CN112289786A - Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode - Google Patents
Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode Download PDFInfo
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- CN112289786A CN112289786A CN202011140364.1A CN202011140364A CN112289786A CN 112289786 A CN112289786 A CN 112289786A CN 202011140364 A CN202011140364 A CN 202011140364A CN 112289786 A CN112289786 A CN 112289786A
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- gpp
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- rectifier diode
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- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 title claims abstract description 51
- 238000011084 recovery Methods 0.000 title claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims abstract description 12
- 230000004907 flux Effects 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000005022 packaging material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000007787 solid Substances 0.000 abstract description 6
- 230000006872 improvement Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 239000003292 glue Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a multilayer chip RFC4K ultrahigh voltage resistance GPP axial fast recovery rectifier diode, which comprises a shell; copper leads mounted on both sides of the case; a plurality of GPP chips are arranged and are all arranged in the shell; the solid welding flux layers are used for welding two adjacent GPP chips and conducting the adjacent GPP chips mutually, wherein the two solid welding flux layers positioned on the opposite surfaces of the two copper leads weld the GPP chips and the copper leads together, and the cost is firstly reduced: the investment of fixed equipment is low, the utilization rate of personnel is high, the labor cost is reduced, and the manufacturing cost is reduced; secondly, the improvement of the automation feasibility is realized, and most of the invention can realize the automatic manufacture; and finally, the electrical reliability and the manufacturing yield of the ultrahigh voltage-resistant rectifier diode are improved.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a multilayer chip RFC4K ultrahigh voltage-resistant GPP axial fast recovery rectifier diode.
Background
The existing high reverse voltage-resistant fast-recovery axial rectifier diode is formed by passivating and packaging a table top by adopting a multilayer pickling chip and electronic-grade silicon rubber white glue.
The defects are as follows:
first, the chip unit used in the conventional packaged high-voltage rectifier diode is an acid-washed chip, which is a semi-finished product manufactured by a chip factory, and the electrical properties of the chip are such that a damaged layer of 50 to 100 microns is formed on the peripheral mesa of a crystal grain due to cutting when the chip is divided into the crystal grain. The damage layer has damaged the electrical performance of the diode chip and needs to be removed, and other substances are needed to protect the layer after the damage layer is removed. Therefore, when the chip is packaged by an account sealing factory, one or more processes for removing the damaged layer and the protective layer are required to be added, the process for etching the damaged layer by using acid in a diode packaging factory is called an acid washing process in the packaging process, and the process for attaching the protective layer is called a white glue coating process, so that the chip is also called an acid washing chip, which is called an OJ chip for short, namely an acid washing white glue passivated chip. The packaging of the manufacturing mode can use a large amount of strong acid liquid to corrode the chip and use a large amount of ultrapure water to clean the chip, thereby having the defects of serious environmental pollution, water resource waste and the like.
Second, the existing package uses high voltage rectifier diodes. The packaging process adopts the processes that a chip manufacturer purchases a chip, the chip is subjected to wafer scribing, the chip is subjected to chip splitting, the chip is assembled, the chip is welded, the chip is overturned, the chip is pickled, the comb bar is converted, the drying is carried out, the glue is applied on the film, the white glue is solidified, the mould pressing is carried out, the tin is applied, the quick acting is carried out, the typing is carried out, the ⒄ OQC is carried out, and the storage is carried out for 18 processes. The process is more complicated, the production site, personnel and fixed asset investment are very high, and the unit manufacturing cost is very high.
Thirdly, the high-voltage rectifier diode adopted by the existing packaging adopts an acid-washing chip. In the aspect of mesa protection, electronic-grade liquid silicon rubber is adopted as a protective layer of the mesa of the chip. Because the surface of the chip is coated by manpower and machines, the thickness controllability of the coated protective layer is not high, so that the quality of the protective layer is unstable and the quality of the high-voltage and ultrahigh-voltage electrical performance cannot be guaranteed.
For this reason, we propose a multilayer chip RFC4K ultra-high voltage resistance GPP axial fast recovery rectifier diode.
Disclosure of Invention
The invention aims to provide a multilayer chip RFC4K ultra-high voltage resistance GPP axial fast recovery rectifier diode to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: multilayer chip RFC4K ultrahigh voltage resistance GPP axial fast recovery rectifier diode includes:
a housing;
copper leads mounted on both sides of the case;
a plurality of GPP chips are arranged and are all arranged in the shell;
and the solid-state welding flux layers are used for welding two adjacent GPP chips and mutually conducting the adjacent GPP chips, and the two solid-state welding flux layers positioned on the opposite surfaces of the two copper leads weld the GPP chips and the copper leads together.
Preferably, the GPP chip near one side of one of the copper leads is a fast recovery diode chip, and the rest of the GPP chips are ordinary diode chips.
Preferably, the GPP chip includes a chip crystal grain portion, and an N-plane and a P-plane located at two sides of the chip crystal grain portion, and a surface of the chip crystal grain portion is provided with a silicon dioxide layer.
Preferably, the area of the P surface is larger than that of the N surface or the area of the N surface is larger than that of the P surface.
Preferably, a tin plating layer is arranged on the outer side of the copper lead.
Preferably, the shell is made of epoxy plastic packaging material.
Compared with the prior art, the invention has the beneficial effects that:
firstly, the cost is reduced: the investment of fixed equipment is small, the utilization rate of personnel is high, the labor cost is reduced, and the manufacturing cost is reduced.
Secondly, the improvement of the automation feasibility is realized, and most of the invention can realize the automatic manufacture.
And finally, the electrical reliability and the manufacturing yield of the ultrahigh voltage-resistant rectifier diode are improved.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of a partial structure of the present invention;
FIG. 3 is a diagram of a GPP chip structure according to the present invention.
In the figure: 1-a housing; 2-copper lead wire; 3-a common diode chip; 4-fast recovery diode chip; 5-chip die portion; 6-a silicon dioxide layer; 7-tin plating; 8-solid solder layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution: multilayer chip RFC4K ultrahigh voltage resistance GPP axial fast recovery rectifier diode includes:
a housing 1;
copper leads 2 mounted on both sides of the case 1;
a plurality of GPP chips are arranged and are all arranged in the shell 1;
and the solid solder layers 8 are provided with a plurality of solid solder layers and used for welding two adjacent GPP chips and conducting the adjacent GPP chips mutually, wherein the two solid solder layers 8 positioned on the opposite surfaces of the two copper leads 2 weld the GPP chips and the copper leads 2 together.
The GPP chip close to one side of one copper lead 2 is a fast recovery diode chip 4, the rest GPP chips are ordinary diode chips 3, and chip crystal grains with more than 2 layers to 10 layers can be welded in series without subsequent acid washing and white glue coating. The ultrahigh voltage is 3000V to 8000V, the common diode chip 3 is an STD common rectifier diode chip, and the fast recovery diode chip can be an FR, SF or HER fast reverse recovery time chip. The chip is quickly restored to a reverse cut-off state when the forward direction is converted into the reverse direction, and reverse current is prevented from burning circuit devices.
As shown in fig. 3, the GPP chip includes a chip crystal grain portion 5, and an N-plane and a P-plane located on two sides of the chip crystal grain portion 5, and a silicon dioxide layer 6 is disposed on a surface of the chip crystal grain portion 5.
The area of the P surface is larger than that of the N surface or the area of the N surface is larger than that of the P surface, the ultrahigh voltage-resistant fast recovery rectifier diode (R FC4K) directly uses the GPP chip crystal grain, a chip manufacturer already makes a table top and manufactures an optimal SIO2 glass protective layer on the table top, and the N surface of the chip is smaller than the P surface or the P surface is smaller than the N surface, so that the physical patterns of the chip are well distinguished in direction, and the two surfaces are not marked in the subsequent manufacturing and assembling process.
And a tin coating 7 is arranged on the outer side of the copper lead 2.
The shell 1 is made of epoxy plastic package material.
The chip connecting sheet and the copper lead 2 are assembled together to form a diode series connection to achieve the high-voltage purpose, and the GPP chip does not need subsequent acid washing and white glue application, so that the mode of connecting the chip can achieve about 10 layers and can meet the ultra-high voltage withstanding degree of 3000-8000V, and the high-voltage diode assembled on the sintering disc is welded together to form a multi-chip whole through a welding furnace. A layer of epoxy plastic packaging material is subjected to mould pressing and hot injection molding to serve as a protective layer and improve the using mechanical property. And (4) well soldering the pins and printing the type and polarity on the epoxy body to complete the product.
The invention provides an improved package, which directly adopts a GPP chip for packaging. Since GPP chips are commercially available directly, the chips have already been protected from mesas and mesa passivation at the chip factory. The chip is a finished product. Diode manufacturers use such chip packages without having to re-fabricate the chip mesa and mesa protection. The packaging process comprises the following steps:
GPP chip purchase- - -assembly- - -welding- - -mould pressing solidification- - -tin coating- - -drawing to form to store- - -OQC- - -9 working procedures.
Secondly, the method comprises the following steps: the GPP chip is adopted, and the glass powder adopted by the GPP chip is coated on the table top of the chip and then is sintered to form a passivation layer with stable electrical performance.
Thirdly, the invention adopts the multilayer GPP chips to assemble the high voltage-resistant diode in a stacking and series connection mode, and realizes the ultrahigh voltage reverse voltage-resistant electrical performance with the voltage resistance of 3000 to 8000V after the whole series connection is finished.
Fourthly, the invention connects a reverse ultrafast recovery GPP chip with compound factors in series in a multilayer GPP common chip as a reverse compound center to prevent voltage and current recoil when the ultrahigh voltage positive and negative conversion is achieved. Therefore, the multilayer chip R FC4K ultra-high voltage-withstanding GPP fast recovery rectifier diode is realized, and the electrical performance and index of fast reverse recovery time are achieved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. Multilayer chip RFC4K ultrahigh voltage resistance GPP axial fast recovery rectifier diode, its characterized in that includes:
a housing (1);
copper leads (2) mounted on both sides of the case (1);
a plurality of GPP chips are arranged and are all arranged in the shell (1);
and the solid-state welding flux layers (8) are used for welding two adjacent GPP chips and conducting the adjacent GPP chips mutually, wherein the two solid-state welding flux layers (8) positioned on the opposite surfaces of the two copper leads (2) are used for welding the GPP chips and the copper leads (2) together.
2. The multi-layer chip RFC4K ultra high voltage withstand (GPP) axial fast recovery rectifier diode of claim 1, wherein: the GPP chip close to one side of one copper lead (2) is a fast recovery diode chip (4), and the rest GPP chips are ordinary diode chips (3).
3. The multi-layer chip RFC4K ultra high voltage withstand (GPP) axial fast recovery rectifier diode of claim 1, wherein: the GPP chip comprises a chip crystal grain part (5), an N surface and a P surface which are positioned on two sides of the chip crystal grain part (5), and a silicon dioxide layer (6) is arranged on the surface of the chip crystal grain part (5).
4. The multi-layer chip RFC4K ultra high voltage withstand (GPP) axial fast recovery rectifier diode of claim 3, wherein: the area of the P surface is larger than that of the N surface or the area of the N surface is larger than that of the P surface.
5. The multi-layer chip RFC4K ultra high voltage withstand (GPP) axial fast recovery rectifier diode of claim 1, wherein: and a tin coating (7) is arranged on the outer side of the copper lead (2).
6. The multi-layer chip RFC4K ultra high voltage withstand (GPP) axial fast recovery rectifier diode of claim 1, wherein: the shell (1) is made of epoxy plastic packaging material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011140364.1A CN112289786A (en) | 2020-10-22 | 2020-10-22 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011140364.1A CN112289786A (en) | 2020-10-22 | 2020-10-22 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112289786A true CN112289786A (en) | 2021-01-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011140364.1A Pending CN112289786A (en) | 2020-10-22 | 2020-10-22 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112289786A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07245341A (en) * | 1994-03-08 | 1995-09-19 | Rohm Co Ltd | Mesa semiconductor chip, semiconductor device incorporating it, and their manufacture |
| CN201752014U (en) * | 2010-07-02 | 2011-02-23 | 重庆平伟实业股份有限公司 | Super-high voltage semiconductor rectifier |
| CN203150557U (en) * | 2013-03-28 | 2013-08-21 | 上海瞬雷电子科技有限公司 | Reverse direction GPP high voltage diode chip in automobile module group |
| CN203386762U (en) * | 2013-08-12 | 2014-01-08 | 南通康比电子有限公司 | Mesa-type glassivation diode chip |
| CN205231039U (en) * | 2015-12-02 | 2016-05-11 | 四川上特科技有限公司 | High withstand voltage mesa diode chip |
| CN105977309A (en) * | 2016-07-23 | 2016-09-28 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-reliability anti-radiation glass-passivation fast-recovery rectifier diode manufacturing method |
| CN207338366U (en) * | 2017-07-05 | 2018-05-08 | 常州佳讯光电产业发展有限公司 | High-frequency and high-voltage glassivation lamination diode |
| CN109244043A (en) * | 2018-08-01 | 2019-01-18 | 上海艾续电子科技有限公司 | New automobile igniter high-voltage diode |
-
2020
- 2020-10-22 CN CN202011140364.1A patent/CN112289786A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07245341A (en) * | 1994-03-08 | 1995-09-19 | Rohm Co Ltd | Mesa semiconductor chip, semiconductor device incorporating it, and their manufacture |
| CN201752014U (en) * | 2010-07-02 | 2011-02-23 | 重庆平伟实业股份有限公司 | Super-high voltage semiconductor rectifier |
| CN203150557U (en) * | 2013-03-28 | 2013-08-21 | 上海瞬雷电子科技有限公司 | Reverse direction GPP high voltage diode chip in automobile module group |
| CN203386762U (en) * | 2013-08-12 | 2014-01-08 | 南通康比电子有限公司 | Mesa-type glassivation diode chip |
| CN205231039U (en) * | 2015-12-02 | 2016-05-11 | 四川上特科技有限公司 | High withstand voltage mesa diode chip |
| CN105977309A (en) * | 2016-07-23 | 2016-09-28 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-reliability anti-radiation glass-passivation fast-recovery rectifier diode manufacturing method |
| CN207338366U (en) * | 2017-07-05 | 2018-05-08 | 常州佳讯光电产业发展有限公司 | High-frequency and high-voltage glassivation lamination diode |
| CN109244043A (en) * | 2018-08-01 | 2019-01-18 | 上海艾续电子科技有限公司 | New automobile igniter high-voltage diode |
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