CN202058728U - Chip combination type semiconductor integrated device - Google Patents
Chip combination type semiconductor integrated device Download PDFInfo
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- CN202058728U CN202058728U CN2011201385446U CN201120138544U CN202058728U CN 202058728 U CN202058728 U CN 202058728U CN 2011201385446 U CN2011201385446 U CN 2011201385446U CN 201120138544 U CN201120138544 U CN 201120138544U CN 202058728 U CN202058728 U CN 202058728U
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- type semiconductor
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Abstract
Provided is a chip combination type semiconductor integrated device, comprising a plastic-sealed body (1) and a plurality of pins (2); the framework in the plastic-sealed body (1) is hermetically provided with at least two same or different semiconductor device chips. The chip combination type semiconductor integrated device has a unique design and novel structure; compared with the manufacture process technology of existing common semiconductor devices, the chip combination type semiconductor integrated device has good inheritance and compatibility and is independent from a semiconductor discrete device and an integrated circuit, and fills the blank of semiconductor devices. The chip combination type semiconductor integrated device possesses the advantages of a short exploitation period, low disposable investment, flexible combination, convenient use, strong security, good market adaptability, large demand, etc., thus has wide technical market prospect.
Description
Technical field
The utility model relates to a kind of semiconductor device, particularly, relates to a kind of chip portfolio N-type semiconductor N integrated device.
Background technology
The world today, the development of electronics new technology is maked rapid progress, and the electronic application product of various novelties emerges in an endless stream.These electronics new technologies, new product bring great convenience to daily life, have improved people's quality of the life greatly.
But the general semiconductor device mainly is an encapsulation semiconductor device chip (referring to shown in Figure 1) on the framework in plastic-sealed body, and its effect is limited to very much.Specific if desired function, for example constant-current driving, postpone function such as driving, then need to realize by integrated circuit, but since the Development and Production of semiconductor integrated circuit have the construction cycle longly, disposable have high input, to characteristics such as market demands harshnesses, cause the research and development of semiconductor integrated circuit to produce the needs to satisfy the develop rapidly of electronic application product far away, so people have to adopt following method: existing semi-conductor discrete device and integrated circuit to be welded on to be combined into the requirement that element circuit satisfies the electronic application product in the PCB printed board.
Though this kind method has advantages such as the development time is short, easy to use, also obviously exist cost height, reliability low (pad is many), be not easy to shortcomings such as lightening, miniaturization and automation.
Because the above-mentioned shortcoming of prior art needs a kind of novel chip portfolio N-type semiconductor N integrated device.
The utility model content
The purpose of this utility model provides a kind of chip portfolio N-type semiconductor N integrated device, to overcome the above-mentioned defective of prior art, this chip portfolio N-type semiconductor N integrated device can be realized required function as required, and has lightening, miniaturization, advantage that reliability is high.
Above-mentioned purpose is achieved through the following technical solutions: chip portfolio N-type semiconductor N integrated device, this chip portfolio N-type semiconductor N integrated device comprises a plastic-sealed body and a plurality of pin, is packaged with at least two identical or different semiconductor device chips on the framework in this plastic-sealed body.
Selectively, described at least two different semiconductor device chips are a controlled silicon chip and a triode chip.
Selectively, described at least two different semiconductor device chips are a controlled silicon chip and a voltage-stabiliser tube chip.
Selectively, described at least two different semiconductor device chips are a voltage-stabiliser tube chip and a triode chip.
Selectively, described at least two identical semiconductor device chips are two triode chips.
Selectively, described at least two different semiconductor device chips are a standard of precision voltage chip and a triode chip.
Selectively, described at least two identical semiconductor device chips are four or five diode chip for backlight unit.
Pass through technique scheme, unique, the novel structure of the utility model design, itself and existing general semiconductor device fabrication technology and equipment have good inheritance, compatibility, and it is independent of outside semi-conductor discrete device and the integrated circuit, has filled up a blank of semiconductor device.The utility model also has short, characteristics such as disposable input is little, the combination is flexible, easy to use, strong security, market adaptability is good, demand is big of construction cycle, and its technical market prospect is very wide.
Description of drawings
Fig. 1 is the schematic diagram of ordinary semiconductor device chip encapsulation, and wherein plastic-sealed body shows by a dotted line.
Fig. 2 to Fig. 4 shows the schematic diagram that is packaged with two or more semiconductor device chips on the framework in the plastic-sealed body respectively, only schematically illustrates the relative position of Chip Packaging among the figure, and does not show stereochemical structure.
Among the figure: 1 plastic-sealed body; 2 pins.
Embodiment
The embodiment of the utility model chip portfolio N-type semiconductor N integrated device is described below in conjunction with accompanying drawing.
At first set forth the basic technical scheme of the utility model chip portfolio N-type semiconductor N integrated device: referring to Fig. 1 to Fig. 4, chip portfolio N-type semiconductor N integrated device of the present utility model comprises a plastic-sealed body 1 (including framework), is packaged with at least two identical or different semiconductor device chips on the framework in this plastic-sealed body 1.That is to say, general semiconductor device fabrication equipment, the technology of the comparative maturity that chip portfolio N-type semiconductor N integrated device of the present utility model utilization is at present general, a plurality of general semiconductor discrete device (or integrated circuit) chipsets merging with identical or different purposes are encapsulated in the multitube pin semiconductor device package (being plastic-sealed body), make a semiconductor integrated device with different purposes.
Referring to shown in Figure 2, this chip portfolio N-type semiconductor N integrated device embodiment illustrated in fig. 2 is packaged with a controlled silicon chip and a triode chip, annexation between its chips, between chip and the pin 2 is known those skilled in the art, and it mainly can realize the function of turn on delay.Referring to shown in Figure 3, this chip portfolio N-type semiconductor N integrated device embodiment illustrated in fig. 3 is packaged with a standard of precision voltage chip and a triode chip, and it mainly realizes the constant current function by integrated encapsulation.As shown in Figure 4, this chip portfolio N-type semiconductor N integrated device embodiment illustrated in fig. 4 is packaged with five diode chip for backlight unit, and it is mainly used in the quick rectification sampled functions that realizes ac small signal.
Certainly, above-mentioned with reference to Fig. 2 to shown in Figure 4 only be for setting forth the embodiment that the utility model exemplifies, chip portfolio N-type semiconductor N integrated device of the present utility model is not limited to above-mentioned form, for example, described chip portfolio N-type semiconductor N integrated device can also encapsulate a controlled silicon chip and a voltage-stabiliser tube chip; Perhaps encapsulate a voltage-stabiliser tube chip and a triode chip; Perhaps encapsulate two triode chips; Perhaps encapsulate four or five diode chip for backlight unit.In fact, be the function that needing to realize, those skilled in the art can encapsulate similar and different chip as requested in an encapsulation, and are not limited to the type or the quantity of chip shown in the accompanying drawing.
From the principle of the integrated encapsulation of semiconductor, typically have following three kinds of encapsulated types.
The first, chip portfolio N-type semiconductor N integrated device of the present utility model forms the integrated constant current device of semiconductor (being the current stabilization device).For example, common triode (or field effect transistor) chip that has voltage stabilizing didoe (or triode) chip of voltage reference function and have an enlarging function can be bonded in each bonding die district of many leaded semiconductors device framework respectively, again said chip and pin are used the metal lead wire soldering group altogether, make semiconductor integrated device after the encapsulation, be used for constant-current driving not high LED lamp bar of constant current performance requirement etc. with perseverance (surely) stream function.For another example, standard of precision voltage chip and common triode (or field effect transistor) chip with enlarging function can also be bonded in each bonding die district of many leaded semiconductors device framework respectively, again said chip and pin are used the metal lead wire soldering group altogether, make semiconductor integrated device after the encapsulation, be used for constant-current driving higher transducer of constant current performance requirement and LED illuminating lamp etc. with accurate permanent (surely) stream function.
Second; chip portfolio N-type semiconductor N integrated device of the present utility model forms the integrated constant-voltage device of semiconductor (being voltage-stabilizing device); particularly; standard of precision voltage chip and common triode (or field effect transistor) chip with enlarging function can be bonded in each bonding die district of many leaded semiconductors device framework respectively; again said chip and pin are used the metal lead wire soldering group altogether; make semiconductor integrated device after the encapsulation with accurate permanent (surely) compression functions; be used for the additives for overcharge protection of storage battery group monocell etc., also can be used as the high-accuracy heavy-current voltage-stabiliser tube.
The 3rd, chip portfolio N-type semiconductor N integrated device of the present utility model forms the integrated silicon-controlled device of semiconductor.Particularly, can voltage stabilizing didoe (or two, triode) chip and single, double each bonding die district that is bonded in many leaded semiconductors device framework to controlled silicon chip respectively of voltage reference function will be had, again said chip and pin are used the metal lead wire soldering group altogether, make the integrated silicon-controlled device of semiconductor after the encapsulation, be used for the delay start and driving that exchanges piezoelectric buzzer etc. of alternating current large-power electrical equipment with turn on delay (voltage) characteristic.
Unique, the novel structure of chip portfolio N-type semiconductor N integrated device design of the present utility model, itself and existing general semiconductor device fabrication technology and equipment have good inheritance, compatibility, it is independent of outside semi-conductor discrete device and the integrated circuit, has filled up a blank of semiconductor device.The utility model also has short, characteristics such as disposable input is little, the combination is flexible, easy to use, strong security, market adaptability is good, demand is big of construction cycle, and its technical market prospect is very wide.
Each concrete technical characterictic described in above-mentioned embodiment can carry out combination in any by any suitable manner, and it falls within the scope disclosed in the utility model equally.Simultaneously, also can carry out combination in any between the various execution mode of the present utility model, as long as it is without prejudice to thought of the present utility model, it should be considered as content disclosed in the utility model equally.In addition; the utility model is not limited to the detail in the above-mentioned execution mode; in technical conceive scope of the present utility model, can carry out multiple simple variant to the technical solution of the utility model, these simple variant all belong to protection range of the present utility model.Protection range of the present utility model is defined by the claims.
Claims (7)
1. chip portfolio N-type semiconductor N integrated device, this chip portfolio N-type semiconductor N integrated device comprises a plastic-sealed body (1) and a plurality of pin (2), it is characterized in that, is packaged with at least two identical or different semiconductor device chips on the framework in this plastic-sealed body (1).
2. chip portfolio N-type semiconductor N integrated device according to claim 1 is characterized in that, described at least two different semiconductor device chips are a controlled silicon chip and a triode chip.
3. chip portfolio N-type semiconductor N integrated device according to claim 1 is characterized in that, described at least two different semiconductor device chips are a controlled silicon chip and a voltage-stabiliser tube chip.
4. chip portfolio N-type semiconductor N integrated device according to claim 1 is characterized in that, described at least two different semiconductor device chips are a voltage-stabiliser tube chip and a triode chip.
5. chip portfolio N-type semiconductor N integrated device according to claim 1 is characterized in that, described at least two identical semiconductor device chips are two triode chips.
6. chip portfolio N-type semiconductor N integrated device according to claim 1 is characterized in that, described at least two different semiconductor device chips are a standard of precision voltage chip and a triode chip.
7. chip portfolio N-type semiconductor N integrated device according to claim 1 is characterized in that, described at least two identical semiconductor device chips are four or five diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201385446U CN202058728U (en) | 2011-05-05 | 2011-05-05 | Chip combination type semiconductor integrated device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201385446U CN202058728U (en) | 2011-05-05 | 2011-05-05 | Chip combination type semiconductor integrated device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202058728U true CN202058728U (en) | 2011-11-30 |
Family
ID=45018694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201385446U Expired - Fee Related CN202058728U (en) | 2011-05-05 | 2011-05-05 | Chip combination type semiconductor integrated device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202058728U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549007A (en) * | 2015-09-16 | 2017-03-29 | 无锡华润华晶微电子有限公司 | Power IC, lead frame, the packaging body of Power IC and light fixture |
-
2011
- 2011-05-05 CN CN2011201385446U patent/CN202058728U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549007A (en) * | 2015-09-16 | 2017-03-29 | 无锡华润华晶微电子有限公司 | Power IC, lead frame, the packaging body of Power IC and light fixture |
| CN106549007B (en) * | 2015-09-16 | 2019-06-07 | 无锡华润华晶微电子有限公司 | Power IC, lead frame, Power IC packaging body and lamps and lanterns |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111130 Termination date: 20150505 |
|
| EXPY | Termination of patent right or utility model |