CN201549505U - Transient Voltage Suppressor Diode Structure in Glass Passivated Encapsulation - Google Patents

Transient Voltage Suppressor Diode Structure in Glass Passivated Encapsulation Download PDF

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Publication number
CN201549505U
CN201549505U CN200920316075.5U CN200920316075U CN201549505U CN 201549505 U CN201549505 U CN 201549505U CN 200920316075 U CN200920316075 U CN 200920316075U CN 201549505 U CN201549505 U CN 201549505U
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China
Prior art keywords
tube cores
transient voltage
electrodes
tube
diode structure
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Expired - Lifetime
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CN200920316075.5U
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Chinese (zh)
Inventor
吴贵松
唐文斌
徐年惠
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China Zhenhua Group Yongguang Electronics Coltd
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China Zhenhua Group Yongguang Electronics Coltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本实用新型公开了一种玻璃钝化封装瞬态电压抑制二极管结构，构造包括2个二极管管芯(1)，每个管芯(1)为一个半导体PN结，在2个管芯(1)之间设有连接件(2)，在2个管芯(1)上分别连接电极(3)，电极(3)连接引线(4)，在管芯(1)、连接件(2)和电极(3)外侧设有玻璃封装体(5)。本实用新型在2颗管芯之间用1颗连接片进行缓冲，可以有效解决材料热膨胀系数差异的问题，提高产品的质量和成品率。经试验，可以在现有技术的基础上提高10％的成品率，降低了生产成本。

Figure 200920316075

The utility model discloses a glass passivation package transient voltage suppression diode structure, the structure includes two diode tube cores (1), each tube core (1) is a semiconductor PN junction, and the two tube cores (1) Connectors (2) are arranged between them, electrodes (3) are respectively connected to the two tube cores (1), the electrodes (3) are connected to lead wires (4), and the tube cores (1), the connectors (2) and the electrodes (3) A glass package (5) is provided on the outside. In the utility model, one connection sheet is used for buffering between two tube cores, which can effectively solve the problem of differences in thermal expansion coefficients of materials and improve product quality and yield. After testing, the yield of finished products can be increased by 10% on the basis of the prior art, and the production cost is reduced.

Figure 200920316075

Description

Glassivation encapsulation transient voltage suppresses diode structure
Technical field
The utility model relates to a kind of glassivation encapsulation transient voltage and suppresses diode structure, belongs to transient voltage and suppresses the diode technologies field.
Background technology
Bidirectional transient voltage suppresses diode and adopts the glassivation entity encapsulation of holding concurrently, and compares with traditional metallic packaging, has advantages such as little, in light weight, the no steam content of volume, no oxygen content exceed standard, casing insulation.But, because it is little that the bidirectional transient voltage of glassivation encapsulation suppresses the diode volume, it is again the entity encapsulation, make these series of products can't reach good heat-radiation effect, after temperature shock and the screening of power ageing, because the influence of internal material thermal expansion coefficient difference, it is higher that product is eliminated ratio.
Summary of the invention
The purpose of this utility model is: provide the glassivation encapsulation transient voltage that a kind of radiating effect is better, rate of finished products is higher to suppress diode structure, to overcome the deficiencies in the prior art.
The utility model is to constitute like this: a kind of glassivation encapsulation transient voltage of the present utility model suppresses diode structure and comprises 2 diode chips, each tube core is a semiconductor PN, between 2 tube cores, be provided with connector, difference connection electrode on 2 tube cores, electrode connects lead-in wire, is provided with glass packages in tube core, connector and the electrode outside.
Above-mentioned connector is circular molybdenum sheet structure, and the round diameter of connector is identical with the diameter of tube core.
The thickness of above-mentioned connector is 0.3 μ m～5 μ m.
Owing to adopted technique scheme, the utility model cushions with 1 brace between 2 tube cores, can effectively solve the problem of material thermal expansion coefficient difference, improves the quality and the rate of finished products of product.Through test, can improve the rate of finished products more than 10% on the basis of existing technology, reduced production cost effectively.
Description of drawings
Accompanying drawing 1 is a structural representation of the present utility model.
Embodiment
Embodiment of the present utility model: as shown in Figure 1, adopt 2 existing silicon bidirectional transient voltages to suppress diode chip 1, each tube core is a semiconductor PN, between 2 tube cores 1, add connector 2, connector 2 adopts conventional metal molybdenum and is made into circular molybdenum sheet structure, the round diameter of connector 2 is made into identical with the diameter of tube core 1, and with the THICKNESS CONTROL of connector 2 scope at 0.3 μ m～5 μ m; On 2 tube cores 1, Connect Power respectively the utmost point 3 with electrode 3 is connected lead-in wire 4, technology is produced glass packages 5 routinely in tube core 1, connector 2 and electrode 3 outsides.

Claims (3)

1.一种玻璃钝化封装瞬态电压抑制二极管结构，该结构包括2个二极管管芯(1)，每个管芯(1)为一个半导体PN结，其特征在于：在2个管芯(1)之间设有连接件(2)，在2个管芯(1)上分别连接电极(3)，电极(3)连接引线(4)，在管芯(1)、连接件(2)和电极(3)外侧设有玻璃封装体(5)。1. A kind of glass passivation package transient voltage suppression diode structure, this structure comprises 2 diode tube cores (1), each tube core (1) is a semiconductor PN junction, it is characterized in that: in 2 tube cores ( 1) There is a connector (2) between them, the electrodes (3) are respectively connected to the two tube cores (1), the electrodes (3) are connected to the lead wires (4), and the tube cores (1), connectors (2) A glass encapsulation body (5) is arranged outside the electrodes (3). 2.根据权利要求1所述的玻璃钝化封装瞬态电压抑制二极管结构，其特征在于：连接件(2)为圆形钼片结构，连接件(2)的圆形直径与管芯(1)的直径相同。2. The glass passivation package transient voltage suppression diode structure according to claim 1, characterized in that: the connector (2) is a circular molybdenum sheet structure, and the circular diameter of the connector (2) is the same as that of the tube core (1 ) have the same diameter. 3.根据权利要求1所述的玻璃钝化封装瞬态电压抑制二极管结构，其特征在于：连接件(2)的厚度为0.3μm～5μm。3. The transient voltage suppressor diode structure encapsulated in glass passivation according to claim 1, characterized in that: the thickness of the connecting piece (2) is 0.3 μm˜5 μm.
CN200920316075.5U 2009-11-27 2009-11-27 Transient Voltage Suppressor Diode Structure in Glass Passivated Encapsulation Expired - Lifetime CN201549505U (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
CN200920316075.5U CN201549505U (en) 2009-11-27 2009-11-27 Transient Voltage Suppressor Diode Structure in Glass Passivated Encapsulation

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102082140A (en) * 2010-12-20 2011-06-01 常州佳讯光电产业发展有限公司 Bilateral high-voltage transient voltage suppressor (TVS)
CN102544112A (en) * 2010-12-07 2012-07-04 中国振华集团永光电子有限公司 Transient voltage suppression diode
CN102709333A (en) * 2012-06-16 2012-10-03 中国振华集团永光电子有限公司 Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof
CN103247582A (en) * 2013-05-10 2013-08-14 昆山东日半导体有限公司 Semiconductor surge suppressor lead package structure
CN103871874A (en) * 2012-12-17 2014-06-18 中国振华集团永光电子有限公司 Manufacturing method and structure of high-power silicon transient voltage suppressor diode
CN113972194A (en) * 2020-07-23 2022-01-25 苏州达晶半导体有限公司 Bidirectional TVS diode
CN120527313A (en) * 2025-07-23 2025-08-22 常州佳讯光电产业发展有限公司 TVS diode based on molybdenum sheet

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102544112A (en) * 2010-12-07 2012-07-04 中国振华集团永光电子有限公司 Transient voltage suppression diode
CN102082140A (en) * 2010-12-20 2011-06-01 常州佳讯光电产业发展有限公司 Bilateral high-voltage transient voltage suppressor (TVS)
CN102709333A (en) * 2012-06-16 2012-10-03 中国振华集团永光电子有限公司 Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof
CN103871874A (en) * 2012-12-17 2014-06-18 中国振华集团永光电子有限公司 Manufacturing method and structure of high-power silicon transient voltage suppressor diode
CN103247582A (en) * 2013-05-10 2013-08-14 昆山东日半导体有限公司 Semiconductor surge suppressor lead package structure
CN103247582B (en) * 2013-05-10 2015-07-01 昆山东日半导体有限公司 Semiconductor surge suppressor lead package structure
CN113972194A (en) * 2020-07-23 2022-01-25 苏州达晶半导体有限公司 Bidirectional TVS diode
CN120527313A (en) * 2025-07-23 2025-08-22 常州佳讯光电产业发展有限公司 TVS diode based on molybdenum sheet

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Granted publication date: 20100811