CN103427409B - A kind of Surge Protector - Google Patents
A kind of Surge Protector Download PDFInfo
- Publication number
- CN103427409B CN103427409B CN201310362794.1A CN201310362794A CN103427409B CN 103427409 B CN103427409 B CN 103427409B CN 201310362794 A CN201310362794 A CN 201310362794A CN 103427409 B CN103427409 B CN 103427409B
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- CN
- China
- Prior art keywords
- diode chip
- underframe
- upper frame
- sealed body
- plastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The present invention discloses a kind of Surge Protector, belong to field of semiconductor devices, comprise plastic-sealed body, upper frame, underframe, and be welded on the diode chip for backlight unit on upper frame and underframe, the paired assembled package of above-mentioned upper frame and underframe, a part is outer to be exposed at outside plastic-sealed body, forms lead terminal, another part is encapsulated in plastic-sealed body, for welding diode chip for backlight unit; Described diode chip for backlight unit comprises a high-voltage diode chip and a transient voltage suppressor diode chip, and two chips are encapsulation or stack Series Package horizontally. Above-mentioned Surge Protector adopts dual chip integration packaging, and use number of devices is few, footprints is little, and reliability is high, low in energy consumption.
Description
Technical field
The present invention relates to a kind of Surge Protector, belong to field of semiconductor devices.
Background technology
RCD absorbing circuit is made up of resistance R s, capacitor C s and diode VDs, and as shown in Figure 1, its Main Function is the spike that absorbs the moment generation of switching tube disconnection, avoids switching tube to cause punch through damage. Mainly there is following defect in the RCD absorbing circuit of prior art: 1, component number is many, and 2, footprints is large, power consumption is large, 3, capacitance is difficult determines, generally need rule of thumb calculate.
In view of this, the inventor studies this, develops a kind of Surge Protector specially for RCD spike absorbing circuit, and this case produces thus.
Summary of the invention
The Surge Protector that the object of this invention is to provide a kind of RCD of being applicable to spike absorbing circuit, has the features such as components and parts are few, reliability is high, low in energy consumption.
To achieve these goals, solution of the present invention is:
A kind of Surge Protector, comprise plastic-sealed body, upper frame, underframe, and be welded on the diode chip for backlight unit on upper frame and underframe, the paired assembled package of above-mentioned upper frame and underframe, a part is outer to be exposed at outside plastic-sealed body, form lead terminal, another part is encapsulated in plastic-sealed body, for welding diode chip for backlight unit; Described diode chip for backlight unit comprises a high-voltage diode chip and a transient voltage suppressor diode chip, and two chips are encapsulation or stack Series Package horizontally.
Above-mentioned Surge Protector comprises 2 groups of upper frames and underframe; form 4 lead terminals, between one group of upper frame and underframe, weld high-voltage diode chip, between another group upper frame and underframe, weld transient voltage suppressor diode chip; above-mentioned two chips horizontally encapsulate, and are not connected mutually.
Above-mentioned Surge Protector comprises 1 group of upper frame and underframe, forms 2 lead terminals, high-voltage diode chip and the transient voltage suppressor diode chip of welding stack series connection between upper frame and underframe.
Above-mentioned Surge Protector is mainly used in spike absorbing circuit; when after spike and input voltage stack that switching tube shutdown moment produces; high-voltage diode chip forward conduction; transient voltage suppressor diode chip is breakdown; simultaneously by spike clamp, thus the not breakdown damage of protection switch pipe.
Compared with prior art, the present invention has following beneficial effect: (one) adopts dual chip integration packaging, uses number of devices few; (2) only needing a device be alternative resistance of the prior art, electric capacity, three devices of diode, and footprints is little, reliability is high, low in energy consumption; (3) suppress spike simultaneously, there is clamp characteristic, absorb energy loss little.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
Brief description of the drawings
Fig. 1 is the RCD absorbing circuit figure of prior art scheme;
Fig. 2 is embodiment 1 Surge Protector internal structure schematic diagram;
Fig. 3 is that the A-A of Fig. 2 is to cutaway view;
Fig. 4 is the circuit diagram of embodiment 1;
Fig. 5 is embodiment 2 Surge Protector internal structure schematic diagrames;
Fig. 6 is that the B-B of Fig. 5 is to cutaway view;
Fig. 7 implements 2 application circuit.
Label declaration:
Plastic-sealed body 1;
Lead terminal 21～24;
Upper frame 31,33, underframe 32,34;
High-voltage diode chip 41; Transient voltage suppressor diode chip 42.
Detailed description of the invention
Embodiment 1:
As in Figure 2-4, a kind of Surge Protector, comprise plastic-sealed body 1, be encapsulated in two groups of upper frames 31 in plastic-sealed body 1, 33 and underframe 32, 34, and be welded on the high-voltage diode chip 41 on upper frame 31 and underframe 32, be welded on the transient voltage suppressor diode core 42 on upper frame 33 and underframe 34, above-mentioned upper frame 31, 33 and underframe 32, 34 paired assembled package, a part is outer to be exposed at outside plastic-sealed body 1, form lead terminal 21, 22, 23, 24, another part is encapsulated in plastic-sealed body 1, be used for welding high-voltage diode chip 41 and transient voltage suppressor diode chip 42, described diode chip for backlight unit 41 and 42 all, in same level, is encapsulated in plastic-sealed body 1 side by side, is not connected mutually.
Embodiment 2:
As shown in Fig. 5-6, a kind of Surge Protector, comprise plastic-sealed body 1, be encapsulated in one group of upper frame 31 and underframe 32 in plastic-sealed body 1, and be welded on high-voltage diode chip 41 and the transient voltage suppressor diode core 42 on upper frame 31 and underframe 32, above-mentioned upper frame 31 and the paired assembled package of underframe 32, a part is outer to be exposed at outside plastic-sealed body 1, form lead terminal 21 and 22, another part is encapsulated in plastic-sealed body 1, the high-voltage diode chip 41 and the transient voltage suppressor diode chip 42 that are cascaded for welding stack, plastic-sealed body 1 can be sheet shape, cylindrical or other shapes.
As shown in Figure 7; above-mentioned Surge Protector is mainly used in spike absorbing circuit; when after spike and input voltage stack that switching tube shutdown moment produces; high-voltage diode chip 41 forward conductions; transient voltage suppressor diode chip 42 is breakdown; simultaneously by spike clamp, thus the not breakdown damage of protection switch pipe.
Above-described embodiment and graphic and non-limiting product form of the present invention and style, suitable variation or modification that any person of an ordinary skill in the technical field does it, all should be considered as not departing from patent category of the present invention.
Claims (1)
1. a Surge Protector, it is characterized in that: comprise plastic-sealed body, upper frame, underframe, and be welded on the diode chip for backlight unit on upper frame and underframe, the paired assembled package of above-mentioned upper frame and underframe, a part is outer to be exposed at outside plastic-sealed body, form lead terminal, another part is encapsulated in plastic-sealed body, for welding diode chip for backlight unit; Described diode chip for backlight unit comprises a high-voltage diode chip and a transient voltage suppressor diode chip; Described Surge Protector comprises 2 groups of upper frames and underframe; form 4 lead terminals, between one group of upper frame and underframe, weld high-voltage diode chip, between another group upper frame and underframe, weld transient voltage suppressor diode chip; above-mentioned two chips horizontally encapsulate, and are not connected mutually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310362794.1A CN103427409B (en) | 2013-08-20 | 2013-08-20 | A kind of Surge Protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310362794.1A CN103427409B (en) | 2013-08-20 | 2013-08-20 | A kind of Surge Protector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103427409A CN103427409A (en) | 2013-12-04 |
| CN103427409B true CN103427409B (en) | 2016-05-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310362794.1A Active CN103427409B (en) | 2013-08-20 | 2013-08-20 | A kind of Surge Protector |
Country Status (1)
| Country | Link |
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| CN (1) | CN103427409B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109509741A (en) * | 2017-09-15 | 2019-03-22 | 金龙联合汽车工业（苏州）有限公司 | A kind of integrated diode |
| CN108428697A (en) * | 2017-11-09 | 2018-08-21 | 上海长园维安微电子有限公司 | A kind of low-capacitance bidirectional band negative resistance TVS device |
| CN108417566A (en) * | 2017-12-21 | 2018-08-17 | 上海长园维安微电子有限公司 | Two access TVS devices of one kind and preparation method thereof |
| CN114709199B (en) * | 2022-06-07 | 2022-11-01 | 东莞市中汇瑞德电子股份有限公司 | Relay back-voltage suppression module packaging structure, packaging method and follow current circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437156A (en) * | 2011-12-13 | 2012-05-02 | 杭州士兰集成电路有限公司 | Ultralow capacitance transient voltage suppression device and manufacturing method thereof |
| CN202352653U (en) * | 2011-11-30 | 2012-07-25 | 常州星海电子有限公司 | Minitype patch-type diode |
| CN102709333A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070159744A1 (en) * | 2006-01-06 | 2007-07-12 | Ramen Dutta | High voltage pin for low voltage process |
| CN202309503U (en) * | 2011-11-10 | 2012-07-04 | 珠海天兆新能源技术有限公司 | Novel photovoltaic grid-connected inverter IGBT snubber circuit |
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2013
- 2013-08-20 CN CN201310362794.1A patent/CN103427409B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202352653U (en) * | 2011-11-30 | 2012-07-25 | 常州星海电子有限公司 | Minitype patch-type diode |
| CN102437156A (en) * | 2011-12-13 | 2012-05-02 | 杭州士兰集成电路有限公司 | Ultralow capacitance transient voltage suppression device and manufacturing method thereof |
| CN102709333A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103427409A (en) | 2013-12-04 |
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Address after: 312000 Longshan Software Park, Shaoxing Economic Development Zone, Shaoxing, Zhejiang Applicant after: ZHEJIANG MINGDE MICROELECTRONIC CO., LTD. Address before: 312000 Longshan Software Park, Shaoxing Economic Development Zone, Shaoxing, Zhejiang Applicant before: Shaoxing Rising-sun Technology Co., Ltd. |
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