CN107546209A - The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package - Google Patents
The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package Download PDFInfo
- Publication number
- CN107546209A CN107546209A CN201710897811.XA CN201710897811A CN107546209A CN 107546209 A CN107546209 A CN 107546209A CN 201710897811 A CN201710897811 A CN 201710897811A CN 107546209 A CN107546209 A CN 107546209A
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- Prior art keywords
- chip
- island
- pin
- lead
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The present invention relates to a kind of silicon carbide substrates of Series Package and gallium nitride substrate semiconductor device, the lead frame of device is conductive material, the lead frame includes being used for the chip island for setting chip, the chip island includes the first island and the second island isolated with the first island, first island and the second island are respectively used for the chip for setting one carborundum/gallium nitride substrate, second island includes lead bonding pad, for being connected to the chip set on first island by lead, formed and be connected in series with the chip set with second island, the lead frame also includes second pin and the first pin being electrically connected with first island；One in first pin and second pin as the input after series connection, another is as the output end after connecting.Structure of the present invention is simpler, cost is lower, exploitativeness is high.
Description
Technical field
The present invention relates to semiconductor devices, more particularly to a kind of silicon carbide substrates semiconductor device of Series Package, goes back
It is related to a kind of gallium nitride substrate semiconductor device of Series Package.
Background technology
With the third generation semiconductor that carborundum (SiC) or gallium nitride (GaN) etc. are substrate, have compared to traditional silicon (Si) substrate
The advantages of broad stopband, as the reverse voltage endurance of SiC Schottky can be higher than Si about 10 times, and thermal conductivity is good, power density is high,
The leakage current loss of high temperature is extremely low, therefore the extensive Active PFC for applying to mains by harmonics, grid power are transmitted, high ferro is set
Apply, communicate, the high frequency such as charging pile for electric vehicle and inverter and high pressure use field.But at present because carborundum and gallium nitride serve as a contrast
The component at bottom is unable to reach certain high-tension technology restriction, and (the current ceiling voltage of such as carborundum is 1700V, gallium nitride
For hundreds of volts) so that its application is restricted.
The content of the invention
Based on this, it is necessary to provide a kind of silicon carbide substrates semiconductor device of Series Package and a kind of nitrogen of Series Package
Change gallium substrate semiconductor device.
A kind of silicon carbide substrates semiconductor device of Series Package, include the lead frame of conductive material, draw located at described
The first chip, the second chip on wire frame, and the insulation protection outer layer of covering first chip and the second chip, it is described
Lead frame includes being used for setting the chip island of chip, first chip and the second chip be the chip of silicon carbide substrates simultaneously
On the chip island, the positive opposite polarity with the back side of two chips；The chip island includes the first island and with the
Second island of one island isolation, first chip is on first island, and second chip is on second island；Institute
Stating lead frame includes second pin and the first pin being electrically connected with first island, first chip and the second chip
Contacted by identical face with the chip island, one side of second chip away from second island is electrically connected with by lead
To the second pin, second island includes lead bonding pad, and one side of first chip away from first island passes through
Lead is electrically connected to the lead bonding pad；The silicon carbide substrates semiconductor device also includes being electrically connected to described second
The voltage detecting point on island, the voltage detecting point is not by the insulation protection external sheath, first pin and second pin
In one as series connection after input, another as connect after output end.
In one of the embodiments, the one side that described two chips contact with the chip island is negative electrode, described
Two chips are that anode is electrically connected to the second pin by lead, and first chip is that anode is electrically connected with by lead
To second island.
In one of the embodiments, first chip and the second chip are Schottky diode chips.
In one of the embodiments, it is adjacent to be taken from the position on one piece of wafer for first chip and the second chip
Two chips.
In one of the embodiments, second island extends outward the insulation away from described second pin one end and protected
Exposed portion is formed outside shield outer layer, the voltage detecting point is in the exposed portion.
A kind of gallium nitride substrate semiconductor device of Series Package, include the lead frame of conductive material, draw located at described
The first chip, the second chip on wire frame, and the insulation protection outer layer of covering first chip and the second chip, it is described
Lead frame includes being used for setting the chip island of chip, first chip and the second chip be the chip of gallium nitride substrate simultaneously
On the chip island, the positive opposite polarity with the back side of two chips；The chip island includes the first island and with the
Second island of one island isolation, first chip is on first island, and second chip is on second island；Institute
Stating lead frame includes second pin and the first pin being electrically connected with first island, first chip and the second chip
Contacted by identical face with the chip island, one side of second chip away from second island is electrically connected with by lead
To the second pin, second island includes lead bonding pad, and one side of first chip away from first island passes through
Lead is electrically connected to the lead bonding pad；The gallium nitride substrate semiconductor device also includes being electrically connected to described second
The voltage detecting point on island, the voltage detecting point is not by the insulation protection external sheath, first pin and second pin
In one as series connection after input, another as connect after output end.
In one of the embodiments, the one side that described two chips contact with the chip island is negative electrode, described
Two chips are that anode is electrically connected to the second pin by lead, and first chip is that anode is electrically connected with by lead
To second island.
In one of the embodiments, first chip and the second chip are Schottky diode chips.
In one of the embodiments, it is adjacent to be taken from the position on one piece of wafer for first chip and the second chip
Two chips.
In one of the embodiments, second island extends outward the insulation away from described second pin one end and protected
Exposed portion is formed outside shield outer layer, the voltage detecting point is in the exposed portion.
The silicon carbide substrates and gallium nitride substrate semiconductor device of the Series Package of above-mentioned Series Package, without setting ceramics
Substrate, structure is simpler, cost is lower, exploitativeness is high.Because the direction of the first chip and the second chip is identical, therefore can be with
Using automation die bond equipment commonly used in the art, pick up two adjacent chips (Die) on one piece of wafer (Wafer) and be respectively placed in
It is packaged on first island and the second island, without special or extra die bond board, or carries out extra manual operation, equipment is thrown
Money cost is low, saves cost, and production efficiency and yields are high., can be with relative to directly by two packaged chip-in series
1/2 practice encapsulation individual is saved, terminal installation circuit board space and cost is saved, improves power density.
Brief description of the drawings
Fig. 1 is the structural representation of the silicon carbide substrates semiconductor device of Series Package in an embodiment；
Fig. 2 a, 2b, 2c are respectively that a kind of structure of traditional scheme by two integrated chips on a tandem arrangement is shown
It is intended to；
Fig. 3 is the equivalent circuit diagram of Fig. 1 in an embodiment；
Fig. 4 is that the connection of the lead frame and chip of the silicon carbide substrates semiconductor device of Series Package in an embodiment is closed
It is schematic diagram.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give the preferred embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.On the contrary, the purpose for providing these embodiments is made to the disclosure more thorough and comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all combination of the Listed Items of pass.
The chip of SiC/GaN substrates is applied to tandem high pressure power package by the present invention so that SiC/GaN breaks through easily to be worked as
Under chip production voltage limit technology limitation.Such as reversely maximum pressure-resistant specification is traditional SiC schottky diode
1700V, two SiC schottky diode chips of 1700V of connecting in an embodiment form silicon carbide substrates semiconductor devices
Afterwards, with regard to the reverse pressure-resistant high withstand voltage device for 3400V can be obtained.
Traditional can be in the following way on a tandem arrangement by two integrated chips：
1. referring to Fig. 2 a, the ceramic substrate that a printed circuit is covered on original copper lead frame prints out series connection
Circuit structure, and welding needs the chip connected thereon.Shortcoming be manufacturing cost is high, the chip that is welded on ceramic substrate because
Thermal diffusivity is poor and causes temperature high and causes two chip dynamic characteristics inconsistent, reduces reliability, and overall package cost
Higher, low production efficiency is, it is necessary to additionally increase the production equipment for attaching ceramic substrate.
2. referring to Fig. 2 b, the chip (N-Type and P-Type) in two kinds of electrical directions of difference of production when wafer is produced, one
Kind be anode upward, one kind be negative electrode upward, make it possible to general automatic die bond (Die-bond) and solidus (Wire-bond)
Mode produce.Its shortcoming be two series connection chips be derived from different wafers (one be derived from N-Type wafer, one take
From P-Type wafer), electrical characteristic uniformity can not ensure.And in encapsulation procedure, it is necessary to take on two different disks
Chip, the high equipment cost of die bond board；If with traditional die bond board, processing is needed twice, efficiency is low, cost is high.
3. referring to Fig. 2 c, with a half mechanical or manual reversion wherein chips, welding manner is used in a manner of a positive and a negative
Encapsulation, form cascaded structure.Shortcoming is artificial or half mechanical poor reliability, production efficiency is low and cost is high.
Fig. 1 is the structural representation of the silicon carbide substrates semiconductor device of Series Package in an embodiment.Series Package
Silicon carbide substrates semiconductor device includes the lead frame of conductive material (such as copper), in addition to first on lead frame
Chip 102, the second chip 104, and the insulation protection outer layer 40 of the first chip 102 of covering and the second chip 104.Lead frame
Including the chip island for setting chip, the first chip 102 and the second chip 104 are the chip of silicon carbide substrates and are located at
On chip island, the positive opposite polarity with the back side of two chips.In one embodiment, the front of chip is that p-type is partly led
Body, the anode as element, the back side are N-type semiconductors, the negative electrode as element.Can also be chip in other embodiments
Front is negative electrode, the back side is anode.
Include the first island 10 and the second island 20 isolated with the first island 10 referring to Fig. 4, chip island in the lump.First chip 102
On the first island 10, the second chip 104 is on the second island 20.Lead frame is electric including second pin 34 and with the first island 10
Property connection the first pin 32.First chip 102 and the second chip 104 (are that chip is carried on the back in the present embodiment by identical face
Face) contacted with chip island.One side (be in the present embodiment chip front side) of second chip 104 away from the second island 20 passes through lead
It is electrically connected to second pin 34.Second island 20 includes lead bonding pad, the first chip 102 away from the first island 10 one side (
It is chip front side in the present embodiment) lead bonding pad is electrically connected to by lead.In first pin 32 and second pin 34
One as the input of semiconductor device after two chip-in series, another is as the output end after series connection.In implementation shown in Fig. 1
In example, lead bonding pad is located at the second side of the chip 104 away from second pin 34；In other embodiments, lead bonding pad
It can also be located between the second chip and second pin 34.
It should be noted that Fig. 4 is to illustrate front, the back side and the lead of the first chip 102 and the second chip 104
The position relationship of framework and the schematic diagram of annexation, therefore the first pin 32 and the actual bearing of trend of second pin 34 and figure
It is different in 3, it should to be parallel with the first chip 102, the second chip 104 as in figure 1.
In the embodiment shown in fig. 1, the silicon carbide substrates semiconductor device of Series Package also includes being electrically connected to second
The voltage detecting point 22 on island 20, voltage detecting point 22 is not by insulation protection external sheath.The voltage detecting point of series connection partial pressure is set
22, can easily detection means work when two chip voltage distribution situations, it is ensured that the reliability of practice, avoid losing
Effect.
The silicon carbide substrates semiconductor device of above-mentioned Series Package, without setting ceramic substrate, relative to side shown in Fig. 2 a
Case structure is simpler, cost is lower, exploitativeness is high.Because the first chip 102 is identical with the direction of the second chip 104, therefore
Automation die bond equipment commonly used in the art can be used, picks up two adjacent chips (Die) difference on one piece of wafer (Wafer)
It is placed on the first island 10 and the second island 20 and is packaged, without special or extra die bond board, or carries out extra artificial behaviour
Make, equipment investment cost is low, saves cost, and production efficiency and yields are high.Relative to directly by two packaged chips
Series connection, 1/2 practice encapsulation individual can be saved, terminal installation circuit board space and cost is saved, improves power density.
In one embodiment, the first chip 102 and the second chip 104 are Schottky diode chips, corresponding equivalent
Circuit diagram is as shown in Figure 3.Voltage detecting point 22 is easy to detect the voltage's distribiuting after the first chip 102 and the series connection of the second chip 104
Situation, it is ensured that the reliability that is used in series, avoid failing.
In one embodiment, the first chip 102 and the second chip 104 are adjacent two in the position being derived from same wafer
Individual chip, therefore the uniformity of element is good, reliability is high.
In one embodiment, the material of insulation protection outer layer 40 is epoxy resins insulation plastics.
In the embodiment shown in fig. 1, the second island 20 extends outward insulation protection outer layer away from the one end of second pin 34
Exposed portion is formed outside 40, voltage detecting point 22 is in exposed portion.Exposed portion is further opened with locking hole 41, for for fastener
Semiconductor device is fixed on other objects by (such as screw) after passing through locking hole 41.In the embodiment shown in fig. 1, first
Island 10 also extends insulation protection outer layer 40 and forms exposed portion, sets exposed portion to be advantageous to the radiating to chip.
The present invention also provides a kind of gallium nitride substrate semiconductor device of Series Package.It should be understood that Series Package
Gallium nitride substrate semiconductor device can be by the silicon carbide substrates semiconductor device of the Series Package of any of the above-described embodiment by
One chip 102 and the second chip 104 obtain after replacing with the chip of gallium nitride substrate.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of silicon carbide substrates semiconductor device of Series Package, include the lead frame of conductive material, located at the lead
The first chip, the second chip on framework, and the insulation protection outer layer of covering first chip and the second chip, it is described to draw
Wire frame includes being used for the chip island for setting chip, and first chip and the second chip are the chip of silicon carbide substrates and set
In on the chip island, the opposite polarity of the fronts of two chips with the back side；Characterized in that,
The chip island includes the first island and the second island isolated with the first island, and first chip is located on first island,
Second chip is on second island；What the lead frame was electrically connected with including second pin and with first island
First pin, first chip and the second chip are contacted by identical face with the chip island, and second chip deviates from
The one side on second island is electrically connected to the second pin by lead, and second island includes lead bonding pad, described
One side of first chip away from first island is electrically connected to the lead bonding pad by lead；The silicon carbide substrates half
Conductor device also includes the voltage detecting point for being electrically connected to second island, and the voltage detecting point is not by the insulation protection
External sheath, one in first pin and second pin as the input after series connection, another as connecting after
Output end.
2. the silicon carbide substrates semiconductor device of Series Package according to claim 1, it is characterised in that described two cores
The one side that piece contacts with the chip island is negative electrode, and second chip is that anode is electrically connected to described second by lead
Pin, first chip are that anode is electrically connected to second island by lead.
3. the silicon carbide substrates semiconductor device of Series Package according to claim 1, it is characterised in that first core
Piece and the second chip are Schottky diode chips.
4. the silicon carbide substrates semiconductor device of Series Package according to claim 1, it is characterised in that first core
Piece and the second chip are taken from two adjacent chips of the position on one piece of wafer.
5. the silicon carbide substrates semiconductor device of Series Package according to claim 1, it is characterised in that second island
Extended outward away from described second pin one end and form exposed portion outside the insulation protection outer layer, the voltage detecting point is located at
In the exposed portion.
6. a kind of gallium nitride substrate semiconductor device of Series Package, include the lead frame of conductive material, located at the lead
The first chip, the second chip on framework, and the insulation protection outer layer of covering first chip and the second chip, it is described to draw
Wire frame includes being used for the chip island for setting chip, and first chip and the second chip are the chip of gallium nitride substrate and set
In on the chip island, the opposite polarity of the fronts of two chips with the back side；Characterized in that,
The chip island includes the first island and the second island isolated with the first island, and first chip is located on first island,
Second chip is on second island；What the lead frame was electrically connected with including second pin and with first island
First pin, first chip and the second chip are contacted by identical face with the chip island, and second chip deviates from
The one side on second island is electrically connected to the second pin by lead, and second island includes lead bonding pad, described
One side of first chip away from first island is electrically connected to the lead bonding pad by lead；The gallium nitride substrate half
Conductor device also includes the voltage detecting point for being electrically connected to second island, and the voltage detecting point is not by the insulation protection
External sheath, one in first pin and second pin as the input after series connection, another as connecting after
Output end.
7. the gallium nitride substrate semiconductor device of Series Package according to claim 6, it is characterised in that described two cores
The one side that piece contacts with the chip island is negative electrode, and second chip is that anode is electrically connected to described second by lead
Pin, first chip are that anode is electrically connected to second island by lead.
8. the gallium nitride substrate semiconductor device of Series Package according to claim 6, it is characterised in that first core
Piece and the second chip are Schottky diode chips.
9. the gallium nitride substrate semiconductor device of Series Package according to claim 6, it is characterised in that first core
Piece and the second chip are taken from two adjacent chips of the position on one piece of wafer.
10. the gallium nitride substrate semiconductor device of Series Package according to claim 6, it is characterised in that described second
Island is extended outward away from described second pin one end and forms exposed portion outside the insulation protection outer layer, and the voltage detecting point is set
In in the exposed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710897811.XA CN107546209A (en) | 2017-09-28 | 2017-09-28 | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710897811.XA CN107546209A (en) | 2017-09-28 | 2017-09-28 | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package |
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| CN107546209A true CN107546209A (en) | 2018-01-05 |
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| CN201710897811.XA Pending CN107546209A (en) | 2017-09-28 | 2017-09-28 | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071086A (en) * | 2018-01-24 | 2019-07-30 | 矽莱克电子股份有限公司 | Multiple concatenated fairings of diode chip for backlight unit |
| CN111211103A (en) * | 2020-01-15 | 2020-05-29 | 辽宁百思特达半导体科技有限公司 | Gallium nitride device, gallium nitride packaging structure and method |
| CN113465792A (en) * | 2021-06-17 | 2021-10-01 | 西安交通大学 | Silicon carbide pressure sensor chip with multilayer embossment and island film structure and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020168899A1 (en) * | 2001-05-11 | 2002-11-14 | Yoshifumi Matsumoto | Functional connector |
| CN106298725A (en) * | 2016-09-23 | 2017-01-04 | 陈文彬 | The encapsulating structure of series diode |
| CN207250502U (en) * | 2017-09-28 | 2018-04-17 | 深圳市矽莱克半导体有限公司 | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package |
-
2017
- 2017-09-28 CN CN201710897811.XA patent/CN107546209A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020168899A1 (en) * | 2001-05-11 | 2002-11-14 | Yoshifumi Matsumoto | Functional connector |
| CN106298725A (en) * | 2016-09-23 | 2017-01-04 | 陈文彬 | The encapsulating structure of series diode |
| CN207250502U (en) * | 2017-09-28 | 2018-04-17 | 深圳市矽莱克半导体有限公司 | The silicon carbide substrates and gallium nitride substrate semiconductor device of Series Package |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071086A (en) * | 2018-01-24 | 2019-07-30 | 矽莱克电子股份有限公司 | Multiple concatenated fairings of diode chip for backlight unit |
| CN111211103A (en) * | 2020-01-15 | 2020-05-29 | 辽宁百思特达半导体科技有限公司 | Gallium nitride device, gallium nitride packaging structure and method |
| CN113465792A (en) * | 2021-06-17 | 2021-10-01 | 西安交通大学 | Silicon carbide pressure sensor chip with multilayer embossment and island film structure and preparation method thereof |
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Application publication date: 20180105 |