CN2419687Y - Bidirectional silicon rectifier - Google Patents
Bidirectional silicon rectifier Download PDFInfo
- Publication number
- CN2419687Y CN2419687Y CN 00211116 CN00211116U CN2419687Y CN 2419687 Y CN2419687 Y CN 2419687Y CN 00211116 CN00211116 CN 00211116 CN 00211116 U CN00211116 U CN 00211116U CN 2419687 Y CN2419687 Y CN 2419687Y
- Authority
- CN
- China
- Prior art keywords
- silicon
- silicon stack
- group
- unidirectional
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The utility model relates to a semiconductor device, which is a silicon stack composed of a group of PN junction chips. The silicon stack is formed by two one-way PN junction chip silicon stacks which are reversely connected in parallel to be packaged, and the number of the PN junction chips of each group of one-way silicon stacks is 1-30. The silicon stack has the advantages of simple circuit structure, low fault rate, convenient maintenance, small volume of elements, little voltage position embedding fluctuation and high accuracy rate and is good for the stable operation of the circuit. The silicon stack can be welcomed by users.
Description
The utility model relates to semiconductor device, specifically a kind of silicon stack of being made up of the PN junction chip.
In electronic circuit, often occur clamped circuit structure is carried out in certain working point, the more general practice is to utilize the forward voltage drop characteristic of diode to realize.The need that have adopt many diodes to be concatenated into diode chain by positive and negative form, then again two groups of diode chain of having gone here and there are carried out inverse parallel, form the diode chain group.Carrying out certain point voltage in the circuit is carried out clamped with this chain group, they be on volume or in the use all inconvenient, and its element is many, complex structure, and failure rate also can increase, and maintenance is also inconvenient.
The purpose of this utility model is the shortcoming at above-mentioned existence, provides a kind of simple in structure, and is easy to use and be used for the clamped Bidirectional silicon rectifier of alternating voltage.
Technical essential of the present utility model is: the silicon stack inverse parallel encapsulation that it is made up of two groups of unidirectional PN junction chips constitutes, and the PH knot number of chips of every group of unidirectional silicon stack is 1～30.The quantity of every group of unidirectional silicon stack PN junction chip is equal to, and also can be incoordinate, can make the normalized form of various needs according to required clamped voltage difference.The shape of every group of unidirectional silicon stack can be rectangle, square or cylinder.
Appearance of the present utility model not only can be accomplished the simple in structure of circuit, and failure rate reduces, and is easy to maintenance, and the volume of its element is little, and the clamped fluctuation of voltage is few, and the accuracy rate height helps the working stability of circuit, is bound to be subjected to the user and welcomes.
Description of drawings:
Fig. 1 is one of an embodiment of the present utility model structural representation.
Fig. 2 is two structural representations of embodiment of the present utility model.
Fig. 3 is three structural representations of embodiment of the present utility model.
Fig. 4 is a perspective view of the present utility model.
From accompanying drawing as seen, the utility model adopts the silicon stack (1,2) of two groups of unidirectional PN junction chip sintering to be provided with abreast and is packaged in the insulating material (5), and its termination lead-in wire (3,4) is for axially drawing (see figure 1); Also its termination lead-in wire (3,4) radially can be drawn (see figure 2) or mounted and draw (see figure 3); Used insulation-encapsulated material is resin or plastics.
Packaging appearance of the present utility model is square, cylindrical or spherical.
Claims (4)
1. a Bidirectional silicon rectifier has the PN junction chip, it is characterized in that: it is to be made of two groups of unidirectional PN junction chip silicon stack inverse parallel encapsulation, and the PH knot number of chips of every group of unidirectional silicon stack is 1～30.
2. according to the described Bidirectional silicon rectifier of claim 1, it is characterized in that: the number of laminations of every group of PH knot chip is equal to, and also can be incoordinate; The shape of every group of unidirectional silicon stack can be rectangle, square or cylinder.
3. according to the described Bidirectional silicon rectifier of claim 1, it is characterized in that: the silicon stack (1,2) that adopts two groups of unidirectional PH to tie the chip sintering is provided with abreast and is packaged in the insulating material (5), and its termination lead-in wire (3,4) is for axially drawing; Also its termination lead-in wire (3,4) radially can be drawn or mounted and draw.
4. according to the described Bidirectional silicon rectifier of claim 1, it is characterized in that: packaging appearance is square, cylindrical or spherical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00211116 CN2419687Y (en) | 2000-03-15 | 2000-03-15 | Bidirectional silicon rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00211116 CN2419687Y (en) | 2000-03-15 | 2000-03-15 | Bidirectional silicon rectifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2419687Y true CN2419687Y (en) | 2001-02-14 |
Family
ID=33577869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00211116 Expired - Fee Related CN2419687Y (en) | 2000-03-15 | 2000-03-15 | Bidirectional silicon rectifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2419687Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488644B (en) * | 2009-02-13 | 2011-11-09 | 江苏雷宇高电压设备有限公司 | Automatic polarity switching oil immersion silicon stack |
| CN110379806A (en) * | 2019-07-17 | 2019-10-25 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of bi-directional ESD diode and preparation method thereof |
-
2000
- 2000-03-15 CN CN 00211116 patent/CN2419687Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101488644B (en) * | 2009-02-13 | 2011-11-09 | 江苏雷宇高电压设备有限公司 | Automatic polarity switching oil immersion silicon stack |
| CN110379806A (en) * | 2019-07-17 | 2019-10-25 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of bi-directional ESD diode and preparation method thereof |
| CN110379806B (en) * | 2019-07-17 | 2024-04-16 | 中国振华集团永光电子有限公司（国营第八七三厂） | Bidirectional ESD diode and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |