CN203218259U - Ultra-fast recovery high-voltage diode - Google Patents
Ultra-fast recovery high-voltage diode Download PDFInfo
- Publication number
- CN203218259U CN203218259U CN2013201847073U CN201320184707U CN203218259U CN 203218259 U CN203218259 U CN 203218259U CN 2013201847073 U CN2013201847073 U CN 2013201847073U CN 201320184707 U CN201320184707 U CN 201320184707U CN 203218259 U CN203218259 U CN 203218259U
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- CN
- China
- Prior art keywords
- die
- ultra
- tube core
- voltage diode
- fast recovery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The utility model relates to an ultra-fast recovery high-voltage diode which is composed of a die, a body and leads. The body made of epoxy resin is internally provided with the die. Two ends of the die are welded with the leads. The area of the die meets a formula: (forward current (A))/(40A/cm2)>the area of die>(forward current (A))/(50/cm2). The die is formed by laminating multilayer silicon chips made of platinum diffusion technology. The body is externally sealed as a cuboid structure with a size of 7*7*21mm. The ends of the leads are of a round table structure. The diameter N of the bottom end of each round table is 2.5mm, the thickness L of each round table is 1mm, and the diameter D of each lead is 1.16-1.2mm. The ultra-fast recovery high-voltage diode is advantaged by meeting requirements of a high-frequency and high-voltage power supply for ultrahigh-frequency characteristics, employing platinum diffusion technology, realizing ultra-fast recovery and solving contradiction between reverse recovery time and forward voltage drop.
Description
Technical field
The utility model relates to a kind of high-voltage diode, is specifically related to a kind of high-voltage diode of Ultrafast recovery.
Background technology
Along with the development of electronic product, for big electric current, fast recover, the demand of high voltage diode constantly increases, though Schottky diode has big electric current, the fast characteristic of recovering, its reverse voltage can only be accomplished not satisfy high-tension requirement below the 200V; Common high-voltage diode can satisfy high-tension requirement, but for big electric current with recover soon and seem helpless, particularly high-frequency and high-voltage power supply is for the requirement of the frequency characteristic of diode.So need a kind of big electric current, fast recovery, high-tension diode of being applicable to, satisfy the demand of high frequency, high-power high voltage source.
Summary of the invention
For overcoming the deficiencies in the prior art, the purpose of this utility model provides and a kind ofly is applicable to big electric current, but the Ultrafast recovery high-voltage diode that snap back recovers.
For achieving the above object, the utility model is achieved through the following technical solutions:
A kind of Ultrafast recovery high-voltage diode is made of tube core, body, lead-in wire, is provided with tube core in the body that is made of epoxy resin, tube core two ends welding lead, and described die area satisfies:
＞die area＞
The silicon chip stack that described tube core utilizes the platinum diffusion technology to make by multilayer constitutes, and described body covering is rectangular structure, is of a size of 7*7*21mm, described lead-in wire end is frustum cone structure, round platform bottom diameter is N=2.5mm, and round platform thickness is L=1mm, and diameter wire is D=1.16～1.2mm.
Compared with prior art, the beneficial effects of the utility model are:
Can satisfy high frequency, high voltage source for the requirement of hyperfrequency characteristic, adopt the platinum diffusion technology to make, realize Ultrafast recovery, solve the contradiction between reverse recovery time and the forward voltage drop.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Among the figure: 1-tube core 2-body 3-lead-in wire.
Embodiment
Below in conjunction with Figure of description the utility model is described in detail, but should be noted that enforcement of the present utility model is not limited to following execution mode.
See Fig. 1, a kind of Ultrafast recovery high-voltage diode is made of tube core 1, body 2, lead-in wire 3, is provided with tube core 1 in the body 2 that is made of epoxy resin, tube core 1 two ends welding lead 3, and described tube core 1 area satisfies:
＞die area＞
Wherein, A is current unit, ampere; The silicon chip stack that described tube core 1 utilizes the platinum diffusion technology to make by multilayer constitutes, and body 2 coverings are rectangular structure, are of a size of 7*7*21mm, described lead-in wire 3 ends are frustum cone structure, round platform bottom diameter is N=2.5mm, and round platform thickness is L=1mm, and 3 diameters that go between are D=1.16～1.2mm.
Because the silicon chip of tube core 1 adopts the platinum diffusion technology to make, and makes the reverse recovery time of high-voltage diode less than 40ns, realizes Ultrafast recovery.
Tube core 1 and lead-in wire 3 are welded together, and after it is carried out suitable processing, encapsulate and be made into diode.
The utility model can satisfy high frequency, high voltage source for the requirement of hyperfrequency characteristic, adopts the platinum diffusion technology to make, and realizes Ultrafast recovery, solves the contradiction between reverse recovery time and the forward voltage drop.
Claims (1)
1. a Ultrafast recovery high-voltage diode is made of tube core, body, lead-in wire, is provided with tube core in the body that is made of epoxy resin, and tube core two ends welding lead is characterized in that, described die area satisfies:
＞die area＞
The silicon chip stack that described tube core utilizes the platinum diffusion technology to make by multilayer constitutes, and described body covering is rectangular structure, is of a size of 7*7*21mm, described lead-in wire end is frustum cone structure, round platform bottom diameter is N=2.5mm, and round platform thickness is L=1mm, and diameter wire is D=1.16～1.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201847073U CN203218259U (en) | 2013-04-12 | 2013-04-12 | Ultra-fast recovery high-voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013201847073U CN203218259U (en) | 2013-04-12 | 2013-04-12 | Ultra-fast recovery high-voltage diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203218259U true CN203218259U (en) | 2013-09-25 |
Family
ID=49207772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013201847073U Expired - Fee Related CN203218259U (en) | 2013-04-12 | 2013-04-12 | Ultra-fast recovery high-voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203218259U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155104A (en) * | 2017-12-27 | 2018-06-12 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages fast-recovery commutation silicon stack |
-
2013
- 2013-04-12 CN CN2013201847073U patent/CN203218259U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155104A (en) * | 2017-12-27 | 2018-06-12 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages fast-recovery commutation silicon stack |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130925 Termination date: 20140412 |