CN101626010A - Chip on film packaging structure and chip on film packaging method - Google Patents
Chip on film packaging structure and chip on film packaging method Download PDFInfo
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- CN101626010A CN101626010A CN200810133051A CN200810133051A CN101626010A CN 101626010 A CN101626010 A CN 101626010A CN 200810133051 A CN200810133051 A CN 200810133051A CN 200810133051 A CN200810133051 A CN 200810133051A CN 101626010 A CN101626010 A CN 101626010A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 239000010409 thin film Substances 0.000 claims description 78
- 238000012856 packing Methods 0.000 claims description 74
- 239000004020 conductor Substances 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 30
- 238000005538 encapsulation Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 14
- 238000007639 printing Methods 0.000 claims description 3
- 239000000872 buffer Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Laminated Bodies (AREA)
Abstract
The invention discloses a chip on film packaging structure, which comprises a flexible substrate, a lead layer, an insulating layer and an elastic layer. The flexible substrate has a surface; the lead layer is formed on the surface and is provided with a plurality of leads; the insulating layer is formed on the lead layer; and the elastic layer is formed on the insulating layer and corresponds to at least one of the leads. When the flexible substrate is bent under the action of an external force, the elastic layer can buffer the deformation of the corresponding lead. Therefore, the rupture, caused by over deformation, of the corresponding lead can be avoided. The invention also provides a chip on film packaging method, which can improve the folding endurance of the chip on film packaging structure so as to solve the problem of the prior art.
Description
Technical field
The present invention relates to a kind ofly cover brilliant thin-film packing structure and cover brilliant film encapsulation method, and especially, the present invention relates to a kind of increase the brilliant thin-film packing structure of covering of folding strength and finish this cover the brilliant film encapsulation method of covering of brilliant thin-film packing structure.
Background technology
Because constantly towards the development of characteristics such as miniaturization, high speed and high pin number, the encapsulation technology of IC is also towards the continuous evolution of this direction for electronic product now, (Liquid CrystalDisplay, LCD) drive IC on is no exception for LCD.Wherein, covering brilliant thin-film package technology can provide above-mentioned functions and can be used for flexible circuit board, is fit to be used in the drive IC encapsulation of LCD.
Chip package technology general reference sees through metallic conductor in ventricumbent mode and engages with substrate after chip is overturn.When being applied to flexible base plate, its chip can be fixed on the film, only depends on metallic conductor and flexible base plate to electrically connect, therefore be called cover brilliant thin-film package (ChipOn Film, COF).
See also Fig. 1, Fig. 1 shows the end view that covers brilliant thin-film packing structure 1 in the prior art.As shown in Figure 1, cover on the substrate 10 of brilliant thin-film packing structure 1 conductor layer 12 is set, and on the conductor layer 12 insulating barrier 14 is set further.Chip 16 electrically connects by metal coupling 18 and conductor layer 12.Fill insulant 19 around chip 16 and the metal coupling 18 in order to fixed chip 16 and metal coupling 18, and further insulate to fixed chip 16 and metal coupling 18.
To cover the drive IC trend high pin number and the meticulousr conductor width of brilliant thin-film package.Yet under the more and more narrow situation of conductor width, when flexible base plate was crooked, lead might impaired or fracture, and reduced even lose transfer function.In other words, the folding strength of covering brilliant thin-film packing structure will reduce with pin count and the development of lead live width.Above-mentioned situation will cause the yield of drive IC and reliability and have a strong impact on.On the other hand, because pin count in the unit are and lead number improve, the heat of generation is with more difficult loss, and therefore, heat dissipation problem also becomes the research emphasis of covering brilliant thin-film packing structure.
Summary of the invention
Therefore, one object of the present invention is to provide a kind of brilliant thin-film packing structure that covers, and can increase the folding strength of its structure, to address the above problem.
According to a specific embodiment, of the present inventionly cover brilliant thin-film packing structure and comprise flexible base plate, conductor layer, insulating barrier and elastic layer.Conductor layer is formed on the surface of flexible base plate, and it comprises many leads.Insulating barrier is formed on the conductor layer, and elastic layer then further is formed on the insulating barrier, and the position of further corresponding at least one lead.
In this specific embodiment, when flexible base plate is subjected to external force and when crooked, elastic layer available buffer lead is because of the crooked deformation that produces, and makes the not excessive deformation of reason and rupturing of lead, therefore, the elastic layer of this specific embodiment can increase the folding strength of covering brilliant thin-film packing structure.
Cover brilliant thin-film packing structure according to of the present invention, further comprise the chip that is arranged on this surface and electrically connects this conductor layer.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this elastic layer extends and covers this chip.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this chip electrically connects this conductor layer by conductive projection.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this chip is a LCD device drive chip.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this elastic layer is formed on this insulating barrier by stencil printing.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this elastic layer is made by the high conductance material.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, have at least one hole on this insulating barrier, and this high conductance material is filled in this at least one hole with near to or in contact with this conductor layer.
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this high conductance material is elargol (silver epoxy).
Cover brilliant thin-film packing structure according to of the present invention, in one embodiment, this elastic layer ground connection.
According to another specific embodiment, elastic layer can be high conductance (high-termal conductivity or high conductivity) material.In this specific embodiment, elastic layer can be formed at and cover the zone that heat on the polycrystalline structure film is difficult for loss, for example intensive zone of chip or pin and lead.By means of elastomeric high-termal conductivity, can help to cover brilliant thin-film packing structure and dispel the heat.
Another object of the present invention is to provide a kind of brilliant film encapsulation method that covers, can increase the folding strength of covering brilliant thin-film packing structure, to solve prior art problems.
According to a specific embodiment, of the present inventionly cover brilliant film encapsulation method and comprise the following step: at first, the preparation flexible base plate; Then, form conductor layer on the surface of flexible base plate, wherein conductor layer comprises many leads; Afterwards, on conductor layer, form insulating barrier; At last, on insulating barrier, form the elastic layer of corresponding at least one lead.
The brilliant thin-film packing structure that covers that brilliant film encapsulation method finishes that covers according to this specific embodiment, when flexible base plate is subjected to external force and when crooked, elastic layer available buffer lead is because of the crooked deformation that produces, make the not excessive deformation of reason and rupturing of lead, therefore, the formed elastic layer of this specific embodiment can increase the folding strength of covering brilliant thin-film packing structure.
Cover brilliant film encapsulation method according to of the present invention, further comprise with cover brilliant thin-film technique with Chip Packaging on this surface and electrically connect the step of this conductor layer.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this elastic layer extends and covers this chip.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this chip electrically connects this conductor layer by conductive projection.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this chip is a LCD device drive chip.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this elastic layer is formed on this insulating barrier by stencil printing.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this elastic layer is made by the high conductance material.
Cover brilliant film encapsulation method according to of the present invention, further comprise the following step: on this insulating barrier, form at least one hole; And this high conductance material is filled in this at least one hole with near to or in contact with this conductor layer.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this high conductance material is an elargol.
Cover brilliant film encapsulation method according to of the present invention, in one embodiment, this elastic layer ground connection.
According to another specific embodiment, the above-mentioned formed elastic layer of brilliant film encapsulation method that covers can be high conductance (high-termal conductivity or high conductivity) material.In this specific embodiment, elastic layer can be arranged at and cover the zone that heat on the brilliant thin-film packing structure is difficult for loss, for example, and the zone that chip or pin and lead are intensive.By means of elastomeric high-termal conductivity, can help to cover brilliant thin-film packing structure and dispel the heat.
Can be further understood by the following detailed description and accompanying drawings about the advantages and spirit of the present invention.
Description of drawings
Fig. 1 shows the end view that covers brilliant thin-film packing structure in the prior art.
Fig. 2 shows the schematic diagram that covers brilliant thin-film packing structure according to a specific embodiment of the present invention.
Fig. 3 shows the schematic diagram that covers brilliant thin-film packing structure of another specific embodiment according to the present invention.
Fig. 4 shows the schematic diagram that covers brilliant thin-film packing structure according to another specific embodiment of the present invention.
Fig. 5 shows the flow chart of steps of covering brilliant film encapsulation method according to a specific embodiment of the present invention.
Fig. 6 shows the flow chart of steps of covering brilliant film encapsulation method according to another specific embodiment of the present invention.
Embodiment
See also Fig. 2, Fig. 2 shows the schematic diagram according to the brilliant thin-film packing structure 2 of covering of a specific embodiment of the present invention.As shown in Figure 2, cover brilliant thin-film packing structure 2 in order to chip 3 is packaged on the flexible base plate 20, and, cover brilliant thin-film packing structure 2 and comprise flexible base plate 20, conductor layer 22, insulating barrier 24 and elastic layer 26.
In this specific embodiment, conductor layer 22 can be arranged on the surface 200 of flexible base plate 20, and it comprises many leads.Note that conductor layer 22 can be many leads in actual applications and forms, be not limited to its layer structure, why the conductor layer 22 in this specific embodiment uses " layer " this word, be to explain icon for convenience, and unrestricted conductor layer 22 is a layer structure.In addition, insulating barrier 24 is formed on the conductor layer 22, in order to protection integrated circuit framework and to its insulation.
In this specific embodiment, elastic layer 26 is formed on the insulating barrier 24, and at least one lead in its position corresponding lead layer 22 on insulating barrier 24.In actual applications, but be easier to the position of rupturing in the formation position corresponding lead of elastic layer 26 because of crooked deformation.Therefore, when flexible base plate 20 is subjected to the external force effect and when crooked, the crooked deformation of elastic layer 26 available buffer corresponding lead, thus, elastic layer 26 can increase the folding strength of covering brilliant thin-film packing structure 2, makes corresponding lead be unlikely to rupture because of excessive bending deformation.In addition, elastic layer 26 can be formed on the insulating barrier 24 by screen printing or other suitable technology.
In this specific embodiment, the function face of chip 3 is towards flexible base plate 20, and the function face of chip 3 electrically connects by conductive projection 30 and conductor layer 22, and then flexible base plate 20 can be linked up with chip 3 by conductive projection 30 and conductor layer 22.In addition, in actual applications, but chip 3 and fill insulant 28 around the conductive projection 30 with fixed chip 3 and conductive projection 30, and further provide insulation function.In actual applications, chip 3 can be the chip for driving of LCD, in order to the angle of the liquid crystal molecule rotation that drives panel of LCD.
See also Fig. 3, Fig. 3 shows the schematic diagram according to the brilliant thin-film packing structure 2 of covering of another specific embodiment of the present invention.As shown in Figure 3, this specific embodiment is different with a last specific embodiment is in, the elastic layer that covers brilliant thin-film packing structure 2 26 extensible coverings of this specific embodiment are whole and covers brilliant thin-film packing structure 2.Thus, when flexible base plate 20 is subjected to the external force effect and when crooked, elastic layer 26 available buffers cover the crooked deformation of the each several part of brilliant thin-film packing structure 2, make the each several part that covers brilliant thin-film packing structure 2 be unlikely to rupture because of crooked deformation, thus, elastic layer 26 can increase the folding strength of covering brilliant thin-film packing structure 2.
See also Fig. 4, Fig. 4 has gone out the schematic diagram according to the brilliant thin-film packing structure 2 of covering of another specific embodiment of the present invention.As shown in Figure 4, this specific embodiment is different with above-mentioned specific embodiment be in, the insulating barrier that covers brilliant thin-film packing structure 2 24 of this specific embodiment can have hole 240.In actual applications, the quantity of hole 240 is decided according to user or designer's demand, is not limited to the cited specific embodiment of this specification.In addition, in actual applications, hole 240 optionally runs through insulating barrier 24.
In this specific embodiment, when elastic layer 26 was formed on insulating barrier 24 and the hole 240, elastic layer 26 can be filled into into hole 240.In addition, elastic layer 26 is high conductance (high-termal conductivity or high conductivity) material in this specific embodiment.When elastic layer 26 is packed into hole 240 and during near to or in contact with conductor layer 22, thereby because its high-termal conductivity can help conductor layer 22 heat radiations.Further, in another specific embodiment, the remainder that elastic layer 26 also can cover chip 3 and cover brilliant thin-film packing structure 2 covers the radiating efficiency of brilliant thin-film packing structure 2 with increase.
In actual applications, elastic layer 26 also can have high conductivity, when elastic layer 26 contact wire layers 22 and elastic layer 26 ground connection own, can further strengthen the electrical shielding of covering brilliant thin-film packing structure 2.
Above-mentioned elastic layer 26 with high conductance (high-termal conductivity or high conductivity) can use the function of soft alloy to reach its high conductance simultaneously and to cushion the crooked deformation of conductor layer 22 in actual applications.For example, elastic layer 26 can utilize elargol (silver epoxy) or gold to make.
In sum, of the present inventionly cover the position that brilliant thin-film packing structure can form the lead easy fracture of elastic layer on insulating barrier, when the flexible base plate that covers brilliant thin-film packing structure is stressed and crooked, the crooked deformation of elastic layer available buffer lead is ruptured because of excessive deformation to avoid lead, and then increases the folding strength of covering brilliant thin-film packing structure.In addition, elastic layer also can further strengthen radiating effect and the electrical screen effect of covering brilliant thin-film packing structure if having high conductance.
See also Fig. 5, Fig. 5 shows the flow chart of steps of covering brilliant film encapsulation method according to a specific embodiment of the present invention.This specific embodiment cover brilliant film encapsulation method can finish folding strength higher cover brilliant thin-film packing structure.
As shown in Figure 5, the brilliant film encapsulation method that covers of this specific embodiment comprises the following step: in step S40, and the preparation flexible base plate; In step S42, on the surface of flexible base plate, form conductor layer, wherein, conductor layer comprises many leads; In step S44, on conductor layer, form insulating barrier; And in step S46, the position of corresponding at least one lead forms elastic layer on insulating barrier, covers brilliant thin-film packing structure to finish.
In actual applications, the formed conductor layer of this specific embodiment can be made up of many leads, is not limited to layer structure.Insulating barrier can protect the integrated circuit framework also further to its insulation.In addition, elastic layer can be formed on the insulating barrier by screen printing or other technology that is fit to.On the other hand, in another specific embodiment, cover brilliant film encapsulation method and can further comprise Chip Packaging on the surface of flexible base plate and electrically connect the step of chip and conductor layer.The step of above-mentioned packaged chip in the flexible base plate surface can further comprise the step that electrically connects chip and conductor layer with conductive projection in actual applications, and in chip and the conductive projection step of fill insulant on every side.In addition, chip can be the chip for driving of LCD in actual applications, in order to the angle of the liquid crystal molecule rotation that drives panel of LCD.
In this specific embodiment, but on insulating barrier, form the position that is subject to bending stress in the position corresponding lead layer of elastic layer.When the flexible base plate of finishing when this specific embodiment that covers brilliant thin-film packing structure is stressed and crooked, the crooked deformation of the correspondence position of elastomer available buffer conductor layer, make conductor layer be unlikely to rupture, and then increase the folding strength of covering brilliant thin-film packing structure because of excessive bending deformation.
See also Fig. 6, Fig. 6 shows the flow chart of steps of covering brilliant film encapsulation method according to another specific embodiment of the present invention.As shown in Figure 6, this specific embodiment is different with a last specific embodiment be in, the brilliant film encapsulation method that covers of this specific embodiment further comprises the following step: in step S440, form at least one hole on insulating barrier, wherein, hole optionally runs through insulating barrier; And, in step S460, elastic layer is filled in the hole with near to or in contact with conductor layer.
In actual applications, step S440 and step S44 can finish in same technology (or step), and just, the hole of insulating barrier and insulating barrier is formed on the conductor layer simultaneously.On the other hand, step S460 and step S46 also can finish in same technology (or step), just, form elastomer on insulating barrier and in the hole simultaneously.Each sequence of steps of above-mentioned specific embodiment can be decided according to user or designer's demand, is not limited to the cited specific embodiment of this specification.
In this specific embodiment, elastic layer can be high conductivity material, and therefore, when elastic layer is filled in the hole with near to or in contact with conductor layer the time, its high thermal conduction characteristic can help the conductor layer heat radiation.Further, if the remainder that elastic layer is formed at chip simultaneously and covers brilliant thin-film packing structure also can further increase the radiating efficiency that covers brilliant thin-film packing structure integral body.
In another specific embodiment, elastic layer also can be high conductivity material.When elastic layer was filled in the hole with contact wire layer and the ground connection of elastic layer own, the electrical shielding of covering brilliant thin-film packing structure also can further be reinforced.
In actual applications, above-mentioned elastic layer with high conductance (high conductivity or high-termal conductivity) can use soft alloy to make, to reach the function of its high conductance and the deformation of buffering conductor layer simultaneously.For example, elastic layer can utilize elargol or gold to make.
In sum, of the present invention cover brilliant film encapsulation method can be on insulating barrier the position of the lead of corresponding easy fracture form elastic layer, cover brilliant thin-film packing structure to finish.When flexible base plate was stressed and crooked, the crooked deformation of elastic layer available buffer lead was ruptured because of excessive deformation to avoid lead, and then increases the folding strength of covering brilliant thin-film packing structure.In addition, elastic layer also can further strengthen radiating effect and the electrical screen effect of covering brilliant thin-film packing structure if having high conductance.
Than prior art, of the present inventionly cover brilliant thin-film packing structure and cover the deformation that brilliant film encapsulation method can cushion the stressed generation of lead by elastic layer, and then increase the folding strength of covering brilliant thin-film packing structure integral body, make it not cause wire fracture even influence its yield because of crooked.In addition, if elastic layer has high conductance, can further strengthen radiating efficiency and the electrical screen effect of covering brilliant thin-film packing structure.
By the detailed description of above preferred specific embodiment, hope can be known description feature of the present invention and spirit more, and is not to come scope of the present invention is limited with above-mentioned disclosed preferred specific embodiment.On the contrary, its objective is that hope can and be equal to alternative being covered by in the scope of claim of the present invention with various changes.Therefore, the scope of claim of the present invention should be done the broadest explanation according to above-mentioned explanation, contains all possible change and is equal to alternative to cause it.
The primary clustering symbol description
1: cover brilliant thin-film packing structure 10: substrate
12: conductor layer 14: insulating barrier
16: chip 18: metal coupling
19: insulating materials 2: cover brilliant thin-film packing structure
20: flexible base plate 22: conductor layer
24: insulating barrier 26: elastic layer
28: insulating material 200: surface
240: hole 3: chip
30: conductive projection S40～S46: process step
S440, S460: process step.
Claims (10)
1. one kind covers brilliant thin-film packing structure, comprises:
Flexible base plate has a surface;
Conductor layer is formed on the described surface, and described conductor layer comprises many leads;
Insulating barrier is formed on the described conductor layer; And
Elastic layer is formed on the described insulating barrier and at least one lead in corresponding these leads;
Wherein, be subjected to external force and when crooked, described elastic layer can cushion the deformation of described corresponding lead when described flexible base plate.
2. according to claim 1ly cover brilliant thin-film packing structure, further comprise: chip is arranged on the described surface and electrically connects described conductor layer.
3. according to claim 2ly cover brilliant thin-film packing structure, wherein, described elastic layer extends and covers described chip.
4. according to claim 2ly cover brilliant thin-film packing structure, wherein, described chip electrically connects described conductor layer by conductive projection.
5. according to claim 2ly cover brilliant thin-film packing structure, wherein, described chip is a LCD device drive chip.
6. according to claim 1ly cover brilliant thin-film packing structure, wherein, described elastic layer is formed on the described insulating barrier by stencil printing.
7. according to claim 1ly cover brilliant thin-film packing structure, wherein, described elastic layer is made by the high conductance material.
8. according to claim 7ly cover brilliant thin-film packing structure, wherein, have at least one hole on the described insulating barrier, and described high conductance material is filled in described at least one hole with near to or in contact with described conductor layer.
9. according to claim 7ly cover brilliant thin-film packing structure, wherein, described high conductance material is an elargol.
10. one kind covers brilliant film encapsulation method, comprises the following step:
The preparation flexible base plate, it has a surface;
Form conductor layer on described surface, it comprises many leads;
On described conductor layer, form insulating barrier; And
On described insulating barrier, form elastic layer, and at least one lead in corresponding these leads of described elastic layer, cover brilliant thin-film packing structure to finish;
Wherein, be subjected to external force and when crooked, described elastic layer can cushion the deformation of described corresponding lead when described flexible base plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101330516A CN101626010B (en) | 2008-07-08 | 2008-07-08 | chip on film packaging structure and chip on film packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101330516A CN101626010B (en) | 2008-07-08 | 2008-07-08 | chip on film packaging structure and chip on film packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101626010A true CN101626010A (en) | 2010-01-13 |
| CN101626010B CN101626010B (en) | 2012-02-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101330516A Expired - Fee Related CN101626010B (en) | 2008-07-08 | 2008-07-08 | chip on film packaging structure and chip on film packaging method |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103839898A (en) * | 2012-11-20 | 2014-06-04 | 瑞鼎科技股份有限公司 | Package structure and method for manufacturing the same |
| CN104409366A (en) * | 2014-11-19 | 2015-03-11 | 三星半导体(中国)研究开发有限公司 | Chip encapsulating method and encapsulating substrate |
| CN105826353A (en) * | 2016-03-25 | 2016-08-03 | 京东方科技集团股份有限公司 | Chip on film and display device |
| CN105845637A (en) * | 2014-11-07 | 2016-08-10 | 瑞鼎科技股份有限公司 | Double-sided flip-chip thin film packaging structure and manufacturing method thereof |
| CN106169449A (en) * | 2015-05-22 | 2016-11-30 | 南茂科技股份有限公司 | Thin film flip chip package and heat dissipation method thereof |
| CN106842733A (en) * | 2017-02-13 | 2017-06-13 | 深圳市华星光电技术有限公司 | Display panel and its array base palte |
| CN107580406A (en) * | 2012-07-12 | 2018-01-12 | 环球展览公司 | To provide the component of the electrical connection of non-boundary flexible display and associated method |
| CN108684134A (en) * | 2018-05-10 | 2018-10-19 | 京东方科技集团股份有限公司 | Wiring board and display device |
| CN109558029A (en) * | 2017-09-27 | 2019-04-02 | 乐金显示有限公司 | With the display device for touching structure and the method for manufacturing the display device |
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-
2008
- 2008-07-08 CN CN2008101330516A patent/CN101626010B/en not_active Expired - Fee Related
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| CN109558029A (en) * | 2017-09-27 | 2019-04-02 | 乐金显示有限公司 | With the display device for touching structure and the method for manufacturing the display device |
| CN110323184A (en) * | 2018-03-28 | 2019-10-11 | 南茂科技股份有限公司 | Package structure membrane of flip chip package |
| CN110323184B (en) * | 2018-03-28 | 2021-05-18 | 南茂科技股份有限公司 | Thin film flip chip packaging structure |
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