CN204046405U - Gate pole absorbs and suppresses circuit module - Google Patents

Gate pole absorbs and suppresses circuit module Download PDF

Info

Publication number
CN204046405U
CN204046405U CN201420504686.3U CN201420504686U CN204046405U CN 204046405 U CN204046405 U CN 204046405U CN 201420504686 U CN201420504686 U CN 201420504686U CN 204046405 U CN204046405 U CN 204046405U
Authority
CN
China
Prior art keywords
igbt
circuit
gate pole
pipe
pipe igbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn - After Issue
Application number
CN201420504686.3U
Other languages
Chinese (zh)
Inventor
牛勇
张晋芳
陈宏�
刘革莉
尹梅
赵一洁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yongji Xinshisu Electric Equipment Co Ltd
Original Assignee
Yongji Xinshisu Electric Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yongji Xinshisu Electric Equipment Co Ltd filed Critical Yongji Xinshisu Electric Equipment Co Ltd
Priority to CN201420504686.3U priority Critical patent/CN204046405U/en
Application granted granted Critical
Publication of CN204046405U publication Critical patent/CN204046405U/en
Withdrawn - After Issue legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The utility model relates to the anti-interference and over-voltage protection technology of IGBT, is specially a kind of gate pole and absorbs and suppress circuit module.Solve the protective circuit anti-electromagnetic interference capability that current IGBT power device adopts poor, to make IGBT easily to mislead the technical problem even damaged without over-voltage suppression defencive function.A kind of gate pole absorption suppresses circuit module, comprises the absorption of pipe IGBT gate pole and suppresses circuit and lower pipe IGBT gate pole to absorb suppression circuit; Described upper pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D1, D2, D3, fast diode D4 and resistance R3, and described filtering absorbs voltage stabilizing circuit and comprises electric capacity C1, C2, C3, C4, bi-directional voltage stabilizing diode D7, D8 and resistance R1, R2.The utility model can realize the reliably working of drive singal, and the instantaneous high impulse of reverse voltage produced when effectively suppressing IGBT to turn off, the IGBT of effective protection.

Description

Gate pole absorbs and suppresses circuit module
Technical field
The utility model relates to the anti-interference and over-voltage protection technology of IGBT, is specially a kind of gate pole and absorbs and suppress circuit module.
Background technology
In recent years, IGBT power device is applied more and more extensive in power transformation circuit, under IGBT is operated in high voltage and current state, periphery electromagnetic environment is very complicated, from the drive singal of IGBT drive plate in the process being transferred to IGBT, may electromagnetic interference be subject to, cause IGBT to mislead or on off state out of control, and then cause fault or device failure; In addition, IGBT, in turn off process, can produce the voltage upper punch of moment between C, E terminal, the high backward voltage of this moment sometimes up to hundreds of to upper kilovolt, great threat is caused to the trouble free service of IGBT.In prior art, mostly the IGBT of most of low-voltage-grade (3300V) is gate pole to absorb to suppress circuit to be arranged on drive circuit board when applying.There is obvious shortcoming in this technology: 1, anti-electromagnetic interference capability is poor, and when driver output is longer to the circuit of IGBT, signal is easily disturbed, IGBT can mislead or switch out of control; 2, without over-voltage suppression defencive function, therefore IGBT may damage.
Summary of the invention
The protective circuit anti-electromagnetic interference capability that the utility model adopts for solution current IGBT power device is poor, make IGBT easily to mislead the technical problem even damaged without over-voltage suppression defencive function, provides a kind of gate pole to absorb and suppresses circuit module.
The utility model adopts following technical scheme to realize: a kind of gate pole absorption suppresses circuit module, comprises the absorption of pipe IGBT gate pole and suppress circuit and lower pipe IGBT gate pole to absorb suppression circuit; Described upper pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D1, D2, D3, fast diode D4 and resistance R3, and the negative electrode of described D3 is connected with the anode of D2, and the negative electrode of D2 is connected with the anode of D1; The negative electrode of D1 is connected with the collector electrode of upper pipe IGBT; The anode of D4 is connected with the anode of D3; The negative electrode of R3 and D4 is connected; The other end of R3 is connected with the gate pole of upper pipe IGBT; Described filtering absorbs voltage stabilizing circuit and comprises electric capacity C1, C2, C3, C4, bi-directional voltage stabilizing diode D7, D8 and resistance R1, R2; Between the gate pole that described D7, R1, C1, C2 are connected to pipe IGBT and emitter, one end of D8 is connected with the gate pole of upper pipe IGBT, and the other end of D8 is connected with the emitter of upper pipe IGBT by R2; One end of described C3, C4 is all connected with the other end of D8; The other end of C3, C4 is all connected with the emitter of upper pipe IGBT; Described lower pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D11, D12, D13, fast diode D14 and resistance R13, and the negative electrode of described D13 is connected with the anode of D12, and the negative electrode of D12 is connected with the anode of D11; The negative electrode of D11 is connected with the emitter of upper pipe IGBT; The anode of D14 is connected with the anode of D13; The negative electrode of R13 and D14 is connected; The other end of R13 is connected with the gate pole of lower pipe IGBT; Described filtering absorbs voltage stabilizing circuit and comprises electric capacity C11, C12, C13, C14, bi-directional voltage stabilizing diode D17, D18 and resistance R11, R12; Between the gate pole that described D17, R11, C11, C12 are connected to lower pipe IGBT and emitter, one end of D18 is connected with the gate pole of lower pipe IGBT, and the other end of D18 is connected with the emitter of lower pipe IGBT by R12; One end of described C13, C14 is all connected with the other end of D18; The other end of C13, C14 is all connected with the emitter of lower pipe IGBT.
Upper pipe IGBT absorbs with the gate pole of lower pipe IGBT and suppresses circuit theory identical, and the collector electrode (C1) of lower pipe circuit and emitter (E) connecting terminals of upper pipe circuit are connected together.
Overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D1 ~ D3 (D11 ~ D13), fast diode D4 (D14) and resistance R3 (R13), and over-voltage suppression diode plays pressure stabilization function, and D14 is one-way conduction.In the reverse turn off process of IGBT, when high voltage momentary spike on collector electrode C is more than D1 ~ D3 (D11 ~ D13) puncture voltage, voltage on over-voltage suppression diode will be stabilized in rated voltage by clamp, now, electric current will be had to flow to gate pole G from collector electrode C through overvoltage suppression circuit, slow down IGBT turn-off speed, thus effectively suppress the further rising of reverse overvoltage, and resistance R3 (R13) plays metering function.
Filtering absorb voltage stabilizing circuit comprise electric capacity C1 ~ C4(C11 ~ C14), bi-directional voltage stabilizing diode D7 ~ D8(D17 ~ D18) and resistance R1-R2(R11-R12), this circuit has two parts function, is described below:
On the one hand, high pressure spike is there is for preventing gate driver circuit, by D7 (D17), D8 (D18), R2(R12), C3 ~ C4(C13 ~ C14) realize IGBT G, E terminal between the clamp voltage stabilizing of driving pulse, its voltage stabilizing value is general close with driving voltage value, ensures driving voltage to be clamped at below 20V.
On the other hand, when IGBT turns off, the grid radio pressure of IGBT is easy to the interference by IGBT and circuit parasitic parameter, making grid penetrate voltage fluctuation causes device to mislead, for preventing this phenomenon from occurring, devise by resistance R1 (R11), C1 ~ C2(C11 ~ C12) resistance-capacitance circuit that forms, not only can absorb interference, adjustment C1 ~ C2(C11 ~ C12 can also be passed through) capacitance, improves performance when IGBT turns on and off.
The utility model drives the demand of anti-interference and reverse overvoltage protection from improving IGBT; adopt filtering absorbing circuit and overvoltage suppression circuit; solve following aspect problem: 1, solve driver output in the process of IGBT, the problem that signal is easily disturbed.When 2, solving IGBT overcurrent turn-off function, inverse overvoltage is too large, easily damages the problem of IGBT.
The utility model can realize the reliably working of drive singal, and the instantaneous high impulse of reverse voltage produced when effectively suppressing IGBT to turn off, the IGBT of effective protection, the cost saved maintenance and safeguard, has obvious economic and social benefit.
Accompanying drawing explanation
Fig. 1 upper pipe IGBT gate pole described in the utility model absorbs and suppresses electrical block diagram.
Fig. 2 lower pipe IGBT gate pole described in the utility model absorbs and suppresses electrical block diagram.
Fig. 3 the utility model adopts the circuit integrity topology layout figure after PrimePACK encapsulation.
Embodiment
A kind of gate pole absorption suppresses circuit module, comprises the absorption of pipe IGBT gate pole and suppresses circuit and lower pipe IGBT gate pole to absorb suppression circuit; Described upper pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D1, D2, D3, fast diode D4 and resistance R3, and the negative electrode of described D3 is connected with the anode of D2, and the negative electrode of D2 is connected with the anode of D1; The negative electrode of D1 is connected with the collector electrode of upper pipe IGBT; The anode of D4 is connected with the anode of D3; The negative electrode of R3 and D4 is connected; The other end of R3 is connected with the gate pole of upper pipe IGBT; Described filtering absorbs voltage stabilizing circuit and comprises electric capacity C1, C2, C3, C4, bi-directional voltage stabilizing diode D7, D8 and resistance R1, R2; Between the gate pole that described D7, R1, C1, C2 are connected to pipe IGBT and emitter, one end of D8 is connected with the gate pole of upper pipe IGBT, and the other end of D8 is connected with the emitter of upper pipe IGBT by R2; One end of described C3, C4 is all connected with the other end of D8; The other end of C3, C4 is all connected with the emitter of upper pipe IGBT; Described lower pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D11, D12, D13, fast diode D14 and resistance R13, and the negative electrode of described D13 is connected with the anode of D12, and the negative electrode of D12 is connected with the anode of D11; The negative electrode of D11 is connected with the emitter of upper pipe IGBT; The anode of D14 is connected with the anode of D13; The negative electrode of R13 and D14 is connected; The other end of R13 is connected with the gate pole of lower pipe IGBT; Described filtering absorbs voltage stabilizing circuit and comprises electric capacity C11, C12, C13, C14, bi-directional voltage stabilizing diode D17, D18 and resistance R11, R12; Between the gate pole that described D17, R11, C11, C12 are connected to lower pipe IGBT and emitter, one end of D18 is connected with the gate pole of lower pipe IGBT, and the other end of D18 is connected with the emitter of lower pipe IGBT by R12; One end of described C13, C14 is all connected with the other end of D18; The other end of C13, C14 is all connected with the emitter of lower pipe IGBT.
Described upper pipe IGBT gate pole absorbs and suppresses circuit and lower pipe IGBT gate pole to absorb suppression circuit employing 1700V grade PrimePACK encapsulation; Pcb board pad is provided with terminal C5, G4, E3 terminal be connected with emitter auxiliary terminal E with collector electrode auxiliary terminal C, the gate terminal G of pipe on IGBT respectively and G1, E2 terminal be connected with emitter auxiliary terminal E with the gate terminal G of pipe under IGBT respectively, between each terminal by bolt with drive Wiring harness terminal and be connected.
As shown in Figure 3, terminal C5, G4, E3 connect collector electrode auxiliary terminal C, gate terminal G and the emitter auxiliary terminal E of pipe on IGBT respectively, and terminal G1, E2 are connected to gate terminal G and the emitter auxiliary terminal E of pipe under IGBT.Pcb board pad is directly utilized to be coupled together by the Wiring harness terminal of bolt and driver output.
D1 ~ D3 is unidirectional over-voltage suppression diode (voltage stabilizing value 300V--440V), D4 is fast diode, R3 is resistance (resistance 1R--5R), they constitute the overvoltage suppression circuit of pipe on IGBT jointly, the reverse overvoltage of effective clamp IGBT, and by providing drive current to gate pole, slowing down the speed that IGBT turns off, the continuation of the reverse overvoltage of containment is further risen.
C1 ~ C4 is electric capacity (C1 capacitance 50nf-200nf, C2 capacitance 1nf-10nf, C3 capacitance 50nf-200nf, C4 capacitance 1nf-10nf), D7 ~ D8 is bi-directional voltage stabilizing diode (D7 voltage stabilizing value 16V-18V, D8 voltage stabilizing value 18V-20V), R1 ~ R2 is resistance, the filtering that they constitute pipe on IGBT jointly absorbs voltage stabilizing circuit, ensure that gate-drive is interference-free, and adjusts IGBT turn-off characteristic flexibly by C1, C2 electric capacity.
D11 ~ D13 is unidirectional over-voltage suppression diode, D14 is fast diode, R13 is resistance, they constitute the overvoltage suppression circuit of pipe under IGBT jointly, the reverse overvoltage of effective clamp IGBT, and by providing drive current to gate pole, slowing down the speed that IGBT turns off, the continuation of the reverse overvoltage of containment is further risen.
C11 ~ C14 is electric capacity, D17 ~ D18 is bi-directional voltage stabilizing diode, and R11 ~ R12 is resistance, and the filtering that they constitute pipe under IGBT jointly absorbs voltage stabilizing circuit, ensure that gate-drive is interference-free, and adjust IGBT turn-off characteristic flexibly by C11, C12 electric capacity.
All electronic devices and components on circuit module all adopt paster to encapsulate.Filtering absorbs the components and parts of voltage stabilizing circuit as far as possible near gate pole and the emitter of IGBT, to make voltage stabilizing assimilation effect the most desirable.

Claims (2)

1. gate pole absorbs and suppresses a circuit module, it is characterized in that, comprises the absorption of pipe IGBT gate pole and suppresses circuit and the absorption of lower pipe IGBT gate pole to suppress circuit; Described upper pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D1, D2, D3, fast diode D4 and resistance R3, and the negative electrode of described D3 is connected with the anode of D2, and the negative electrode of D2 is connected with the anode of D1; The negative electrode of D1 is connected with the collector electrode of upper pipe IGBT; The anode of D4 is connected with the anode of D3; The negative electrode of R3 and D4 is connected; The other end of R3 is connected with the gate pole of upper pipe IGBT; Described filtering absorbs voltage stabilizing circuit and comprises electric capacity C1, C2, C3, C4, bi-directional voltage stabilizing diode D7, D8 and resistance R1, R2; Between the gate pole that described D7, R1, C1, C2 are connected to pipe IGBT and emitter, one end of D8 is connected with the gate pole of upper pipe IGBT, and the other end of D8 is connected with the emitter of upper pipe IGBT by R2; One end of described C3, C4 is all connected with the other end of D8; The other end of C3, C4 is all connected with the emitter of upper pipe IGBT; Described lower pipe IGBT gate pole absorbs and suppresses circuit to comprise overvoltage suppression circuit and filtering absorption voltage stabilizing circuit; Described overvoltage suppression circuit comprises unidirectional over-voltage suppression diode D11, D12, D13, fast diode D14 and resistance R13, and the negative electrode of described D13 is connected with the anode of D12, and the negative electrode of D12 is connected with the anode of D11; The negative electrode of D11 is connected with the emitter of upper pipe IGBT; The anode of D14 is connected with the anode of D13; The negative electrode of R13 and D14 is connected; The other end of R13 is connected with the gate pole of lower pipe IGBT; Described filtering absorbs voltage stabilizing circuit and comprises electric capacity C11, C12, C13, C14, bi-directional voltage stabilizing diode D17, D18 and resistance R11, R12; Between the gate pole that described D17, R11, C11, C12 are connected to lower pipe IGBT and emitter, one end of D18 is connected with the gate pole of lower pipe IGBT, and the other end of D18 is connected with the emitter of lower pipe IGBT by R12; One end of described C13, C14 is all connected with the other end of D18; The other end of C13, C14 is all connected with the emitter of lower pipe IGBT.
2. gate pole as claimed in claim 1 absorbs and suppresses circuit module, it is characterized in that, described upper pipe IGBT gate pole absorption suppression circuit and lower pipe IGBT gate pole absorb and suppress circuit to adopt 1700V grade PrimePACK to encapsulate; Pcb board pad is provided with terminal C5, G4, E3 terminal be connected with emitter auxiliary terminal E with collector electrode auxiliary terminal C, the gate terminal G of pipe on IGBT respectively and G1, E2 terminal be connected with emitter auxiliary terminal E with the gate terminal G of pipe under IGBT respectively, between each terminal by bolt with drive Wiring harness terminal and be connected.
CN201420504686.3U 2014-09-03 2014-09-03 Gate pole absorbs and suppresses circuit module Withdrawn - After Issue CN204046405U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420504686.3U CN204046405U (en) 2014-09-03 2014-09-03 Gate pole absorbs and suppresses circuit module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420504686.3U CN204046405U (en) 2014-09-03 2014-09-03 Gate pole absorbs and suppresses circuit module

Publications (1)

Publication Number Publication Date
CN204046405U true CN204046405U (en) 2014-12-24

Family

ID=52247032

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420504686.3U Withdrawn - After Issue CN204046405U (en) 2014-09-03 2014-09-03 Gate pole absorbs and suppresses circuit module

Country Status (1)

Country Link
CN (1) CN204046405U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104158385A (en) * 2014-09-03 2014-11-19 永济新时速电机电器有限责任公司 Gate absorption and suppression circuit module
CN110474625A (en) * 2019-07-15 2019-11-19 西安中车永电电气有限公司 Gate pole for two-tube IGBT absorbs inhibition and short-circuit protection circuit
CN111756221A (en) * 2019-03-27 2020-10-09 上海诺基亚贝尔股份有限公司 Method and circuit for inhibiting generation of over-high voltage during starting

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104158385A (en) * 2014-09-03 2014-11-19 永济新时速电机电器有限责任公司 Gate absorption and suppression circuit module
CN104158385B (en) * 2014-09-03 2016-08-24 永济新时速电机电器有限责任公司 Gate pole absorbs suppression circuit module
CN111756221A (en) * 2019-03-27 2020-10-09 上海诺基亚贝尔股份有限公司 Method and circuit for inhibiting generation of over-high voltage during starting
CN111756221B (en) * 2019-03-27 2022-05-10 上海诺基亚贝尔股份有限公司 Method and circuit for inhibiting generation of over-high voltage during starting
CN110474625A (en) * 2019-07-15 2019-11-19 西安中车永电电气有限公司 Gate pole for two-tube IGBT absorbs inhibition and short-circuit protection circuit
CN110474625B (en) * 2019-07-15 2020-09-25 西安中车永电电气有限公司 Gate absorption suppression and short-circuit protection circuit for double-tube IGBT

Similar Documents

Publication Publication Date Title
CN204906177U (en) IGBT turn -offs overvoltage active clamping circuit
CN102315632B (en) Driving circuit for inhibiting over current of IGBT (Insulated Gate Bipolar Transistor)
CN204046405U (en) Gate pole absorbs and suppresses circuit module
CN104158385B (en) Gate pole absorbs suppression circuit module
CN104052048A (en) Active clamping circuit driven by IGBT
CN202772560U (en) IGBT current foldback circuit and inductive load control circuit
CN202333786U (en) Drive circuit for restraining IGBT (Insulated Gate Bipolar Transistor) overcurrent
CN202978213U (en) Power supply overvoltage protection circuit
CN203415971U (en) Anti-overvoltage surge protection control circuit designed based on field-effect transistor
CN103683260A (en) IGBT (Insulated Gate Bipolar Transistor) series connection voltage equalizing circuit
CN203312794U (en) Three-wire system surge protection circuit
CN203645319U (en) IGBT series voltage-sharing circuit
CN202663372U (en) Insulated gate bipolar transistor driving protector
CN102185286A (en) High-power insulated gate bipolar transistor (IGBT) redundancy driving protection circuit
CN202111614U (en) Trigger circuit used for thyristor and fast bypass apparatus
CN204068233U (en) The active clamp circuit that a kind of IGBT drives
CN204424877U (en) A kind of IGBT module Over Current Protection System
CN102856893B (en) Dynamic active clamping circuit and electronic equipment
CN203103298U (en) IGBT (Insulated Gate Bipolar Transistor) device with grid protection
CN205070778U (en) Voltage spike snubber circuit and switching power supply circuit
CN202817739U (en) Three-phase short-circuit fault current limiter based on IGBT
CN204333949U (en) A kind of protection against lightning surge circuit for navigation mark equipment
CN205005032U (en) Electric circuit
CN204030577U (en) A kind of surge impact protection circuit for direct current machine and air conditioner
CN203339686U (en) Constant current source short circuit protection inhibition circuit

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C25 Abandonment of patent right or utility model to avoid double patenting
AV01 Patent right actively abandoned

Granted publication date: 20141224

Effective date of abandoning: 20160824