CN103968286A - LED light machine module with horizontally arranged big chips - Google Patents
LED light machine module with horizontally arranged big chips Download PDFInfo
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- CN103968286A CN103968286A CN201410213295.0A CN201410213295A CN103968286A CN 103968286 A CN103968286 A CN 103968286A CN 201410213295 A CN201410213295 A CN 201410213295A CN 103968286 A CN103968286 A CN 103968286A
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Abstract
The invention discloses an LED light machine module with horizontally arranged big chips. The LED light machine module with the horizontally arranged big chips comprises a transparent light machine template (43) printed with a silver slurry circuit (414), an interface wire of the silver slurry circuit (414) is formed on the light machine template (43), and the width and the spacing of the interface wire are the same as the width W and the spacing WJG of an LED lighting big chip (420) and LED drive power big chips (410); for large light machine modules of larger powers, the light machine template (43) needs to be connected with one or more LED drive power big chips (410) through a transition circuit integration transparent block (430); an LED light machine module is formed by interface wire butt welding of the LED drive power big chips (410) with the face of the transparent light machine template (43) with the silver slurry circuit (414) of the LED lighting big chip (420).
Description
Technical field
The present invention relates to the horizontally disposed LED ray machine module of a kind of large chip, belong to LED lighting technical field.
Background technology
The Chinese patent application such as application number 201310140124.5,201310140138.7,201310140150.8,201310140105.2,201310140134.9,201310140106.7,201310140151.2,201310140136.8 disclose multiple ray machine module technical schemes that can use on LED bulb general and that exchange.These technology are the Lighting Industry framework of setting up centered by LED bulb, and the basic concept that makes LED bulb (lighting source), light fixture, illumination control become the end product of independent production, application is laid a good foundation.But above-mentioned patent not yet solves the problem of the built-in driving power of ray machine module.
Existing LED driving power mostly is Switching Power Supply, and volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, its volume is still not enough to little of being placed into ray machine module internal.
LED illumination provides LED chip to start from chip factory need to be through a series of such as paster to illuminating lamp, die bond, welding, encapsulation, color-division, drive design, heat dissipation design, complicated and the tediously long Production design process such as Design of Luminaires, owing to there being chip layout design, many uncertainties such as heat conductive design and power drives design, this industry structure centered by LED chip is difficult to realize light source (bulb) standardization under the pattern of replaceable light source, finally causing the LED lamp in terminal market is main body mainly with the overall structure lamp of non-exchange light source, the industry complexity and the industrial concentration that has reduced illuminating product of illuminating product are increased.
Further creation idea advanced person, the built-in driving power of easier standardized LED bulb ray machine module and LED illumination chip organization plan are of far-reaching significance for large-scale promotion LED illumination.
Summary of the invention
The object of the invention is to, provide a kind of large chip horizontally disposed LED ray machine module.It is that one is more easily standardized, the LED ray machine module of built-in driving power and LED illumination chip structure, and it is structurally conducive to the standardization of LED illumination, promotes on a large scale.
Technical scheme of the present invention: the LED ray machine module that large chip is horizontally disposed, be characterized in: comprise the transparent ray machine template that is printed on silver slurry circuit, silver slurry circuit is formed with interface lead in ray machine template, width W and the spacing W of the width of its interface lead and spacing and LED illumination large chip and LED driving power large chip
jGidentical; Larger for power in large-scale ray machine module, or also need by the integrated transparent block of transition circuit, the ray machine template LED driving power large chip above with 1 to be connected; Again the one side of the transparent ray machine Form board tape silver of the one side slurry circuit of LED driving power large chip and LED illumination large chip band silver slurry circuit is obtained to the horizontally disposed LED ray machine module of large chip by interface lead butt welding.
In the horizontally disposed LED ray machine of above-mentioned large chip module, for medium and small LED ray machine module, external power source or signal directly access from the LED driving power large chip that is welded on ray machine template by connector; For large-scale LED ray machine module, in ray machine template, be also welded with flexible circuit, external power source or signal connect flexible circuit by connector and are linked on the LED driving power large chip being welded in ray machine template; Larger for power in large LED ray machine module, in ray machine template, be welded with one and above LED driving power large chip and one and above LED illumination large chip; Also can along LED driving power large chip, LED illumination large chip and or integrated transparent block week of transition circuit banding transparent adhesive tape obtain LED ray machine module.
In the horizontally disposed LED ray machine of aforesaid large chip module, the described integrated transparent block of transparent transition circuit comprises the 3rd transparency carrier, on the 3rd transparency carrier, be printed with silver slurry circuit, silver slurry circuit has interface lead, and interface lead has 1 group of incoming end and more than 1 group output; The width W of the width of incoming end and ray machine template wire incoming end
gidentical; The incoming end width W of the interface lead width of output and LED driving power large chip 410
gidentical; To in integrated transition circuit transparent block, be printed with the silver-colored one side of starching circuit of the silver slurry one side of circuit and the band of ray machine template by interface lead butt welding.The integrated transparent block of transition circuit is used for external power source or signal to access more than one LED driving power large chip, then outputs on LED illumination large chip by LED driving power large chip.It has solved the circuit requirement due to LED ray machine module, the circuit that makes external power source or signal access LED driving power large chip or LED driving power large chip output to LED illumination large chip need relate to printed circuit two-sided in ray machine template and can realize, because the back of ray machine template is generally used held against heat sink, and radiator is made of metal mostly, the back of ray machine template needs insulation, cannot realize the problem of circuitron.
In the horizontally disposed LED ray machine of aforesaid large chip module, described LED illumination large chip comprises that a width is fixed as the first transparency carrier of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier is provided with N LEDs chip and forms LED chip series connection group, every LEDs chip is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N), and the both positive and negative polarity of every LEDs chip is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make to form on transparency carrier the LED chip array of the N row multirow that can extend on transparency carrier length direction; N is the integer between 3 to 7; In the time setting up LED ray machine module, according to power needs, LED illumination large chip to be cut out, the LED illumination large chip that is cut into different length has different power; Described LED chip carrying voltage is about DC3.2V (suitably adjusting according to actual conditions) or is greater than the high voltage of DC10V.
In the horizontally disposed LED ray machine of aforesaid large chip module, described LED chip array and the interface lead formation method on transparency carrier is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial layer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and substrate is as the first transparency carrier; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is: adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier that produces silver slurry circuit, and be connected with the silver slurry circuit on the first transparency carrier by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit comprises interface lead and the wire that is connected chip.
In the horizontally disposed LED ray machine of aforesaid large chip module, described LED driving power large chip comprises that width is fixed as the second transparency carrier of W, and transparency carrier is printed with silver slurry circuit, on silver slurry circuit, has interface lead, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template wire incoming end
gidentical or have a pad being connected with connector; In the interface lead of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); On the second transparency carrier, first paste power drives wafer stage chip and the rectifier bridge wafer stage chip of un-encapsulated, then the power drives wafer stage chip of un-encapsulated and rectifier bridge wafer stage chip are welded on the second transparency carrier, the second transparency carrier has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2; On LED driving power large chip, the purposes of interface lead is for connecting chip array on described LED illumination large chip.
LED driving method on described LED driving power large chip is: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip, and the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR, N section LED load is set on Rectified alternating current; N is the integer between 3 to 7; Each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count of power drives wafer stage chip control LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.Civil power AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, and voltage is the wavy curve of half period (180 degree), cycle pulsating dc voltage in the time that 0 spends is zero, and in the time that 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
In the horizontally disposed LED ray machine of aforesaid large chip module, the hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the voltage change of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.LED load can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger; Segmentation is many, circuit structure complexity.Generally get 4～6 sections for good.
In the horizontally disposed LED ray machine of aforesaid large chip module, set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current
wmaxsize, thereby realize luminosity adjustment to LED.
In the horizontally disposed LED ray machine of aforesaid large chip module, by being set, current sensor records effective operating current I in circuit
w, work as I
wexceed design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
In the horizontally disposed LED ray machine of aforesaid large chip module, described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
In the horizontally disposed LED ray machine of aforesaid large chip module, each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
In the horizontally disposed LED ray machine of aforesaid large chip module, the method for adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
In the horizontally disposed LED ray machine of aforesaid large chip module, the material of described ray machine template is that thin slice transparent non-metallic material is (as SiO
2, Al
2o
3deng), it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.(material is easy crisp and hardness is higher.While like this can only cutting mode being processed into ray machine shape of template, cost is higher.)
Use aforesaid LED ray machine module to set up the method for LED illumination core component: on LED ray machine module, flexible circuit to be set, or to be also covered with after transparent cover plate, pack the inner cover with fluorescent material into; That the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed with the inner cover of fluorescent material; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
Compared with prior art, ray machine module of the present invention goes for all kinds of bulb patents of inventor's earlier application, original ray machine module in replacement bulb.Ray machine module of the present invention structurally can built-in power and LED illumination chip, and volume is little, is easy to realize standardization.The present invention can change existing industry structure centered by LED chip, LED ray machine module of the present invention can be to realize light source (bulb) standardization under the pattern of replaceable light source, thereby can reduce the industry complexity of illuminating product and reduce the industrial concentration of illuminating product.
Under the driving of LED power supply large chip, LED illumination large chip is designed to fixing width W, and length determines according to the specification of manufacturing equipment, with time be divided into different length.LED illumination large chip need not cut into grade size for single led chip like this, the mechanical property requirement to substrate by reduction when chip manufacturing, high purity aluminium oxide that makes similar polycrystalline etc. enters the range of choice of substrate, has reduced significantly the manufacturing cost of LED illumination chip.
Every LEDs chip the two poles of the earth in LED illumination large chip are without welding, and the less while that electrode can do also can adopt the scheme of transparency electrode, can effectively increase the light-emitting area of chip and improve luminous efficiency.
From chip factory, LED illumination large chip only need can directly mount and be welded in ray machine template or bulb heat conduction support in conjunction with power supply large chip.LED illumination production procedure is short and simple.Meanwhile, large chip is by using power segmentation cutting, and design, to produce in the whole process of product easily definite factor more, is convenient to it to control to realize standardized work.
Can meet majority of illumination application requirements by the illumination large chip of cutting apart with power, illumination large chip non-like this cutting, a limited number of is easily realized the industrial concentration of scale, will significantly reduce the manufacturing cost of illuminating product.
The present invention has changed the existing encapsulation industrial concept of LED, after illumination large chip adopts upside-down mounting, only needs simplified package large chip periphery; While adopting formal dress, can adopt the techniques such as cover plate encapsulation; Get around external patent barrier.
And because existing LED driving power mostly is Switching Power Supply, volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, is then welded on PCB circuit board, its volume is still not enough to little of being placed into ray machine module internal.This thinking is difficult to make the microminiaturization of LED driving power, lightweight and transparence, cannot be placed in ray machine module, finally cannot realize civil power at LED bulb general and that exchange and directly access.
Adopt the power supply large chip of actuation techniques of the present invention can meet LED illumination application as the various primary demands of driving, light modulation, overvoltage and surge protection, overload etc.; and that volume can be done is less, to such an extent as to driving power can be put into even ray machine module internal of bulb inside.This has very important significance to throw light on low cost, miniaturization of LED.The present invention promoted LED chip towards integrated future development, the appearance of the large chip that makes to throw light on becomes a reality.The common use of the two will further promote the fast development of LED Lighting Industry.
In addition, the present invention is converted into Rectified alternating current by rectifier bridge by civil power, voltage in each cycle is divided into multistage by phase place simultaneously, and utilize the different characteristic of voltage in multistage, use switch to regulate being connected in series into the hop count of the LED load of duty, thereby make LED load enter intelligentized operational mode, this operational mode can meet LED chip power supply, and this LED type of drive of the present invention can greatly reduce the complexity of driving power, thereby make the built-in driving power of LED ray machine module become possibility, it is significant that this realizes larger versatility and interchangeability for LED bulb.
Brief description of the drawings
Fig. 1 is the circuit diagram in the small-sized ray machine template of the embodiment of the present invention;
Fig. 2 is the circuit diagram in the medium-sized ray machine template of the embodiment of the present invention;
Fig. 3 is the small-sized ray machine module schematic diagram of the embodiment of the present invention;
Fig. 4 is the medium-sized ray machine module schematic diagram of the embodiment of the present invention;
Fig. 5 is the circuit diagram in the large-scale ray machine template of the embodiment of the present invention;
Fig. 6 is the circuit diagram in the powerful large-scale ray machine template of the embodiment of the present invention;
Fig. 7 is the large-scale ray machine module schematic diagram of the embodiment of the present invention;
Fig. 8 is the powerful large-scale ray machine module schematic diagram of the embodiment of the present invention;
Fig. 9 is the integrated transparent block structural representation of transition circuit of the present invention;
Figure 10 is the structural representation of embodiment of the present invention LED illumination large chip;
Figure 11 is the structural representation of embodiment of the present invention low-power LED driving power large chip;
Figure 12 is the structural representation of the ray machine core component of the embodiment of the present invention;
Figure 13 is the LED voltage and current waveform of the embodiment of the present invention;
Figure 14 is the extra-high pressure operate power oscillogram of the embodiment of the present invention;
The light modulation operate power oscillogram of Figure 15 embodiment of the present invention;
The circuit connection diagram of Figure 16 embodiment of the present invention;
The driving power chip internal circuit diagram of Figure 17 embodiment of the present invention;
The LED voltage and current waveform of 3 sections of loads of Figure 18 embodiment of the present invention;
The LED chip array module power of Figure 19: embodiment of the present invention DC52V series connection loads distribution map;
Figure 20: embodiment of the present invention LED chip array carrying voltage tentative calculation figure;
Figure 21: single DC52V chip bearing power tentative calculation figure of the embodiment of the present invention;
The LED chip array module power of Figure 22: embodiment of the present invention 2*52V+4*35V series connection loads distribution map;
Figure 23 is the structural representation of embodiment of the present invention high-power LED driving power source large chip.
Being labeled as in accompanying drawing: 41-LED chip, 43-ray machine template, 43.1-ray machine template fixing hole, the flexible built-up circuit of 44-, 44.1-solder joint, the transparent sealing of 45-, the inner cover of 61-with fluorescent material, 410-LED driving power large chip, 410.1-transparent cover plate, 411-driving power wafer stage chip, 412-rectifier bridge wafer stage chip, 413-the second transparency carrier, 414-silver slurry circuit, 414.1-pad, the 420-LED large chip that throws light on, 421-the first transparency carrier, the integrated transparent block of 430-A type transition circuit.431-the 3rd transparency carrier.
Below in conjunction with drawings and Examples, the present invention is further illustrated, but not as the foundation to the present invention's restriction.
Embodiment.The LED ray machine module that large chip is horizontally disposed, comprise the transparent ray machine template 43 that is printed on silver slurry circuit 414, silver slurry circuit 414 is formed with interface lead in ray machine template 43, width W and the spacing W of the width of its interface lead and spacing and LED illumination large chip 420 and LED driving power large chip 410
jGidentical; Larger for power in large-scale ray machine module, or also need by the integrated transparent block 430 of transition circuit, the ray machine template 43 LED driving power large chip 410 above with 1 to be connected; By LED driving power large chip 410 and LED illumination large chip 420, the transparent ray machine template 43 of one side with silver slurry circuit 414 obtains LED ray machine module with the one side of silver slurry circuit 414 by interface lead butt welding again.
For medium and small LED ray machine module (ray machine template is respectively as shown in Fig. 2 and Fig. 1), external power source or signal directly access from the LED driving power large chip 410 being welded on ray machine template 43 by connector 11, as shown in Figure 3 and Figure 4; For large-scale LED ray machine module, ray machine template 43 as shown in Figure 5, on in ray machine template 43, be also welded with flexible circuit 44, external power source or signal connect flexible circuit 44 by connector 11 and are linked on the LED driving power large chip 410 being welded in ray machine template 43; Larger for power in large LED ray machine module, ray machine template 43 as shown in Figure 6, is welded with one and above LED driving power large chip 410 and one and above LED illumination large chip 420, as shown in Figure 7 and Figure 8 in ray machine template 43; Finally along LED driving power large chip 410, LED illumination large chip 420 and or 430 weeks banding transparent adhesive tapes 45 of the integrated transparent block of transition circuit LED ray machine module.
Shown in integrated transparent block 430 Fig. 9 of described transparent transition circuit, comprise on the 3rd transparency carrier 431, the three transparency carriers 431 and be printed with silver slurry circuit 414, silver slurry circuit 414 has interface lead, and interface lead has 1 group of incoming end and more than 1 group output; The width W of the width of incoming end and ray machine template 43 wire incoming ends
gidentical; The incoming end width W of the interface lead of output and LED driving power large chip 410
gidentical; To in integrated transition circuit transparent block 430, be printed with the silver-colored one side of starching circuit 414 of the silver slurry one side of circuit 414 and the band of ray machine template 43 by interface lead butt welding; The integrated transparent block 430 of transition circuit is for by the access of external power source or signal one and above LED driving power large chip 410, then outputs on LED illumination large chip 420 by LED driving power large chip 410.Solve the circuit requirement due to LED ray machine module, the circuit that makes external power source or signal access LED driving power large chip 410 or LED driving power large chip output to LED illumination large chip 420 need relate to printed circuit two-sided in ray machine template and can realize, because the back of ray machine template is generally used held against heat sink, and radiator is made of metal mostly, the back of ray machine template needs insulation, cannot realize the problem of circuitron.The integrated transparent block of transition circuit of the present invention comprises a kind of integrated transparent block of transition circuit: A type: external power source and signal are linked into respectively on two LED driving power large chips 410, and referring to Fig. 9, wherein the width of outer lead access is W
g; LED driving power large chip 410 wire access width are W
g.Its overall width is 2*W+10mm, highly for H2; Typical sizes is: width 25.8mm, highly: H2=6mm.
Described LED illumination large chip 420, as shown in figure 10, comprise that a width is fixed as the first transparency carrier 421 of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier 421 is provided with N LEDs chip 41 and forms LED chip series connection group, every LEDs chip 41 is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N), and the both positive and negative polarity of every LEDs chip 41 is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make to form on transparency carrier 421 the LED chip array of the N row multirow that can extend on transparency carrier 421 length directions; N is the integer between 3 to 7; In the time setting up LED ray machine module, according to power needs, LED illumination large chip 420 to be cut out, the LED illumination large chip 420 that is cut into different length has different power.
Described LED chip array and the interface lead formation method on transparency carrier is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial layer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and substrate is as the first transparency carrier; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is: adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier 421 that produces silver slurry circuit 414, and be connected with the silver slurry circuit 414 on the first transparency carrier 421 by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip 420, silver slurry brush circuit 414 comprises interface lead and the wire that is connected chip.
Described LED driving power large chip, as shown in Figure 11 and Figure 23, comprises that width is fixed as the second transparency carrier 413 of W, and transparency carrier 413 is printed with silver slurry circuit, on silver slurry circuit 414, has interface lead, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template 43 wire incoming ends
gidentical or have a pad being connected with connector; In the interface lead of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); On the second transparency carrier 413, first paste power drives wafer stage chip 411 and the rectifier bridge wafer stage chip 412 of un-encapsulated, then the power drives wafer stage chip 411 of un-encapsulated and rectifier bridge wafer stage chip 412 are welded on the second transparency carrier 413, the second transparency carrier 413 has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2; On LED driving power large chip, the purposes of interface lead is for connecting chip array on described LED illumination large chip.
LED driving method on described LED ray machine module is: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip 412, and the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip 411 is controlled LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
The hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the voltage change of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
Set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current
wmaxsize, thereby realize luminosity adjustment to LED.
By being set, current sensor records effective operating current I in circuit
w, work as I
wexceed design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
Described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
Each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
The method of adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
The material of described ray machine template 43 is thin slice transparent non-metallic material, as SiO
2, Al
2o
3deng, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.Because material is easily crisp and hardness is higher, while therefore can only cutting mode being processed into ray machine shape of template, cost is higher.
Use aforesaid LED ray machine module to set up the method for LED illumination core component, as shown in figure 12, pack the inner cover 61 with fluorescent material into after flexible circuit 44 being set on LED ray machine module; Inner cover 61 with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
It is below the operation principle of the present invention as an example of 6 groups of LED loads example.Be that n value is 6.
First, alternating current AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, referring to Figure 13, voltage is the wavy curve of half period (180 degree), and cycle pulsating dc voltage in the time that 0 spends is zero, and in the time that 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
Job requirement of the present invention, pulsating dc voltage be greater than zero be less than or equal to V
wRbetween, 3～7 sections of loads are set altogether, between each section of load, form series system, raise with voltage, load (being LED load) series connection hop count increases step by step, and load voltage is by switch controlled loading, referring to Figure 13 and Figure 16, voltage switch node is voltage segmentation boundary.
Power supply management operational mode: the present invention is design current control device not, V is only depended in the keying of switches at different levels
wvariation, referring to Figure 13, Figure 16 and Figure 17.
Cycle 0～90 is while spending:
The 1st section: work original state, the cycle is from 0 initial, K switch in circuit
1～K
6in opening (ON), electric current is mainly through node J
1pass through K switch
1form path, load is 1V by rated voltage
wRthe LED composition of/6 tandem workings;
The 2nd section: work as V
wbe more than or equal to 1V
wR/ 6 o'clock, K switch 1 was closed (OFF), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED composition of/6 tandem workings;
The 3rd section: work as V
wbe more than or equal to 2V
wR/ 6 o'clock, K switch 1 was in OFF, and K switch 2 is closed (OFF), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED composition of/6 tandem workings;
The 4th section: work as V
wbe more than or equal to 3V
wR/ 6 o'clock, K switch 1～K2 was in OFF, and K switch 3 is closed (OFF), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED composition of/6 tandem workings;
The 5th section: work as V
wbe more than or equal to 4V
wR/ 6 o'clock, K switch 1～K3 was in OFF, and K switch 4 is closed (OFF), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED composition of/6 tandem workings;
The 6th section: work as V
wbe more than or equal to 5V
wR/ 6 o'clock, K switch 1～K4 was in OFF, and K switch 5 is closed (OFF), and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED composition of/6 tandem workings;
When K switch 1～K6 closes, the method for closing of time delay 0.1ms can be adopted, electric current relatively stably can be obtained.
Cycle 90～180 is while spending:
The 6th section: work original state, voltage is reduced downwards by maximum, and in circuit, K switch 1～K5 is in closed condition (OFF), and K switch 6 is in opening, and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED composition of/6 tandem workings;
The 5th section: work as V
wbe less than or equal to 5V
wR/ 6 o'clock, K switch 5～K6 opened (ON), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED composition of/6 tandem workings;
The 4th section: work as V
wbe less than or equal to 4V
wR/ 6 o'clock, K switch 4～K6 opened (ON), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED composition of/6 tandem workings;
The 3rd section: work as V
wbe less than or equal to 3V
wR/ 6 o'clock, K switch 3～K6 opened (ON), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED composition of/6 tandem workings;
The 2nd section: work as V
wbe less than or equal to 2V
wR/ 6 o'clock, K switch 2～K6 opened (ON), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED composition of/6 tandem workings;
The 1st section: work as V
wbe less than or equal to 1V
wR/ 6 o'clock, K switch 1～K6 opened (ON), and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED composition of/6 tandem workings.
When K switch 1～K6 opens, the open method of 0.1ms in advance can be adopted, electric current relatively stably can be obtained.
Light modulation operational mode: when the given voltage VT=0 of outer setting one, V
wmaxcorresponding CV
wR, when the given VT=5V of external voltage, V
wmaxcorresponding 0V, arranges 0≤V
wmax≤ CV
wR, C adjusts coefficient, for the multiple of rated voltage, as C=1.12.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.It act as a kind of light modulation scheme.Referring to Figure 15, Figure 16 and Figure 17, regulate V
wmaxlower than V
wR, in figure, yl moiety will increase, and the power that is input to load will reduce, thereby reach the object of light modulation.Example: when LED in the normal work of AC220V civil power is, while adjusting alternating current voltage to the voltage of AC180V, the dash area in figure is V
whigher than the formation power perspective view part of 254V, from cycles approximately 55.5 degree to 124.5 degree, because corresponding K switch x in this period is in closing (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 57.0%) by disallowable, this part power consumption is not loaded in load, and the brightness of load is reduced.Work as V
wmaxequal at 0 o'clock, all switches will cut out (OFF), and load supplying amount is zero.Can accomplish stepless dimming, and energy consumption can not occur.
Voltage protection operational mode: V is set
wmax=CV
wR.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.Referring to Figure 14, Figure 16 and Figure 17, example: in the time that civil power reaches the high voltage of 270V, the dash area in figure is V
whigher than the formation power perspective view part of 348V, from cycles approximately 66 degree to 114 degree, because K1～K6 switch in this period is in cutting out (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 50.2%) by disallowable, this part power consumption is not loaded in load, and load can not burnt because of overvoltage.
Overcurrent protection operational mode: the present invention has overcurrent protection, referring to Figure 17, current sensor records effective operating current I in circuit
wexceed design load KI
wR, K is for adjusting coefficient, example: set I
wR=275mA, K=1.2, logic switch controller will cut out all K switch 1～K6 (OFF), and opening switch (ON) K1～K6 need reload after power supply is pressed and recover in next time.
According to principle same as described above, mode of loading can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger, easily produces low-order harmonic at electrical network, referring to Figure 18; Segmentation is many, circuit structure complexity.Generally get 4～6 sections for good.
Note: V
w-pulsating direct current operating voltage (1.4142* alternating voltage); V
wRthe specified maximum working voltage of-pulsating direct current (1.4142* alternating voltage); V
wmax-maximum the pulsating dc voltage (1.4142* alternating voltage) that allows; I
w-effectively operating current.I
wR-specified effective operating current.
If civil power is AC220, the voltage after rectification is DC311V, and taking every group of LED load as single chips is as example, every chips bears DC52V; As AC110, chip bears DC26V.If the loading power area of pulsating direct current half-wave is 1, referring to Figure 19, it is larger that each LED load in figure (LED module 1 to 6) is loaded power difference, LED module 1 reach pulsating direct current half-wave loading power area 20.68% (for chip nominal output 84.4%); And LED module 6 only have 5.11% (for chip nominal output 19.2%), be about 1/4th power of module 1, through actual measurement checking, the intrinsic brilliance of module 6 is very low; The power being on average loaded of whole chipset is 52.4% of chip nominal output, and the utilization rate of chip is lower; And the nominal output of chipset (dotted line frame area) is the loading power area of pulsating direct current half-wave 159%.Because chip amount of redundancy is excessive, not only chip waste, also causes driving power excessive and waste, and has increased the difficulty that cloth is set up simultaneously.Therefore, under Constant Direct Current state, select the method for chip voltage to have some problems under pulsating direct current state, how to ensure that, under the prerequisite of chip trouble free service, the utilization rate that improves chip becomes a problem to be solved.
The nominal output of setting the LED chip array of 6 series connection loads 1.59 times of power by pulsating direct current half-wave and turns down to 1.2 times (consider small grids civil power there will be not less than 1.2 times of fluctuations), referring to Figure 20, if LED chip array chip load power (dash area area in figure) is pulsating direct current half-wave while loading power (pulsating direct current half-wave part area) 1.2 times, can be extrapolated civil power and be AC220V by Figure 20 mapping time, the carrying voltage of chip array be DC236V;
Referring to Figure 21, LED module 1 is arranged respectively to different magnitudes of voltage to module 6, the chip that can obtain under different bearer magnitude of voltage loads power area (dash area in figure);
Adopt 2*52V+4*35V high voltage chip (model of module 1 and module 2 is that VES-AADBHV45, module 3 are ES-AADBHF40 to module 6) composition serial array, the carrying voltage of chip array is adjusted into DC244V; Make Figure 22, it is 96.67% of pulsating direct current half-wave power area that the chip array of acquisition is loaded power area, and the power that chip array is loaded approaches 1 for perfect condition; The power that now LED chip array is loaded is chip array nominal output 77.6%; Experimental verification and estimated value are close.
The module of each voltage section loads power checking: the loading power area of establishing pulsating direct current half-wave is 1, and when voltage is ordinate, easily calculating DC52V chip nominal output by Figure 21 is 26.52%, and in like manner, the nominal output of DC35V chip is 17.89%; Figure 22 is civil power while being AC220V, the power situation being loaded of the each module of LED chip array; Table 1 is that power that chip array is loaded is while being pulsating direct current half-wave power area 1, line voltage is respectively AC220V, AV246V, each module of AC270V is loaded the situation of power, in table, can find out, only module 3 slightly transships at DC311V and DC348V, but because module 1 and module 2 have margin of power, experimental results show that module 3 can pass through.
In the time of other line voltage grades, optimal way is with reference to above-mentioned carrying out.
Under perfect condition, the checking computations of chip bearing power are as shown in the table:
Claims (15)
1. the horizontally disposed LED ray machine module of large chip, it is characterized in that: comprise the transparent ray machine template (43) that is printed on silver slurry circuit (414), silver slurry circuit (414) is formed with interface lead in ray machine template (43), width W and the spacing W of the width of its interface lead and spacing and LED illumination large chip (420) and LED driving power large chip (410)
jGidentical; Larger for power in large-scale ray machine module, or also need by the integrated transparent block of transition circuit (430), ray machine template (43) the LED driving power large chip (410) above with 1 to be connected; Again the one side of the transparent ray machine template of one side (43) the band silver slurry circuit (414) of LED driving power large chip (410) and LED illumination large chip (420) band silver slurry circuit (414) is obtained to LED ray machine module by interface lead butt welding.
2. the horizontally disposed LED ray machine of large chip according to claim 1 module, it is characterized in that: for medium and small LED ray machine module, external power source or signal directly access from the LED driving power large chip (410) being welded on ray machine template (43) by connector (11); For large-scale LED ray machine module, in ray machine template (43), be also welded with flexible circuit (44), external power source or signal connect flexible circuit (44) by connector (11) and are linked on the LED driving power large chip (410) being welded in ray machine template (43); Larger for power in large LED ray machine module, in ray machine template (43), be welded with one and above LED driving power large chip (410) and one and above LED illumination large chip (420); Finally obtain LED ray machine module along LED driving power large chip (410), LED illumination large chip (420) and/or all banding transparent adhesive tapes of the integrated transparent block of transition circuit (430) (45).
3. the horizontally disposed LED ray machine of large chip according to claim 1 module, it is characterized in that: the described integrated transparent block of transparent transition circuit (430) comprises the 3rd transparency carrier (431), on the 3rd transparency carrier (431), be printed with silver slurry circuit (414), silver slurry circuit (414) has interface lead, interface lead to have 1 group of incoming end and more than 1 group output; The width W of the width of incoming end and ray machine template (43) wire incoming end
gidentical; The incoming end width W of the interface lead width of output and LED driving power large chip (410)
gidentical; To in integrated transition circuit transparent block (430), be printed with the silver-colored one side of starching circuit (414) of the one side of silver slurry circuit (414) and the band of ray machine template (43) by interface lead butt welding; The integrated transparent block of transition circuit (430) is for by the access of external power source or signal one and above LED driving power large chip (410), then outputs to LED by LED driving power large chip (410) and throw light on large chip (420).
4. the horizontally disposed LED ray machine of large chip according to claim 1 module, it is characterized in that: described LED illumination large chip (420) comprises that a width is fixed as the first transparency carrier (421) of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier (421) is provided with N LEDs chip 41 and forms LED chip series connection group, every LEDs chip (41) is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N, and the both positive and negative polarity of every LEDs chip (41) is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make the LED chip array of the N row multirow that the upper formation of transparency carrier (421) can extend on transparency carrier (421) length direction; N is the integer between 3 to 7; In the time setting up LED ray machine module, according to power needs, LED illumination large chip (420) to be cut out, the LED illumination large chip (420) that is cut into different length has different power; Described LED chip carrying voltage is DC3.2V or the high voltage that is greater than DC10V.
5. the horizontally disposed LED ray machine of large chip according to claim 4 module, it is characterized in that: described LED chip array and the interface lead formation method on transparency carrier is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial layer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and substrate is as the first transparency carrier; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is: adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier (421) that produces silver slurry circuit (414), and be connected with the silver slurry circuit (414) on the first transparency carrier (421) by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip (420), silver slurry brush circuit (414) comprises interface lead and the wire that is connected chip.
6. the horizontally disposed LED ray machine of large chip according to claim 1 module, it is characterized in that: described LED driving power large chip comprises that width is fixed as the second transparency carrier (413) of W, the second transparency carrier (413) is printed with silver slurry circuit, on silver slurry circuit (414), have interface lead, interface lead has incoming end and output; The width W of the width of incoming end and ray machine template (43) wire incoming end
gidentical or have a pad being connected with connector; In the interface lead of output, there is the parallel interface lead of N+1 bar, the spacing W of adjacent two interface lead
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N); On the second transparency carrier (413), first paste power drives wafer stage chip (411) and the rectifier bridge wafer stage chip (412) of un-encapsulated, then the power drives wafer stage chip (411) of un-encapsulated and rectifier bridge wafer stage chip (412) are welded on the second transparency carrier (413), the second transparency carrier (413) has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2; On LED driving power large chip, the purposes of interface lead is for connecting chip array on described LED illumination large chip.
7. the horizontally disposed LED ray machine of large chip according to claim 6 module, it is characterized in that, LED driving method on described LED driving power large chip is: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip (412), the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR, N section LED load is set on Rectified alternating current; N is the integer between 3 to 7; Each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip (411) is controlled LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
8. the horizontally disposed LED ray machine of large chip according to claim 7 module, it is characterized in that: the hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the voltage change of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
9. the horizontally disposed LED ray machine of large chip according to claim 8 module, is characterized in that: the pulsating direct current operating voltage V that sets Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current
wmaxsize, thereby realize luminosity adjustment to LED.
10. the horizontally disposed LED ray machine of large chip according to claim 8 module, is characterized in that: record effective operating current I in circuit by current sensor is set
w, work as I
wexceed design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
The horizontally disposed LED ray machine of 11. large chip according to claim 8 module, is characterized in that: described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
The horizontally disposed LED ray machine of 12. large chip according to claim 7 module, it is characterized in that: it is the LED chip group with different maximum carrying magnitudes of voltage that each section of LED load being cascaded is set, and can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
The horizontally disposed LED ray machine of 13. large chip according to claim 12 module, is characterized in that, the method for adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
The horizontally disposed LED ray machine of 14. large chip according to claim 1 module, it is characterized in that: the material of described ray machine template (43) is thin slice transparent non-metallic material, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.
15. rights to use require the LED ray machine module described in 1 to 14 arbitrary claim to set up the method for LED illumination core component: flexible circuit (44) is set on LED ray machine module, or also lid is established after transparent cover plate, packs the inner cover (61) with fluorescent material into; Inner cover (61) with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN111068183A (en) * | 2019-12-31 | 2020-04-28 | 青岛温可微电子科技有限公司 | Manufacturing method of welding type heating device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2377623Y (en) * | 1999-05-11 | 2000-05-10 | 鸿友科技股份有限公司 | Optial-mechanical module capable of decreasing size of scanner |
| CN2429940Y (en) * | 2000-05-26 | 2001-05-09 | 赖先富 | Laser diode photomechanism assembly |
| JP2006189519A (en) * | 2004-12-28 | 2006-07-20 | Citizen Electronics Co Ltd | Lcd backlight using light emitting diode |
| US20070279920A1 (en) * | 2006-06-02 | 2007-12-06 | Vincent Lin | Multi-way flashing control box for lamp strings |
| CN201764359U (en) * | 2010-08-24 | 2011-03-16 | 李镭 | LED street lamp easy to maintain |
| US20110317416A1 (en) * | 2010-06-28 | 2011-12-29 | Toshiba Lighting & Technology Corporation | Light-emitting module and lighting apparatus with the same |
| CN202598245U (en) * | 2012-05-18 | 2012-12-12 | 深圳市贝晶光电科技有限公司 | High-power semiconductor light source module |
| CN203810156U (en) * | 2014-05-20 | 2014-09-03 | 贵州光浦森光电有限公司 | LED light machine module with horizontally arranged large chips |
-
2014
- 2014-05-20 CN CN201410213295.0A patent/CN103968286B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2377623Y (en) * | 1999-05-11 | 2000-05-10 | 鸿友科技股份有限公司 | Optial-mechanical module capable of decreasing size of scanner |
| CN2429940Y (en) * | 2000-05-26 | 2001-05-09 | 赖先富 | Laser diode photomechanism assembly |
| JP2006189519A (en) * | 2004-12-28 | 2006-07-20 | Citizen Electronics Co Ltd | Lcd backlight using light emitting diode |
| US20070279920A1 (en) * | 2006-06-02 | 2007-12-06 | Vincent Lin | Multi-way flashing control box for lamp strings |
| US20110317416A1 (en) * | 2010-06-28 | 2011-12-29 | Toshiba Lighting & Technology Corporation | Light-emitting module and lighting apparatus with the same |
| CN201764359U (en) * | 2010-08-24 | 2011-03-16 | 李镭 | LED street lamp easy to maintain |
| CN202598245U (en) * | 2012-05-18 | 2012-12-12 | 深圳市贝晶光电科技有限公司 | High-power semiconductor light source module |
| CN203810156U (en) * | 2014-05-20 | 2014-09-03 | 贵州光浦森光电有限公司 | LED light machine module with horizontally arranged large chips |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN111068183A (en) * | 2019-12-31 | 2020-04-28 | 青岛温可微电子科技有限公司 | Manufacturing method of welding type heating device |
| CN111068183B (en) * | 2019-12-31 | 2021-07-27 | 青岛温可微电子科技有限公司 | Manufacturing method of welding type heating device |
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