CN210325794U - High-voltage-resistance ultrafast-recovery semiconductor component with transient voltage suppression function - Google Patents
High-voltage-resistance ultrafast-recovery semiconductor component with transient voltage suppression function Download PDFInfo
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- CN210325794U CN210325794U CN201921177366.0U CN201921177366U CN210325794U CN 210325794 U CN210325794 U CN 210325794U CN 201921177366 U CN201921177366 U CN 201921177366U CN 210325794 U CN210325794 U CN 210325794U
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- chip
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- conducting strip
- high withstand
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a semiconductor components and parts of high withstand voltage ultrafast recovery with transient voltage restraines belongs to semiconductor discrete device technical field. The chip packaging structure comprises an SKY chip, an STD chip, a TVS chip, conducting strips, a lead terminal and a plastic package body, wherein the SKY chip and the STD chip are welded and combined through a welding flux and are connected in series between an upper conducting strip and a lower conducting strip, the TVS chip is connected in parallel between the two conducting strips, the conducting strips and the chip are packaged in the plastic package body, and the upper conducting strip and the lower conducting strip are respectively led out through the lead terminal; the utility model discloses semiconductor components and parts product has high withstand voltage, ultrafast recovery characteristics, and the cost of manufacture is low, maintains the stability of components and parts voltage through the TVS chip, prevents that inside SKY chip and STD chip from being punctured under reverse overvoltage's the condition, has improved the life of product.
Description
Technical Field
The utility model belongs to the technical field of the discrete device of semiconductor, concretely relates to semiconductor components and parts of high withstand voltage ultrafast recovery with transient voltage restraines.
Background
The semiconductor discrete device industry belongs to the subdivision industry of the semiconductor industry. The semiconductor industry is divided according to manufacturing technology, and can be specifically subdivided into three major branches: the integrated circuit is a microelectronic technology with an integrated circuit as a core and is used for realizing processing, storage and conversion of information; the power electronic technology taking a semiconductor discrete device as a main factor is used for realizing the processing and conversion of electric energy; and thirdly, the photoelectronic technology taking a photoelectronic device as a main shaft is used for realizing the conversion effect of semiconductor light and electrons.
Semiconductor discrete devices are used as intermediate products between the electronic complete machine industry and the upstream raw material industry, and are one of the basic and core fields of the semiconductor industry. The existing semiconductor discrete device can not achieve both high withstand voltage and ultra-fast recovery. The reverse recovery time of the high-voltage resistant product is slow; the product with fast reverse recovery time has low reverse withstand voltage.
In the industry, the voltage resistance is improved by connecting a plurality of groups of fast recovery chips in series, but the processing cost is high, and in the case of reverse overvoltage, the internal chips are easy to break down and have short service life.
SUMMERY OF THE UTILITY MODEL
To defect and not enough problem among the prior art, the utility model provides a semiconductor components and parts of high withstand voltage ultrafast recovery with transient voltage suppression has high withstand voltage, ultrafast recovery characteristics, and the cost of manufacture is low, maintains the stability of components and parts voltage through the TVS chip, prevents that inside SKY chip and STD chip from being punctured under reverse overvoltage's the condition, has improved the life of product.
The utility model provides a technical scheme that its technical problem adopted does:
the utility model provides a semiconductor components and parts of high withstand voltage ultrafast recovery with transient voltage restraines, includes SKY chip, STD chip, TVS chip, conducting strip, lead terminal and plastic-sealed body, SKY chip and STD chip pass through the solder welding combination and establish ties between upper and lower two conducting strips, and the parallelly connected TVS chip that has again between two conducting strips, conducting strip and chip package are in the plastic-sealed body, upper and lower conducting strip is drawn forth through the lead terminal respectively.
Furthermore, the conducting strips and the chips are welded by adopting solders.
Furthermore, the plastic package body adopts epoxy resin.
Furthermore, the plastic package body can be processed into a square facing package or a cylindrical axial package.
The utility model discloses following beneficial effect has: the semiconductor component product obtained by the utility model has the double characteristics of high voltage resistance and ultrafast recovery; the STD chip and the SKY chip are connected in series and then connected in parallel with the TVS chip, so that the manufacturing cost is low, the power consumption is low, the size is small, the processing is easy, and the mass production can be realized.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The following describes in detail embodiments of the present invention with reference to the accompanying drawings.
As shown in fig. 1, a high withstand voltage ultrafast recovery semiconductor device with transient voltage suppression includes an SKY chip 1, an STD chip 2, a TVS chip 3, conducting strips 4, a lead terminal 5 and a plastic package body 6, wherein the SKY chip 1 and the STD chip 2 are connected in series between an upper conducting strip 4 and a lower conducting strip 4 through a solder welding combination, the TVS chip 3 is connected in parallel between the two conducting strips 4, the conducting strips 4 and the chip are packaged in the plastic package body 6, and the upper conducting strip 4 and the lower conducting strip 4 are respectively led out through the lead terminal 5.
Further, the conducting strips 4 and the chips are welded by adopting solders 11.
Furthermore, the plastic package body 6 is made of epoxy resin, so that good insulation and protection effects are achieved.
Further, the plastic package body 6 can be processed into a square facing package or a cylindrical axial package to meet different product requirements.
The utility model discloses a with SKY chip 1, STD chip 2 and TVS chip combination, utilize SKY chip 1's reverse fast recovery and forward voltage to fall the characteristic, combine the reverse high withstand voltage characteristic of STD chip 2 to the semiconductor components and parts that make to obtain have high withstand voltage, ultrafast recovery characteristics, and the ultrafast recovery can reach 8 ns. The TVS chip 3 is used for maintaining the voltage stability of the components, so that the internal SKY chip 1 and the STD chip 2 are prevented from being broken down under the condition of reverse overvoltage, and the service life of the product is prolonged. The utility model discloses a cluster, parallelly connected between the multiple chip, with its integrated semiconductor components and parts on, realized the product miniaturization, moreover the utility model discloses low power dissipation in the use, workable, the cost of manufacture is low, can realize batch production.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. The present invention is not limited by the above embodiments, and the description in the above embodiments and the description is only for illustrating the principle of the present invention, and the present invention will have various changes and improvements without departing from the spirit and scope of the present invention, and these changes and improvements all fall into the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (4)
1. A high withstand voltage ultrafast recovery semiconductor component with transient voltage suppression is characterized in that: including SKY chip, STD chip, TVS chip, conducting strip, lead terminal and plastic-sealed body, SKY chip and STD chip pass through solder welding combination and establish ties between two upper and lower conducting strips, and the parallelly connected TVS chip that has again between two conducting strips, conducting strip and chip package are in the plastic-sealed body, upper and lower conducting strip is drawn forth through the lead terminal respectively.
2. A high withstand voltage ultrafast recovery semiconductor device with transient voltage suppression as claimed in claim 1, wherein: and the conducting strips and the chips are welded by adopting solder.
3. A high withstand voltage ultrafast recovery semiconductor device with transient voltage suppression as claimed in claim 1, wherein: the plastic package body adopts epoxy resin.
4. A high withstand voltage ultrafast recovery semiconductor device with transient voltage suppression as claimed in claim 1 or 3, wherein: the plastic package body can be processed into a square veneering package or a cylindrical axial package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921177366.0U CN210325794U (en) | 2019-07-25 | 2019-07-25 | High-voltage-resistance ultrafast-recovery semiconductor component with transient voltage suppression function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921177366.0U CN210325794U (en) | 2019-07-25 | 2019-07-25 | High-voltage-resistance ultrafast-recovery semiconductor component with transient voltage suppression function |
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| Publication Number | Publication Date |
|---|---|
| CN210325794U true CN210325794U (en) | 2020-04-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921177366.0U Active CN210325794U (en) | 2019-07-25 | 2019-07-25 | High-voltage-resistance ultrafast-recovery semiconductor component with transient voltage suppression function |
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| CN (1) | CN210325794U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086446A (en) * | 2020-08-14 | 2020-12-15 | 苏州旭芯翔智能设备有限公司 | Rectifier bridge |
-
2019
- 2019-07-25 CN CN201921177366.0U patent/CN210325794U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086446A (en) * | 2020-08-14 | 2020-12-15 | 苏州旭芯翔智能设备有限公司 | Rectifier bridge |
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