CN201752014U - Super-high voltage semiconductor rectifier - Google Patents
Super-high voltage semiconductor rectifier Download PDFInfo
- Publication number
- CN201752014U CN201752014U CN2010202470475U CN201020247047U CN201752014U CN 201752014 U CN201752014 U CN 201752014U CN 2010202470475 U CN2010202470475 U CN 2010202470475U CN 201020247047 U CN201020247047 U CN 201020247047U CN 201752014 U CN201752014 U CN 201752014U
- Authority
- CN
- China
- Prior art keywords
- semiconductor rectifier
- super
- multilayer silicon
- high voltage
- voltage semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
The utility model discloses a super-high voltage semiconductor rectifier, comprising a multilayer silicon chip, two copper leads and an epoxy plastic packaging body, wherein the multilayer silicon chip is arranged between end surfaces of the copper leads and welded together with the copper leads through solder, the multilayer silicon chip between end surfaces of the copper leads and the solder layer is wrapped by silicone rubber, except the two ends of the copper leads, the entire super-high voltage semiconductor rectifier is wrapped in the epoxy plastic packaging body of injection molded epoxy resin. The super-high voltage semiconductor rectifier is advantageous in that one layer of the chip is designed as an instant recovery chip based on stitch welding structure of multilayer silicon chips of similar kind so that the counter-current recovery time of a product is reduced to less than 300ns. In addition to super-voltage resistance, the super-high voltage semiconductor rectifier also has the advantages of fast recovery, high efficiency and energy saving.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly a kind of superhigh pressure semiconductor rectifier.
Background technology
Plain edition superhigh pressure semiconductor rectifier diode, it is a kind of semiconductor rectifier device, is widely used in the facilities such as electric mosquito flap of consumer electronics such as various high frequency electric sources, automobile, sterilizer, computer monitor, anion generator and top grade.Classification does not wait its output current from 20 milliamperes to 1000 milliamperes, and reverse breakdown voltage has classifications such as 1000V, 2000V, 3000V, 4000V, 5000V according to chip specification difference.At present, the product reverse voltage can reach the standard of 4000V and 5000V, but its backward recovery time can not satisfy the fast requirement that recovers of client's product, the backward recovery time of like product is more than the 1000ns at present.
The utility model content
The utility model discloses a kind of superhigh pressure semiconductor rectifier, comprise multilayer silicon, two bronze medals lead-in wire, epoxy-plastic packaging body, the multilayer silicon is between two bronze medals lead-in wire end face, by scolder and copper wire bonds, silicon rubber is wrapped in multilayer silicon and the solder layer between two bronze medals lead-in wire end face wherein, and outside the whole superhigh pressure semiconductor rectifier copper removal lead-in wire two ends, remainder all is wrapped in the plastic-sealed body that epoxy resin is injection molded into.
Wherein, in the described multilayer silicon wherein one deck silicon be fast quick-recovery class chip.
The beneficial effects of the utility model are: on the structure of the multilayer silicon stitch welding of like product, wherein one deck chip is designed to recover soon the class chip by plain edition, the backward recovery time of product is reduced to below the 300ns, therefore the utility model not only has withstand voltage high characteristics, and have recovery time fast, efficient is high, characteristics such as energy-conservation.
Description of drawings
Fig. 1 is the utility model structure chart.
Embodiment
For the easier quilt of the utility model is understood, the utility model is done being described in more detail below in conjunction with the drawings and specific embodiments.
Consult Fig. 1, a kind of superhigh pressure semiconductor rectifier, comprise multilayer silicon 3, two bronze medals lead-in wire 2, epoxy-plastic packaging body 1, multilayer silicon 3 goes between between 2 end faces at two bronze medals, by scolder and 2 welding of copper lead-in wire, silicon rubber 5 is wrapped in multilayer silicon 3 and the solder layer 4 that two bronze medals go between between 2 end faces wherein, and whole superhigh pressure semiconductor rectifier copper removal goes between outside 2 terminations, remainder all is wrapped in the plastic-sealed body 1 that epoxy resin is injection molded into.The corresponding other end of the termination of copper lead-in wire 2 end face that be it weld with multilayer silicon 3.
Wherein, in the described multilayer silicon 3 wherein one deck silicon be fast quick-recovery class chip.
Claims (2)
1. superhigh pressure semiconductor rectifier, it is characterized in that: comprise multilayer silicon, two bronze medals lead-in wire, epoxy-plastic packaging body, the multilayer silicon is between two bronze medals lead-in wire end face, by scolder and copper wire bonds, silicon rubber is wrapped in multilayer silicon and the solder layer between two bronze medals lead-in wire end face wherein, and outside the whole superhigh pressure semiconductor rectifier copper removal lead-in wire two ends, remainder all is wrapped in the plastic-sealed body that epoxy resin is injection molded into.
2. according to the described a kind of superhigh pressure semiconductor rectifier of claim 1, it is characterized in that: in the described multilayer silicon wherein one deck silicon be fast quick-recovery class chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202470475U CN201752014U (en) | 2010-07-02 | 2010-07-02 | Super-high voltage semiconductor rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202470475U CN201752014U (en) | 2010-07-02 | 2010-07-02 | Super-high voltage semiconductor rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201752014U true CN201752014U (en) | 2011-02-23 |
Family
ID=43602424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202470475U Expired - Lifetime CN201752014U (en) | 2010-07-02 | 2010-07-02 | Super-high voltage semiconductor rectifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201752014U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987067A (en) * | 2020-07-30 | 2020-11-24 | 吉林华微电子股份有限公司 | Device lead assembly and semiconductor device |
| CN112289786A (en) * | 2020-10-22 | 2021-01-29 | 深圳市海弘建业科技有限公司 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
-
2010
- 2010-07-02 CN CN2010202470475U patent/CN201752014U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987067A (en) * | 2020-07-30 | 2020-11-24 | 吉林华微电子股份有限公司 | Device lead assembly and semiconductor device |
| CN112289786A (en) * | 2020-10-22 | 2021-01-29 | 深圳市海弘建业科技有限公司 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110223 |