CN203812914U - LED illumination large chip - Google Patents
LED illumination large chip Download PDFInfo
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- CN203812914U CN203812914U CN201420256755.3U CN201420256755U CN203812914U CN 203812914 U CN203812914 U CN 203812914U CN 201420256755 U CN201420256755 U CN 201420256755U CN 203812914 U CN203812914 U CN 203812914U
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- 238000005286 illumination Methods 0.000 title abstract description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 17
- 229910052709 silver Inorganic materials 0.000 description 16
- 239000004332 silver Substances 0.000 description 16
- 239000002002 slurry Substances 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
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- 230000009471 action Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
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- Led Devices (AREA)
Abstract
The utility model discloses an LED illumination large chip comprising a first transparent substrate (421) having a fixed width of W. The first transparent substrate (421) is provided with N+1 parallel interface leads, and is provided with N LED chips (41) to form LED chip serial connection groups. Each of the LED chips (41) is disposed between two adjacent interface leads, and a spacing between every two adjacent interface leads is WJG, which is equal to the W minus the width of the interface lead and then divided by the N. The positive pole and the negative pole of each of the LED chips (41) are respectively connected with the two adjacent interface leads. A plurality of LED serial connection groups are parallely connected together at the same time, and therefore the first transparent substrate (421) can be provided with an LED chip array having N lines and a plurality of rows, which can be extended along the length direction of the first transparent substrate (421), and the N is an integer between 3 and 7.
Description
Technical field
The utility model relates to a kind of LED illumination large chip, belongs to LED lighting technical field.
Background technology
The Chinese patent application such as application number 201310140124.5,201310140138.7,201310140150.8,201310140105.2,201310140134.9,201310140106.7,201310140151.2,201310140136.8 disclose multiple ray machine module technical schemes that can use on LED bulb general and that exchange.These technology are the Lighting Industry framework of setting up centered by LED bulb, and the basic concept that makes LED bulb (lighting source), light fixture, illumination control become the end product of independent production, application is laid a good foundation.But above-mentioned patent not yet solves the problem of the built-in driving power of ray machine module.
Existing LED driving power mostly is Switching Power Supply, and volume is too large; Also have the linear power supply that volume is slightly little, but it drives chip to coordinate auxiliary element mainly with DIP dual-in-line or SMD paster encapsulation pattern again, its volume is still not enough to little of being placed into ray machine module internal.
LED illumination provides LED chip to start from chip factory need to be through a series of such as paster to illuminating lamp, die bond, welding, encapsulation, color-division, drive design, heat dissipation design, complicated and the tediously long Production design process such as Design of Luminaires, owing to there being chip layout design, many uncertainties such as heat conductive design and power drives design, this industry structure centered by LED chip is difficult to realize light source (bulb) standardization under the pattern of replaceable light source, finally causing the LED lamp in terminal market is main body mainly with the overall structure lamp of non-exchange light source, the industry complexity and the industrial concentration that has reduced illuminating product of illuminating product are increased.
Further creation idea advanced person, the built-in driving power of easier standardized LED bulb ray machine module and LED illumination chip organization plan are of far-reaching significance for large-scale promotion LED illumination.
Application number is that the Chinese patent application such as 201310140106.7,201310140105.2,201310140134.9 disclose the multiple technical schemes that can make at epitaxial wafer ray machine module.The problem of ray machine template being used as to the existence of epitaxial wafer direct growth chip is because ray machine template has 7 specifications, has the requirement of multiple power in each specification, and the producer can face the less awkward problem of the too many batch of kind; Secondly LED chip and interlock circuit area occupied are less with respect to ray machine template area, and production cost can be in any more; There is again the ray machine of being template thicker compared with substrate, also relatively increased cost.
Utility model content
The purpose of this utility model is, a kind of LED illumination large chip is provided.It can be advantageously used in the LED ray machine module of different capacity requirement, and production cost of the present utility model is low, be convenient to assembling, is conducive to the standardization of LED illumination, promotes on a large scale.
The technical solution of the utility model: the LED large chip that throws light on, be characterized in: comprise that a width is fixed as the first transparency carrier of W, the first transparency carrier is provided with the parallel interface lead of N+1 bar, the first transparency carrier is provided with N LEDs chip and forms LED chip series connection group, every LEDs chip is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N), and the both positive and negative polarity of every LEDs chip is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make to form on the first transparency carrier the LED chip array of the N row multirow that can extend on the first transparency carrier length direction, and N is the integer between 3 to 7.
In above-mentioned LED illumination large chip, two kinds of methods below described LED chip array and the formation of interface lead on the first transparency carrier can be used: 1. adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial loayer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and transparency carrier is as substrate; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, as tin indium oxide (ITO), to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is to adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; 2. adopt conventional art LED chip array to be mounted on the first transparency carrier that produces silver slurry circuit, and be connected with the silver slurry circuit on the first transparency carrier by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit comprises interface lead and the wire of connection chip that is connected LED chip and interface lead.
Compared with prior art, LED illumination large chip of the present utility model can be advantageously used in the LED ray machine module of different capacity requirement, it can be under the driving of power supply large chip, LED illumination large chip is designed to fixing width W, length determines according to the specification of manufacturing equipment, with time be divided into different length.LED illumination large chip need not cut into grade size for single led chip like this, the mechanical property requirement to substrate by reduction when chip manufacturing, high purity aluminium oxide that makes similar polycrystalline etc. enters the range of choice of substrate, has reduced significantly the manufacturing cost of LED illumination chip; Every LEDs chip the two poles of the earth in illumination large chip are without welding, and the less while that electrode can do also can adopt the scheme of transparency electrode, can effectively increase the light-emitting area of chip and improve luminous efficiency; From chip factory, illumination large chip only need in conjunction with power supply large chip can directly mount be welded in ray machine template or bulb heat conduction support on, LED illumination production procedure is short and simple.Meanwhile, large chip is by using power segmentation cutting, and design, to produce in the whole process of product easily definite factor more, is convenient to it to control to realize standardized work; Can meet majority of illumination application requirements by the illumination large chip of cutting apart with power, illumination large chip non-like this cutting, a limited number of is easily realized the industrial concentration of height, will significantly reduce the manufacturing cost of illuminating product; Changed the existing encapsulation industrial concept of LED, illumination large chip adopts after upside-down mounting and only needs simplified package large chip periphery, or can adopt the techniques such as cover plate encapsulation when employing formal dress, has got around external patent barrier.
Ray machine module of the present utility model goes for all kinds of bulb patents of the utility model people earlier application, original ray machine module in replacement bulb.Ray machine module of the present utility model structurally can built-in power and LED illumination chip, and volume is little, is easy to realize standardization.The utility model can change existing industry structure centered by LED chip, LED ray machine module of the present utility model can be realized light source (bulb) standardization under the pattern of replaceable light source, thereby can reduce the industry complexity of illuminating product and the industrial concentration of raising illuminating product.
LED large chip of the present utility model can adopt external driving power directly to drive.
Brief description of the drawings
Fig. 1 is the utility model LED chip outward appearance front view;
Fig. 2 is the utility model LED illumination large chip outside drawing;
Fig. 3 is the LED illumination large chip outside drawing that the utility model adopts spun gold weldering knot;
Fig. 4 is the large-scale ray machine template that the utility model is printed with silver slurry circuit;
Fig. 5 is the not large-scale ray machine module of sealing of the utility model;
Fig. 6 is the utility model large-scale ray machine module of sealing;
Fig. 7 is the structural representation of the ray machine core component of the utility model embodiment;
Fig. 8 is the high-power LED driving power source large chip front view of the utility model embodiment;
Fig. 9 is the LED voltage and current waveform of the utility model embodiment;
Figure 10 is the extra-high pressure operate power oscillogram of the utility model embodiment;
The light modulation operate power oscillogram of Figure 11 the utility model embodiment;
The circuit connection diagram of Figure 12 the utility model embodiment;
The driving power chip internal circuit diagram of Figure 13 the utility model embodiment;
The LED voltage and current waveform of 3 sections of loads of Figure 14 the utility model embodiment;
Figure 15: the LED chip array module power of the utility model embodiment DC52V series connection loads distribution map;
Figure 16: the utility model embodiment LED chip array carrying voltage tentative calculation figure;
Figure 17: mono-DC52V chip bearing power tentative calculation figure of the utility model embodiment;
Figure 18: the LED chip array module power of the utility model embodiment 2*52V+4*35V series connection loads distribution map;
Figure 19 is the low-power LED driving power large chip front view of the utility model embodiment.
Being labeled as in accompanying drawing: 41-LED chip, the 41.1-P utmost point, the 41.2-N utmost point, 41.3-metal electrode, 41.4-semiconductor, 42-transparent cover plate, 43-ray machine template, 43.1-ray machine module fixing hole, the flexible built-up circuit of 44-, 44.1-solder joint, the transparent sealing of 45-, the inner cover of 61-with fluorescent material, 414-silver slurry printed circuit, 417-welds gold thread, 410-LED driving power large chip, 411-LED power drives wafer stage chip, 412-rectifier bridge wafer stage chip, 413-the second transparency carrier, 414-silver slurry circuit, 414.1-pad, 416-resistance, the 420-LED large chip that throws light on, 421-the first transparency carrier.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described, but not as the foundation to the utility model restriction.
Embodiment.The LED large chip that throws light on, as shown in Figures 1 to 3: comprise that a width is fixed as the first transparency carrier 421 of W, the first transparency carrier 421 is provided with the parallel interface lead of N+1 bar, the first transparency carrier 421 is provided with N LEDs chip 41 and forms LED chip series connection group, every LEDs chip 41 is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W
jGequaling W, to subtract interface lead wide again divided by N (W
jG=(W-interface lead is wide)/N), and the both positive and negative polarity of every LEDs chip 41 is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make to form on the first transparency carrier 421 the LED chip array of the N row multirow that can extend on the first transparency carrier 421 length directions, and N is the integer between 3 to 7.
Described LED chip array and the interface lead formation method on the first transparency carrier 421 is: adopt transparent substrate to do the slim epitaxial wafer that transition epitaxial loayer forms, epitaxial wafer adopts ripe chip fabrication techniques to divide layer growth circuit and LED chip, then form through cutting the LED illumination large chip that width is W, the circuit wherein growing comprises interface lead and the wire of connection chip that is connected LED chip and interface lead, and transparency carrier is as substrate; Described chip two utmost points, owing to not needing welding, can adopt transparency electrode, as tin indium oxide (ITO), to increase the light-emitting area of chip; The ripe manufacturing technology of described chip is to adopt the layering of Metalorganic chemical vapor deposition equipment to cover the techniques such as silicon, gluing, photoetching, etching, plated film, alloy and abrasive disc; Or adopt conventional art LED chip array to be mounted on the first transparency carrier 421 that produces silver slurry circuit 414, and be connected with the silver slurry circuit 414 on the first transparency carrier 421 by face-down bonding or the welding of spun gold formal dress, obtain LED illumination large chip, silver slurry brush circuit 414 comprises interface lead and the wire of connection chip that is connected LED chip and interface lead.
The LED ray machine module that uses aforesaid LED illumination large chip to set up, as shown in Figs. 4-6, it is set up by the following method: according to power needs, LED illumination large chip 420 is cut out, the LED illumination large chip 420 that is cut into different length has different power, printed silver slurry circuit 414 in ray machine template 43, in ray machine template 43, silver slurry circuit 414 also has interface lead, and number is all identical with the interface lead of LED illumination large chip 420 with spacing; The throw light on one side of large chip 420 microarray strips of LED is attached to ray machine template 43 and carries out butt welding with the one side of silver slurry circuit 414, and both interface lead are corresponding welding mutually; LED driving power large chip 410 is attached to ray machine template 43 with the one side of silver slurry circuit simultaneously and carries out butt welding with the one side of silver slurry circuit 414; Thereby throw light on large chip 420 of LED is connected with LED driving power large chip 410; Finally with transparent adhesive tape encapsulation LED illumination large chip and driving power large chip gap around.Described LED chip carrying voltage is～DC3.2V or be greater than the high voltage of DC10V.
The structure that described LED driving power large chip 410 can use as shown in Fig. 8 and Figure 19, comprises that the second transparency carrier 413, the second transparency carriers 413 are printed with silver slurry circuit, on silver slurry circuit, is formed with interface lead, and interface lead has incoming end and output; The width W of the width of incoming end and ray machine template 43 wire incoming ends
gidentical or have a pad being connected with connector; The interface lead number of output is identical with the interface lead of LED illumination large chip 420 with spacing, on the second transparency carrier 413, first paste power drives wafer stage chip 411 and the rectifier bridge wafer stage chip 412 of un-encapsulated, then the power drives wafer stage chip 411 of un-encapsulated and rectifier bridge wafer stage chip 412 are welded on the second transparency carrier 413; Rectifier bridge wafer stage chip 412 can be merged in power drives wafer stage chip 411; The second transparency carrier 413 has the width of interface lead end identical with the width W of LED illumination large chip, is highly H2.
LED driving method on described LED ray machine module can be: civil power AC is converted into Rectified alternating current by the rectifier bridge on rectifier bridge wafer stage chip 412, and the voltage of Rectified alternating current is greater than zero, is less than or equal to the specified maximum working voltage V of Rectified alternating current
wR3～7 sections of LED loads are set on Rectified alternating current, each section of LED load is cascaded and forms LED load series block group, multiple LED load series block groups form described LED chip array, in the time that the voltage of Rectified alternating current raises, the hop count that power drives wafer stage chip 411 is controlled LED load series connection increases step by step, in the time of the voltage drop of Rectified alternating current, the hop count of controlling LED load series connection reduces step by step, and the hop count of LED load series connection is the actual LED load hop count that is connected into Rectified alternating current.
The hop count of described LED load series connection is controlled by switch, the segmentation boundary that the control node of switch is voltage, and the number of fragments of described voltage is corresponding with the hop count of LED load series connection; The control method of the hop count of described LED load series connection is, the negative pole direction of every section of LED load is connected respectively to the negative pole of Rectified alternating current by switch, then according to the change in voltage of Rectified alternating current, the break-make of each switch is controlled, used the mode that a few sections of switches are opened circuit to realize the change of the hop count of LED load series connection.
Set the pulsating direct current operating voltage V of Rectified alternating current
wbe greater than V
wmaxperiod, control all switches and disconnect, stop to all LED load supplyings, realize overvoltage and surge protection to LED; Allow pulsating dc voltage V by the maximum of adjusting Rectified alternating current
wmaxsize, thereby realize luminosity adjustment to LED.
By being set, current sensor records effective operating current I in circuit
w, work as I
wexceed design load KI
wRtime, close all switches to realize current protection, the unlatching of switch need recover after reloading voltage next time, and wherein K is for adjusting coefficient, I
wRfor specified effective operating current.
Described switch is at pulsating dc voltage ascent stage time delay t
mmillisecond action, shifts to an earlier date t in the pulsating dc voltage decline stage
mmillisecond action, to obtain LED operating current relatively stably.
Each section of LED load that setting is cascaded is the LED chip group with different maximum carrying magnitudes of voltage, can make the LED load series block group of working under switch control obtain the operating current curve that approaches ideal sine wave.
The method of adjustment of the maximum carrying of described each section of LED load voltage is: 1. taking pulsating dc voltage as ordinate, the pulsating direct current cycle is abscissa mapping; 2. increase because LED voltage increases electric current, essence is that power damages.Suppose a pure resistor load, the sinusoidal graphics area that its power forms at pulsating direct current half-wave is 1, mapping; 3. the load power of setting LED load series block group is pure resistor load 120%, the rectangle echo that to make an area be 1.2, and the ordinate value of rectangle shade is the total maximum carrying magnitude of voltage of series block group; 4. in like manner, under known LED load-carrying voltage condition, can map and draw the graphics area of LED load,, the area sum of verifying piecemeal LED load is greater than the sinusoidal wave area of pulsating direct current under the control node of switch; 5. choose the carrying magnitude of voltage of each section of LED load in LED load series block group, be added and be more than or equal to the total maximum carrying magnitude of voltage of series block group; Wherein, the higher LED load of carrying magnitude of voltage is near positive terminal, and the lower LED load of carrying magnitude of voltage is near negative pole end.
The material of described ray machine template 43 is thin slice transparent non-metallic material, as SiO
2, Al
2o
3deng, it is that slim sheet material is warmed to nearly material softening point, utilizes mould to adopt pressing equipment stamping forming.Because material is easily crisp and hardness is higher, while therefore can only cutting mode being processed into ray machine shape of template, cost is higher.
Use aforesaid LED ray machine module also can set up the method for LED illumination core component, as shown in Figure 7, pack the inner cover 61 with fluorescent material into after flexible circuit 44 being set on LED ray machine module; Inner cover 61 with fluorescent material is that the injection moulding particulate material containing fluorescent material and the transparent injected-moulded particulate material that does not contain fluorescent material are mixed; Mixed proportion configures as required, then by injection mo(u)lding and get final product; The wherein said injection moulding particulate material containing fluorescent material is that 20～30% fluorescent powders and 70～80% transparent injected-moulded particulate material are mixed, and again makes injection moulding particulate material after hot melt; Fluorescent material is selected the fluorescent material that is greater than 8ms persistence.
It is below the operation principle that the LED as an example of 6 groups of LED loads example drives.Be that n value is 6.
First, alternating current AC becomes Rectified alternating current after rectifier bridge, example: AC220V, 50Hz alternating current is after rectifier bridge rectification, referring to Fig. 9, voltage is the wavy curve of half period (180 degree), and cycle pulsating dc voltage in the time that 0 spends is zero, and in the time that 90 spend, pulsating dc voltage reaches maximum V
wRfor the highest DC311V, 180 when spend, and voltage reduces to again zero, goes round and begins again.
The job requirement of circuit, pulsating dc voltage be greater than zero be less than or equal to V
wRbetween, 6 sections of loads are set altogether, between each section of load, form series system, raise with voltage, load (being LED load) series connection hop count increases step by step, and load voltage is by switch controlled loading, and referring to Fig. 9 and Figure 12, voltage switch node is voltage segmentation boundary.
Power supply management operational mode: not design current control device, V is only depended in the keying of switches at different levels
wvariation, referring to Fig. 9, Figure 12 and Figure 13.
Cycle 0～90 is while spending:
The 1st section: work initial condition, in circuit, K switch 1～K6 is in opening (ON) from 0 initial the cycle, and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED composition of/6 tandem workings;
The 2nd section: work as V
wbe more than or equal to 1V
wR/ 6 o'clock, K switch 1 was closed (OFF), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED composition of/6 tandem workings;
The 3rd section: work as V
wbe more than or equal to 2V
wR/ 6 o'clock, K switch 1 was in OFF, and K switch 2 is closed (OFF), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED composition of/6 tandem workings;
The 4th section: work as V
wbe more than or equal to 3V
wR/ 6 o'clock, K switch 1～K2 was in OFF, and K switch 3 is closed (OFF), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED composition of/6 tandem workings;
The 5th section: work as V
wbe more than or equal to 4V
wR/ 6 o'clock, K switch 1～K3 was in OFF, and K switch 4 is closed (OFF), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED composition of/6 tandem workings;
The 6th section: work as V
wbe more than or equal to 5V
wR/ 6 o'clock, K switch 1～K4 was in OFF, and K switch 5 is closed (OFF), and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED composition of/6 tandem workings;
When K switch 1～K6 closes, the method for closing of time delay 0.1ms can be adopted, electric current relatively stably can be obtained.
Cycle 90～180 is while spending:
The 6th section: work initial condition, voltage is reduced downwards by maximum, and in circuit, K switch 1～K5 is in closed condition (OFF), and K switch 6 is in opening, and electric current forms path through node J6 by K switch 6, and load is 6V by rated voltage
wRthe LED composition of/6 tandem workings;
The 5th section: work as V
wbe less than or equal to 5V
wR/ 6 o'clock, K switch 5～K6 opened (ON), and electric current mainly forms path through node J5 by K switch 5, and load is 5V by rated voltage
wRthe LED composition of/6 tandem workings;
The 4th section: work as V
wbe less than or equal to 4V
wR/ 6 o'clock, K switch 4～K6 opened (ON), and electric current mainly forms path through node J4 by K switch 4, and load is 4V by rated voltage
wRthe LED composition of/6 tandem workings;
The 3rd section: work as V
wbe less than or equal to 3V
wR/ 6 o'clock, K switch 3～K6 opened (ON), and electric current mainly forms path through node J3 by K switch 3, and load is 3V by rated voltage
wRthe LED composition of/6 tandem workings;
The 2nd section: work as V
wbe less than or equal to 2V
wR/ 6 o'clock, K switch 2～K6 opened (ON), and electric current mainly forms path through node J2 by K switch 2, and load is 2V by rated voltage
wRthe LED composition of/6 tandem workings;
The 1st section: work as V
wbe less than or equal to 1V
wR/ 6 o'clock, K switch 1～K6 opened (ON), and electric current mainly forms path through node J1 by K switch 1, and load is 1V by rated voltage
wRthe LED composition of/6 tandem workings.
When K switch 1～K6 opens, the open method of 0.1ms in advance can be adopted, electric current relatively stably can be obtained.
Light modulation operational mode: when the given voltage VT=0 of outer setting one, V
wmaxcorresponding CV
wR, when the given VT=5V of external voltage, V
wmaxcorresponding 0V, arranges 0≤V
wmax≤ CV
wR, C adjusts coefficient, for the multiple of rated voltage, as C=1.12.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.It act as a kind of light modulation scheme.Referring to Figure 11, Figure 12 and Figure 13, regulate V
wmaxlower than V
wR, in figure, dash area will increase, and the power that is input to load will reduce, thereby reach the object of light modulation.Example: when LED in the normal work of AC220V civil power is, while adjusting alternating current voltage to the voltage of AC180V, the dash area in figure is V
whigher than the formation power perspective view part of 254V, from cycles approximately 55.5 degree to 124.5 degree, because corresponding K switch x in this period is in closing (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 57.0%) by disallowable, this part power consumption is not loaded in load, and the brightness of load is reduced.Work as V
wmaxequal at 0 o'clock, all switches will cut out (OFF), and load supplying amount is zero.Can accomplish stepless dimming, and energy consumption can not occur.
Voltage protection operational mode: V is set
wmax=CV
wR.V
wbe greater than V
wmaxperiod, the switch of corresponding each section will cut out (OFF), stop powering to the load.Referring to Figure 10, Figure 12 and Figure 13, example: in the time that civil power reaches the high voltage of 270V, the dash area in figure is V
whigher than the formation power echo part of 348V, from cycles approximately 66 degree to 114 degree, because K1～K6 switch in this period is in cutting out (OFF), the power consumption of dash area (be equivalent to pulsating direct current half-wave under normal civil power loading power 50.2%) by disallowable, this part power consumption is not loaded in load, and load can not burnt because of overvoltage.; When electrical network is surged, can there is instantaneous peak voltage widely higher than V
wmax, each section of switch, in closed condition, realized the object of the protection of surging this moment.
Overcurrent protection operational mode: the utlity model has overcurrent protection, referring to Figure 13, current sensor records effective operating current I in circuit
wexceed design load KI
wR, K is for adjusting coefficient, example: set I
wR=275mA, K=1.2, logic switch controller will cut out all K switch 1～K6 (OFF), and opening switch (ON) K1～K6 need reload after power supply is pressed and recover in next time.
According to principle same as described above, mode of loading can be divided into 3～7 sections, and segmentation is few, and circuit is simple, but curent change is larger, easily produces low-order harmonic at electrical network, referring to Figure 14; Segmentation is many, circuit structure complexity.Generally get 4～6 sections for good.
Note: V
w-pulsating direct current operating voltage (1.4142* alternating voltage); V
wRthe specified maximum working voltage of-pulsating direct current (1.4142* alternating voltage); V
wmax-maximum the pulsating dc voltage (1.4142* alternating voltage) that allows; I
w-effectively operating current.I
wR-specified effective operating current.
If civil power is AC220, the voltage after rectification is DC311V, and taking every group of LED load as single chips is as example, every chips bears DC52V; As AC110, chip bears DC26V.If the loading power area of pulsating direct current half-wave is 1, referring to Figure 15, it is larger that each LED load in figure (LED module 1 to 6) is loaded power difference, LED module 1 reach pulsating direct current half-wave loading power area 20.68% (for chip rated output 84.4%); And LED module 6 only have 5.11% (for chip rated output 19.2%), be about 1/4th power of module 1, through actual measurement checking, the intrinsic brilliance of module 6 is very low; The power being on average loaded of whole chipset is 52.4% of chip rated output, and the utilance of chip is lower; And the rated output of chipset (dotted line frame area) is the loading power area of pulsating direct current half-wave 159%.Because chip amount of redundancy is excessive, not only chip waste, also causes driving power excessive and waste, and has increased the difficulty that cloth is set up simultaneously.Therefore, under Constant Direct Current state, select the method for chip voltage to have some problems under pulsating direct current state, how to ensure that, under the prerequisite of chip trouble free service, the utilance that improves chip becomes a problem to be solved.
The rated output of setting the LED chip array of 6 series connection loads 1.59 times of power by pulsating direct current half-wave and turns down to 1.2 times that (increase because LED voltage increases electric current, essence is that power damages.1.2 times power surpluses are set and enough ensure that LED is not burnt), referring to Figure 16, if LED chip array chip load power (rectangle dash area area in figure) is pulsating direct current half-wave while loading power (pulsating direct current half-wave part area) 1.2 times, can be extrapolated civil power and be AC220V by Figure 16 mapping time, the carrying voltage of chip array be DC236V;
Referring to Figure 17, LED module 1 is arranged respectively to different magnitudes of voltage to module 6, the chip that can obtain under different bearer magnitude of voltage loads power area (dash area in figure);
Adopt 2*52V+4*35V high voltage chip (model of module 1 and module 2 is that VES-AADBHV45, module 3 are ES-AADBHF40 to module 6) composition serial array, the carrying voltage of chip array is adjusted into DC244V; Make Figure 18, it is 96.67% of pulsating direct current half-wave power area that the chip array of acquisition is loaded power area, and the power that chip array is loaded approaches 1 for perfect condition; The power that now LED chip array is loaded is chip array rated output 77.6%; Experimental verification and estimated value are close.
The module of each voltage section loads power checking: the loading power area of establishing pulsating direct current half-wave is 1, and when voltage is ordinate, easily calculating DC52V chip rated output by Figure 17 is 26.52%, and in like manner, the rated output of DC35V chip is 17.89%; Figure 18 is civil power while being AC220V, the power situation being loaded of the each module of LED chip array; Table 1 is that power that chip array is loaded is while being pulsating direct current half-wave power area 1, line voltage is respectively AC220V, AV246V, each module of AC270V is loaded the situation of power, in table, can find out, only module 3 slightly transships at DC311V and DC348V, but because module 1 and module 2 have margin of power, experimental results show that module 3 can pass through.
In the time of other line voltage grades, optimal way is with reference to above-mentioned carrying out.
Under perfect condition, the checking computations of chip bearing power are as shown in the table:
Claims (1)
- The 1.LED large chip that throws light on, it is characterized in that: comprise that a width is fixed as the first transparency carrier (421) of W, the first transparency carrier (421) is provided with the parallel interface lead of N+1 bar, the first transparency carrier (421) is provided with N LEDs chip (41) and forms LED chip series connection group, every LEDs chip (41) is all between two adjacent interface lead, and the spacing of two adjacent interface lead is W jGequaling W, to subtract interface lead wide again divided by N, and the both positive and negative polarity of every LEDs chip (41) is connected in two adjacent interface lead respectively; And simultaneously multiple LED series connection groups in parallel, make the LED chip array of the N row multirow that the upper formation of the first transparency carrier (421) can extend on the first transparency carrier (421) length direction, and N is the integer between 3 to 7.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256755.3U CN203812914U (en) | 2014-05-20 | 2014-05-20 | LED illumination large chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256755.3U CN203812914U (en) | 2014-05-20 | 2014-05-20 | LED illumination large chip |
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| Publication Number | Publication Date |
|---|---|
| CN203812914U true CN203812914U (en) | 2014-09-03 |
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ID=51451633
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN103985809B (en) * | 2014-05-20 | 2017-05-10 | 贵州光浦森光电有限公司 | Large chip for LED lighting |
| US11152551B2 (en) | 2018-04-27 | 2021-10-19 | Innolux Corporation | Electronic device |
-
2014
- 2014-05-20 CN CN201420256755.3U patent/CN203812914U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015176626A1 (en) * | 2014-05-20 | 2015-11-26 | 贵州光浦森光电有限公司 | Led large chip and optical machine module group |
| CN103985809B (en) * | 2014-05-20 | 2017-05-10 | 贵州光浦森光电有限公司 | Large chip for LED lighting |
| US11152551B2 (en) | 2018-04-27 | 2021-10-19 | Innolux Corporation | Electronic device |
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Granted publication date: 20140903 |