CN211957633U - Semiconductor rectifier device - Google Patents
Semiconductor rectifier device Download PDFInfo
- Publication number
- CN211957633U CN211957633U CN202020811746.1U CN202020811746U CN211957633U CN 211957633 U CN211957633 U CN 211957633U CN 202020811746 U CN202020811746 U CN 202020811746U CN 211957633 U CN211957633 U CN 211957633U
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- China
- Prior art keywords
- lead
- strip
- diode chip
- edge
- lead strip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model discloses a semiconductor rectifier, including being located diode chip, first lead wire strip and second lead wire strip, the upper end and the lower extreme of first lead wire strip are supporting part and first pin portion respectively, have a first portion of bending between the supporting part of first lead wire strip and the first pin portion, the upper end and the lower extreme of second lead wire strip are weld part and second pin portion respectively; the edge of the supporting part of the first lead strip is provided with at least 2 first through holes, the edge of each first through hole is provided with a first flanging part opposite to the diode chip, and the edge of the welding part of the second lead strip is provided with at least 2 second through holes. The utility model discloses semiconductor rectifier device has avoided the soldering paste to spill over rosin joint and the area of contact that leads to and has reduced to improve the life of device, be favorable to further reducing contact resistance.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a semiconductor rectifier device.
Background
With the continuous development of electronic products, lightness, smallness and thinness become important marks of electronic complete machine products. However, to miniaturize the entire electronic device, the weight reduction of the electronic components is first to be solved. SMD, miniaturized electronic components also are the main direction that electron manufacturers continuously researched and developed in recent years, and present SOD encapsulation stack mode adopts overlap line formula structure mostly, and its pin adopts "Z" style of calligraphy pin structure, but this kind of structure exists the rosin joint and the area of contact that lead to easily the soldering paste spills over to influence the life of device. How to overcome the above technical problems has been the direction of efforts of those skilled in the art.
Disclosure of Invention
The utility model aims at providing a semiconductor rectifier device, this semiconductor rectifier device have avoided the soldering paste to spill over rosin joint and the area of contact that leads to and reduce to improve the life of device, be favorable to further reducing contact resistance.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a semiconductor rectifier device comprises a diode chip, a first lead strip and a second lead strip, wherein the upper end and the lower end of the first lead strip are respectively a supporting part and a first lead part, a first bending part is arranged between the supporting part and the first lead part of the first lead strip, the upper end and the lower end of the second lead strip are respectively a welding part and a second lead part, a second bending part is arranged between the welding part and the second lead part of the second lead strip, an epoxy packaging body is coated on the diode chip, the supporting part of the first lead strip and the welding part of the second lead strip, and the lower end and the upper end of the diode chip are respectively and electrically connected with the supporting part of the first lead strip and the welding part of the second lead strip;
the edge of the supporting part of the first lead strip is provided with at least 2 first through holes, the edge of each first through hole is provided with a first flanging part opposite to the diode chip, the edge of the welding part of the second lead strip is provided with at least 2 second through holes, and the edge of each second through hole is provided with a second flanging part opposite to the diode chip.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the lower end of the diode chip is electrically connected with the support part of the first lead bar through the soldering tin layer.
2. In the above scheme, the upper end of the diode chip is electrically connected with the welding part of the second lead bar through the soldering tin layer.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the utility model discloses semiconductor rectifier device, the edge of the supporting part of its first lead strip is opened has 2 at least first through-holes, and the edge of this first through-hole has the first turn-ups portion that carries on the back with the diode chip, the edge of the weld part of second lead strip is opened has 2 at least second through-holes, and the edge of this second through-hole has the second turn-ups portion that carries on the back with the diode chip, has avoided the rosin joint and the area of contact reduction that the solder paste spills over and leads to, has improved the supporting part of lead strip and weld part and diode chip electrical contact performance and roughness greatly to the life of device has been improved; in addition, the edge of the through hole of the lead line is provided with a flanging part, which is beneficial to further reducing the contact resistance, thereby further improving the stability of the device.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional structure of a semiconductor rectifier device according to the present invention;
fig. 2 is a schematic diagram of a cross-sectional structure of a semiconductor rectifier device according to the present invention.
In the above drawings: 1. a diode chip; 2. a first lead strip; 21. a support portion; 22. a first lead part; 23. a first bending portion; 3. a second lead strip; 31. welding the part; 32. a second lead portion; 33. a second bending portion; 4. an epoxy package; 5. a first through hole; 6. a first burring; 7. a second through hole; 8. a second burring; 9. and a solder layer.
Detailed Description
Example 1: a semiconductor rectifying device comprises a diode chip 1, a first lead strip 2 and a second lead strip 3, wherein the upper end and the lower end of the first lead strip 2 are respectively a supporting part 21 and a first lead part 22, a first bending part 23 is arranged between the supporting part 21 and the first lead part 22 of the first lead strip 2, the upper end and the lower end of the second lead strip 3 are respectively a welding part 31 and a second lead part 32, a second bending part 33 is arranged between the welding part 31 and the second lead part 32 of the second lead strip 3, an epoxy packaging body 4 is coated on the diode chip 1, the supporting part 21 of the first lead strip 2 and the welding part 31 of the second lead strip 3, and the lower end and the upper end of the diode chip 1 are respectively and electrically connected with the supporting part 21 of the first lead strip 2 and the welding part 31 of the second lead strip 3;
the edge of the supporting portion 21 of the first lead bar 2 is provided with at least 2 first through holes 5, the edge of the first through hole 5 is provided with a first flanging portion 6 opposite to the diode chip 1, the edge of the welding portion 31 of the second lead bar 3 is provided with at least 2 second through holes 7, and the edge of the second through hole is provided with a second flanging portion 8 opposite to the diode chip 1.
Example 2: a semiconductor rectifying device comprises a diode chip 1, a first lead strip 2 and a second lead strip 3, wherein the upper end and the lower end of the first lead strip 2 are respectively a supporting part 21 and a first lead part 22, a first bending part 23 is arranged between the supporting part 21 and the first lead part 22 of the first lead strip 2, the upper end and the lower end of the second lead strip 3 are respectively a welding part 31 and a second lead part 32, a second bending part 33 is arranged between the welding part 31 and the second lead part 32 of the second lead strip 3, an epoxy packaging body 4 is coated on the diode chip 1, the supporting part 21 of the first lead strip 2 and the welding part 31 of the second lead strip 3, and the lower end and the upper end of the diode chip 1 are respectively and electrically connected with the supporting part 21 of the first lead strip 2 and the welding part 31 of the second lead strip 3;
the edge of the supporting portion 21 of the first lead bar 2 is provided with at least 2 first through holes 5, the edge of the first through hole 5 is provided with a first flanging portion 6 opposite to the diode chip 1, the edge of the welding portion 31 of the second lead bar 3 is provided with at least 2 second through holes 7, and the edge of the second through hole is provided with a second flanging portion 8 opposite to the diode chip 1.
The lower end of the diode chip 1 is electrically connected to the support portion 21 of the first lead bar 2 via the solder layer 9.
The upper end of the diode chip 1 and the soldering portion 31 of the second lead bar 3 are electrically connected to each other through a solder layer 9.
When the semiconductor rectifying device is adopted, at least 2 first through holes are formed in the edge of the supporting portion of the first lead strip, the edge of each first through hole is provided with a first flanging portion opposite to the diode chip, at least 2 second through holes are formed in the edge of the welding portion of the second lead strip, and the edge of each second through hole is provided with a second flanging portion opposite to the diode chip, so that the cold solder and the reduction of the contact area caused by the overflow of the solder paste are avoided, the electrical contact performance and the flatness of the supporting portion of the lead strip and the welding portion and the diode chip are greatly improved, and the service life of the device is prolonged; in addition, the edge of the through hole of the lead line is provided with a flanging part, which is beneficial to further reducing the contact resistance, thereby further improving the stability of the device.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (3)
1. A semiconductor rectifying device characterized in that: comprises a diode chip (1), a first lead strip (2) and a second lead strip (3), the upper end and the lower end of the first lead strip (2) are respectively provided with a supporting part (21) and a first lead part (22), a first bending part (23) is arranged between the supporting part (21) and the first pin part (22) of the first lead strip (2), the upper end and the lower end of the second lead strip (3) are respectively a welding part (31) and a second lead part (32), a second bending part (33) is arranged between the welding part (31) of the second lead strip (3) and the second lead part (32), an epoxy packaging body (4) is coated on the diode chip (1), the supporting part (21) of the first lead strip (2) and the welding part (31) of the second lead strip (3), the lower end and the upper end of the diode chip (1) are respectively and electrically connected with the supporting part (21) of the first lead strip (2) and the welding part (31) of the second lead strip (3);
the edge of the supporting part (21) of the first lead strip (2) is provided with at least 2 first through holes (5), the edge of each first through hole (5) is provided with a first flanging part (6) opposite to the diode chip (1), the edge of the welding part (31) of the second lead strip (3) is provided with at least 2 second through holes (7), and the edge of each second through hole is provided with a second flanging part (8) opposite to the diode chip (1).
2. The semiconductor rectifying device according to claim 1, wherein: the lower end of the diode chip (1) is electrically connected with the supporting part (21) of the first lead bar (2) through a soldering tin layer (9).
3. The semiconductor rectifying device according to claim 1, wherein: the upper end of the diode chip (1) is electrically connected with the welding part (31) of the second lead bar (3) through a soldering tin layer (9).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020811746.1U CN211957633U (en) | 2020-05-15 | 2020-05-15 | Semiconductor rectifier device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020811746.1U CN211957633U (en) | 2020-05-15 | 2020-05-15 | Semiconductor rectifier device |
Publications (1)
Publication Number | Publication Date |
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CN211957633U true CN211957633U (en) | 2020-11-17 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202020811746.1U Active CN211957633U (en) | 2020-05-15 | 2020-05-15 | Semiconductor rectifier device |
Country Status (1)
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CN (1) | CN211957633U (en) |
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2020
- 2020-05-15 CN CN202020811746.1U patent/CN211957633U/en active Active
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