CN201194226Y - Highly reliable diode device applying lead wire pre-welding construction - Google Patents
Highly reliable diode device applying lead wire pre-welding construction Download PDFInfo
- Publication number
- CN201194226Y CN201194226Y CNU2008200349027U CN200820034902U CN201194226Y CN 201194226 Y CN201194226 Y CN 201194226Y CN U2008200349027 U CNU2008200349027 U CN U2008200349027U CN 200820034902 U CN200820034902 U CN 200820034902U CN 201194226 Y CN201194226 Y CN 201194226Y
- Authority
- CN
- China
- Prior art keywords
- welding
- diode
- solder
- lead
- packet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A diode device with high reliability adopting a lead wire pre-welding structure is characterized in that, in an axial epoxy packaging body of the diode, a diode grain is used as a center; pre-welding lead wires are symmetrically arranged on two extremities of the grains, wherein the pre-welding lead wires are composed of a lead wire, a nail head and a solder packet; the nail head is arranged near one end of the grain, and integrated with the lead wires; a head part of the nail head is provided with a table-board, and the solder packet is fixed on the table-board; two pre-welding wires are respectively welded with welding areas on the two extremities of the grains through the solder packet on the nail head. Due to the solder packet prewelded on the table-board of the nail head, contraposition accuracy of the solder packet and the grain welding area are ensured in the next welding packet, thereby solving the problems of the damage of the grain oxidation protective film and tin-hung and tin-overflow and the like caused by welding deflection, increasing rate of good product of the diode and ensuring reliability of the diode.
Description
Technical field
The utility model relates to axialmode encapsulated semiconductor diode, particularly a kind of high reliability diode component that adopts the pre-welding structure of lead-in wire.This diode component has been owing to adopted the structural design of lead-in wire prewelding, thereby improved the reliability of diode and the yields of encapsulation.
Background technology
The axialmode encapsulation is a kind of typical package form at semiconductor diode crystal grain.Its encapsulating structure is the center with a crystal grain that contains PN junction; in the two end axles of this crystal grain to respectively by sheet weld tabs and lead-in wire head welding (seeing shown in Figure 3), with epoxy resin the lead-in wire head integral body at crystal grain and two ends thereof is wrapped up the realization packaging protection then.At present, adopt a welding encapsulation technology mostly for axialmode encapsulated semiconductor diode production producer, specific practice is: the first step is seated in a crystal grain, two weld tabs and two lead-in wires on the graphite boat by axial assembly structure requirement and (generally adopts the graphite boat of 1200 holes/boat); In second step, integral body is put into the high temperature furnace heating and once is welded into integral body (heating-up temperature generally is not higher than 360 degree) after will loading; In the 3rd step, annotate the epoxy encapsulation moulding.
Following problem appears in the above-mentioned welding procedure easily: 1) owing to the area of weld tabs area greater than the crystal grain weld zone, part scolding tin can cover the protective oxide layer at edge, crystal grain weld zone when scolding tin melted, though final most of scolding tin can be contracted in the weld zone of crystal grain, but always there is the scolding tin of trace to remain on the protective oxide layer, protective oxide layer to crystal grain plays destruction, causes the reliability decrease of diode; 2) because there is radial clearance in the filling hole on weld tabs and the graphite boat, and off normal appears in the relative crystal grain of weld tabs weld zone easily, tining, excessive tin when causing welding, cause electrically bad, even problem such as short circuit inefficacy.Therefore, how to solve these problems that exist in the prior art, just become the problem of the utility model research.
Summary of the invention
The utility model provides a kind of high reliability diode component that adopts the pre-welding structure of lead-in wire; its objective is and to solve in the axialmode encapsulation diode welding encapsulation; by problems such as the welding damage grain oxidation diaphragm that causes of off normal and tining, the tin that overflows; to improve the yields of diode, guarantee the reliability of diode.
For achieving the above object, the technical solution adopted in the utility model is: a kind of high reliability diode component that adopts the pre-welding structure of lead-in wire, in the axialmode epoxy packages body of diode, be the center with the diode crystal particle, extremely axially be arranged with a pre-solder taul at two of this crystal grain; This pre-solder taul is made up of lead-in wire, ailhead and scolding tin bag three parts, and wherein, ailhead is positioned at lead-in wire near an end of crystal grain, and with the lead-in wire structure that is formed in one, the head of ailhead has a table top, scolding tin bag prewelding is fixed on this table top; Two pre-solder tauls are respectively through two weld zone welding on extreme of scolding tin bag on the ailhead separately and crystal grain.
Related content in the technique scheme is explained as follows:
1, in the such scheme, described " diode crystal particle " comprises various situations such as PN junction type diode crystal particle, the special based diode crystal grain of metal barrier heterojunction type nitre.Described " two is extreme " is meant the positive ends and the negative polarity end of diode.Be welded with the structure of scolding tin bag on the table top that described " pre-solder taul " is the index wire ailhead in advance, the shape of this scolding tin bag is similar to " yurt " shape.
2, in the such scheme, described pre-solder taul divides by its profile generally following four kinds:
(1) " T " font structure is seen shown in Figure 4;
(2) " do " the font structure, see shown in Figure 5;
(3) " list bullet " shape structure is seen shown in Figure 6;
(4) " Shuangzi bullet " shape structure is seen shown in Figure 7.
Because pre-solder taul of the present utility model is welded with the scolding tin bag in advance on the ailhead table top; in ensuing welding encapsulation, can guarantee the contraposition accuracy of scolding tin bag and crystal grain weld zone; therefore problems such as damage grain oxidation diaphragm and the tining that causes by the welding off normal, the tin that overflows have been solved; thereby improved the yields of diode, guaranteed the reliability of diode.
The utility model contrasts as follows with existing electrical yield and reliability of once welding encapsulating products after tested:
The former electrical yield of the electrical yield the utility model of welding product product of crystal grain lot number
Description of drawings
Accompanying drawing 1 is the utility model example structure cutaway view;
Accompanying drawing 2 is a crystal grain and pre-solder taul exploded view among the utility model embodiment;
Accompanying drawing 3 once welds diode crystal particle, weld tabs, the lead-in wire exploded view of encapsulation for existing axialmode;
Accompanying drawing 5 is that the utility model " is done " font prewelding pin configuration schematic diagram;
Accompanying drawing 6 is the utility model " list bullet " shape prewelding pin configuration schematic diagram;
Accompanying drawing 7 is the utility model " Shuangzi bullet " shape prewelding pin configuration schematic diagram.
In the above accompanying drawing: 1, epoxy packages body; 2, lead-in wire; 3, ailhead; 4, scolding tin bag; 5, crystal grain; 6, weld tabs.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described:
Embodiment: a kind of high reliability diode component that adopts the pre-welding structure of lead-in wire,
As depicted in figs. 1 and 2, in the axialmode epoxy packages body 1 of diode, be the center with a crystal grain 5 that contains PN junction, extremely axially be arranged with a pre-solder taul at two of this crystal grain 5.This pre-solder taul is made up of lead-in wire 2, ailhead 3 and scolding tin bag 4 three parts, and wherein, ailhead 3 is positioned at the ends of lead-in wire 2 near crystal grain 5, and with 2 structures that are formed in one that go between; The head of ailhead 3 has a table top, and scolding tin bag 4 preweldings are fixed on this table top.Two pre-solder tauls through two weld zone welding on extreme of the scolding tin bag 4 on the ailhead 3 separately and crystal grain 5, constitute a kind of semiconductor diode structure of axialmode encapsulation with this respectively.
The prewelding lead format that adopts in the present embodiment is " list bullet " shape structure, sees shown in Figure 6.In the product encapsulation; to form the scolding tin bag at the table top of the lead-in wire ailhead weld tabs of burn-oning earlier; again with the welding of pre-solder taul isomorphous grain, thereby scolding tin can mobile off normal when guaranteeing next step with the crystal grain welding, has avoided scolding tin to pollute problems such as grain oxidation diaphragm and tining, excessive tin.
Present embodiment can be applied to the SKY (the special based diode of nitre) and the plane wafer type GPP product of axialmode encapsulating structure.
Fig. 4, Fig. 5 and Fig. 7 are respectively the pre-solder taul of " T " font, the pre-solder taul of " doing " font and the pre-solder taul of " Shuangzi bullet " shape.These pre-solder tauls can be used for being equal to the pre-solder taul of replacing in the present embodiment of " list bullet " shape, thereby constitute new embodiment.
The foregoing description only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of being done according to the utility model spirit change or modify, and all should be encompassed within the protection range of the present utility model.
Claims (5)
1. a high reliability diode component that adopts the pre-welding structure of lead-in wire is characterized in that: in the axialmode epoxy packages body (1) of diode, be the center with a diode crystal particle (5), extremely axially be arranged with a pre-solder taul at two of this crystal grain (5); This pre-solder taul is made up of lead-in wire (2), ailhead (3) and scolding tin bag (4) three parts, wherein, ailhead (3) is positioned at lead-in wire (2) near an end of crystal grain (5), and with lead-in wire (2) structure that is formed in one, the head of ailhead (3) has a table top, and scolding tin bag (4) prewelding is fixed on this table top; Two pre-solder tauls are respectively through two weld zone welding on extreme of the scolding tin bag (4) on the ailhead (3) separately and crystal grain (5).
2. high reliability diode component according to claim 1 is characterized in that: described pre-solder taul be shaped as " T " font structure.
3. high reliability diode component according to claim 1 is characterized in that: described pre-solder taul be shaped as " doing " font structure.
4. high reliability diode component according to claim 1 is characterized in that: described pre-solder taul be shaped as " list bullet " shape structure.
5. high reliability diode component according to claim 1 is characterized in that: described pre-solder taul be shaped as " Shuangzi bullet " shape structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200349027U CN201194226Y (en) | 2008-04-03 | 2008-04-03 | Highly reliable diode device applying lead wire pre-welding construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200349027U CN201194226Y (en) | 2008-04-03 | 2008-04-03 | Highly reliable diode device applying lead wire pre-welding construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201194226Y true CN201194226Y (en) | 2009-02-11 |
Family
ID=40393758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200349027U Expired - Fee Related CN201194226Y (en) | 2008-04-03 | 2008-04-03 | Highly reliable diode device applying lead wire pre-welding construction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201194226Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034705A (en) * | 2010-10-18 | 2011-04-27 | 重庆平伟实业股份有限公司 | Processing technology for reducing large-current diode stress |
| CN102740611A (en) * | 2012-07-07 | 2012-10-17 | 上海鼎虹电子有限公司 | Bracket for welding electronic element |
| CN110190001A (en) * | 2019-06-05 | 2019-08-30 | 扬州扬杰电子科技股份有限公司 | A kind of processing technology of axial diode |
| CN110854080A (en) * | 2019-11-26 | 2020-02-28 | 合肥圣达电子科技实业有限公司 | Multi-lead ceramic component packaging shell and processing method thereof |
-
2008
- 2008-04-03 CN CNU2008200349027U patent/CN201194226Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034705A (en) * | 2010-10-18 | 2011-04-27 | 重庆平伟实业股份有限公司 | Processing technology for reducing large-current diode stress |
| CN102034705B (en) * | 2010-10-18 | 2012-12-12 | 重庆平伟实业股份有限公司 | Processing technology for reducing large-current diode stress |
| CN102740611A (en) * | 2012-07-07 | 2012-10-17 | 上海鼎虹电子有限公司 | Bracket for welding electronic element |
| CN110190001A (en) * | 2019-06-05 | 2019-08-30 | 扬州扬杰电子科技股份有限公司 | A kind of processing technology of axial diode |
| CN110854080A (en) * | 2019-11-26 | 2020-02-28 | 合肥圣达电子科技实业有限公司 | Multi-lead ceramic component packaging shell and processing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105826458B (en) | A kind of DPC ceramic substrate preparation methods with metal box dam | |
| CN201194226Y (en) | Highly reliable diode device applying lead wire pre-welding construction | |
| US9589873B2 (en) | Leadless chip carrier | |
| CN108461459A (en) | A kind of cathode docking biphase rectification diode and its manufacturing process | |
| CN203536467U (en) | LED device having transition substrate | |
| CN208796987U (en) | A kind of lead frame and its ultrathin small shape flip-chip packaged part | |
| CN202240181U (en) | Three-layer metal composite soldering tag | |
| CN106783762A (en) | The diode encapsulating structure and manufacture method of a kind of vertical parallel way of dual chip | |
| CN104518066B (en) | A kind of LED component and its method for packing with transition substrate | |
| CN201156541Y (en) | Novel lead wire of electrode of semiconductor diode | |
| CN204497239U (en) | Metallic packaging big current, high voltage, fast recovery diode | |
| CN214588813U (en) | Packaging structure of reverse-bending internal insulation product | |
| CN216872012U (en) | Non-magnetic ceramic packaging body | |
| CN110323198B (en) | Non-contact type upper and lower chip packaging structure and packaging method thereof | |
| CN206505909U (en) | A kind of diode encapsulating structure of the vertical parallel way of dual chip | |
| CN201112375Y (en) | Semiconductor device seal packaging metal foundation | |
| CN112908962B (en) | Vehicle-mounted diode packaging structure and method | |
| CN210245488U (en) | Non-contact type upper and lower chip packaging structure | |
| CN208835051U (en) | Low-stress semiconductor chip fixing structure and semiconductor device | |
| CN207265046U (en) | A kind of DIP encapsulating structures with embedded PIN needle | |
| CN209785910U (en) | Large-current semiconductor power device | |
| CN203312622U (en) | TO pedestal | |
| CN201812815U (en) | Rectifier for preventing crystal grains from drifting | |
| CN202259312U (en) | Electronic diode | |
| CN201758121U (en) | Low bump chip size packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20170403 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |