CN216928573U - High reverse voltage diode - Google Patents
High reverse voltage diode Download PDFInfo
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- CN216928573U CN216928573U CN202220377883.8U CN202220377883U CN216928573U CN 216928573 U CN216928573 U CN 216928573U CN 202220377883 U CN202220377883 U CN 202220377883U CN 216928573 U CN216928573 U CN 216928573U
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- reverse voltage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
High reverse voltage diode. Relate to a semiconductor technology field, especially relate to high reverse voltage diode. The utility model comprises a first pin, a second pin and a plurality of chips; the plurality of chips are sequentially arranged at intervals along the horizontal direction; the adjacent chips are connected through connecting sheets, and the chips are sequentially connected in series and packaged in the plastic package; the first pin is flat, is connected with the negative electrode of the chip at the head end and extends out of the plastic package body; and the second pin is flat, is connected with the anode of the chip at the tail end and extends out of the plastic package body. The present case adopts frame construction, connects through the connection piece between many chips, establishes ties to realize the ability of high-power reverse voltage, pin (including pin one and pin two) adopt the structural design of frame piece, and the whole thickness of product not only can the attenuate, can also increase heat radiating area.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a high-power reverse voltage diode.
Background
The diode is an electronic device made of semiconductor material, wherein a PN junction is arranged in the diode, lead terminals are arranged at two ends of the PN junction, and the diode has unidirectional current conductivity according to the direction of an applied voltage. The current directivity that most diodes have is commonly referred to as the "rectifying" function.
The high-power diode increases the passing current by setting the PN junction area in the chip, thereby increasing the power. The diode is usually packaged with only one chip, has insufficient voltage resistance, and is easy to break down when applied to a circuit structure with large voltage. In order to solve the problems, the patent document disclosed in the application number 202120528989.9, such as the patent of entitled publication of 2021, 10 and 15, includes an insulating package, in which a first chip, a second chip, a first electrode plate and a second electrode plate are packaged in parallel, a first copper sheet is connected between the first chip and the first electrode plate, a second copper sheet is connected between the first chip and the second chip, and a third copper sheet is connected between the second chip and the second electrode plate; a first bonding block is arranged in the first copper sheet, a second bonding block is arranged in the second copper sheet, and a third bonding block is arranged in the third copper sheet; the first electrode plate is connected with a first pin plate through a first conductive bonding layer; the second electrode sheet is connected with a second pin sheet through a second conductive bonding layer. The structure with the parallel lamination can only place 2 layers of chips at most, and the more chips are placed, the higher the size of the material body is, thus the use requirement of flattening the patch product is violated; in addition, the chips are mutually overlapped, the chips can generate heat after being electrified, the heating of the chips at the upper layer and the lower layer is easy to mutually influence to cause the superposition of heat effect, the increase of power consumption is caused, and the thermal breakdown failure of the device can be caused under the extreme condition.
SUMMERY OF THE UTILITY MODEL
Aiming at the problems, the utility model provides the high-power reverse voltage diode which has compact structure, high preparation efficiency and high heat dissipation performance.
The technical scheme of the utility model is as follows: the high-power reverse voltage diode comprises a pin I, a pin II and a plurality of chips;
the adjacent chips are connected through connecting sheets, and a plurality of chips are sequentially connected in series and packaged in a plastic package;
the first pin is flat, is connected with the negative electrode of the chip at the head end and extends out of the plastic package body;
and the second pin is flat, is connected with the anode of the chip at the tail end and extends out of the plastic package body.
The distance between the adjacent chips is larger than 0.5 mm.
The connecting piece comprises an upper connecting part I, an extending part I and a lower connecting part I which are formed in one step;
the first upper connecting part is connected with the anode of the chip, and the first lower connecting part is connected with the cathode of the adjacent chip.
And a plurality of through holes are formed in the first extending part.
The connecting piece is flat.
The pin II comprises an upper connecting part II, an extending part II and a lower connecting part II which are formed in one step;
the upper connecting part II is connected with the anode of the chip at the tail end, and the lower connecting part II extends out of the plastic package body.
And the distance from the side part of the chip to the junction of the upper connecting part II and the extending part II is not less than 0.1 mm.
And the thickness value of the plastic package body below the second lower connecting part is 4-5 times of the thickness value of the second lower connecting part.
The utility model comprises a first pin, a second pin and a plurality of chips; the plurality of chips are sequentially arranged at intervals along the horizontal direction; the adjacent chips are connected through connecting sheets, and the chips are sequentially connected in series and packaged in the plastic package; the first pin is flat, is connected with the negative electrode of the chip at the head end and extends out of the plastic package body; and the second pin is flat, is connected with the anode of the chip at the tail end and extends out of the plastic package body. The present case adopts frame construction, connects through the connection piece between many chips, establishes ties to realize the ability of high-power reverse voltage, pin (including pin one and pin two) adopt the structural design of frame piece, and the whole thickness of product not only can the attenuate, can also increase heat radiating area.
Drawings
Figure 1 is a schematic view of the structure of the present invention,
figure 2 is a side view of the structure of figure 1,
FIG. 3 is a schematic diagram of a chip structure at the tail end of FIG. 2,
FIG. 4 is a schematic view of the configuration of the recess-receiving area;
in the figure, 1 is a first pin, 2 is a second pin, 3 is a chip, 4 is a connecting sheet, 41 is a first upper connecting part, 42 is a first extending part, 43 is a first lower connecting part, 44 is a groove accommodating area, and 5 is a plastic package body.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The present invention is illustrated in FIGS. 1-3; the high-power reverse voltage diode comprises a pin I1, a pin II 2 and a plurality of chips 3;
the plurality of chips 3 are sequentially arranged at intervals along the horizontal direction (taking the direction of the figure 1 as a reference direction);
the adjacent chips 3 are connected through connecting sheets 4, and a plurality of chips 3 are sequentially connected in series and packaged in a plastic package body 5;
the first pin 1 is flat, is connected with the negative electrode of the chip 3 at the head end, and extends out of the plastic package body 5;
the second pin 2 is flat, is connected with the anode of the chip 3 at the tail end, and extends out of the plastic package body 5.
The present case adopts frame construction, connects through connection piece 4 between many chips 3, establishes ties to realize the ability of high-power reverse voltage, pin (including pin 1 and pin two 2) adopt the structural design of frame piece, and the whole thickness of product not only can the attenuate, can also increase heat radiating area.
The distance between the adjacent chips 3 is larger than 0.5 mm.
The connecting piece 4 comprises an upper connecting part I41, an extending part I42 and a lower connecting part I43 which are formed in one step;
the first upper connecting part 41 is connected with the positive electrode of the chip 3, and the first lower connecting part 43 is connected with the negative electrode of the adjacent chip 3.
As shown in fig. 4, the top of the first lower connecting portion 43 is provided with a groove accommodating area 44 for placing the chip 3, the groove accommodating area 44 is arranged to limit the welding area of the chip 3 within a certain range, so that welding and positioning are facilitated, meanwhile, the side portion of the groove accommodating area 44 can improve the heat dissipation area, the height of the whole product is reduced to a certain extent, and the requirement of miniaturization of a customer is met.
Further, the bottom area of the groove-accommodating section 44 is larger than the bottom area of the chip 3, thereby improving heat dissipation.
A plurality of through holes are formed in the first extension part 42, and the connection stability of the plastic package body 5 is improved through the through holes.
The connecting piece 4 is flat.
The second pin 2 comprises an upper connecting part II, an extending part II and a lower connecting part II which are formed in one step;
the upper connecting part II is connected with the anode of the chip 3 at the tail end, and the lower connecting part II extends out of the plastic package body 5.
The distance from the side part of the chip 3 at the tail end to the junction of the second upper connecting part and the second extending part is not less than 0.1mm, namely the distance L in the figure 3 is not less than 0.1mm, so that the insulation and voltage resistance performance of the device is improved.
The thickness value of the plastic package body 5 positioned below the second lower connecting part is 4-5 times of the thickness value of the second lower connecting part, namely h1 in the figure 3 is 4-5 times of h2, and the insulation strength of the plastic package is guaranteed.
The preparation method of the product comprises the following steps:
s1, welding the chip 3 and the copper sheet (including the first pin 1, the connecting sheets 4 and the second pin 2) together,
s2, welding and connecting the plurality of copper sheets with the chip 3, and gradually overlapping and connecting the copper sheets in series;
and S3, forming a protective shell outside through a plastic packaging process.
The disclosure of the present application also includes the following points:
(1) the drawings of the embodiments disclosed herein only relate to the structures related to the embodiments disclosed herein, and other structures can refer to general designs;
(2) in case of conflict, the embodiments and features of the embodiments disclosed in this application can be combined with each other to arrive at new embodiments;
the above embodiments are only embodiments disclosed in the present disclosure, but the scope of the disclosure is not limited thereto, and the scope of the disclosure should be determined by the scope of the claims.
Claims (8)
1. The high reverse voltage diode is characterized by comprising a pin I, a pin II and a plurality of chips;
the adjacent chips are connected through connecting sheets, and a plurality of chips are sequentially connected in series and packaged in a plastic package;
the first pin is flat, is connected with the negative electrode of the chip at the head end and extends out of the plastic package body;
and the second pin is flat, is connected with the anode of the chip at the tail end and extends out of the plastic package body.
2. The high reverse voltage diode of claim 1, wherein a pitch between adjacent said chips is greater than 0.5 mm.
3. The high reverse voltage diode of claim 1, wherein the connecting pad comprises a first upper connecting portion, a first extending portion and a first lower connecting portion which are formed in one piece;
the first upper connecting part is connected with the anode of the chip, and the first lower connecting part is connected with the cathode of the adjacent chip.
4. The high reverse voltage diode of claim 3, wherein said first extension portion has a plurality of through holes.
5. The high reverse voltage diode of claim 1 or 4, wherein the connecting tab is flat.
6. The high reverse voltage diode of claim 1, wherein the second pin comprises a second upper connection part, a second extension part and a second lower connection part which are formed in one step;
the upper connecting part II is connected with the anode of the chip at the tail end, and the lower connecting part II extends out of the plastic package body.
7. The diode of claim 6, wherein the distance from the side of the chip to the junction of the second upper connecting portion and the second extending portion is not less than 0.1 mm.
8. The diode of claim 6, wherein the thickness of the plastic package under the second lower connecting portion is 4-5 times of the thickness of the second lower connecting portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220377883.8U CN216928573U (en) | 2022-02-24 | 2022-02-24 | High reverse voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220377883.8U CN216928573U (en) | 2022-02-24 | 2022-02-24 | High reverse voltage diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216928573U true CN216928573U (en) | 2022-07-08 |
Family
ID=82268010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220377883.8U Active CN216928573U (en) | 2022-02-24 | 2022-02-24 | High reverse voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216928573U (en) |
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2022
- 2022-02-24 CN CN202220377883.8U patent/CN216928573U/en active Active
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