CN102082140A - Bilateral high-voltage transient voltage suppressor (TVS) - Google Patents
Bilateral high-voltage transient voltage suppressor (TVS) Download PDFInfo
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- CN102082140A CN102082140A CN2010105965351A CN201010596535A CN102082140A CN 102082140 A CN102082140 A CN 102082140A CN 2010105965351 A CN2010105965351 A CN 2010105965351A CN 201010596535 A CN201010596535 A CN 201010596535A CN 102082140 A CN102082140 A CN 102082140A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention provides a bilateral high-voltage transient voltage suppressor (TVS) which comprises a diode die, solder pieces, leads, rubber coating layers and a plastic package body, wherein lead heads of the leads are connected with the solder pieces at one end of the diode die; the rubber coating layers are arranged on the periphery of the diode die; the plastic package body is arranged on the peripheries of the lead heads and the rubber coating layers; the diode die comprises two diode chip groups; the first diode chip group comprises n TVS chips and the solder pieces; the n chips are sorted according to polarity in the same direction and are connected by the solder pieces; the second diode chip group comprises m TVS chips; the m TVS chips are sorted according to polarity in the same direction and are connected by the solder pieces; the polarity directions of the n TVS chips of the first diode chip group are opposite to the those of the m TVS chips of the second diode chip group; the first diode chip group is connected with the second diode chip group by the solder pieces; and n and m are positive integers greater than 1. The TVS has simple process, low manufacturing cost and easy-to-control electrical parameters and can suppress higher punch through voltage.
Description
Technical field
The invention belongs to field of semiconductor devices, particularly a kind of structure of bidirectional high-pressure Transient Suppression Diode.
Background technology
Two-way Transient Suppression Diode generally is used for protective circuit, and its function is that it can absorb surge current, suppresses voltage punch-through transient, protects load fast.Along with the development of solar energy generation technology, the power transmission and transformation technology of high-power high voltage solar power station requires more and more higher, for example anti-lightning strike to the inhibition of transient high voltages, and antioverloading etc. need a kind of transient suppression device of two-way high-breakdown-voltage in a hurry.The information that provides according to the domestic and foreign literature data, what the manufacture method of traditional two-way Transient Suppression Diode adopted all is chemical methodes that mix in the subregion in semi-conducting material, technology is very complicated, the manufacturing cost height, the electrical quantity of product is difficult to control during production, particularly because of the limitation of this manufacture method, the maximum clamp voltage of the two-way Transient Suppression Diode that provides in the market is about 500-600V, the two-way Transient Suppression Diode of the higher punch through voltage of inhibition can not be provided, can't satisfy the demand of solar energy generation technology.
Summary of the invention
The object of the present invention is to provide a kind of technology simple, low cost of manufacture, electrical quantity is easy to control and can suppress the two-way Transient Suppression Diode of higher punch through voltage.
In order to achieve the above object, technical scheme of the present invention is,
OnePlant the bidirectional high-pressure Transient Suppression Diode, comprise diode chip, weld tabs, lead-in wire, encapsulate layer and plastic-sealed body, the lead riser inner face of lead-in wire is connected with the weld tabs of diode chip one end, and the periphery of diode chip is provided with the encapsulate layer, and the periphery of lead riser and encapsulate layer has plastic-sealed body; And
A, diode chip comprise first group of diode chip for backlight unit group and second group of diode chip for backlight unit group;
B, first group of diode chip for backlight unit group comprise n sheet Transient Suppression Diode chip and weld tabs, and this n sheet Transient Suppression Diode chip is pressed polarity sequence arrangement in the same way, and are connected by weld tabs;
C, second group of diode chip for backlight unit group comprise m sheet Transient Suppression Diode chip, and this m sheet Transient Suppression Diode chip is pressed polarity sequence arrangement in the same way, and are connected by weld tabs;
The opposite polarity directions of the polarity of the n sheet Transient Suppression Diode chip of d, first group of diode chip for backlight unit group and the m sheet Transient Suppression Diode chip of second group of diode chip for backlight unit group, and connect by weld tabs between first group of diode chip for backlight unit group and second group of diode chip for backlight unit group;
E, wherein n and m are the positive integer greater than 1.
The n sheet Transient Suppression Diode chip of described first group of diode chip for backlight unit group equates with the number of the m sheet Transient Suppression Diode chip of second group of diode chip for backlight unit group, also is that n equals m.
Described plastic-sealed body is a cylinder, or is square cylinder, and described encapsulate layer is the silica gel encapsulate, and plastic-sealed body is the epoxy resin plastic packaging.
Described first group of diode chip for backlight unit group comprises 2 Transient Suppression Diode chips, and second group of diode chip for backlight unit group also comprises 2 Transient Suppression Diode chips.
The present invention compared with prior art has the following advantages: the manufacture method of two-way Transient Suppression Diode tube core is that the Transient Suppression Diode chip is divided into two groups, first group of interior n sheet Transient Suppression Diode chip of diode chip for backlight unit group pressed polarity sequence arrangement in the same way, and connect by weld tabs, second group of interior m sheet Transient Suppression Diode chip of diode chip for backlight unit group pressed polarity sequence arrangement in the same way, and connect by weld tabs, with the opposite polarity directions of the m sheet Transient Suppression Diode chip of the polarity of the n sheet Transient Suppression Diode chip of first group of diode chip for backlight unit group and second group of diode chip for backlight unit group, connect by weld tabs more then; Basic technological process and the manufacturing technology that adopts conventional diode, factory need not to increase new production equipment, just can put into production, technology is simple, low cost of manufacture, be the characteristic of two-way inhibition because of this diode chip for backlight unit has changed the unidirectional inhibition of former diode again, and the individual number average of the two groups of chip of stack is greater than 1, improved the withstand voltage properties of material again, electrical quantity also is easy to control, in addition, by the more stack of multicore sheet, can increase the ability that improves two-way clamp voltage according to user's request, can suppress higher punch through voltage, further satisfy the demand of solar energy generation technology.
Description of drawings
Fig. 1 is the structure cross-sectional schematic of the embodiment of the invention 1;
Fig. 2 is the structure cross-sectional schematic of the embodiment of the invention 2;
Fig. 3 is the structure cross-sectional schematic of the embodiment of the invention 3;
Fig. 4 is the structure cross-sectional schematic of the embodiment of the invention 4.
Embodiment
The embodiment that provides below in conjunction with accompanying drawing does explanation in further detail to the present invention.
Embodiment 1:
As shown in Figure 1:
OnePlant the bidirectional high-pressure Transient Suppression Diode, comprise diode chip 1, weld tabs 2, lead-in wire 3, encapsulate layer 4 and plastic-sealed body 5, the lead riser 3-1 inner face of lead-in wire 3 is connected with the weld tabs 2 of diode chip 1 one ends, the periphery of diode chip 1 is provided with encapsulate layer 4, and the periphery of lead riser 3-1 and encapsulate layer 4 has plastic-sealed body 5; Diode chip 1 comprises first group of diode chip for backlight unit group 1-1 and second group of diode chip for backlight unit group 1-2; First group of diode chip for backlight unit group 1-1 comprise n sheet Transient Suppression Diode chip 1-1-1,1-1-2 ... 1-1-n and weld tabs 2, this n sheet Transient Suppression Diode chip 1-1-1,1-1-2 ... 1-1-n presses P-N polarity sequence arrangement in the same way, and is connected by weld tabs 2; Second group of diode chip for backlight unit group 1-2 comprise m sheet Transient Suppression Diode chip 1-2-1,1-2-2 ... 1-2-m, this m sheet Transient Suppression Diode chip 1-2-1,1-2-2 ... 1-2-m also presses P-N polarity sequence arrangement in the same way, and is connected by weld tabs 2; The N polar end of the n sheet Transient Suppression Diode chip 1-1-n of first group of diode chip for backlight unit group 1-1 is connected by weld tabs 2 with the N polar end of the m sheet Transient Suppression Diode chip 1-2-m of second group of diode chip for backlight unit group 1-2, wherein n equals m, and n and m are the positive integer greater than 1.
Described plastic-sealed body 4 is a cylinder, or is square cylinder, and described encapsulate layer 3 is the silica gel encapsulate, and plastic-sealed body 4 is the epoxy resin plastic packaging.
Embodiment 2:
As shown in Figure 2,
OnePlant the bidirectional high-pressure Transient Suppression Diode, comprise diode chip 1, weld tabs 2, lead-in wire 3, encapsulate layer 4 and plastic-sealed body 5, the lead riser 3-1 inner face of lead-in wire 3 is connected with the weld tabs 2 of diode chip 1 one ends, the periphery of diode chip 1 is provided with encapsulate layer 4, and the periphery of lead riser 3-1 and encapsulate layer 4 has plastic-sealed body 5; Diode chip 1 comprises first group of diode chip for backlight unit group 1-1 and second group of diode chip for backlight unit group 1-2; First group of diode chip for backlight unit group 1-1 comprise n sheet Transient Suppression Diode chip 1-1-1,1-1-2 ... 1-1-n and weld tabs 2, this n sheet Transient Suppression Diode chip 1-1-1,1-1-2 ... 1-1-n presses N-P polarity sequence arrangement in the same way, and is connected by weld tabs 2; Second group of diode chip for backlight unit group 1-2 comprise m sheet Transient Suppression Diode chip 1-2-1,1-2-2 ... 1-2-m, this m sheet Transient Suppression Diode chip 1-2-1,1-2-2 ... 1-2-m also presses N-P polarity sequence arrangement in the same way, and is connected by weld tabs 2; The P polar end of the n sheet Transient Suppression Diode chip 1-1-n of first group of diode chip for backlight unit group 1-1 is connected by weld tabs 2 with the P polar end of the m sheet Transient Suppression Diode chip 1-2-m of second group of diode chip for backlight unit group 1-2; Wherein n equals m, and n and m are the positive integer greater than 1.
Described plastic-sealed body 4 is a cylinder, or is square cylinder, and described encapsulate layer 3 is the silica gel encapsulate, and plastic-sealed body 4 is the epoxy resin plastic packaging.
Embodiment 3:
As shown in Figure 3,
OnePlant the bidirectional high-pressure Transient Suppression Diode, wherein first group of diode chip for backlight unit group 1-1 comprises 2 Transient Suppression Diode chip 1-1-1,1-1-2 and weld tabs 2, these 2 Transient Suppression Diode chip 1-1-1,1-1-2 press N-P polarity sequence arrangement in the same way, and are connected by weld tabs 2; Second group of diode chip for backlight unit group 1-2 comprises 2 Transient Suppression Diode chip 1-2-1,1-2-2, and these 2 Transient Suppression Diode chip 1-2-1,1-2-2 also press N-P polarity sequence arrangement in the same way, and connected by weld tabs 2; The N polar end of the 2nd Transient Suppression Diode chip 1-1-2 of first group of diode chip for backlight unit group 1-1 is connected by weld tabs 2 with the N polar end of the 2nd Transient Suppression Diode chip 1-2-2 of second group of diode chip for backlight unit group 1-2.
Embodiment 4:
As shown in Figure 4,
OnePlant the bidirectional high-pressure Transient Suppression Diode, wherein first group of diode chip for backlight unit group 1-1 comprises 2 Transient Suppression Diode chip 1-1-1,1-1-2 and weld tabs 2, these 2 Transient Suppression Diode chip 1-1-1,1-1-2 press P-N polarity sequence arrangement in the same way, and are connected by weld tabs 2; Second group of diode chip for backlight unit group 1-2 comprises 2 Transient Suppression Diode chip 1-2-1,1-2-2, and these 2 Transient Suppression Diode chip 1-2-1,1-2-2 also press P-N polarity sequence arrangement in the same way, and connected by weld tabs 2; The P polar end of the 2nd Transient Suppression Diode chip 1-1-2 of first group of diode chip for backlight unit group 1-1 is connected by weld tabs 2 with the P polar end of the 2nd Transient Suppression Diode chip 1-2-2 of second group of diode chip for backlight unit group 1-2.
More than the bidirectional high-pressure Transient Suppression Diode of four embodiment, its manufacture method is slightly different with the manufacture method of conventional diode, master operation is that the first step sorts Transient Suppression Diode chip, weld tabs and lead-in wire by polar orientation elder generation forward, then sorting by reversals; Welded after second step, Transient Suppression Diode chip, weld tabs and the lead-in wire after will sort shelved, pickling, barbecue and gluing, the formation diode chip; The 3rd step with silica gel and epoxy resin cure encapsulation, was made the diode pipe with diode chip; Classification, lettering and baking were electroplated, detected to the 4th step to the diode pipe, forms finished product, then the packing warehouse-in.
The bidirectional high-pressure Transient Suppression Diode that the present invention at present makes, every unit for electrical property parameters meets China's Transient Suppression Diode standard-required, and the detection data of sample are as shown in the table in batches:
Claims (4)
1.
OnePlant the bidirectional high-pressure Transient Suppression Diode, comprise diode chip (1), weld tabs (2), lead-in wire (3), encapsulate layer (4) and plastic-sealed body (5), lead riser (3-1) inner face of lead-in wire (3) is connected with the weld tabs (2) of diode chip (1) one end, the periphery of diode chip (1) is provided with encapsulate layer (4), and the periphery of lead riser (3-1) and encapsulate layer (4) has plastic-sealed body (5); It is characterized in that:
A, diode chip (1) comprise first group of diode chip for backlight unit group (1-1) and second group of diode chip for backlight unit group (1-2);
B, first group of diode chip for backlight unit group (1-1) comprise n sheet Transient Suppression Diode chip (1-1-1,1-1-2 ... 1-1-n) and weld tabs (2), this n sheet Transient Suppression Diode chip (1-1-1,1-1-2 ... 1-1-n) press polarity sequence arrangement in the same way, and connect by weld tabs (2);
C, second group of diode chip for backlight unit group (1-2) comprise m sheet Transient Suppression Diode chip (1-2-1,1-2-2 ... 1-2-m), this m sheet Transient Suppression Diode chip (1-2-1,1-2-2 ... 1-2-m) press polarity sequence arrangement in the same way, and connect by weld tabs (2);
The n sheet Transient Suppression Diode chip of d, first group of diode chip for backlight unit group (1-1) (1-1-1,1-1-2 ... the m sheet Transient Suppression Diode chip of polarity 1-1-n) and second group of diode chip for backlight unit group (1-2) (1-2-1,1-2-2 ... opposite polarity directions 1-2-m), and connect by weld tabs (2) between first group of diode chip for backlight unit group (1-1) and the second group of diode chip for backlight unit group (1-2);
E, wherein n and m are the positive integer greater than 1.
2. bidirectional high-pressure Transient Suppression Diode according to claim 1, it is characterized in that: the n sheet Transient Suppression Diode chip of described first group of diode chip for backlight unit group (1-1) (1-1-1,1-1-2 ... 1-1-n) with the m sheet Transient Suppression Diode chip of second group of diode chip for backlight unit group (1-2) (1-2-1,1-2-2 ... number 1-2-m) equates, also is that n equals m.
3. bidirectional high-pressure Transient Suppression Diode according to claim 1 and 2 is characterized in that: described plastic-sealed body (4) is a cylinder, or is square cylinder, and described encapsulate layer (3) is the silica gel encapsulate, and plastic-sealed body (4) is the epoxy resin plastic packaging.
4. bidirectional high-pressure Transient Suppression Diode according to claim 3, it is characterized in that: first group of diode chip for backlight unit group (1-1) comprises 2 Transient Suppression Diode chips (1-1-1,1-1-2), and second group of diode chip for backlight unit group (1-2) also comprises 2 Transient Suppression Diode chips (1-2-1,1-2-2).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105965351A CN102082140A (en) | 2010-12-20 | 2010-12-20 | Bilateral high-voltage transient voltage suppressor (TVS) |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN102881587A (en) * | 2012-10-17 | 2013-01-16 | 如皋市大昌电子有限公司 | Novel laminated diode manufacturing process and chip sieve tray thereof |
| CN103441122A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | High-voltage TVS diode |
| CN103441121A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | High-voltage TVS composite chip diode |
| CN103871874A (en) * | 2012-12-17 | 2014-06-18 | 中国振华集团永光电子有限公司 | Manufacturing method and structure of high-power silicon transient voltage suppressor diode |
| CN104362140A (en) * | 2014-10-11 | 2015-02-18 | 东莞市柏尔电子科技有限公司 | Diode group with selectable current magnitude |
| CN104347565B (en) * | 2013-07-23 | 2017-02-15 | 中国振华集团永光电子有限公司 | Transient voltage suppression diode packaging structure |
| CN108198760A (en) * | 2017-12-28 | 2018-06-22 | 常州银河电器有限公司 | A kind of manufacturing method of high back-pressure stamp-mounting-paper diode |
| CN108461459A (en) * | 2018-04-02 | 2018-08-28 | 日照鲁光电子科技有限公司 | A kind of cathode docking biphase rectification diode and its manufacturing process |
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| CN201549505U (en) * | 2009-11-27 | 2010-08-11 | 中国振华集团永光电子有限公司 | Glass passivation packaging transient voltage suppression diode structure |
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| CN101630677A (en) * | 2009-08-11 | 2010-01-20 | 常州佳讯光电产业发展有限公司 | High-frequency quick-recovery diode |
| CN201549505U (en) * | 2009-11-27 | 2010-08-11 | 中国振华集团永光电子有限公司 | Glass passivation packaging transient voltage suppression diode structure |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN102709276B (en) * | 2012-06-16 | 2014-11-12 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN102881587A (en) * | 2012-10-17 | 2013-01-16 | 如皋市大昌电子有限公司 | Novel laminated diode manufacturing process and chip sieve tray thereof |
| CN102881587B (en) * | 2012-10-17 | 2015-03-25 | 如皋市大昌电子有限公司 | Laminated diode manufacturing process and chip sieve tray thereof |
| CN103871874A (en) * | 2012-12-17 | 2014-06-18 | 中国振华集团永光电子有限公司 | Manufacturing method and structure of high-power silicon transient voltage suppressor diode |
| CN104347565B (en) * | 2013-07-23 | 2017-02-15 | 中国振华集团永光电子有限公司 | Transient voltage suppression diode packaging structure |
| CN103441122A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | High-voltage TVS diode |
| CN103441121A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | High-voltage TVS composite chip diode |
| CN104362140A (en) * | 2014-10-11 | 2015-02-18 | 东莞市柏尔电子科技有限公司 | Diode group with selectable current magnitude |
| CN104362140B (en) * | 2014-10-11 | 2017-01-25 | 东莞市柏尔电子科技有限公司 | Diode group with selectable current magnitude |
| CN108198760A (en) * | 2017-12-28 | 2018-06-22 | 常州银河电器有限公司 | A kind of manufacturing method of high back-pressure stamp-mounting-paper diode |
| CN108461459A (en) * | 2018-04-02 | 2018-08-28 | 日照鲁光电子科技有限公司 | A kind of cathode docking biphase rectification diode and its manufacturing process |
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Application publication date: 20110601 |