CN202598245U - High-power semiconductor light source module - Google Patents
High-power semiconductor light source module Download PDFInfo
- Publication number
- CN202598245U CN202598245U CN 201220226917 CN201220226917U CN202598245U CN 202598245 U CN202598245 U CN 202598245U CN 201220226917 CN201220226917 CN 201220226917 CN 201220226917 U CN201220226917 U CN 201220226917U CN 202598245 U CN202598245 U CN 202598245U
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- Prior art keywords
- light source
- module
- shell
- semiconductor light
- high power
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- 239000004411 aluminium Substances 0.000 claims description 17
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003292 glue Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The utility model discloses a high-power semiconductor light source module which comprises a shell, an aluminum substrate fixedly connected with the shell and a semiconductor light source fixedly arranged on the aluminum substrate, wherein a light refraction part used for refracting and outwards diffusing light emitted by the semiconductor light source is fixedly connected to the shell. The light emitting angle of the high-power semiconductor light source module is larger and can reach larger than 140 degrees, which is beneficial to sufficiently utilizing the semiconductor light source so as to improve the utilization rate of the module and reduce the cost.
Description
Technical field
The utility model relates to a kind of light source modular structure, especially relates to a kind of high power semi-conductor (such as LED) light source module.
Background technology
Light emitting diode (Light-Emitting Diode LED) can send the light of certain brightness, and brightness can be regulated through electric current or voltage again, and itself is shock-resistant again, anti-vibration, and glow color is very abundant, and the transition of color is also very soft.Simultaneously LED is long especially service life, it is reported life-span of LED lamp be ordinary incandescent lamp 20-30 doubly, be more than 10 times of conventional fluorescent lamps life-span.Therefore the LED light fixture has advantages such as power saving, life-span length as the alternative source of light in places such as the modern life, office because of it, is used very widely.
Existing led light source module comprises many low-power LEDs mostly, also has minority to adopt great power LED to add the form of lenslet.Maximum the producing with these two kinds of forms of led light source module on the market at present, its lighting angle maximum can only reach 120 degree.In addition, when construction and installation, because a lamp box need adopt more led light source module, and must arrange very uniformly during construction, otherwise will cause the lamp box luminance nonuniformity, some places are bright, and some places are dark, and are extremely not attractive in appearance.
The led light source module of traditional form is owing to exist the uneven shortcoming of little (less than the 120 °) light of lighting angle; Part has installed the module of convex lens additional, make moderate progress on the uniformity of light, but lighting angle diminishes to some extent; Service efficiency is not very desirable; The utilization rate of module is not very high, and the overall appearance of module is not fine, and cumbersome in the process of production and assembly yet.In addition; Tradition high-power LED light source module can't be accomplished and can singlely use, or adopt current constant mode driving, the configuration of constant-current driving module power supply to need to decide according to the quantity of module; The difference of module quantity need adopt different power supplys, and is very inconvenient in actual use.
The utility model content
The utility model proposes a kind of high power semi-conductor (such as LED) light source module, exists lighting angle to cause a plurality of led light source modules collocation of the not high and needs of service efficiency to use the technical problem of defective such as inconvenient installation for a short time to solve present led light source module.
The utility model adopts following technical scheme to realize: a kind of high power semi-conductor light source module, and it comprises: shell; Be fixedly connected the aluminium base that is provided with shell; Be fixedly installed on the semiconductor light sources on the aluminium base; On shell, there is the light that semiconductor light sources is sent to reflect anaclasis portion to external diffusion.
Wherein, anaclasis portion is processed by transparent material.
Wherein, anaclasis portion is processed by the PMMA material.
Wherein, have a plurality of pilot holes on the shell, have a plurality of fixing holes on the aluminium base, in a fixing hole of aluminium base, shell and aluminium base are fixed by the pilot hole locking that screw runs through on the shell.
Wherein, on the downside face of shell a plurality of cable clamping interfaces are set.
Wherein, the power line that is connected with semiconductor light sources is set in cable clamping interface.
Wherein, a plurality of capillary grooves that are used to prevent the liquid inflow enclosure in the cable clamping interface are set in cable clamping interface.
Wherein, semiconductor light sources comprises at least: the anodal diode that is connected with power supply; The anodal LED that links to each other with diode cathode.
Compared with prior art, the utlity model has following beneficial effect:
The high power semi-conductor light source module that the utility model proposes is compared with present traditional on the market module; Module thickness is below 15mm, and lighting angle can reach more than 140 °, and lighting angle is bigger; Can make full use of semiconductor light sources; Thereby also can illuminate scope bigger on the lamp box in the place very near apart from lamp box, or can not form the different zone bright spot of light and shade etc., go for very thin lamp box; And because lighting angle is big, lamp box of the same area uses the quantity of module also just few, thereby has improved the utilization rate of module greatly, and has reduced cost.
Description of drawings
Fig. 1 is the decomposing schematic representation of the utility model;
Fig. 2 is the structural representation of the utility model;
Fig. 3 is the downside face structural representation of shell;
Fig. 4 is the sketch map of led light source circuit.
The specific embodiment
In conjunction with illustrated in figures 1 and 2, the utility model proposes a kind of high power semi-conductor light source module, and it comprises: have the shell 1 of a plurality of pilot holes 11, and on the downside face of shell 1 a plurality of cable clamping interfaces 12 are set; Aluminium base 2 with a plurality of fixing holes 21; Be fixedly installed on the semiconductor light sources 3 on the aluminium base 2; The power line 4 that is arranged in the cable clamping interface 12 is connected with aluminium base 2; The pilot hole 11 that is run through on the shell by screw locks in a fixing hole of aluminium base 2, thereby shell 1 is fixing with aluminium base 2; In addition, on the upper side of shell 1, be fixedly connected and be provided with one and be used for the light that semiconductor light sources 3 is sent is reflected the anaclasis portion 5 to external diffusion (like opticpath shown in dotted lines in Figure 2).
In a preferred embodiment, anaclasis portion 5 is one-body molded setting with shell 1.
In a further advantageous embodiment, anaclasis portion 5 is fixed on the aluminium base 2 through screw 6, and anaclasis portion 5 and shell 1 are combined together fully.
Anaclasis portion 5 employing transpexs (Polymethyl Methacrylate, PMMA) material is processed, and light transmittance reaches more than 97%, thereby can reduce the loss of light.Anaclasis portion 5 has adopted professional optical design, is designed to light that the concavees lens form sends semiconductor light sources 3 and reflects and disperse, and is similar to concavees lens, makes light evenly distribute (optical treatment mode).
The light that semiconductor light sources 3 is sent can reach more than 140 ° the lighting angle of the high power semi-conductor light source module of the utility model proposition after handling through 5 refractions of anaclasis portion, has the big characteristics of lighting angle, helps making full use of semiconductor light sources 3.
Further, in conjunction with shown in Figure 3, on the downside of shell 1, a plurality of cable clamping interfaces 12 be set guarantee that power line 4 is more reliable with being connected of aluminium base 2.A plurality of capillary grooves 13 are set in cable clamping interface 12; When cable clamping interface 12 is carried out the waterproof injecting glue; Capillary groove 13 can be tackled glue and flow out cable clamping interface 12; Glue flows to the outer 1 internal damage semiconductor light sources 3 of shell and waits other internal parts when preventing injecting glue, helps producing, and also can better play good waterproof effect to power line 4 simultaneously.
As shown in Figure 4, the circuit design of the employing constant voltage of the high power semi-conductor light source module that the utility model proposes, the convenient use.Semiconductor light sources 3 adopts high-power LED (power is more than 0.5W) to realize.And the positive pole of LED connects the negative electrode of a diode D1, connects power supply through diode D1.The sort circuit structure can effectively be protected LED: when LED and power supply connect inverse time at both positive and negative polarity, or under 2 times of rated voltages, can effectively protect LED can not damage by diode D1.
To sum up, the high power semi-conductor light source module that the utility model proposes is compared with present traditional on the market module, and module thickness is below 15mm; And lighting angle can reach more than 140 °; Lighting angle is bigger, can make full use of semiconductor light sources 3, thereby also can illuminate scope bigger on the lamp box in the place very near apart from lamp box; Or can not form the different zone bright spot of light and shade etc., go for very thin lamp box; And because lighting angle is big, lamp box of the same area uses the quantity of module also just few, thereby has improved the utilization rate of module, the cost of reduction greatly.
The above is merely the preferred embodiment of the utility model; Not in order to restriction the utility model; Any modification of being done within all spirit and principles at the utility model, be equal to replacement and improvement etc., all should be included within the protection domain of the utility model.
Claims (8)
1. a high power semi-conductor light source module is characterized in that, comprising: shell; Be fixedly connected the aluminium base that is provided with shell; Be fixedly installed on the semiconductor light sources on the aluminium base; On shell, there is the light that semiconductor light sources is sent to reflect anaclasis portion to external diffusion.
2. according to the said high power semi-conductor light source of claim 1 module, it is characterized in that anaclasis portion is processed by transparent material.
3. according to the said high power semi-conductor light source of claim 2 module, it is characterized in that anaclasis portion is processed by the PMMA material.
4. according to the said high power semi-conductor light source of claim 1 module; It is characterized in that; Have a plurality of pilot holes on the shell, have a plurality of fixing holes on the aluminium base, in a fixing hole of aluminium base, shell and aluminium base are fixed by the pilot hole locking that screw runs through on the shell.
5. according to the said high power semi-conductor light source of claim 1 module, it is characterized in that, on the downside face of shell a plurality of cable clamping interfaces are set.
6. according to the said high power semi-conductor light source of claim 5 module, it is characterized in that, the power line that is connected with semiconductor light sources is set in cable clamping interface.
7. according to the said high power semi-conductor light source of claim 5 module, it is characterized in that, a plurality of capillary grooves that are used to prevent the liquid inflow enclosure in the cable clamping interface are set in cable clamping interface.
8. according to any one said high power semi-conductor light source module of claim 1-7, it is characterized in that semiconductor light sources comprises at least: the anodal diode that is connected with power supply; The anodal LED that links to each other with diode cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220226917 CN202598245U (en) | 2012-05-18 | 2012-05-18 | High-power semiconductor light source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220226917 CN202598245U (en) | 2012-05-18 | 2012-05-18 | High-power semiconductor light source module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202598245U true CN202598245U (en) | 2012-12-12 |
Family
ID=47315778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220226917 Expired - Fee Related CN202598245U (en) | 2012-05-18 | 2012-05-18 | High-power semiconductor light source module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202598245U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102679223A (en) * | 2012-05-18 | 2012-09-19 | 深圳市贝晶光电科技有限公司 | High-power semiconductor light source module |
| CN103968286A (en) * | 2014-05-20 | 2014-08-06 | 贵州光浦森光电有限公司 | LED light machine module with horizontally arranged big chips |
-
2012
- 2012-05-18 CN CN 201220226917 patent/CN202598245U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102679223A (en) * | 2012-05-18 | 2012-09-19 | 深圳市贝晶光电科技有限公司 | High-power semiconductor light source module |
| CN103968286A (en) * | 2014-05-20 | 2014-08-06 | 贵州光浦森光电有限公司 | LED light machine module with horizontally arranged big chips |
| CN103968286B (en) * | 2014-05-20 | 2016-08-24 | 贵州光浦森光电有限公司 | The LED light machine module that large chip is horizontally disposed |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121212 Termination date: 20150518 |
|
| EXPY | Termination of patent right or utility model |