to be greater than V _Wmax , control all switches to open, stop supplying power to all LED loads, and then adjust the maximum allowable pulsating DC of the pulsating DC by externally setting a given voltage V _T The magnitude of the voltage V _Wmax , thereby enabling dimming of the LEDs; and the voltage protection of the LEDs can be achieved in the same way. The switch operates in a pulsating DC voltage rise phase delay time t _m (eg, t _m =0.1 ms) milliseconds; in the pulsating DC voltage drop phase, an advance t _m (eg, t _m =0.1 ms) milliseconds; to obtain a relatively stable LED operating current. By setting the current sensor to measure the effective working current I _W in the circuit, when I _W exceeds the design value KI _WR , all switches are turned off to achieve current protection, and the opening of the switch needs to be restored after the next reloading voltage, where K is the adjustment factor. I _WR is the rated effective working current; two sets of complete circuits with drive and LED load are set to work together at the same time, wherein: 1 set of LED loads have a higher color temperature, when the given voltage V _T value tends to be low, The maximum allowable pulsating DC voltage V _Wmax tends to a high value; and the other set of LED loads have a lower color temperature, and the maximum allowable pulsating DC voltage when the given voltage V _T value tends to be low V _Wmax tends to be low. Adjusting the given voltage V _T value can realize the adjustment of the LED illumination color temperature; setting each segment of the LED load connected in series to be an LED chip set having different maximum carrying voltage values; wherein the number of segments connected in series with the LED load is higher The LED load that enters the active state is set to an LED chipset having a relatively low maximum carrying voltage value, thereby solving the disadvantage of low utilization of the LED chip. The key to the adjustment of the maximum load voltage of each segment of the LED load is to calculate the total maximum load voltage value of the series segment group: 1 with the pulsating DC voltage as the ordinate and the pulsating DC period (180 degrees) as the abscissa; The LED voltage increases the current greatly, which is essentially power damage. Assuming a purely resistive load, the power of the sinusoidal pattern formed by the pulsating DC half-wave is 1 (Fig. 41); 3 is set to 120% of the load-carrying power of the LED load series segment. A rectangular shadow map with an area of 1.2, the ordinate value of the rectangular shadow is the total maximum carrying voltage value of the series segment group; 4 Similarly, when the LED chipset is known to bear the voltage, the graphic area of the chipset can be obtained by drawing (See Figure 42), verify that the sum of the area of the chipset is greater than the pulsating DC sine wave area under the control node of the switch; 5 select the load voltage value of the chipset on the serial segment group by commodity, add up to or greater than the serial The total maximum carrying voltage value of the segment group may be; wherein the LED chip set with a higher carrying voltage value is close to the positive terminal (the initial segment), and the LED chip group with a lower carrying voltage value is close to the negative terminal (the last segment).

Achieve the first method of the LED lighting circuit: LED load anode of a rectifier bridge B input connected to the mains _1, positive output terminal of the rectifier bridge B ₁ is connected to the multi-stage connected in series, each negative electrode of the LED load are respectively connected to the drive power chip connection node U ₁ J _1, J ₂ ... on the J _n, the negative output of the rectifier bridge B ₁ is connected to the driving power chip U ground terminal GND _1, the driving power chip ₁ is also provided on the U coupled All the operating voltage of the LED load detecting foremost end V _W, the driving power chip ₁ is also provided on the U the maximum allowable pulsating DC voltage regulator terminal V _Wmax. The driving power supply chip U ₁ includes a voltage detection and logic switch controller U ₂ , a voltage detection and logic switch controller U ₂ is provided with an operating voltage detecting terminal V _W and a maximum allowable ripple DC voltage regulating terminal V _Wmax ; Nodes J ₁ , J ₂ ... J _n , each of the connection nodes J ₁ , J ₂ ... J _n are respectively connected to the ground GND through the switch tubes K ₁ , K ₂ ... K _n , and each of the switch tubes K ₁ , K The control terminals of ₂ ... K _n are connected to the voltage detection and logic switch controller U ₂ . Each of the connection nodes J ₁ , J ₂ ... J _n are respectively connected to the same merged connection line through the switch tubes K ₁ , K ₂ ... K _n , and then connected to the ground GND through the merged connection line, and merge the connection lines A current detecting circuit is disposed thereon, and an output end of the current detecting circuit is connected to the voltage detecting and logic switch controller U ₂ .

The following is an operation principle of the present invention taking 6 sets of LED loads as an example. That is, n takes a value of 6.

First, the AC AC turns into a pulsating DC after passing through the rectifier bridge. For example: AC220V, 50Hz AC is rectified by the rectifier bridge, see Figure 34, the voltage is half a cycle (180 degrees), and the pulsating DC voltage is 0°. Zero, at 90 degrees, the pulsating DC voltage reaches the maximum value. V _WR is the highest DC 311V. At 180 degrees, the voltage drops to zero again and again.

Between the pulsating DC voltage greater than zero and less than or equal to V _WR , a total of 6 segments of load are set, and a series connection is formed between the segments. As the voltage increases, the number of series (ie, LED load) series increases step by step, and the load voltage is controlled by the switch. Load, see Figure 34 and Figure 37, the voltage switch node is the voltage segmentation limit.

Power Management Operation Mode: The present invention does not design a current control device. The opening and closing of each level of switches depends only on the variation of V _W , see Figures 34, 37 and 38.

When the period is 0 to 90 degrees:

Paragraph 1: the initial working state, ie, the period from the start 0, the switching circuit K ₁ ~ K ₆ is on (the ON), the main current path through the node formed by the switch J ₁ K _1, the rated voltage of the load 1V _WR /6 LED working in series;

Paragraph 2: When V _{W is} greater than or equal to 1V _WR /6, switch K1 is turned off (OFF), the current mainly forms a path through node J2 through switch K2, and the load is composed of LEDs with rated voltage of 2V _WR /6 in series;

Paragraph 3: When V _{W is} greater than or equal to 2V _WR /6, switch K1 is OFF, switch K2 is OFF (OFF), current is mainly formed through node J3 through switch K3, and the load is operated in series by rated voltage of 3V _WR /6. LED composition;

Section 4: When V _{W is} greater than or equal to 3V _WR /6, switches K1 ~ K2 are OFF, switch K3 is OFF (OFF), current is mainly formed through node J4 through switch K4, the load is connected by the rated voltage of 4V _WR /6 series Working LED composition;

Paragraph 5: When V _{W is} greater than or equal to 4V _WR /6, switches K1 ~ K3 are OFF, switch K4 is OFF (OFF), current is mainly formed through node J5 through switch K5, the load is connected by the rated voltage of 5V _WR /6 series Working LED composition;

Section 6: When V _{W is} greater than or equal to 5V _WR /6, switches K1 to K4 are OFF, switch K5 is OFF (OFF), current is formed through node J6 through switch K6, and the load is operated in series by rated voltage of 6V _WR /6. LED composition;

When the switches K1 to K6 are turned off, a shutdown method with a delay of 0.1 ms can be used to obtain a relatively smooth current.

When the cycle is 90 to 180 degrees:

Section 6: In the initial state of operation, the voltage decreases from the maximum value. The switches K1 to K5 in the circuit are in the off state (OFF), the switch K6 is in the on state, and the current is formed through the switch J6 through the node J6. The load is rated by the rated voltage. LED composition of 6V _WR /6 series operation;

Paragraph 5: When V _{W is} less than or equal to 5V _WR /6, switch K5~K6 is turned ON (ON), current mainly forms a path through node J5 through switch K5, and the load is composed of LEDs with rated voltage of 5V _WR /6 working in series;

Section 4: When V _{W is} less than or equal to 4V _WR /6, the switches K4 to K6 are turned ON (ON), the current is mainly formed by the node J4 through the switch K4, and the load is composed of LEDs with a rated voltage of 4V _WR /6 in series;

Section 3: When V _{W is} less than or equal to 3V _WR /6, the switches K3 to K6 are turned ON (ON), the current is mainly formed through the switch J3 through the node J3, and the load is composed of LEDs with a rated voltage of 3V _WR /6 in series;

Section 2: When V _{W is} less than or equal to 2V _WR /6, the switches K2 to K6 are turned ON (ON), the current mainly forms a path through the switch J2 through the node J2, and the load is composed of LEDs with a rated voltage of 2V _WR /6 in series;

Phase 1: When V _{W is} less than or equal to 1V _WR /6, the switches K1 to K6 are turned ON. The current is mainly formed by the node J1 through the switch K1. The load is composed of LEDs with a rated voltage of 1V _WR /6 in series.

When the switches K1 to K6 are turned on, the opening method of 0.1 ms in advance can be used to obtain the phase. For a smoother current.

Dimming operation mode: When externally set a given voltage V _T =0, V _Wmax corresponds to C V _WR , when external voltage is given V _T =5V, V _Wmax corresponds to 0V, and 0≤V _Wmax ≤CV _{WR is set} , C adjustment coefficient , is a multiple of the rated voltage, such as C = 1.12. When V _{W is} greater than V _Wmax , the switches corresponding to each segment will be turned off (OFF) to stop supplying power to the load. Its role is a dimming scheme. Referring to Figures 36, 37 and 38, the adjustment V _{Wmax is} lower than V _WR , the shaded portion of the figure will increase, and the power input to the load will be reduced to achieve the purpose of dimming. Example: When the LED works normally in AC220V mains, when the AC voltage is adjusted to the voltage of AC180V, the shaded part in the figure is the part of the power projection of V _W higher than 254V, from the period of about 55.5 degrees to 124.5 degrees. Since the corresponding switch Kx is off (OFF) during this period, the power consumption of the shaded part (equivalent to 57.0% of the load power of the pulsating DC half-wave under normal mains) will be removed, and this part of the power consumption is not loaded. On the load, the brightness of the load is reduced. When V _Wmax is equal to 0, all switches will be turned off (OFF) and the load supply is zero. Stepless dimming can be achieved without energy consumption.

Voltage protection operation mode: Set V _Wmax =CV _WR . When V _{W is} greater than V _Wmax , the switches corresponding to each segment will be turned off (OFF) to stop supplying power to the load. Referring to FIG. 35, FIG. 37 and FIG. 38, for example, when the commercial power reaches a high voltage of 270V, the shaded portion in the figure is a part of the power generation shadow map in which V _{W is} higher than 348V, and the period is between about 66 degrees and 114 degrees. Since the K1~K6 switch is off (OFF) during this period, the power consumption of the shaded part (equivalent to 50.2% of the load power of the pulsating DC half-wave under normal mains) will be removed, and this part of the power consumption is not loaded. When the load is applied, the load will not be burnt due to overvoltage; when the grid is swelled, the instantaneous spike voltage will be greatly higher than V _Wmax . At this moment, each segment of the switch is in the off state, achieving the purpose of surge protection.

Overcurrent protection operation mode: The present invention has overcurrent protection. Referring to Fig. 38, the current working current I _W measured in the current sensor exceeds the design value KI _WR , K is an adjustment coefficient, for example: setting I _WR = 275 mA, K = 1.2, the logic switch controller will turn off all switches K1 ~ K6 (OFF), open the switch (ON) K1 ~ K6 need to be restored after the next reload power supply.

Color temperature adjustment operation mode: Set 2 sets of complete circuits with drive and LED load to work together at the same time, wherein: 1 set of LED load has higher color temperature, when the externally set given voltage V _T =0, the maximum allowable pulsating DC voltage V _Wmax = CV _WR , the maximum allowable ripple DC voltage V _Wmax =0 when the given voltage V _T = 5; and the other group of LED loads have a lower color temperature, when the externally set given voltage V _T =0, The maximum allowable pulsating DC voltage V _Wmax =0, and the maximum allowable pulsating DC voltage V _Wmax =CV _WR when the given voltage V _T =5. Adjusting the externally set voltage V _T value can realize the adjustment of the LED illumination color temperature. The principle of color temperature adjustment is close to the dimming operation mode. See Figure 38, but in this mode, only the color temperature can not be adjusted.

According to the same principle as above, the load mode can be divided into 3 to 7 segments, the segmentation is small, the circuit is simple, but the current changes greatly, and it is easy to generate low-order harmonics in the power grid, see Fig. 39; complex structure. Generally, 4 to 6 segments are preferred.

Note: V _W - pulsating DC operating voltage (1.4142 * ac voltage); V _WR - pulsating DC rated maximum operating voltage (1.4142 * ac voltage); V _Wmax - maximum allowable pulsating DC voltage (1.4142 * ac voltage); I _W - Effective operating current. I _WR — rated effective operating current.

For example, if the commercial power is AC220, the rectified voltage is DC311V. Taking each group of LED loads as a single chip, each chip is subjected to DC52V; if AC110, the chip is DC26V. Set the load power area of the pulsating DC half-wave to 1, as shown in Figure 40, each LED load (LED modules 1 to 6) is loaded with a large difference in power, and the LED module 1 reaches the pulsating DC half-wave loading power area. 20.68% (84.4% of the rated output of the chip); while the LED module 6 is only 5.11% (19.2% of the rated output of the chip), which is about a quarter of the power of the module 1. After testing, the module 6 The actual brightness is very low; the average power of the entire chipset is 52.4% of the rated output of the chip, and the utilization rate of the chip is low; and the rated output of the chipset (the area of the dotted line) is the loading power area of the pulsating DC half wave. 159%. Due to the excessive amount of chip redundancy, not only the chip is wasted, but also the driving power source is too large and wasted, and the difficulty in arrangement is increased. Therefore, the method of selecting the chip voltage under the constant DC state has certain problems in the pulsating DC state. How to improve the utilization rate of the chip becomes a problem to be solved under the premise of ensuring the safe operation of the chip.

The rated output of the 6 series LED chip arrays is adjusted down to 1.2 times by 1.59 times of the pulsating DC half-wave loading power (the power is greatly increased due to the increase of the LED voltage, which is substantially power-damaged. Setting 1.2 times the power head is sufficient to ensure The LED is not burned. See Figure 41. If the LED chip array chip carrying power (the area of the rectangular shaded area in the figure) is 1.2 times the pulsating DC half-wave loading power (the area of the pulsating DC half-wave area), it can be made from Figure 41. The figure shows that the load voltage of the chip array when the mains is AC220V is DC236V;

Referring to FIG. 42, different voltage values are set for the LED module 1 to the module 6, respectively, and the chip loading power area (shaded portion in the figure) under different load voltage values can be obtained;

Using a 2*52V+4*35V high-voltage chip (module 1 and module 2 is VES-AADBHV45, module 3 to module 6 is ES-AADBHF40) to form a series array, the load voltage of the chip array is adjusted to DC244V; as shown in Fig. 43, the obtained chip array is loaded with a power area of 96.67% of the pulsating DC half-wave power area, and the power of the chip array is close to 1 is ideal; at this time, the power of the LED chip array is the chip array rating. The output is 77.6%; the experimental verification is similar to the estimated value.

The module loading power verification of each voltage segment: set the loading power area of the pulsating DC half wave to be 1, and when the voltage is the ordinate, it is easy to calculate the rated output of the DC52V chip by 26.52%. Similarly, the rated output of the DC35V chip is 17.89%; Figure 43 shows the loaded power of each module of the LED chip array when the mains is AC220V; Table 1 shows that the power of the chip array is pulsating DC half-wave power area 1 when the power is loaded, and the mains voltage is The AC220V, AV246V, AC270V modules are loaded with power. It can be seen from the table that only module 3 is slightly overloaded in DC311V and DC348V, but because module 1 and module 2 have power margin, the experimental proof module 3 can pass.

At other mains voltage levels, the optimization method is referred to above.

The chip load power check under ideal conditions is shown in the following table:

Another LED light machine module includes a transparent light machine template 43 (shown in FIG. 44). The light machine template 43 is printed with a silver paste printed circuit 414, and the light machine template 43 is pasted with a power source driven wafer level chip. 411 and rectifier bridge wafer level chip 412, power drive wafer level chip 411 and rectifier bridge wafer level chip 412 are unpackaged wafer level devices; power drive wafer level chip 411 and rectifier bridge wafer level chip 412 pass Flip-chip soldering (as shown in FIG. 46) or dressing soldering (as shown in FIG. 45) gold wire 417 is soldered to the silver paste printing circuit 414; the optomechanical template 43 is further provided with a flexible turn soldered to the silver paste printing circuit 414. The circuit board 43 is also bonded with an LED chip array; the LED chip array is composed of a plurality of series segments connected in parallel, and each series segment is composed of 3 to 7 (can withstand high voltage) The LED chips 41 are formed in series, and each of the LED chips 41 is soldered to the silver paste printed circuit 414 by flip chip bonding or dressing solder gold wires 417.

The power driving wafer level chip 411, the rectifier bridge wafer level chip 412 and the LED chip 41 are filled with a transparent encapsulant 45 for leveling, and then the type and size and light are used except for the reserved mounting and soldering positions. The same transparent cover 42 of the die plate 43 is capped to form a seal thereon, as shown in FIG. 47; or a power source is driven directly to the wafer level chip 411, the rectifier bridge wafer level chip 412 and the LED chip 41 to form a layer of power. Driving wafer level core The sheet 411, the rectifier bridge wafer level chip 412, and the transparent encapsulant 45 sealed by the LED chip 41 are as shown in FIG.

The method for forming the LED lighting core component by using the foregoing LED light machine module is to install the flexible circuit 44 on the LED light machine module and then insert the inner cover 61 with the phosphor; the inner cover 61 with the phosphor is included The injection molding granule of the phosphor is mixed with the transparent injection granule containing no phosphor; the mixing ratio is configured as needed, and then obtained by injection molding; wherein the phosphor-containing injection granule is 20 to 30% phosphor The body is mixed with 70-80% transparent injection-molded pellets, and is re-formed into an injection-molded pellet after hot-melting; the phosphor is selected from a phosphor having an afterglow time of more than 8 ms.

Claims

The LED lighting large chip is characterized in that: a first transparent substrate (421) having a width W is fixed, and the first transparent substrate (421) is provided with N+1 parallel interface wires, and the first transparent substrate (421) There are N LED chips (41) to form a series of LED chips, each LED chip (41) is located between two adjacent interface wires, and the spacing between two adjacent interface wires is W JG equals W minus The interface wire width is divided by N, and the positive and negative poles of each LED chip (41) are respectively connected to two adjacent interface wires; and a plurality of LED series groups are connected in parallel at the same time, so that the first transparent substrate (421) An N-row multi-row LED chip array which can extend in the longitudinal direction of the first transparent substrate (421) is formed, and N is an integer between 3 and 7.
The LED lighting large chip according to claim 1, wherein the LED chip array and the interface wire are formed on the first transparent substrate (421) by using a transparent substrate as a thin epitaxial layer. Epitaxial wafer, epitaxial wafer adopts mature chip manufacturing technology, layered growth circuit and LED chip, and then cut to form LED illumination large chip with width W, wherein the grown circuit includes interface wire and connection chip connecting LED chip and interface wire a wire, a transparent substrate as a substrate; the chip diode may be a transparent electrode to increase the light-emitting area of the chip because it does not need to be soldered; the mature manufacturing technology of the chip is layered by using an organometallic chemical vapor deposition device. a process of coating silicon, sizing, lithography, etching, coating, alloying, and grinding; or mounting the LED chip array on the first transparent substrate (421) of the silver paste circuit (414) by conventional techniques. And connected to the silver paste circuit (414) on the first transparent substrate (421) by flip chip soldering or gold wire assembly soldering to obtain a large LED illumination chip, a silver paste brush circuit (414) And an interface connector including a wire connecting the LED chip and the chip lead wire interfaces.
The LED driving power large chip is characterized in that: a second transparent substrate (413) having a width W is fixed, a second transparent substrate (413) is printed with a silver paste circuit (414), and a silver paste circuit (414) is formed thereon. The interface wire has an access end and an output end; the width of the access end is the same as the width W G of the optical template (43) wire access end or has a pad connected to the electrical connector; the silver paste circuit at the output end (414 There are N+1 parallel interface wires, the spacing between adjacent two interface wires W JG is equal to W minus the width of the interface wires and then divided by N; the second transparent substrate (413) is pasted with unencapsulated power supply crystal A circular chip (411) and a rectifier bridge wafer level chip (412), and then soldering the unpackaged power source driving wafer level chip (411) and the rectifier bridge wafer level chip (412) to the second transparent substrate (413) The width of the interface wire end of the second transparent substrate (413) having the output end is the same as the width W of the LED illumination large chip, and the height is H2; the purpose of the interface wire on the output end of the LED driving power supply chip is to connect the above The LED illuminates the chip array on the large chip; N is an integer between 3 and 7.
An LED light machine module is characterized in that it is assembled according to the following method: according to the power requirement, the LED lighting large chip (420) is cut, and the LED lighting large chip (420) cut into different lengths has different Power, the silver paste circuit (414) is printed on the optomechanical template (43), and the silver paste circuit (414) on the optomechanical template (43) also has interface wires, and the number and spacing are matched with the LED illumination large chip (420). The interface wires are the same; the side of the LED illumination chip (420) with the chip is attached to the side of the optical template (43) with the silver paste circuit (414) for butt welding, and the interface wires of the two are soldered correspondingly; The side of the power large chip (410) with the silver paste circuit (414) is attached to the side of the optical template (43) with the silver paste circuit (414) for butt welding; thereby, the LED illumination large chip (420) and the LED driving power source are large. The chip (410) is turned on; finally, the gap between the LED illumination large chip and the driving power large chip is encapsulated by the transparent glue; the LED chip carries a high voltage of DC3.2V or greater than DC10V.
The large-chip horizontally arranged LED light machine module is characterized in that it comprises a transparent light machine template (43) printed with a silver paste circuit (414), and a silver paste circuit (414) is formed on the light machine template (43). The width and spacing of the interface wires are the same as the width W and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); for a large optomechanical module, the power is larger, or The optical module (43) needs to be connected to more than one LED driving power large chip (410) through the transition circuit integrated transparent block (430); the LED driving power large chip (410) and the LED lighting large chip (420) are further connected. A side of the transparent optomechanical template (43) with the silver paste circuit (414) with the silver paste circuit (414) is soldered to the LED illuminator module by the interface wires.
The large chip horizontal arrangement LED light machine module according to claim 5, wherein: for the medium and small LED light machine modules, the external power source or signal is directly soldered to the light machine template through the connector (11) ( 43) The LED driver power supply chip (410) is connected; for the large LED light machine module, the optical machine template (43) is also soldered with a flexible circuit (44), an external power source or signal through the connector (11) The connection flexible circuit (44) is connected to the LED driving power large chip (410) soldered on the optical template (43); for the large power of the large LED optical module, the optical template (43) Solder one or more LED driver power chip (410) and one or more LED lighting chip (420); last LED driver power chip (410), LED lighting chip (420) And/or the transition circuit integrates the transparent block (430) to seal the transparent glue (45) to obtain the LED light machine module.
The large chip horizontal arrangement LED light machine module according to claim 5, wherein the transparent transition circuit integrated transparent block (430) comprises a third transparent substrate (431), and a third transparent substrate (431) Printed with a silver paste circuit (414), the silver paste circuit (414) has an interface wire, the interface wire has a set of access terminals and more than one set of output terminals; the width of the access end and the optical machine template (43) wire access end the same as the width W G; the width of the interface wires to the LED driving power output of the large chip (410) access the same end of the width W G; the silver paste printed circuit (414) integrated circuit transparent to the transition block (430) on one side of the light The side of the machine template (43) with the silver paste circuit (414) is butt welded according to the interface wire; the transition circuit integrated transparent block (430) is used to connect an external power source or signal to one or more LED drive power large chips (410) Then, the LED driving power large chip (410) is output to the LED lighting large chip (420).
The LED light machine module vertically arranged on the large chip is characterized in that it comprises a transparent light machine template (43) printed with a silver paste circuit, and the silver paste circuit forms an interface wire on the light machine template (43), and the interface wire thereof The width and spacing are the same as the width W and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); the transparent block is integrated by one or more L-shaped transparent transition circuits (460) The LED lighting large chip (420) is connected to the optomechanical template (43) perpendicular to the optomechanical template (43); or for the large optomechanical template, the LED driving power is integrated by the transparent transparent block (440) of the B-type transparent transition circuit Large chip (410) and one or more L-shaped C-type transparent transition circuit integrated transparent block (450) connect one or more LED lighting large chips (420) perpendicular to the optical template (43) to the optical machine On the template (43); the side of the LED driver power chip (410) with the silver paste circuit and the side of the transparent machine template (43) with the silver paste circuit are soldered to the optical module by the interface wire.
The large chip vertical arrangement LED light machine module according to claim 8, wherein: for medium and small LED light machine modules, an external power source or signal is directly soldered to the light machine template 43 through the connector (11). The upper LED driving power supply chip (410) is connected; for the large LED optical machine module, the optical machine template (43) is also soldered with a flexible circuit 44, and the external power supply or signal is connected to the flexible circuit through the connector (11). (44) is connected to the LED driving power large chip (410) soldered on the optomechanical template 43; finally, the LED driving power large chip (410), the LED lighting large chip (420) and the B-type transparent transition circuit are integrated and transparent. Block (440), C-type transparent transition circuit integrated transparent block (450) or D-type transparent transition circuit integrated transparent block (460) peripheral seal transparent adhesive (45) package complete LED light machine module.
The large-chip vertical arrangement LED light machine module according to claim 8, wherein the D-type transparent transition circuit integrated transparent block (460) comprises an L-shaped transparent substrate, and a silver paste circuit is printed on the transparent substrate. The silver paste circuit is an L-shaped interface wire, and the width, the number and the spacing of the interface wires are the same as the width W, the number N+1 and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); The C-type transparent transition circuit integrated transparent block (450) comprises an L-shaped transparent substrate, and a silver paste circuit is printed on the transparent substrate, and the silver paste circuit is a pair of interface wires of L-shaped space, and the interface wires of each group The width, number and spacing are the same as the width W, the number N+1 and the spacing W JG of the LED lighting large chip (420) and the LED driving power large chip (410); the LED lighting large chip (420) with silver paste One side of the circuit is integrated with the L-shaped transparent transition circuit. The transparent block with the silver paste circuit is butt welded by the interface wire; the L-shaped transparent transition circuit is integrated with the transparent block with the other side of the silver paste circuit and the optomechanical template (43). The side with the silver paste circuit is butt welded according to the interface wire; The interface wire of the integrated transparent block (440) has a set of access terminals and more than one set of output terminals, and the width, the number and the spacing of the interface wires and the width W and the number N of the LED driving power large chip (410) +1 is the same as the spacing W JG .
A method for arranging a large chip on a non-insulating thermally conductive substrate, characterized in that: a side of the E-type transparent transition circuit integrated transparent block (470) facing away from the silver paste circuit (414) is closely attached to the non-insulated thermally conductive substrate; One side of the power large chip (410) with the interface wire circuit is attached to the side of the E-type transparent transition circuit integrated transparent block (470) with the silver paste circuit; the LED illumination large chip (420) is facing away from the silver paste circuit (414) One side closely conforms to the non-insulated thermal conductive substrate arrangement; the interface wire end of the LED illumination large chip (420) is aligned with the transparent transition circuit integrated transparent block (470) output end interface wire end; the LED illumination large chip (420) The side with the chip is further provided with an F-type transparent transition circuit integrated transparent block (480); the F-type transparent transition circuit integrates the transparent block (480) with one end of the silver paste circuit (414) surface and the LED illumination large chip (420) The side with the silver paste circuit (414) is butt welded according to the interface wire, and the other end is integrated with the E-type transparent transition circuit. The transparent block (470) with the silver paste circuit (414) is soldered to the interface by the interface wire. Module.
The method for arranging a large chip on a non-insulating heat-conducting substrate according to claim 11, wherein the non-insulating heat-conducting substrate is made of a metal or non-metal heat-conductive material, and the bonding surface of the LED illumination chip (420) is mirror-finished. The non-insulating heat-conducting substrate adopts the type of the light machine template (43), or the type of the heat-conducting bracket (3) of the bulb, or the type of the heat sink; for the medium-sized and small-sized LED light machine module, the external power source or The signal is directly soldered to the LED driving power source attached to the optomechanical template (43) through the connector (11). The large chip (410) is connected; for the large LED light machine module, the external power source or signal is connected to the flexible circuit (44) through the connector (11) to the E-transparent transition circuit integrated transparent block (470). Introducing an LED driving power large chip (410); the LED driving power large chip (410) is also provided with a transparent cover (410.1); the optical module is along the LED driving power large chip (410), LED lighting large chip (420), E-type transparent transition circuit integrated transparent block (470) and F-type transparent transition circuit integrated transparent block (480) peripheral sealing transparent adhesive (45) to obtain a complete package of LED light machine module.
The method for arranging a large chip on a non-insulating thermally conductive substrate according to claim 11, wherein the E-type transparent transition circuit integrated transparent block (470) comprises a third transparent substrate (470.1), and the third transparent substrate (470.1) printed with a silver paste circuit (414), the silver paste circuit (414) forms an interface wire, the interface wire has an access end and an output end; the width of the access end interface wire is the same as the width W G1 of the flexible circuit access end Or there is a pad (414.1) connected to the electrical connector (11), the width, number and spacing of the interface wires at the output are the same as the width W, the number N+1 and the spacing W JG of the LED illumination chip (420), the interface The wire is also connected to the input end of the LED driving power large chip (410), and has a width W G ; the F-type transparent transition circuit integrated transparent block (480) includes a fourth transparent substrate (480.1), and a fourth transparent substrate The upper (480.1) is printed with a silver paste circuit, and the silver paste circuit is an interface wire. The width, number and spacing of the interface wires are the same as the width W, the number N+1 and the pitch W JG of the LED illumination large chip (420).
The method for arranging a large chip on a non-insulating thermally conductive substrate according to claim 11, wherein when the non-insulating thermally conductive substrate is in the form of a heat sink, the non-insulating thermally conductive substrate comprises a heat sink (103), a heat sink ( 103) a fixing groove is provided on the inner snap ring (81) and the inner cover (61) with the phosphor, and the fixing groove of the inner snap ring (81) and the inner cover (61) is fixedly fixed in the fixing groove, the inner card The ring (81) is secondarily fixed by a screw (12); or an inner ring cover (62) is provided between the inner snap ring (81) and the inner cover (61); the lens (7) is adhesively fixed to the inner snap ring (81) upper and fixed by the lens retaining ring (8), the lens retaining ring (8) is fixed to the inner snap ring (81) by a snap ring fixing screw (14); the heat sink is further provided The connector (11), the flexible circuit (44) is connected to the connector (11) and the transparent transition circuit integrated transparent block (470).
The driving method of the LED is characterized in that: the mains AC is converted into a pulsating direct current through a rectifier bridge, the voltage of the pulsating direct current is greater than zero, less than or equal to the rated maximum working voltage VWR of the pulsating direct current, and 3 to 7 segments of LEDs are set on the pulsating direct current. Load, each segment of LED load is connected in series to form an LED load series segment group. When the voltage of the pulsating direct current increases, the number of segments of the LED load connected in series increases stepwise, when the voltage of the pulsating direct current decreases, The number of segments in which the LED load is connected in series is gradually reduced, and the number of segments in which the LED load is connected in series is the number of LED load segments actually connected to the pulsating direct current.
The LED driving method according to claim 15, wherein the number of segments of the LED load connected in series is controlled by a switch, the control node of the switch is a segmentation limit of the voltage, and the number of segments of the voltage is in series with the LED load. The number of segments corresponds to the number of segments of the LED load connected in series. The negative direction of each LED load is respectively connected to the negative pole of the pulsating direct current through a switch, and then the on/off of each switch is controlled according to the voltage change of the pulsating direct current. The number of segments of the LED load series is changed by breaking a certain number of switches.
The LED driving method according to claim 16, wherein the setting of the pulsating DC operating voltage V W of the pulsating direct current is greater than the V Wmax period, controlling all the switches to be turned off, stopping supplying power to all the LED loads, and realizing the LEDs. Voltage and surge protection; adjusting the maximum allowable pulsating DC voltage V Wmax of the pulsating direct current by externally setting a given voltage V T , thereby realizing the adjustment of the illumination brightness of the LED.
The LED driving method according to claim 16, wherein the switch operates at a delay of t m milliseconds in a pulsating DC voltage rising phase; in the pulsating DC voltage falling phase, an action of t m milliseconds is advanced; to obtain a relatively stable LED operating current.
The LED driving method according to claim 16, characterized in that the effective working current I W in the circuit is measured by setting a current sensor. When I W exceeds the design value KI WR , all switches are turned off to achieve current protection, and the switch is turned on. It needs to be restored after the next reload of the voltage, where K is the adjustment factor and I WR is the rated effective operating current.
The LED driving method according to claim 16, wherein two sets of complete circuits of the belt drive and the LED load are simultaneously operated together, wherein: one set of LED loads has a higher color temperature when said given voltage V When the T value tends to be low, the maximum allowable pulsating DC voltage V Wmax tends to be high; and the other group of LED loads have a lower color temperature, when the given voltage V T value tends to be low, The maximum allowable pulsating DC voltage V Wmax tends to be low. Adjusting the given voltage V T value can achieve adjustment of the LED illumination color temperature.
The LED driving method according to claim 15, wherein each of the LED loads connected in series is an LED chip set having different maximum carrying voltage values, and the LED load serial segment group capable of operating under the switch control Obtain an operating current curve close to the ideal sine wave.
The LED driving method according to claim 21, wherein the method for adjusting the maximum load voltage of each segment of the LED load is: 1 using a pulsating DC voltage as an ordinate and a pulsating DC period as an abscissa; 2 assuming Pure resistive load, its power The sinusoidal pattern formed by the pulsating DC half-wave has an area of 1, and is plotted; 3 sets the carrying capacity of the LED load series segment group to be 120% of the pure resistive load, and makes a rectangular shadow map with an area of 1.2, and the ordinate of the rectangular shadow. The value is the total maximum carrying voltage value of the series segment group; 4 Similarly, when the LED load carrying voltage is known, the graph area of the LED load can be plotted, and the sum of the area of the LED load is verified step by step. The pulsating DC sine wave area under the node; 5 the load voltage value of each LED load on the LED load series segment group is selected, and the sum is greater than or equal to the total maximum carrying voltage value of the series segment group; wherein, the carrying voltage value is higher The LED load is close to the positive terminal, and the LED load carrying the lower voltage value is close to the negative terminal.
An LED lighting circuit for implementing the method according to any one of claims 15 to 22, characterized in that it comprises a rectifier bridge (B 1 ) connected to the mains at the input end, and the anode of the output end of the rectifier bridge (B 1 ) is connected at 3 to The positive pole of the 7-segment LED load, the negative pole of each LED load is respectively connected to the connection node (J 1 , J 2 ... J n ) of the driving power chip (U 1 ), and the output of the rectifier bridge (B 1 ) the negative terminal is connected to the chip driving power source (U 1) a ground terminal (GND), said driving power chip (U 1) is also provided on the foremost end all connected to the LED load operating voltage detection terminal (V W), the The maximum allowable ripple DC voltage regulation terminal (V Wmax ) is also provided on the driving power supply chip (U 1 ).
The LED lighting circuit according to claim 23, wherein said driving power supply chip (U 1 ) comprises a voltage detecting and logic switching controller (U 2 ), a voltage detecting and a logic switching controller (U 2 ) There are working voltage detection terminal (V W ) and maximum allowable ripple DC voltage regulation terminal (V Wmax ); also includes connection nodes (J 1 , J 2 ... J n ), each connection node (J 1 , J 2 ... J n ) are respectively connected to the ground (GND) through the switch tube (K 1 , K 2 ... K n ), and the control terminals of each switch tube (K 1 , K 2 ... K n ) are connected to the voltage detection and logic switch On the controller (U 2 ).
The LED lighting circuit according to claim 24, wherein each of said connection nodes (J 1 , J 2 ... J n ) are respectively connected to the same strip through switch tubes (K 1 , K 2 ... K n ) The merged connection line is connected to the ground terminal (GND) through the merged connection line, and the current detection circuit is provided on the merged connection line, and the output end of the current detection circuit is connected to the voltage detection and logic switch controller (U 2 ). The LED optomechanical module according to claim 3, wherein the templating template (43) is made of a sheet of non-metallic transparent material, which is used to warm the thin sheet to a softening point of the near material. The mold is stamped and formed by stamping equipment.
A method for assembling an LED lighting core component using the LED light machine module according to any one of claims 4 to 25: a flexible circuit (44) is disposed on the LED light machine module, and the inner cover with phosphor is mounted (61) ); the inner cover (61) with phosphor is fluorescent The powdered injection granules are mixed with the transparent injection-molded granules without phosphor; the mixing ratio is configured as needed, and then obtained by injection molding; wherein the phosphor-containing injection granules are 20 to 30% phosphor powder It is mixed with 70-80% transparent injection-molded pellets, and is re-formed into injection-molded pellets after hot-melting; phosphors with phosphors with an afterglow time greater than 8ms are selected.
The LED light machine module is characterized in that it comprises a transparent light machine template (43), a silver paste printing circuit (414) is printed on the light machine template (43), and a power driving crystal is pasted on the light machine template (43). Circular chip (411) and rectifier bridge wafer level chip (412), power drive wafer level chip (411) and rectifier bridge wafer level chip (412) are unpackaged wafer level devices; power drive wafer level The chip (411) and the rectifier bridge wafer level chip (412) are soldered to the silver paste printed circuit (414) by flip chip bonding or dressing solder gold wires (417); the illuminating template (43) is also bonded with LEDs The chip array is composed of a plurality of series segments connected in parallel, and each series segment is composed of 3 to 7 LED chips (41) connected in series, and each LED chip (41) is flip-chip welded or assembled. The gold wire (417) is soldered to the silver paste printed circuit (414).
The LED light machine module according to claim 27, wherein said power source driving wafer level chip (411), rectifier bridge wafer level chip (412) and LED chip (41) are filled with a leveling device for leveling The transparent encapsulant (45) is then sealed with the same transparent cover (42) of the type and size of the optomechanical template (43) except for the reserved mounting and soldering locations; or directly on the power supply The driving wafer level chip (411), the rectifier bridge wafer level chip (412) and the LED chip (41) form a layer to drive the wafer level chip (411), the rectifier bridge wafer level chip (412) and the LED chip. (41) Sealed transparent sealant (45).