CN206505917U - A kind of rectification integration module - Google Patents

A kind of rectification integration module Download PDF

Info

Publication number
CN206505917U
CN206505917U CN201720184327.8U CN201720184327U CN206505917U CN 206505917 U CN206505917 U CN 206505917U CN 201720184327 U CN201720184327 U CN 201720184327U CN 206505917 U CN206505917 U CN 206505917U
Authority
CN
China
Prior art keywords
controllable silicon
pins
framework
slide glass
poles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201720184327.8U
Other languages
Chinese (zh)
Inventor
何春海
张俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Dongchen Electronics Technology Co Ltd
Original Assignee
Jiangsu Dongchen Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Dongchen Electronics Technology Co Ltd filed Critical Jiangsu Dongchen Electronics Technology Co Ltd
Priority to CN201720184327.8U priority Critical patent/CN206505917U/en
Application granted granted Critical
Publication of CN206505917U publication Critical patent/CN206505917U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Rectifiers (AREA)

Abstract

The utility model discloses a kind of rectification integration module, including framework, controllable silicon and commutation diode, the framework includes controllable silicon slide glass area, diode slide glass area and pin, No. two pins of the controllable silicon slide glass area correspondence, the controlled silicon chip bonding die is in controllable silicon slide glass area, the T1 poles of controllable silicon, T2 poles and G poles are connected respectively to No. three pins of framework, on No. two pins and a pin, four rectifier diode chips distinguish bonding die in four diode slide glass areas on framework, the both positive and negative polarity of rectifier diode chip is concatenated into bridge heap, two extraction poles of bridge heap chip connect No. five pins and No. six pins respectively, controllable silicon is connected with Qiao Dui surfaces.Controllable silicon and rectifier bridge are integrated together to the encapsulation process for reducing device, the number of times of packaging is reduced, the welding times of device and wiring board are reduced, reduce whole manufacturing cost, the volume of device is reduced, contributes to the optimization design of wiring board, the reliability of wiring board is improved.

Description

A kind of rectification integration module
Technical field
The utility model is related to integrated circuit fields, more particularly, to a kind of rectification integration module.
Background technology
In the circuit of many controlled rectifications, all there is the design with one rectifying full bridge of a SCR control, mainly Mentality of designing is exactly to realize that to AC rectification be direct current Electricity Functional using rectifying full bridge, and controllable silicon mainly uses its controllable Switching characteristic, when rectification is needed, controllable silicon is opened, rectifying full bridge work, and AC rectification is direct current;Do not needing When rectification, controllable silicon is closed, and rectifying full bridge does not work, whole circuit cut-off.
In general, a single controllable silicon and a single rectifying full bridge are needed in such circuit, with reference to Fig. 1, an independent silicon-controlled device is in the mill, it is necessary to by controlled silicon chip bonding die on TO-220 frameworks, pass through high temperature Sintering process so that controlled silicon chip is combined closely with framework, then using aluminium wire ultrasonic bonding technique, to controlled silicon chip T1 and G poles are attached with the corresponding pin of framework respectively, then controlled silicon chip and exposed framework are carried out using plastic packaging material Encapsulating, then carries out cutting golden processing to framework.One independent rectifier bridge stack is needed by four rectification chip bonding dies on framework, Subsequent step is consistent with controllable silicon encapsulation process., it is necessary to by the artificial plug-in unit of controllable silicon to circuit in the assembling process of assist side On plate, then welded respectively, after the completion of again by rectifying full bridge plug-in unit to wiring board, once welded.Chip Encapsulation process is cumbersome, and the assembling process of wiring board is also very cumbersome, it is necessary to substantial amounts of manpower and materials, and adds out risk Hidden danger.
Drawbacks described above in view of prior art is, it is necessary to a kind of new integration module.
Utility model content
The purpose of this utility model is to overcome prior art defect, designs a kind of new rectification integration module, effective drop The packaging cost and installation cost of low device, while the space of wiring board can significantly be saved, improve the reliable operation of wiring board Property.
To achieve these goals, the utility model provides a kind of rectification integration module, including framework, controllable silicon and rectification Diode, the framework includes controllable silicon slide glass area, diode slide glass area and a pin to No. six pins, and the controllable silicon is carried Section No. two pins of correspondence, the controlled silicon chip bonding die is in controllable silicon slide glass area, T1 poles, T2 poles and the G poles difference of controllable silicon It is connected on No. three pins of framework, No. two pins and a pin, four rectifier diode chips distinguish bonding die on framework Four diode slide glass areas, the both positive and negative polarity of four rectifier diode chips is concatenated into bridge heap, two extraction poles of bridge heap chip No. five pins and No. six pins are connected respectively, and controllable silicon is connected with Qiao Dui surfaces.
Controllable silicon described in the utility model is connected with Qiao Dui surfaces by aluminium wire, a diameter of 300 μm of aluminium wire, can be born High current.
Merge and be fixedly connected for sintering between controlled silicon chip and rectifier diode chip and framework described in the utility model.
The electrode of controllable silicon described in the utility model and the pin of framework are connected using welding manner.
The both positive and negative polarity of rectifier diode chip described in the utility model is concatenated using welding manner.
AC1 inputs connect No. two pins of integration module, and AC2 inputs connect No. four pins of integration module, pass through After the rectification of integration module, No. six pins of integration module as direct current positive pole, No. five pins as direct current negative pole.
Compared with prior art, the beneficial effects of the utility model are:Rectification integration module described in the utility model, will Controllable silicon and rectifier bridge are integrated together, and effectively reduce the encapsulation process of device, reduce the number of times of packaging, are reduced The welding times of device and wiring board, so that whole manufacturing cost is greatly reduced, while reduce the volume of device, Contribute to the optimization design of wiring board, improve the reliability of wiring board.
Brief description of the drawings
Fig. 1 is the existing line figure described in background technology.
Fig. 2 is the frame construction drawing of rectification integration module described in the utility model.
Fig. 3 is using the line map after rectification integration module described in the utility model.
In figure:Number pin of 1-, No. bis- pins of 2-, No. tri- pins of 3-, No. tetra- pins of 4-, No. five pins of 5-, 6- six draws Pin, 7- frameworks, 8- controllable silicon slide glasses area, 9- diode slide glasses area.
Embodiment
Preferred embodiment of the present utility model is more fully described below with reference to accompanying drawings.
A kind of rectification integration module according to Fig. 3, including framework 7, controllable silicon and commutation diode, the framework 7 Including controllable silicon slide glass area 8, diode slide glass area 9 and a pin to No. six pins (1,2,3,4,5,6), the controllable silicon is carried No. two pins 2 of correspondence of section 8, the controlled silicon chip bonding die is in controllable silicon slide glass area 8, T1 poles, T2 poles and the G poles point of controllable silicon Be not connected to 1 on No. three pins 3 of framework 7, No. two pins 2 and a pin, four rectifier diode chips difference bonding dies in Four diode slide glass areas 9 on framework 7, the both positive and negative polarity of four rectifier diode chips is concatenated into bridge heap, the two of bridge heap chip Individual extraction pole connects No. five pins 5 and No. six pins 6 respectively, and controllable silicon is connected with Qiao Dui surfaces by aluminium wire, and aluminium wire is a diameter of 300 μm, high current can be born.
Merge and be fixedly connected for sintering between controlled silicon chip described in the present embodiment and rectifier diode chip and framework 7.
The electrode of controllable silicon described in the present embodiment is connected with the pin of framework 7 using welding manner.
The both positive and negative polarity of rectifier diode chip described in the present embodiment is concatenated using welding manner.
Rectification integration module described in the present embodiment is connected in circuit, circuit is as shown in figure 3, AC1 inputs are connected No. two pins 2 of integration module, AC2 inputs connect No. four pins 4 of integration module, after the rectification of integration module, collection Into module No. six pins 6 as direct current positive pole, No. five pins 5 as direct current negative pole.

Claims (6)

1. a kind of rectification integration module, including framework (7), controllable silicon and commutation diode, the framework include controllable silicon slide glass Area (8), diode slide glass area (9) and a pin are to No. six pins (1,2,3,4,5,6), it is characterised in that the controllable silicon is carried Section (8) No. two pins (2) of correspondence, the controlled silicon chip bonding die is in controllable silicon slide glass area (8), T1 poles, the T2 poles of controllable silicon It is connected respectively to G poles on No. three pins (3) of framework, No. two pins (2) and a pin (1), four commutation diode cores Piece distinguishes bonding die in four diode slide glass areas (9) on framework (7), and the both positive and negative polarity of four rectifier diode chips is concatenated into bridge Heap, two extraction poles of bridge heap chip connect No. five pins (5) and No. six pins (6) respectively, and controllable silicon is connected with Qiao Dui surfaces.
2. rectification integration module according to claim 1, it is characterised in that the controllable silicon passes through aluminium wire with Qiao Dui surfaces Connection.
3. rectification integration module according to claim 2, it is characterised in that described connection controllable silicon and Qiao Dui surfaces A diameter of 300 μm of aluminium wire.
4. rectification integration module according to claim 1, it is characterised in that controlled silicon chip and the commutation diode core Merge and be fixedly connected for sintering between piece and framework.
5. rectification integration module according to claim 1, it is characterised in that the electrode of the controllable silicon and the pin of framework Connected by the way of welding.
6. rectification integration module according to claim 1, it is characterised in that the both positive and negative polarity of the rectifier diode chip is adopted Concatenated with the mode of welding.
CN201720184327.8U 2017-02-28 2017-02-28 A kind of rectification integration module Expired - Fee Related CN206505917U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720184327.8U CN206505917U (en) 2017-02-28 2017-02-28 A kind of rectification integration module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720184327.8U CN206505917U (en) 2017-02-28 2017-02-28 A kind of rectification integration module

Publications (1)

Publication Number Publication Date
CN206505917U true CN206505917U (en) 2017-09-19

Family

ID=59840408

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720184327.8U Expired - Fee Related CN206505917U (en) 2017-02-28 2017-02-28 A kind of rectification integration module

Country Status (1)

Country Link
CN (1) CN206505917U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109494210A (en) * 2018-12-25 2019-03-19 山东晶导微电子股份有限公司 A kind of half-bridge encapsulating structure
CN110138236A (en) * 2019-05-27 2019-08-16 扬州扬杰电子科技股份有限公司 A kind of new-type rectifier bridge

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109494210A (en) * 2018-12-25 2019-03-19 山东晶导微电子股份有限公司 A kind of half-bridge encapsulating structure
CN110138236A (en) * 2019-05-27 2019-08-16 扬州扬杰电子科技股份有限公司 A kind of new-type rectifier bridge
CN110138236B (en) * 2019-05-27 2024-01-26 扬州扬杰电子科技股份有限公司 Novel rectifier bridge

Similar Documents

Publication Publication Date Title
CN206505917U (en) A kind of rectification integration module
CN107369657A (en) A kind of two-side radiation power model of multizone laid out in parallel
CN102254886A (en) Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module
CN106449883A (en) Laminating and welding machine
CN106972762A (en) Power module
CN201466022U (en) Lead frame and chip connecting structure encapsulated with micro-patch diode
CN102263094A (en) Non-interconnected multi-chip package diode
CN108461459A (en) A kind of cathode docking biphase rectification diode and its manufacturing process
CN204706557U (en) A kind of Intelligent Power Module
CN207602558U (en) A kind of grafting power module package device
CN206163475U (en) Package structure of semiconductor device
CN105374811B (en) A kind of power module
CN107403783A (en) A kind of parallel pole combination, power model and power modules
CN201118457Y (en) Micro surface mount single-phase full wave bridge commutator
CN207165558U (en) A kind of two-side radiation power model of laminated base plate
CN207637789U (en) Three-chip type built-in condenser synchronous rectification diode
CN203536411U (en) Semiconductor packaging structure
CN207602544U (en) A kind of staggered two-side radiation power module of multiple branch circuit
CN203951434U (en) A kind of photovoltaic module and testing apparatus of welding test use
CN208655640U (en) Chip synchronous rectification device
CN203300679U (en) Metal wrap through (MWT) solar battery packaging assembly
CN208507670U (en) A kind of direct insertion rectifier bridge device of band input protection
CN208316589U (en) A kind of direct insertion rectifier bridge device with output protection
CN203883684U (en) Novel square-type rectifying bridge structure
CN201985771U (en) Extra large power rectification electric power electronic device module specially used for ultrasonic bonding machine

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170919

CF01 Termination of patent right due to non-payment of annual fee