CN109244043A - New automobile igniter high-voltage diode - Google Patents
New automobile igniter high-voltage diode Download PDFInfo
- Publication number
- CN109244043A CN109244043A CN201810864765.8A CN201810864765A CN109244043A CN 109244043 A CN109244043 A CN 109244043A CN 201810864765 A CN201810864765 A CN 201810864765A CN 109244043 A CN109244043 A CN 109244043A
- Authority
- CN
- China
- Prior art keywords
- dry type
- phosphor bronze
- type phosphor
- lead
- gpp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 claims abstract description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000906 Bronze Inorganic materials 0.000 claims abstract description 23
- 239000010974 bronze Substances 0.000 claims abstract description 23
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000003822 epoxy resin Substances 0.000 claims abstract description 12
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 12
- 239000003292 glue Substances 0.000 claims abstract description 11
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 239000004593 Epoxy Substances 0.000 claims abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
This application discloses a kind of new automobile igniter high-voltage diodes.It include: the GPP chip of parallel multi-layer antisurge and the polyimides glue for coating the GPP chip, polyimides glue outer surface is encapsulated by epoxy resin, it is connected between the GPP chip by solder, multiple GPP chips directly pass through the connection of dry type phosphor bronze lead, and the dry type phosphor bronze lead exposes epoxy packages part and is provided with electrotinning；Using multiple GPP chips directly by way of dry type phosphor bronze lead connection, pass through dry type phosphor bronze lead special hardness and toughness, achieve the purpose that lead with brake forming but also can will not only fracture, to realize the technical effect of diode accurate forming, and then the technical problem that the reliability for solving igniter for automobile high-voltage diode in the related technology is not high.
Description
Technical field
This application involves semiconductor fields, in particular to a kind of new automobile igniter high-voltage diode.
Background technique
What high-voltage diode in the related technology mostly used is O.J chip technology, since chip only leans on protective glue (silicon rubber
Or polyimides glue) protection, cause electrical reliability unstable；There are also a kind of GPP chip technologies, but due to GPP chip glass
For protective layer vulnerable to stress impact, machining property is poor, and it is unstable to also result in client's use reliability, is unable to satisfy automobile point
The high reliability request of firearm high-voltage diode.
Therefore, it is badly in need of a kind of new automobile igniter high-voltage diode, to solve igniter for automobile high pressure in the related technology
The not high technical problem of the reliability of diode.
Summary of the invention
The main purpose of the application is to provide a kind of new automobile igniter high-voltage diode, to solve in the related technology
The not high technical problem of the reliability of igniter for automobile high-voltage diode.
To achieve the goals above, according to the one aspect of the application, a kind of new automobile igniter high pressure two is provided
Pole pipe.
New automobile igniter high-voltage diode according to the application includes: the GPP chip and packet of parallel multi-layer antisurge
Cover the polyimides glue of the GPP chip, polyimides glue outer surface is encapsulated by epoxy resin, the GPP chip it
Between connected by solder, multiple GPP chips directly pass through the connection of dry type phosphor bronze lead, dry type phosphor bronze lead dew
Epoxy packages part is provided with electrotinning out.
Further, the material of the dry type phosphor bronze lead is CuSn6.
Further, the tensile strength of the dry type phosphor bronze lead is 400-500N/mm2.
Further, the epoxy resin is fusion low-strees epoxy resin.
In the embodiment of the present application, using multiple GPP chips directly by way of dry type phosphor bronze lead connection,
By dry type phosphor bronze lead special hardness and toughness, achieve the purpose that lead with brake forming but also can will not only fracture,
To realizing the technical effect of diode accurate forming, and then solves igniter for automobile high-voltage diode in the related technology
The not high technical problem of reliability.
Detailed description of the invention
The attached drawing constituted part of this application is used to provide further understanding of the present application, so that the application's is other
Feature, objects and advantages become more apparent upon.The illustrative examples attached drawing and its explanation of the application is for explaining the application, not
Constitute the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the structural schematic diagram according to herein described diode.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, below in conjunction in the embodiment of the present application
Attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is only
The embodiment of the application a part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's every other embodiment obtained without making creative work, all should belong to the model of the application protection
It encloses.
It should be noted that the description and claims of this application and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to embodiments herein described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
In this application, term " on ", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outside",
" in ", "vertical", "horizontal", " transverse direction ", the orientation or positional relationship of the instructions such as " longitudinal direction " be orientation based on the figure or
Positional relationship.These terms are not intended to limit indicated dress primarily to better describe the present invention and embodiment
Set, element or component must have particular orientation, or constructed and operated with particular orientation.
Also, above-mentioned part term is other than it can be used to indicate that orientation or positional relationship, it is also possible to for indicating it
His meaning, such as term " on " also are likely used for indicating certain relations of dependence or connection relationship in some cases.For ability
For the those of ordinary skill of domain, the concrete meaning of these terms in the present invention can be understood as the case may be.
In addition, term " installation ", " setting ", " being equipped with ", " connection ", " connected ", " socket " shall be understood in a broad sense.For example,
It may be a fixed connection, be detachably connected or monolithic construction；It can be mechanical connection, or electrical connection；It can be direct phase
It even, or indirectly connected through an intermediary, or is two connections internal between device, element or component.
For those of ordinary skills, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
As shown in Figure 1, including: parallel multi-layer antisurge this application involves a kind of new automobile igniter high-voltage diode
GPP chip 1 and the polyimides glue 3 for coating the GPP chip 1,3 outer surface of polyimides glue pass through 4 envelope of epoxy resin
It filling, is connected between the GPP chip 1 by solder 2, multiple GPP chips 1 are directly connected by dry type phosphor bronze lead 5,
The dry type phosphor bronze lead 5 exposes epoxy packages part and is provided with electrotinning 6.
In some embodiments of the present application, the material of the dry type phosphor bronze lead 5 is CuSn6, and the dry type phosphorus is green
The tensile strength of copper lead 5 is 400-500N/mm2, specifically, the dry type phosphor bronze lead 5 is phosphor bronze material (CuSn6
Tensile strength: 400~500N/mm2), it is ensured that lead hardness, avoided hard lead-in wire can not brake forming be installed in igniter,
Avoid lead excessively it is soft it is easy to install easily fracture during folding, while excessively soft lead is easily-deformable, can not accurate forming, location and installation
The problem of, it is ensured that diode, which passes through full-automatic production equipment, to be installed on igniter；The dry type phosphor bronze lead is adopted
It is designed with dry type, reinforces the combination of epoxy and lead, while wire stress impact is buffered by first of transverse structure, avoid answering
Power is transmitted to lead and chip contact surface.When reducing diode forming and use process is to the stress of 1 glassivation of GPP chip
Impact.
Preferably, the GPP chip 1 is coated using polyimides glue 3, using its high resistivity, realizes the resistance to height of diode
Back-pressure requires (4000V), while high voltage surge causes chip interior to be struck sparks when igniter being avoided to work.
Preferably, the GPP chip 1 uses glass passivation protection technique, and high-temperature stability is higher, while can be in assembling two
Test screen is carried out before pole pipe, avoids defective chips from influencing the yield rate and reliability of diode, using parallel multi-layer GPP core
The design of piece 1 breaks through the silicon base chip reverse withstand voltage limit, realizes that resistance to high back-pressure requires (4000V).
In some embodiments of the present application, the epoxy resin 4 is fusion low-strees epoxy resin, specifically, adopting
Ordinary epoxy resin is substituted with fusion low-strees epoxy resin, reduces epoxy forming process to 1 glassivation of GPP chip
Stress impact, while epoxy thermal expansion coefficient reduces inside diode, the various height for avoiding diode from using in igniter for automobile
Epoxy internal stress causes chip to damage under low or warm extreme-temperature environment.
Preferably, in the 5 electroplating surface tin 6 of dry type phosphor bronze lead, improve it is silver-plated it is oxidizable lead to solderability problem,
It, can also be with electroplating other metals material in the other embodiments of the application.
It can be seen from the above description that the application realizes following technical effect:
In the embodiment of the present application, using multiple GPP chips directly by way of dry type phosphor bronze lead connection,
By dry type phosphor bronze lead special hardness and toughness, achieve the purpose that lead with brake forming but also can will not only fracture,
To realizing the technical effect of diode accurate forming, and then solves igniter for automobile high-voltage diode in the related technology
The not high technical problem of reliability.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (4)
1. a kind of new automobile igniter high-voltage diode characterized by comprising the GPP chip (1) of parallel multi-layer antisurge
With the polyimides glue (3) for coating the GPP chip (1), polyimides glue (3) outer surface is sealed by epoxy resin (4)
It fills, is connected between the GPP chip (1) by solder (2), multiple GPP chips (1) directly pass through dry type phosphor bronze lead
(5) it connects, the dry type phosphor bronze lead (5) exposes epoxy packages part and is provided with electrotinning (6).
2. new automobile igniter high-voltage diode according to claim 1, which is characterized in that the dry type phosphor bronze draws
The material of line (5) is CuSn6。
3. new automobile igniter high-voltage diode according to claim 1, which is characterized in that the dry type phosphor bronze draws
The tensile strength of line (5) is 400-500N/mm2。
4. new automobile igniter high-voltage diode according to claim 1, which is characterized in that the epoxy resin (4)
For fusion low-strees epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810864765.8A CN109244043A (en) | 2018-08-01 | 2018-08-01 | New automobile igniter high-voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810864765.8A CN109244043A (en) | 2018-08-01 | 2018-08-01 | New automobile igniter high-voltage diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109244043A true CN109244043A (en) | 2019-01-18 |
Family
ID=65073433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810864765.8A Pending CN109244043A (en) | 2018-08-01 | 2018-08-01 | New automobile igniter high-voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109244043A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987067A (en) * | 2020-07-30 | 2020-11-24 | 吉林华微电子股份有限公司 | Device lead assembly and semiconductor device |
| CN112289786A (en) * | 2020-10-22 | 2021-01-29 | 深圳市海弘建业科技有限公司 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
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|---|---|---|---|---|
| CN201262951Y (en) * | 2008-08-21 | 2009-06-24 | 常州星海电子有限公司 | Low stress sheet type diode |
| CN201877425U (en) * | 2010-09-15 | 2011-06-22 | 上海美高森美半导体有限公司 | High-voltage silicon stack |
| CN102142371A (en) * | 2010-12-29 | 2011-08-03 | 常州星海电子有限公司 | Process for manufacturing photovoltaic bypass Schottky diode |
| CN201975395U (en) * | 2010-10-18 | 2011-09-14 | 重庆平伟实业股份有限公司 | Efficient semiconductor diode |
| CN202259312U (en) * | 2011-08-29 | 2012-05-30 | 程志强 | Electronic diode |
| CN202871802U (en) * | 2012-11-07 | 2013-04-10 | 如皋市大昌电子有限公司 | Plastic packaging epitaxial ultrafast recovery diode |
| CN203103299U (en) * | 2013-01-25 | 2013-07-31 | 上海美高森美半导体有限公司 | Highly reliable high-voltage diode for automobile igniter |
| CN103871978A (en) * | 2012-12-18 | 2014-06-18 | 株式会社东芝 | Semiconductor device |
| CN204732407U (en) * | 2015-06-15 | 2015-10-28 | 常州银河电器有限公司 | Kenotron |
| CN204834693U (en) * | 2015-08-10 | 2015-12-02 | 乐山无线电股份有限公司 | Novel anti stress diode |
-
2018
- 2018-08-01 CN CN201810864765.8A patent/CN109244043A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201262951Y (en) * | 2008-08-21 | 2009-06-24 | 常州星海电子有限公司 | Low stress sheet type diode |
| CN201877425U (en) * | 2010-09-15 | 2011-06-22 | 上海美高森美半导体有限公司 | High-voltage silicon stack |
| CN201975395U (en) * | 2010-10-18 | 2011-09-14 | 重庆平伟实业股份有限公司 | Efficient semiconductor diode |
| CN102142371A (en) * | 2010-12-29 | 2011-08-03 | 常州星海电子有限公司 | Process for manufacturing photovoltaic bypass Schottky diode |
| CN202259312U (en) * | 2011-08-29 | 2012-05-30 | 程志强 | Electronic diode |
| CN202871802U (en) * | 2012-11-07 | 2013-04-10 | 如皋市大昌电子有限公司 | Plastic packaging epitaxial ultrafast recovery diode |
| CN103871978A (en) * | 2012-12-18 | 2014-06-18 | 株式会社东芝 | Semiconductor device |
| CN203103299U (en) * | 2013-01-25 | 2013-07-31 | 上海美高森美半导体有限公司 | Highly reliable high-voltage diode for automobile igniter |
| CN204732407U (en) * | 2015-06-15 | 2015-10-28 | 常州银河电器有限公司 | Kenotron |
| CN204834693U (en) * | 2015-08-10 | 2015-12-02 | 乐山无线电股份有限公司 | Novel anti stress diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987067A (en) * | 2020-07-30 | 2020-11-24 | 吉林华微电子股份有限公司 | Device lead assembly and semiconductor device |
| CN112289786A (en) * | 2020-10-22 | 2021-01-29 | 深圳市海弘建业科技有限公司 | Multilayer chip RFC4K ultrahigh voltage-withstanding GPP axial fast recovery rectifier diode |
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| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190118 |
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| RJ01 | Rejection of invention patent application after publication |