CN106298725A - The encapsulating structure of series diode - Google Patents
The encapsulating structure of series diode Download PDFInfo
- Publication number
- CN106298725A CN106298725A CN201610848725.5A CN201610848725A CN106298725A CN 106298725 A CN106298725 A CN 106298725A CN 201610848725 A CN201610848725 A CN 201610848725A CN 106298725 A CN106298725 A CN 106298725A
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- Prior art keywords
- pin
- backlight unit
- diode chip
- encapsulating structure
- pole
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 238000010923 batch production Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to the encapsulating structure of a kind of series diode, including the first diode chip for backlight unit, second diode chip for backlight unit and metal framework, described metal framework includes three pins independent of each other, it is respectively the first pin, second pin and auxiliary pin, one pole of the first diode chip for backlight unit is attached on described auxiliary pin, the opposite polarity pole of second diode chip for backlight unit electrically connects with described auxiliary pin, the pole that second diode chip for backlight unit polarity is identical is attached on a pin in the first pin and the second pin, another pin of another pole and its of first diode chip for backlight unit electrically connects；The same pole of two diode chip for backlight unit is attached in the individual pin of metal framework, and another pole and each individual pin of the two diode chip for backlight unit are electrically connected, it is achieved the series connection of two diode chip for backlight unit；Two diode chip for backlight unit are attached in the same way on this metal framework and realize Series Package, and simple in construction is easy to process, can save cost with automatic batch production.
Description
Technical field
The present invention relates to diode package field, particularly relate to the encapsulating structure of a kind of series diode.
Background technology
The series connection of diode can reach the purpose that rated insulation voltage is added, practical, often uses in circuit design
Arrive, use will bring the biggest facility to actual circuit design if being encapsulated, it is not necessary to use two single diodes
Realize cascaded structure.
At present, the parallel packaging structure of diode is commonplace, and it uses symmetric form frame structure, relatively simple convenience,
If realizing the Series Package of diode in the symmetric form frame structure that this tradition is usual, it is necessary to by the electricity of two diode chip for backlight unit
Pole a positive and a negative is welded on conductive frame, the most difficult processing, and especially during batch production, efficiency is low, poor reliability,
The Series Package structure making diode cannot come into operation in a large number.
Summary of the invention
Based on this, it is necessary to provide the encapsulating structure of a kind of series diode, simple in construction, easy to process, can be automatic
Change batch production, save cost.
A kind of encapsulating structure of series diode, including: the first diode chip for backlight unit, the second diode chip for backlight unit and metal frame
Frame, described metal framework includes three pins independent of each other, the respectively first pin, the second pin and auxiliary pin, described
One pole of the first diode chip for backlight unit is attached on described auxiliary pin, the opposite polarity pole of described second diode chip for backlight unit and institute
Stating auxiliary pin electrical connection, the pole that described second diode chip for backlight unit polarity is identical is attached to described first pin and second
On one of them pin of pin, another with described first pin and the second pin of another pole of described first diode chip for backlight unit
One pin electrical connection.
Wherein in an embodiment, it is one the most cloudy that described first diode chip for backlight unit is attached on described auxiliary pin
Pole.
Wherein in an embodiment, the opposite polarity pole of described second diode chip for backlight unit is passed through with described auxiliary pin
Electric wire connects, and another pole of described first diode chip for backlight unit is passed through with another pin in described first pin and the second pin
Electric wire connects.
Wherein in an embodiment, described first pin, the second pin and described auxiliary pin are arranged side by side, and described
One pin and the second pin are arranged on the both sides of described auxiliary pin.
Wherein in an embodiment, described metal framework top is provided with the through hole for being mechanically connected.
Wherein in an embodiment, described metal framework includes being mechanically connected district, chip region from top to bottom successively
And pin area, described first diode chip for backlight unit, the second diode chip for backlight unit and described electric wire are arranged on described chip region, described through hole
It is arranged on described mechanical connection district.
Wherein in an embodiment, the epoxy resin that described chip region is encapsulated in insulation is the most internal, exposes described machinery
Bonding pad and pin area.
Wherein in an embodiment, described mechanical connection district and chip region are all encapsulated in the epoxy resin body of insulation
In, expose described pin area and through hole.
Wherein in an embodiment, the surface area of the pin that described first diode chip for backlight unit attaches and described two or two pole
The difference of the surface area of the pin that die attaches is in preset range.
Wherein in an embodiment, described electric wire is aluminum steel or copper cash.
The encapsulating structure of above-mentioned series diode, including the first diode chip for backlight unit, the second diode chip for backlight unit and metal framework,
Described metal framework includes three pins independent of each other, the respectively first pin, the second pin and auxiliary pin, described first
One pole of diode chip for backlight unit is attached on described auxiliary pin, and the opposite polarity pole of described second diode chip for backlight unit is auxiliary with described
Helping pin to electrically connect, the pole that described second diode chip for backlight unit polarity is identical is attached to described first pin and the second pin
One of them pin on, another in another pole of described first diode chip for backlight unit and described first pin and the second pin
Pin electrically connects；The same pole of two diode chip for backlight unit is attached in the individual pin of metal framework, and by the two two pole
Another pole of die and the electrical connection of each individual pin, it is achieved the series connection of two diode chip for backlight unit；Two diode chip for backlight unit are with same
The mode of sample is attached on this metal framework and realizes Series Package, and simple in construction is easy to process, can with automatic batch production,
Save cost.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, embodiment will be described below
The accompanying drawing used required in is briefly described, it should be apparent that, the accompanying drawing in describing below is only some of the present invention
Embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to attached according to these
Figure obtains the accompanying drawing of other embodiments.
Fig. 1 is the structure chart of the encapsulating structure of series diode in first embodiment；
Fig. 2 is the equivalent circuit diagram that in first embodiment, the encapsulating structure of series diode is corresponding；
Fig. 3 is the structure chart of the encapsulating structure of series diode in the second embodiment；
Fig. 4 is the equivalent circuit diagram that in the second embodiment, the encapsulating structure of series diode is corresponding；
Fig. 5 is the structure chart of the encapsulating structure of series diode in the 3rd embodiment；
Fig. 6 is the structure chart of the encapsulating structure of series diode in the 4th embodiment；
Fig. 7 is the structure chart of the encapsulating structure of series diode in the 5th embodiment.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and
It is not used in the restriction present invention.
Unless otherwise defined, all of technology used herein and scientific terminology and the technical field belonging to the present invention
The implication that technical staff is generally understood that is identical.The term used the most in the description of the invention is intended merely to describe tool
The purpose of the embodiment of body, it is not intended that in limiting the present invention.Term as used herein " and/or " include one or more phase
Arbitrary and all of combination of the Listed Items closed.
In the present embodiment, the encapsulating structure of this series diode includes first diode chip for backlight unit the 10, second diode core
Sheet 20 and metal framework 30, described metal framework 30 includes three pins independent of each other, the respectively first pin 31, second draws
Foot 33 and auxiliary pin 32, a pole of described first diode chip for backlight unit 10 is attached on described auxiliary pin 32, and the described 2nd 2
The opposite polarity pole of pole die 20 electrically connects with described auxiliary pin 32, and described second diode chip for backlight unit 20 polarity is identical
One pole is attached on one of them pin of described first pin 31 and the second pin 33, described first diode chip for backlight unit 10
Another pole electrically connect with another pin in described first pin 31 and the second pin 33.
The same pole of the first diode chip for backlight unit 10 and the second diode chip for backlight unit 20 is attached to the difference on metal framework 30
On pin, the pin that another pole of the second diode chip for backlight unit 20 attaches with the first diode chip for backlight unit 10 is electrically connected, i.e. achieves
One pole of the first diode chip for backlight unit 10 is connected with the electrode of the second diode chip for backlight unit 20 opposite polarity.Again by the first diode chip for backlight unit
The electrode as this encapsulating structure is drawn in 10 and second another poles not being electrically connected between diode chip for backlight unit 20, i.e. realizes
The series connection of two diodes.Two diode chip for backlight unit paster mode on this metal framework 30 is consistent, simplifies encapsulation side
Formula, is particularly suited for batch production, during paster, it is only necessary to attached in the same way by each diode chip for backlight unit
On metal framework 30, automation mechanized operation can be used to realize, simple and reliable, save cost.
Wherein in an embodiment, seeing Fig. 1, described first diode chip for backlight unit 10 is attached on described auxiliary pin 32
An extremely negative electrode.The negative electrode of the first diode chip for backlight unit 10 is attached to the auxiliary pin 32 of metal material by the way of welding
On, the second opposite polarity pole of diode chip for backlight unit 20, i.e. anode electrically connects with this auxiliary pin 32, i.e. achieves the one or two pole
The negative electrode of die 10 and the anode electrical connection of the second diode chip for backlight unit 20.The pole that second diode chip for backlight unit 20 polarity is identical,
I.e. negative electrode is attached on the second pin 33, and anode and first pin 31 of the first diode chip for backlight unit 10 electrically connect.By the one or two pole
The anode of die 10 draws the positive pole as encapsulating structure by the first pin, is passed through by the negative electrode of the second diode chip for backlight unit 20
Second pin draws the negative pole as this encapsulating structure.See Fig. 2, i.e. achieve the Series Package of two diodes, two two
Die paster mode on this metal framework 30 in pole is consistent, is negative pole and attaches, simple to operate.
Same, it is also possible to the positive pole of two diode chip for backlight unit is attached on different pins, it is achieved Series Package.
Though Diode series uses can increase reverse voltage endurance capability, but in practice, two diodes of series connection are subject to
Pressure may be unequal, and the terminal connected by two diodes is drawn as auxiliary pin 32, may be used for testing two two poles
The terminal voltage of pipe, and actual bear the most pressure, and then can be external according to actual operating state and concrete application demand
The buffer circuit such as resistance and electric capacity, adjusts the dividing potential drop situation of two diode chip for backlight unit, can adjust to dividing potential drop and uniformly can also adjust
Whole to unbalanced-voltage-division, determine according to the actual requirements.
Seeing Fig. 3, Fig. 3 is the structure chart of the encapsulating structure of series diode in the second embodiment.
In the present embodiment, the negative electrode of the second diode chip for backlight unit 20 is attached on the first pin 31, the second diode chip for backlight unit
The anode of 20 electrically connects with the auxiliary pin 32 of metal, can be connected by electric wire 40, and this electric wire 40 can be aluminum steel or copper cash,
The negative electrode of the first diode chip for backlight unit 10 is attached on this auxiliary pin 32 by the way of welding, i.e. achieves the second diode core
The anode of sheet 20 and the negative electrode electrical connection of the first diode chip for backlight unit 10, by the anode of the first diode chip for backlight unit 10 by the second pin
33 draw the positive pole as this encapsulating structure, are drawn as this envelope by the first pin 31 by the negative pole of the second diode chip for backlight unit 20
The negative pole of assembling structure.See Fig. 4, i.e. achieve another encapsulating structure, to adapt to different application scenarios and demand, practical
Property is strong.
Wherein in an embodiment, described metal framework 30 top is provided with the through hole 35 for being mechanically connected.Permissible
By this through hole 35, this encapsulating structure is dispelled the heat by this encapsulating structure lock on a heat sink, or act on other applied field
Jing Zhong.
Wherein in an embodiment, described first pin the 31, second pin 33 and described auxiliary pin 32 are arranged side by side,
Described first pin 31 and the second pin 33 are arranged on the both sides of described auxiliary pin 32.Described metal framework 30 can be plane
Structure, the metal framework 30 of plane is convenient to be produced, paster, processing, it is simple to mass production.Three pins are independent of one another, mutually
Insulation, as the carrier of diode chip for backlight unit, realizes the series connection of diode by the way of wiring.
Wherein in an embodiment, seeing Fig. 1, described metal framework 30 includes being mechanically connected from top to bottom successively
District 100, chip region 200 and pin area 300, described first diode chip for backlight unit the 10, second diode chip for backlight unit 20 and described electric wire 40
Being arranged on described chip region 200, described through hole 35 is arranged on described mechanical connection district 100, and described chip region 200 is encapsulated in insulation
Epoxy resin this is the most internal.
In the epoxy resin body 34 being partially encapsulated in insulation that encapsulating structure is electrically connected so that this encapsulating structure becomes
One entirety being connected to each other, and protect the part of this electrical connection not by external influence, strengthen stablizing of this encapsulating structure
Property and reliability, and by exposed outside for the top of the metal framework 30 at through hole 35 place, the heat radiation of this encapsulating structure can be strengthened
Performance.
Wherein in an embodiment, see Fig. 5, described mechanical connection district 100 and chip region 200 are all encapsulated in described
In the epoxy resin body 34 of insulation, expose described through hole 35.If owing to the top of this encapsulating structure is exposed, when electrical body contacts
During other positions at above-mentioned through hole 35 or top, influence whether the ruuning situation of this encapsulating structure place circuit.By metal frame
The inner side of the top of frame 30 and this through hole 35 is all encapsulated in epoxy resin body 34, can preferably protect above-mentioned electrical connection
Part, not by external influence, strengthens stability and the reliability of this encapsulating structure.
Wherein in an embodiment, the surface area of the pin that the first diode chip for backlight unit 10 attaches and described second diode
The difference of the surface area of the pin that chip 20 attaches is in preset range.By the surface area of the pin that the first diode chip for backlight unit 10 attaches
It is set to be equal or approximately equal with the surface area of the pin of described second diode chip for backlight unit 20 attaching so that two diode cores
The most uniformly, the dividing potential drop of the two is average, improves its Performance And Reliability in a particular application in the heat radiation of sheet.At the two point
On the basis of pressure is uniform, it is carried out circuit design, its dividing potential drop situation can be adjusted the most further.
Seeing Fig. 6, the first diode chip for backlight unit 10 is attached on the auxiliary pin 32 of metal framework 30, the second diode chip for backlight unit
20 are attached on the second pin 33 of metal framework 30, auxiliary pin 32 and the surface area approximately equal of the second pin 33；See
Fig. 7, the first diode chip for backlight unit 10 is attached on the auxiliary pin 32 of metal framework 30, and the second diode chip for backlight unit 20 is attached to metal
On first pin 31 of framework 30, auxiliary pin 32 and the surface area approximately equal of the first pin 31, for another encapsulation knot
Structure.The pin area approximation at two diode chip for backlight unit places is equal so that uniformly, dividing potential drop is impartial in two diode chip for backlight unit heat radiations,
Enhance its reliability in actual applications.
The encapsulating structure of above-mentioned series diode, is attached to the only of metal framework 30 by the same pole of two diode chip for backlight unit
On vertical pin, and another pole and each individual pin of the two diode chip for backlight unit are electrically connected, it is achieved two diode chip for backlight unit
Series connection, the same of the two diode chip for backlight unit can be extremely negative electrode, to the encapsulating structure that should have two kinds of series diodes.Additionally,
According to the demand of reality application, if desired strengthen the capacity of resisting disturbance of this encapsulating structure, the top of metal framework 30 can be sealed
It is contained in epoxy resin, only exposes the connection terminal of each pin front end；If desired the heat-sinking capability of this encapsulating structure is strengthened, permissible
By exposed outside for the top of this genus framework, same, to there being two kinds of encapsulating structures.So that two diode chip for backlight unit dissipate
The surface area of its metal pins each attached uniformly, can be designed as being equal or approximately equal, strengthen this encapsulating structure by heat
Reliability in actual use.The encapsulating structure of this series diode is simple, easy to process, can with automatic batch production,
Save cost.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that, come for those of ordinary skill in the art
Saying, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. the encapsulating structure of a series diode, it is characterised in that including: the first diode chip for backlight unit, the second diode chip for backlight unit
And metal framework, described metal framework includes that three pins independent of each other, the respectively first pin, the second pin and auxiliary draw
Foot, a pole of described first diode chip for backlight unit is attached on described auxiliary pin, and described second diode chip for backlight unit is opposite polarity
One pole electrically connects with described auxiliary pin, and the pole that described second diode chip for backlight unit polarity is identical is attached to described first and draws
On one of them pin of foot and the second pin, another pole of described first diode chip for backlight unit is drawn with described first pin and second
Another pin electrical connection in foot.
Encapsulating structure the most according to claim 1, it is characterised in that described first diode chip for backlight unit is attached to described auxiliary
On pin one extremely negative electrode.
Encapsulating structure the most according to claim 1, it is characterised in that the opposite polarity pole of described second diode chip for backlight unit
It is connected by electric wire with described auxiliary pin, another pole of described first diode chip for backlight unit and described first pin and the second pin
In another pin connected by electric wire.
Encapsulating structure the most according to claim 1, it is characterised in that described first pin, the second pin and described auxiliary
Pin is arranged side by side, and described first pin and the second pin are arranged on the both sides of described auxiliary pin.
Encapsulating structure the most according to claim 4, it is characterised in that described metal framework top is provided with for machinery even
The through hole connect.
Encapsulating structure the most according to claim 5, it is characterised in that described metal framework includes from top to bottom successively
Being mechanically connected district, chip region and pin area, described first diode chip for backlight unit, the second diode chip for backlight unit and described electric wire are arranged on institute
Stating chip region, described through hole is arranged on described mechanical connection district.
Encapsulating structure the most according to claim 6, it is characterised in that described chip region is encapsulated in the epoxy resin of insulation originally
Internal, expose described mechanical connection district and pin area.
Encapsulating structure the most according to claim 6, it is characterised in that described mechanical connection district and chip region are all encapsulated in absolutely
The epoxy resin of edge is the most internal, exposes described pin area and through hole.
Encapsulating structure the most according to claim 1, it is characterised in that the table of the pin that described first diode chip for backlight unit attaches
The difference of the surface area of the pin that area and described second diode chip for backlight unit attach is in preset range.
Encapsulating structure the most according to claim 3, it is characterised in that described electric wire is aluminum steel or copper cash.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610848725.5A CN106298725A (en) | 2016-09-23 | 2016-09-23 | The encapsulating structure of series diode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610848725.5A CN106298725A (en) | 2016-09-23 | 2016-09-23 | The encapsulating structure of series diode |
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| CN106298725A true CN106298725A (en) | 2017-01-04 |
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| CN201610848725.5A Pending CN106298725A (en) | 2016-09-23 | 2016-09-23 | The encapsulating structure of series diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107452704A (en) * | 2017-09-06 | 2017-12-08 | 深圳市矽莱克半导体有限公司 | The semiconductor device and its lead frame of Series Package |
| CN107464799A (en) * | 2017-09-21 | 2017-12-12 | 深圳市矽莱克半导体有限公司 | Single phase bridge type rectifier circu and three-phase bridge rectifier circuit |
| CN107546209A (en) * | 2017-09-28 | 2018-01-05 | 深圳市矽莱克半导体有限公司 | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package |
| CN107768365A (en) * | 2017-09-30 | 2018-03-06 | 深圳市矽莱克半导体有限公司 | The semiconductor device of two different component Series Packages |
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| JP2002261230A (en) * | 2001-02-28 | 2002-09-13 | Nippon Inter Electronics Corp | Fully molded semiconductor device and lead frame used for the same |
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| CN201523329U (en) * | 2009-11-02 | 2010-07-07 | 绍兴科盛电子有限公司 | Direct-plug type double diode small current rectification module |
| CN206179859U (en) * | 2016-09-23 | 2017-05-17 | 陈文彬 | Packaging structure of series connection diode |
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Effective date of registration: 20170816 Address after: 518000, A, building 611, south-east square International Plaza, Shek ha ha North Street, Futian District, Guangdong, Shenzhen Applicant after: Shenzhen silicon Lake Semiconductor Co., Ltd. Address before: 518000 Guangdong, Shenzhen, Futian District, No. 3013 Yitian Road, South Plaza, building A room, Room 302 Applicant before: Chen Wenbin Applicant before: Luo Xiaochun |
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Application publication date: 20170104 |